JPH10335271A - Wafer pasting sheet and manufacture of semiconductor device - Google Patents
Wafer pasting sheet and manufacture of semiconductor deviceInfo
- Publication number
- JPH10335271A JPH10335271A JP9144240A JP14424097A JPH10335271A JP H10335271 A JPH10335271 A JP H10335271A JP 9144240 A JP9144240 A JP 9144240A JP 14424097 A JP14424097 A JP 14424097A JP H10335271 A JPH10335271 A JP H10335271A
- Authority
- JP
- Japan
- Prior art keywords
- radiation
- adhesive layer
- polyimide
- sensitive adhesive
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/27—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01004—Beryllium [Be]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/06—Polymers
- H01L2924/078—Adhesive characteristics other than chemical
- H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Adhesive Tapes (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Dicing (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
【０００１】[0001]
【発明の技術分野】本発明は、半導体ウェハ、例えばシ
リコンウェハの上に形成された複数の半導体集積回路を
回路毎にダイシングし、個々の半導体集積回路、即ちＩ
Ｃチップ（チップまたはダイとも言う）とする工程にお
いて使用されるウェハ貼着用シート、およびこのような
工程を含む半導体装置の製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to dicing a plurality of semiconductor integrated circuits formed on a semiconductor wafer, for example, a silicon wafer, into individual semiconductor integrated circuits.
The present invention relates to a wafer sticking sheet used in a step of forming a C chip (also referred to as a chip or a die), and a method of manufacturing a semiconductor device including such a step.
【０００２】[0002]
【発明の技術的背景】近年、半導体装置において、メモ
リーの高集積化に伴い、ＬＯＣ（lead on chip）やＣＯ
Ｌ（chip on lead）構造の半導体装置が提案されている
（たとえば、NIKKEI MICRODEVICES １９９１年２月号
８９〜９７頁あるいは特開平２−２４６１２５号公報参
照）。2. Description of the Related Art In recent years, in semiconductor devices, LOC (lead on chip) and CO
Semiconductor devices having an L (chip on lead) structure have been proposed (for example, NIKKEI MICRODEVICES, February 1991).
See pages 89-97 or JP-A-2-246125).
【０００３】ＬＯＣやＣＯＬ構造には、種々の利点があ
るが、従来のパッケージと全く違う構造であるため、さ
まざまな課題を克服する必要がある。解決されるべき課
題として、チップと封止樹脂との界面の剥離や、パッケ
ージクラックの発生等による信頼性の低下があげられ
る。[0003] The LOC and COL structures have various advantages, but since they are completely different from conventional packages, it is necessary to overcome various problems. Problems to be solved include separation of the interface between the chip and the sealing resin, and reduction in reliability due to occurrence of package cracks.
【０００４】このようなパッケージクラックの発生を防
止するために、ウェハの裏面に予めポリイミド系樹脂層
を設けておき、これをダイシングして得られる、裏面に
ポリイミド系樹脂層を有するＩＣチップを用いることが
提案されている。パッケージクラックの発生防止のメカ
ニズムは必ずしも明らかではないが、ポリイミド系樹脂
層を介することにより、ＩＣチップと封止樹脂との密着
性が向上するため、パッケージクラックの発生が防止さ
れるものと考えられている。In order to prevent the occurrence of such package cracks, a polyimide resin layer is previously provided on the back surface of the wafer, and an IC chip having a polyimide resin layer on the back surface obtained by dicing the polyimide resin layer is used. It has been proposed. Although the mechanism for preventing the occurrence of package cracks is not always clear, it is thought that the occurrence of package cracks is prevented because the adhesiveness between the IC chip and the sealing resin is improved through the polyimide resin layer. ing.
【０００５】従来、ポリイミド系樹脂層をウェハ裏面に
設けるためには、ポリイミド系樹脂を直接スピンコート
あるいはスクリーン印刷することにより行われていた。
しかしながら、この方法では原材料のロスが大きく、ま
たウェハにダメージを与える虞もある。さらに、ポリイ
ミド系樹脂層とＩＣチップとの密着性が必ずしも充分で
ないため、界面剥離を起こし、パッケージクラックの発
生原因となることもあった。また、この方法では、ポリ
イミド系樹脂層を均一な厚さで形成することが困難であ
った。Conventionally, a polyimide resin layer is provided on the back surface of a wafer by directly spin-coating or screen-printing the polyimide resin.
However, this method causes a large loss of raw materials, and may damage the wafer. Furthermore, since the adhesion between the polyimide resin layer and the IC chip is not always sufficient, interface peeling may occur, which may cause package cracking. Also, with this method, it was difficult to form the polyimide resin layer with a uniform thickness.
【０００６】[0006]
【発明の目的】本発明は、上記のような従来技術に鑑み
てなされたものであって、パッケージクラック等の発生
を防止し、信頼性を向上することができる半導体装置の
製造方法ならびに該製法に好適に用いられるウェハ貼着
用シートを提供することを目的としている。SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned prior art, and a method of manufacturing a semiconductor device capable of preventing the occurrence of package cracks and improving reliability and a method of manufacturing the same. It is an object of the present invention to provide a wafer sticking sheet which is suitably used for a wafer.
【０００７】[0007]
【発明の概要】本発明に係るウェハ貼着用シートは、基
材フィルムと、前記基材フィルム上に形成された放射線
硬化型粘着剤層と、該放射線硬化型粘着剤層上に形成さ
れたポリイミド系接着剤層とから構成されることを特徴
としている。SUMMARY OF THE INVENTION A wafer sticking sheet according to the present invention comprises a base film, a radiation-curable pressure-sensitive adhesive layer formed on the base film, and a polyimide formed on the radiation-curable pressure-sensitive adhesive layer. And a system adhesive layer.
【０００８】本発明に係る第１の半導体装置の製造方法
は、基材フィルムと、前記基材フィルム上に形成された
放射線硬化型粘着剤層と、該放射線硬化型粘着剤層上に
形成されたポリイミド系接着剤層とから構成されるウェ
ハ貼着用シートのポリイミド系接着剤層に、半導体ウェ
ハを熱圧着し、前記半導体ウェハをダイシングしてＩＣ
チップとし、前記放射線硬化型粘着剤層に放射線を照射
して放射線硬化型粘着剤層を硬化させ、前記ＩＣチップ
裏面に前記ポリイミド系接着剤層を固着残存させて放射
線硬化型粘着剤層から剥離する工程を含むことを特徴と
している。According to a first method of manufacturing a semiconductor device according to the present invention, a substrate film, a radiation-curable pressure-sensitive adhesive layer formed on the substrate film, and a radiation-curable pressure-sensitive adhesive layer formed on the radiation-curable pressure-sensitive adhesive layer The semiconductor wafer is thermocompression-bonded to the polyimide adhesive layer of the wafer bonding sheet composed of
A chip, the radiation-curable pressure-sensitive adhesive layer is irradiated with radiation to cure the radiation-curable pressure-sensitive adhesive layer, and the polyimide-based adhesive layer is fixed and left on the backside of the IC chip, and peeled off from the radiation-curable pressure-sensitive adhesive layer. It is characterized by including the step of performing.
【０００９】本発明に係る第２の半導体装置の製造方法
は、ポリイミド用工程フィルムと、前記ポリイミド用工
程フィルム上に形成されたポリイミド系接着剤層とから
なるポリイミド接着シートの前記ポリイミド系接着剤層
に、半導体ウェハを熱圧着した後、該ポリイミド用工程
フィルムを剥離し、基材フィルムと、前記基材フィルム
上に形成された放射線硬化型粘着剤層とからなる粘着シ
ートの前記放射線硬化型粘着剤層を、前記ポリイミド系
接着剤層が熱圧着された半導体ウェハのポリイミド系接
着剤層面に貼着し、前記半導体ウェハをダイシングして
ＩＣチップとし、前記放射線硬化型粘着剤層に放射線を
照射して放射線硬化型粘着剤層を硬化させ、前記ＩＣチ
ップ裏面に前記ポリイミド系接着剤層を固着残存させて
放射線硬化型粘着剤層から剥離する工程を含むことを特
徴としている。In a second method of manufacturing a semiconductor device according to the present invention, there is provided a method for manufacturing a semiconductor device, comprising: the step of forming a polyimide film; and the step of forming a polyimide adhesive sheet comprising a polyimide adhesive layer formed on the polyimide process film. After the semiconductor wafer is thermocompression-bonded to the layer, the process film for polyimide is peeled off, and the radiation-curable pressure-sensitive adhesive sheet comprising a base film and a radiation-curable pressure-sensitive adhesive layer formed on the base film is formed. The pressure-sensitive adhesive layer is adhered to the surface of the polyimide-based adhesive layer of the semiconductor wafer on which the polyimide-based adhesive layer is thermocompressed, and the semiconductor wafer is diced into an IC chip, and the radiation-curable pressure-sensitive adhesive layer is irradiated with radiation. Irradiation cures the radiation-curable pressure-sensitive adhesive layer, leaving the polyimide-based adhesive layer fixed on the backside of the IC chip to leave radiation-curable pressure-sensitive adhesive It is characterized by comprising the step of removing from the layer.
【００１０】本発明において、前記放射線硬化型粘着剤
層の放射線照射後における弾性率は１×１０9 dyn/cm2
以上であることが好ましい。また、前記放射線硬化型粘
着剤層が、ウェハダイシング用のリングフレームに支持
可能な面積を有し、かつ、前記ポリイミド系接着剤層の
外径が、ウェハダイシング用のリングフレームの内径よ
りも小さいことが好ましい。In the present invention, the radiation-curable pressure-sensitive adhesive layer has an elastic modulus of 1 × 10 9 dyn / cm 2 after irradiation.
