JPH1012774A - Epoxy resin compound for sealing semiconductor and semiconductor device - Google Patents
Epoxy resin compound for sealing semiconductor and semiconductor deviceInfo
- Publication number
- JPH1012774A JPH1012774A JP16630996A JP16630996A JPH1012774A JP H1012774 A JPH1012774 A JP H1012774A JP 16630996 A JP16630996 A JP 16630996A JP 16630996 A JP16630996 A JP 16630996A JP H1012774 A JPH1012774 A JP H1012774A
- Authority
- JP
- Japan
- Prior art keywords
- epoxy resin
- alumina particles
- semiconductor
- resin composition
- particles
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Compositions Of Macromolecular Compounds (AREA)
- Epoxy Resins (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、熱伝導性に優れる
硬化物が得られる半導体封止用エポキシ樹脂組成物及び
この半導体封止用エポキシ樹脂組成物を用いて封止した
半導体装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an epoxy resin composition for semiconductor encapsulation from which a cured product having excellent thermal conductivity can be obtained, and a semiconductor device encapsulated with the epoxy resin composition for encapsulating semiconductor.
【０００２】[0002]
【従来の技術】パワートランジスターやパワーＩＣ等を
搭載する半導体装置に使用される半導体封止用エポキシ
樹脂組成物に対しては、高熱伝導率の硬化物が得られる
性能が要求される。従来、高熱伝導率を達成するため
に、無機充填材である結晶シリカの充填量を増す方法が
行われていた。しかし、結晶シリカの充填量を増した場
合には成形性が損なわれる問題が生じるため、結晶シリ
カの充填量を増す方法で得られる熱伝導率の改善には限
度があった。アルミナや窒化珪素等の結晶シリカ以外の
高熱伝導性の無機充填材を使用することも高熱伝導率の
達成に有効であるが、アルミナ以外のものは純度が悪く
信頼性が劣るという問題や高コストであるという問題が
あり、また、アルミナを使用した半導体封止用エポキシ
樹脂組成物は金型摩耗性が大きいという問題があった。2. Description of the Related Art An epoxy resin composition for semiconductor encapsulation used in a semiconductor device on which a power transistor, a power IC or the like is mounted is required to have a performance capable of obtaining a cured product having a high thermal conductivity. Conventionally, in order to achieve high thermal conductivity, a method of increasing the filling amount of crystalline silica, which is an inorganic filler, has been used. However, when the filling amount of the crystalline silica is increased, there is a problem that the formability is impaired. Therefore, there is a limit to the improvement of the thermal conductivity obtained by the method of increasing the filling amount of the crystalline silica. The use of inorganic fillers with high thermal conductivity other than crystalline silica such as alumina and silicon nitride is also effective in achieving high thermal conductivity. However, materials other than alumina have poor purity and poor reliability, and have high costs. In addition, the epoxy resin composition for semiconductor encapsulation using alumina has a problem that mold abrasion is large.
【０００３】[0003]
【発明が解決しようとする課題】本発明は上記の事情に
鑑みてなされたものであって、本発明の目的とするとこ
ろは、無機充填材としてアルミナを使用していて、熱伝
導性に優れる硬化物が得られる半導体封止用エポキシ樹
脂組成物であって、成形性が優れ、かつ、金型摩耗性が
小さい半導体封止用エポキシ樹脂組成物及びこの半導体
封止用エポキシ樹脂組成物を用いて封止した半導体装置
を提供することにある。DISCLOSURE OF THE INVENTION The present invention has been made in view of the above circumstances, and an object of the present invention is to use alumina as an inorganic filler and have excellent thermal conductivity. An epoxy resin composition for semiconductor encapsulation from which a cured product is obtained, which is excellent in moldability, and has a small mold abrasion property, using the epoxy resin composition for semiconductor encapsulation and the epoxy resin composition for semiconductor encapsulation. To provide a sealed semiconductor device.
