KR100318537B1 - thin film transistor substrates for liquid crystal displays and repairing methods thereof - Google Patents

Abstract

The gate line formed in the horizontal direction, the common electrode line formed in parallel with each other, and the plurality of common electrodes connecting the double common electrode line in the vertical direction are formed on the substrate, and the data auxiliary line is formed insulated from the gate line in the vertical direction. A repair pattern overlapping the gate line and one of the adjacent common electrode lines is formed of the same material as the data auxiliary line. In this structure, when the gate line is disconnected, each repair pattern located at both the left and right sides of the disconnection point is laser-shorted with the gate line and the common electrode line, and then the left and right portions of the repair pattern located at the left side of the disconnection point are located. In the right part of the repair pattern, the common electrode line is separated using a laser, and the common electrode electrically connected to the common electrode line between the two separated parts is separated from the common electrode line, thereby separating the common electrode line and the repair pattern with the gate voltage isolated. The path is to be passed across the gate line disconnection point.

Description

Thin film transistor substrates for liquid crystal displays and repairing methods

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin film transistor substrate for a liquid crystal display device and a repair method thereof, and more particularly, to a thin film for a transverse electric field drive type liquid crystal display device for repairing short circuit defects in gate lines or data lines and short circuit defects at intersections of gate lines and data lines. A wiring structure of a transistor substrate and a repair method using the wiring structure are provided.

In the transverse electric field driving type liquid crystal display, a common electrode and a pixel electrode are formed on one of two substrates facing each other, and a liquid crystal is injected between the two substrates. An electric field formed between the common electrode and the pixel electrode is a substrate. Since they are parallel to the plane, the long axis of the liquid crystal molecules operates parallel to the plane of the substrate. Thus, the viewing angle is enlarged.

Next, the electrode and the wiring structure of the transverse electric field drive type liquid crystal display device according to the related art will be further described.

On one substrate of the transverse electric field driving type liquid crystal display device, a plurality of common electrodes are formed on the substrate in a horizontal direction, a double common electrode line parallel to the gate line, and a plurality of common electrodes connecting the common electrode line in the vertical direction, and an insulating film is covered thereon. have. Data lines and semiconductor layers such as data lines, source and drain electrodes, pixel electrode lines, and pixel electrodes are formed on the insulating film. The semiconductor layer is formed on a part of the gate line, and the data line is formed in the vertical direction to cross the gate line. The drain electrode, which is separated from the source electrode and the source electrode extending from the data line, overlaps the semiconductor layer on the gate electrode. The pixel electrode line extending from the drain electrode overlaps the common electrode line, and a plurality of pixel electrodes extending from the pixel electrode line are formed to alternately lie in parallel with the common electrode.

In such a transverse electric field driving liquid crystal display, since the gate lines are formed in a single wiring structure, it is difficult to repair the disconnection of the gate lines or the wiring short circuit at the intersection of the gate lines and the data lines.

An object of the present invention is to make it easy to repair a disconnection of a gate line or a wiring short circuit at an intersection portion of a gate line and a data line.

1 is a wiring diagram of a thin film transistor substrate for a liquid crystal display according to a first embodiment of the present invention.

FIG. 2 is a cross-sectional view taken along line II-II 'of FIG. 1;

3 is a plan view illustrating a method of repairing a gate line disconnection defect using a wiring structure according to a first embodiment of the present invention;

4 is a plan view illustrating a method of repairing short circuit defects in a gate line and a data line using a wiring structure according to a first embodiment of the present invention;

FIG. 5 is a plan view illustrating a first method of repairing data line disconnection defects using a wiring structure of a thin film transistor substrate for a liquid crystal display according to a second exemplary embodiment of the present invention;

6 is a plan view showing a second method of repairing data line disconnection defect using a wiring structure according to the second embodiment of the present invention;

FIG. 7 is a plan view illustrating a method for repairing a gate line disconnection defect using a wiring structure of a thin film transistor substrate for a liquid crystal display according to a third exemplary embodiment of the present invention.

