JP2005276971A - Adhesive film for semiconductor with dicing sheet function, manufacturing method of semiconductor device using the same, and semiconductor device using the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an adhesive film for a semiconductor with a dicing sheet function, wherein an adhesive-bond layer is laminated only to a wafer attachment intended portion. <P>SOLUTION: The adhesion film for the semiconductor with a dicing sheet function is constituted in such a way that an adhesive layer 4 may be formed on a base film 5, a film-like adhesive layer 3 may be formed on it, and the outer diameter of the adhesive layer 3 may be larger than the outer diameter of the attachment intended portion of the wafer 1 and smaller than the inner diameter of the wafer ring attachment intended portion. It is preferable that the glass transition temperature of the resin composition consisting of the adhesive layer 3 exists between -30°C or more and 60°C or less. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to an adhesive film for a semiconductor with a dicing sheet function, a method for manufacturing a semiconductor device using the same, and a semiconductor device.

  In response to the recent increase in functionality of electronic devices and expansion to mobile applications, there is an increasing demand for higher density and higher integration of semiconductor devices, and IC packages are increasing in capacity and density. As a manufacturing method of these semiconductor devices, an adhesive sheet is attached to a semiconductor wafer made of silicon, gallium, arsenic, etc., and after cutting and separating into individual semiconductor elements by dicing, expanding, picking up individual chips, Next, the semiconductor chip is transferred to an assembly process of a semiconductor device in which a semiconductor chip is die-bonded to a metal lead frame, a tape substrate, or an organic hard substrate.

  The picked-up semiconductor chip is bonded to a lead frame or a substrate through a die attach material such as a liquid epoxy adhesive in a die bonding process, and a semiconductor device is manufactured. However, wafers are becoming thinner due to the need to stack chips in multiple stages, but in the case of resin paste, which is a conventional die bonding material, it is difficult to apply an appropriate amount of adhesive, and adhesive sticks out of the chip. Further, there is a problem that reliability at the time of incorporation in the package is lowered due to warpage of the chip after curing. Also, the adhesive application process is complicated, and improvements and improvements are required in order to simplify the process.

  In order to solve this problem, it has been proposed to use a film adhesive as a die attach material instead of a liquid die attach material, and some of them have already been used (for example, see Patent Documents 1 and 2). . In addition, dicing sheet and die bonding sheet integrated type are also used in part due to the shortening of the process, but the adhesive layer in the part to be attached to the wafer and the adhesive layer in the part to be attached in the wafer ring are required for the adhesive layer. Therefore, an efficient configuration is required.

JP 2002-353252 A (all pages) JP 2002-294177 A (all pages)

  The object of the present invention is to function as a dicing sheet having excellent chipping resistance and cracking characteristics, and can be used as an adhesive during die mounting. The adhesive layer has excellent thickness uniformity, adhesive strength, and shear strength characteristics, and an adhesive layer with excellent reflow resistance that can withstand harsh heat and humidity conditions. The present invention provides a semiconductor adhesive film with a dicing sheet function, a method of manufacturing a semiconductor device using the same, and a semiconductor device.

The present invention
(1) An adhesive film for a semiconductor in which a base film, an adhesive layer, and a film-like adhesive layer are formed in this order, and the outer diameter of the film-like adhesive layer is the outer diameter of the portion to be attached to the wafer An adhesive film for a semiconductor with a dicing sheet function, wherein the adhesive film is larger than an inner diameter of a portion to be bonded to a wafer ring.
(2) The adhesive film for a semiconductor with a dicing sheet function according to (1), wherein the resin composition constituting the film adhesive layer has a glass transition temperature of −30 ° C. or more and 60 ° C. or less.
(3) Item (1) or (2), wherein the resin composition constituting the film-like adhesive layer comprises an acrylic acid copolymer having a glass transition temperature of -30 ° C to 60 ° C and an epoxy resin. The adhesive film for semiconductors with a dicing sheet function of description.
(4) The adhesive film for a semiconductor with a dicing sheet function according to the item (3), wherein the acrylic acid copolymer has a molecular weight of 100,000 or more.
(5) The adhesive film for a semiconductor with a dicing sheet function according to (3) or (4), wherein the acrylic acid copolymer is an acrylic acid copolymer containing a nitrile group.
(6) The adhesive film for a semiconductor with a dicing sheet function according to any one of (1) to (5), wherein the pressure-sensitive adhesive layer comprises an acrylic acid copolymer and a photopolymerization initiator.
(7) The adhesive film for a semiconductor with a dicing sheet function according to any one of (1) to (6), wherein the base film is a light-transmitting base material.
(8) A step of bonding the back surface of the silicon wafer to the film adhesive layer portion of the adhesive film for a semiconductor with a dicing sheet function described in (A) (1) at 80 ° C. or lower,
(B) A process of attaching the wafer ring to the adhesive layer formed on the base film,
(C) a step of dicing the silicon wafer and separating it into individual dies;
(D) A step of curing the pressure-sensitive adhesive layer by irradiating the base film surface with ultraviolet light after dicing,
(E) After picking up the pressure-sensitive adhesive layer with UV rays, the die having the adhesive layer remaining on the back surface is peeled off and removed from the pressure-sensitive adhesive layer; A method of manufacturing a semiconductor device, comprising a step of heat-bonding with an adhesive.
(9) A semiconductor device formed by bonding a semiconductor element and a lead frame or a substrate with the semiconductor adhesive film according to any one of (1) to (7).

