KR0156201B1 - Thin film transistor array structure and its manufacturing method of liquid crystal display device with repair line - Google Patents
Thin film transistor array structure and its manufacturing method of liquid crystal display device with repair lineInfo
- Publication number
- KR0156201B1 KR0156201B1 KR1019950023863A KR19950023863A KR0156201B1 KR 0156201 B1 KR0156201 B1 KR 0156201B1 KR 1019950023863 A KR1019950023863 A KR 1019950023863A KR 19950023863 A KR19950023863 A KR 19950023863A KR 0156201 B1 KR0156201 B1 KR 0156201B1
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- South Korea
- Prior art keywords
- repair
- line
- repair line
- thin film
- film transistor
- Prior art date
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136259—Repairing; Defects
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136259—Repairing; Defects
- G02F1/136263—Line defects
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136259—Repairing; Defects
- G02F1/136272—Auxiliary lines
Abstract
본 발명은 리페어라인을 갖는 액정표시장치의 박막트랜지스터 어레이구조 및 이의 제조방법에 관한 것으로, 리페어되는 부분의 레이저 용접을 용이하게 할 수 있도록 하기 위한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin film transistor array structure of a liquid crystal display device having a repair line and a method of manufacturing the same, to facilitate laser welding of a repaired part.
본 발명은 기판상에 형성된 복수개의 버스라인과, 상기 복수개의 버스라인상에 절연막을 개재하여 복수개의 버스라인과 수직으로 교차되어 형성된 리레어라인, 상기 복수개의 버스라인과 상기 리페어라인이 교차되는 부분에 형성되는 리페어영역, 상기 복수개의 버스라인 및 리페어라인 상부에 형성되며, 상기 리페어영역에 개구부를 갖는 패시베이션막을 포함하는 리페어라인을 갖는 액정표시장치의 박막트랜지스터 어레이구조를 제공한다.According to an embodiment of the present invention, a plurality of bus lines formed on a substrate and a plurality of bus lines are formed to vertically intersect with a plurality of bus lines via an insulating layer on the plurality of bus lines, and the plurality of bus lines and the repair line cross each other. According to an aspect of the present invention, there is provided a thin film transistor array structure of a liquid crystal display device having a repair region formed at a portion thereof, a plurality of bus lines, and a repair line formed over the repair line and including a passivation layer having an opening in the repair region.
Description
제1도는 액정표시장치의 하판 어레이 구조도.1 is a bottom plate array structure diagram of a liquid crystal display device.
제2도는 종래의 액정표시장치의 버스라인과 리페어라인의 교차부분을 도시한 개략도.2 is a schematic diagram showing an intersection of a bus line and a repair line of a conventional liquid crystal display.
제3도는 본 발염에 의한 리페어라인을 갖는 액정표시장치의 박막트랜지스터 어레이구조에 있어서의 리페어부분을 도시한 평면도.FIG. 3 is a plan view showing a repair portion of a thin film transistor array structure of a liquid crystal display device having a repair line caused by the present flame.
제4도는 본 발명에 의한 리페어라인을 갖는 액정표시장치의 박막트랜지스터 어레이구조에 있어서의 리페어부분을 도시한 단면구조도.4 is a cross-sectional structure diagram showing a repair portion in a thin film transistor array structure of a liquid crystal display device having a repair line according to the present invention.
제5도는 본 발명에 리페어라인을 갖는 액정표시장치의 박막트랜지스터 어레이구조에 있어서의 리페어공정후의 단면구조도.5 is a cross-sectional structure diagram after a repair process in a thin film transistor array structure of a liquid crystal display device having a repair line according to the present invention.
제6도는 본 발명의 다른 실시예에 의한 리페어구조를 도시한 단면도.6 is a cross-sectional view showing a repair structure according to another embodiment of the present invention.
제7도는 본 발명의 또 다른 실시예에 의한 리페어구조를 도시한 평면도.7 is a plan view showing a repair structure according to another embodiment of the present invention.
