CN1229807C - 具有短读出时间的存储设备 - Google Patents

具有短读出时间的存储设备 Download PDF

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Publication number
CN1229807C
CN1229807C CNB021269521A CN02126952A CN1229807C CN 1229807 C CN1229807 C CN 1229807C CN B021269521 A CNB021269521 A CN B021269521A CN 02126952 A CN02126952 A CN 02126952A CN 1229807 C CN1229807 C CN 1229807C
Authority
CN
China
Prior art keywords
read
memory cell
write
bit line
switch
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CNB021269521A
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English (en)
Chinese (zh)
Other versions
CN1399276A (zh
Inventor
L·T·特兰
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Hewlett Packard Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hewlett Packard Co filed Critical Hewlett Packard Co
Publication of CN1399276A publication Critical patent/CN1399276A/zh
Application granted granted Critical
Publication of CN1229807C publication Critical patent/CN1229807C/zh
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1653—Address circuits or decoders
    • G11C11/1655—Bit-line or column circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
CNB021269521A 2001-07-24 2002-07-24 具有短读出时间的存储设备 Expired - Lifetime CN1229807C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/910823 2001-07-24
US09/910,823 US6515896B1 (en) 2001-07-24 2001-07-24 Memory device with short read time

Publications (2)

Publication Number Publication Date
CN1399276A CN1399276A (zh) 2003-02-26
CN1229807C true CN1229807C (zh) 2005-11-30

Family

ID=25429375

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB021269521A Expired - Lifetime CN1229807C (zh) 2001-07-24 2002-07-24 具有短读出时间的存储设备

Country Status (6)

Country Link
US (1) US6515896B1 (enExample)
EP (1) EP1288959A3 (enExample)
JP (1) JP4067897B2 (enExample)
KR (1) KR100845524B1 (enExample)
CN (1) CN1229807C (enExample)
TW (1) TWI222062B (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002170377A (ja) * 2000-09-22 2002-06-14 Mitsubishi Electric Corp 薄膜磁性体記憶装置
US6724651B2 (en) * 2001-04-06 2004-04-20 Canon Kabushiki Kaisha Nonvolatile solid-state memory and method of driving the same
DE10123593C2 (de) * 2001-05-15 2003-03-27 Infineon Technologies Ag Magnetische Speicheranordnung
US6778431B2 (en) * 2002-12-13 2004-08-17 International Business Machines Corporation Architecture for high-speed magnetic memories
US6775195B1 (en) 2003-02-28 2004-08-10 Union Semiconductor Technology Center Apparatus and method for accessing a magnetoresistive random access memory array
US20060236027A1 (en) * 2005-03-30 2006-10-19 Sandeep Jain Variable memory array self-refresh rates in suspend and standby modes
US7454586B2 (en) * 2005-03-30 2008-11-18 Intel Corporation Memory device commands
JP4883982B2 (ja) * 2005-10-19 2012-02-22 ルネサスエレクトロニクス株式会社 不揮発性記憶装置
CN105006244B (zh) * 2015-05-13 2017-10-10 湖北中部慧易数据科技有限公司 一种信号放大器、磁存储器的读取电路及其操作方法