  According to the present invention, it has excellent thickness uniformity, adhesive strength, and shear strength properties, and functions as a dicing sheet that is excellent in chipping resistance and crack properties as a dicing film when dicing when a wafer is pasted at 80 ° C. or less. It is possible to prevent contamination by the adhesive of the ring frame by providing a separate adhesive layer on the wafer attaching part and the wafer ring attaching part. The used semiconductor device has impact resistance and heat resistance equal to or higher than those of conventional liquid epoxy die attach materials.

Hereinafter, the adhesive film for semiconductor, the dicing film and the semiconductor device of the present invention will be described.
The adhesive film for a semiconductor with a dicing sheet function of the present invention has a pressure-sensitive adhesive layer formed on a base film, a film-like adhesive layer is formed thereon, and the outer diameter of the film-like adhesive layer is that of the wafer. It is characterized by being larger than the outer diameter of the part to be pasted and smaller than the inner diameter of the part to be pasted with the wafer ring.

When the outer diameter of the film-like adhesive layer is larger than the part to be attached to the wafer, the film-like adhesive is attached to the entire surface of the wafer and smaller than the inner diameter of the part to be attached to the wafer ring, so that the wafer ring and the film-like adhesive are attached. It can prevent sticking.
When the wafer ring and the film adhesive come into contact with each other, there is a possibility that the film adhesive adheres to the wafer ring and the wafer ring is contaminated.

  It is preferable that the glass transition temperature of the resin composition which comprises the film adhesive of this invention is -30 degreeC or more and 60 degrees C or less. When the glass transition temperature exceeds 60 ° C., the sticking property at 60 ° C. or less becomes difficult, and when it falls below −30 ° C., the tack property is too strong and the handling property is deteriorated.

  The resin composition constituting the film adhesive of the present invention is not particularly limited. For example, epoxy resin, polyimide resin, cyanate resin, isocyanate resin, urethane resin, maleimide resin, phenol resin, unsaturated polyester resin, Diallyl phthalate resin, cyanamide resin, polybutadiene resin, polyamide resin, polyamideimide resin, polyether resin, polysulfone resin, polyolefin resin, polystyrene resin, polyvinyl chloride resin, trans polyisoprene resin, polyacetal resin, polycarbonate resin, polyphenylene ether resin, Polyphenylene sulfide resin, polyarylate resin, polyetherimide resin, polyethersulfone resin, polyetherketone resin, polybenzimidazole resin, acrylic resin Although Le acid copolymer, and the like, among which acrylic acid copolymer, and preferably contains an epoxy resin.

  As a glass transition temperature of the acrylic acid copolymer used for this invention, -30 degreeC or more and 60 degrees C or less are preferable. When the glass transition temperature is below -30 ° C, tackiness is too strong and handling becomes difficult, and when it exceeds 60 ° C, the sticking property at 60 ° C or less is deteriorated.

  Examples of the acrylic acid copolymer used in the present invention include a copolymer containing at least one of acrylic acid, acrylic acid ester, methacrylic acid ester, and acrylonitrile as a monomer component. Among them, glycidyl methacrylate having a glycidyl ether group, A copolymer containing a hydroxy methacrylate having a hydroxyl group and a carboxy methacrylate having a carboxyl group is preferred.

