JPH10303500A - 高出力半導体レーザダイオード - Google Patents

高出力半導体レーザダイオード

Info

Publication number
JPH10303500A
JPH10303500A JP9363805A JP36380597A JPH10303500A JP H10303500 A JPH10303500 A JP H10303500A JP 9363805 A JP9363805 A JP 9363805A JP 36380597 A JP36380597 A JP 36380597A JP H10303500 A JPH10303500 A JP H10303500A
Authority
JP
Japan
Prior art keywords
region
laser diode
waveguide region
waveguide
cladding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9363805A
Other languages
English (en)
Japanese (ja)
Other versions
JPH10303500A5 (enExample
Inventor
Dmitri Zalmanovitch Garbuzov
ザラマノヴィッチ ガルバゾフ デミトリィ
Joseph Hy Abeles
ハイ エイベルズ ジヨセフ
John Charles Connolly
チャールズ カンリー ジョン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sarnoff Corp
Original Assignee
Sarnoff Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sarnoff Corp filed Critical Sarnoff Corp
Publication of JPH10303500A publication Critical patent/JPH10303500A/ja
Publication of JPH10303500A5 publication Critical patent/JPH10303500A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2018—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers
    • H01S5/2031—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers characterized by special waveguide layers, e.g. asymmetric waveguide layers or defined bandgap discontinuities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34306—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000nm, e.g. InP based 1300 and 1500nm lasers

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Nanotechnology (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
JP9363805A 1996-11-27 1997-11-27 高出力半導体レーザダイオード Pending JPH10303500A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/757,883 US5818860A (en) 1996-11-27 1996-11-27 High power semiconductor laser diode
US08/757883 1996-11-27

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2008039079A Division JP2008135786A (ja) 1996-11-27 2008-02-20 高出力半導体レーザダイオード

Publications (2)

Publication Number Publication Date
JPH10303500A true JPH10303500A (ja) 1998-11-13
JPH10303500A5 JPH10303500A5 (enExample) 2005-07-14

Family

ID=25049618

Family Applications (2)

Application Number Title Priority Date Filing Date
JP9363805A Pending JPH10303500A (ja) 1996-11-27 1997-11-27 高出力半導体レーザダイオード
JP2008039079A Pending JP2008135786A (ja) 1996-11-27 2008-02-20 高出力半導体レーザダイオード

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2008039079A Pending JP2008135786A (ja) 1996-11-27 2008-02-20 高出力半導体レーザダイオード

Country Status (2)

Country Link
US (2) US5818860A (enExample)
JP (2) JPH10303500A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6546032B1 (en) 1999-08-27 2003-04-08 Mitsui Chemicals, Inc. Semiconductor laser apparatus
JP2003520455A (ja) * 2000-01-20 2003-07-02 プリンストン・ライトウェーブ・インク 高出力分布帰還型リッジ導波路レーザー
JP2007049109A (ja) * 2005-07-11 2007-02-22 Mitsubishi Electric Corp 半導体レーザ装置

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2134007C1 (ru) 1998-03-12 1999-07-27 Государственное предприятие Научно-исследовательский институт "Полюс" Полупроводниковый оптический усилитель
US6195381B1 (en) * 1998-04-27 2001-02-27 Wisconsin Alumni Research Foundation Narrow spectral width high-power distributed feedback semiconductor lasers
US6167073A (en) * 1998-07-23 2000-12-26 Wisconsin Alumni Research Foundation High power laterally antiguided semiconductor light source with reduced transverse optical confinement
RU2142665C1 (ru) 1998-08-10 1999-12-10 Швейкин Василий Иванович Инжекционный лазер
JP2000236141A (ja) * 1999-02-16 2000-08-29 Furukawa Electric Co Ltd:The 半導体発光素子
JP2001068789A (ja) 1999-08-26 2001-03-16 Fuji Photo Film Co Ltd 半導体レーザ
US6341189B1 (en) * 1999-11-12 2002-01-22 Sparkolor Corporation Lenticular structure for integrated waveguides
US6782025B2 (en) * 2000-01-20 2004-08-24 Trumpf Photonics, Inc. High power distributed feedback ridge waveguide laser
US6928223B2 (en) * 2000-07-14 2005-08-09 Massachusetts Institute Of Technology Stab-coupled optical waveguide laser and amplifier
DE10046580A1 (de) 2000-09-20 2002-04-04 Osram Opto Semiconductors Gmbh Halbleiter-Laser
US7084444B2 (en) * 2001-03-19 2006-08-01 Trumpf Photonics, Inc. Method and apparatus for improving efficiency in opto-electronic radiation source devices
US6724795B2 (en) 2002-05-10 2004-04-20 Bookham Technology, Plc Semiconductor laser
US6907056B2 (en) * 2003-08-08 2005-06-14 Wisconsin Alumni Research Foundation Semiconductor light sources with doping gradients in optical confinement layers for improved device efficiency
RU2300826C2 (ru) * 2005-08-05 2007-06-10 Василий Иванович Швейкин Инжекционный излучатель
KR20070084973A (ko) * 2006-02-22 2007-08-27 삼성전기주식회사 고출력 반도체 레이저소자
US7403552B2 (en) * 2006-03-10 2008-07-22 Wisconsin Alumni Research Foundation High efficiency intersubband semiconductor lasers
US7457338B2 (en) * 2006-04-19 2008-11-25 Wisconsin Alumni Research Foundation Quantum well lasers with strained quantum wells and dilute nitride barriers
US9912118B2 (en) 2010-06-28 2018-03-06 Iulian Basarab Petrescu-Prahova Diode laser type device
US9755402B2 (en) 2010-06-28 2017-09-05 Iulian Basarab Petrescu-Prahova Edge emitter semiconductor laser type of device with end segments for mirrors protection
US9599613B2 (en) 2011-07-20 2017-03-21 University Of Washington Through Its Center For Commercialization Photonic blood typing
US10031138B2 (en) 2012-01-20 2018-07-24 University Of Washington Through Its Center For Commercialization Hierarchical films having ultra low fouling and high recognition element loading properties

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2666455A1 (fr) 1990-08-31 1992-03-06 Thomson Csf Dispositif optoelectronique et application a la realisation d'un laser et d'un photodetecteur.
JP2674474B2 (ja) 1993-07-29 1997-11-12 日本電気株式会社 歪量子井戸半導体レーザの気相成長方法
JP3251771B2 (ja) 1994-06-03 2002-01-28 富士写真フイルム株式会社 半導体レーザ
JPH0864906A (ja) 1994-08-24 1996-03-08 Nippon Telegr & Teleph Corp <Ntt> 半導体装置の製法
JPH08195529A (ja) 1995-01-17 1996-07-30 Nippon Telegr & Teleph Corp <Ntt> 半導体レーザエピタキシャル結晶積層体および半導体レーザ
DE19524655A1 (de) * 1995-07-06 1997-01-09 Huang Kuo Hsin LED-Struktur

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6546032B1 (en) 1999-08-27 2003-04-08 Mitsui Chemicals, Inc. Semiconductor laser apparatus
JP2003520455A (ja) * 2000-01-20 2003-07-02 プリンストン・ライトウェーブ・インク 高出力分布帰還型リッジ導波路レーザー
JP2007049109A (ja) * 2005-07-11 2007-02-22 Mitsubishi Electric Corp 半導体レーザ装置

Also Published As

Publication number Publication date
JP2008135786A (ja) 2008-06-12
USRE41643E1 (en) 2010-09-07
US5818860A (en) 1998-10-06

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