JPH10242573A5 - - Google Patents

Info

Publication number
JPH10242573A5
JPH10242573A5 JP1997040231A JP4023197A JPH10242573A5 JP H10242573 A5 JPH10242573 A5 JP H10242573A5 JP 1997040231 A JP1997040231 A JP 1997040231A JP 4023197 A JP4023197 A JP 4023197A JP H10242573 A5 JPH10242573 A5 JP H10242573A5
Authority
JP
Japan
Prior art keywords
nitride semiconductor
facet
forming
face
ion beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1997040231A
Other languages
English (en)
Japanese (ja)
Other versions
JPH10242573A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP4023197A priority Critical patent/JPH10242573A/ja
Priority claimed from JP4023197A external-priority patent/JPH10242573A/ja
Publication of JPH10242573A publication Critical patent/JPH10242573A/ja
Publication of JPH10242573A5 publication Critical patent/JPH10242573A5/ja
Pending legal-status Critical Current

Links

JP4023197A 1997-02-25 1997-02-25 窒化物半導体の反射鏡端面の形成方法 Pending JPH10242573A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4023197A JPH10242573A (ja) 1997-02-25 1997-02-25 窒化物半導体の反射鏡端面の形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4023197A JPH10242573A (ja) 1997-02-25 1997-02-25 窒化物半導体の反射鏡端面の形成方法

Publications (2)

Publication Number Publication Date
JPH10242573A JPH10242573A (ja) 1998-09-11
JPH10242573A5 true JPH10242573A5 (cg-RX-API-DMAC7.html) 2005-01-27

Family

ID=12574967

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4023197A Pending JPH10242573A (ja) 1997-02-25 1997-02-25 窒化物半導体の反射鏡端面の形成方法

Country Status (1)

Country Link
JP (1) JPH10242573A (cg-RX-API-DMAC7.html)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111129955B (zh) * 2019-12-04 2021-05-18 中国电子科技集团公司第十三研究所 一种低温等离子体干法刻蚀方法及其应用

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