【０００４】[0004]
【課題を解決するための手段】本発明の請求項１に係る
半導体封止用エポキシ樹脂組成物は、エポキシ樹脂と、
硬化剤と、アルミナ粒子及びシリカ粒子を含有する無機
充填材を含有してなる半導体封止用エポキシ樹脂組成物
において、粗粒アルミナ粒子及び／又は球状アルミナ粒
子を含有し、かつ、アルミナ粒子とシリカ粒子合計量に
対してアルミナ粒子を２〜５０重量％含有することを特
徴とする。The epoxy resin composition for semiconductor encapsulation according to claim 1 of the present invention comprises: an epoxy resin;
An epoxy resin composition for semiconductor encapsulation comprising a curing agent and an inorganic filler containing alumina particles and silica particles, comprising coarse alumina particles and / or spherical alumina particles, and comprising alumina particles and silica It is characterized by containing 2 to 50% by weight of alumina particles based on the total amount of the particles.
【０００５】本発明の請求項２に係る半導体封止用エポ
キシ樹脂組成物は、請求項１記載の半導体封止用エポキ
シ樹脂組成物において、粗粒アルミナ粒子の平均粒径が
１〜７μｍであり、球状アルミナ粒子の平均粒径が１０
〜３０μｍであることを特徴とする。According to a second aspect of the present invention, there is provided an epoxy resin composition for semiconductor encapsulation according to the first aspect, wherein the average particle size of the coarse alumina particles is 1 to 7 μm. , The average particle size of the spherical alumina particles is 10
３０30 μm.
【０００６】本発明の請求項３に係る半導体封止用エポ
キシ樹脂組成物は、請求項１又は請求項２に記載の半導
体封止用エポキシ樹脂組成物において、アルミナ粒子と
シリカ粒子合計量に対して、平均粒径が１〜１０μｍの
球状シリカ粒子を２〜５重量％含有することを特徴とす
る。The epoxy resin composition for encapsulating a semiconductor according to claim 3 of the present invention is the epoxy resin composition for encapsulating a semiconductor according to claim 1 or 2, based on the total amount of alumina particles and silica particles. And containing 2 to 5% by weight of spherical silica particles having an average particle size of 1 to 10 μm.
【０００７】本発明の請求項４に係る半導体封止用エポ
キシ樹脂組成物は、請求項１から請求項３までのいずれ
かに記載の半導体封止用エポキシ樹脂組成物において、
アルミナ粒子とシリカ粒子合計量に対して、平均粒径が
１００〜１２０μｍの結晶シリカ粒子を５〜２０重量％
含有することを特徴とする。The epoxy resin composition for encapsulating a semiconductor according to claim 4 of the present invention is the epoxy resin composition for encapsulating a semiconductor according to any one of claims 1 to 3,
5 to 20% by weight of crystalline silica particles having an average particle size of 100 to 120 μm based on the total amount of alumina particles and silica particles
It is characterized by containing.
【０００８】本発明の請求項５に係る半導体装置は、請
求項１から請求項４までのいずれかに記載の半導体封止
用エポキシ樹脂組成物を用いて、半導体チップを封止し
てなる半導体装置である。According to a fifth aspect of the present invention, there is provided a semiconductor device in which a semiconductor chip is encapsulated by using the epoxy resin composition for encapsulating a semiconductor according to any one of the first to fourth aspects. Device.
【０００９】本発明の半導体封止用エポキシ樹脂組成物
で、粗粒アルミナ粒子及び／又は球状アルミナ粒子を含
有し、かつ、アルミナ粒子とシリカ粒子合計量に対して
アルミナ粒子を２〜５０重量％含有していることは、熱
伝導性に優れる硬化物が得られ、成形性が優れ、かつ、
金型摩耗性が小さいという特性をエポキシ樹脂組成物に
付与する働きをする。The epoxy resin composition for semiconductor encapsulation of the present invention contains coarse alumina particles and / or spherical alumina particles, and 2 to 50% by weight of alumina particles based on the total amount of alumina particles and silica particles. Containing a cured product with excellent thermal conductivity, excellent moldability, and
It functions to impart the property of low mold wear to the epoxy resin composition.
【００１０】[0010]
【発明の実施の形態】本発明の半導体封止用エポキシ樹
脂組成物は、エポキシ樹脂と、硬化剤と、アルミナ粒子
及びシリカ粒子を含有する無機充填材を含有している。
本発明で使用するエポキシ樹脂としては、分子内に２個
以上のエポキシ基を有する化合物であればよく、例えば
オルソクレゾールノボラック型エポキシ樹脂、ビスフェ
ノールＡ型エポキシ樹脂、ビフェニル型エポキシ樹脂、
ナフタレン型エポキシ樹脂、ジシクロペンタジエン骨格
を持つエポキシ樹脂等が挙げられ、これらを単独で用い
ても、２種以上を併用してもよい。なお、下記式（ａ）
で表わされるビフェニル型エポキシ樹脂を用いると、成
形時の粘度を低下させることができ、成形性が向上する
ので好ましい。式（ａ）中のＲ1 〜Ｒ4 はそれぞれ水素
又はメチル基を表わす。DESCRIPTION OF THE PREFERRED EMBODIMENTS The epoxy resin composition for semiconductor encapsulation of the present invention contains an epoxy resin, a curing agent, and an inorganic filler containing alumina particles and silica particles.
