JP2006054437A - Die attach film with dicing sheet function, manufacturing method of semiconductor device using the same and semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device using a die attach film with a dicing sheet function in which an adhesive layer is laminated only on a part planned for wafer bonding, and to provide the semiconductor device. <P>SOLUTION: In the die attach film with the dicing sheet function, an adhesive layer is formed on a substrate film 6, and a substrate film 4 is formed. A film-like adhesive layer is formed on it. Outer diameters of the substrate film 4 and the adhesive layer are larger than the outer diameter of the part for wafer bonding and are smaller than the inner diameter of a part for wafer ring bonding. It is desirable that a glass transition temperature of a resin composite which constitutes the adhesives layer is -30°C to 60°C. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

The present invention relates to a film adhesive for die bonding, a method for manufacturing a semiconductor device using the same, and a semiconductor device.

In response to the recent increase in functionality of electronic devices and expansion to mobile applications, there is an increasing demand for higher density and higher integration of semiconductor devices, and IC packages are increasing in capacity and density. As a manufacturing method of these semiconductor devices, an adhesive sheet is attached to a semiconductor wafer made of silicon, gallium, arsenic, etc., and after cutting and separating into individual semiconductor elements by dicing, expanding, picking up individual chips, Next, the semiconductor chip is transferred to an assembly process of a semiconductor device in which a semiconductor chip is die-bonded to a metal lead frame, a tape substrate, or an organic hard substrate.

The picked-up semiconductor chip is bonded to a lead frame or a substrate through a die attach material such as a liquid epoxy adhesive in a die bonding process, and a semiconductor device is manufactured. However, wafers are becoming thinner due to the need to stack chips in multiple stages, but in the case of resin paste, which is a conventional die bonding material, it is difficult to apply an appropriate amount of adhesive, and adhesive sticks out of the chip. Further, there is a problem that reliability at the time of incorporation in the package is lowered due to warpage of the chip after curing. Also, the adhesive application process is complicated, and improvements and improvements are required in order to simplify the process.

In order to solve this problem, it has been proposed to use a film adhesive as a die attach material instead of a liquid die attach material, and some of them have already been used (for example, see Patent Documents 1 and 2). . In addition, dicing sheet and die bonding sheet integrated type are also used in part due to the shortening of the process, but the adhesive layer in the part to be attached to the wafer and the adhesive layer in the part to be attached in the wafer ring are required for the adhesive layer. Therefore, an efficient configuration is required.
JP 2002-353252 A JP 2002-294177 A

The object of the present invention is to function as a dicing sheet having excellent chipping resistance and cracking characteristics, and can be used as an adhesive during die mounting. The adhesive layer has excellent thickness uniformity, adhesive strength, and shear strength characteristics, and an adhesive layer with excellent reflow resistance that can withstand harsh heat and humidity conditions. A die attach film with a dicing sheet function, a semiconductor device manufacturing method using the die attach film, and a semiconductor device.

The present invention
(1) A die attach film comprising a base film (I), a pressure-sensitive adhesive layer, a base film (II) and a film-like adhesive layer in this order, wherein the base film (II) and the adhesive layer A die attach film with a dicing sheet function, characterized in that the outer diameter of the wafer is larger than the outer diameter of the wafer pasting portion and smaller than the inner diameter of the wafer ring pasting portion,
(2) The glass transition temperature of the resin composition constituting the film adhesive layer is −30 ° C.
The die attach film with a dicing function according to item (1), which is 60 ° C. or lower,
(3) The resin composition constituting the film adhesive has a glass transition temperature of −30 ° C.
It comprises an acrylic acid copolymer that is 60 ° C. or lower and an epoxy resin (1
) Or a die attach film with a dicing function according to item (2),
(4) The die attach film with a dicing function according to (2) or (3), wherein the acrylic acid copolymer has a molecular weight of 100,000 or more,
(5) The die attach film with a dicing function according to (2), (3) or (4), wherein the acrylic acid copolymer is an acrylic acid copolymer containing a nitrile group,
(6) Any one of (1) to (5), wherein the pressure-sensitive adhesive layer is made of an acrylic acid copolymer.
A die attach film with a dicing sheet function according to the item,
(7) The base film (I) and the base film (II) are made of a light transmissive base (
A die attach film with a dicing sheet function according to any one of 1) to (6),
(8) A step of bonding the back surface of the silicon wafer to the adhesive layer portion of the die attach film with a dicing sheet function described in (A) (1) at 60 ° C. or lower,
(B) A step of attaching a wafer ring to the pressure-sensitive adhesive layer formed on the base film (I),
(C) a step of dicing the silicon wafer and separating it into individual dies,
(D) A step of curing the contact interface between the adhesive layer and the base film (II) by irradiating the die attach film surface with ultraviolet rays after dicing,
(E) a pick-up step in which the die having the adhesive layer remaining on the back surface is peeled off from the base film (II) after the adhesive layer is UV-cured;
(F) a method of manufacturing a semiconductor device comprising the step of heat-bonding the die to a lead frame or a substrate via an adhesive,
(9) A semiconductor device obtained by bonding a semiconductor element and a lead frame or a substrate with the film-like adhesive for die bonding described in any one of (1) to (8).