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
10 : 기판 11 : 버스라인10 substrate 11 bus line
12 : 절연막 13 : 리페어라인12: insulating film 13: repair line
13 : 리페어라인 개구부 15 : 패시베이션막13 repair line opening part 15 passivation film
16 : 패시베이션막 개구부16: passivation film opening
본 발명은 리페어라인(repair line)을 갖는 액정표시장치의 박막트랜지스터 어레이구조 및 이의 제조방법에 관한 것으로, 특히 액정표시장치의 박막트랜지스터 어레이 내부에 단선(open) 또는 단락(short)의 발생되었을때 이를 수리하기 위해 리페어라인과 버스라인을 레이저로 용접할 경우 이를 용이하게 행할 수 있도록 한 구조 및 이의 형성방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin film transistor array structure of a liquid crystal display device having a repair line, and a method of manufacturing the same. In particular, when an open or short circuit occurs inside the thin film transistor array of a liquid crystal display device. The present invention relates to a structure and a method of forming the same so that the repair line and the bus line can be easily welded by laser to repair them.
일반적으로 액정표시장치의 하판에 박막트랜지스터를 제작했을 때 박막트랜지스터 어레이내에서 게이트 버스라인이나 데이터 버스라인이 단락 또는 단선된 상태이면 불량 패널이 된다.In general, when a thin film transistor is fabricated on a lower plate of a liquid crystal display device, if a gate bus line or a data bus line is shorted or disconnected in the thin film transistor array, the panel becomes a defective panel.
따라서 이를 수리하기 위한 리페어라인을 박막트랜지스터가 형성된 외측에 별도로 형성하여 단락 또는 단선이 발생한 데이터 버스라인 또는 게이트 버스라인을 리페어라인에 연결시켜 패널상의 박막트랜지스터가 정상동작되도록 한다. 제1도는 액정표시장치 하판의 어레이를 나타낸 평면도로서, 게이트 버스라인(1)이 게이트패드(1a)에 연결되어 수평방향으로 배열되고, 데이터 버스라인(3)은 데이터패드(3a)에 연결되어 수직 방향으로 배열된다. 그리고 리페어라인(5)은 박막트랜지스터가 형성된 영역 외부에 별도로 형성되어 리페어패드(5a)에 연결된다.Therefore, a repair line for repairing this is separately formed on the outside of the thin film transistor, and a data bus line or gate bus line having a short circuit or disconnection is connected to the repair line so that the thin film transistor on the panel operates normally. FIG. 1 is a plan view showing an array of lower substrates of a liquid crystal display, in which a gate bus line 1 is connected to the gate pad 1a and arranged in a horizontal direction, and the data bus line 3 is connected to the data pad 3a. Arranged in the vertical direction. The repair line 5 is separately formed outside the region where the thin film transistor is formed and connected to the repair pad 5a.
이와 같은 배선구조를 갖는 액정표시장치의 하판을 제작한 후, 게이트패드(1a) 및 데이터패드(3a)에 신호를 인가하여 패널의 양, 부를 점검하게 되는데 이때, 어레이내에서 버스라인간의 단락이나 단선이 발견되면 두 라인간의 단락일 경우에는 단락된 부위(2)의 양단을 컷팅(cutting)하고 단락이 발생된 버스라인을 교차부분(7)에서 리페어라인(5)에 연결시켜 구동한다.After manufacturing the lower plate of the liquid crystal display device having such a wiring structure, a signal is applied to the gate pad 1a and the data pad 3a to check the quantity and the part of the panel. If a disconnection is found, in the case of a short circuit between two lines, both ends of the shorted portion 2 are cut, and the bus line having the short circuit is connected to the repair line 5 at the intersection 7 to be driven.
그리고 라인이 단선되었을 경우에는 버스라인(1, 3)과 리페어라인(5)이 절연층으로 절연되어 교차되는 부분(리페어부분)(7)을 레이저를 이용하여 연결시킴으로써 단선에 의해 구동되지 않는 부분의 박막트랜지스터를 구동되도록 한다. 상기와 같이 패널에서 리페어라인과 게이트/데이타 버스라인(1,3)의 교차부분(7) 구조를 첨부한 도면을 참조하여 설명하면 다음과 같다.If the line is disconnected, the portion where the bus lines 1 and 3 and the repair line 5 are insulated by an insulating layer and connected to each other (repair portion) 7 by using a laser is not driven by disconnection. To drive the thin film transistor. Referring to the accompanying drawings, the structure of the intersection portion 7 of the repair line and the gate / data bus lines 1 and 3 in the panel is described as follows.