The epoxy resin used in the present invention may be a compound having two or more epoxy groups in a molecule, for example, an orthocresol novolak type epoxy resin, a bisphenol A type epoxy resin, a biphenyl type epoxy resin,
Examples thereof include a naphthalene-type epoxy resin and an epoxy resin having a dicyclopentadiene skeleton. These may be used alone or in combination of two or more. The following equation (a)
It is preferable to use a biphenyl type epoxy resin represented by the following formula, since the viscosity at the time of molding can be reduced and the moldability is improved. R 1 to R 4 in the formula (a) each represent hydrogen or a methyl group.
【００１１】[0011]
【化１】 Embedded image
【００１２】また、エポキシ樹脂として下記式（ｂ）で
表わされるジシクロペンタジエン骨格を持つエポキシ樹
脂を含有させると低吸湿化された硬化物が得られるの
で、吸湿信頼性及び吸湿半田クラック等の性能が向上で
きるので好ましい。式（ｂ）中のｍは０又は正の整数を
表わす。When an epoxy resin having a dicyclopentadiene skeleton represented by the following formula (b) is contained as an epoxy resin, a cured product having low moisture absorption can be obtained. Therefore, moisture absorption reliability and performance such as moisture absorption solder cracks can be obtained. It is preferable because it is possible to improve. M in the formula (b) represents 0 or a positive integer.
【００１３】[0013]
【化２】 Embedded image
【００１４】本発明で使用する硬化剤としては、エポキ
シ樹脂と反応してエポキシ樹脂を硬化させるものであれ
ば特に限定するものではなく、例えばフェノールノボラ
ック樹脂、クレゾールノボラック樹脂、フェノール類や
ナフトール類とｐ−キシレンの反応物等のフェノール性
水酸基を有するフェノール系硬化剤や、アミン系硬化剤
や、酸無水物等が挙げられる。これら硬化剤は単独で用
いても、２種以上を併用してもよい。また、硬化剤とし
てフェノール系硬化剤を用いた場合、硬化物の吸湿率を
低くできるので好ましい。硬化剤の配合割合について
は、通常エポキシ樹脂に対し、当量比で０．１〜１０の
範囲で配合するのが所望する性能を得るためには好まし
い。The curing agent used in the present invention is not particularly limited as long as it reacts with the epoxy resin to cure the epoxy resin. Examples of the curing agent include phenol novolak resins, cresol novolak resins, phenols and naphthols. Examples thereof include a phenol-based curing agent having a phenolic hydroxyl group such as a reaction product of p-xylene, an amine-based curing agent, and an acid anhydride. These curing agents may be used alone or in combination of two or more. Further, it is preferable to use a phenol-based curing agent as the curing agent because the moisture absorption of the cured product can be reduced. As for the mixing ratio of the curing agent, it is usually preferable to mix the epoxy resin in an equivalent ratio of 0.1 to 10 in order to obtain desired performance.
【００１５】本発明で使用する無機充填材は、アルミナ
粒子及びシリカ粒子を含有していて、かつ、粗粒アルミ
ナ粒子及び／又は球状アルミナ粒子を含有し、さらに、
アルミナ粒子とシリカ粒子合計量に対してアルミナ粒子
を２〜５０重量％含有しているが重要である。２重量％
未満の場合には得られる硬化物の熱伝導性が不十分にな
ると共に結晶シリカ粒子の充填量が多い場合には成形性
が悪くなるという問題があり、また５０重量％を越える
と、金型摩耗性が悪くなるという問題が生じる。The inorganic filler used in the present invention contains alumina particles and silica particles, and contains coarse alumina particles and / or spherical alumina particles.