It is preferable that it is above. Further, the radiation-curable pressure-sensitive adhesive layer has an area that can be supported by a ring frame for wafer dicing, and the outer diameter of the polyimide-based adhesive layer is smaller than the inner diameter of the ring frame for wafer dicing. Is preferred.
【００１１】[0011]
【発明の具体的説明】以下、本発明に係るウェハ貼着用
シートおよび半導体装置の製造方法について、具体的に
説明する。DETAILED DESCRIPTION OF THE INVENTION Hereinafter, a method for manufacturing a wafer sticking sheet and a semiconductor device according to the present invention will be specifically described.
【００１２】本発明に係るウェハ貼着用シート１０は、
図１に示すように、基材フィルム１と、その上に形成さ
れた放射線硬化型粘着剤層２と、前記放射線硬化型粘着
剤層２上に形成されたポリイミド系接着剤層４からな
る。なお、本発明のウェハ貼着用シート１０の使用前
に、放射線硬化型粘着剤層２およびポリイミド系接着剤
層４を保護するために、シート１０の上面に離型フィル
ムを積層しておいてもよい。The wafer sticking sheet 10 according to the present invention comprises:
As shown in FIG. 1, a substrate film 1, a radiation-curable pressure-sensitive adhesive layer 2 formed thereon, and a polyimide-based adhesive layer 4 formed on the radiation-curable pressure-sensitive adhesive layer 2. In addition, before using the wafer bonding sheet 10 of the present invention, a release film may be laminated on the upper surface of the sheet 10 in order to protect the radiation-curable pressure-sensitive adhesive layer 2 and the polyimide-based adhesive layer 4. Good.
【００１３】本発明に係るウェハ貼着用シートの形状
は、テープ状、ラベル状などあらゆる形状をとりうる。
基材フィルム１としては、耐水性および耐熱性に優れて
いるものが適し、特に合成樹脂フィルムが適する。本発
明のウェハ貼着用シートでは、後記するように、その使
用に当り、電子線（ＥＢ）や紫外線（ＵＶ）などの放射
線照射が行われているので、ＥＢ照射の場合は、該基材
フィルム１は透明である必要はないが、ＵＶ照射をして
用いる場合は、有色であってもＵＶを透過する材料であ
る必要がある。The shape of the sheet for attaching a wafer according to the present invention can be any shape such as a tape shape and a label shape.
As the base film 1, a film excellent in water resistance and heat resistance is suitable, and in particular, a synthetic resin film is suitable. In the wafer sticking sheet of the present invention, as described later, radiation such as electron beam (EB) or ultraviolet (UV) is performed upon use thereof, and in the case of EB irradiation, the base film is used. 1 does not need to be transparent, but when used by UV irradiation, it needs to be a material that transmits UV even if it is colored.
【００１４】このような基材フィルム１としては、具体
的には、ポリエチレンフィルム、ポリプロピレンフィル
ム、ポリ塩化ビニルフィルム、ポリエチレンテレフタレ
ートフィルム、ポリブチレンテレフタレートフィルム、
ポリブテンフィルム、ポリブタジエンフィルム、ポリウ
レタンフィルム、ポリメチルペンテンフィルム、エチレ
ン−酢酸ビニル共重合体フィルム、エチレン−（メタ）
アクリル酸共重合体フィルム、エチレン−（メタ）アク
リル酸メチル共重合体フィルム、エチレン−（メタ）ア
クリル酸エチル共重合体フィルム等が用いられる。また
これらの積層フィルムであってもよい。基材フィルム１
の膜厚は、通常は１０〜３００μｍ程度であり、好まし
くは５０〜２００μｍ程度である。As such a substrate film 1, specifically, a polyethylene film, a polypropylene film, a polyvinyl chloride film, a polyethylene terephthalate film, a polybutylene terephthalate film,
Polybutene film, polybutadiene film, polyurethane film, polymethylpentene film, ethylene-vinyl acetate copolymer film, ethylene- (meth)
Acrylic acid copolymer films, ethylene-methyl (meth) acrylate copolymer films, ethylene-ethyl (meth) acrylate copolymer films and the like are used. Also, these laminated films may be used. Base film 1
Is usually about 10 to 300 μm, preferably about 50 to 200 μm.
【００１５】ウェハのダイシング後にエキスパンド処理
をする必要がある場合には、従来と同様のポリ塩化ビニ
ル、ポリエチレン等の長さ方向および幅方向に延伸性を
有する合成樹脂フィルムを基材として用いることが好ま
しい。If it is necessary to carry out an expanding treatment after dicing the wafer, a synthetic resin film having stretchability in the length and width directions, such as polyvinyl chloride or polyethylene, which is the same as the conventional one, may be used as the base material. preferable.
【００１６】基材フィルム１上に形成されている放射線
硬化型粘着剤層２は、たとえば粘着剤と放射線重合性化
合物からなる。粘着剤としては、アクリル系、ポリエス
テル系、天然ゴム系等従来公知の粘着剤が特に制限され
ることなく用いられる。これらの内でも、アクリル系粘
着剤が好ましく、特にアクリル酸エステルを主たる構成
単位とするアクリル系粘着剤が好ましい。The radiation-curable pressure-sensitive adhesive layer 2 formed on the base film 1 comprises, for example, a pressure-sensitive adhesive and a radiation-polymerizable compound. As the pressure-sensitive adhesive, conventionally known pressure-sensitive adhesives such as acrylic, polyester, and natural rubber can be used without any particular limitation. Among these, acrylic pressure-sensitive adhesives are preferable, and acrylic pressure-sensitive adhesives containing acrylate as a main constituent unit are particularly preferable.
【００１７】アクリル酸エステルとしては、たとえば、
炭素数１〜１０のアルキルアルコールのアクリル酸エス
テル、炭素数１〜１０のアルキルアルコールのメタクリ
ル酸エステル等が用いられる。As the acrylate, for example,
Acrylic acid esters of alkyl alcohols having 1 to 10 carbon atoms, methacrylic acid esters of alkyl alcohols having 1 to 10 carbon atoms and the like are used.
【００１８】また、この他にも、本発明の目的を損なわ
ない範囲で、水酸基、アミノ基、置換アミノ基、グリシ
ジル基等を含有するアクリル酸エステル；および（メ
タ）アクリル酸、酢酸ビニル、アクリロニトリル、ビニ
ルアルキルエーテル等から導かれる構成単位が、アクリ
ル系粘着剤中に含有されていてもよい。Other than these, acrylic esters containing a hydroxyl group, an amino group, a substituted amino group, a glycidyl group, and the like; and (meth) acrylic acid, vinyl acetate, acrylonitrile, so long as the object of the present invention is not impaired. And a structural unit derived from vinyl alkyl ether or the like may be contained in the acrylic pressure-sensitive adhesive.
【００１９】これらのモノマーを重合して得られる共重
合体の分子量は、１．０×１０5 〜１０．０×１０5 で
あり、好ましくは４．０×１０5 〜８．０×１０5 であ
る。上記のようなアクリル系粘着剤は、架橋剤を使用す
ることにより接着力と凝集力とを任意の値に設定するこ
とができる。このような架橋剤としては、多価イソシア
ネート化合物、多価エポキシ化合物、多価アジリジン化
合物、キレート化合物等がある。The molecular weight of the copolymer obtained by polymerizing these monomers is from 1.0 × 10 5 to 10.0 × 10 5 , preferably from 4.0 × 10 5 to 8.0 × 10 5. It is. The acrylic pressure-sensitive adhesive as described above can set the adhesive force and the cohesive force to arbitrary values by using a crosslinking agent. Examples of such a crosslinking agent include a polyvalent isocyanate compound, a polyvalent epoxy compound, a polyvalent aziridine compound, a chelate compound and the like.
【００２０】また放射線硬化型粘着剤層２に用いられる
放射線重合性化合物としては、たとえば特開昭６０−１
９６，９５６号公報および特開昭６０−２２３，１３９
号公報に開示されているような光照射によって三次元網
状化しうる分子内に光重合性炭素−炭素二重結合を少な
くとも２個以上有する低分子量化合物が広く用いられ、
具体的には、トリメチロールプロパントリアクリレー
ト、テトラメチロールメタンテトラアクリレート、ペン
タエリスリトールトリアクリレート、ペンタエリスリト
ールテトラアクリレート、ジペンタエリスリトールモノ
ヒドロキシペンタアクリレート、ジペンタエリスリトー
ルヘキサアクリレートあるいは１，４−ブチレングリコ
ールジアクリレート、１，６−ヘキサンジオールジアク
リレート、ポリエチレングリコールジアクリレート、市
販のオリゴエステルアクリレートなどが用いられる。The radiation-polymerizable compound used in the radiation-curable pressure-sensitive adhesive layer 2 includes, for example, JP-A-60-1
No. 96,956 and JP-A-60-223,139.
Low molecular weight compounds having at least two or more photopolymerizable carbon-carbon double bonds in a molecule that can be three-dimensionally reticulated by light irradiation as disclosed in Japanese Patent Application
Specifically, trimethylol propane triacrylate, tetramethylol methane tetraacrylate, pentaerythritol triacrylate, pentaerythritol tetraacrylate, dipentaerythritol monohydroxypentaacrylate, dipentaerythritol hexaacrylate or 1,4-butylene glycol diacrylate, 1,6-hexanediol diacrylate, polyethylene glycol diacrylate, commercially available oligoester acrylate and the like are used.
