KR100527082B1 - Method for fabricating tft-lcd - Google Patents

Abstract

The present invention discloses a method of manufacturing a thin film transistor liquid crystal display device which can reduce damage caused by static electricity and can easily perform defect detection on a unit pixel. According to an aspect of the present invention, there is provided a method of manufacturing a thin film transistor liquid crystal display device, including forming gate lines on a transparent insulating substrate and forming a shorting bar connecting the gate lines to an outer side of a cell region; Forming a gate insulating film on an entire surface of the transparent insulating substrate on which the gate line and the shorting bar are formed; Selectively etching the gate insulating layer to form a hole exposing a portion of the shorting bar between the gate lines; Forming a channel layer on the gate electrode which is a part of the gate line; Depositing a predetermined metal film on top of the resultant product; Etching the metal film to form a thin film transistor to form a data line including a source / drain electrode and etching the metal film deposited in the hole to expose the shorting bar; Depositing a protective film on the resultant; And etching the passivation layer to cover only the thin film transistor and to etch the portion of the passivation layer deposited in the hole and the portion of the shorting bar thereunder so as to break the shorting bar connecting the gate lines. do.

Description

Manufacturing method of thin film transistor liquid crystal display device {METHOD FOR FABRICATING TFT-LCD}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a thin film transistor liquid crystal display device, and more particularly, to a method for manufacturing a thin film transistor liquid crystal display device capable of reducing defects caused by static electricity and easily detecting defects of a unit pixel. It is about.

Since liquid crystal displays have characteristics such as light weight, thinness, and low power consumption, they are used in terminals or video devices of various information apparatuses in place of the CRT (Cathod-ray tube). In particular, the thin film transistor liquid crystal display (hereinafter referred to as TFT-LCD) has excellent response characteristics and is suitable for high pixel number, so that a high quality and large display device comparable to the CRT can be realized. Can be.

The TFT-LCD has a TFT array substrate including TFTs and pixel electrodes for each pixel arranged in a matrix form, and a color filter substrate on which color filters and counter electrodes are formed to face each other at predetermined intervals, and the liquid crystal in the space therebetween. It consists of a sealed structure.

On the other hand, in the manufacturing of the above-described TFT-LCD, in particular in the manufacture of the TFT array substrate, defects are caused by the static electricity generated in the manufacturing process. This is because the glass substrate on which the patterns such as the gate line, the data line and the TFT are formed is an insulator, so that the static electricity generated during the manufacturing process flows into the pattern and is present locally, and the amount of static electricity introduced is small. Even if the voltage is high by being present locally at the inflowed portion, it eventually causes damage to devices such as TFTs, or causes wiring of data lines.

Therefore, in the related art, a shorting bar for connecting all the gate lines and the data lines to the inside and the outside of the gate pad and the data pad, respectively, or an antistatic circuit at each gate line and the data line, respectively. Or by neutralizing the static electricity generated from the substrate using an ionizer, thereby preventing defects caused by static electricity.

On the other hand, since the method of using an ionizer requires equipment investment cost and cannot obtain a large effect, conventionally, the method of providing a shorting bar or providing an antistatic circuit is mainly used.

1 is a plan view of a main portion of a TFT array substrate having a shorting bar according to the related art, and as shown, each gate line 1 and data line 3 has one shorting bar: 10), and the short ring bar 10 prevents a defect due to static electricity. Here, the shorting bar 10 is usually formed together at the time of forming the gate line. Unexplained reference numeral 2 denotes a gate pad and 4 denotes a data pad, respectively.

FIG. 2 is a plan view of a main part of a TFT array substrate having an antistatic circuit according to another conventional art. As shown, each gate line 1 and data line 3 includes an antistatic circuit 20. The antistatic circuit 10 is prevented by the static electricity prevention circuit 10.

The antistatic circuit 20 combines two transistors to form a diode, and when a predetermined voltage or more occurs through the circuit, the antistatic circuit 20 creates an equipotential between the gate line 1 and the data line 3 to prevent static electricity. This prevents damage caused by a short circuit between the lines.

However, in order to prevent damage caused by static electricity, the method of providing a shorting bar is very effective in preventing damage caused by static electricity. However, upon detection of pixel defects performed after fabrication of the TFT array substrate, each unit pixel is removed. Since it cannot be tested individually, its use is limited, whereas the method of providing an anti-static circuit can easily detect each pixel defect, but is damaged by static electricity compared to the method using a shorting bar. There is a problem that the suppression ability of the fall.

Accordingly, the present invention devised to solve the above problems provides a manufacturing method of a TFT-LCD that can reduce damage caused by static electricity and at the same time easily detect defects of unit pixels. have.

According to an aspect of the present invention, there is provided a method of manufacturing a TFT-LCD, including forming gate lines on a transparent insulating substrate and forming a shorting bar connecting the gate lines to an outer side of a cell region; Forming a gate insulating film on an entire surface of the transparent insulating substrate on which the gate line and the shorting bar are formed; Selectively etching the gate insulating layer to form a hole exposing a portion of the shorting bar between the gate lines; Forming a channel layer on the gate electrode which is a part of the gate line; Depositing a predetermined metal film on top of the resultant product; Etching the metal film to form a thin film transistor to form a data line including a source / drain electrode and etching the metal film deposited in the hole to expose the shorting bar; Depositing a protective film on the resultant; And etching the passivation layer to cover only the thin film transistor and to etch the portion of the passivation layer deposited in the hole and the portion of the shorting bar thereunder so as to break the shorting bar connecting the gate lines. do.

