JPH10303129A5 - - Google Patents

Info

Publication number
JPH10303129A5
JPH10303129A5 JP1997123088A JP12308897A JPH10303129A5 JP H10303129 A5 JPH10303129 A5 JP H10303129A5 JP 1997123088 A JP1997123088 A JP 1997123088A JP 12308897 A JP12308897 A JP 12308897A JP H10303129 A5 JPH10303129 A5 JP H10303129A5
Authority
JP
Japan
Prior art keywords
added
opening
amorphous film
region
catalytic element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1997123088A
Other languages
English (en)
Japanese (ja)
Other versions
JP3980117B2 (ja
JPH10303129A (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from JP12308897A external-priority patent/JP3980117B2/ja
Priority to JP12308897A priority Critical patent/JP3980117B2/ja
Priority to TW087100259A priority patent/TW386238B/zh
Priority to US09/006,844 priority patent/US6380560B1/en
Priority to CNB98105837XA priority patent/CN1173412C/zh
Priority to KR10-1998-0001529A priority patent/KR100465416B1/ko
Priority to CNB2004100642546A priority patent/CN100377363C/zh
Priority to CN200610101412XA priority patent/CN1877861B/zh
Publication of JPH10303129A publication Critical patent/JPH10303129A/ja
Priority to US10/107,113 priority patent/US6730932B2/en
Priority to US10/753,524 priority patent/US20040164300A1/en
Publication of JPH10303129A5 publication Critical patent/JPH10303129A5/ja
Publication of JP3980117B2 publication Critical patent/JP3980117B2/ja
Application granted granted Critical
Priority to US13/462,032 priority patent/US8723182B2/en
Priority to US14/274,888 priority patent/US9389477B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP12308897A 1997-01-20 1997-04-26 半導体装置の作製方法 Expired - Fee Related JP3980117B2 (ja)

Priority Applications (11)

Application Number Priority Date Filing Date Title
JP12308897A JP3980117B2 (ja) 1997-04-26 1997-04-26 半導体装置の作製方法
TW087100259A TW386238B (en) 1997-01-20 1998-01-09 Semiconductor device and method of manufacturing the same
US09/006,844 US6380560B1 (en) 1997-01-20 1998-01-14 Semiconductor device forming a pixel matrix circuit
CNB2004100642546A CN100377363C (zh) 1997-01-20 1998-01-20 一种便携式信息终端和一种摄象机
CN200610101412XA CN1877861B (zh) 1997-01-20 1998-01-20 半导体器件及其用途
KR10-1998-0001529A KR100465416B1 (ko) 1997-01-20 1998-01-20 반도체장치및그의제조방법
CNB98105837XA CN1173412C (zh) 1997-01-20 1998-01-20 半导体器件
US10/107,113 US6730932B2 (en) 1997-01-20 2002-03-26 Semiconductor device and method of manufacturing the same
US10/753,524 US20040164300A1 (en) 1997-01-20 2004-01-09 Semiconductor device and method of manufacturing the same
US13/462,032 US8723182B2 (en) 1997-01-20 2012-05-02 Semiconductor device and method of manufacturing the same
US14/274,888 US9389477B2 (en) 1997-01-20 2014-05-12 Semiconductor device and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12308897A JP3980117B2 (ja) 1997-04-26 1997-04-26 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JPH10303129A JPH10303129A (ja) 1998-11-13
JPH10303129A5 true JPH10303129A5 (enrdf_load_stackoverflow) 2005-03-17
JP3980117B2 JP3980117B2 (ja) 2007-09-26

Family

ID=14851920

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12308897A Expired - Fee Related JP3980117B2 (ja) 1997-01-20 1997-04-26 半導体装置の作製方法

Country Status (1)

Country Link
JP (1) JP3980117B2 (enrdf_load_stackoverflow)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6680487B1 (en) * 1999-05-14 2004-01-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor comprising a TFT provided on a substrate having an insulating surface and method of fabricating the same
JP2001185732A (ja) * 1999-12-27 2001-07-06 Toshiba Corp 半導体薄膜の製造方法、及び薄膜トランジスタとその製造方法
JP4939689B2 (ja) * 2000-01-26 2012-05-30 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
US8125601B2 (en) 2003-01-08 2012-02-28 Samsung Electronics Co., Ltd. Upper substrate and liquid crystal display device having the same
KR101023972B1 (ko) 2003-10-20 2011-03-28 삼성전자주식회사 상부기판 및 이를 갖는 액정표시장치
CN101681882B (zh) * 2007-08-10 2012-05-23 夏普株式会社 薄膜电容、使用该薄膜电容的显示装置和存储器单元、以及它们的制造方法

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