8 is a plan view illustrating a method of repairing a short circuit defect at an intersection portion of a gate line and a data line using a wiring structure according to a third exemplary embodiment of the present invention.

In order to solve this problem, in the present invention, by providing a repair pattern overlapping the gate line and the common electrode line at the same time, by repairing the disconnection defect of the gate line or data line and the short circuit defect at the intersection of the gate line and the data line by using this repair pattern, Complement the single gate line structure of the transverse electric field type liquid crystal display device.

DETAILED DESCRIPTION Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art may easily implement the present invention.

First, a wiring structure of a thin film transistor substrate for a transverse electric field driving type liquid crystal display device according to a first embodiment of the present invention will be described.

1 is a wiring diagram of a thin film transistor substrate for a liquid crystal display according to a first exemplary embodiment of the present invention, and FIG. 2 is a cross-sectional view taken along line II-II 'of FIG. 1.

As shown in FIGS. 1 and 2, a plurality of gate lines 110 are formed in the horizontal direction on the insulating substrate 10, and the two gate lines 110 are disposed parallel to the gate lines 110 between two adjacent gate lines 110. Common electrode lines 120 and 140 are formed, and a plurality of common electrodes 140 connecting the common electrode lines 120 and 140 in the vertical direction are formed.

The gate line 110, the double common electrode lines 120 and 140, and the common electrode 140 are covered with the gate insulating layer 20.

A plurality of data auxiliary lines 200 are formed in the vertical direction on the gate insulating layer 20. A region surrounded by two adjacent data auxiliary lines 200 and two adjacent gate lines 110 forms a unit pixel. Each unit pixel includes at least two of the aforementioned common electrodes 140, and the common electrode 140 positioned at the outermost portion is adjacent to the data line auxiliary line 200. In addition, a plurality of repair patterns 210 are formed on the gate insulating layer 20 to overlap the gate line 110 and one or both of the common electrode lines 120 and 130 adjacent to the gate line 110. One repair pattern 210 is formed per pixel and is formed of the same material as the data auxiliary line 200.

The data auxiliary line 200 and the repair pattern 210 are covered with the interlayer insulating layer 30.

The semiconductor layer 400, the data line and the source electrode 500, the drain electrode 510, the pixel electrode line 520, and the pixel electrode 530 are formed on the interlayer insulating layer 30. The semiconductor layer 400 is formed on a portion of the interlayer insulating layer 30 on the gate line 110, and the data line 500 has the data line 500 vertically along the data auxiliary line 200. The auxiliary data line 200 is in contact with the auxiliary data line 200 through a contact hole C formed in the gate insulating layer 20. The source electrode 500 extends from the data line 500 to overlap a portion of the semiconductor layer 400, the drain electrode 510 is separated from the source electrode 500, and faces the source electrode 500. It overlaps with the semiconductor layer 400. A doped semiconductor layer 410 is formed on a surface where the source and drain electrodes 500 and 510 and the semiconductor layer 400 are in contact with each other to improve contact characteristics. The pixel electrode line 520 extends in the horizontal direction from the drain electrode 510 and overlaps the common electrode line 120, so that a storage capacitor is formed between the two electrode lines 520 and 120, and the pixel electrode 530 is the pixel electrode line. It extends longitudinally from 520 and is alternately arranged with the common electrode 140.

As described above, in the thin film transistor substrate for the liquid crystal display according to the first embodiment, the repair pattern 210 overlaps the gate line 110 and the common electrode line 130 at the same time through the gate insulating film 20. The repair pattern 210 may be formed on the same layer as the data line 500.

The repair pattern 210 repairs disconnection and short circuit failure when the gate line 110 is disconnected or the two wires 110 and 500 are shorted at a portion where the gate line 110 and the data line 500 cross each other. To be used.

3 and 4 show a method for repairing disconnection and short circuit failure, respectively.

First, a method of repairing a disconnection defect of a gate line will be described with reference to FIG. 3.

3 is a plan view illustrating a method of repairing a gate line disconnection defect using a wiring structure according to a first embodiment of the present invention.