【００２１】さらに放射線重合性化合物として、上記の
ようなアクリレート系化合物のほかに、ウレタンアクリ
レート系オリゴマーを用いることもできる。ウレタンア
クリレート系オリゴマーは、ポリエステル型またはポリ
エーテル型などのポリオール化合物と、多価イソシアネ
ート化合物たとえば２，４−トリレンジイソシアネー
ト、２，６−トリレンジイソシアネート、１，３−キシ
リレンジイソシアネート、１，４−キシリレンジイソシ
アネート、ジフェニルメタン４，４−ジイソシアネート
などを反応させて得られる末端イソシアネートウレタン
プレポリマーに、ヒドロキシル基を有するアクリレート
あるいはメタクリレートたとえば２−ヒドロキシエチル
アクリレートまたは２−ヒドロキシエチルメタクリレー
ト、２−ヒドロキシプロピルアクリレート、２−ヒドロ
キシプロピルメタクリレート、ポリエチレングリコール
アクリレート、ポリエチレングリコールメタクリレート
などを反応させて得られる。Further, as the radiation polymerizable compound, a urethane acrylate oligomer can be used in addition to the acrylate compound described above. The urethane acrylate oligomer includes a polyol compound such as a polyester type or a polyether type, and a polyvalent isocyanate compound such as 2,4-tolylene diisocyanate, 2,6-tolylene diisocyanate, 1,3-xylylene diisocyanate, 1,4 -Acrylate or methacrylate having a hydroxyl group, such as 2-hydroxyethyl acrylate or 2-hydroxyethyl methacrylate, 2-hydroxypropyl acrylate, on a terminal isocyanate urethane prepolymer obtained by reacting xylylene diisocyanate, diphenylmethane 4,4-diisocyanate or the like. , 2-hydroxypropyl methacrylate, polyethylene glycol acrylate, polyethylene glycol methacrylate Obtained by.
【００２２】粘着剤中のアクリル系粘着剤と放射線重合
性化合物との配合比は、アクリル系粘着剤１００重量部
に対して放射線重合性化合物は５０〜２００重量部、好
ましくは５０〜１５０重量部、特に好ましくは７０〜１
２０重量部の範囲の量で用いられることが望ましい。こ
の場合には、得られる粘着シートは初期の接着力が大き
く、しかも放射線照射後には粘着力は大きく低下し、ポ
リイミド系接着剤層と放射線硬化型粘着剤層との界面で
の剥離が容易になり、チップ裏面にポリイミド系接着剤
層を伴って該粘着シートからチップをピックアップでき
る。The mixing ratio of the acrylic pressure-sensitive adhesive to the radiation-polymerizable compound in the pressure-sensitive adhesive is 50 to 200 parts by weight, preferably 50 to 150 parts by weight, per 100 parts by weight of the acrylic pressure-sensitive adhesive. And particularly preferably 70 to 1
Preferably, it is used in an amount in the range of 20 parts by weight. In this case, the resulting pressure-sensitive adhesive sheet has a large initial adhesive force, and the adhesive force is significantly reduced after irradiation, and the adhesive sheet easily peels off at the interface between the polyimide-based adhesive layer and the radiation-curable adhesive layer. Thus, the chip can be picked up from the pressure-sensitive adhesive sheet with the polyimide adhesive layer on the back surface of the chip.
【００２３】また、放射線硬化型粘着剤層２は、側鎖に
放射線重合性基を有するエネルギー線硬化型共重合体か
ら形成されていてもよい。このような放射線硬化型共重
合体は、粘着性と放射線硬化性とを兼ね備える性質を有
する。側鎖に放射線重合性基を有するエネルギー線硬化
型共重合体は、たとえば、特開平５−３２９４６号公
報、特開平８−２７２３９号公報等にその詳細が記載さ
れている。The radiation-curable pressure-sensitive adhesive layer 2 may be formed of an energy-ray-curable copolymer having a radiation-polymerizable group in a side chain. Such a radiation-curable copolymer has the property of having both adhesiveness and radiation-curability. The details of the energy ray-curable copolymer having a radiation polymerizable group in the side chain are described in, for example, JP-A-5-32946 and JP-A-8-27239.
【００２４】上記のような組成を有する放射線硬化型粘
着剤層２の放射線硬化後における弾性率は、好ましくは
１×１０9 dyn/cm2 以上、さらに好ましくは１×１０9
〜１×１０10 dyn/cm2である。The elastic modulus after radiation curing of a radiation-curable pressure-sensitive adhesive layer 2 having the above composition is preferably 1 × 10 9 dyn / cm 2 or more, further preferably 1 × 10 9
１1 × 10 10 dyn / cm 2 .
【００２５】ここで、弾性率は以下の手法により決定さ
れる値である。すなわち、層２を構成する放射線硬化型
粘着剤を長さ５０mm、幅４mm、厚さ０．２mmの粘着剤小
片とし、これを８０Ｗ／cmの高圧水銀灯下に置き、１秒
間放射線を照射し、硬化後の小片の弾性率を、粘弾性測
定装置（レオバイブロン：ＤＤＶ−II−ＥＰ、オリエン
テック（株）製）を用いて３．５Ｈｚで測定して得られ
るグラフより、２５℃の値を読み取って弾性率とする。Here, the elastic modulus is a value determined by the following method. That is, the radiation-curable pressure-sensitive adhesive constituting the layer 2 was formed into a small piece of pressure-sensitive adhesive having a length of 50 mm, a width of 4 mm, and a thickness of 0.2 mm, placed under a high-pressure mercury lamp of 80 W / cm, and irradiated with radiation for 1 second. The value at 25 ° C. was read from a graph obtained by measuring the elastic modulus of the cured small piece at 3.5 Hz using a viscoelasticity measuring device (Rheovibron: DDV-II-EP, manufactured by Orientec Co., Ltd.). To the elastic modulus.
【００２６】上記のような放射線硬化型粘着剤は、放射
線照射前には被着体に対して充分な接着力を有し、放射
線照射後には接着力が著しく減少する。すなわち、放射
線照射前には、ポリイミド系接着剤層４を充分な接着力
で保持するが、放射線照射後には、ポリイミド系接着剤
層４を容易に剥離することができる。The radiation-curable pressure-sensitive adhesive as described above has a sufficient adhesive force to the adherend before irradiation, and the adhesive force is significantly reduced after irradiation. That is, before the irradiation, the polyimide-based adhesive layer 4 is held with a sufficient adhesive force, but after the irradiation, the polyimide-based adhesive layer 4 can be easily peeled off.
【００２７】このような放射線硬化型粘着剤層２の膜厚
は、通常は、３〜５０μｍ程度であり、好ましくは５〜
３０μｍ程度である。さらに上記の放射線硬化型粘着剤
層２中に、ＵＶ照射用の場合には、ＵＶ開始剤を混入す
ることにより、ＵＶ照射による重合硬化時間ならびにＵ
Ｖ照射量を少なくすることができる。The thickness of the radiation-curable pressure-sensitive adhesive layer 2 is usually about 3 to 50 μm, preferably 5 to 50 μm.
It is about 30 μm. Further, in the case of UV irradiation, a UV initiator is mixed into the radiation-curable pressure-sensitive adhesive layer 2 so that the polymerization curing time by UV irradiation and U
The amount of V irradiation can be reduced.
【００２８】このようなＵＶ開始剤としては、具体的に
は、ベンゾイン、ベンゾインメチルエーテル、ベンゾイ
ンエチルエーテル、ベンゾインイソプロピルエーテル、
ベンジルジフェニルサルファイド、テトラメチルチウラ
ムモノサルファイド、アゾビスイソブチロニトリル、ジ
ベンジル、ジアセチル、β−クロールアンスラキノンな
どが挙げられる。Specific examples of such a UV initiator include benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether,
Benzyldiphenyl sulfide, tetramethylthiuram monosulfide, azobisisobutyronitrile, dibenzyl, diacetyl, β-chloranthraquinone and the like can be mentioned.
【００２９】放射線硬化型粘着剤層２上に形成されるポ
リイミド系接着剤層４は、ポリイミド系樹脂からなる。
ポリイミド系樹脂は、ポリイミド樹脂自体と、ポリイミ
ド樹脂の前駆体とを包含する。ポリイミド樹脂は、側鎖
または主鎖にイミド結合を有する。またポリイミド樹脂
前駆体とは、適当な熱処理によって、上記のポリイミド
樹脂を与えるものをいう。このようなポリイミド系樹脂
としては、具体的には、ポリイミド樹脂、ポリイソイミ
ド樹脂、マレイミド樹脂、ビスマレイミド樹脂、ポリア
ミドイミド樹脂、ポリエーテルイミド樹脂、ポリ−イミ
ド・イソインドロキナゾリンジオンイミド樹脂等が挙げ
られ、これらの樹脂単独もしくは２つ以上混合させて使
用することができる。これらの中でも特にポリイミド樹
脂が好ましい。The polyimide adhesive layer 4 formed on the radiation-curable pressure-sensitive adhesive layer 2 is made of a polyimide resin.
