JPH10300817A - Semiconductor inspection device - Google Patents

Semiconductor inspection device

Info

Publication number
JPH10300817A
JPH10300817A JP9104124A JP10412497A JPH10300817A JP H10300817 A JPH10300817 A JP H10300817A JP 9104124 A JP9104124 A JP 9104124A JP 10412497 A JP10412497 A JP 10412497A JP H10300817 A JPH10300817 A JP H10300817A
Authority
JP
Japan
Prior art keywords
timing
output
semiconductor device
circuit
judgment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9104124A
Other languages
Japanese (ja)
Inventor
Michio Maekawa
道生 前川
Junichi Hirase
潤一 平瀬
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP9104124A priority Critical patent/JPH10300817A/en
Publication of JPH10300817A publication Critical patent/JPH10300817A/en
Pending legal-status Critical Current

Links

Abstract

PROBLEM TO BE SOLVED: To perform an output signal timing inspection based on output signal in a short time by comparing the output of a semiconductor device with a comparative voltage at a judgment timing set by a delay control circuit. SOLUTION: The function inspection and timing inspection of a semiconductor device 5 are simultaneously performed. The output edge timing 14 of the output A6 of the semiconductor device 5 is inspected by use of a timing detecting circuit 13. An optional judgment timing delay value 15 is added to the output edge timing 14 by a delay control circuit 12, and a timing generating circuit 2 is controlled by the delay control circuit 12 to generate a judgment timing 9 from the timing generating circuit 2. On the other hand, the output A6 of the semiconductor device 5 is compared with a H-comparative voltage value 7 and an L-comparative voltage value 8 by a comparator circuit 1 at the judgment timing 9, and the result is theoretically compared with an expected value pattern 10 from a pattern generator 3 by a theoretical comparative circuit 4 to provide a result of quality judgment.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】この発明は、半導体装置の出
荷検査を行う半導体検査装置に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor inspection apparatus for inspecting a shipment of a semiconductor device.

【0002】[0002]

【従来の技術】図3は従来の半導体検査装置の機能試験
回路の構成図を示す。1はコンパレータ回路、2はタイ
ミング発生器、3はパターン発生器、4は論理比較回
路、5は半導体装置である。図4は判定タイミング9、
比較電圧値7,8、期待値パターン10および半導体装
置5の出力A6(H出力検出パターン)の関係を示す。
図3および図4を用いて従来の技術の説明を行う。半導
体装置5の機能検査を行う場合、半導体装置5の出力A
6を次のようにして良否判定する。タイミング発生器2
で発生する判定タイミング9で、コンパレータ回路1に
よりH比較電圧値7およびL比較電圧値8と半導体装置
5の出力A6との比較を行い、その結果を論理比較回路
4でパターン発生器3からの期待値パターン10と論理
比較を行い、良否判定結果11を得る。図4の(a)は
判定結果が良の状態であり、(b)が判定結果が否の状
態である。
2. Description of the Related Art FIG. 3 shows a configuration diagram of a function test circuit of a conventional semiconductor inspection device. 1 is a comparator circuit, 2 is a timing generator, 3 is a pattern generator, 4 is a logical comparison circuit, and 5 is a semiconductor device. FIG. 4 shows the judgment timing 9,
The relationship between the comparative voltage values 7, 8, the expected value pattern 10, and the output A6 (H output detection pattern) of the semiconductor device 5 is shown.
A conventional technique will be described with reference to FIGS. When the function test of the semiconductor device 5 is performed, the output A of the semiconductor device 5
6 is determined as follows. Timing generator 2
The comparator circuit 1 compares the H-comparison voltage value 7 and the L-comparison voltage value 8 with the output A6 of the semiconductor device 5 at a judgment timing 9 generated by Logical comparison with the expected value pattern 10 is performed to obtain a pass / fail judgment result 11. FIG. 4A shows a state where the determination result is good, and FIG. 4B shows a state where the determination result is negative.

【0003】このような構成を用いることにより、半導
体装置5の機能検査を高速に行うことが可能である。
By using such a configuration, it is possible to perform a function test of the semiconductor device 5 at high speed.