As shown in FIG. 3, when the gate line 110 is disconnected, the repair patterns 210 positioned at both left and right sides of the disconnection point 1 may be connected to the gate line 110 and the common electrode line 130. And a laser short circuit, and using the common electrode line 130 in the left portion 101 of the repair pattern 210 located on the left side of the disconnection point 1 and the right portion 501 of the repair pattern 210 located on the right side using a laser. After the separation, the common electrode 140 electrically connected to the common electrode line 130 between the two separated portions 101 and 501 is lasered at the portions 210, 301 and 401 adjacent to the common electrode line 130. Separate.

As such, a part of the common electrode line 130 is isolated, and the isolation part is shorted to the gate line 110 by using the repair pattern 210 at both disconnection points of the gate line 110, so that the gate voltage is shorted. 21, 31, and 41 to the gate line 110 across the disconnection point. In this case, since the common electrode line 130 of one of the common electrode lines 120 and 130 is used, the remaining common electrode line 120 which is not used for repair may apply a voltage to the common electrode 140 of the pixel.

Next, the short-circuit defect at the intersection point of a gate line and a data line is demonstrated with reference to FIG.

As shown in FIG. 4, when an electrical short circuit occurs between the data auxiliary line 200 or a portion where the data line 500 and the gate line 110 cross each other, the above-described gate line disconnection repair method may be performed. Similarly, each repair pattern 210 located at both sides of the intersection shorting point 2 is laser shorted with the gate line 110 and the common electrode line 130, and is located at the left side of the intersection shorting point 2. The common electrode line 130 is separated using a laser from the left part 202 of the repair pattern 210 and the right part 602 of the repair pattern 210 located on the right side, and then the two separated parts 202 and 602 are separated. The common electrode 140, which is connected to the common electrode line 130, is laser separated from portions 302, 402, and 502 adjacent to the common electrode line 130. Next, the gate line 110 is disconnected between the repair pattern 210 and the data line 500 to block a portion of the data signal from flowing to the gate line 110, and the pixel electrode 802 of the corresponding pixel is blocked. The point 802 extending from the pixel electrode line 520 is cut off.

As such, the common electrode line 130 is isolated and the isolation part is short-circuited with the gate line 110 using the repair pattern 210 at both ends of the inter-wiring short-circuit point 2, and the data line 500 and the repair pattern 210 are separated. By disconnecting the gate line 110, the data signal not affected by the gate voltage is properly transmitted to the data line 500, and the short circuit points 12, 22, 32, and 42 are provided at the gate line 110. The gate voltage is transmitted across the intersection shorting point (2).

As shown in Figs. 5 and 6, if the repair pattern structure according to the first embodiment of the present invention is partially changed, the disconnection defect of the data line can be easily repaired.

FIG. 5 is a plan view illustrating a first method of repairing data line disconnection defects using a wiring structure of a thin film transistor substrate for a liquid crystal display according to a second exemplary embodiment of the present invention.

As shown in FIG. 5, the repair pattern 220 is formed to overlap the common electrode lines 120 and 130 and the gate line 110 adjacent to the upper and lower sides of the gate line 110, respectively. When disconnection of the data lines 200 and 500 occurs between the two common electrode lines 120 and 130 where the repair patterns 220 overlap, the data lines 200 and 500 are common above and below the disconnection point 3. Points 13 and 23 intersecting the electrode lines 120 and 130 and repair patterns 220 positioned on the left and right sides of the disconnection point 3 overlap with the common electrode lines 120 and 130. 53 and 63 are respectively laser shorted. Next, the common electrode lines 120 and 130 at the left portions 203 and 303 of the repair pattern 220 positioned on the left side of the data line disconnection point 3 and the right portions 703 and 803 of the repair pattern 220 positioned on the right side. ) Is separated using a laser, and the common electrodes 140 connected to the common electrode lines 120 and 130 between the two repair patterns 220 are adjacent to the common electrode line 130 (103, 403, 503, 603). , 903, 1003, 1103) using a laser.