According to the present invention, it has excellent thickness uniformity, adhesive strength, and shear strength characteristics, and functions as a dicing sheet that is excellent in chipping resistance and crack characteristics as a dicing film when a wafer is pasted at a temperature of 60 ° C. or less. It is possible to prevent contamination by the adhesive of the ring frame by providing a separate adhesive layer on the wafer attaching part and the wafer ring attaching part. The used semiconductor device has impact resistance and heat resistance equal to or higher than those of conventional liquid epoxy die attach materials.

The die attach film with a dicing sheet function of the present invention is a base film (
I) A pressure-sensitive adhesive layer is formed on the base film (II), an adhesive layer is formed on the base film (II) and the outer diameter of the adhesive layer is to be attached to the wafer It is characterized by being larger than the outer diameter of the portion and smaller than the inner diameter of the portion to be attached with the wafer ring.

Since the outer diameter of the adhesive layer on the base film (II) is larger than the part to be attached to the wafer, the film adhesive is attached to the entire surface of the wafer and smaller than the inner diameter of the part to be attached to the wafer ring. It is possible to prevent the film adhesive from sticking.

When the wafer ring and the film adhesive come into contact with each other, there is a possibility that the film adhesive adheres to the wafer ring and the wafer ring is contaminated.

The glass transition temperature of the resin composition constituting the adhesive of the present invention is −30 ° C. or higher and 60 ° C.
The following is preferable. When the glass transition temperature exceeds 60 ° C., the sticking property at 60 ° C. or less becomes difficult, and when it falls below −30 ° C., the tack property is too strong and the handling property is deteriorated.

The resin composition constituting the film adhesive of the present invention has a glass transition temperature of −30.
It is preferable to contain an acrylic acid copolymer and an epoxy resin that are at or above 60 ° C. and below.

As a glass transition temperature of the acrylic acid copolymer used for this invention, -30 degreeC or more and 60 degrees C or less are preferable. When the glass transition temperature is below -30 ° C, tackiness is too strong and handling becomes difficult, and when it exceeds 60 ° C, the sticking property at 60 ° C or less is deteriorated.

Examples of the acrylic acid copolymer used in the present invention include a copolymer containing at least one of acrylic acid, acrylic acid ester, methacrylic acid ester, and acrylonitrile as a monomer component. Among them, glycidyl methacrylate having a glycidyl ether group, A copolymer containing a hydroxy methacrylate having a hydroxyl group and a carboxy methacrylate having a carboxyl group is preferred.

The molecular weight of these acrylic acid copolymers is preferably 100,000 or more, and more preferably 150,000 to 1,000,000 from the viewpoint of increasing the cohesive force.

Moreover, it is preferable that the acrylic acid copolymer used for this invention contains a nitrile group. By containing a nitrile group, there is an effect of improving the adhesion with the adherend.

The epoxy resin used in the present invention refers to monomers, oligomers and polymers in general. For example, biphenyl type epoxy resin, bisphenol type epoxy resin, stilbene type epoxy resin, orthocresol novolak type epoxy resin, phenol novolac type epoxy resin, triphenolmethane type epoxy resin, alkyl-modified triphenolmethane type epoxy resin, epoxy resin containing triazine nucleus And dicyclopentadiene-modified phenol type epoxy resin, and the like. These may be used alone or in combination.

Among these epoxy resins, crystalline epoxy resins having a melting point of 50 to 150 ° C. are preferable. Such a crystalline epoxy resin has a rigid structure such as a biphenyl skeleton, a bisphenol skeleton, and a stilbene skeleton in the main chain, and exhibits a crystallinity because of its relatively low molecular weight. A crystalline epoxy resin is a solid crystallized at room temperature, but rapidly melts into a low-viscosity liquid in a temperature range above the melting point. The melting point of the crystalline epoxy resin indicates the apex temperature of the endothermic peak of crystal melting, which is heated from room temperature at a heating rate of 5 ° C./min using a differential scanning calorimeter.