The polyimide resin includes the polyimide resin itself and a precursor of the polyimide resin. The polyimide resin has an imide bond in a side chain or a main chain. The term “polyimide resin precursor” refers to one that gives the above-mentioned polyimide resin by an appropriate heat treatment. Specific examples of such a polyimide resin include a polyimide resin, a polyisoimide resin, a maleimide resin, a bismaleimide resin, a polyamideimide resin, a polyetherimide resin, and a poly-imide / isoindoloquinazolinedioneimide resin. These resins can be used alone or as a mixture of two or more. Among these, a polyimide resin is particularly preferable.
【００３０】ポリイミド系樹脂の分子量は、好ましくは
１０，０００〜１，０００，０００、特に好ましくは５
０，０００〜１００，０００程度である。上記のような
ポリイミド系樹脂には、反応性官能基を有しない熱可塑
性ポリイミド系樹脂と加熱によりイミド化反応する熱硬
化性のポリイミド樹脂が存在するが、そのいずれであっ
てもよい。The molecular weight of the polyimide resin is preferably 10,000 to 1,000,000, particularly preferably 5 to 5,000,000.
It is about 0000 to 100,000. Among the above-mentioned polyimide resins, there is a thermosetting polyimide resin which undergoes an imidization reaction with a thermoplastic polyimide resin having no reactive functional group by heating, and any of them may be used.
【００３１】また、ポリイミド系樹脂に、他のポリマー
やオリゴマー、低分子化合物を添加したポリイミド系接
着剤を用いてもよい。たとえば、エポキシ樹脂、アミド
樹脂、ウレタン樹脂、アミド酸樹脂、アクリル樹脂、シ
リコーン樹脂などの各種ポリマーやオリゴマー；トリエ
タノールアミンやα，ω−（ビス３−アミノプロピル）
ポリエチレングリコールエーテルなどの含窒素有機化合
物などを添加剤として挙げることができる。A polyimide adhesive obtained by adding another polymer, oligomer, or low molecular compound to a polyimide resin may be used. For example, various polymers and oligomers such as epoxy resin, amide resin, urethane resin, amic acid resin, acrylic resin, and silicone resin; triethanolamine and α, ω- (bis-3-aminopropyl)
Additives include nitrogen-containing organic compounds such as polyethylene glycol ether.
【００３２】また、ポリイミド系接着剤組成物を調製す
る際に、上記各成分を均一に溶解・分散させることが可
能な溶媒を用いることもできる。このような溶媒として
は、上記材料を均一に溶解・分散できるものであれば特
に限定はなく、たとえばジメチルホルムアミド、ジメチ
ルアセトアミド、Ｎ−メチルピロリドン、ジメチルスル
ホキシド、ジエチレングリコールジメチルエーテル、ト
ルエン、ベンゼン、キシレン、メチルエチルケトン、テ
トラヒドロフラン、エチルセロソルブ、ジオキサン、シ
クロペンタノン、シクロヘキサノン等を挙げることがで
き、１種類のみを用いてもよいし、２種類以上を混合し
て用いてもよい。In preparing the polyimide-based adhesive composition, a solvent capable of uniformly dissolving and dispersing the above components can also be used. Such a solvent is not particularly limited as long as it can uniformly dissolve and disperse the above-mentioned materials. , Tetrahydrofuran, ethyl cellosolve, dioxane, cyclopentanone, cyclohexanone, etc., and only one kind may be used or two or more kinds may be used in combination.
【００３３】ポリイミド系接着剤層４の膜厚は、好まし
くは１〜５０μｍ程度であり、特に好ましくは５〜２０
μｍ程度である。上記のようなポリイミド系接着剤層４
を、放射線硬化型粘着剤層２上に設けるには、図２に示
すように、ポリイミド系接着剤層４をポリイミド用工程
フィルム５上に成膜した後に、得られた積層体のポリイ
ミド系接着剤層面を放射線硬化型粘着剤層２面に貼着
し、ポリイミド系接着剤層を放射線硬化型粘着剤２上に
積層することにより行う。The thickness of the polyimide adhesive layer 4 is preferably about 1 to 50 μm, particularly preferably 5 to 20 μm.
It is about μm. Polyimide adhesive layer 4 as described above
Is provided on the radiation-curable pressure-sensitive adhesive layer 2, as shown in FIG. 2, a polyimide-based adhesive layer 4 is formed on a process film 5 for polyimide, and then a polyimide-based adhesive This is performed by adhering the surface of the agent layer to the surface of the radiation-curable pressure-sensitive adhesive layer 2 and laminating a polyimide-based adhesive layer on the radiation-curable pressure-sensitive adhesive 2.
【００３４】ポリイミド用工程フィルム５としては、具
体的には、ポリエチレンナフタレートフィルム、ポリエ
チレンテレフタレートフィルム、ポリブチレンテレフタ
レートフィルム、ポリイミドフィルム、ポリエーテルイ
ミドフィルム、ポリアラミドフィルム、ポリエーテルケ
トンフィルム、ポリエーテル・エーテルケトンフィル
ム、ポリフェニレンサルファイドフィルム、ポリ（4-メ
チルペンテン-1）フィルム等の耐熱性フィルムが用いら
れる。また、ポリイミド用工程フィルム５はこれらフィ
ルムの積層体であってもよい。さらに、上記フィルム
と、他のフィルムとの積層体であってもよい。これらの
中でも特に好ましくはポリエチレンナフタレートフィル
ムが用いられる。As the process film 5 for polyimide, specifically, polyethylene naphthalate film, polyethylene terephthalate film, polybutylene terephthalate film, polyimide film, polyetherimide film, polyaramid film, polyetherketone film, polyether A heat-resistant film such as an ether ketone film, a polyphenylene sulfide film, and a poly (4-methylpentene-1) film is used. The process film for polyimide 5 may be a laminate of these films. Furthermore, a laminate of the above film and another film may be used. Among these, a polyethylene naphthalate film is particularly preferably used.
【００３５】ポリイミド用工程フィルム５の膜厚は、そ
の材質にもよるが、通常は１０〜３００μｍ程度であ
り、好ましくは１６〜１００μｍ程度である。また、ポ
リイミド接着剤層との剥離性を付与するためには、ポリ
イミド用工程フィルム５の片面に離型処理を施してお
き、この離型処理面に、ポリイミド系接着剤層を設ける
ことが好ましい。The film thickness of the process film for polyimide 5 is usually about 10 to 300 μm, preferably about 16 to 100 μm, though it depends on the material. Further, in order to impart releasability to the polyimide adhesive layer, it is preferable to perform a release treatment on one surface of the process film for polyimide 5 and to provide a polyimide adhesive layer on this release treated surface. .
【００３６】このような離型処理に用いられる離型剤と
しては、アルキッド系、シリコーン系、フッ素系、不飽
和ポリエステル系、ポリオレフィン系、ワックス系等が
用いられるが、特にアルキッド系、シリコーン系、フッ
素系の離型剤が耐熱性を有するので好ましい。特に表面
張力が調整しやすいため、アルキッド樹脂が好ましい。Examples of the release agent used in the release treatment include alkyds, silicones, fluorines, unsaturated polyesters, polyolefins, and waxes. Particularly, alkyds, silicones, Fluorine release agents are preferred because they have heat resistance. Particularly, an alkyd resin is preferable because the surface tension is easily adjusted.
【００３７】上述したように、本発明に係るウェハ貼着
用シート１０は、基材フィルム１、放射線硬化型粘着剤
層２およびポリイミド系接着剤層４が順次積層されてな
る。本発明に係るウェハ貼着用シート１０においては、
図１に示すように放射線硬化型粘着剤層２の面積を、ポ
リイミド系接着剤層４の面積よりも大きくし、放射線硬
化型粘着剤層２の一部を露出させておくことが好まし
い。露出した放射線硬化型粘着剤２は、図３に示すよう
に、ダイシング時にシート１０を固定するためのリング
フレーム６の接着に使用される。As described above, the wafer sticking sheet 10 according to the present invention is formed by sequentially laminating the base film 1, the radiation-curable pressure-sensitive adhesive layer 2, and the polyimide-based adhesive layer 4. In the wafer sticking sheet 10 according to the present invention,
As shown in FIG. 1, it is preferable that the area of the radiation-curable pressure-sensitive adhesive layer 2 is larger than the area of the polyimide-based adhesive layer 4 so that a part of the radiation-curable pressure-sensitive adhesive layer 2 is exposed. The exposed radiation-curable pressure-sensitive adhesive 2 is used for bonding a ring frame 6 for fixing the sheet 10 at the time of dicing, as shown in FIG.
【００３８】すなわち、本発明のウェハ貼着用シート１
０においては、前記放射線硬化型粘着剤層２が、ウェハ
ダイシング用のリングフレーム６に支持可能な面積を有
し、かつ、前記ポリイミド系接着剤層４の外径が、ウェ
ハダイシング用のリングフレーム６の内径よりも小さい
ものであることが好ましい。That is, the wafer sticking sheet 1 of the present invention.
0, the radiation-curable pressure-sensitive adhesive layer 2 has an area that can be supported by the ring frame 6 for wafer dicing, and the outer diameter of the polyimide-based adhesive layer 4 is smaller than the ring frame for wafer dicing. Preferably, it is smaller than the inner diameter of 6.
