JPH0980470A - Method for repairing wiring defect of tft substrate - Google Patents

Abstract

PROBLEM TO BE SOLVED: To effectively and easily repair broken wire of matrix wiring and a short circuit defect on an intersected point on a TFT substrate. SOLUTION: Plural lines of repair lines R1 -Rs are wired insulation-intersecting with respective leader lines of respective gate lines G1 -Gm and drain lines D1 -Dn at two positions in a square shape on surroundings of the matrix wiring, and a repair lines group constituted so as to cut one corners of respective repair lines R1 -Rs is provided. Then, when optional gate line G or drain line D breaks B at an optional position, two positions of insulation intersections between any repair line R and the leader line of the gate line G or the drain line D are connected respectively, and a detour for the broken wire B is constituted to be restored. For the short circuit S on the intersected point, the short- circuited intersected point is cut to be removed, and a similar detour is constituted by two lines of repair lines.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for repairing wiring defects on a TFT substrate for a color liquid crystal panel.

[0002]

2. Description of the Related Art A TFT substrate is used for a color liquid crystal panel for displaying an image such as a television. Figure 2 shows TF
The structure of the T substrate 1 and the control unit 2 corresponding thereto are shown. TFT
The substrate 1 has a square glass substrate 11 in which a plurality of m electrodes and n electrodes of a plurality of m and n electrodes, respectively, in other words, are usually gate lines 12 (G _{1 to} G _m ) and Y electrodes as X electrodes. As a general rule, the drain lines 13 (D _{1 to} D _n ) are wired in a matrix (hereinafter referred to as matrix wiring), and electrode elements 14 made of TFTs or the like are formed at the respective intersections.
The control unit 2 is composed of a data circuit 21 and a scanning circuit 22, and image data is given from the data circuit 22 to each drain line D, while the scanning circuit 21 sequentially passes each gate line G at an appropriate timing. And scan the TFT of each electrode element 14
It is a mechanism in which the color filter transmits or blocks the illumination light from the back by turning it N or OFF.

Various defects occur in the TFT substrate 1 during the manufacturing process. Among them, there are disconnection and short circuit of the matrix wiring, and the short circuit is between the gate lines G or between the drain lines, short circuit of these intersections,
Or there is grounding. FIG. 3 exemplifies these defects. For example, the drain line D ₁ is broken at one position marked with “X”, and all the electrode elements 14 connected to the drain line D ₁ below the break B are connected. Is not supplied with data. In addition, the gate line G ₂ is grounded E at one position shown in the figure, and all the electrode elements 14 connected to the gate line G ₂ are not scanned, and the operation of any of them becomes defective. Further, the drain line D ₂ and the gate line G ₁ are short-circuited S at the intersection, and all the electrode elements 14 connected to both lines also become defective. When the electrode element 14 thus malfunctions, a good image cannot be reproduced on the liquid crystal panel.

[0004]

As described above, the matrix wiring of the TFT substrate 1 has a large number of electrode elements 14 malfunctioning even if there is a disconnection, grounding, or short-circuiting at one intersection. Defects are detected by post-manufacturing inspections and corrective action is taken where possible. However, there is a laser cutter type correction device for short-circuits other than the crossing point and grounding E. This makes it possible to cut the short-circuited part, and the correction is relatively easy. At present, since there is no effective correction device, it is generally disposed of, and the current situation is that this leads to a decrease in product yield. The present invention has been made in view of the above, and an object thereof is to provide an effective repairing method for a short circuit defect at an intersection and a disconnection of a matrix wiring.

[0005]

The present invention is a method for repairing wiring defects in a TFT substrate, in which a plurality of repair lines are provided on a glass substrate around a matrix wiring and each gate line (X).
(2) Electrode) and drain wire (Y electrode) lead wires are insulated and intersected at two locations to form a square wire, and a repair wire group is formed by cutting one even of each square repair wire. . When any gate line or drain line is broken at any place, connect two insulation intersections of any repair line of the repair line group and the lead line of the gate line or drain line, respectively. , Configure and repair a detour for the disconnection point. In the above, when the gate line and the drain line are short-circuited at any intersection of the matrix wiring, the gate line and the drain line are respectively cut in the vicinity of the short-circuit intersection, the short-circuit intersection is excluded, and the short-circuit point is excluded. By connecting the two insulated intersections of each of the extracted lead lines of the gate line and the drain line and any two repair lines of the repair line group, a detour path to the short-circuit intersection is formed and repaired.

[0006]

BEST MODE FOR CARRYING OUT THE INVENTION In the above wiring repair method for a TFT substrate, in a repair line group provided in a rectangular shape on a glass substrate around a matrix wiring, a plurality of repair lines are provided for each gate line and drain line. 2 of each of the leader lines
It is constructed by wiring with insulation crossing at a location and cutting one even number of each repair line. Now, when a certain gate line is broken at an arbitrary point, if any repair line and the lead line of the broken gate line are connected at two insulation intersections, respectively, it will be in front of the broken point. Each electrode element (on the side of the scanning circuit) operates by directly receiving the scanning signal from the scanning circuit, while each electrode element after the disconnection point forms a detour by the connected insulation intersections. , Operates by a scanning signal bypassing this. That is, the disconnection point is repaired. The same applies to the case where the drain wire is disconnected. Next, when the gate line and the drain line are short-circuited at a certain intersection of the matrix wiring, the gate line and the drain line are respectively cut in the vicinity of the short-circuited intersection to exclude the short-circuited intersection, and the excluded gate line and The lead line of the drain line is connected to any two insulation intersections with any two repair lines, and a detour for the short-circuiting intersection is formed and repaired in the same manner as described above. As described above, the repairing method of the present invention is a method of constructing a bypass line by a repair line with respect to a disconnection or a short-circuit intersection of a matrix wiring, and therefore has an advantage that repairing is easy and effective.

