JPH10303423A - 半導体装置の製造方法および半導体装置 - Google Patents
半導体装置の製造方法および半導体装置Info
- Publication number
- JPH10303423A JPH10303423A JP29459297A JP29459297A JPH10303423A JP H10303423 A JPH10303423 A JP H10303423A JP 29459297 A JP29459297 A JP 29459297A JP 29459297 A JP29459297 A JP 29459297A JP H10303423 A JPH10303423 A JP H10303423A
- Authority
- JP
- Japan
- Prior art keywords
- oxide film
- sacrificial oxide
- gate
- channel
- semiconductor substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 28
- 239000004065 semiconductor Substances 0.000 title claims description 67
- 239000000758 substrate Substances 0.000 claims abstract description 65
- 239000012535 impurity Substances 0.000 claims abstract description 62
- 229910052796 boron Inorganic materials 0.000 claims description 25
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 16
- 239000002344 surface layer Substances 0.000 claims description 15
- 230000001590 oxidative effect Effects 0.000 claims description 5
- 150000001875 compounds Chemical class 0.000 claims description 2
- 150000002500 ions Chemical class 0.000 abstract description 41
- 238000005468 ion implantation Methods 0.000 abstract description 28
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 27
- 229910052710 silicon Inorganic materials 0.000 abstract description 27
- 239000010703 silicon Substances 0.000 abstract description 27
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 abstract description 24
- 238000009826 distribution Methods 0.000 abstract description 20
- 239000012298 atmosphere Substances 0.000 abstract description 10
- 230000005540 biological transmission Effects 0.000 abstract description 6
- 238000010306 acid treatment Methods 0.000 abstract description 5
- 230000001133 acceleration Effects 0.000 description 18
- 238000010438 heat treatment Methods 0.000 description 11
- 229910052785 arsenic Inorganic materials 0.000 description 9
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 9
- 238000002513 implantation Methods 0.000 description 9
- 238000011109 contamination Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 8
- 229910052698 phosphorus Inorganic materials 0.000 description 8
- 239000011574 phosphorus Substances 0.000 description 8
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 5
- 238000001312 dry etching Methods 0.000 description 5
- 239000000969 carrier Substances 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- -1 compound ion Chemical class 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- IUVCFHHAEHNCFT-INIZCTEOSA-N 2-[(1s)-1-[4-amino-3-(3-fluoro-4-propan-2-yloxyphenyl)pyrazolo[3,4-d]pyrimidin-1-yl]ethyl]-6-fluoro-3-(3-fluorophenyl)chromen-4-one Chemical compound C1=C(F)C(OC(C)C)=CC=C1C(C1=C(N)N=CN=C11)=NN1[C@@H](C)C1=C(C=2C=C(F)C=CC=2)C(=O)C2=CC(F)=CC=C2O1 IUVCFHHAEHNCFT-INIZCTEOSA-N 0.000 description 2
- 208000022010 Lhermitte-Duclos disease Diseases 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 229910015900 BF3 Inorganic materials 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001638 boron Chemical class 0.000 description 1
- WTEOIRVLGSZEPR-UHFFFAOYSA-N boron trifluoride Chemical compound FB(F)F WTEOIRVLGSZEPR-UHFFFAOYSA-N 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
Landscapes
- Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
- Grinding Of Cylindrical And Plane Surfaces (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29459297A JPH10303423A (ja) | 1997-02-27 | 1997-10-27 | 半導体装置の製造方法および半導体装置 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9-44396 | 1997-02-27 | ||
| JP4439697 | 1997-02-27 | ||
| JP29459297A JPH10303423A (ja) | 1997-02-27 | 1997-10-27 | 半導体装置の製造方法および半導体装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH10303423A true JPH10303423A (ja) | 1998-11-13 |
Family
ID=18705371
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP29459297A Withdrawn JPH10303423A (ja) | 1997-02-27 | 1997-10-27 | 半導体装置の製造方法および半導体装置 |
| JP2000208867A Expired - Fee Related JP4049974B2 (ja) | 1997-02-27 | 2000-07-10 | 端面研磨装置及び端面研磨方法 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000208867A Expired - Fee Related JP4049974B2 (ja) | 1997-02-27 | 2000-07-10 | 端面研磨装置及び端面研磨方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (2) | JPH10303423A (https=) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001168322A (ja) * | 1999-12-03 | 2001-06-22 | Toshiba Corp | 半導体装置およびその製造方法 |
| JP2010186900A (ja) * | 2009-02-13 | 2010-08-26 | Shin-Etsu Chemical Co Ltd | 太陽電池及びその製造方法 |
| JP2010232530A (ja) * | 2009-03-27 | 2010-10-14 | Sharp Corp | 光電変換素子の製造方法および光電変換素子 |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108687589B (zh) * | 2018-03-28 | 2019-12-17 | 宁波高新区新柯保汽车科技有限公司 | 轴承端面打磨装置 |
| CN110394700A (zh) * | 2019-08-02 | 2019-11-01 | 天津丹阳车圈有限公司 | 一种翻转式车圈双面打磨装置 |
| CN111702594B (zh) * | 2020-06-30 | 2021-10-26 | 萧县众科电磁检测有限公司 | 一种用于防盗网栏加工的缺陷修复设备及其工作方法 |
-
1997
- 1997-10-27 JP JP29459297A patent/JPH10303423A/ja not_active Withdrawn
-
2000
- 2000-07-10 JP JP2000208867A patent/JP4049974B2/ja not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001168322A (ja) * | 1999-12-03 | 2001-06-22 | Toshiba Corp | 半導体装置およびその製造方法 |
| JP2010186900A (ja) * | 2009-02-13 | 2010-08-26 | Shin-Etsu Chemical Co Ltd | 太陽電池及びその製造方法 |
| JP2010232530A (ja) * | 2009-03-27 | 2010-10-14 | Sharp Corp | 光電変換素子の製造方法および光電変換素子 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP4049974B2 (ja) | 2008-02-20 |
| JP2001030154A (ja) | 2001-02-06 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20011113 |
|
| A761 | Written withdrawal of application |
Free format text: JAPANESE INTERMEDIATE CODE: A761 Effective date: 20040517 |