【００３９】本発明のウェハ貼着用シート１０において
は、１００〜３００℃、好ましくは１２０〜１５０℃程
度の加熱、および１〜１０kg／cm2 好ましくは１〜４kg
／cm 2 程度の加圧条件下でウェハをポリイミド系接着剤
層４に熱圧着可能であり、熱圧着により、ウェハに対し
好ましくは１００ｇ／２５ｍｍ以上、特に好ましくは４
００ｇ／２５ｍｍ以上の接着力を有するようになる。前
記接着力は、「１８０°剥離試験法（ＪＩＳ Ｚ ０２
３７）に準じて得られたものである。In the sheet 10 for attaching a wafer according to the present invention.
Is 100 to 300 ° C, preferably about 120 to 150 ° C
Degree of heating, and 1-10 kg / cmTwoPreferably 1-4 kg
/cm TwoWafer under polyimide pressure
Thermocompression bonding to the layer 4 is possible, and the thermocompression bonding
Preferably at least 100 g / 25 mm, particularly preferably 4 g
It has an adhesive force of 00 g / 25 mm or more. Before
The adhesive strength was measured using the 180 ° peel test method (JIS Z 02
37).
【００４０】次に本発明に係る半導体装置の製造方法に
ついて説明する。本発明の第１の製造方法においては、
まず、ウェハ貼着用シート１０をダイシング装置上に、
リングフレーム６により固定し、半導体ウェハ７の一方
の面をウェハ貼着用シート１０のポリイミド系接着剤層
４上に熱圧着する。熱圧着の条件は上記のとおりであ
る。次いで、ダイシングソーなどの切断手段を用いて、
上記の半導体ウェハ７を切断しＩＣチップを得る（図４
参照）。この際の切断深さは、半導体ウェハ７とポリイ
ミド系接着剤層４との厚みおよびダイシングソーの磨耗
分を加味した深さにする。Next, a method of manufacturing a semiconductor device according to the present invention will be described. In the first manufacturing method of the present invention,
First, the wafer bonding sheet 10 is placed on a dicing device,
The semiconductor wafer 7 is fixed by the ring frame 6, and one surface of the semiconductor wafer 7 is thermocompression-bonded to the polyimide adhesive layer 4 of the wafer bonding sheet 10. The conditions for thermocompression bonding are as described above. Then, using cutting means such as a dicing saw,
The semiconductor wafer 7 is cut to obtain IC chips (FIG. 4).
reference). The cutting depth at this time is set to a depth in consideration of the thickness of the semiconductor wafer 7 and the polyimide-based adhesive layer 4 and the wear of the dicing saw.
【００４１】次いで、ウェハ貼着用シート１０の放射線
硬化型粘着剤層２に放射線を照射する。本発明において
使用することができる放射線としては、紫外線（中心波
長＝約３６５nm）および電子線等が挙げられる。エネル
ギー線として紫外線を使用する場合、通常、照度は２０
〜５００mW／cm2、さらに照射時間は０．１〜１５０秒
の範囲内に設定される。また、たとえば電子線を照射す
る場合にも、上記の紫外線照射の場合に準じて諸条件を
設定することができる。なお、上記のような放射線照射
の際に補助的に加熱することもできる。Next, the radiation-curable pressure-sensitive adhesive layer 2 of the wafer bonding sheet 10 is irradiated with radiation. Radiation that can be used in the present invention includes ultraviolet rays (center wavelength = about 365 nm), electron beams and the like. When using ultraviolet rays as energy rays, the illuminance is usually 20
~500mW / cm 2, further the irradiation time is in the range of 0.1 to 150 seconds. Also, for example, when irradiating an electron beam, various conditions can be set according to the above-described case of irradiating an ultraviolet ray. In addition, it is also possible to perform auxiliary heating during radiation irradiation as described above.
【００４２】このように放射線の照射を行なうことによ
り、放射線硬化型粘着剤層２中の放射線重合性化合物が
重合し、放射線硬化型粘着剤層２が硬化する。この結
果、チップ裏面のポリイミド系接着剤層４と放射線硬化
型粘着剤層２との接着力が低下し、ポリイミド系接着剤
層をＩＣチップの裏面に固着残存させて放射線硬化型粘
着剤層２から剥離することができる。By irradiating radiation as described above, the radiation-polymerizable compound in the radiation-curable pressure-sensitive adhesive layer 2 is polymerized, and the radiation-curable pressure-sensitive adhesive layer 2 is cured. As a result, the adhesive strength between the polyimide-based adhesive layer 4 and the radiation-curable pressure-sensitive adhesive layer 2 on the back surface of the chip is reduced, and the polyimide-based adhesive layer is fixed and left on the back surface of the IC chip, thereby reducing the radiation-curable pressure-sensitive adhesive layer 2 Can be peeled off.
【００４３】なお、放射線の照射は、ダイシング工程の
前に行なわれていてもよい。また、ＩＣチップの剥離
（ピックアップ）に先立ち、ウェハ貼着用シート１０の
エキスパンドを行うと、図５に示すようにＩＣチップ間
隔が拡張し、ＩＣチップのピックアップをさらに容易に
行えるようになる。The irradiation of the radiation may be performed before the dicing step. Further, if the sheet 10 for attaching a wafer is expanded prior to the peeling (pickup) of the IC chip, the IC chip interval is expanded as shown in FIG. 5, so that the IC chip can be more easily picked up.
【００４４】また、本発明の第２の製造方法において
は、前述したポリイミド用工程フィルム５とその上に形
成されたポリイミド系接着剤層４とからなるポリイミド
接着シート８、および基材フィルム１とその上に形成さ
れた放射線硬化型粘着剤２とからなる粘着シート３を別
々に用意する。次いで、図６に示すように、半導体ウェ
ハ７を、ポリイミド接着シート８のポリイミド系接着剤
層４に熱圧着する。熱圧着の条件は前記のとおりであ
る。次に、ポリイミド用工程フィルム５を剥離除去し、
ポリイミド系接着剤層４を半導体ウェハ７の裏面に転写
する。次いで、粘着シート３の放射線硬化型粘着剤層２
を、ポリイミド系接着剤層４が熱圧着された半導体ウェ
ハ７のポリイミド系接着剤層４面に貼着固定するととも
に、これらをリングフレーム６で固定する。引続き、上
記第１の製造方法と同様にして、ダイシング、ピックア
ップ等の各工程を行う（図４〜図５）。Further, in the second production method of the present invention, the polyimide adhesive sheet 8 comprising the above-mentioned polyimide process film 5 and the polyimide adhesive layer 4 formed thereon, and the base film 1 The pressure-sensitive adhesive sheet 3 composed of the radiation-curable pressure-sensitive adhesive 2 formed thereon is separately prepared. Next, as shown in FIG. 6, the semiconductor wafer 7 is thermocompression-bonded to the polyimide adhesive layer 4 of the polyimide adhesive sheet 8. The conditions of the thermocompression bonding are as described above. Next, the process film 5 for polyimide is peeled off and removed.
The polyimide adhesive layer 4 is transferred to the back surface of the semiconductor wafer 7. Next, the radiation-curable pressure-sensitive adhesive layer 2 of the pressure-sensitive adhesive sheet 3
Is adhered and fixed to the surface of the polyimide adhesive layer 4 of the semiconductor wafer 7 to which the polyimide adhesive layer 4 is thermocompression-bonded, and these are fixed by the ring frame 6. Subsequently, the respective steps such as dicing and pickup are performed in the same manner as in the first manufacturing method (FIGS. 4 and 5).
【００４５】このようにして得られた、裏面にポリイミ
ド系接着剤層を有するチップは、特にチップ裏面の一部
または全部がモールド樹脂に接触する構造の半導体装置
の製造に好適に用いられる。このような構造の半導体装
置では、チップ裏面と封止樹脂とがポリイミド系接着剤
層を介して強固に接着するので、パッケージクラックの
発生が防止される。The thus obtained chip having a polyimide adhesive layer on the back surface is suitably used particularly for manufacturing a semiconductor device having a structure in which a part or the whole of the chip back surface is in contact with the mold resin. In the semiconductor device having such a structure, since the back surface of the chip and the sealing resin are firmly adhered to each other via the polyimide-based adhesive layer, the occurrence of package cracks is prevented.
【００４６】なお、この際に用いる封止樹脂としては、
クレゾールノボラック型エポキシ、ナフタレン型エポキ
シ、ビフェニル型エポキシあるいは芳香族多官能型エポ
キシを主原料とし、フェノールノボラック等の一般に用
いられる硬化剤およびシリカ、シリコーン、カーボン、
フィラー等を混合した樹脂が好ましく用いられる。The sealing resin used at this time is as follows:
Cresol novolak type epoxy, naphthalene type epoxy, biphenyl type epoxy or aromatic polyfunctional type epoxy as a main raw material, a commonly used curing agent such as phenol novolak and silica, silicone, carbon,
A resin mixed with a filler or the like is preferably used.
【００４７】[0047]
【発明の効果】本発明に係るウェハ貼着用シートは、ウ
ェハプロセス終了後のウェハを貼付し、ダイシング加工
してチップとし、このチップを用いてＬＯＣ構造に代表
されるようなチップ裏面の一部または全部がモールド樹
脂に接触する構造の半導体装置を製造するために好適に
用いられる。このような本発明によれば、製造された半
導体装置にパッケージクラック等が発生せず、製品の信
頼性を向上できるようになる。The wafer sticking sheet according to the present invention is obtained by sticking the wafer after the wafer process, dicing and forming a chip, and using the chip, a part of the chip back surface represented by the LOC structure. Alternatively, it is suitably used for manufacturing a semiconductor device having a structure in which the whole comes into contact with the mold resin. According to the present invention, package cracks and the like do not occur in the manufactured semiconductor device, and the reliability of the product can be improved.