The compounding amount of the epoxy resin used in the present invention is preferably 10 to 100 parts by weight, more preferably 30 to 70 parts by weight with respect to 100 parts by weight of the acrylic acid copolymer.

The resin composition constituting the film adhesive of the present invention may contain an organic compound having a cyanate group. Examples of the organic compound having a cyanate group include bisphenol A dicyanate, bisphenol F dicyanate, bis (4-cyanate phenyl) ether, and bisphenol E dicyanate cyanate novolak resin.

The resin composition constituting the film adhesive of the present invention may contain a phenol resin. In this case, the phenol resin acts as a curing agent for the epoxy resin.

Examples of the phenol resin used in the present invention include bis (4-hydroxy-3,5-dimethylphenyl) methane (common name: tetramethylbisphenol F), 4,4′-sulfonyldiphenol, and 4,4′-isopropylidenediphenol ( Commonly called bisphenol A), bis (4-hydroxyphenyl) methane, bis (2-hydroxyphenyl) methane, (2-hydroxyphenyl) (4-hydroxyphenyl)
Three types of methane and a mixture of bis (4-hydroxyphenyl) methane, bis (2-hydroxyphenyl) methane, and (2-hydroxyphenyl) (4-hydroxyphenyl) methane (for example, Honshu Chemical Industry Co., Ltd.) -Bisphenols such as bisphenol FD), 1,2-benzenediol, 1,3-benzenediol, 1,4-benzenediol and other dihydroxybenzenes, 1,2,4
-Compounds such as trihydroxybenzenes such as benzenetriol, various isomers of dihydroxynaphthalene such as 1,6-dihydroxynaphthalene, various isomers of biphenols such as 2,2'-biphenol and 4,4'-biphenol Is mentioned.

The resin composition constituting the film adhesive of the present invention may contain an ultraviolet curable resin, and the ultraviolet curable resin is preferably an acrylic compound (C-1).
Examples include acrylic acid or methacrylic acid ester monomers. Among them, ethylene glycol diacrylate, ethylene glycol dimethacrylate, 1,6-hexanediol diacrylate, 1,6-hexanediol dimethacrylate, glycerol diacrylate, glycerol dimethacrylate, 1,10 diacrylate
-Bifunctional acrylates such as decanediol, 1,10-decanediol dimethacrylate, trimethylolpropane triacrylate, trimethylolpropane trimethacrylate, pentaerythritol triacrylate, pentaerythritol trimethacrylate, dipentaacrylate And polyfunctional acrylates such as erythritol and dipentaerythritol hexamethacrylate. Of these, alkyl esters are preferable, and particularly preferably, the ester moiety has 1 to 1 carbon atoms.
15 acrylic acid and methacrylic acid alkyl esters.

The content of component units derived from acrylic acid or methacrylic acid ester which is an ultraviolet curable resin used in the present invention is usually 20 to 55 parts by weight, preferably 30 to 100 parts by weight with respect to 100 parts by weight of acrylic acid copolymer. When the amount is less than the lower limit value of 40 parts by weight, the adhesive strength is poor, and when the upper limit value is exceeded, the adhesive force with the protective film becomes unnecessarily large.

In addition, by introducing acrylic acid or methacrylic acid ester of an ultraviolet curable resin having a hydroxyl group such as a hydroxyl group in the molecule, the adhesion to the adherend and the properties of the adhesive can be easily controlled. .

Further, by mixing the photopolymerization initiator (C-2) with the UV curable resin, if it is difficult to peel off from the base material, the surface of the pressure-sensitive adhesive layer is hardened and easily peeled off by irradiating with UV light. It is also an important component for use as a die attach film.

Specific examples of such photopolymerization initiator (C-2) include benzophenone, acetophenone, benzoin, benzoin isobutyl ether, methyl benzoin benzoate, benzoin benzoic acid, benzoin methyl ether, benzylfinyl sulfide, benzyl, dibenzyl. , Diacetyl and the like.

The ultraviolet curable resin used in the present invention is preferably the above components (C-1) to (
C-2), and the blending ratio thereof is appropriately set according to the characteristics of each component. Generally, the component (C-2) is added to 100 parts by weight of the component (C-1). Is preferably 1 to 30 parts by weight, more preferably about 3 to 15 parts by weight. When the amount is less than 1 part by weight, the effect of the photoinitiator is weak, and when it exceeds 30 parts by weight, the reactivity is increased and the storage stability is deteriorated.