As such, the disconnected data lines 200 and 500 are electrically shorted to the common electrode lines 120 and 130 at the upper and lower points of the disconnection point, and the common electrode lines 120 and 130 are electrically isolated and shorted to the repair pattern. Through the points 13, 23, 33, 43; 13, 63, 53, 43, the data signal is transmitted to the lower side of the disconnection point by using the common electrode lines 120 and 130 and the repair pattern 220 as paths.

FIG. 6 is a plan view showing a second method of repairing data line disconnection defect using a wiring structure according to the second embodiment of the present invention.

As shown in FIG. 6, when the disconnection of the data lines 200 and 500 occurs between the duplicated common electrode lines 120 and 130 in the pixel, not the two common electrode lines in which the repair patterns 220 overlap at the same time. The data wirings 200 and 500 laser short the points 14 and 24 where the data wires 200 and 500 overlap with the common electrode lines 120 and 130 at the top and bottom of the disconnection point 4, and the left and right portions 104 and 204 of the laser short circuit portion. The common electrode lines 120 and 130 are cut off using a laser at 304 and 404. At this time, the common electrode lines 120 and 130 are disconnected from the common electrode lines 120 and 130 so that the common electrodes 140 and 130 adjacent to the common electrode lines 120 and 130 are not separated from each other. . In addition, the repair pattern 220 laser shorts the portions 34 and 44 overlapping the common electrode lines 34 and 44 so that the common voltage is applied to the right side of the disconnection point of the data lines 200 and 500.

As such, by electrically shorting the wiring to the common electrode line above and below the data wiring disconnection point, and making a path to some common electrode lines and the common electrode, the data signal is properly transmitted below the disconnection line.

Next, a third embodiment in which workability may be improved by reducing the number of times of cutting using a laser will be described with reference to FIGS. 7 and 8.

7 is a plan view illustrating a method of repairing a gate line disconnection defect using a wiring structure of a thin film transistor substrate for a liquid crystal display according to a third exemplary embodiment of the present invention.

As shown in FIG. 7, in the third embodiment of the present invention, as in the previous embodiment, the gate line 110, the data auxiliary line 200, the source electrode and the data line 500, the semiconductor layer 400, The drain electrode 510 and the like are formed. However, the structures of the common electrode wirings and the pixel electrode wirings have different structures.

The common electrode line 120 is formed in a double in parallel with the gate line 110 as in the previous embodiment, the first connection portion 150 extends from the common electrode line 120, the first connection portion 150 The negative common electrode line 160 in the horizontal direction connected to the side is formed. In addition, the plurality of common electrodes 170 extend from the sub common electrode line 160 in the vertical direction.

The pixel electrode line 520 extending from the drain electrode 510 overlaps the common electrode line 120 as in the previous embodiment, and the second connector 550 is connected to the first connector 150 from the pixel electrode line 520. It overlaps and is formed. The secondary pixel electrode line 560 in the horizontal direction connected to the second connector 550 overlaps with the secondary common electrode line 160, and a plurality of pixel electrodes 170 are vertically formed from the secondary common electrode line 160. Extends. The pixel electrode 170 is alternately arranged with the common electrode 170.

In addition, the repair pattern 230 overlaps the gate line 110 and the adjacent common electrode line 120. The repair pattern 230 is formed on the same layer of the same material as the data auxiliary line 200 or the data line 500.

In the third embodiment having such a wiring structure, when disconnection occurs in the gate line 110 as shown in FIG. 7, the repair pattern 230 positioned to the left and right of the disconnection point 5 is replaced with the common electrode line ( Laser short-circuit with the common electrode line 120 and the gate line 110 at the point (25, 15; 35, 45) overlapping with the gate line 110 and 120. Next, the common electrode line 120 is disconnected from the left side of the repair pattern 230 and the common electrode line 120 at the short-circuit point 25 by using a laser, and the repair pattern 230 and the common electrode line 120 placed on the right side are cut off. The common electrode line 120 is disconnected from the right side of the short circuit point 35. Finally, the first and second connectors 150 and 550 are disconnected to prevent the gate signal from being applied to the common electrode 170.

