JPH097378A5 - - Google Patents

Info

Publication number
JPH097378A5
JPH097378A5 JP1996173018A JP17301896A JPH097378A5 JP H097378 A5 JPH097378 A5 JP H097378A5 JP 1996173018 A JP1996173018 A JP 1996173018A JP 17301896 A JP17301896 A JP 17301896A JP H097378 A5 JPH097378 A5 JP H097378A5
Authority
JP
Japan
Prior art keywords
terminal
switch
terminals
coupled
storage element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1996173018A
Other languages
English (en)
Japanese (ja)
Other versions
JPH097378A (ja
Filing date
Publication date
Application filed filed Critical
Publication of JPH097378A publication Critical patent/JPH097378A/ja
Publication of JPH097378A5 publication Critical patent/JPH097378A5/ja
Pending legal-status Critical Current

Links

JP8173018A 1995-06-14 1996-06-11 データ記憶素子およびデータ復元方法 Pending JPH097378A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US49036895A 1995-06-14 1995-06-14
US490368 1995-06-14

Publications (2)

Publication Number Publication Date
JPH097378A JPH097378A (ja) 1997-01-10
JPH097378A5 true JPH097378A5 (enExample) 2004-09-16

Family

ID=23947748

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8173018A Pending JPH097378A (ja) 1995-06-14 1996-06-11 データ記憶素子およびデータ復元方法

Country Status (3)

Country Link
EP (1) EP0749127B1 (enExample)
JP (1) JPH097378A (enExample)
DE (1) DE69615457T2 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100224673B1 (ko) * 1996-12-13 1999-10-15 윤종용 불휘발성 강유전체 메모리장치 및 그의 구동방법
US6097624A (en) 1997-09-17 2000-08-01 Samsung Electronics Co., Ltd. Methods of operating ferroelectric memory devices having reconfigurable bit lines
KR100297874B1 (ko) 1997-09-08 2001-10-24 윤종용 강유전체랜덤액세스메모리장치
JP2000268581A (ja) 1999-03-17 2000-09-29 Fujitsu Ltd Romデータを保持する強誘電体メモリ装置
JP4129453B2 (ja) 2004-12-01 2008-08-06 株式会社東芝 半導体記憶装置、半導体記憶装置の動作方法および半導体記憶装置のテスト方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1340340C (en) * 1987-06-02 1999-01-26 Joseph T. Evans, Jr. Non-volatile memory circuit using ferroelectric capacitor storage element
US5432731A (en) * 1993-03-08 1995-07-11 Motorola, Inc. Ferroelectric memory cell and method of sensing and writing the polarization state thereof

Similar Documents

Publication Publication Date Title
US5579257A (en) Method for reading and restoring data in a data storage element
EP0293798B1 (en) Non-volatile memory ciruit using ferroelectric capacitor storage element
JP2002529876A5 (enExample)
US5621680A (en) Data storage element and method for reading data therefrom
EP0892408A3 (en) Ferroelectric memory device
WO2002082504A3 (en) Data restore in thyristor-based memory
KR920006975A (ko) 반도체 메모리 회로
TW492005B (en) Nonvolatile ferroelectric memory device and method for driving same
JP2005536827A5 (enExample)
JPH097378A5 (enExample)
EP0811982A3 (en) Non-volatile ferroelectric memory device for storing data bits restored upon power-on and intermittently refreshed
KR880009376A (ko) 반도체 기억장치
JPH0758594B2 (ja) ダイナミック型半導体記憶装置
KR970067366A (ko) 복수 비트 데이타를 기억하는 메모리 셀을 가진 디램
JPS60123798U (ja) 静的半導体記憶装置のビツト線をバイアスするためのバツクアツプ電力回路
JPS6227843A (ja) 電子装置
JP2000268581A5 (enExample)
KR900015144A (ko) 반도체 기억장치
EP0398244A3 (en) Dynamic type random-acces memory
JP2003059258A5 (enExample)
EP0749127B1 (en) Data storage element and method for restoring data
EP0214508A3 (en) Integrated semiconducteur memory
KR970076817A (ko) 강유전체 메모리
KR920003319A (ko) 반도체기억장치
CA2039496A1 (en) Information transfer method, information transfer apparatus, and its driving method