JPH0974064A - 荷電粒子線によるパターン転写方法及び転写装置 - Google Patents

荷電粒子線によるパターン転写方法及び転写装置

Info

Publication number
JPH0974064A
JPH0974064A JP8144404A JP14440496A JPH0974064A JP H0974064 A JPH0974064 A JP H0974064A JP 8144404 A JP8144404 A JP 8144404A JP 14440496 A JP14440496 A JP 14440496A JP H0974064 A JPH0974064 A JP H0974064A
Authority
JP
Japan
Prior art keywords
mask
charged particle
particle beam
small
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8144404A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0974064A5 (https=
Inventor
Teruaki Okino
輝昭 沖野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nikon Corp
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Priority to JP8144404A priority Critical patent/JPH0974064A/ja
Priority to US08/670,436 priority patent/US5989753A/en
Publication of JPH0974064A publication Critical patent/JPH0974064A/ja
Publication of JPH0974064A5 publication Critical patent/JPH0974064A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Electron Beam Exposure (AREA)
JP8144404A 1995-06-26 1996-06-06 荷電粒子線によるパターン転写方法及び転写装置 Pending JPH0974064A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP8144404A JPH0974064A (ja) 1995-06-26 1996-06-06 荷電粒子線によるパターン転写方法及び転写装置
US08/670,436 US5989753A (en) 1995-06-26 1996-06-26 Method, apparatus, and mask for pattern projection using a beam of charged particles

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP7-159580 1995-06-26
JP15958095 1995-06-26
JP8144404A JPH0974064A (ja) 1995-06-26 1996-06-06 荷電粒子線によるパターン転写方法及び転写装置

Publications (2)

Publication Number Publication Date
JPH0974064A true JPH0974064A (ja) 1997-03-18
JPH0974064A5 JPH0974064A5 (https=) 2004-07-08

Family

ID=26475822

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8144404A Pending JPH0974064A (ja) 1995-06-26 1996-06-06 荷電粒子線によるパターン転写方法及び転写装置

Country Status (2)

Country Link
US (1) US5989753A (https=)
JP (1) JPH0974064A (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6376847B1 (en) 1998-08-24 2002-04-23 Matsushia Electric Industrial Co., Ltd. Charged particle lithography method and system
EP0969326B1 (en) * 1998-07-01 2012-10-17 ASML Netherlands B.V. Lithographic apparatus

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11329945A (ja) * 1998-05-08 1999-11-30 Nikon Corp 荷電粒子ビーム転写方法及び荷電粒子ビーム転写装置
US6617585B1 (en) 2000-05-24 2003-09-09 Nikon Corporation Optimized curvilinear variable axis lens doublet for charged particle beam projection system

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5260151A (en) * 1991-12-30 1993-11-09 At&T Bell Laboratories Device manufacture involving step-and-scan delineation
US5376505A (en) * 1992-03-16 1994-12-27 At&T Corp. Device fabrication entailing submicron imaging
US5523580A (en) * 1993-12-23 1996-06-04 International Business Machines Corporation Reticle having a number of subfields

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0969326B1 (en) * 1998-07-01 2012-10-17 ASML Netherlands B.V. Lithographic apparatus
US6376847B1 (en) 1998-08-24 2002-04-23 Matsushia Electric Industrial Co., Ltd. Charged particle lithography method and system

Also Published As

Publication number Publication date
US5989753A (en) 1999-11-23

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