JPH10242573A - 窒化物半導体の反射鏡端面の形成方法 - Google Patents

窒化物半導体の反射鏡端面の形成方法

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Publication number
JPH10242573A
JPH10242573A JP4023197A JP4023197A JPH10242573A JP H10242573 A JPH10242573 A JP H10242573A JP 4023197 A JP4023197 A JP 4023197A JP 4023197 A JP4023197 A JP 4023197A JP H10242573 A JPH10242573 A JP H10242573A
Authority
JP
Japan
Prior art keywords
face
ion beam
gan
etching
nitride semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4023197A
Other languages
English (en)
Japanese (ja)
Other versions
JPH10242573A5 (cg-RX-API-DMAC7.html
Inventor
Takayuki Yuasa
貴之 湯浅
Yoshihiro Ueda
吉裕 上田
Kazuhiko Inoguchi
和彦 猪口
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP4023197A priority Critical patent/JPH10242573A/ja
Publication of JPH10242573A publication Critical patent/JPH10242573A/ja
Publication of JPH10242573A5 publication Critical patent/JPH10242573A5/ja
Pending legal-status Critical Current

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  • Semiconductor Lasers (AREA)
  • Drying Of Semiconductors (AREA)
JP4023197A 1997-02-25 1997-02-25 窒化物半導体の反射鏡端面の形成方法 Pending JPH10242573A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4023197A JPH10242573A (ja) 1997-02-25 1997-02-25 窒化物半導体の反射鏡端面の形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4023197A JPH10242573A (ja) 1997-02-25 1997-02-25 窒化物半導体の反射鏡端面の形成方法

Publications (2)

Publication Number Publication Date
JPH10242573A true JPH10242573A (ja) 1998-09-11
JPH10242573A5 JPH10242573A5 (cg-RX-API-DMAC7.html) 2005-01-27

Family

ID=12574967

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4023197A Pending JPH10242573A (ja) 1997-02-25 1997-02-25 窒化物半導体の反射鏡端面の形成方法

Country Status (1)

Country Link
JP (1) JPH10242573A (cg-RX-API-DMAC7.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111129955A (zh) * 2019-12-04 2020-05-08 中国电子科技集团公司第十三研究所 一种低温等离子体干法刻蚀方法及其应用

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111129955A (zh) * 2019-12-04 2020-05-08 中国电子科技集团公司第十三研究所 一种低温等离子体干法刻蚀方法及其应用

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