The film adhesive of the present invention may contain a filler, and the average particle size of the filler is preferably 0.1 to 25 μm. When the average particle size is less than 0.1 μm, the effect of filler addition is small, and when it exceeds 25 μm, the adhesive strength as a film may be reduced.

As the filler used in the film adhesive of the present invention, silver, titanium oxide, silica, mica and the like are preferable.

The content of the filler is preferably 0% to 30% by weight, and if it exceeds 30%, the film becomes brittle and adhesiveness decreases.

The resin composition of the pressure-sensitive adhesive layer in the present invention is preferably made of an acrylic acid copolymer.

It is preferable that the glass transition temperature of an adhesive layer is -30 degreeC or more and 60 degrees C or less.
If the glass transition temperature exceeds 60 ° C., the sticking property of the wafer ring at 60 ° C. or less becomes difficult, and if it falls below −30 ° C., the tack property is too strong and it becomes difficult to remove the wafer ring.

Moreover, it is preferable that the base film (I) and the base film (II) of the present invention are made of a light-transmitting base material.

Examples of the light transmissive substrate used in the present invention include polypropylene film, polyethylene film, polybutadiene film, polyvinyl chloride film, etc., and 30 to 70 parts by weight, preferably 40 to 60 parts by weight of polypropylene resin and 70. It is preferable that it is a mixture of a polystyrene block and a copolymer composed of a vinyl isoprene block of -30 parts by weight, preferably 60-40 parts by weight.

The film thickness of the light transmissive substrate used in the present invention is preferably 20 to 200 μm, particularly preferably 25 to 150 μm.

In the present invention, the resin composition used for the film adhesive has a sufficient adhesiveness when uncured, includes a component that is cured by irradiating ultraviolet rays of 370 nm or less, and is cured by irradiation with ultraviolet rays. It is preferable to have a feature that it does not have tackiness at the interface between the adhesive and the adherend.

As a manufacturing method of the die attach film with a dicing sheet function of the present invention, first, on the release sheet, the resin composition constituting the film adhesive is varnished,
According to a generally known method such as a comma coater, a die coater, or a gravure coater, coating and drying are performed to form an adhesive layer, and a light transmissive substrate is laminated thereon. By laminating another film consisting of a pressure-sensitive adhesive layer and a light-transmitting base material on what was obtained in a circle by half-cutting this, a light-transmitting base material, a pressure-sensitive adhesive layer, and a light-transmitting base material A die attach film with a dicing sheet function comprising an adhesive layer and a protective film can be obtained.

The thickness of the pressure-sensitive adhesive layer and the adhesive layer thus formed is preferably 3 to 1.
It is more preferably 10 to 75 μm at 00 μm. When the thickness is less than 3 μm, the effect as an adhesive is reduced, and when it exceeds 100 μm, it is difficult to produce a product and the thickness accuracy is deteriorated.

In the method for producing a semiconductor device of the present invention, first, the adhesive layer of the die attach film with a dicing sheet function of the present invention is placed on the back surface of a silicon wafer at room temperature or 60 °
After pasting under mild conditions of ℃ or less, after attaching the wafer ring to the adhesive layer, fix the silicon wafer with die attach film on the dicing machine through the light transmissive substrate, and cut the dicing saw etc. By using the means, the silicon wafer with the die attach film is cut into individual pieces to obtain a semiconductor chip as individual dies.

Subsequently, ultraviolet light (center wavelength = about 365 nm) is irradiated onto the light-transmitting substrate surface of the die attach film attached to the semiconductor chip obtained as described above. Usually, the illuminance is set to 20 to 500 mJ / cm ² and the irradiation time is set to a range of 5 to 600 seconds. Various conditions can be set according to the case of the above-mentioned ultraviolet irradiation.

Next, the die attach film is peeled off at the interface between the light-transmitting base material and the adhesive layer while the die attach film remains fixed on the back surface of the semiconductor chip.

Thus, die bonding can be performed by heating and pressure-bonding the semiconductor chip to which the adhesive layer of the die attach film is fixed to the metal lead frame or the substrate through the adhesive layer as it is. The heating and pressure bonding conditions are usually a heating temperature of 100 to 300 ° C. and a pressure bonding time of 1 to 10 seconds, preferably 1
It is heating at 00 to 200 ° C. and a pressing time of 1 to 5 seconds. Subsequently, by heating, the epoxy resin in the die attach film is cured, and a semiconductor device in which the semiconductor chip and the lead frame, the substrate, etc. are firmly bonded can be obtained.
The heating temperature in this case is usually about 100 to 300 ° C., preferably 150 to 25 ° C.
The heating time is usually 1 to 240 minutes, preferably 10 to 60 minutes.