  The molecular weight of these acrylic acid copolymers is preferably 100,000 or more, and more preferably 150,000 to 1,000,000 from the viewpoint of increasing the cohesive force.

  Moreover, it is preferable that the acrylic acid copolymer used for this invention contains a nitrile group. By containing a nitrile group, there is an effect of improving the adhesion with the adherend.

  The epoxy resin used in the present invention refers to monomers, oligomers and polymers in general. For example, biphenyl type epoxy resin, bisphenol type epoxy resin, stilbene type epoxy resin, orthocresol novolak type epoxy resin, phenol novolac type epoxy resin, triphenolmethane type epoxy resin, alkyl-modified triphenolmethane type epoxy resin, epoxy resin containing triazine nucleus , Dicyclopentadiene-modified phenol type epoxy resin, glycidylamine type epoxy resin, and the like. These may be used alone or in combination.

  Among these epoxy resins, the epoxy resin is not particularly limited as long as it has compatibility with the acrylic acid copolymer, but an epoxy resin having a melting point of 50 to 150 ° C. is preferable, and further, the main chain An epoxy resin having a very rigid structure is more preferable in terms of adhesion and heat resistance. Examples of such epoxy resins include orthocresol novolac type epoxy resins, glycidylamine type epoxy resins, biphenyl type epoxy resins, bisphenol type epoxy resins, and stilbene type epoxy resins.

  The amount of the epoxy resin used in the present invention is preferably 10 to 150 parts by weight, more preferably 30 to 100 parts by weight with respect to 100 parts by weight of the acrylic acid copolymer.

  The resin composition constituting the film adhesive of the present invention may contain an organic compound having a cyanate group. Examples of the organic compound having a cyanate group include bisphenol A dicyanate, bisphenol F dicyanate, bis (4-cyanate phenyl) ether, and bisphenol E dicyanate cyanate novolak resin.

  The resin composition constituting the film adhesive of the present invention may contain a phenol resin. In this case, the phenol resin acts as a curing agent for the epoxy resin.

  As the phenol resin used in the present invention, a polyfunctional phenol compound (commonly referred to as phenol novolak) obtained by condensing a phenol compound having one or two phenolic hydroxyl groups in the molecule with formaldehyde in the presence of an acidic catalyst, bis (4-hydroxy-3,5-dimethylphenyl) methane (commonly known as tetramethylbisphenol F), 4,4′-sulfonyldiphenol, 4,4′-isopropylidenediphenol (commonly referred to as bisphenol A), bis (4- Hydroxyphenyl) methane, bis (2-hydroxyphenyl) methane, (2-hydroxyphenyl) (4-hydroxyphenyl) methane and bis (4-hydroxyphenyl) methane, bis (2-hydroxyphenyl) methane, ( 2-hydroxyphenyl) (4-hydroxy Bis) methane bisphenols (eg, bisphenol FD manufactured by Honshu Chemical Industry Co., Ltd.), 1,2-benzenediol, 1,3-benzenediol, 1,4-benzenediol Dihydroxybenzenes such as 1,2,4-benzenetriol and the like, various isomers of dihydroxynaphthalene such as 1,6-dihydroxynaphthalene, 2,2′-biphenol and 4,4′-biphenol And compounds such as various isomers of biphenols.

  The resin composition constituting the film adhesive of the present invention may contain an ultraviolet curable resin as necessary. Examples of the ultraviolet curable resin include acrylic acid and methacrylic acid ester monomers. Among them, ethylene glycol diacrylate, ethylene glycol dimethacrylate, 1,6-hexanediol diacrylate, 1,6-hexanediol dimethacrylate, glycerol diacrylate, glycerol dimethacrylate, 1,10-decanediol diacrylate, dimethacrylate Bifunctional acrylates such as acid 1,10-decanediol, trimethylolpropane triacrylate, trimethylolpropane trimethacrylate, pentaerythritol triacrylate, pentaerythritol trimethacrylate, dipentaerythritol hexaacrylate, hexamethacrylate diacrylate An acrylic resin such as a polyfunctional acrylate such as pentaerythritol can be used.

  The UV curable resin can be further mixed with a photopolymerization initiator so that the surface of the film-like adhesive layer can be cured and easily peeled by irradiating with UV rays when it is difficult to peel from the adhesive. .