[0007]

1 shows an embodiment of a TFT substrate 1 to which the present invention is applied. Each intersection of the matrix wirings of the TFT substrate 1 exists within the range of a chain line. Each drain wire (D
The lead lines of _{1 to} D _n ) and the gate lines (G _{1 to} G _m ) are drawn to the margins of the glass substrate 11 outside the range of the alternate long and short dash line. A matrix wiring is surrounded by this blank space, and a plurality of s repair lines (R _{1 to} R _s ) are laid in a rectangular shape to insulate the intersection with each lead line, for example, removing the upper left end of the repair line. The line group 15 is formed. Each repair wire (R ₁ ~ R
_s ) is preferably the same wire material and the same diameter as the matrix wiring, and can be easily formed at the time of forming the matrix wiring. Now, for example, when the gate line G ₂ has a disconnection B ₁ at a portion marked by X, each electrode element 14 before the disconnection B ₁ directly receives a scanning signal from the scanning circuit 22 (see FIG. 2). receive. On the other hand, for example, repair line R ₁
, And two insulated intersections p _a , of this and the gate line G ₂ .
When p _b is respectively connected, a bypass line of the repair line R ₁ via the insulating intersections p _a and p _b is formed for each electrode element 14 after the disconnection B ₁ , and the scanning signal bypasses this. ,
The disconnection B ₁ is repaired by being supplied to these electrode elements 14. The same applies when the drain line D ₃ is disconnected B ₂ at a point × mark shown, for example, take the repair line R _2, 2 points insulating intersection p _c, by connecting the p _d, detours Once constructed, the disconnection B ₂ is repaired. Next, when the arbitrary drain line D _r and the gate line G _q are short-circuited S at the intersection, both lines are cut in the vicinity of the short-circuiting intersection to exclude the short-circuiting intersection, and the drain line D _r and By taking two appropriate repair lines R _p and R _q with respect to the gate line G _q and connecting the respective insulation intersections p _e and p _f and p _g and p _h ,
A detour is constructed for both lines and the short circuit S at the intersection is repaired. The number s of repair lines R may be determined as an appropriate value in consideration of the frequency of occurrence of the disconnection B and the short circuit S at the intersection.

[0008]

As described above, according to the wiring repairing method of the present invention, the repair line constitutes the detour path for the disconnection of the matrix wiring or the short-circuiting of the intersections. The repair is effective and easy, and there is a great effect to contribute to the improvement of the yield of the TFT substrate product.

[Brief description of drawings]

FIG. 1 is a configuration diagram of an embodiment of a TFT substrate 1 to which the present invention is applied.

FIG. 2 is an explanatory diagram of a configuration of a TFT substrate 1 and a control unit 2.

FIG. 3 is an explanatory diagram of disconnection and short circuit occurring in matrix wiring.

[Explanation of symbols]

1 ... TFT substrate, 11 ... Glass substrate, 12 ... Gate line G, 13
... Drain line D, 14 ... Electrode element, 15 ... Repair line group, 2 ...
Control unit, 21 ... Data circuit, 22 ... Scanning circuit, B ... Disconnection, E
Insulating intersection ... ground, short-circuiting of S ... intersections, R ₁ to R _s ... s book repair line is p _a ~p _h ... connection.

Claims (2)

[Claims] 1. A TFT substrate having a rectangular glass substrate on the surface of which a plurality of X electrodes and Y electrodes are matrix-wired, and having an electrode element made of a TFT at each intersection of the matrix wires. On the glass substrate, a plurality of repair wires are insulated and intersected at two points with each of the lead wires of each of the X electrodes and the Y electrodes, and the repair wires are wired in a square shape. When a repair line group configured by cutting even numbers is provided and any X electrode or Y electrode is disconnected at any place, any repair line of the repair line group and the X electrode or Y A method for repairing a wiring defect of a TFT substrate, characterized in that the above-mentioned two insulating intersections with a lead wire of an electrode are connected to each other to form a detour path to the disconnected portion and repair the wiring defect. 2. The X electrode is a gate line, the Y electrode is a drain line, and when the gate line and the drain line are short-circuited at any intersection of the matrix wiring, the short-circuit intersection , The gate line and the drain line are respectively cut to exclude the short-circuit intersection, the lead line of the gate line and the drain line from which the short-circuit point is excluded, and any two repair lines of the repair line group. 2. The method for repairing a wiring defect of a TFT substrate according to claim 1, wherein each of the two insulated intersections with a line is connected to form a detour for the short-circuited intersection and repaired.