According to the present invention, by providing a short ring bar, damage caused by static electricity can be effectively reduced, and defect detection of a unit pixel can be easily performed by cutting off the short ring bar during etching of the protective film.

(Example)

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

The present invention fabricates a TFT array substrate with the structure shown in FIG. 1 in order to effectively reduce the damage caused by static electricity and to easily perform defect detection of subsequent unit pixels, and then, as a final step of the manufacturing process, Break the short ring bar when patterning the protective film.

That is, the present invention forms a shorting bar connecting the gate lines together in forming the gate line, thereby minimizing the damage caused by static electricity generated during the manufacturing process, and then in the patterning of the protective film, which is the final step of the manufacturing process. By cutting off the portion of the shorting bar connecting the gate lines adjacent to each other, defect detection of each unit pixel can be easily performed upon detection of subsequent pixel defects.

3A to 3E are cross-sectional views of respective processes for explaining a method of manufacturing a TFT-LCD according to an embodiment of the present invention. Here, the drawings show an outer portion of the cell region in which the shorting bar is formed.

First, as shown in FIG. 3A, a gate metal film is deposited on a transparent insulating substrate such as a glass substrate 1, and the gate metal film is patterned by a known photolithography process to form a gate line 22. At the same time, a short ring bar 23 is formed on the outer side of the cell region to connect the gate lines 22.

Next, as shown in FIG. 3B, a gate insulating film 24 is deposited on the front surface of the glass substrate 21 for electrical insulation between the gate line 22 and the data line to be subsequently formed. As shown in FIG. 3C, a portion of the gate insulating layer covering the shorting bar 23 is etched to expose a portion of the shorting bar 23. Reference numeral 25 denotes a hole exposing the short ring bar 23.

Next, although not shown, a channel layer is formed on the gate electrode which is a part of the gate line 22, and a metal film for data line is deposited on the resultant, and then the TFT is formed in the cell region. The line metal film is patterned to form a data line including a source / drain electrode. At this time, as illustrated in FIG. 3D, the metal film for data line deposited in the hole 25 is also etched and removed.

Next, a protective film 27 is deposited to protect the TFT formed in the cell region on the entire surface of the resultant, and then the protective film is patterned so as to cover only the TFT. In this case, as shown in FIG. 3E, the protective film portion deposited in the hole 25 is also etched and removed, and the short ring bar portion exposed by removing the protective film deposited in the hole 25 is also included. Etched and removed, the gate lines 22 are separated from each other without being connected to each other by the short ring bar 23.

Therefore, if the TFT array substrate is manufactured in the above order, the damage caused by the static electricity is effectively reduced by the short ring bar during the process, and the gate is cut off after the process is completed. Since the lines are separated, defect detection for each unit pixel can be easily performed.

On the other hand, although not shown, as another embodiment of the present invention, in addition to the above-described embodiment, an anti-static circuit may be provided at the end of the gate line disposed outside the cell region, that is, outside the gate pad. In this case, damage caused by static electricity can be further reduced.

As described above, the present invention can effectively reduce the damage caused by static electricity generated during the manufacturing process by providing the short ring bar, thereby improving the production yield of the TFT-LCD. In addition, since the shorting bar is cut off at the end of the manufacturing process, defect detection for each unit pixel may be easily performed when detecting a pixel defect.

In addition, this invention can be implemented in various changes within the range which does not deviate from the summary.

1 is a plan view showing main parts of a thin film transistor array substrate having a shorting bar according to the related art.

2 is a plan view illustrating main parts of a thin film transistor array substrate having an antistatic circuit according to another related art.

3A to 3E are cross-sectional views of respective processes for explaining a method of manufacturing a thin film transistor liquid crystal display device according to an exemplary embodiment of the present invention.

(Explanation of symbols for the main parts of the drawing)

21: glass substrate 22: gate line

23: short ring bar 24: gate insulating film

25 hole 26 metal film for data line

27: shield

Claims (2)

A method of manufacturing a thin film transistor liquid crystal display device for reducing damage caused by static electricity and for easily performing defect detection on a unit pixel, Forming a gate line on the transparent insulating substrate and simultaneously forming a shorting bar connecting the gate lines to an outer side of a cell region; Forming a gate insulating film on an entire surface of the transparent insulating substrate on which the gate line and the shorting bar are formed; Selectively etching the gate insulating layer to form a hole exposing a portion of the shorting bar between the gate lines; Forming a channel layer on the gate electrode which is a part of the gate line; Depositing a predetermined metal film on top of the resultant product; Etching the metal film to form a thin film transistor to form a data line including a source / drain electrode and etching the metal film deposited in the hole to expose the shorting bar; Depositing a protective film on the resultant; And Etching the passivation layer to cover only the thin film transistor, and simultaneously etching the passivation layer portion and the shorting bar portion below the hole so as to break the short ring bar connecting the gate lines. A method of manufacturing a thin film transistor liquid crystal display device, characterized in that. The method of claim 1, wherein an antistatic circuit connected to the gate line is formed outside the cell region when the thin film transistor is formed.