  Specific examples of such photopolymerization initiators include benzophenone, acetophenone, benzoin, benzoin isobutyl ether, methyl benzoin benzoate, benzoin benzoic acid, benzoin methyl ether, benzylfinyl sulfide, benzyl, dibenzyl, and diacetyl. It is done.

  The film adhesive of the present invention may contain a filler, and the average particle size of the filler is preferably 0.1 to 25 μm. When the average particle size is less than 0.1 μm, the effect of filler addition is small, and when it exceeds 25 μm, the adhesive strength as a film may be reduced.

As the filler used in the film adhesive of the present invention, silver, titanium oxide, silica, mica and the like are preferable.
The content of the filler is preferably 0% to 30% by weight, and if it exceeds 30%, the film becomes brittle and adhesiveness decreases.

In the present invention, the resin composition used for the pressure-sensitive adhesive has a sufficient adhesiveness when uncured, includes a component that is cured by irradiating with ultraviolet rays of 370 nm or less, and includes a film-like adhesive and a pressure-sensitive adhesive. It is preferable to have the characteristic of not having adhesiveness at the interface.
The resin composition of the pressure-sensitive adhesive layer in the present invention is preferably made of an acrylic acid copolymer.

  The pressure-sensitive adhesive layer in the present invention preferably contains a photopolymerization initiator. Thereby, by mixing the ultraviolet curable resin, it is possible to eliminate the adhesiveness at the interface between the film adhesive and the pressure sensitive adhesive by irradiating the ultraviolet light of 370 nm or less.

  It is preferable that the glass transition temperature of an adhesive layer is -30 degreeC or more and 60 degrees C or less. If the glass transition temperature exceeds 60 ° C., the sticking property of the wafer ring at 60 ° C. or less becomes difficult, and if it falls below −30 ° C., the tack property is too strong and it becomes difficult to remove the wafer ring.

  Moreover, it is preferable that the base film of this invention consists of a transparent base material.

  Examples of the light transmissive substrate used in the present invention include polypropylene film, polyethylene film, polybutadiene film, polyvinyl chloride film, etc., and 30 to 70 parts by weight, preferably 40 to 60 parts by weight of polypropylene resin and 70. It is preferable that it is a mixture of a polystyrene block and a copolymer composed of a vinyl isoprene block of -30 parts by weight, preferably 60-40 parts by weight.

  The film thickness of the light transmissive substrate used in the present invention is preferably 20 to 200 μm, particularly preferably 25 to 150 μm.

  The method for producing the adhesive film for a semiconductor with a dicing sheet function of the present invention is not particularly limited. First, on the release sheet, the resin composition constituting the film adhesive is varnished, comma coater, die coater, According to a generally known method such as a gravure coater, coating and drying are performed to form an adhesive layer. By laminating another film consisting of a pressure-sensitive adhesive layer and a light-transmitting base material on the one obtained by half-cutting this, a light-transmitting base material, a pressure-sensitive adhesive layer, an adhesive layer and protection A semiconductor adhesive film having a dicing sheet function made of a film can be obtained.

  The thickness of the pressure-sensitive adhesive layer and film adhesive layer thus formed is preferably 3 to 100 μm, and more preferably 10 to 75 μm. If the thickness is less than the lower limit, the effect as an adhesive decreases, and if the thickness exceeds the upper limit, it is difficult to produce a product and the thickness accuracy is deteriorated.

  In the method for producing a semiconductor device of the present invention, first, after being attached to the film adhesive layer side of the semiconductor adhesive film with a dicing sheet function of the present invention on the back surface of a silicon wafer at room temperature or under mild conditions of 80 ° C. or less. After attaching the wafer ring to the adhesive layer, the silicon wafer is fixed on the dicing apparatus via the semiconductor adhesive film with a dicing sheet function of the present invention, and using the cutting means such as a dicing saw, the above-mentioned A silicon wafer with a film adhesive is cut into individual pieces to obtain a semiconductor chip to which the film adhesive is made into individual dies.

Subsequently, the light transmissive substrate surface of the semiconductor adhesive film with a dicing sheet function attached to the semiconductor chip obtained as described above is irradiated with ultraviolet rays (center wavelength = about 365 nm). Usually, the illuminance is set to 20 to 500 mJ / cm ² and the irradiation time is set to a range of 5 to 600 seconds. Various conditions can be set according to the case of the above-mentioned ultraviolet irradiation.
Next, the film-like adhesive is peeled off at the interface between the pressure-sensitive adhesive layer and the film-like adhesive layer while the film-like adhesive remains fixed on the back surface of the semiconductor chip.