【００４８】[0048]
【実施例】以下本発明を実施例により説明するが、本発
明はこれら実施例に限定されるものではない。EXAMPLES The present invention will be described below with reference to examples, but the present invention is not limited to these examples.
【００４９】なお、以下の実施例および比較例におい
て、「パッケージクラック発生率」、「チップ飛散数」
および「チップ剥離力」は次のようにして評価した。パッケージクラック発生率 ダイシング後、ウェハダイシング・接着シートからチッ
プを取り出し、リードフレームにマウントし、ボンディ
ング後、所定のモールド樹脂（ビフェニル型エポキシ樹
脂）で高圧封止する。１７５℃、６時間をを要して、そ
の樹脂を硬化させ、パッケージとして完成させた後、８
５℃、８５％ＲＨの環境下に１６８時間放置する。その
後、２１５℃のＶＰＳ（Vapor Phase Soldering）（所
要時間：１分間）を３回行い、走査型超音波探傷機ＳＡ
Ｔ（Scanning Acoustic Tomography）で封止樹脂のクラ
ックの有無を検査する。投入検体数に対するクラック発
生数の比率をパッケージクラック発生率とする。チップ飛散数 各チップサイズにダイシングした後、発生したシリコン
や樹脂等の切削屑をウェハを回転させながら純水及びガ
ス洗浄する洗浄工程において、発生する飛散チップ数
（周縁の不定形部分を含む）をカウントした。チップ剥離力 ダイシング・接着シートに接着したウェハを各チップサ
イズにダイシングし、ＵＶ照射した後、該シートのエキ
スパンドシート側、即ち基材フィルム１の放射線硬化型
粘着剤層２とは反対の面を厚さ１０mmのガラス板に両面
粘着シートで固定した。ダイシングされたチップの表面
に鍵形状の垂直懸架用治具を瞬間接着剤で固定し、イン
ストロン４２０４型万能材料試験機（インストロン
（株）製）のクロスヘッド部にループ状のナイロンで固
定し、これを前記治具の鍵状部に掛けて、クロスヘッド
速度５００mm／分で垂直剥離したときの最大値をチップ
剥離力とした。In the following examples and comparative examples, the “package crack occurrence rate” and “chip scattering number”
And "chip peeling force" was evaluated as follows. After the package crack occurrence rate dicing, removed chips from the wafer dicing adhesive sheet, mounted on a lead frame, high pressure seal after bonding, a predetermined mold resin (biphenyl epoxy resin). After curing the resin at 175 ° C. for 6 hours and completing the package,
Leave in an environment of 5 ° C. and 85% RH for 168 hours. Thereafter, VPS (Vapor Phase Soldering) at 215 ° C. (required time: 1 minute) is performed three times, and the scanning ultrasonic flaw detector SA
The presence or absence of cracks in the sealing resin is inspected by T (Scanning Acoustic Tomography). The ratio of the number of cracks generated to the number of input samples is defined as the package crack generation rate. Number of chips scattered After dicing to each chip size, the number of scattered chips generated (including irregular shaped parts at the periphery) in the cleaning process of cleaning the generated chips such as silicon and resin while rotating the wafer with pure water and gas Was counted. After the wafer bonded to the dicing / adhesive sheet is diced to each chip size and irradiated with UV, the expanded sheet side of the sheet, that is, the surface of the base film 1 opposite to the radiation-curable pressure-sensitive adhesive layer 2 is cleaned. It was fixed on a glass plate having a thickness of 10 mm with a double-sided adhesive sheet. A key-shaped vertical suspension jig is fixed to the surface of the diced chip with an instant adhesive, and fixed to the crosshead of an Instron 4204 universal material tester (manufactured by Instron) with loop-shaped nylon. Then, this was hooked on the key-like portion of the jig, and the maximum value when vertically peeled at a crosshead speed of 500 mm / min was defined as the chip peeling force.
【００５０】[0050]
【実施例１】 「放射線硬化型粘着剤の調整」アクリル系粘着剤（ヒド
ロキシエチルアクリレートとブチルアクリレートとの共
重合体：ヒドロキシエチルアクリレート含量＝９重量％
（９.８モル％））１００重量部と、分子量約６０００
の２官能ウレタンアクリレート系オリゴマー（大日精化
工業社製）７０重量部と、４官能ポリエステル系オリゴ
マー３０重量部、芳香族イソシアナート（東洋インキ製
造（株）製）１０重量部とを混合して放射線硬化型粘着
剤を調製した。Example 1 "Preparation of radiation-curable pressure-sensitive adhesive" Acrylic pressure-sensitive adhesive (copolymer of hydroxyethyl acrylate and butyl acrylate: hydroxyethyl acrylate content = 9% by weight)
(9.8 mol%)) 100 parts by weight and a molecular weight of about 6000
70 parts by weight of a bifunctional urethane acrylate oligomer (manufactured by Dainichi Seika Kogyo Co., Ltd.), 30 parts by weight of a tetrafunctional polyester oligomer, and 10 parts by weight of an aromatic isocyanate (manufactured by Toyo Ink Mfg. Co., Ltd.) A radiation-curable pressure-sensitive adhesive was prepared.
【００５１】この放射線硬化型粘着剤を用いて、「弾性
率」を評価した。結果を表１に示す。 「粘着シートの作製」厚さ１００μｍのポリエチレンフ
ィルム上に、上記の放射線硬化型粘着剤を塗布量１０ｇ
／ｍ2となるように塗布し、放射線硬化型粘着剤層を設
けた。この粘着剤層の上に、剥離シートとしてＰＥＴフ
ィルムを積層して粘着シートを作製した。Using this radiation-curable pressure-sensitive adhesive, the "elastic modulus" was evaluated. Table 1 shows the results. "Preparation of pressure-sensitive adhesive sheet" 10 g of the above radiation-curable pressure-sensitive adhesive applied on a 100-μm-thick polyethylene film
/ M 2 to provide a radiation-curable pressure-sensitive adhesive layer. On this adhesive layer, a PET film was laminated as a release sheet to produce an adhesive sheet.
【００５２】「ポリイミド接着シートの作製」アルキッ
ド系剥離剤により剥離処理したポリエチレンナフタレー
トフィルム（厚さ２５μｍ：融点２７℃、表面張力３４
ｄｙｎ／ｃｍ）をポリイミド用工程フィルムとし、この
処理面に熱可塑性ポリイミド接着剤のシクロヘキサノン
溶液を塗布厚１０μｍとなるように塗布し、乾燥（１４
０℃、３分）してポリイミド接着シートを作製した。[Preparation of Polyimide Adhesive Sheet] A polyethylene naphthalate film (thickness: 25 μm;
dyn / cm) is used as a process film for polyimide, and a cyclohexanone solution of a thermoplastic polyimide adhesive is applied on the treated surface so as to have an application thickness of 10 μm, and dried (14).
(0 ° C., 3 minutes) to produce a polyimide adhesive sheet.
【００５３】「半導体装置の作製」上記のポリイミド接
着シートを直径１５０ｍｍに打ち抜き加工し、６インチ
ウェハを熱圧着（１４０℃、３０秒）させ、その後、ポ
リイミド用工程フィルムを剥離した。先に作製した、ウ
ェハ貼着用粘着シートでポリイミド系接着剤面と放射線
硬化型粘着剤面が接するように貼付し、ウェハをリング
フレームに固定した。これを１０ｍｍ×１０ｍｍのチッ
プにダイシングし、ピックアップ、ボンディング及びＩ
Ｃモールドを行なった。同様に、異なるチップサイズで
ある３mm×３mmのチップも試料として作製した。[Preparation of Semiconductor Device] The above-mentioned polyimide adhesive sheet was punched into a diameter of 150 mm, a 6-inch wafer was subjected to thermocompression bonding (140 ° C., 30 seconds), and then the polyimide process film was peeled off. The wafer-adhered pressure-sensitive adhesive sheet prepared above was adhered so that the polyimide-based adhesive surface and the radiation-curable pressure-sensitive adhesive surface were in contact with each other, and the wafer was fixed to a ring frame. This is diced into a 10 mm × 10 mm chip, and pick-up, bonding and I
C molding was performed. Similarly, 3 mm × 3 mm chips having different chip sizes were also prepared as samples.
【００５４】次いで、上記の手法により「パッケージク
ラック発生率」、「チップ飛散数」及び「チップ剥離
力」を測定した結果を表１に示す。Next, Table 1 shows the results of measuring the "package crack occurrence rate", the "chip scatter number", and the "chip peeling force" by the above method.
【００５５】[0055]
【実施例２】実施例１の放射線硬化型粘着剤の調製にお
いて、４官能ポリエステル系オリゴマー３０重量部に代
えて、６官能ポリエステルアクリレート系オリゴマー
（日本化薬社製）３０重量部を用いた以外は、実施例１
と同様の操作を行なった。Example 2 In the preparation of the radiation-curable pressure-sensitive adhesive of Example 1, except that 30 parts by weight of a 4-functional polyester-based oligomer (30 parts by weight of Nippon Kayaku Co., Ltd.) was used instead of 30 parts by weight. Example 1
The same operation as described above was performed.
【００５６】結果を表１に示す。Table 1 shows the results.
