TWI222062B - Memory device with short read time - Google Patents
Memory device with short read time Download PDFInfo
- Publication number
- TWI222062B TWI222062B TW091112535A TW91112535A TWI222062B TW I222062 B TWI222062 B TW I222062B TW 091112535 A TW091112535 A TW 091112535A TW 91112535 A TW91112535 A TW 91112535A TW I222062 B TWI222062 B TW I222062B
- Authority
- TW
- Taiwan
- Prior art keywords
- switch
- memory cell
- read
- sense amplifier
- reference potential
- Prior art date
Links
- 238000000034 method Methods 0.000 claims description 13
- 230000005055 memory storage Effects 0.000 claims description 6
- 230000008878 coupling Effects 0.000 claims description 3
- 238000010168 coupling process Methods 0.000 claims description 3
- 238000005859 coupling reaction Methods 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 8
- 230000008859 change Effects 0.000 description 6
- 230000005415 magnetization Effects 0.000 description 6
- 239000013598 vector Substances 0.000 description 6
- 238000003491 array Methods 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000005610 quantum mechanics Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1673—Reading or sensing circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
- G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1653—Address circuits or decoders
- G11C11/1655—Bit-line or column circuits
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Semiconductor Memories (AREA)
- Read Only Memory (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/910,823 US6515896B1 (en) | 2001-07-24 | 2001-07-24 | Memory device with short read time |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TWI222062B true TWI222062B (en) | 2004-10-11 |
Family
ID=25429375
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW091112535A TWI222062B (en) | 2001-07-24 | 2002-06-10 | Memory device with short read time |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US6515896B1 (enExample) |
| EP (1) | EP1288959A3 (enExample) |
| JP (1) | JP4067897B2 (enExample) |
| KR (1) | KR100845524B1 (enExample) |
| CN (1) | CN1229807C (enExample) |
| TW (1) | TWI222062B (enExample) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002170377A (ja) * | 2000-09-22 | 2002-06-14 | Mitsubishi Electric Corp | 薄膜磁性体記憶装置 |
| US6724651B2 (en) * | 2001-04-06 | 2004-04-20 | Canon Kabushiki Kaisha | Nonvolatile solid-state memory and method of driving the same |
| DE10123593C2 (de) * | 2001-05-15 | 2003-03-27 | Infineon Technologies Ag | Magnetische Speicheranordnung |
| US6778431B2 (en) * | 2002-12-13 | 2004-08-17 | International Business Machines Corporation | Architecture for high-speed magnetic memories |
| US6775195B1 (en) | 2003-02-28 | 2004-08-10 | Union Semiconductor Technology Center | Apparatus and method for accessing a magnetoresistive random access memory array |
| US7454586B2 (en) * | 2005-03-30 | 2008-11-18 | Intel Corporation | Memory device commands |
| US20060236027A1 (en) * | 2005-03-30 | 2006-10-19 | Sandeep Jain | Variable memory array self-refresh rates in suspend and standby modes |
| JP4883982B2 (ja) * | 2005-10-19 | 2012-02-22 | ルネサスエレクトロニクス株式会社 | 不揮発性記憶装置 |
| CN105006244B (zh) * | 2015-05-13 | 2017-10-10 | 湖北中部慧易数据科技有限公司 | 一种信号放大器、磁存储器的读取电路及其操作方法 |
Family Cites Families (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4061999A (en) * | 1975-12-29 | 1977-12-06 | Mostek Corporation | Dynamic random access memory system |
| US5784327A (en) * | 1991-06-12 | 1998-07-21 | Hazani; Emanuel | Memory cell array selection circuits |
| US5477482A (en) | 1993-10-01 | 1995-12-19 | The United States Of America As Represented By The Secretary Of The Navy | Ultra high density, non-volatile ferromagnetic random access memory |