Thus, die bonding can be performed by heating and pressure-bonding the semiconductor chip to which the film adhesive is fixed to a metal lead frame or substrate as it is. The heating and pressure bonding conditions are usually a heating temperature of 100 to 300 ° C. and a pressure bonding time of 0.1 to 10 seconds, preferably a heating of 100 to 200 ° C. and a pressure bonding time of 1 to 5 seconds. Subsequently, by heating, the epoxy resin in the film adhesive is cured, and a semiconductor device in which the semiconductor chip and the lead frame, the substrate, and the like are firmly bonded can be obtained. The heating temperature in this case is usually about 100 to 300 ° C., preferably about 120 to 200 ° C., and the heating time is usually 1 to 240 minutes, preferably 10 to 60 minutes.
The finally cured film adhesive has high heat resistance, and the cured product has low brittleness due to the acrylic rubber resin component, and has excellent shear strength, high impact resistance, and heat resistance.

  EXAMPLES Hereinafter, although this invention is demonstrated in detail based on an Example and a comparative example, this invention is not limited to this.

Examples of the present invention will be described below, but the present invention is not limited to these examples.
I) Adhesive layer component (A) Thermoplastic resin component (A-1) Epoxy group-containing acrylic acid copolymer (manufactured by Nagase ChemteX Corporation, trade name: SG80HDR, Tg: 10 ° C., molecular weight Mw = 350,000)
(A-2) Epoxy group-containing acrylic acid copolymer (manufactured by Nagase ChemteX Corporation, trade name: SGP3DR, Tg: 12 ° C., molecular weight Mw = 850000)
(A-3) Silicone-modified polyimide resin, specifically, as a diamine component, 2,2-bis [4- (4-aminophenoxy) phenyl] propane (0.15 mol) and α, ω-bis (3-amino) Propyl) polydimethylsiloxane (average molecular weight 837) (0.15 mol) and an anisole-soluble polyimide resin using 4,4′-oxydiphthalic dianhydride (0.30 mol) as an acid component Obtained. The molecular weight is Mw = 60000.
(A-4) Polyamide resin (manufactured by Henkel Japan, trade name: Micromelt 6239)

(B) Epoxy resin component (B-1) Cresol novolak epoxy resin (trade name: EOCN-1020-80, epoxy equivalent: 200 g / eq, manufacturer: Nippon Kayaku Co., Ltd.)
(B-2) Bisphenol A type epoxy resin (trade name: N-865, epoxy equivalent: 190 g / eq, manufacturer: Dainippon Ink & Chemicals, Inc.)

(C) Epoxy curing agent component (C-1) Phenol novolak resin (trade name: PR53647, hydroxyl group equivalent 104, manufacturer: Sumitomo Bakelite Co., Ltd.)

(D) Imidazole (D-1) Imidazole compound (trade name: 1B2MZ, manufacturer: Shikoku Chemicals)

II) Adhesive layer component (E) Acrylic acid copolymer component (E-1) Acrylic acid copolymer (manufactured by Syden Chemical Co., Ltd., trade name: Cybinol MS-105)

(F) Photo-curable resin (F-1) Diabeam UR-9400 (Manufacturer: Mitsubishi Rayon Co., Ltd.)

(G) Isocyanate resin (G-1) Coronate L (Manufacturer: Nippon Polyurethane Industry Co., Ltd.)

(H) Photopolymerization initiator (H-1) 2,2-dimethoxyx-1,2-diphenylethane-1-one (manufacturer: Ciba-Gigi Co., Ltd.)

Light transmissive substrate A Hi-Bra 60 parts by weight Cleartec CT-H817 (made by Kuraray) consisting of 40 parts by weight of polypropylene was used to form a film having a thickness of 100 μm using an extruder.