It is important to contain 2 to 50% by weight of alumina particles based on the total amount of alumina particles and silica particles. 2% by weight
If the amount is less than 50% by weight, the heat conductivity of the obtained cured product becomes insufficient, and if the amount of the crystalline silica particles is large, the moldability deteriorates. There arises a problem that abrasion deteriorates.
【００１６】粗粒アルミナ粒子の平均粒径は１〜７μｍ
であることが好ましく、１μｍ未満では溶融粘度が上昇
し、成形性が悪くなる恐れがあり、７μｍを越えると金
型摩耗性が大きくなる傾向がある。また、球状アルミナ
粒子の平均粒径は１０〜３０μｍであることが好まし
く、１０μｍ未満では溶融粘度が上昇し、成形性が悪く
なる恐れがあり、３０μｍを越えると金型摩耗性が大き
くなる傾向がある。The average particle size of the coarse alumina particles is 1 to 7 μm.
If it is less than 1 μm, the melt viscosity may increase and moldability may be deteriorated. If it exceeds 7 μm, mold wear tends to increase. Further, the average particle size of the spherical alumina particles is preferably 10 to 30 μm, and if it is less than 10 μm, the melt viscosity may increase, and moldability may be deteriorated. If it exceeds 30 μm, the mold abrasion tends to increase. is there.
【００１７】本発明で使用する無機充填材中に平均粒径
が１〜１０μｍの球状シリカ粒子を、アルミナ粒子とシ
リカ粒子合計量に対して、２〜５重量％含有させると、
成形時のバリ特性が良好となるので好ましい。When the inorganic filler used in the present invention contains spherical silica particles having an average particle diameter of 1 to 10 μm in an amount of 2 to 5% by weight based on the total amount of the alumina particles and the silica particles,
It is preferable because burr characteristics during molding are improved.
【００１８】本発明で使用する無機充填材中に平均粒径
が１００〜１２０μｍの結晶シリカ粒子を、アルミナ粒
子とシリカ粒子合計量に対して、５〜２０重量％含有さ
せると、成形性を示す指標であるスパイラルフローの値
が大きくなり、良好な成形性を有する樹脂組成物が得ら
れるようになるので好ましい。When the inorganic filler used in the present invention contains crystalline silica particles having an average particle size of 100 to 120 μm in an amount of 5 to 20% by weight based on the total amount of the alumina particles and the silica particles, moldability is exhibited. It is preferable because the value of the spiral flow, which is an index, becomes large and a resin composition having good moldability can be obtained.
【００１９】本発明の半導体封止用エポキシ樹脂組成物
には、必要に応じて、硬化促進剤、着色剤、難燃剤、離
型剤、低応力化剤等を配合することができる。また、本
発明の半導体封止用エポキシ樹脂組成物は各原材料をミ
キサー等を用いて混合した後、ロール、ニーダー等を用
いて混練し、冷却し、粉砕する等の方法で製造すること
ができる。The epoxy resin composition for semiconductor encapsulation of the present invention may contain, if necessary, a curing accelerator, a coloring agent, a flame retardant, a release agent, a stress reducing agent, and the like. Further, the epoxy resin composition for semiconductor encapsulation of the present invention can be manufactured by a method such as mixing each raw material using a mixer or the like, kneading using a roll, a kneader or the like, cooling, and pulverizing. .
【００２０】本発明の半導体装置は、前記の本発明に係
る半導体封止用エポキシ樹脂組成物を用いて、トランス
ファー成形等の方法で半導体チップを封止して製造する
ことができ、製造方法については特に限定はない。The semiconductor device of the present invention can be manufactured by encapsulating a semiconductor chip by a method such as transfer molding using the epoxy resin composition for semiconductor encapsulation according to the present invention. Is not particularly limited.
【００２１】[0021]
【実施例】以下、本発明を実施例及び比較例に基づいて
説明する。The present invention will be described below based on examples and comparative examples.