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4061999A (en) * 1975-12-29 1977-12-06 Mostek Corporation Dynamic random access memory system
US5784327A (en) * 1991-06-12 1998-07-21 Hazani; Emanuel Memory cell array selection circuits
US5477482A (en) 1993-10-01 1995-12-19 The United States Of America As Represented By The Secretary Of The Navy Ultra high density, non-volatile ferromagnetic random access memory
US5640343A (en) 1996-03-18 1997-06-17 International Business Machines Corporation Magnetic memory array using magnetic tunnel junction devices in the memory cells
JP2848325B2 (ja) * 1996-03-28 1999-01-20 日本電気株式会社 半導体記憶装置
US5748519A (en) 1996-12-13 1998-05-05 Motorola, Inc. Method of selecting a memory cell in a magnetic random access memory device
JPH10223991A (ja) 1997-01-31 1998-08-21 Ando Electric Co Ltd 可変波長レーザ光源
US5852574A (en) 1997-12-24 1998-12-22 Motorola, Inc. High density magnetoresistive random access memory device and operating method thereof
US6219273B1 (en) * 1998-03-02 2001-04-17 California Institute Of Technology Integrated semiconductor-magnetic random access memory system
US5986925A (en) 1998-04-07 1999-11-16 Motorola, Inc. Magnetoresistive random access memory device providing simultaneous reading of two cells and operating method
US5946227A (en) * 1998-07-20 1999-08-31 Motorola, Inc. Magnetoresistive random access memory with shared word and digit lines
US6111781A (en) * 1998-08-03 2000-08-29 Motorola, Inc. Magnetic random access memory array divided into a plurality of memory banks
US5969978A (en) 1998-09-30 1999-10-19 The United States Of America As Represented By The Secretary Of The Navy Read/write memory architecture employing closed ring elements
DE19853447A1 (de) * 1998-11-19 2000-05-25 Siemens Ag Magnetischer Speicher
US6055178A (en) 1998-12-18 2000-04-25 Motorola, Inc. Magnetic random access memory with a reference memory array
WO2000042614A1 (de) * 1999-01-13 2000-07-20 Infineon Technologies Ag Schreib-/lesearchitektur für mram
US6134138A (en) 1999-07-30 2000-10-17 Honeywell Inc. Method and apparatus for reading a magnetoresistive memory
US6609174B1 (en) * 1999-10-19 2003-08-19 Motorola, Inc. Embedded MRAMs including dual read ports
US6188615B1 (en) 1999-10-29 2001-02-13 Hewlett-Packard Company MRAM device including digital sense amplifiers
US6128239A (en) 1999-10-29 2000-10-03 Hewlett-Packard MRAM device including analog sense amplifiers
US6473336B2 (en) * 1999-12-16 2002-10-29 Kabushiki Kaisha Toshiba Magnetic memory device
US6185143B1 (en) 2000-02-04 2001-02-06 Hewlett-Packard Company Magnetic random access memory (MRAM) device including differential sense amplifiers
KR100451096B1 (ko) * 2000-09-19 2004-10-02 엔이씨 일렉트로닉스 가부시키가이샤 자기메모리셀어레이를 갖는 비휘발성 반도체메모리장치
JP4667594B2 (ja) * 2000-12-25 2011-04-13 ルネサスエレクトロニクス株式会社 薄膜磁性体記憶装置
JP3812805B2 (ja) * 2001-01-16 2006-08-23 日本電気株式会社 トンネル磁気抵抗素子を利用した半導体記憶装置

Also Published As

Publication number Publication date
TWI222062B (en) 2004-10-11
EP1288959A3 (en) 2003-12-10
JP4067897B2 (ja) 2008-03-26
KR20030011595A (ko) 2003-02-11
US6515896B1 (en) 2003-02-04
US20030021145A1 (en) 2003-01-30
JP2003059258A (ja) 2003-02-28
CN1399276A (zh) 2003-02-26
KR100845524B1 (ko) 2008-07-10
EP1288959A2 (en) 2003-03-05

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Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
ASS Succession or assignment of patent right

Owner name: SAMSUNG ELECTRONICS CO., LTD

Free format text: FORMER OWNER: HEWLETT-PACKARD DEVELOPMENT COMPANY

Effective date: 20071228

C41 Transfer of patent application or patent right or utility model
TR01 Transfer of patent right

Effective date of registration: 20071228

Address after: Gyeonggi Do, South Korea

Patentee after: SAMSUNG ELECTRONICS Co.,Ltd.

Address before: California, USA

Patentee before: Hewlett-Packard Co.

CX01 Expiry of patent term
CX01 Expiry of patent term

Granted publication date: 20051130