Example 1
Each component was prepared at the ratio shown in Table 1 to obtain a resin composition (adhesive layer). After applying this resin composition to a polyethylene terephthalate film (manufactured by Oji Paper Co., Ltd., product number RL-07, thickness 38 μm), it was dried at 70 ° C. for 10 minutes to obtain a 25 μm thick adhesive film for semiconductor with a carrier film. Obtained. This adhesive film for semiconductor was half cut into a circle larger than the outer diameter of the wafer used and smaller than the inner diameter of the wafer ring.
On the other hand, each component was prepared at the ratio shown in Table 2 to obtain a resin composition (adhesive layer). By applying this resin composition to a polyethylene terephthalate film (manufactured by Oji Paper Co., Ltd., product number RL-07, thickness 38 μm), drying at 70 ° C. for 10 minutes, and laminating the light transmissive substrate together, A sheet (II) composed of a protective film (polyethylene terephthalate substrate), an adhesive layer, and a light-transmitting substrate was obtained.
Next, the protective film (polyethylene terephthalate base material) is peeled from the sheet (II), and the protective film (polyethylene terephthalate base material) is laminated on the adhesive layer surface of the adhesive film for semiconductor with a thickness of 25 μm with a half-cut carrier film. ), An adhesive film for a semiconductor with a dicing sheet function comprising an adhesive layer, a pressure-sensitive adhesive layer, and a light-transmitting substrate was produced.

After the protective film of the adhesive film for semiconductor is peeled off, a semiconductor wafer is attached to the adhesive surface, a wafer ring is attached to the pressure-sensitive adhesive layer and fixed and held, and a dicing saw is used to rotate the spindle at 30,000 rpm and cutting speed. It was cut into a chip size of 5 × 5 mm square at 50 mm / sec. Next, after irradiating UV light with an integrated light amount of 250 mJ / cm ² in 20 seconds, the light-transmitting substrate is peeled off from the semiconductor chip to which the semiconductor adhesive film is adhered, and then the semiconductor chip is interposed through the semiconductor adhesive film. , 42-alloy alloy lead frame was pressure-bonded under conditions of 130 ° C.-1 MPa-1.0 sec, die-bonded, and each item as a dicing sheet and semiconductor adhesive film was evaluated. The results are shown in Tables 3 and 4.

<< Examples 2 to 7 >>
The same operation as in Example 1 was performed except that the blending ratio of the adhesive component was changed as shown in Table 1, and the blending ratio of the adhesive component was changed as shown in Table 2.

<< Comparative Example 1 >>
Each component was prepared at the ratio shown in Table 1 to obtain a resin composition. This resin composition was applied to a polyethylene terephthalate substrate 100 μm and dried to obtain a film adhesive. An adhesive film for a semiconductor with a dicing sheet function comprising a protective film (polyethylene terephthalate base material), a film-like adhesive, and a light-transmitting base material by laminating a light-transmitting base material on the film-like adhesive. Produced. The adhesive layers of the wafer ring attaching portion and the wafer attaching portion are the same resin composition.

The following evaluation methods were used for evaluation of Examples and Comparative Examples.
(1) Glass transition temperature Relaxation peak when dynamic viscoelasticity of a film adhesive is measured at a temperature rising rate of 3 ° C./min and a frequency of 10 Hz using a dynamic viscoelastic device manufactured by Seiko Instruments Inc.

(2) Scattering of chips after dicing After dicing a semiconductor wafer, evaluation was performed by measuring the number of semiconductor chips peeled off from the adhesive film for a semiconductor due to weak adhesion.

(3) Pickup property It was evaluated whether a semiconductor chip with an adhesive film for a semiconductor could be picked up from a light-transmitting substrate (pickup) by irradiating with ultraviolet rays after dicing the semiconductor wafer.
○: Almost all chips can be picked up △: 50-90% of diced chips can be picked up ×: Pick-up is 50% or less

(4) Chipping characteristics ○: The chip has a maximum width of 30 μm or less.
(Triangle | delta): The width | variety of a chip | tip hook is 30-50 micrometers at maximum.
×: The width of the chip is 50 μm or more at maximum.

(5) Contamination of wafer ring In Examples 1 and 2, the transfer of the adhesive to the wafer ring was visually evaluated when the wafer ring was affixed to the adhesive layer and the adhesive layer in the comparative example was removed after standing for one week. The evaluation was ○ if the wafer ring was not contaminated and × if it was contaminated.