【0004】[0004]

【発明が解決しようとする課題】近年、半導体装置の高
速化により、半導体装置5の入力・出力信号のタイミン
グ精度がより厳しく求められてきている。このため、半
導体装置5の出荷検査においては、機能検査だけでなく
タイミング検査を行う必要がある。この半導体装置5の
入力・出力信号のタイミングのうち、入力信号のタイミ
ングと入力信号を基準にした出力信号のタイミングは、
半導体検査装置のシステムクロックを基準にして高精度
に発生させ判定することができる。
In recent years, as the speed of a semiconductor device has been increased, the timing accuracy of input / output signals of the semiconductor device 5 has been more strictly required. Therefore, in the shipping inspection of the semiconductor device 5, it is necessary to perform not only the function inspection but also the timing inspection. Among the timings of the input / output signals of the semiconductor device 5, the timing of the input signal and the timing of the output signal based on the input signal are as follows:
It can be generated and determined with high accuracy based on the system clock of the semiconductor inspection device.

【0005】しかし、半導体装置5の出力信号を基準に
した出力信号のタイミングを精度良く判定するために
は、まずコンパレータ回路1の判定タイミングを変化さ
せて、半導体装置5の出力エッジのタイミングを探す必
要がある。この探し方には、シーケンシャルサーチ、バ
イナリサーチなどの方法があるが、何れにしても機能検
査を複数回実行する必要がある。このため、半導体装置
の出力信号を基準にした出力信号のタイミングを検査す
る場合、検査時間が長くなってしまうという課題があっ
た。
However, in order to accurately determine the timing of the output signal based on the output signal of the semiconductor device 5, the determination timing of the comparator circuit 1 is first changed to search for the output edge timing of the semiconductor device 5. There is a need. This search method includes a sequential search method and a binary search method. In any case, it is necessary to execute the function test a plurality of times. For this reason, when inspecting the timing of the output signal based on the output signal of the semiconductor device, there has been a problem that the inspection time becomes longer.

【0006】したがって、この発明の目的は、短時間で
出力信号を基準にした出力信号のタイミング検査を行う
ことができる半導体検査装置を提供することである。
SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to provide a semiconductor inspection apparatus capable of performing a timing inspection of an output signal based on an output signal in a short time.

【0007】[0007]

【課題を解決するための手段】請求項1の半導体検査装
置は、半導体装置の出力エッジタイミングを検出するタ
イミング検出回路と、出力エッジタイミングに判定タイ
ミングディレー値を付加するディレー制御回路と、この
ディレー制御回路により設定された判定タイミングを発
生するタイミング発生器と、判定タイミングで半導体装
置の出力と比較電圧とを比較するコンパレータ回路と、
判定タイミングでコンパレータ回路からの比較値とパタ
ーン発生器からの期待値の論理比較を行う論理比較回路
を備えたものである。
According to a first aspect of the present invention, there is provided a semiconductor inspection apparatus comprising: a timing detection circuit for detecting an output edge timing of a semiconductor device; a delay control circuit for adding a judgment timing delay value to the output edge timing; A timing generator that generates a determination timing set by the control circuit, a comparator circuit that compares an output of the semiconductor device with a comparison voltage at the determination timing,
The logic circuit includes a logical comparison circuit that performs a logical comparison between a comparison value from the comparator circuit and an expected value from the pattern generator at the determination timing.

【0008】請求項1の半導体検査装置によれば、半導
体装置の出力のタイミングに連動して判定タイミングを
制御できるように構成したため、機能検査とタイミング
検査を同時に行うことができ、従来の半導体検査装置に
比べて、数分の一から数十分の一の短時間でタイミング
検査を行うことができる。
According to the semiconductor inspection apparatus of the first aspect, since the determination timing can be controlled in conjunction with the output timing of the semiconductor device, the function inspection and the timing inspection can be performed simultaneously. Compared with the device, the timing inspection can be performed in a short time of one tenth to several tenths.

【0009】[0009]