【００５７】[0057]
【実施例３】実施例１の放射線硬化型粘着剤の調製にお
いて、アクリル系粘着剤をヒドロキシエチルアクリレー
トとブチルアクリレートとの共重合体（ヒドロキシエチ
ルアクリレート含量：２５重量％（２６.９モル％））
に代えた以外は、実施例１と同様の操作を行なった。Example 3 In the preparation of the radiation-curable pressure-sensitive adhesive of Example 1, an acrylic pressure-sensitive adhesive was used as a copolymer of hydroxyethyl acrylate and butyl acrylate (hydroxyethyl acrylate content: 25% by weight (26.9 mol%)). )
The same operation as in Example 1 was performed, except that the procedure was replaced with
【００５８】結果を表１に示す。Table 1 shows the results.
【００５９】[0059]
【実施例４】 「放射線硬化型粘着剤の調整」アクリル系粘着剤（ヒド
ロキシエチルアクリレートとブチルアクリレートとの共
重合体：ヒドロキシエチルアクリレート含量＝２５重量
％（２６.９モル％））１００重量部と、分子量約６０
００の２官能ウレタンアクリレート系オリゴマー（大日
精化工業社製）７０重量部と、６官能ポリエステル系オ
リゴマー３０重量部（日本化薬社製）、芳香族イソシア
ナート（東洋インキ製造（株）製）１０重量部とを混合
して放射線硬化型粘着剤を調製した。この放射線硬化型
粘着剤を用いて、「弾性率」を評価した。結果を表１に
示す。次いで、実施例１の放射線硬化型粘着剤の代わり
に、上記の放射線硬化型粘着剤を用いた以外は、実施例
１と同様の操作を行なった。Example 4 "Preparation of radiation-curable pressure-sensitive adhesive" 100 parts by weight of acrylic pressure-sensitive adhesive (copolymer of hydroxyethyl acrylate and butyl acrylate: hydroxyethyl acrylate content = 25% by weight (26.9 mol%)) And a molecular weight of about 60
70 parts by weight of a bifunctional urethane acrylate oligomer (manufactured by Dainichi Seika Kogyo Co., Ltd.), 30 parts by weight of a hexafunctional polyester oligomer (manufactured by Nippon Kayaku Co., Ltd.), aromatic isocyanate (manufactured by Toyo Ink Mfg. Co., Ltd.) The mixture was mixed with 10 parts by weight to prepare a radiation-curable pressure-sensitive adhesive. The "elastic modulus" was evaluated using this radiation-curable pressure-sensitive adhesive. Table 1 shows the results. Next, the same operation as in Example 1 was performed except that the above radiation-curable pressure-sensitive adhesive was used instead of the radiation-curable pressure-sensitive adhesive of Example 1.
【００６０】結果を表１に示す。Table 1 shows the results.
【００６１】[0061]
【実施例５】 「放射線硬化型粘着剤の調製」アクリル系粘着剤（メチ
ルメタクリレートとブチルアクリレートとアクリル酸と
の共重合体：メチルメタクリレート含量＝２０重量％、
ブチルアクリレート含量＝７５重量％）１００重量部
と、２官能変性ビスフェノールＡアクリレート（日本化
薬社製）７０重量部と芳香族イソシアナート（東洋イン
キ製造（株）製）１０重量部とを混合して放射線硬化型
粘着剤を調製した。この放射線硬化型粘着剤を用いて、
「弾性率」を評価した。Example 5 “Preparation of radiation-curable pressure-sensitive adhesive” Acrylic pressure-sensitive adhesive (copolymer of methyl methacrylate, butyl acrylate and acrylic acid: methyl methacrylate content = 20% by weight,
100 parts by weight of butyl acrylate (75% by weight), 70 parts by weight of bifunctional modified bisphenol A acrylate (manufactured by Nippon Kayaku Co., Ltd.) and 10 parts by weight of aromatic isocyanate (manufactured by Toyo Ink Mfg. Co., Ltd.) Thus, a radiation-curable pressure-sensitive adhesive was prepared. Using this radiation-curable adhesive,
The "elastic modulus" was evaluated.
【００６２】結果を表１に示す。 「ウェハ貼着用シートの作製」厚さ１００μｍのポリエ
チレンナフタレートフィルム上に、上記の放射線硬化型
粘着剤を塗布量１０ｇ／ｍ2となるように塗布し、放射
線硬化型粘着剤層を設けた。この粘着剤層の上に、剥離
シートとしてＰＥＴフィルムを積層して粘着シートを作
製した。Table 1 shows the results. "Preparation of Wafer Adhering Sheet" The radiation-curable pressure-sensitive adhesive was applied on a 100-μm-thick polyethylene naphthalate film so as to have a coating amount of 10 g / m 2 , thereby providing a radiation-curable pressure-sensitive adhesive layer. On this adhesive layer, a PET film was laminated as a release sheet to produce an adhesive sheet.
【００６３】続いて、実施例１と同様にして作製したポ
リイミド接着シートを直径１５０ｍｍに打ち抜き加工
し、ポリイミド系接着剤面と放射線硬化型粘着剤面が接
するように粘着シートを貼付してウェハ貼着用シートを
作製した。Subsequently, the polyimide adhesive sheet produced in the same manner as in Example 1 was punched out to a diameter of 150 mm, and the adhesive sheet was attached so that the polyimide adhesive face and the radiation-curable adhesive face were in contact with each other, and the wafer was attached. A wearing sheet was prepared.
【００６４】「半導体装置の作製」ウェハ貼着用シート
のポリイミド工程用フィルムを剥離し、ポリイミド系接
着剤面に６インチウェハを熱圧着（１４０℃、３０秒）
し、放射線硬化型粘着剤によりウェハをリングフレーム
に固定した。これを１０ｍｍ×１０ｍｍのチップにダイ
シングし、ピックアップ、ボンディング及びＩＣモール
ドを行なった。同様に、異なるチップサイズである３mm
×３mmのチップも試料として作製した。[Preparation of Semiconductor Device] The polyimide process film on the wafer sticking sheet was peeled off, and a 6-inch wafer was thermocompression-bonded to the polyimide-based adhesive surface (140 ° C., 30 seconds).
Then, the wafer was fixed to a ring frame with a radiation-curable adhesive. This was diced into a 10 mm × 10 mm chip, and pickup, bonding, and IC molding were performed. Similarly, a different chip size of 3mm
A 3 mm chip was also prepared as a sample.
【００６５】次いで、実施例１と同様に評価を行なっ
た。その結果を表１に示す。Next, evaluation was performed in the same manner as in Example 1. Table 1 shows the results.
【００６６】[0066]
【比較例１】 「粘着剤の調製」ヒドロキシエチルアクリレートとブチ
ルアクリレートとの共重合体（ヒドロキシエチルアクリ
レート含量＝９重量％（９.８モル％））１００重量部
と、芳香族イソシアナート（東洋インキ製造（株）製）
１０重量部とを混合して非放射線硬化型の粘着剤を調製
した。Comparative Example 1 "Preparation of Adhesive" 100 parts by weight of a copolymer of hydroxyethyl acrylate and butyl acrylate (hydroxyethyl acrylate content = 9% by weight (9.8% by mole)) and an aromatic isocyanate (Toyo) Ink Manufacturing Co., Ltd.)
The mixture was mixed with 10 parts by weight to prepare a non-radiation-curable pressure-sensitive adhesive.
【００６７】「粘着シートの作製」厚さ１００μｍのポ
リエチレンナフタレートフィルム上に、上記のアクリル
系粘着剤を塗布量１０ｇ／ｍ2となるように塗布し、ア
クリル系粘着剤層を設けた。この粘着剤層の上に、剥離
シートとしてＰＥＴフィルムを積層して非放射線硬化型
の粘着シートを作製した。[Preparation of Pressure-sensitive Adhesive Sheet] The acrylic pressure-sensitive adhesive was applied on a polyethylene naphthalate film having a thickness of 100 μm at an application amount of 10 g / m 2 to provide an acrylic pressure-sensitive adhesive layer. A non-radiation-curable pressure-sensitive adhesive sheet was prepared by laminating a PET film as a release sheet on the pressure-sensitive adhesive layer.
【００６８】「ポリイミド接着シートの作製」実施例１
と同様に作製した。 「半導体装置の作製」上記のポリイミド接着シートを直
径１５０ｍｍに打ち抜き加工し、６インチウェハを熱圧
着（１４０℃、３０秒）させ、その後、ポリイミド用工
程フィルムを剥離した。先に作製した、ウェハ貼着用粘
着シートでポリイミド系接着剤面とアクリル系粘着剤面
が接するように貼付し、ウェハをリングフレームに固定
した。これを１０ｍｍ×１０ｍｍのチップにダイシング
し、ピックアップ、ボンディング及びＩＣモールドを行
なった。[Preparation of Polyimide Adhesive Sheet] Example 1
It was produced in the same manner as described above. [Preparation of Semiconductor Device] The above-mentioned polyimide adhesive sheet was punched into a diameter of 150 mm, a 6-inch wafer was subjected to thermocompression bonding (140 ° C., 30 seconds), and then the polyimide process film was peeled off. The adhesive sheet for attaching a wafer, which was prepared earlier, was attached so that the polyimide adhesive face and the acrylic adhesive face were in contact with each other, and the wafer was fixed to a ring frame. This was diced into a 10 mm × 10 mm chip, and pickup, bonding, and IC molding were performed.