As described above, in the gate line disconnection repairing method using the wiring structure according to the third embodiment, since the common electrode 170 and the pixel electrode 570 do not need to be cut off individually, the number of times of cutting using the laser is shortened by 4 to 5 times. do.

8 is a plan view illustrating a method of repairing a short circuit defect at an intersection portion of a gate line and a data line using a wiring structure according to a third exemplary embodiment of the present invention.

As shown in FIG. 8, when the gate line 110 and the data lines 200 and 500 are shorted at the intersection, the gate line 110 is disconnected at both sides of the short circuit point 6 as in the previous embodiment. A part of the data signal is prevented from flowing to the gate line 110 through the short point 6. In addition, the common electrode line 120 and the gate line at the points 36, 46; 26, 16 overlapping the common electrode line 120 and the gate line 110 with the repair pattern 230 positioned at the left and right of the shorting point 6. After the laser is short-circuited with 110, the common electrode line 120 is disconnected from the left side of the repair pattern 230 on the left side and the short circuit point 36 of the common electrode line 120 using a laser, and the repair pattern 230 on the right side is cut off. ) And the common electrode line 120 at the right side of the short circuit point 26 of the common electrode line 120. Finally, the first and second connectors 150 and 550 are cut off.

As in the method of repairing the disconnection defect of the gate line, in the method of repairing the short circuit of the gate line and the data line, since the common electrode 170 and the pixel electrode 570 do not need to be cut off individually, the number of times of cutting using the laser is 4 to 4 5 times is reduced. Therefore, workability is improved at the time of defect repair.

As described above, by using the thin film transistor substrate for a liquid crystal display device and the repair method thereof according to the present invention, disconnection of the gate line or wiring short circuit at the intersection of the gate line and the data line can be easily repaired, and workability is also improved. .

Claims (20)

