JP2003059258A5 - - Google Patents

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Publication number
JP2003059258A5
JP2003059258A5 JP2002207874A JP2002207874A JP2003059258A5 JP 2003059258 A5 JP2003059258 A5 JP 2003059258A5 JP 2002207874 A JP2002207874 A JP 2002207874A JP 2002207874 A JP2002207874 A JP 2002207874A JP 2003059258 A5 JP2003059258 A5 JP 2003059258A5
Authority
JP
Japan
Prior art keywords
memory cell
switch
opening
selected memory
reading
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2002207874A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003059258A (ja
JP4067897B2 (ja
Filing date
Publication date
Priority claimed from US09/910,823 external-priority patent/US6515896B1/en
Application filed filed Critical
Publication of JP2003059258A publication Critical patent/JP2003059258A/ja
Publication of JP2003059258A5 publication Critical patent/JP2003059258A5/ja
Application granted granted Critical
Publication of JP4067897B2 publication Critical patent/JP4067897B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP2002207874A 2001-07-24 2002-07-17 読出し時間を短縮したメモリデバイス Expired - Fee Related JP4067897B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/910,823 US6515896B1 (en) 2001-07-24 2001-07-24 Memory device with short read time
US09/910823 2001-07-24

Publications (3)

Publication Number Publication Date
JP2003059258A JP2003059258A (ja) 2003-02-28
JP2003059258A5 true JP2003059258A5 (enExample) 2005-05-12
JP4067897B2 JP4067897B2 (ja) 2008-03-26

Family

ID=25429375

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002207874A Expired - Fee Related JP4067897B2 (ja) 2001-07-24 2002-07-17 読出し時間を短縮したメモリデバイス

Country Status (6)

Country Link
US (1) US6515896B1 (enExample)
EP (1) EP1288959A3 (enExample)
JP (1) JP4067897B2 (enExample)
KR (1) KR100845524B1 (enExample)
CN (1) CN1229807C (enExample)
TW (1) TWI222062B (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002170377A (ja) * 2000-09-22 2002-06-14 Mitsubishi Electric Corp 薄膜磁性体記憶装置
US6724651B2 (en) * 2001-04-06 2004-04-20 Canon Kabushiki Kaisha Nonvolatile solid-state memory and method of driving the same
DE10123593C2 (de) * 2001-05-15 2003-03-27 Infineon Technologies Ag Magnetische Speicheranordnung
US6778431B2 (en) * 2002-12-13 2004-08-17 International Business Machines Corporation Architecture for high-speed magnetic memories
US6775195B1 (en) 2003-02-28 2004-08-10 Union Semiconductor Technology Center Apparatus and method for accessing a magnetoresistive random access memory array
US20060236027A1 (en) * 2005-03-30 2006-10-19 Sandeep Jain Variable memory array self-refresh rates in suspend and standby modes
US7454586B2 (en) * 2005-03-30 2008-11-18 Intel Corporation Memory device commands
JP4883982B2 (ja) * 2005-10-19 2012-02-22 ルネサスエレクトロニクス株式会社 不揮発性記憶装置
CN105006244B (zh) * 2015-05-13 2017-10-10 湖北中部慧易数据科技有限公司 一种信号放大器、磁存储器的读取电路及其操作方法

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4061999A (en) * 1975-12-29 1977-12-06 Mostek Corporation Dynamic random access memory system
US5784327A (en) * 1991-06-12 1998-07-21 Hazani; Emanuel Memory cell array selection circuits
US5477482A (en) 1993-10-01 1995-12-19 The United States Of America As Represented By The Secretary Of The Navy Ultra high density, non-volatile ferromagnetic random access memory
US5640343A (en) 1996-03-18 1997-06-17 International Business Machines Corporation Magnetic memory array using magnetic tunnel junction devices in the memory cells
JP2848325B2 (ja) * 1996-03-28 1999-01-20 日本電気株式会社 半導体記憶装置
US5748519A (en) 1996-12-13 1998-05-05 Motorola, Inc. Method of selecting a memory cell in a magnetic random access memory device
JPH10223991A (ja) 1997-01-31 1998-08-21 Ando Electric Co Ltd 可変波長レーザ光源
US5852574A (en) 1997-12-24 1998-12-22 Motorola, Inc. High density magnetoresistive random access memory device and operating method thereof
US6219273B1 (en) * 1998-03-02 2001-04-17 California Institute Of Technology Integrated semiconductor-magnetic random access memory system
US5986925A (en) 1998-04-07 1999-11-16 Motorola, Inc. Magnetoresistive random access memory device providing simultaneous reading of two cells and operating method
US5946227A (en) * 1998-07-20 1999-08-31 Motorola, Inc. Magnetoresistive random access memory with shared word and digit lines
US6111781A (en) * 1998-08-03 2000-08-29 Motorola, Inc. Magnetic random access memory array divided into a plurality of memory banks
US5969978A (en) 1998-09-30 1999-10-19 The United States Of America As Represented By The Secretary Of The Navy Read/write memory architecture employing closed ring elements
DE19853447A1 (de) * 1998-11-19 2000-05-25 Siemens Ag Magnetischer Speicher
US6055178A (en) 1998-12-18 2000-04-25 Motorola, Inc. Magnetic random access memory with a reference memory array
JP3773031B2 (ja) * 1999-01-13 2006-05-10 インフィネオン テクノロジーズ アクチエンゲゼルシャフト Ｍｒａｍ用の読出／書込構造
US6134138A (en) 1999-07-30 2000-10-17 Honeywell Inc. Method and apparatus for reading a magnetoresistive memory
US6609174B1 (en) * 1999-10-19 2003-08-19 Motorola, Inc. Embedded MRAMs including dual read ports
US6188615B1 (en) 1999-10-29 2001-02-13 Hewlett-Packard Company MRAM device including digital sense amplifiers
US6128239A (en) 1999-10-29 2000-10-03 Hewlett-Packard MRAM device including analog sense amplifiers
US6473336B2 (en) * 1999-12-16 2002-10-29 Kabushiki Kaisha Toshiba Magnetic memory device
US6185143B1 (en) 2000-02-04 2001-02-06 Hewlett-Packard Company Magnetic random access memory (MRAM) device including differential sense amplifiers
KR100451096B1 (ko) * 2000-09-19 2004-10-02 엔이씨 일렉트로닉스 가부시키가이샤 자기메모리셀어레이를 갖는 비휘발성 반도체메모리장치
JP4667594B2 (ja) * 2000-12-25 2011-04-13 ルネサスエレクトロニクス株式会社 薄膜磁性体記憶装置
JP3812805B2 (ja) * 2001-01-16 2006-08-23 日本電気株式会社 トンネル磁気抵抗素子を利用した半導体記憶装置

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