JPH10167898A5 - - Google Patents

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Publication number
JPH10167898A5
JPH10167898A5 JP1996332356A JP33235696A JPH10167898A5 JP H10167898 A5 JPH10167898 A5 JP H10167898A5 JP 1996332356 A JP1996332356 A JP 1996332356A JP 33235696 A JP33235696 A JP 33235696A JP H10167898 A5 JPH10167898 A5 JP H10167898A5
Authority
JP
Japan
Prior art keywords
single crystal
semi
producing
gaas single
crystal according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1996332356A
Other languages
English (en)
Japanese (ja)
Other versions
JP4120016B2 (ja
JPH10167898A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP33235696A priority Critical patent/JP4120016B2/ja
Priority claimed from JP33235696A external-priority patent/JP4120016B2/ja
Publication of JPH10167898A publication Critical patent/JPH10167898A/ja
Publication of JPH10167898A5 publication Critical patent/JPH10167898A5/ja
Application granted granted Critical
Publication of JP4120016B2 publication Critical patent/JP4120016B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP33235696A 1996-12-12 1996-12-12 半絶縁性ＧａＡｓ単結晶の製造方法 Expired - Fee Related JP4120016B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP33235696A JP4120016B2 (ja) 1996-12-12 1996-12-12 半絶縁性ＧａＡｓ単結晶の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP33235696A JP4120016B2 (ja) 1996-12-12 1996-12-12 半絶縁性ＧａＡｓ単結晶の製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2006289021A Division JP2007106669A (ja) 2006-10-24 2006-10-24 半絶縁性ＧａＡｓ単結晶の製造方法

Publications (3)

Publication Number Publication Date
JPH10167898A JPH10167898A (ja) 1998-06-23
JPH10167898A5 true JPH10167898A5 (enrdf_load_stackoverflow) 2005-04-07
JP4120016B2 JP4120016B2 (ja) 2008-07-16

Family

ID=18254050

Family Applications (1)

Application Number Title Priority Date Filing Date
JP33235696A Expired - Fee Related JP4120016B2 (ja) 1996-12-12 1996-12-12 半絶縁性ＧａＡｓ単結晶の製造方法

Country Status (1)

Country Link
JP (1) JP4120016B2 (enrdf_load_stackoverflow)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3596337B2 (ja) 1998-03-25 2004-12-02 住友電気工業株式会社 化合物半導体結晶の製造方法
KR20010091386A (ko) * 2000-03-15 2001-10-23 오명환 ＶＧＦ법에 의한 ＧａＡｓ 단결정 성장시 단결정 확보를위한 Ａｓ 증기압 제어방법
CN1543518A (zh) 2001-07-05 2004-11-03 Axt 以坚固支座、碳掺杂和电阻率控制及温度梯度控制来生长半导体晶体的方法和装置
JP2005314139A (ja) * 2004-04-27 2005-11-10 Sumitomo Electric Ind Ltd 化合物半導体単結晶の製造方法
JP5110026B2 (ja) * 2009-04-03 2012-12-26 住友電気工業株式会社 Ｉｉｉ−ｖ族化合物半導体結晶の製造方法
JP2010059052A (ja) * 2009-10-23 2010-03-18 Sumitomo Electric Ind Ltd 半絶縁性ＧａＡｓ単結晶の製造方法および装置
EP4063541A1 (en) * 2017-07-04 2022-09-28 Sumitomo Electric Industries, Ltd. Gallium arsenide crystal body and gallium arsenide crystal substrate
CN108060454B (zh) * 2017-12-15 2020-08-28 广东先导先进材料股份有限公司 一种vgf法制备砷化镓晶体的装置及方法
CN110629289B (zh) * 2019-11-01 2021-02-23 中国电子科技集团公司第四十六研究所 一种低亮暗点的4和6英寸半绝缘砷化镓抛光片制备方法
CN114635180B (zh) * 2022-05-19 2022-08-09 山西中科晶电信息材料有限公司 一种半绝缘砷化镓单晶体及其制备方法和生长装置

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