JPH05333377A - Manufacture of liquid crystal display device - Google Patents

Abstract

PURPOSE:To prevent a TFT pattern from being damaged at the middle of a process by short-circuiting a signal terminal part for inputting to the transistor of a display part with a COM pattern and separating the signal terminal part in the middle of the manufacture process. CONSTITUTION:Concerning the manufacture of the TFT pattern, the signal input part for inputting to a transistor 8 of the display part is short-circuited with a COM pattern independently of peripherally arranged shunt bus lines 2 and 3 just before entering the display part transistor 8. At the middle of the manufacture process, the short-circuited part is separated. Namely, a gate line 10 and an SC line 9 of the TFT pattern are short-circuited by a short-circuit pattern 11. Thus, wiring turned around from an input line 10 toward the display part transistor 8 to a GND 10 is shortened, and wiring resistance can be decreased. Further, process damage can be prevented by forming the short-circuited part 11 of the pattern in the first half of the manufacture process and separating it in the latter half.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a liquid crystal display device, and more particularly to a method for manufacturing a TFT type liquid crystal display panel.

[0002]

2. Description of the Related Art A TFT used in manufacturing a conventional liquid crystal display device.
As shown in FIG. 4, the pattern is such that the display section Tr (transistor) 8 is connected to the G (gate) line 1 which is the signal input terminal section.
Through 0 and D (drain) lines 21, G (gate) shunt bus lines 3 and D1 (drain) shunt bus lines 2 and D which are surrounding shunt bus lines.
2 (drain) shunt bus lines 4 are collectively connected, and the shunt bus lines 2, 3 and 4 and the COM shunt bus lines 1 and 5 are connected to the COM pattern (GND) 6 to input a signal. The terminal part is G
It was dropped to ND. By this method, measures against static electricity were taken during the manufacturing process.

[0003]

In the conventional TFT pattern of the liquid crystal display device, the signal input terminals to the Tr (transistor) of the display section are collectively connected to the shunt bus line and dropped to GND through the shunt bus line. Has taken measures against static electricity during the manufacturing process. Due to such a structure, the routing wiring from the input line to the display unit Tr (transistor) to the GND becomes long, and the wiring resistance increases due to the routing, so that the static electricity accumulated in the display unit does not easily escape. , As a result, internal T
There is a problem that it leads to deterioration of r (transistor).

[0004]

The TFT pattern of the liquid crystal display device of the present invention has a structure in which the root of each signal input terminal line to the Tr (transistor) of the display section is short-circuited to the COM pattern. .. Therefore, the lead wiring from the input line to the display unit Tr (transistor) to the GND can be shortened, and the wiring resistance can be reduced. The short-circuited portion of the pattern is formed in the first half of the manufacturing process and separated in the latter half of the manufacturing process to prevent process damage in the middle of the process.

[0005]

The present invention will be described below with reference to the drawings. FIG. 1 is an equivalent circuit diagram of a TFT pattern according to the first embodiment of the present invention. In this embodiment, the TFT pattern G
The (gate) line 10 and the SC line 9 are short-circuited by the number of lines by the short pattern 11.

FIGS. 2A to 2F show G of the first embodiment.
FIG. 6 is a cross-sectional view of a process in which a portion where the (gate) line 10 is shorted to the SC line 9 is formed and separated. As shown in FIG. 2A, in the process of forming and separating the short pattern 11 (FIG. 1), the short pattern (Cr film) 16 and the short pattern (IT
An O film) 17 is formed in advance, and through holes 22 are formed in advance in the insulating films 14 and 15 formed thereon. Next, as shown in FIG. 2B, a Cr film 18 (for forming a drain pattern) is formed, and a drain pattern is formed by photolithography as shown in FIG. And the short pattern (Cr film) 16 are etched at once. Next, as shown in FIG.
The TO film 19 (for forming the transparent electrode of the pixel) is formed, and the transparent electrode pattern of the pixel is formed by the photolithography technique as shown in FIG. 2 (e). At the same time, the ITO film 19 and the short pattern (ITO film) are formed. Etch 17 at once. Then, as shown in FIG. 2F, the insulating film 20 is formed.

By the processes shown in FIGS. 2A to 2F, the short patterns 16 and 17 are formed and the insulating film 1 is formed.
During formation of 4 and 15, process damage of the TFT pattern due to static electricity or the like is prevented.

FIG. 3 is an equivalent circuit diagram of the TFT pattern of the second embodiment of the present invention. In this embodiment, the D (drain) lines 21 of the TFT pattern and the COM patterns 12 are short patterns 11 corresponding to the number of D (drain) lines.
It is when it is short-circuited in. The short pattern 11 is formed at the time of forming the drain pattern and the transparent electrode of the pixel, and is separated by the laser cutter at the final stage of the panel assembly process. By the above method, the process damage of the TFT pattern due to static electricity or the like can be prevented from the formation of the drain pattern to the separation of the short pattern by the laser cutter at the final stage of the panel assembly process.

[0009]

As described above, according to the present invention, in the TFT pattern of the liquid crystal display device, the signal terminal portion input to the Tr (transistor) of the display portion is displayed independently of the shunt bus line arranged in the periphery. C just before entering section Tr
Since the short-circuited portion is separated from the OM pattern and the short-circuited portion is separated during the manufacturing process, the display portion T
The routing wiring from the input line to the r (transistor) to the GND can be shortened and the wiring resistance can be reduced. Therefore, when static electricity is accumulated in the display unit, the static electricity can be easily released and the intermediate process This has an effect of preventing process damage of the TFT pattern in the above.

[Brief description of drawings]

FIG. 1 is an equivalent circuit diagram of a TFT pattern according to a first embodiment of the present invention.

2A to 2F are the short circuit of the first embodiment.
It is sectional drawing which shows the formation process of a pattern.

FIG. 3 is an equivalent circuit diagram of a TFT pattern according to a second embodiment of the present invention.

FIG. 4 is an equivalent circuit diagram of a conventional TFT pattern.

[Explanation of symbols]

 1,5 COM Shunt Bus Line 2 D1 Shunt Bus Line 3 G Shunt Bus Line 4 D2 Shunt Bus Line 6 COM Pattern (GND) 7 Transfer Pad 8 Display Tr (Transistor) 9 SC Line 10 G (Gate) Line 11 Short Pattern 12 COM pattern 13 Glass substrate 14, 15, 20 Insulation film 16 Short pattern (Cr film) 17 Short pattern (ITO film) 18 Cr film 19 ITO film 21 D (drain) line 22 Through hole 23 Protection transistor

Claims (1)

[Claims] 1. A method of manufacturing a TFT pattern of a liquid crystal display device, wherein a signal terminal portion input to a transistor of a display portion is provided independently of a shunt bus line arranged around the signal terminal portion.
A method for manufacturing a liquid crystal display device, comprising short-circuiting with a COM pattern immediately before entering a display transistor, and separating the short-circuited part in an intermediate step of the manufacturing process.