제2도는 종래의 액정표시장치의 하판에서 리페어라인과 게이트/데이타 버스라인 교차되는 부분을 나타낸 개략도로서, 모든 게이트/데이타 버스라인(1,3)은 리페어라인(5)과의 교차부분을 가지게 되며 게이트/데이타 버스라인과 리페어라인사이는 절연층으로 절연되어 있다.2 is a schematic diagram showing a portion where a repair line intersects a gate / data bus line in a lower panel of a conventional liquid crystal display, and all gate / data bus lines 1 and 3 have an intersection with a repair line 5. The insulating layer is insulated between the gate / data bus line and the repair line.
따라서 패널 제작후 버스라인에 전원을 인가하여 버스라인의 단선 또는 단락 여부를 점검하여 버스라인(1,3)이 어레이내에서 단선되었을 경우는 버스라인(1,3)과 리페어라인(5)이 교차되는 부분(7)을 레이저로 용접하여 연결시키고, 단락이 발생되었을 때에는 레이저를 이용하여 단락된 부분의 양단을 컷팅하고 단락이 발생한 버스라인(1,3)과 리페어라인(5)이 교차되는 부분(7)을 레이저로 처리하뎌 연결시킴으로써 단선 또는 단락된 라인에 연결된 트랜지스터가 정상 동작되도록 한다.Therefore, after the panel is fabricated, power is applied to the bus lines to check whether the bus lines are disconnected or short-circuited. When the bus lines 1 and 3 are disconnected in the array, the bus lines 1 and 3 and the repair line 5 When the shorting occurs, the intersection 7 is connected by laser welding, and when a short circuit occurs, both ends of the shorted part are cut using a laser, and the bus lines 1 and 3 where the short circuit occur and the repair line 5 intersect. The portion 7 is laser processed and connected to allow transistors connected to disconnected or shorted lines to operate normally.
그러나 이와 같은 종래 기술은 리페어되는 부분이 버스라인과 리페어라인의 교차부분을 레이저를 이용하여 용접할 때 라인이 끊어지는 등의 문제점이 발생할 수 있다.However, such a conventional technique may cause a problem such that the line is broken when the portion to be repaired is welded to the intersection of the bus line and the repair line by using a laser.
본 발명은 이와 같은 문제를 해결하기 위한 것으로 리페어되는 부분의 레이저 용접을 용이하게 할 수 있도록 한 구조 및 이의 제조방법을 제공하는데 그 목적이 있다.An object of the present invention is to provide a structure and a method of manufacturing the same to facilitate the laser welding of the repaired portion to solve such a problem.
상기 목적을 달성하기 위한 본 발명의 리페어라인을 갖는 액정표시장치의 박막트랜지스터 어레이구조는 기판상에 형성된 복수개의 버스라인과, 상기 복수개의 버스라인상에 절연막을 개재하여 복수개의 버스라인과 수직으로 교차되어 형성된 리페어라인, 상기 복수개의 버스라인과 상기 리페어라인이 교차되는 부분에 형성되는 리페어영역, 상기 복수개의 버스라인 및 리페어라인 상부에 형성되며, 상기 리페어영역에 개구부를 갖는 패시베이션막을 포함하여 이루어진다.A thin film transistor array structure of a liquid crystal display device having a repair line of the present invention for achieving the above object is a plurality of bus lines formed on a substrate, and perpendicular to the plurality of bus lines through an insulating film on the plurality of bus lines. And a repair line formed to intersect, a repair region formed at a portion where the plurality of bus lines and the repair line intersect, a passivation film formed on the plurality of bus lines and the repair line, and having an opening in the repair region. .
상기 목적을 달성하기 위한 본 발명의 리페어라인을 갖는 액정표시장치의 박막트랜지스터 어레이구조 제조방법은 기판 소정영역에 버스라인을 형성하는 단계와, 상기 버스라인이 형성된 기판 전면에 절연막을 형성하는 단계, 상기 절연막 상부에 도전층을 형성하는 단계, 상기 도전층을 소정패턴으로 패터닝하여 박막트랜지스터의 전극부와 버스라인 및 리페어라인을 동시에 형성하는 단계, 상기 기판 전면에 패시베이션막을 형성하는 단계, 및 상기 패시베이션막을 선택적으로 식각하여 기판 소정영역의 패드부를 노출시킴과 동시에 소정부분에 개구부를 형성하는 단계를 포함하여 이루어진다.According to an aspect of the present invention, there is provided a method of manufacturing a thin film transistor array structure of a liquid crystal display device having a repair line, including forming a bus line on a predetermined region of a substrate, forming an insulating film on an entire surface of the substrate on which the bus line is formed; Forming a conductive layer on the insulating layer, patterning the conductive layer in a predetermined pattern to simultaneously form an electrode portion, a bus line, and a repair line of the thin film transistor, forming a passivation film on the entire surface of the substrate, and the passivation Selectively etching the film to expose the pad portion of the predetermined region of the substrate and forming an opening in the predetermined portion.
