DE69615457T2 - Datenspeicherelement und Datenwiederherstellungsverfahren - Google Patents
Datenspeicherelement und DatenwiederherstellungsverfahrenInfo
- Publication number
- DE69615457T2 DE69615457T2 DE69615457T DE69615457T DE69615457T2 DE 69615457 T2 DE69615457 T2 DE 69615457T2 DE 69615457 T DE69615457 T DE 69615457T DE 69615457 T DE69615457 T DE 69615457T DE 69615457 T2 DE69615457 T2 DE 69615457T2
- Authority
- DE
- Germany
- Prior art keywords
- data
- data storage
- storage element
- voltage
- ferroelectric capacitor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000013500 data storage Methods 0.000 title claims description 24
- 238000000034 method Methods 0.000 title claims description 18
- 238000011084 recovery Methods 0.000 title claims 3
- 239000003990 capacitor Substances 0.000 claims description 87
- 230000010287 polarization Effects 0.000 claims description 30
- 230000005669 field effect Effects 0.000 claims description 6
- 238000000605 extraction Methods 0.000 claims description 5
- 210000004027 cell Anatomy 0.000 description 38
- 230000015556 catabolic process Effects 0.000 description 10
- 238000006731 degradation reaction Methods 0.000 description 10
- 230000005684 electric field Effects 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 230000007704 transition Effects 0.000 description 4
- 230000002457 bidirectional effect Effects 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 238000012856 packing Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 210000000352 storage cell Anatomy 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Dram (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US49036895A | 1995-06-14 | 1995-06-14 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE69615457D1 DE69615457D1 (de) | 2001-10-31 |
| DE69615457T2 true DE69615457T2 (de) | 2002-05-29 |
Family
ID=23947748
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69615457T Expired - Fee Related DE69615457T2 (de) | 1995-06-14 | 1996-06-10 | Datenspeicherelement und Datenwiederherstellungsverfahren |
Country Status (3)
| Country | Link |
|---|---|
| EP (1) | EP0749127B1 (enExample) |
| JP (1) | JPH097378A (enExample) |
| DE (1) | DE69615457T2 (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100224673B1 (ko) * | 1996-12-13 | 1999-10-15 | 윤종용 | 불휘발성 강유전체 메모리장치 및 그의 구동방법 |
| US6097624A (en) * | 1997-09-17 | 2000-08-01 | Samsung Electronics Co., Ltd. | Methods of operating ferroelectric memory devices having reconfigurable bit lines |
| KR100297874B1 (ko) | 1997-09-08 | 2001-10-24 | 윤종용 | 강유전체랜덤액세스메모리장치 |
| JP2000268581A (ja) | 1999-03-17 | 2000-09-29 | Fujitsu Ltd | Ｒｏｍデータを保持する強誘電体メモリ装置 |
| JP4129453B2 (ja) | 2004-12-01 | 2008-08-06 | 株式会社東芝 | 半導体記憶装置、半導体記憶装置の動作方法および半導体記憶装置のテスト方法 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3887924T3 (de) * | 1987-06-02 | 1999-08-12 | National Semiconductor Corp., Santa Clara, Calif. | Nichtflüchtige Speicheranordnung mit einem kapazitiven ferroelektrischen Speicherelement. |
| US5432731A (en) * | 1993-03-08 | 1995-07-11 | Motorola, Inc. | Ferroelectric memory cell and method of sensing and writing the polarization state thereof |
-
1996
- 1996-06-10 DE DE69615457T patent/DE69615457T2/de not_active Expired - Fee Related
- 1996-06-10 EP EP96109241A patent/EP0749127B1/en not_active Expired - Lifetime
- 1996-06-11 JP JP8173018A patent/JPH097378A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| EP0749127B1 (en) | 2001-09-26 |
| EP0749127A3 (en) | 1997-02-12 |
| JPH097378A (ja) | 1997-01-10 |
| DE69615457D1 (de) | 2001-10-31 |
| EP0749127A2 (en) | 1996-12-18 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8328 | Change in the person/name/address of the agent |
Free format text: SCHUMACHER & WILLSAU, PATENTANWALTSSOZIETAET, 80335 MUENCHEN |
|
| 8364 | No opposition during term of opposition | ||
| 8327 | Change in the person/name/address of the patent owner |
Owner name: FREESCALE SEMICONDUCTOR, INC., AUSTIN, TEX., US |
|
| 8339 | Ceased/non-payment of the annual fee |