【００２２】表１及び表２に示す配合割合（重量部）で
各原料を配合し、ミキサーで混合し、次いで８５℃の加
熱ロールで５分間混練し、冷却粉砕して半導体封止用エ
ポキシ樹脂組成物を得た。なお、各原料の詳細を下記に
示す。 ・エポキシ樹脂Ａ：オルソクレゾールノボラック型エポ
キシ樹脂（住友化学工業社製、品番ＥＳＣＮ１９５Ｘ
Ｌ） ・エポキシ樹脂Ｂ：前記式（ａ）で表わされ、Ｒ1 〜Ｒ
4 が全てメチル基であるビフェニル型エポキシ樹脂（油
化シェルエポキシ社製、品番ＹＸ４０００Ｈ） ・エポキシ樹脂Ｃ：前記式（ｂ）で表わされるジシクロ
ペンタジエン骨格を持つエポキシ樹脂（大日本インキ化
学工業社製、品番ＥＸＡ７２００） ・硬化剤：フェノールノボラック樹脂（荒川化学工業社
製、商品名タマノ−ル７５２） ・難燃剤Ｄ：臭素化エポキシ樹脂（住友化学工業社製、
品番ＥＳＢ−４００Ｔ） ・難燃剤Ｅ：三酸化アンチモン ・硬化促進剤：２−フェニルイミダゾール ・離型剤：天然カルナバ ・着色剤：カーボンブラック（三菱化学社製、品番ＭＡ
−１００Ｂ） ・カップリング剤：γグリシドキシプロピルトリメトキ
シシラン ・粗粒アルミナ粒子Ｆ：住友化学工業社製、品番ＡＬ−
３２、平均粒径３．０μｍ ・粗粒アルミナ粒子Ｇ：住友化学工業社製、品番ＡＫＰ
−２０、平均粒径０．４〜０．６μｍ ・粗粒アルミナ粒子Ｈ：住友化学工業社製、品番ＡＬ−
３３、平均粒径１２μｍ ・球状アルミナ粒子Ｉ：昭和電工社製、品番ＡＳ−５
０、平均粒径１０μｍ ・球状アルミナ粒子Ｊ：昭和電工社製、品番ＡＳ−３
０、平均粒径１６μｍ ・球状アルミナ粒子Ｋ：昭和電工社製、品番ＡＳ−５
０、平均粒径３７μｍ ・結晶シリカ粒子Ｌ：龍森社製、品番３Ｋ、平均粒径３
２μｍ ・結晶シリカ粒子Ｍ：龍森社製、品番１００Ｇ、平均粒
径１００μｍ ・球状シリカ粒子Ｎ：電気化学工業社製、品番ＦＢ−０
１、平均粒径３．０μｍ ・球状シリカ粒子Ｐ：電気化学工業社製、品番ＦＢ−３
５、平均粒径１２μｍThe raw materials were blended in the blending ratios (parts by weight) shown in Tables 1 and 2, mixed by a mixer, kneaded with a heating roll at 85 ° C. for 5 minutes, and cooled and pulverized to obtain an epoxy resin for semiconductor sealing. A composition was obtained. The details of each raw material are shown below. Epoxy resin A: ortho-cresol novolak type epoxy resin (Sumitomo Chemical Co., Ltd., product number ESCN195X)
L) Epoxy resin B: represented by the above formula (a), and R 1 to R
Biphenyl type epoxy resin in which all 4 are methyl groups (manufactured by Yuka Shell Epoxy Co., Ltd., product number YX4000H) Epoxy resin C: epoxy resin having a dicyclopentadiene skeleton represented by the above formula (b) (Dainippon Ink & Chemicals, Inc.) Curing agent: phenol novolak resin (trade name: Tamanol 752, manufactured by Arakawa Chemical Industry Co., Ltd.) Flame retardant D: brominated epoxy resin (manufactured by Sumitomo Chemical Co., Ltd.)