이하, 첨부된 도면을 참조하여 본 발명을 상세히 설명한다.Hereinafter, with reference to the accompanying drawings will be described in detail the present invention.
본 발명에 의한 박막트랜지스터 어레이의 리페어라인 구조는 도시된 바와 같이 리페어되는 부분인 버스라인(게이트라인 또는 데이터라인)(11)과 리페어라인(13)이 교차하는 부분에 패시베이션(passivation)막의 개구부(16)가 형성되어 있다. 즉, 리페어라인(13)을 형성한 후 그 전면에 형성되는 패시베이션막에 개구부(16)가 형성되며, 이 개구부(16)에 의해 리페어되는 부분인 버스라인(11)과 리페어라인(13)이 교차하는 부분이 노출된다.The repair line structure of the thin film transistor array according to the present invention has an opening of a passivation film at a portion where the bus line (gate line or data line) 11 and the repair line 13 intersect each other, as shown in the figure. 16) is formed. That is, after the repair line 13 is formed, an opening 16 is formed in the passivation film formed on the entire surface thereof, and the bus line 11 and the repair line 13 which are parts repaired by the opening 16 are formed. Intersecting parts are exposed.
또한, 리페어되는 부분, 즉 상기 패시베이션막의 개구부(16)가 형성된 영역의 리페어라인(13)부위에 리페어라인 개구부(14)가 형성되어 있다.In addition, a repair line opening 14 is formed at the repair line 13 in a portion to be repaired, that is, a region where the opening 16 of the passivation film is formed.
제3도의 A-A'선에 따른 단면구조를 제4도에 도시하였다.4 is a cross-sectional structure along the line AA ′ of FIG. 3.
본 발명의 리페어구조는 도시된 바와 같이 기판(10)상에 버스라인(11)이 형성되고, 그 전면에 절연막(12)이 형성되고, 절연막 상부에 리페어라인(13)이 형성되는바, 상기 리페어라인(13)과 버스라인(11)이 교차하는 부분의 리페어라인(13)부위에는 리페어라인 개구부(14)가 형성되어 있다. 그리고 리페어라인(13) 상부에 패시베이션막(15)이 형성되는바, 역시 리페어라인(13)과 버스라인(11)이 교차하는 부분의 패시베이션막(15) 부위에 패시베이션막 개구부(16)가 형성되어 있다.In the repair structure of the present invention, as shown, the bus line 11 is formed on the substrate 10, the insulating film 12 is formed on the entire surface thereof, and the repair line 13 is formed on the insulating film. A repair line opening 14 is formed at the repair line 13 at a portion where the repair line 13 and the bus line 11 cross each other. The passivation film 15 is formed on the repair line 13, and the passivation film opening 16 is formed at the passivation film 15 at the portion where the repair line 13 and the bus line 11 cross each other. It is.
상기와 같이 이루어진 본 발명의 리페어구조에 있어서, 버스라인(11)에 단선 또는 단락이 발생하여 레이저 용접으로 연결할 경우 상기와 같이 패시베이션막과 리페어라인에 개구부(16,14)가 형성되어 있기 때문에 레이저 용접을 용이하게 행할 수 있게 된다.In the repair structure of the present invention made as described above, when the disconnection or short circuit occurs in the bus line 11 and connected by laser welding, the openings 16 and 14 are formed in the passivation film and the repair line as described above. Welding can be performed easily.
제5도는 레이저 용접후의 단면구조를 도시한 것이다.5 shows a cross-sectional structure after laser welding.
본 발명의 다른 실시예로서 제6도에 도시한 바와 같이 리페어라인(13)에는 개구부를 형성하지 않고, 패시베이션막(15)에만 개구부를 형성하여도 버스라인의 리페어를 위한 레이저 용접을 종래보다 용이하게 행할 수 있다.As another embodiment of the present invention, as shown in FIG. 6, laser welding for repair of the bus line is easier than before even if the opening is not formed in the repair line 13 and only the opening is formed in the passivation film 15. FIG. I can do it.