【発明の実施の形態】この発明の一実施の形態を図1お
よび図2により説明する。図1は、この発明の一実施の
形態による半導体検査装置のタイミング検査兼用機能検
査回路の構成図を示す。1はコンパレータ回路、2はタ
イミング発生器、3はパターン発生器、4は論理比較回
路、5は半導体装置、12はディレー制御回路、13は
タイミング検出回路である。半導体装置5の機能検査と
タイミング検査はつぎのようにして同時に行うものであ
る。まず、タイミング検出回路13を用いて半導体装置
の出力A6の出力エッジタイミング14を検出する。次
にディレー制御回路12で出力エッジタイミング14
に、任意の判定タイミングディレー値15を付加し、デ
ィレー制御回路12によりタイミング発生器2を制御し
て、タイミング発生器2から判定タイミング9を発生さ
せる。一方、その判定タイミング9でコンパレータ回路
1によりH比較電圧値7およびL比較電圧値8と半導体
装置5の出力A6との比較を行い、その結果を論理比較
回路4でパターン発生器3からの期待値パターン10と
論理比較を行い、良否判定結果11を得る。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS One embodiment of the present invention will be described with reference to FIGS. FIG. 1 shows a configuration diagram of a timing inspection and function inspection circuit of a semiconductor inspection device according to an embodiment of the present invention. 1 is a comparator circuit, 2 is a timing generator, 3 is a pattern generator, 4 is a logic comparison circuit, 5 is a semiconductor device, 12 is a delay control circuit, and 13 is a timing detection circuit. The function test and the timing test of the semiconductor device 5 are performed simultaneously as follows. First, the output edge timing 14 of the output A6 of the semiconductor device is detected using the timing detection circuit 13. Next, the output edge timing 14 is output from the delay control circuit 12.
Then, an arbitrary judgment timing delay value 15 is added to the signal, and the delay control circuit 12 controls the timing generator 2 to generate the judgment timing 9 from the timing generator 2. On the other hand, the comparator circuit 1 compares the H-comparison voltage value 7 and the L-comparison voltage value 8 with the output A6 of the semiconductor device 5 at the judgment timing 9, and the logical comparison circuit 4 compares the result to the Logical comparison with the value pattern 10 is performed to obtain a pass / fail judgment result 11.

【0010】ここで、判定タイミングディレー値15に
タイミング検査規格値を設定することにより、半導体装
置5の機能検査とタイミング検査を同時に高速に行うこ
とが可能である。図2は、出力エッジタイミング14、
判定タイミングディレー値15、判定タイミング9およ
び比較電圧値7,8の関係を示すが、同図(a),
(a′)は半導体装置5の出力A6の場合を示し、同図
(b),(b′)は半導体装置5の出力B16(L出力
検出パターン)の場合を示し、出力B16についても出
力A6と同様に行なう。この場合のタイミング検出回路
13による出力エッジタイミング14は出力A6に合わ
せ、出力A6の出力エッジタイミング14を同一端子の
判定タイミング9に反映するのみならず、別端子の判定
タイミングにも反映させている。
Here, by setting the timing inspection standard value to the judgment timing delay value 15, the function inspection and the timing inspection of the semiconductor device 5 can be simultaneously performed at high speed. FIG. 2 shows the output edge timing 14,
The relationship between the judgment timing delay value 15, the judgment timing 9, and the comparison voltage values 7, 8 is shown in FIG.
(A ') shows the case of the output A6 of the semiconductor device 5, and (b) and (b') show the case of the output B16 (L output detection pattern) of the semiconductor device 5. The output B16 also has the output A6. Perform in the same manner as described above. In this case, the output edge timing 14 of the timing detection circuit 13 matches the output A6, and the output edge timing 14 of the output A6 is reflected not only in the determination timing 9 of the same terminal but also in the determination timing of another terminal. .

【0011】そして、同図(a)は出力A6についての
論理比較回路4の判定結果が良の場合を示し、(a′)
は判定結果が否の場合を示す。また同図(b)は出力B
16についての判定結果が良の場合を示し、(b′)は
判定結果が否の場合を示す。
FIG. 2A shows a case where the judgment result of the logical comparison circuit 4 for the output A6 is good, and FIG.
Indicates a case where the determination result is negative. Also, FIG.
16 shows a case where the determination result is good, and (b ') shows a case where the determination result is negative.

【0012】[0012]

【発明の効果】請求項1の半導体検査装置によれば、半
導体装置の出力のタイミングに連動して判定タイミング
を制御できるように構成したため、機能検査とタイミン
グ検査を同時に行うことができ、従来の半導体検査装置
に比べて、数分の一から数十分の一の短時間でタイミン
グ検査を行うことができる。
According to the semiconductor inspection apparatus of the first aspect, since the determination timing can be controlled in conjunction with the output timing of the semiconductor device, the function inspection and the timing inspection can be performed simultaneously. Compared with a semiconductor inspection device, a timing inspection can be performed in a short time of several tenths to several tenths.

【図面の簡単な説明】[Brief description of the drawings]

【図1】この発明の一実施の形態による半導体検査装置
のタイミング検査兼用機能検査回路の構成図である。
FIG. 1 is a configuration diagram of a timing inspection and function inspection circuit of a semiconductor inspection device according to an embodiment of the present invention.