(6) Initial adhesiveness of adhesive film The adhesiveness between the adhesive film for a semiconductor and the lead frame is as follows: a semiconductor element bonded with a dicing film and a lead frame of 42-alloy alloy at 130 ° C., 1 MPa, for 1.0 second. Bonding was performed under conditions, and the shear strength between the chip and the lead frame was evaluated in an untreated state (before curing).
A: Shear strength is 1.0 MPa or more. O: Shear strength is 0.75 or more and less than 1.0 MPa. Δ: Shear strength is 0.5 or more and less than 0.75 MPa. Shear strength is less than 0.5 MPa

(7) Adhesiveness after moisture absorption treatment The semiconductor devices obtained in the respective examples and comparative examples were subjected to moisture absorption treatment at 85 ° C./85% RH / 168 hours, and then the shear strength between the semiconductor element and the lead frame was evaluated.
A: Shear strength is 1.0 MPa or more. O: Shear strength is 0.75 or more and less than 1.0 MPa. Δ: Shear strength is 0.5 or more and less than 0.75 MPa. Shear strength is less than 0.5 MPa

The dicing sheet of Comparative Example 1 was inferior to wafer ring contamination. On the other hand, as is clear from Table 4, the dicing sheets of Examples 1 to 7 were excellent in all of pickup properties, chipping properties, and wafer ring contamination.
Moreover, the adhesive films for semiconductors of Examples 1 to 5 were extremely excellent in initial adhesiveness. Furthermore, the adhesive films for semiconductors of Examples 1 and 2 were extremely excellent in adhesiveness after moisture absorption.

According to the present invention, it has excellent thickness uniformity, adhesive strength, and shear strength properties, and functions as a dicing sheet that is excellent in chipping resistance and crack properties as a dicing film when dicing when a wafer is pasted at 80 ° C. or less. Can be obtained.
Further, according to the present invention, contamination by the ring frame adhesive can be prevented by providing another adhesive layer on the wafer attaching portion and the wafer ring attaching portion, and a semiconductor using the same. The apparatus has impact resistance and heat resistance equivalent to or higher than conventional liquid epoxy semiconductor adhesives.

It is a top view which shows an example of the adhesive film for semiconductors with a dicing sheet function of this invention. It is sectional drawing of the A-A 'part of FIG.

Explanation of symbols

1 wafer 2 wafer ring 3 adhesive layer 4 adhesive layer 5 substrate film

Claims (9)

An adhesive film for a semiconductor comprising a base film, a pressure-sensitive adhesive layer, and a film-like adhesive layer in this order, wherein the outer diameter of the film-like adhesive layer is larger than the outer diameter of the portion to be attached to the wafer. An adhesive film for a semiconductor with a dicing sheet function, wherein the adhesive film is smaller than an inner diameter of a portion to be attached to a ring. The adhesive film for a semiconductor with a dicing sheet function according to claim 1, wherein the glass transition temperature of the resin composition constituting the film adhesive layer is -30 ° C or higher and 60 ° C or lower. The dicing sheet function-provided according to claim 1 or 2, wherein the resin composition constituting the film adhesive layer comprises an acrylic acid copolymer having a glass transition temperature of -30 ° C to 60 ° C and an epoxy resin. Adhesive film for semiconductors. The adhesive film for a semiconductor with a dicing sheet function according to claim 3, wherein the molecular weight of the acrylic acid copolymer is 100,000 or more. The adhesive film for a semiconductor with a dicing sheet function according to claim 3 or 4, wherein the acrylic acid copolymer is an acrylic acid copolymer containing a nitrile group. The adhesive film for a semiconductor with a dicing sheet function according to any one of claims 1 to 5, wherein the pressure-sensitive adhesive layer comprises an acrylic acid copolymer and a photopolymerization initiator. The adhesive film for a semiconductor with a dicing sheet function according to claim 1, wherein the base film is made of a light-transmitting base material. (A) The process of bonding a silicon wafer back surface to the film adhesive layer part of the adhesive film for semiconductors with a dicing sheet function of Claim 1 at 80 degrees C or less,
(B) A process of attaching a wafer ring to the pressure-sensitive adhesive layer formed on the base film,
(C) a step of dicing the silicon wafer and separating it into individual dies,
(D) A step of curing the pressure-sensitive adhesive layer by irradiating the base film surface with ultraviolet light after dicing,
(E) After the adhesive layer is UV-cured, a pick-up step in which the die with the film adhesive layer remaining on the back surface is peeled off and removed from the adhesive layer, and (F) the die is attached to a lead frame or substrate. A method of manufacturing a semiconductor device comprising a step of heat-bonding through a film adhesive layer. A semiconductor device formed by bonding a semiconductor element and a lead frame or a substrate with the semiconductor adhesive film according to claim 1.

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