한편, 리페어 부분을 제7도에 도시된 바와 같이 버스라인(11)과 리페어라인(13)이 교차되는 부분 이외의 다른 부분에 버스라인(11)과 개구부를 갖는 리페어라인(13)이 겹쳐져 위치하도록 별도의 패턴으로 형성할 수도 있다. 이와 같이 리페어구조를 형성하면, 리페어를 위한 레이저 용접을 용이하게 할 수 있고, 리페어가 잘못 되었을 경우 잘못된 부분을 제거하고 교차부분을 이용하여 리페어할 수 있으며, 리페어라인과 버스라인간에 단락이 발생하였을 경우 단락된 지점을 컷팅하고 다시 리페어할 수 있는 잇점이 있다.Meanwhile, as shown in FIG. 7, the repair line 13 having the opening and the bus line 11 are overlapped with each other at a portion other than the portion where the bus line 11 and the repair line 13 cross each other. It may be formed in a separate pattern so as to. If the repair structure is formed in this way, laser welding for the repair can be facilitated, and if the repair is wrong, the wrong part can be removed and repaired using the intersection part, and a short circuit between the repair line and the bus line may occur. In this case, there is an advantage that the shorted point can be cut and repaired again.
본 발명의 박막트랜지스터 어레이 리페어구조를 형성하는 방법을 제4도를 참조하여 설명하면 다음과 같다.A method of forming the thin film transistor array repair structure of the present invention will be described with reference to FIG.
통상의 액정표시소자의 박막트랜지스터 어레이 제조공정에 따라 박막트랜지스터 어레이를 형성하는바, 게이트전극 및 게이트 버스라인, 활성층, 오믹콘택층을 형성한다. 이후, 도전층을 형성하고 이를 사진식각공정을 통해 소정패턴으로 패터닝하여 소오스 및 드레인전극과 데이터 버스라인 및 리페어라인을 형성하는바, 리페어라인을 소정부분에 개구부를 갖는 구조로 패터닝한다. 이어서 전면에 패시베이션막을 형성한 후, 패드부를 선택적으로 노출시키기 위한 사진 식각공정을 행하는바, 이때, 패시베이션막 소정부분에 개구부가 동시에 형성되도록 한다.A thin film transistor array is formed in accordance with a conventional thin film transistor array manufacturing process of a liquid crystal display device to form a gate electrode, a gate bus line, an active layer, and an ohmic contact layer. Thereafter, a conductive layer is formed and patterned into a predetermined pattern through a photolithography process to form source and drain electrodes, data bus lines and repair lines. The repair line is patterned into a structure having openings in predetermined portions. Subsequently, after the passivation film is formed on the entire surface, a photolithography process for selectively exposing the pad part is performed. At this time, openings are simultaneously formed in predetermined portions of the passivation film.
즉, 본 발명의 박막트랜지스터 어레이 리페어구조는 별도의 추가되는 공정없이 박막트랜지스터 어레이 제조공정의 진행중에 동시에 형성할 수 있다는 잇점을 갖는다.That is, the thin film transistor array repair structure of the present invention has the advantage that it can be simultaneously formed during the process of manufacturing the thin film transistor array without any additional process.
이상 상술한 바와 같이 본 발명에 의하면, 액정표시장치의 박막트랜지스터 어레이에 있어서 버스라인에 단서 또는 단락이 발생했을 경우 이를 매우 용이하게 리페어할 수 있다.As described above, according to the present invention, when a clue or a short circuit occurs in the bus line in the thin film transistor array of the liquid crystal display, it can be repaired very easily.
Claims (7)
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| KR1019950023863A KR0156201B1 (en) | 1995-08-02 | 1995-08-02 | Thin film transistor array structure and its manufacturing method of liquid crystal display device with repair line |
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| WO2016086603A1 (en) * | 2014-12-05 | 2016-06-09 | 京东方科技集团股份有限公司 | Metal wire repairing method and repairing device |
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| WO2016086603A1 (en) * | 2014-12-05 | 2016-06-09 | 京东方科技集团股份有限公司 | Metal wire repairing method and repairing device |
| US9772533B2 (en) | 2014-12-05 | 2017-09-26 | Boe Technology Group Co., Ltd. | Method and device for repairing metal wire |
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