【００６９】次いで、実施例１と同様に評価を行なっ
た。その結果を表１に示す。Next, evaluation was performed in the same manner as in Example 1. Table 1 shows the results.
【００７０】[0070]
【比較例２】 「粘着剤の調製」ヒドロキシエチルアクリレートとブチ
ルアクリレートとメチルメタクリレートとの共重合体
（ヒドロキシエチルアクリレート含量＝３０重量％、ブ
チルアクリレート含量＝６０重量％）１００重量部と、
芳香族イソシアナート（東洋インキ製造（株）製）１０
重量部とを混合して非放射線硬化型の粘着剤を調製し
た。Comparative Example 2 "Preparation of adhesive" 100 parts by weight of a copolymer of hydroxyethyl acrylate, butyl acrylate and methyl methacrylate (hydroxyethyl acrylate content = 30% by weight, butyl acrylate content = 60% by weight),
Aromatic isocyanate (Toyo Ink Mfg. Co., Ltd.) 10
The mixture was mixed with parts by weight to prepare a non-radiation-curable pressure-sensitive adhesive.
【００７１】それ以外は比較例１と同様の操作を行なっ
た。結果を表１に示す。Otherwise, the same operation as in Comparative Example 1 was performed. Table 1 shows the results.
【００７２】[0072]
【表１】 [Table 1]
【図１】 図１は、本発明に係るウェハ貼着用シートの
断面図を示す。FIG. 1 is a cross-sectional view of a wafer sticking sheet according to the present invention.
【図２】 図２は、本発明のウェハ貼着用シートの製造
プロセスの一工程を示す。FIG. 2 shows one step of the manufacturing process of the wafer sticking sheet of the present invention.
【図３】 図３は、ウェハ貼着用シートをリングフレー
ムで固定した状態を示す。FIG. 3 shows a state in which the wafer sticking sheet is fixed by a ring frame.
【図４】 図４は、半導体ウェハをダイシングしている
状態を示す。FIG. 4 shows a state in which a semiconductor wafer is being diced.
【図５】 図５は、ウェハ貼着用シートをエキスパンド
し、ＩＣチップをピックアップしている状態を示す。FIG. 5 shows a state in which the wafer attaching sheet is expanded and IC chips are picked up.
【図６】 図６は、ポリイミド接着シートに半導体ウェ
ハを熱圧着している状態を示す。FIG. 6 shows a state where a semiconductor wafer is thermocompression-bonded to a polyimide adhesive sheet.
１…基材フィルム ２…放射線硬化型粘着剤層 ３…粘着シート ４…ポリイミド系接着剤層 ５…ポリイミド用工程フィルム ６…リングフレーム ７…半導体ウェハ ８…ポリイミド接着シート １０…ウェハ貼着用シート DESCRIPTION OF SYMBOLS 1 ... Base film 2 ... Radiation-curable adhesive layer 3 ... Adhesive sheet 4 ... Polyimide adhesive layer 5 ... Process film for polyimide 6 ... Ring frame 7 ... Semiconductor wafer 8 ... Polyimide adhesive sheet 10 ... Wafer bonding sheet
───────────────────────────────────────────────────── フロントページの続き (72)発明者 雨 海 正 純 大分県速見郡日出町大字川崎字高尾4260 日本テキサス・インスツルメンツ株式会社 日出工場内 (72)発明者 山 崎 修 埼玉県浦和市辻７−７−３ (72)発明者 江 部 和 義 埼玉県南埼玉郡白岡町下野田1375−19 ──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Masazumi Ami Umi 4260 Takao, Kawasaki, Hiji-cho, Hami-gun, Oita Prefecture Inside the Hiji Plant of Texas Instruments Japan Limited (72) Inventor Osamu Yamazaki Tsuji, Urawa-shi, Saitama 7-7-3 (72) Inventor Kazuyoshi Ebe 1375-19 Shimonoda, Shiraoka-machi, Minamisaitama-gun, Saitama
Claims (7)
形成された放射線硬化型粘着剤層と、該放射線硬化型粘
着剤層上に形成されたポリイミド系接着剤層とから構成
されることを特徴とするウェハ貼着用シート。1. A method comprising: a base film; a radiation-curable pressure-sensitive adhesive layer formed on the base film; and a polyimide-based adhesive layer formed on the radiation-curable pressure-sensitive adhesive layer. A wafer sticking sheet characterized by the above-mentioned.
後における弾性率が１×１０9 dyn/cm2 以上であること
を特徴とする請求項１に記載のウェハ貼着用シート。2. The wafer sticking sheet according to claim 1, wherein the radiation-curable pressure-sensitive adhesive layer has an elastic modulus after irradiation of 1 × 10 9 dyn / cm 2 or more.
イシング用のリングフレームに支持可能な面積を有し、
かつ、前記ポリイミド系接着剤層の外径が、ウェハダイ
シング用のリングフレームの内径よりも小さいことを特
徴とする請求項１または２に記載のウェハ貼着用シー
ト。3. The radiation-curable pressure-sensitive adhesive layer has an area that can be supported by a ring frame for wafer dicing.
3. The wafer sticking sheet according to claim 1, wherein an outer diameter of the polyimide-based adhesive layer is smaller than an inner diameter of a ring frame for wafer dicing.
形成された放射線硬化型粘着剤層と、該放射線硬化型粘
着剤層上に形成されたポリイミド系接着剤層とから構成
されるウェハ貼着用シートのポリイミド系接着剤層に、
半導体ウェハを熱圧着し、 前記半導体ウェハをダイシングしてＩＣチップとし、 前記放射線硬化型粘着剤層に放射線を照射して放射線硬
化型粘着剤層を硬化させ、 前記ＩＣチップ裏面に前記ポリイミド系接着剤層を固着
残存させて放射線硬化型粘着剤層から剥離する工程を含
む半導体装置の製造方法。4. A wafer comprising a base film, a radiation-curable pressure-sensitive adhesive layer formed on the base film, and a polyimide-based adhesive layer formed on the radiation-curable pressure-sensitive adhesive layer. In the polyimide adhesive layer of the sticking sheet,
A semiconductor wafer is thermocompressed, and the semiconductor wafer is diced into IC chips. The radiation-curable pressure-sensitive adhesive layer is irradiated with radiation to cure the radiation-curable pressure-sensitive adhesive layer. A method of manufacturing a semiconductor device, comprising a step of fixing and leaving an agent layer and peeling off the radiation-curable pressure-sensitive adhesive layer.
イミド用工程フィルム上に形成されたポリイミド系接着
剤層とからなるポリイミド接着シートの前記ポリイミド
系接着剤層に、半導体ウェハを熱圧着した後、該ポリイ
ミド用工程フィルムを剥離し、 基材フィルムと、前記基材フィルム上に形成された放射
線硬化型粘着剤層とからなる粘着シートの前記放射線硬
化型粘着剤層を、前記ポリイミド系接着剤層が熱圧着さ
れた半導体ウェハのポリイミド系接着剤層面に貼着し、 前記半導体ウェハをダイシングしてＩＣチップとし、 前記放射線硬化型粘着剤層に放射線を照射して放射線硬
化型粘着剤層を硬化させ、 前記ＩＣチップ裏面に前記ポリイミド系接着剤層を固着
残存させて放射線硬化型粘着剤層から剥離する工程を含
む半導体装置の製造方法。5. A semiconductor wafer is thermocompression-bonded to the polyimide adhesive layer of a polyimide adhesive sheet comprising a polyimide process film and a polyimide adhesive layer formed on the polyimide process film. The polyimide film is peeled off, and the radiation-curable pressure-sensitive adhesive layer of the pressure-sensitive adhesive sheet comprising a substrate film and a radiation-curable pressure-sensitive adhesive layer formed on the substrate film, wherein the polyimide-based adhesive layer is Affixed to the polyimide-based adhesive layer surface of the thermocompression-bonded semiconductor wafer, dicing the semiconductor wafer into IC chips, and irradiating the radiation-curable pressure-sensitive adhesive layer with radiation to cure the radiation-curable pressure-sensitive adhesive layer A step of fixing and leaving the polyimide adhesive layer on the back surface of the IC chip and peeling off the radiation-curable pressure-sensitive adhesive layer. Production method.
後における弾性率が１×１０9 dyn/cm2 以上であること
を特徴とする請求項４または５に記載の半導体装置の製
造方法。6. The method according to claim 4, wherein the radiation-curable pressure-sensitive adhesive layer has an elastic modulus of 1 × 10 9 dyn / cm 2 or more after irradiation.
イシング用のリングフレームに支持可能な面積を有し、
かつ、前記ポリイミド系接着剤層の外径が、ウェハダイ
シング用のリングフレームの内径よりも小さいことを特
徴とする請求項４または５に記載の半導体装置の製造方
法。7. The radiation-curable pressure-sensitive adhesive layer has an area that can be supported on a ring frame for wafer dicing,
The method according to claim 4, wherein an outer diameter of the polyimide-based adhesive layer is smaller than an inner diameter of a ring frame for wafer dicing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9144240A JPH10335271A (en) | 1997-06-02 | 1997-06-02 | Wafer pasting sheet and manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9144240A JPH10335271A (en) | 1997-06-02 | 1997-06-02 | Wafer pasting sheet and manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH10335271A true JPH10335271A (en) | 1998-12-18 |
Family
ID=15357511
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9144240A Withdrawn JPH10335271A (en) | 1997-06-02 | 1997-06-02 | Wafer pasting sheet and manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH10335271A (en) |
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