JPH10233378A - 浅い溝埋込み分離処理のための高選択性スラリー - Google Patents
浅い溝埋込み分離処理のための高選択性スラリーInfo
- Publication number
- JPH10233378A JPH10233378A JP425798A JP425798A JPH10233378A JP H10233378 A JPH10233378 A JP H10233378A JP 425798 A JP425798 A JP 425798A JP 425798 A JP425798 A JP 425798A JP H10233378 A JPH10233378 A JP H10233378A
- Authority
- JP
- Japan
- Prior art keywords
- slurry
- alkalinized
- oxide
- selectivity
- nitride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002002 slurry Substances 0.000 title claims abstract description 159
- 238000000926 separation method Methods 0.000 title claims abstract description 7
- 238000012545 processing Methods 0.000 title abstract description 7
- 238000000034 method Methods 0.000 claims abstract description 38
- 238000005498 polishing Methods 0.000 claims abstract description 32
- 239000000758 substrate Substances 0.000 claims description 9
- 230000003113 alkalizing effect Effects 0.000 claims description 8
- 238000002156 mixing Methods 0.000 claims description 5
- 150000004767 nitrides Chemical class 0.000 abstract description 29
- 239000007787 solid Substances 0.000 abstract description 28
- 239000000126 substance Substances 0.000 abstract description 13
- 239000004065 semiconductor Substances 0.000 abstract description 7
- 230000004048 modification Effects 0.000 abstract description 4
- 238000012986 modification Methods 0.000 abstract description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 25
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 19
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical group [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 18
- 150000004673 fluoride salts Chemical class 0.000 description 18
- 150000003983 crown ethers Chemical class 0.000 description 14
- 235000012431 wafers Nutrition 0.000 description 14
- 229910001515 alkali metal fluoride Inorganic materials 0.000 description 13
- 150000001875 compounds Chemical class 0.000 description 13
- 239000002245 particle Substances 0.000 description 13
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 9
- 239000002585 base Substances 0.000 description 9
- 238000002955 isolation Methods 0.000 description 8
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 7
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 7
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 7
- 229910052744 lithium Inorganic materials 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
- 229910052700 potassium Inorganic materials 0.000 description 7
- 239000011591 potassium Substances 0.000 description 7
- NROKBHXJSPEDAR-UHFFFAOYSA-M potassium fluoride Chemical compound [F-].[K+] NROKBHXJSPEDAR-UHFFFAOYSA-M 0.000 description 7
- 239000000377 silicon dioxide Substances 0.000 description 7
- 229910052708 sodium Inorganic materials 0.000 description 7
- 239000011734 sodium Substances 0.000 description 7
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 6
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 6
- 230000007423 decrease Effects 0.000 description 6
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 5
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- 230000009471 action Effects 0.000 description 5
- 239000000908 ammonium hydroxide Substances 0.000 description 5
- 150000003839 salts Chemical class 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 229910052783 alkali metal Inorganic materials 0.000 description 4
- 150000001340 alkali metals Chemical class 0.000 description 4
- LDDQLRUQCUTJBB-UHFFFAOYSA-O azanium;hydrofluoride Chemical compound [NH4+].F LDDQLRUQCUTJBB-UHFFFAOYSA-O 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000003513 alkali Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- -1 fluoride ions Chemical class 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000007517 polishing process Methods 0.000 description 3
- 239000011698 potassium fluoride Substances 0.000 description 3
- 235000003270 potassium fluoride Nutrition 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 239000000725 suspension Substances 0.000 description 3