(Part number ESB-400T)-Flame retardant E: antimony trioxide-Curing accelerator: 2-phenylimidazole-Release agent: Natural carnauba-Colorant: carbon black (manufactured by Mitsubishi Chemical Corporation, part number MA)
-100B) ・ Coupling agent: γ-glycidoxypropyltrimethoxysilane ・ Coarse alumina particles F: manufactured by Sumitomo Chemical Co., Ltd., part number AL-
32, average particle size 3.0 μm ・ Coarse alumina particles G: manufactured by Sumitomo Chemical Co., Ltd., product number AKP
-20, average particle size 0.4 to 0.6 μm ・ Coarse alumina particles H: manufactured by Sumitomo Chemical Co., Ltd., product number AL-
33, average particle diameter 12 μm ・ Spherical alumina particles I: manufactured by Showa Denko KK, part number AS-5
0, average particle diameter 10 μm ・ Spherical alumina particles J: manufactured by Showa Denko KK, part number AS-3
0, average particle size 16 μm ・ Spherical alumina particles K: manufactured by Showa Denko KK, part number AS-5
0, average particle size 37 μm ・ Crystalline silica particles L: manufactured by Tatsumori, part number 3K, average particle size 3
2 μm ・ Crystalline silica particles M: manufactured by Tatsumori, product number 100G, average particle size 100 μm ・ Spherical silica particles N: manufactured by Denki Kagaku Kogyo, product number FB-0
1, average particle diameter 3.0 μm ・ Spherical silica particles P: manufactured by Denki Kagaku Kogyo Co., Ltd., product number FB-3
5, average particle size 12 μm
【００２３】上記で得た封止用エポキシ樹脂組成物（実
施例１〜８及び比較例１〜４）について、成形時の流動
性を示す特性であるスパイラルフロー（１７０℃におけ
る）をＥＭＩ規格に準じた方法で測定し、その結果を表
１に示した。また、円盤型のサンプル封止部と、その側
面からサンプル封止部と直行方向に上下金型間にクリア
ランスが２０μｍとなるように形成したスリット部を有
するバリ測定器のサンプル封止部に、トランスファー成
形機を用いて、封止用エポキシ樹脂組成物を加熱、注入
し、１７０℃で９０秒成形して、バリ評価用サンプルを
５個作製し、次いで、このサンプルの前記スリット部に
対応する部分に発生している、流れ出たバリの長さを測
定し、５個の測定値の平均値を算出し、バリ特性として
その結果を表１に示した。With respect to the epoxy resin compositions for sealing (Examples 1 to 8 and Comparative Examples 1 to 4) obtained above, the spiral flow (at 170 ° C.), which is a property showing the fluidity at the time of molding, is determined according to EMI standards. The measurement was carried out according to the same method, and the results are shown in Table 1. In addition, a disk-shaped sample sealing portion and a sample sealing portion of a burr measuring instrument having a slit portion formed so that a clearance between the upper and lower molds is 20 μm in a direction perpendicular to the sample sealing portion from the side surface, Using a transfer molding machine, the sealing epoxy resin composition was heated and injected, molded at 170 ° C. for 90 seconds, to produce five samples for burr evaluation, and then corresponding to the slit portions of this sample. The length of the burrs flowing out of the portion was measured, and the average value of the five measured values was calculated. The results are shown in Table 1 as burr characteristics.
【００２４】また、各封止用エポキシ樹脂組成物を用い
て、成形性（半導体装置であるＴＯＰ−３Ｆ型トランジ
スタを成形した時の成形性）、金型摩耗性、硬化物の熱
伝導率について、下記の評価方法で評価し、得られた結
果を表１に示した。The moldability (moldability when molding a TOP-3F type transistor as a semiconductor device), mold abrasion, and thermal conductivity of a cured product using each sealing epoxy resin composition. , And the results obtained are shown in Table 1.
【００２５】成形性（ＴＯＰ−３Ｆ型トランジスタを成
形した時の成形性）の評価方法：トランスファー成形法
により、ＴＯＰ−３Ｆ型トランジスタを評価用サンプル
として作製する。成形条件は１７０℃で９０秒成形した
後、１７５℃で６時間、後硬化する条件で行う。得られ
た成形品の表面を観察し、ピンホールやウェルドが発生
している場合は充填不良発生と評価する。Evaluation method of moldability (moldability when molding TOP-3F transistor): A TOP-3F transistor is prepared as an evaluation sample by a transfer molding method. The molding is performed at 170 ° C. for 90 seconds, followed by post-curing at 175 ° C. for 6 hours. The surface of the obtained molded product is observed, and if pinholes or welds are generated, it is evaluated that defective filling occurs.
【００２６】金型摩耗性の評価方法：アルミ製オリフィ
ス（ノズル直径１．５ｍｍ、長さ６．４ｍｍ）の中を４
０ｇの封止用エポキシ樹脂組成物を１０回、１５０℃で
溶融させて通し、封止用エポキシ樹脂組成物を通す前後
のアルミ製オリフィスの重量差を求め、金型摩耗量とし
て評価する。Evaluation method of mold abrasion: 4 pieces of aluminum orifice (nozzle diameter 1.5 mm, length 6.4 mm)
0 g of the epoxy resin composition for sealing is melted and passed 10 times at 150 ° C., and the weight difference between the aluminum orifices before and after passing the epoxy resin composition for sealing is determined and evaluated as a mold wear amount.
【００２７】硬化物の熱伝導率の評価方法：各封止用エ
ポキシ樹脂組成物について、金型を用いて、トランスフ
ァー成形法により、１００φ、厚さ２５±５ｍｍの円盤
状の評価用サンプルを作製する。成形条件は１７０℃で
９０秒成形した後、１７５℃で６時間、後硬化する条件
で行う。得られた評価用サンプルについて迅速熱伝導率
計を用いて熱伝導率を測定する。Evaluation method of thermal conductivity of cured product: For each epoxy resin composition for encapsulation, a disk-shaped evaluation sample having a diameter of 100 mm and a thickness of 25 ± 5 mm was prepared by a transfer molding method using a mold. I do. The molding is performed at 170 ° C. for 90 seconds, followed by post-curing at 175 ° C. for 6 hours. The thermal conductivity of the obtained evaluation sample is measured using a rapid thermal conductivity meter.
【００２８】[0028]
【表１】 [Table 1]
【００２９】[0029]
【表２】 [Table 2]
【００３０】表１及び表２の結果から、本発明の実施例
の封止用エポキシ樹脂組成物は、成形性が優れ、かつ、
金型摩耗性が小さい封止用エポキシ樹脂組成物であっ
て、高熱伝導率の硬化物が得られることが確認された。From the results shown in Tables 1 and 2, the epoxy resin compositions for sealing according to the examples of the present invention have excellent moldability,
It was confirmed that a sealing epoxy resin composition having low mold abrasion properties and a cured product having high thermal conductivity was obtained.
【００３１】[0031]
【発明の効果】本発明の半導体封止用エポキシ樹脂組成
物は、粗粒アルミナ粒子及び／又は球状アルミナ粒子を
含有し、かつ、アルミナ粒子とシリカ粒子合計量に対し
てアルミナ粒子を２〜５０重量％含有しているので、成
形性が優れ、かつ、金型摩耗性が小さい封止用エポキシ
樹脂組成物であって、高熱伝導率の硬化物が得られると
いう効果を奏する。The epoxy resin composition for encapsulating a semiconductor according to the present invention contains coarse alumina particles and / or spherical alumina particles, and contains 2 to 50 alumina particles with respect to the total amount of alumina particles and silica particles. Since it is contained by weight, it is an epoxy resin composition for sealing having excellent moldability and low mold abrasion, and has an effect of obtaining a cured product having high thermal conductivity.
【００３２】また、本発明の半導体装置は、請求項１か
ら請求項４までのいずれかに記載の半導体封止用エポキ
シ樹脂組成物を用いて、半導体チップを封止してなる半
導体装置であるので、製造時の成形不良や金型摩耗とい
う問題の発生が少なくて、かつ、熱伝導性に優れる半導
体装置となる。Further, a semiconductor device of the present invention is a semiconductor device in which a semiconductor chip is sealed using the epoxy resin composition for semiconductor sealing according to any one of claims 1 to 4. As a result, a semiconductor device which is less likely to have problems such as molding defects and mold wear during manufacturing and has excellent thermal conductivity.
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 庁内整理番号 ＦＩ 技術表示箇所 Ｃ０８Ｌ 63/00 ＮＫＶ Ｃ０８Ｌ 63/00 ＮＫＸ ＮＫＸ (72)発明者 池田 博則 大阪府門真市大字門真1048番地松下電工株 式会社内──────────────────────────────────────────────────の Continuation of the front page (51) Int.Cl. 6 Identification code Agency reference number FI Technical indication location C08L 63/00 NKV C08L 63/00 NKX NKX (72) Inventor Hironori Ikeda 1048 Okadoma Makoto, Kazuma, Osaka No. Matsushita Electric Works Co., Ltd.
Claims (5)
子及びシリカ粒子を含有する無機充填材を含有してなる
半導体封止用エポキシ樹脂組成物において、粗粒アルミ
ナ粒子及び／又は球状アルミナ粒子を含有し、かつ、ア
ルミナ粒子とシリカ粒子合計量に対してアルミナ粒子を
２〜５０重量％含有することを特徴とする半導体封止用
エポキシ樹脂組成物。1. An epoxy resin composition for semiconductor encapsulation comprising an epoxy resin, a curing agent, and an inorganic filler containing alumina particles and silica particles, wherein coarse alumina particles and / or spherical alumina particles are used. An epoxy resin composition for semiconductor encapsulation, comprising 2 to 50% by weight of alumina particles based on the total amount of alumina particles and silica particles.
