JP4120016B2 - 半絶縁性ＧａＡｓ単結晶の製造方法 - Google Patents
半絶縁性ＧａＡｓ単結晶の製造方法 Download PDFInfo
- Publication number
- JP4120016B2 JP4120016B2 JP33235696A JP33235696A JP4120016B2 JP 4120016 B2 JP4120016 B2 JP 4120016B2 JP 33235696 A JP33235696 A JP 33235696A JP 33235696 A JP33235696 A JP 33235696A JP 4120016 B2 JP4120016 B2 JP 4120016B2
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- carbon
- crystal
- gaas single
- semi
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000013078 crystal Substances 0.000 title claims description 100
- 229910001218 Gallium arsenide Inorganic materials 0.000 title claims description 47
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 33
- 229910052799 carbon Inorganic materials 0.000 claims description 31
- 239000002994 raw material Substances 0.000 claims description 26
- 229910052760 oxygen Inorganic materials 0.000 claims description 25
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 23
- 239000001301 oxygen Substances 0.000 claims description 23
- 238000010438 heat treatment Methods 0.000 claims description 20
- 239000000463 material Substances 0.000 claims description 11
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims description 9
- 150000002927 oxygen compounds Chemical class 0.000 claims description 7
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 claims description 5
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 claims description 4
- 229910002092 carbon dioxide Inorganic materials 0.000 claims description 4
- 239000001569 carbon dioxide Substances 0.000 claims description 4
- 229910002091 carbon monoxide Inorganic materials 0.000 claims description 4
- 150000001875 compounds Chemical class 0.000 claims description 4
- 238000001816 cooling Methods 0.000 claims description 4
- 229910002804 graphite Inorganic materials 0.000 claims description 4
- 239000010439 graphite Substances 0.000 claims description 4
- 239000000565 sealant Substances 0.000 claims description 4
- 238000000034 method Methods 0.000 description 30
- 239000007789 gas Substances 0.000 description 17
- 239000003708 ampul Substances 0.000 description 13
- 239000010453 quartz Substances 0.000 description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
- 238000009434 installation Methods 0.000 description 9
- 238000007789 sealing Methods 0.000 description 8
- 230000008020 evaporation Effects 0.000 description 7
- 238000001704 evaporation Methods 0.000 description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- 238000004364 calculation method Methods 0.000 description 6
- 239000007787 solid Substances 0.000 description 5
- 230000008018 melting Effects 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 229910052785 arsenic Inorganic materials 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- -1 Ga 2 O 3 Chemical class 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 230000008014 freezing Effects 0.000 description 2
- 238000007710 freezing Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 241001391944 Commicarpus scandens Species 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910002090 carbon oxide Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000008393 encapsulating agent Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33235696A JP4120016B2 (ja) | 1996-12-12 | 1996-12-12 | 半絶縁性ＧａＡｓ単結晶の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33235696A JP4120016B2 (ja) | 1996-12-12 | 1996-12-12 | 半絶縁性ＧａＡｓ単結晶の製造方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006289021A Division JP2007106669A (ja) | 2006-10-24 | 2006-10-24 | 半絶縁性ＧａＡｓ単結晶の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPH10167898A JPH10167898A (ja) | 1998-06-23 |
| JPH10167898A5 JPH10167898A5 (enrdf_load_stackoverflow) | 2005-04-07 |
| JP4120016B2 true JP4120016B2 (ja) | 2008-07-16 |
Family
ID=18254050
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP33235696A Expired - Fee Related JP4120016B2 (ja) | 1996-12-12 | 1996-12-12 | 半絶縁性ＧａＡｓ単結晶の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4120016B2 (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010059052A (ja) * | 2009-10-23 | 2010-03-18 | Sumitomo Electric Ind Ltd | 半絶縁性ＧａＡｓ単結晶の製造方法および装置 |
| TWI733008B (zh) * | 2017-07-04 | 2021-07-11 | 日商住友電氣工業股份有限公司 | 砷化鎵晶體及砷化鎵結晶基板 |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3596337B2 (ja) | 1998-03-25 | 2004-12-02 | 住友電気工業株式会社 | 化合物半導体結晶の製造方法 |
| KR20010091386A (ko) * | 2000-03-15 | 2001-10-23 | 오명환 | ＶＧＦ법에 의한 ＧａＡｓ 단결정 성장시 단결정 확보를위한 Ａｓ 증기압 제어방법 |
| CN102220628A (zh) * | 2001-07-05 | 2011-10-19 | Axt公司 | 生长半导体晶体的装置 |
| JP2005314139A (ja) * | 2004-04-27 | 2005-11-10 | Sumitomo Electric Ind Ltd | 化合物半導体単結晶の製造方法 |
| JP5110026B2 (ja) * | 2009-04-03 | 2012-12-26 | 住友電気工業株式会社 | Ｉｉｉ−ｖ族化合物半導体結晶の製造方法 |
| CN108060454B (zh) * | 2017-12-15 | 2020-08-28 | 广东先导先进材料股份有限公司 | 一种vgf法制备砷化镓晶体的装置及方法 |
| CN110629289B (zh) * | 2019-11-01 | 2021-02-23 | 中国电子科技集团公司第四十六研究所 | 一种低亮暗点的4和6英寸半绝缘砷化镓抛光片制备方法 |
| CN114635180B (zh) * | 2022-05-19 | 2022-08-09 | 山西中科晶电信息材料有限公司 | 一种半绝缘砷化镓单晶体及其制备方法和生长装置 |
-
1996
- 1996-12-12 JP JP33235696A patent/JP4120016B2/ja not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010059052A (ja) * | 2009-10-23 | 2010-03-18 | Sumitomo Electric Ind Ltd | 半絶縁性ＧａＡｓ単結晶の製造方法および装置 |
| TWI733008B (zh) * | 2017-07-04 | 2021-07-11 | 日商住友電氣工業股份有限公司 | 砷化鎵晶體及砷化鎵結晶基板 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH10167898A (ja) | 1998-06-23 |
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