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- 239000003637 basic solution Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 241000723418 Carya Species 0.000 description 1
- 241001421711 Mithras Species 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- LDDQLRUQCUTJBB-UHFFFAOYSA-N ammonium fluoride Chemical class [NH4+].[F-] LDDQLRUQCUTJBB-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 229910021485 fumed silica Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000007373 indentation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000004807 localization Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 229910001414 potassium ion Inorganic materials 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- PUZPDOWCWNUUKD-UHFFFAOYSA-M sodium fluoride Chemical group [F-].[Na+] PUZPDOWCWNUUKD-UHFFFAOYSA-M 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Element Separation (AREA)
- Weting (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US035023 | 1993-03-22 | ||
| US3502397P | 1997-01-10 | 1997-01-10 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH10233378A true JPH10233378A (ja) | 1998-09-02 |
| JPH10233378A5 JPH10233378A5 (enExample) | 2005-08-04 |
Family
ID=21880142
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP425798A Pending JPH10233378A (ja) | 1997-01-10 | 1998-01-12 | 浅い溝埋込み分離処理のための高選択性スラリー |
Country Status (3)
| Country | Link |
|---|---|
| EP (1) | EP0853110B1 (enExample) |
| JP (1) | JPH10233378A (enExample) |
| DE (1) | DE69830676D1 (enExample) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002346912A (ja) * | 2001-05-18 | 2002-12-04 | Nippon Sheet Glass Co Ltd | 情報記録媒体用ガラス基板及びその製造方法 |
| JP2011103410A (ja) * | 2009-11-11 | 2011-05-26 | Kuraray Co Ltd | 化学的機械的研磨用スラリー |
| JP2011119405A (ja) * | 2009-12-02 | 2011-06-16 | Shin Etsu Handotai Co Ltd | シリコンウェーハ研磨用研磨剤およびシリコンウェーハの研磨方法 |
| JPWO2011058952A1 (ja) * | 2009-11-11 | 2013-04-04 | 株式会社クラレ | 化学的機械的研磨用スラリー並びにそれを用いる基板の研磨方法 |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2785614B1 (fr) * | 1998-11-09 | 2001-01-26 | Clariant France Sa | Nouveau procede de polissage mecano-chimique selectif entre une couche d'oxyde de silicium et une couche de nitrure de silicium |
| CN1422314A (zh) | 2000-04-11 | 2003-06-04 | 卡伯特微电子公司 | 用于优先除去氧化硅的系统 |
| DE10063492A1 (de) * | 2000-12-20 | 2002-06-27 | Bayer Ag | Verfahren zum chemisch-mechanischen Polieren von Isolationsschichten nach der STI-Technik bei erhöhten Temperaturen |
| KR100444302B1 (ko) * | 2001-12-29 | 2004-08-11 | 주식회사 하이닉스반도체 | 반도체 소자 제조방법 |
| US7071105B2 (en) | 2003-02-03 | 2006-07-04 | Cabot Microelectronics Corporation | Method of polishing a silicon-containing dielectric |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| HU164439B (enExample) * | 1972-06-14 | 1974-02-28 | ||
| JPS5935429A (ja) * | 1982-08-12 | 1984-02-27 | インタ−ナシヨナル ビジネス マシ−ンズ コ−ポレ−シヨン | 半導体ウエハの製造方法 |
-
1998
- 1998-01-09 EP EP19980300159 patent/EP0853110B1/en not_active Expired - Lifetime
- 1998-01-09 DE DE69830676T patent/DE69830676D1/de not_active Expired - Lifetime
- 1998-01-12 JP JP425798A patent/JPH10233378A/ja active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002346912A (ja) * | 2001-05-18 | 2002-12-04 | Nippon Sheet Glass Co Ltd | 情報記録媒体用ガラス基板及びその製造方法 |
| JP2011103410A (ja) * | 2009-11-11 | 2011-05-26 | Kuraray Co Ltd | 化学的機械的研磨用スラリー |
| JPWO2011058952A1 (ja) * | 2009-11-11 | 2013-04-04 | 株式会社クラレ | 化学的機械的研磨用スラリー並びにそれを用いる基板の研磨方法 |
| US9536752B2 (en) | 2009-11-11 | 2017-01-03 | Kuraray Co., Ltd. | Slurry for chemical mechanical polishing and polishing method for substrate using same |
| JP2011119405A (ja) * | 2009-12-02 | 2011-06-16 | Shin Etsu Handotai Co Ltd | シリコンウェーハ研磨用研磨剤およびシリコンウェーハの研磨方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| EP0853110B1 (en) | 2005-06-29 |
| DE69830676D1 (de) | 2005-08-04 |
| EP0853110A1 (en) | 1998-07-15 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Written amendment |
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| A621 | Written request for application examination |
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