The finally cured die attach film has high heat resistance, and because of the acrylic rubber resin component, the cured product has low brittleness, excellent shear strength, high impact resistance, and heat resistance.

Examples of the present invention will be described below, but the present invention is not limited to these examples.
I) Adhesive layer component (A) Acrylic acid copolymer resin component (A-1) Epoxy group-containing acrylic acid copolymer (manufactured by Nagase ChemteX Corporation,
(Product name: SG80HDR, Tg: 10 ° C., molecular weight Mw = 350,000)
(A-2) Epoxy group-containing acrylic acid copolymer (manufactured by Nagase ChemteX Corporation,
(Product name: SGP3DR, Tg: 12 ° C., molecular weight Mw = 850000)
(B) Epoxy resin component (B-1) Cresol novolac epoxy resin (trade name: EOCN-1020-
80, epoxy equivalent: 200 g / eq, manufacturer: Nippon Kayaku Co., Ltd.)
(C) UV curable resin [(C-1) (meth) acrylic acid ester monomer] 1,6-hexanediol dimethacrylate (manufacturer: Kyoeisha Chemical Co., Ltd.)
[(C-2) Photopolymerization initiator] 2,2-dimethoxyx-1,2-diphenylethane-1-one (Manufacturer: Ciba-Gigi Co., Ltd.)
(D) Imidazole (D-1) Imidazole compound (trade name: 1B2MZ, manufacturer: Shikoku Chemicals)
II) Adhesive layer component Acrylic acid copolymer component Acrylic acid copolymer (manufactured by Nagase ChemteX Corporation, trade name: SG70L, T
g: −17 ° C., molecular weight Mw = 800000)
CLEARTECH CT-H consisting of 60 parts by weight of Hibra and 40 parts by weight of polypropylene
A film having a thickness of 100 μm was formed from 817 (manufactured by Kuraray) using an extruder.

Example 1
Each component was prepared at the ratio shown in Table 1 to obtain a resin composition. This resin composition is
It apply | coated to 100 micrometers of polyethylene terephthalate base materials, and it dried and obtained the film adhesive. A sheet made of a protective film (polyethylene terephthalate substrate), a film adhesive, and a light transmissive substrate was obtained by laminating a light transmissive substrate together with this film adhesive. This sheet was half cut into a circle larger than the outer diameter of the wafer used and smaller than the inner diameter of the wafer ring. On the other hand, a pressure-sensitive adhesive layer was formed on the light-transmitting substrate side of the sheet half-cut into a circular shape after laminating the light-transmitting substrate on a sheet obtained by applying and drying a pressure-sensitive adhesive on a polyethylene terephthalate substrate 100 μm. A light transmissive substrate was laminated to prepare a die attach film with a dicing sheet function.

After the protective film of the die attach film is peeled off, a semiconductor wafer is attached to the adhesive surface, a wafer ring is attached to the adhesive layer and fixed and held, and a dicing saw is used to rotate the spindle at 30,000 rpm, cutting speed 5
It was cut into a 5 × 5 mm square chip size at 0 mm / sec. Next, after irradiating UV light with an integrated light amount of 250 mJ / cm ² in 20 seconds, the light-transmitting substrate is peeled off from the semiconductor chip to which the die attach film is adhered, and then the semiconductor chip is passed through a film adhesive. To the lead frame of 42-alloy alloy, 180 ° C-1MPa
Crimping was performed under the condition of -1.0 sec, die bonding was performed, and each item as a dicing sheet and a die attach film was evaluated. The results are shown in Tables 2 and 3.

Example 2
The same operation as in Example 1 was performed except that the blending ratio of the adhesive component was changed as shown in Table 1.

<< Comparative Example 1 >>
Each component was prepared at the ratio shown in Table 1 to obtain a resin composition. This resin composition is
It apply | coated to 100 micrometers of polyethylene terephthalate base materials, and it dried and obtained the film adhesive. A die attach film with a dicing sheet function consisting of a protective film (polyethylene terephthalate substrate), a film adhesive, and a light transmissive substrate is prepared by laminating a light transmissive substrate together with this film adhesive. did. The adhesive layers of the wafer ring attaching portion and the wafer attaching portion are the same resin composition.