【図2】その出力エッジタイミング、判定タイミングデ
ィレー値、判定タイミング、比較電圧値および半導体装
置の出力の関係を示す説明図であり、(a)は出力Aの
判定結果が良の状態、(a′)は出力Aの判定結果が否
の状態、(b)は出力Bの判定結果が良の状態、
(b′)は出力Bの判定結果が否の状態である。
FIGS. 2A and 2B are explanatory diagrams showing the relationship among the output edge timing, the judgment timing delay value, the judgment timing, the comparison voltage value, and the output of the semiconductor device. FIG. ') Is a state where the judgment result of the output A is negative, (b) is a state where the judgment result of the output B is good,
(B ') is a state where the determination result of the output B is negative.

【図3】従来の半導体検査装置の機能検査回路の構成図
である。
FIG. 3 is a configuration diagram of a function inspection circuit of a conventional semiconductor inspection device.

【図4】その判定タイミング、比較電圧値、期待値パタ
ーンおよび半導体装置の出力の関係を示す説明図であ
り、(a)は判定結果が良の状態、(b)は否の状態で
ある。
FIGS. 4A and 4B are explanatory diagrams showing the relationship among the determination timing, the comparison voltage value, the expected value pattern, and the output of the semiconductor device, wherein FIG. 4A shows a state in which the determination result is good and FIG.

【符号の説明】[Explanation of symbols]

1 コンパレータ回路 2 タイミング発生器 3 パターン発生器 4 論理比較回路 5 半導体装置 6 半導体装置の出力A 7 H比較電圧値 8 L比較電圧値 9 判定タイミング 10 期待値パターン 11 良否判定結果 12 ディレー制御回路 13 タイミング検出回路 14 出力エッジタイミング 15 判定タイミングディレー値 16 半導体装置の出力B DESCRIPTION OF SYMBOLS 1 Comparator circuit 2 Timing generator 3 Pattern generator 4 Logical comparison circuit 5 Semiconductor device 6 Output of semiconductor device A 7 H comparison voltage value 8 L comparison voltage value 9 Judgment timing 10 Expected value pattern 11 Pass / fail judgment result 12 Delay control circuit 13 Timing detection circuit 14 Output edge timing 15 Judgment timing delay value 16 Output B of semiconductor device

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 半導体装置の出力エッジタイミングを検
出するタイミング検出回路と、前記出力エッジタイミン
グに判定タイミングディレー値を付加するディレー制御
回路と、このディレー制御回路により設定された判定タ
イミングを発生するタイミング発生器と、前記判定タイ
ミングで前記半導体装置の出力と比較電圧とを比較する
コンパレータ回路と、前記判定タイミングで前記コンパ
レータ回路からの比較値とパターン発生器からの期待値
の論理比較を行う論理比較回路を備えた半導体検査装
置。
1. A timing detection circuit for detecting an output edge timing of a semiconductor device, a delay control circuit for adding a judgment timing delay value to the output edge timing, and a timing for generating a judgment timing set by the delay control circuit A generator, a comparator circuit for comparing the output of the semiconductor device with a comparison voltage at the determination timing, and a logical comparison for performing a logical comparison between a comparison value from the comparator circuit and an expected value from the pattern generator at the determination timing A semiconductor inspection device equipped with a circuit.
JP9104124A 1997-04-22 1997-04-22 Semiconductor inspection device Pending JPH10300817A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9104124A JPH10300817A (en) 1997-04-22 1997-04-22 Semiconductor inspection device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9104124A JPH10300817A (en) 1997-04-22 1997-04-22 Semiconductor inspection device

Publications (1)

Publication Number Publication Date
JPH10300817A true JPH10300817A (en) 1998-11-13

Family

ID=14372384

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9104124A Pending JPH10300817A (en) 1997-04-22 1997-04-22 Semiconductor inspection device

Country Status (1)

Country Link
JP (1) JPH10300817A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007248421A (en) * 2006-03-20 2007-09-27 Matsushita Electric Ind Co Ltd Semiconductor integrated circuit

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007248421A (en) * 2006-03-20 2007-09-27 Matsushita Electric Ind Co Ltd Semiconductor integrated circuit
JP4705493B2 (en) * 2006-03-20 2011-06-22 パナソニック株式会社 Semiconductor integrated circuit

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