JPH10233378A5 - - Google Patents

Info

Publication number
JPH10233378A5
JPH10233378A5 JP1998004257A JP425798A JPH10233378A5 JP H10233378 A5 JPH10233378 A5 JP H10233378A5 JP 1998004257 A JP1998004257 A JP 1998004257A JP 425798 A JP425798 A JP 425798A JP H10233378 A5 JPH10233378 A5 JP H10233378A5
Authority
JP
Japan
Prior art keywords
slurry
alkalized
alkalinized
range
base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1998004257A
Other languages
English (en)
Japanese (ja)
Other versions
JPH10233378A (ja
Filing date
Publication date
Application filed filed Critical
Publication of JPH10233378A publication Critical patent/JPH10233378A/ja
Publication of JPH10233378A5 publication Critical patent/JPH10233378A5/ja
Pending legal-status Critical Current

Links

JP425798A 1997-01-10 1998-01-12 浅い溝埋込み分離処理のための高選択性スラリー Pending JPH10233378A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US035023 1993-03-22
US3502397P 1997-01-10 1997-01-10

Publications (2)

Publication Number Publication Date
JPH10233378A JPH10233378A (ja) 1998-09-02
JPH10233378A5 true JPH10233378A5 (enExample) 2005-08-04

Family

ID=21880142

Family Applications (1)

Application Number Title Priority Date Filing Date
JP425798A Pending JPH10233378A (ja) 1997-01-10 1998-01-12 浅い溝埋込み分離処理のための高選択性スラリー

Country Status (3)

Country Link
EP (1) EP0853110B1 (enExample)
JP (1) JPH10233378A (enExample)
DE (1) DE69830676D1 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2785614B1 (fr) * 1998-11-09 2001-01-26 Clariant France Sa Nouveau procede de polissage mecano-chimique selectif entre une couche d'oxyde de silicium et une couche de nitrure de silicium
AU2001253308A1 (en) 2000-04-11 2001-10-23 Cabot Microelectronics Corporation System for the preferential removal of silicon oxide
DE10063492A1 (de) * 2000-12-20 2002-06-27 Bayer Ag Verfahren zum chemisch-mechanischen Polieren von Isolationsschichten nach der STI-Technik bei erhöhten Temperaturen
JP2002346912A (ja) * 2001-05-18 2002-12-04 Nippon Sheet Glass Co Ltd 情報記録媒体用ガラス基板及びその製造方法
KR100444302B1 (ko) * 2001-12-29 2004-08-11 주식회사 하이닉스반도체 반도체 소자 제조방법
US7071105B2 (en) 2003-02-03 2006-07-04 Cabot Microelectronics Corporation Method of polishing a silicon-containing dielectric
JP5878020B2 (ja) * 2009-11-11 2016-03-08 株式会社クラレ 化学的機械的研磨用スラリー並びにそれを用いる基板の研磨方法
JP5481166B2 (ja) * 2009-11-11 2014-04-23 株式会社クラレ 化学的機械的研磨用スラリー
JP5321430B2 (ja) * 2009-12-02 2013-10-23 信越半導体株式会社 シリコンウェーハ研磨用研磨剤およびシリコンウェーハの研磨方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
HU164439B (enExample) * 1972-06-14 1974-02-28
JPS5935429A (ja) * 1982-08-12 1984-02-27 インタ−ナシヨナル　ビジネス　マシ−ンズ　コ−ポレ−シヨン 半導体ウエハの製造方法

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