Insulated substrate (correction), A plurality of gate lines formed on the insulating substrate in parallel to each other in a horizontal direction; A plurality of common electrode lines formed between two adjacent gate lines, A plurality of common electrodes electrically connected to the common electrode line, A plurality of data lines formed in a vertical direction and insulated from the respective gate lines ; A semiconductor layer insulated from and formed on the gate lines ; A source electrode extending from each of the data wires and overlapping the semiconductor layer; A drain electrode separated from the source electrode and overlapping the semiconductor layer, A plurality of pixel electrodes electrically connected to the drain electrodes and alternately arranged with the plurality of common electrodes; A repair pattern overlapping the common electrode line and the gate line at the same time Thin film transistor substrate for a liquid crystal display device comprising a. (Correction) In paragraph 1, The common electrode line is formed of a double wiring of a first wiring and a second wiring , and the repair pattern overlaps any one of the double wiring. In claim 1, The common electrode line is formed of a double line of a first line and a second line, and the repair pattern overlaps the second line and the first line, which are positioned at both sides of the one gate line, at the same time. Thin film transistor substrate for devices. In claim 1, A first connection part extending from the common electrode line, a sub common electrode line connected to the first connection part and connecting the common electrode as one, a pixel electrode line extending from the drain electrode and overlapping the common electrode line, and extending from the pixel electrode line And a second connection part overlapping the first connection part, and a sub pixel electrode line connected to the pixel electrode on the opposite side of the pixel electrode line and overlapping the sub common electrode line. In claim 1, And the data line includes a data auxiliary line and a data line formed by interposing the data auxiliary line and the interlayer insulating film. In claim 5, And the repair pattern is formed of the same material on the same layer as the data auxiliary line. In claim 5, And the repair pattern is formed of the same material on the same layer as the data line. (Correction) A method of repairing the thin film transistor substrate by causing a disconnection at a first point of the gate line in the thin film transistor substrate for a liquid crystal display device according to claim 1 Short-circuit the repair pattern located on the left and right sides of the first reference to the common electrode line and the gate line; Cutting the common electrode line at a second point outside the left side of the repair pattern positioned at the left side of the first point, Cutting the common electrode line at a third point outside the right side of the repair pattern positioned at the right side of the first point, and Electrically separating the common electrode positioned between the second and third points from the cut common electrode line Method of repairing a thin film transistor substrate for a liquid crystal display device comprising a. In claim 8, And repairing the common electrode positioned between the second and third points individually using a laser. In claim 8, The thin film transistor substrate may include a first connection part extending from the common electrode line, a sub common electrode line connected to the first connection part and connecting the common electrode as one, and a pixel electrode line extending from the drain electrode and overlapping the common electrode line. A second connection part extending from the pixel electrode line and overlapping the first connection part, and a second pixel electrode line connecting the pixel electrode as one and overlapping the sub common electrode line; Repairing the first connection part using a laser to electrically separate the common electrode and the common electrode line positioned between the second and third points. In claim 8, And a secondary common electrode line formed in parallel with the common electrode line and connecting the common electrode as one side of the common electrode line. In claim 8, And the data line comprises a data auxiliary line and a data line formed through the data auxiliary line and an interlayer insulating layer. In claim 12, And the repair pattern is formed of the same material as the data line on the same layer. In claim 12, And the repair pattern is formed on the same layer using the same material as the data auxiliary line. (Correction) In repairing the thin film transistor substrate by generating a short circuit at a first point where the gate line and the data line of the gate line intersect each other in the thin film transistor substrate for a liquid crystal display device according to claim 1, Short-circuiting the repair pattern located at the left and right sides of the first point to the common electrode line and the gate line; Cutting the common electrode line at a second point outside the left side of the repair pattern positioned at the left side of the first point, Cutting the common electrode line at a third point outside the right side of the repair pattern positioned at the right side of the first point, Electrically separating the common electrode located between the second and third points from the cut common electrode line, and Cutting the gate line between the first point and the repair pattern Method of repairing a thin film transistor substrate for a liquid crystal display device comprising a. The method of claim 15, And repairing the common electrode positioned between the second and third points individually using a laser. The method of claim 15, The thin film transistor substrate may include a first connection part extending from the common electrode line, a sub common electrode line connected to the first connection part and connecting the common electrode as one, a pixel electrode line extending from the drain electrode and overlapping the common electrode line, A second connection part extending from the pixel electrode line and overlapping the first connection part, and a sub pixel electrode line connecting the pixel electrode as one and overlapping the sub common electrode line; And repairing the first connection part by using a laser to electrically separate the common electrode and the common electrode line positioned between the second and third points. The method of claim 15, And a secondary common electrode line formed in parallel with the common electrode line and connecting the common electrode as one side of the common electrode line. (Correct) The first common electrode line and the second common electrode line of the rear end pixel in which the repair pattern overlaps in the thin film transistor substrate for liquid crystal display according to claim 1 are disconnected at the first point of the data line, In repairing the thin film transistor substrate, Shorting the repair pattern positioned at left and right of the first point with the first common electrode line and the second common electrode line of the rear pixel; Shorting a portion where the gate line and the data line cross each other above and below the first point; Cutting the first common electrode line and the second common electrode line of the rear end pixel at a second point outside the left side of the repair pattern located at the left side of the first point; Cutting the first common electrode line and the second common electrode line of the rear pixel at a third point outside the right side of the repair pattern located to the right of the first point, and Separating the common electrode located between the second and third points from the first common electrode line and the second common electrode line of the rear pixel. Repair method of a thin film transistor substrate for a liquid crystal display device comprising a. (Correction) In repairing the thin film transistor substrate, the first point of the data line is disconnected between the first and second common electrode lines of the thin film transistor substrate for liquid crystal display device according to claim 1, Shorting second and third points at which the data line overlaps the first and second common electrode lines above and below the first point, and Cutting the first and second common electrode lines to the left and right of the second and third points in such a manner that at least one common electrode is connected to the common electrode. Repair method of a thin film transistor substrate for a liquid crystal display device comprising a.