The following evaluation methods were used for evaluation of Examples and Comparative Examples.
(1) Glass transition temperature Relaxation peak when dynamic viscoelasticity of a film adhesive is measured at a temperature rising rate of 3 ° C./min and a frequency of 10 Hz using a dynamic viscoelastic device manufactured by Seiko Instruments Inc.
(2) Spattering of chips after dicing After dicing the semiconductor wafer, evaluation was performed by measuring the number of semiconductor chips peeled off from the die attach film due to weak adhesion.
(3) Pickup property It was evaluated whether a semiconductor chip with a die attach film could be picked up from a light-transmitting substrate (pickup) by irradiating ultraviolet rays after dicing the semiconductor wafer.

○: Almost all chips can be picked up. Δ: 50 to 90% of diced chips can be picked up. ×: Pickup is 50% or less. (4) Chipping characteristics. 30 μm or less.

    (Triangle | delta): The width | variety of a chip | tip hook is 30-50 micrometers at maximum.

×: The width of the chip is 50 μm or more at maximum.
(5) Contamination of wafer ring In Examples 1 and 2, the transfer of the adhesive to the wafer ring was visually evaluated when the wafer ring was affixed to the adhesive layer and the adhesive layer in the comparative example was removed after standing for one week.
The evaluation was ○ if the wafer ring was not contaminated and × if it was contaminated.
(6) Initial adhesion as a die attach film A semiconductor chip with a die attach film is die-bonded to a 42-alloy alloy lead frame under conditions of 180 ° C.-1 MPa-1.0 sec, and the chip and lead are left untreated. The shear strength with the frame was measured and evaluated.
(7) Adhesiveness after moisture absorption The measurement sample die-bonded in (8) above was 85 ° C / 85% RH / 16.
After the moisture absorption treatment for 8 hours, the shear strength between the chip and the lead frame was measured and evaluated.

○: Shear strength is 1 MPa or more Δ: Shear strength is 0.5 to 1.0 MPa
X: Shear strength is less than 0.5 MPa

It is a top view which shows an example of the die attach film with a dicing sheet function of this invention. It is sectional drawing of the AA 'part of FIG.

Explanation of symbols

1 wafer 2 wafer ring 3 adhesive layer 4 substrate film (II)
5 Adhesive layer 6 Base film (I)

Claims (9)

A die attach film comprising a base film (I), a pressure-sensitive adhesive layer, a base film (II), and a film-like adhesive layer in this order, and the outer diameters of the base film (II) and the adhesive layer A die attach film with a dicing sheet function, characterized in that is larger than the outer diameter of the portion to be bonded to the wafer and smaller than the inner diameter of the portion to be bonded to the wafer ring. The die attach film with a dicing sheet function according to claim 1, wherein a glass transition temperature of the resin composition constituting the film adhesive layer is −30 ° C. or more and 60 ° C. or less. The dicing sheet function-provided according to claim 1 or 2, wherein the resin composition constituting the film adhesive layer comprises an acrylic acid copolymer having a glass transition temperature of -30 ° C to 60 ° C and an epoxy resin. Die attach film. The die attach film with a dicing sheet function according to claim 2 or 3, wherein the acrylic acid copolymer has a molecular weight of 100,000 or more. The die attach film with a dicing sheet function according to claim 2, 3 or 4, wherein the acrylic acid copolymer is an acrylic acid copolymer containing a nitrile group. The die attach film with a dicing sheet function according to any one of claims 1 to 5, wherein the pressure-sensitive adhesive layer is made of an acrylic acid copolymer. The die attach film with a dicing sheet function according to any one of claims 1 to 6, wherein the base film (I) and the base film (II) are made of a light-transmitting base material. (A) The process of bonding a silicon wafer back surface to the adhesive layer part of the die attach film with a dicing sheet function of Claim 1 at 60 degrees C or less,
(B) A step of attaching a wafer ring to the pressure-sensitive adhesive layer formed on the base film (I),
(C) a step of dicing the silicon wafer and separating it into individual dies,
(D) A step of curing the contact interface between the adhesive layer and the base film (II) by irradiating the die attach film surface with ultraviolet rays after dicing,
(E) a pick-up step in which the die having the adhesive layer remaining on the back surface is peeled off from the base film (II) after the adhesive layer is UV-cured;
(F) A method of manufacturing a semiconductor device, comprising the step of heat-bonding the die to a lead frame or a substrate via an adhesive. A semiconductor device formed by bonding a semiconductor element and a lead frame or a substrate with the film-like adhesive for die bonding according to claim 1.

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