ｍであり、球状アルミナ粒子の平均粒径が１０〜３０μ
ｍであることを特徴とする請求項１記載の半導体封止用
エポキシ樹脂組成物。2. The coarse alumina particles have an average particle size of 1 to 7 μm.
m, and the average particle size of the spherical alumina particles is 10 to 30 μm.
2. The epoxy resin composition for semiconductor encapsulation according to claim 1, wherein m is m.
て、平均粒径が１〜１０μｍの球状シリカ粒子を２〜５
重量％含有することを特徴とする請求項１又は請求項２
記載の半導体封止用エポキシ樹脂組成物。3. Spherical silica particles having an average particle diameter of 1 to 10 μm, based on the total amount of alumina particles and silica particles,
3. The composition according to claim 1 or 2, wherein
The epoxy resin composition for semiconductor encapsulation according to the above.
て、平均粒径が１００〜１２０μｍの結晶シリカ粒子を
５〜２０重量％含有することを特徴とする請求項１から
請求項３までのいずれかに記載の半導体封止用エポキシ
樹脂組成物。4. The method according to claim 1, wherein said silica particles have an average particle diameter of 100 to 120 μm and a crystalline silica particle content of 5 to 20% by weight based on the total amount of the alumina particles and the silica particles. The epoxy resin composition for semiconductor encapsulation according to the above item.
記載の半導体封止用エポキシ樹脂組成物を用いて、半導
体チップを封止してなる半導体装置。5. A semiconductor device in which a semiconductor chip is encapsulated with the epoxy resin composition for encapsulating a semiconductor according to any one of claims 1 to 4.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16630996A JP3186586B2 (en) | 1996-06-26 | 1996-06-26 | Epoxy resin composition for semiconductor encapsulation and semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16630996A JP3186586B2 (en) | 1996-06-26 | 1996-06-26 | Epoxy resin composition for semiconductor encapsulation and semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH1012774A true JPH1012774A (en) | 1998-01-16 |
| JP3186586B2 JP3186586B2 (en) | 2001-07-11 |
Family
ID=15828961
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16630996A Expired - Fee Related JP3186586B2 (en) | 1996-06-26 | 1996-06-26 | Epoxy resin composition for semiconductor encapsulation and semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3186586B2 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001348488A (en) * | 2000-06-06 | 2001-12-18 | Matsushita Electric Works Ltd | Heat-conductive resin composition, prepreg, radiating circuit board and radiating heating part |
| US7622515B2 (en) | 2003-03-28 | 2009-11-24 | Sumitomo Bakelite Company Limited | Composition of epoxy resin, phenolic resin, silicone compound, spherical alumina and ultrafine silica |
| JP2016003289A (en) * | 2014-06-17 | 2016-01-12 | 日本バルカー工業株式会社 | Paste for sealing material |
| JP2020111748A (en) * | 2019-01-15 | 2020-07-27 | 京セラ株式会社 | Resin composition for semiconductor sealing and semiconductor device using the same |
-
1996
- 1996-06-26 JP JP16630996A patent/JP3186586B2/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001348488A (en) * | 2000-06-06 | 2001-12-18 | Matsushita Electric Works Ltd | Heat-conductive resin composition, prepreg, radiating circuit board and radiating heating part |
| US7622515B2 (en) | 2003-03-28 | 2009-11-24 | Sumitomo Bakelite Company Limited | Composition of epoxy resin, phenolic resin, silicone compound, spherical alumina and ultrafine silica |
| US8178599B2 (en) | 2003-03-28 | 2012-05-15 | Sumitomo Bakelite Company, Ltd. | Composition of epoxy resin, spherical alumina, ultrafine silica polyorganosiloxane and phenolic resin |
| JP2016003289A (en) * | 2014-06-17 | 2016-01-12 | 日本バルカー工業株式会社 | Paste for sealing material |
| JP2020111748A (en) * | 2019-01-15 | 2020-07-27 | 京セラ株式会社 | Resin composition for semiconductor sealing and semiconductor device using the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3186586B2 (en) | 2001-07-11 |
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