JPH10237639A - 集積回路用バリア膜を作成するスパッタリング装置 - Google Patents

集積回路用バリア膜を作成するスパッタリング装置

Info

Publication number
JPH10237639A
JPH10237639A JP9055550A JP5555097A JPH10237639A JP H10237639 A JPH10237639 A JP H10237639A JP 9055550 A JP9055550 A JP 9055550A JP 5555097 A JP5555097 A JP 5555097A JP H10237639 A JPH10237639 A JP H10237639A
Authority
JP
Japan
Prior art keywords
substrate
sputtering
titanium
chamber
annealing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9055550A
Other languages
English (en)
Japanese (ja)
Other versions
JPH10237639A5 (enExample
Inventor
Masahiko Kobayashi
正彦 小林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Anelva Corp
Original Assignee
Anelva Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Anelva Corp filed Critical Anelva Corp
Priority to JP9055550A priority Critical patent/JPH10237639A/ja
Priority to TW086115675A priority patent/TW350978B/zh
Priority to KR1019970054594A priority patent/KR19980070035A/ko
Publication of JPH10237639A publication Critical patent/JPH10237639A/ja
Publication of JPH10237639A5 publication Critical patent/JPH10237639A5/ja
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
    • C23C28/34—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
    • C23C8/08—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases only one element being applied
    • C23C8/24—Nitriding

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP9055550A 1997-02-24 1997-02-24 集積回路用バリア膜を作成するスパッタリング装置 Pending JPH10237639A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP9055550A JPH10237639A (ja) 1997-02-24 1997-02-24 集積回路用バリア膜を作成するスパッタリング装置
TW086115675A TW350978B (en) 1997-02-24 1997-10-23 Splash coating device for manufacturing of IC barrier films
KR1019970054594A KR19980070035A (ko) 1997-02-24 1997-10-24 집적회로용 배리어막을 작성하는 스퍼터링장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9055550A JPH10237639A (ja) 1997-02-24 1997-02-24 集積回路用バリア膜を作成するスパッタリング装置

Publications (2)

Publication Number Publication Date
JPH10237639A true JPH10237639A (ja) 1998-09-08
JPH10237639A5 JPH10237639A5 (enExample) 2005-01-13

Family

ID=13001823

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9055550A Pending JPH10237639A (ja) 1997-02-24 1997-02-24 集積回路用バリア膜を作成するスパッタリング装置

Country Status (3)

Country Link
JP (1) JPH10237639A (enExample)
KR (1) KR19980070035A (enExample)
TW (1) TW350978B (enExample)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0758148A3 (en) * 1995-08-07 1999-08-18 Applied Materials, Inc. Method and apparatus for forming electrical contacts in multi-layer integrated circuits
JP2003203975A (ja) * 2001-12-22 2003-07-18 Hynix Semiconductor Inc 半導体素子の金属配線形成方法
JP2011500967A (ja) * 2007-10-26 2011-01-06 オーツェー・エリコン・バルザース・アーゲー ３次元半導体パッケージングにおける貫通シリコンビアのメタライゼーションへのｈｉｐｉｍｓの適用
JP2013058565A (ja) * 2011-09-07 2013-03-28 Ulvac Japan Ltd バリアメタル層の形成方法、及び、バリアメタル層の形成装置
US9659758B2 (en) 2005-03-22 2017-05-23 Honeywell International Inc. Coils utilized in vapor deposition applications and methods of production
US11183373B2 (en) 2017-10-11 2021-11-23 Honeywell International Inc. Multi-patterned sputter traps and methods of making
CN115074689A (zh) * 2022-07-21 2022-09-20 苏州大学 一种螺旋波等离子体反应溅射沉积制备氮化钛薄膜的方法
CN115110025A (zh) * 2022-07-20 2022-09-27 苏州大学 一种螺旋波等离子体溅射沉积氮化钨薄膜的方法

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6136095A (en) * 1995-08-07 2000-10-24 Applied Materials, Inc. Apparatus for filling apertures in a film layer on a semiconductor substrate
US6217721B1 (en) 1995-08-07 2001-04-17 Applied Materials, Inc. Filling narrow apertures and forming interconnects with a metal utilizing a crystallographically oriented liner layer
US6313027B1 (en) 1995-08-07 2001-11-06 Applied Materials, Inc. Method for low thermal budget metal filling and planarization of contacts vias and trenches
EP0758148A3 (en) * 1995-08-07 1999-08-18 Applied Materials, Inc. Method and apparatus for forming electrical contacts in multi-layer integrated circuits
JP2003203975A (ja) * 2001-12-22 2003-07-18 Hynix Semiconductor Inc 半導体素子の金属配線形成方法
US9659758B2 (en) 2005-03-22 2017-05-23 Honeywell International Inc. Coils utilized in vapor deposition applications and methods of production
JP2011500967A (ja) * 2007-10-26 2011-01-06 オーツェー・エリコン・バルザース・アーゲー ３次元半導体パッケージングにおける貫通シリコンビアのメタライゼーションへのｈｉｐｉｍｓの適用
JP2013058565A (ja) * 2011-09-07 2013-03-28 Ulvac Japan Ltd バリアメタル層の形成方法、及び、バリアメタル層の形成装置
US11183373B2 (en) 2017-10-11 2021-11-23 Honeywell International Inc. Multi-patterned sputter traps and methods of making
US12051573B2 (en) 2017-10-11 2024-07-30 Honeywell International Inc. Multi-patterned sputter traps and methods of making
CN115110025A (zh) * 2022-07-20 2022-09-27 苏州大学 一种螺旋波等离子体溅射沉积氮化钨薄膜的方法
CN115110025B (zh) * 2022-07-20 2023-10-20 苏州大学 一种螺旋波等离子体溅射沉积氮化钨薄膜的方法
CN115074689A (zh) * 2022-07-21 2022-09-20 苏州大学 一种螺旋波等离子体反应溅射沉积制备氮化钛薄膜的方法
CN115074689B (zh) * 2022-07-21 2023-06-02 苏州大学 一种螺旋波等离子体反应溅射沉积制备氮化钛薄膜的方法

Also Published As

Publication number Publication date
TW350978B (en) 1999-01-21
KR19980070035A (ko) 1998-10-26

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