JPH10301147A5 - - Google Patents

Info

Publication number
JPH10301147A5
JPH10301147A5 JP1997123284A JP12328497A JPH10301147A5 JP H10301147 A5 JPH10301147 A5 JP H10301147A5 JP 1997123284 A JP1997123284 A JP 1997123284A JP 12328497 A JP12328497 A JP 12328497A JP H10301147 A5 JPH10301147 A5 JP H10301147A5
Authority
JP
Japan
Prior art keywords
silicon
heat treatment
region
forming
group
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1997123284A
Other languages
English (en)
Japanese (ja)
Other versions
JP4090533B2 (ja
JPH10301147A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP12328497A priority Critical patent/JP4090533B2/ja
Priority claimed from JP12328497A external-priority patent/JP4090533B2/ja
Priority to US09/065,692 priority patent/US6133075A/en
Publication of JPH10301147A publication Critical patent/JPH10301147A/ja
Priority to US09/617,105 priority patent/US6524896B1/en
Priority to US10/357,333 priority patent/US6864127B2/en
Publication of JPH10301147A5 publication Critical patent/JPH10301147A5/ja
Application granted granted Critical
Publication of JP4090533B2 publication Critical patent/JP4090533B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP12328497A 1997-04-25 1997-04-25 半導体装置の作製方法 Expired - Fee Related JP4090533B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP12328497A JP4090533B2 (ja) 1997-04-25 1997-04-25 半導体装置の作製方法
US09/065,692 US6133075A (en) 1997-04-25 1998-04-24 Semiconductor device and method of fabricating the same
US09/617,105 US6524896B1 (en) 1997-04-25 2000-07-14 Semiconductor device and method of fabricating the same
US10/357,333 US6864127B2 (en) 1997-04-25 2003-02-04 Semiconductor device and method of fabricating the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12328497A JP4090533B2 (ja) 1997-04-25 1997-04-25 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JPH10301147A JPH10301147A (ja) 1998-11-13
JPH10301147A5 true JPH10301147A5 (enrdf_load_stackoverflow) 2005-03-03
JP4090533B2 JP4090533B2 (ja) 2008-05-28

Family

ID=14856766

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12328497A Expired - Fee Related JP4090533B2 (ja) 1997-04-25 1997-04-25 半導体装置の作製方法

Country Status (1)

Country Link
JP (1) JP4090533B2 (enrdf_load_stackoverflow)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW386238B (en) 1997-01-20 2000-04-01 Semiconductor Energy Lab Semiconductor device and method of manufacturing the same
US6506635B1 (en) 1999-02-12 2003-01-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, and method of forming the same
JP4731655B2 (ja) * 1999-02-12 2011-07-27 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4627822B2 (ja) * 1999-06-23 2011-02-09 株式会社半導体エネルギー研究所 表示装置
US6770518B2 (en) 2001-01-29 2004-08-03 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3070062B2 (ja) * 1990-03-29 2000-07-24 ソニー株式会社 液晶表示装置及びその製造方法
JP3431682B2 (ja) * 1993-03-12 2003-07-28 株式会社半導体エネルギー研究所 半導体回路の作製方法
JP2649325B2 (ja) * 1993-07-30 1997-09-03 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3067949B2 (ja) * 1994-06-15 2000-07-24 シャープ株式会社 電子装置および液晶表示装置
JP3539821B2 (ja) * 1995-03-27 2004-07-07 株式会社半導体エネルギー研究所 半導体装置の作製方法

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