| US5640343A (en) | 1996-03-18 | 1997-06-17 | International Business Machines Corporation | Magnetic memory array using magnetic tunnel junction devices in the memory cells |
| JP2848325B2 (ja) * | 1996-03-28 | 1999-01-20 | 日本電気株式会社 | 半導体記憶装置 |
| US5748519A (en) | 1996-12-13 | 1998-05-05 | Motorola, Inc. | Method of selecting a memory cell in a magnetic random access memory device |
| JPH10223991A (ja) | 1997-01-31 | 1998-08-21 | Ando Electric Co Ltd | 可変波長レーザ光源 |
| US5852574A (en) | 1997-12-24 | 1998-12-22 | Motorola, Inc. | High density magnetoresistive random access memory device and operating method thereof |
| US6219273B1 (en) * | 1998-03-02 | 2001-04-17 | California Institute Of Technology | Integrated semiconductor-magnetic random access memory system |
| US5986925A (en) | 1998-04-07 | 1999-11-16 | Motorola, Inc. | Magnetoresistive random access memory device providing simultaneous reading of two cells and operating method |
| US5946227A (en) * | 1998-07-20 | 1999-08-31 | Motorola, Inc. | Magnetoresistive random access memory with shared word and digit lines |
| US6111781A (en) * | 1998-08-03 | 2000-08-29 | Motorola, Inc. | Magnetic random access memory array divided into a plurality of memory banks |
| US5969978A (en) | 1998-09-30 | 1999-10-19 | The United States Of America As Represented By The Secretary Of The Navy | Read/write memory architecture employing closed ring elements |
| DE19853447A1 (de) * | 1998-11-19 | 2000-05-25 | Siemens Ag | Magnetischer Speicher |
| US6055178A (en) | 1998-12-18 | 2000-04-25 | Motorola, Inc. | Magnetic random access memory with a reference memory array |
| JP3773031B2 (ja) * | 1999-01-13 | 2006-05-10 | インフィネオン テクノロジーズ アクチエンゲゼルシャフト | Ｍｒａｍ用の読出／書込構造 |
| US6134138A (en) | 1999-07-30 | 2000-10-17 | Honeywell Inc. | Method and apparatus for reading a magnetoresistive memory |
| US6609174B1 (en) * | 1999-10-19 | 2003-08-19 | Motorola, Inc. | Embedded MRAMs including dual read ports |
| US6128239A (en) | 1999-10-29 | 2000-10-03 | Hewlett-Packard | MRAM device including analog sense amplifiers |
| US6188615B1 (en) | 1999-10-29 | 2001-02-13 | Hewlett-Packard Company | MRAM device including digital sense amplifiers |
| US6473336B2 (en) * | 1999-12-16 | 2002-10-29 | Kabushiki Kaisha Toshiba | Magnetic memory device |
| US6185143B1 (en) | 2000-02-04 | 2001-02-06 | Hewlett-Packard Company | Magnetic random access memory (MRAM) device including differential sense amplifiers |
| KR100451096B1 (ko) * | 2000-09-19 | 2004-10-02 | 엔이씨 일렉트로닉스 가부시키가이샤 | 자기메모리셀어레이를 갖는 비휘발성 반도체메모리장치 |
| JP4667594B2 (ja) * | 2000-12-25 | 2011-04-13 | ルネサスエレクトロニクス株式会社 | 薄膜磁性体記憶装置 |
| JP3812805B2 (ja) * | 2001-01-16 | 2006-08-23 | 日本電気株式会社 | トンネル磁気抵抗素子を利用した半導体記憶装置 |
-
2001
- 2001-07-24 US US09/910,823 patent/US6515896B1/en not_active Expired - Lifetime
-
2002
- 2002-06-10 TW TW091112535A patent/TWI222062B/zh not_active IP Right Cessation
- 2002-07-17 JP JP2002207874A patent/JP4067897B2/ja not_active Expired - Fee Related
- 2002-07-19 EP EP02255074A patent/EP1288959A3/en not_active Withdrawn
- 2002-07-23 KR KR1020020043145A patent/KR100845524B1/ko not_active Expired - Fee Related
- 2002-07-24 CN CNB021269521A patent/CN1229807C/zh not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| EP1288959A2 (en) | 2003-03-05 |
| KR100845524B1 (ko) | 2008-07-10 |
| CN1399276A (zh) | 2003-02-26 |
| JP4067897B2 (ja) | 2008-03-26 |
| CN1229807C (zh) | 2005-11-30 |
| KR20030011595A (ko) | 2003-02-11 |
| US20030021145A1 (en) | 2003-01-30 |
| EP1288959A3 (en) | 2003-12-10 |
| US6515896B1 (en) | 2003-02-04 |
| JP2003059258A (ja) | 2003-02-28 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |