JPH0967553A - Resin paste for die bonding - Google Patents

Resin paste for die bonding

Info

Publication number
JPH0967553A
JPH0967553A JP7223225A JP22322595A JPH0967553A JP H0967553 A JPH0967553 A JP H0967553A JP 7223225 A JP7223225 A JP 7223225A JP 22322595 A JP22322595 A JP 22322595A JP H0967553 A JPH0967553 A JP H0967553A
Authority
JP
Japan
Prior art keywords
paste
weight
resin
parts
epoxy resin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7223225A
Other languages
Japanese (ja)
Inventor
Yutaka Matsuda
豊 松田
Yuji Sakamoto
有史 坂本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Bakelite Co Ltd
Original Assignee
Sumitomo Bakelite Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Bakelite Co Ltd filed Critical Sumitomo Bakelite Co Ltd
Priority to JP7223225A priority Critical patent/JPH0967553A/en
Publication of JPH0967553A publication Critical patent/JPH0967553A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495Lead-frames or other flat leads
    • H01L23/49503Lead-frames or other flat leads characterised by the die pad
    • H01L23/49513Lead-frames or other flat leads characterised by the die pad having bonding material between chip and die pad
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01004Beryllium [Be]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01005Boron [B]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01006Carbon [C]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01078Platinum [Pt]

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Epoxy Resins (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Die Bonding (AREA)

Abstract

PROBLEM TO BE SOLVED: To obtain a resin paste for die bonding which hardly stains a substrate and is excellent in resistance to soldering crack. SOLUTION: This paste contains as the essential components an arom. diepoxy resin liq. at normal temp. and having a hydrolyzable chlorine content of 500ppm or lower, 4,4'-diamino-3,3'-diethyldiphenylmethane as the curative, 0.01-1wt.% (based on the resin) 1,8-diazabicyclo [5,4,0]undecene-7 and/or its salt, 0.05-5wt.% (based on the paste) superfine-particle silica powder having an average size of primary particles of 2-50nm and having silanol groups existing on the surface, and 10-90wt.% (based on the paste) an inorg. filler.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、IC、LSI等の半導
体素子を基板等に接着する樹脂ペーストに関するもであ
る。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a resin paste for adhering a semiconductor element such as IC or LSI to a substrate or the like.

【0002】[0002]

【従来の技術】近年のエレクトロニクス産業の著しい発
展に伴い、トランジスタ、IC、LSI、超LSIと半
導体素子における回路の集積度は急激に増大している。
このため、半導体素子の大きさも、従来長辺が数mm程
度だったものが10数mmと飛躍的に増大している。ま
た、リードフレームも従来の42アロイから熱伝導性も
良く安価である銅材が主流となりつつある。一方、半導
体製品の実装は表面実装法に、しかも高密度実装化のた
め半導体製品自体の大きさは小さく、かつ薄くなってき
ている。このような半導体製品の動向に従い、半導体製
品の構成材料に対する要求性能も変化してきており、半
導体素子と金属フレームを接合するダイボンディング用
樹脂ペーストに対しても、従来要求されていた接合の信
頼性のみならず、大型チップと銅フレームの熱膨張率の
差に基づく熱応力を吸収緩和する応力緩和特性、更に薄
型パッケージでの表面実装に基づく耐半田クラック特性
が要求され始めている。
2. Description of the Related Art With the remarkable development of the electronics industry in recent years, the degree of integration of circuits in transistors, ICs, LSIs, VLSIs and semiconductor devices has been rapidly increasing.
For this reason, the size of the semiconductor element, which has been conventionally about several mm on the long side, has been dramatically increased to about 10 mm. Further, as the lead frame, a copper material, which has a good thermal conductivity and is inexpensive, is becoming the mainstream from the conventional 42 alloy. On the other hand, the mounting of semiconductor products is performed by the surface mounting method, and the size of the semiconductor products themselves is becoming smaller and thinner due to higher density mounting. In accordance with such trends in semiconductor products, the performance requirements for the constituent materials of semiconductor products are also changing, and the reliability of bonding that has been conventionally required for die-bonding resin paste that bonds semiconductor elements and metal frames In addition, stress relaxation characteristics for absorbing and relaxing thermal stress due to the difference in thermal expansion coefficient between a large chip and a copper frame, and solder crack resistance characteristics due to surface mounting in a thin package are beginning to be required.

【0003】この様は半田クラック性に耐えるためのダ
イボンディング用樹脂ペーストの条件としては、低応力
性、低吸水性、低汚染性の様な項目があげられる。これ
らの項目のうち、低応力性、低吸水性に関しては樹脂、
硬化剤、添加剤等広汎にわたる研究開発がなされており
実用化されている。一方、汚染性に関しては、一般にダ
イボンディング用樹脂ペーストは、樹脂とフィラーから
構成されているが、塗布作業性を考慮するためにペース
トの粒度が限定される。樹脂は粘稠な液体、又は固形で
あり、ペースト化するために希釈剤を加え低粘度化する
必要がある。その希釈剤の例としては、モノエポキシ、
脂肪族ポリエポキシ等の反応性希釈剤、溶剤で代表され
る非反応性希釈剤がある。前者の場合においては、ペー
ストの硬化中にアウトガスとして一部が揮散し、基板、
チップ表面等を汚染し易く、更に封止樹脂で封止したと
きの封止樹脂と基板やチップ表面との密着性が悪くな
り、封止樹脂やペーストに採用されている低応力性が生
かされなくなり、ストレスがかかった時の界面剥離やパ
ッケージクラックがおきやすくなるという欠点があっ
た。また、半田クラック性とは関係ないが反応性希釈剤
は、揮発し易く一般に作業環境に難点がある。このため
硬化時には排気を十分にしなければならない等の環境面
で好ましくない。一方、溶剤等の非反応性希釈剤を用い
る場合は、基板、チップへの汚染は殆どないがペースト
層にボイドが発生し易い、ペースト厚みが一定しない等
の問題があった。従って希釈剤を用いず、かつ半田クラ
ック性に優れたペーストの開発が望まれていた。対策と
して、液状エポキシ樹脂、液状の硬化剤及びフィラーの
組み合わせがあるが、一般にポットライフ(常温で2日
以上粘度変化ないこと)が短く実際の作業に適用するの
は困難であった。
As conditions for the die-bonding resin paste to withstand solder cracking, there are items such as low stress, low water absorption, and low contamination. Of these items, low stress, low water absorption resin,
Extensive research and development on curing agents, additives, etc. have been made and put to practical use. On the other hand, regarding the stain resistance, the resin paste for die bonding is generally composed of a resin and a filler, but the particle size of the paste is limited in consideration of coating workability. The resin is a viscous liquid or solid, and it is necessary to add a diluent to reduce the viscosity to form a paste. Examples of the diluent include monoepoxy,
There are reactive diluents such as aliphatic polyepoxy and non-reactive diluents represented by solvents. In the former case, part of the gas is volatilized as outgas during curing of the paste,
The chip surface is easily contaminated, and the adhesion between the encapsulation resin and the substrate or chip surface when encapsulating with the encapsulation resin deteriorates, making use of the low stress property used in the encapsulation resin and paste. However, there is a drawback that interface peeling and package cracks easily occur when stress is applied. Although not related to solder cracking property, the reactive diluent is liable to volatilize and generally has a problem in working environment. For this reason, it is not preferable from an environmental point of view that exhaust must be sufficient during curing. On the other hand, when a non-reactive diluent such as a solvent is used, there are problems that the substrate and the chip are hardly contaminated, but voids are easily generated in the paste layer and the paste thickness is not constant. Therefore, it has been desired to develop a paste that does not use a diluent and has excellent solder cracking properties. As a countermeasure, there is a combination of a liquid epoxy resin, a liquid curing agent and a filler, but generally the pot life (the viscosity does not change at room temperature for 2 days or more) is short and it is difficult to apply it to actual work.

【0004】[0004]

【発明が解決しようとする課題】本発明は、低汚染性、
耐半田クラック性に優れたダイボンディング用樹脂ペー
ストを提供するものである。
SUMMARY OF THE INVENTION The present invention has a low pollution property,
It is intended to provide a resin paste for die bonding which is excellent in solder crack resistance.

【0005】[0005]

【課題を解決するための手段】即ち本発明は、(A)加
水分解塩素量500ppm以下で、常温で液状の2官能
の芳香族エポキシ樹脂、(B)硬化剤として4,4′−
ジアミノ−3,3′−ジエチルジフェニルメタン、
(C)1,8−ジアザビシクロ〔5,4,0〕ウンデセ
ン−7及び/又はその塩、(D)一次粒子の平均粒径が
2〜50nmでかつ表面にシラノール基が存在する超微
粒子シリカ粉末、及び(E)無機フィラーを必須成分と
し、(A)が100重量部に対し(C)を0.01〜1
重量部、全ペースト中に(D)を0.05〜5重量%、
(E)を10〜90重量%含むダイボンディング用樹脂
ペーストである。
That is, according to the present invention, (A) a bifunctional aromatic epoxy resin which is liquid at room temperature and has a hydrolyzable chlorine content of 500 ppm or less, and (B) a curing agent of 4,4'-
Diamino-3,3'-diethyldiphenylmethane,
(C) 1,8-diazabicyclo [5,4,0] undecene-7 and / or a salt thereof, (D) ultrafine silica powder having an average primary particle size of 2 to 50 nm and having silanol groups on the surface , And (E) an inorganic filler as an essential component, and (C) is 0.01 to 1 with respect to 100 parts by weight of (A).
Parts by weight, 0.05 to 5% by weight of (D) in the total paste,
A resin paste for die bonding containing 10 to 90% by weight of (E).

【0006】本発明に用いる2官能の芳香族エポキシ樹
脂は、常温で液状のものであるのに限定される。また、
エポキシ樹脂に含まれる加水分解性塩素量を500pp
m以下に限定しているが、このようなエポキシ樹脂を用
いることによりダイボンディング用樹脂ペーストから抽
出される塩素の量を大巾に低減することができる。抽出
された塩素は、半導体素子表面のアミル配線腐食を引き
起こす原因となるため、抽出量が少なければそれだけ信
頼性が高くなる。加水分解性塩素含有量の測定は、エポ
キシ樹脂0.5gをジオキサン30mlに完全に溶解さ
せ、これにIN−KOH液(エタノール溶液)5mlを
加え30分間煮沸還流する。これに80%アセトン水を
100ml加え、更に濃HNO32mlを加え、0.0
1N−AgNO3水溶液で電位差滴定を行う。
The bifunctional aromatic epoxy resin used in the present invention is limited to being liquid at room temperature. Also,
The amount of hydrolyzable chlorine contained in the epoxy resin is 500pp
Although limited to m or less, the amount of chlorine extracted from the die bonding resin paste can be greatly reduced by using such an epoxy resin. The extracted chlorine causes the corrosion of the Amyl wiring on the surface of the semiconductor element, and the smaller the amount of extracted chlorine, the higher the reliability. To measure the content of hydrolyzable chlorine, 0.5 g of an epoxy resin is completely dissolved in 30 ml of dioxane, 5 ml of an IN-KOH solution (ethanol solution) is added, and the mixture is boiled under reflux for 30 minutes. To this, 100 ml of 80% acetone water was added, and further 2 ml of concentrated HNO 3 was added, and
Potentiometric titration is performed with a 1N-AgNO 3 aqueous solution.

【0007】エポキシ樹脂の粘度は、ペースト粘度を下
げるために極力粘度が低いものが好ましい。特に600
0CPS(E型粘度測定)以下の樹脂が好ましい。例え
ば、ビスA型、ビスF型エポキシ樹脂等の低分子量タイ
プが挙げられる。次に硬化剤としての芳香族アミンであ
る4,4′−ジアミノ−3,3′−ジエチルジフェニル
メタンの添加量は、エポキシ樹脂の当量に対し0.9〜
1.1であることが好ましい。0.9未満だと硬化性に
劣り、1.1を越えるとポットライフに影響を及ぼす。
次に、1,8−ジアザビシクロ〔5,4,0〕ウンデセ
ン−7(以下、DBUという)及び/又はその塩は、特
に常温でエポキシ樹脂と芳香族アミンの反応性を遅延さ
せる効果があることを見い出した。その塩の例として
は、DBUのフェノール塩、有機酸塩等がある。DBU
の添加量は、エポキシ樹脂100重量部に対し0.01
〜1重量部が好ましい。0.01重量部未満だと遅延さ
せる効果が少なく、1重量部を越えると硬化後の基材と
の密着性が損なわれる。更に反応遅延剤として、シラノ
ール基を含む一次粒子の平均粒径が2〜50nmの超微
粒子シリカ粉末をDBU及び/又はその塩と併用する
と、更に粘度上昇の抑制に効果があることがわかった。
これを添加することによりシラノール基とアミノ基が相
互作用するために、エポキシ基との反応が遅延されるも
のと考えられる。なおこの作用は、硬化温度においては
反応性に全く影響を及ぼさない。超微粒子シリカ粉末の
添加量は、全ペースト中に0.05〜5重量%であるこ
とが好ましい。0.1重量%未満だと、エポキシ樹脂と
アミンの反応の遅延性が少なくポットライフが短くな
る。5重量%を越えるとペースト粘度が高すぎ実用的で
ない。
The viscosity of the epoxy resin is preferably as low as possible in order to reduce the paste viscosity. Especially 600
Resins of 0 CPS (E-type viscosity measurement) or less are preferable. Examples thereof include low molecular weight types such as bis A type and bis F type epoxy resins. Next, the addition amount of aromatic amine 4,4'-diamino-3,3'-diethyldiphenylmethane as a curing agent is 0.9 to the equivalent of the epoxy resin.
It is preferably 1.1. If it is less than 0.9, the curability is poor, and if it exceeds 1.1, the pot life is affected.
Next, 1,8-diazabicyclo [5,4,0] undecene-7 (hereinafter referred to as DBU) and / or its salt has an effect of delaying the reactivity of the epoxy resin and the aromatic amine, particularly at room temperature. Found out. Examples of the salt include DBU phenol salt and organic acid salt. DBU
The amount added is 0.01 per 100 parts by weight of the epoxy resin.
-1 part by weight is preferred. If it is less than 0.01 part by weight, the effect of delaying is small, and if it exceeds 1 part by weight, the adhesion to the substrate after curing is impaired. Further, it has been found that the combined use of ultrafine silica powder having a silanol group-containing primary particle having an average particle diameter of 2 to 50 nm as a reaction retarder in combination with DBU and / or a salt thereof is effective in suppressing an increase in viscosity.
It is considered that the addition of this compound delays the reaction with the epoxy group because the silanol group and the amino group interact with each other. This effect does not affect the reactivity at the curing temperature. The amount of the ultrafine silica powder added is preferably 0.05 to 5% by weight based on the total paste. If it is less than 0.1% by weight, the delay of the reaction between the epoxy resin and the amine is small and the pot life becomes short. If it exceeds 5% by weight, the paste viscosity is too high to be practical.

【0008】次に無機フィラーに関しては、特に限定さ
れないが、例えば以下の様なものがある。硬化後のペー
ストに導電性が必要な場合は、Au、Ag、Cu、Ni
等の金属粉、カーボン、グラファイト等がある。次に硬
化後のペーストに絶縁性が必要な場合は、SiO2、A
23等の酸化物、AlN、BN等の金属窒化物、Si
C等の金属炭化物、CaCO3の様な金属炭酸塩等があ
る。無機フィラーの添加量は、導電性ペーストの場合、
全ペースト中に70〜90重量%であることが好まし
く、70重量%未満だと導電性が発現しにくく、90重
量%を越えるとペーストの粘度が高くなり塗布作業上好
ましくない。又、絶縁性ペーストの場合は、全ペースト
中に10〜90重量%であることが好ましい。10重量
%未満だと接着力不足になり、90重量%を越えるとペ
ーストの粘度が高すぎ実用に適しない。本発明において
は、必要に応じ可撓性付与剤、消泡剤、カップリング剤
等を用いることもできる。本発明の製造方法の例として
は、各成分を予備混合した後、3本ロールを用いて混練
し、混練後真空脱泡し樹脂ペーストを得る。以下実施例
を用いて本発明を具体的に説明する。なお配合割合は重
量部である。
Next, the inorganic filler is not particularly limited, but examples thereof include the following. If the paste after curing needs conductivity, Au, Ag, Cu, Ni
Etc., such as metal powder, carbon, graphite, etc. Next, when the paste after curing requires insulation, SiO 2 , A
oxides such as l 2 O 3 ; metal nitrides such as AlN and BN; Si
There are metal carbides such as C and metal carbonates such as CaCO 3 . In the case of conductive paste, the amount of inorganic filler added is
It is preferably from 70 to 90% by weight in the total paste, and when it is less than 70% by weight, the conductivity is difficult to develop, and when it exceeds 90% by weight, the viscosity of the paste becomes high, which is not preferable in coating work. Further, in the case of an insulating paste, it is preferably 10 to 90% by weight in the total paste. If it is less than 10% by weight, the adhesive strength will be insufficient, and if it exceeds 90% by weight, the viscosity of the paste will be too high to be suitable for practical use. In the present invention, a flexibility imparting agent, a defoaming agent, a coupling agent and the like can be used if necessary. As an example of the production method of the present invention, after premixing the components, kneading is performed using a three-roll mill, and after kneading, vacuum defoaming is performed to obtain a resin paste. Hereinafter, the present invention will be described specifically with reference to Examples. The mixing ratio is part by weight.

【0009】以下本発明を実施例で具体的に説明する。
配合割合は重量部である。 実施例1〜3 ビスフェノールFとエピクロルヒドリンとの反応により
得られるグリシジルエーテル(加水分解塩素量150p
pm、エポキシ当量165、粘度3,000cps)
(A成分)、4,4′−ジアミノ−3,3′−ジエチル
ジフェニルメタン(B成分)、1,8−ジアザビシクロ
〔5,4,0〕ウンデセン−7のフェノール塩(C成
分)、一次粒子12μmの超微細シリカ粉末(D成
分)、平均粒径3μmのフレーク状銀粉(E成分)、γ
−グリシドオキシプロピルトリメトキシシラン(F成
分)を表1に示す割合で配合し、3本ロールで十分混練
し脱泡後導電性ペーストを得、各種性能を評価した。
The present invention will be specifically described below with reference to examples.
The mixing ratio is part by weight. Examples 1 to 3 Glycidyl ether obtained by reaction of bisphenol F and epichlorohydrin (hydrolyzed chlorine amount 150 p
pm, epoxy equivalent 165, viscosity 3,000 cps)
(Component A), 4,4′-diamino-3,3′-diethyldiphenylmethane (Component B), phenol salt of 1,8-diazabicyclo [5,4,0] undecene-7 (Component C), primary particles 12 μm Ultrafine silica powder (D component), flake silver powder with an average particle size of 3 μm (E component), γ
-Glycidoxypropyltrimethoxysilane (F component) was blended in a ratio shown in Table 1, and sufficiently kneaded with a three-roll to defoam to obtain a conductive paste, and various performances were evaluated.

【0010】評価方法 粘 度 :25℃にてE型粘度計を用いて回転数
2.5rpmでの粘度を測定した。 体積抵抗率:スライドガラス上にペーストを幅4mm、
厚さ30μmに塗布し、160℃のオーブン中で120
分間硬化した後硬化物の体積抵抗率を測定した。 接着強度 :ペーストを用いて、2×2mmのシリコン
チップを銅フレームにマウントし、160℃のオーブン
中で120分間硬化した。硬化後プッシュプルゲージを
用い250℃での熱時ダイシェア強度を測定した。また
硬化後のサンプルを85℃、相対湿度85%、72時間
吸水処理し240℃での熱時ダイシェア強度を測定し
た。 吸水率 :テフロンシート上にペーストを50×50
×0.1mmになるように塗布し200℃のオーブン中
で60分間硬化した後、85℃、相対湿度85%、72
時間吸水処理を行い、処理前後の重量変化より吸水率を
算出した。 ボイド :リードフレームに10mm×10mmのガ
ラスチップをマウントし硬化後、外観でボイドをチェッ
クした。被着面積の15%以下のボイドを良好、15%
を越えるものを不良とした。 耐パッケージクラック性:シリカフィラーを約78%含
有するビフェノール型エポキシ樹脂/フェノールノボラ
ック樹脂系の封止材料を用い、下記の条件で成形したパ
ッケージを85℃、相対湿度85%、168時間吸水処
理した後、IRリフロー(240℃、10秒)にかけ、
断面観察により内部クラックの数を測定し耐パッケージ
クラック性の指標とした。 パッケージ :80pQFP(14×20×2mm厚さ) チップサイズ :7.5×7.5mm(アルミ配線のみ) リードフレーム :42アロイ 成 形 :175℃、2分 ポストモールドキュア :175℃、4時間 n数 :12 ポットライフ:ペーストを25℃に保管し、48時間後
の粘度を測定し、初期値に対し20%以内の増加のもの
を良好、20%を越えたものを不良とした。
Evaluation method Viscosity: The viscosity was measured at a rotation speed of 2.5 rpm using an E-type viscometer at 25 ° C. Volume resistivity: paste 4 mm wide on glass slide,
Apply to a thickness of 30 μm, and place in an oven at 160 ° C. for 120
After curing for one minute, the volume resistivity of the cured product was measured. Adhesive strength: Using a paste, a 2 × 2 mm silicon chip was mounted on a copper frame and cured in an oven at 160 ° C. for 120 minutes. After curing, the die shear strength during heating at 250 ° C. was measured using a push-pull gauge. Further, the cured sample was subjected to a water absorption treatment at 85 ° C. and a relative humidity of 85% for 72 hours, and the die shear strength under heat at 240 ° C. was measured. Water absorption rate: 50 × 50 paste on Teflon sheet
After coating so as to have a thickness of 0.1 mm and curing in an oven at 200 ° C. for 60 minutes, 85 ° C., relative humidity 85%, 72
The water absorption treatment was performed for a period of time, and the water absorption rate was calculated from the weight change before and after the treatment. Void: A 10 mm × 10 mm glass chip was mounted on a lead frame, and after curing, a void was checked by appearance. Good voids of 15% or less of the adhered area, 15%
Anything over 100 was regarded as defective. Package crack resistance: A package molded under the following conditions using a biphenol type epoxy resin / phenol novolac resin-based encapsulating material containing about 78% silica filler was subjected to water absorption treatment at 85 ° C. and 85% relative humidity for 168 hours. After that, IR reflow (240 ℃, 10 seconds),
The number of internal cracks was measured by observing the cross section and used as an index of package crack resistance. Package: 80 pQFP (14 x 20 x 2 mm thickness) Chip size: 7.5 x 7.5 mm (Aluminum wiring only) Lead frame: 42 alloy Form: 175 ° C, 2 minutes Post mold cure: 175 ° C, 4 hours n Number: 12 Pot life: The paste was stored at 25 ° C., the viscosity after 48 hours was measured, and those with an increase of 20% or less of the initial value were evaluated as good, and those exceeding 20% were evaluated as poor.

【0011】実施例4 銀粉の代りに、平均粒径1μmの球状シリカフィラー
(G成分)とした以外は表1に示した配合で絶縁性ペー
ストを得た。 比較例1〜6 表2に示した配合でペーストを調製し、実施例と同様に
して各種性能を評価した。評価結果を表2に示す。 比較例7 エポキシ樹脂(実施例のA成分) 10.7重量部 反応性希釈(t−ブチルフェニルグリシジルエーテル) 7.2重量部 フェノールノボラック樹脂 1.8重量部 ジシアンジアミド 0.2重量部 DBUのフェノール塩(実施例のC成分) 0.1重量部 実施例の銀粉 80重量部 を実施例と同様に混練しペーストを得た。実施例と同様
にして各種性能を評価した。評価結果を表2に示す。 比較例8 エポキシ樹脂(実施例のA成分) 10.7重量部 ブチルセロソルブアセテート(溶媒) 7.2重量部 フェノールノボラック樹脂 1.8重量部 ジシアンジアミド 0.2重量部 DBUのフェノール塩(実施例のC成分) 0.1重量部 実施例の銀粉 80重量部 を実施例と同様に混練しペーストを得た。実施例と同様
にして各種性能を評価した。評価結果を表2に示す。
Example 4 An insulating paste was obtained with the composition shown in Table 1 except that spherical silica filler (G component) having an average particle size of 1 μm was used instead of silver powder. Comparative Examples 1 to 6 Pastes were prepared according to the formulations shown in Table 2, and various performances were evaluated in the same manner as in Examples. Table 2 shows the evaluation results. Comparative Example 7 Epoxy resin (A component of Example) 10.7 parts by weight Reactive dilution (t-butylphenyl glycidyl ether) 7.2 parts by weight Phenol novolac resin 1.8 parts by weight Dicyandiamide 0.2 parts by weight DBU phenol 0.1 parts by weight of salt (component C in the example) 80 parts by weight of silver powder in the example were kneaded in the same manner as in the example to obtain a paste. Various performances were evaluated in the same manner as in the example. Table 2 shows the evaluation results. Comparative Example 8 Epoxy Resin (Component A of Example) 10.7 parts by weight Butyl cellosolve acetate (solvent) 7.2 parts by weight Phenol novolac resin 1.8 parts by weight Dicyandiamide 0.2 parts by weight Phenol salt of DBU (C of Example) Component) 0.1 parts by weight 80 parts by weight of the silver powder of the example was kneaded in the same manner as in the example to obtain a paste. Various performances were evaluated in the same manner as in the example. Table 2 shows the evaluation results.

【0012】[0012]

【表1】 [Table 1]

【0013】[0013]

【表2】 [Table 2]

【0014】[0014]

【発明の効果】本発明のペーストは、保存安定性に優
れ、反応性希釈剤及び/又は非反応性希釈剤を含まない
ため、硬化時のアウトガスによる基材への汚染が全くな
く、かつ硬化物層にボイドがなくなり、耐半田クラック
性にも優れる。
EFFECTS OF THE INVENTION The paste of the present invention has excellent storage stability and does not contain a reactive diluent and / or a non-reactive diluent. No voids in the material layer, and excellent solder crack resistance.

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 (A)加水分解塩素量500ppm以下
で、常温で液状の2官能の芳香族エポキシ樹脂、(B)
硬化剤として4,4′−ジアミノ−3,3′−ジエチル
ジフェニルメタン、(C)1,8−ジアザビシクロ
〔5,4,0〕ウンデセン−7及び/又はその塩、
(D)一次粒子の平均粒径が2〜50nmでかつ表面に
シラノール基が存在する超微粒子シリカ粉末、及び
(E)無機フィラーを必須成分とし、(A)が100重
量部に対し(C)を0.01〜1重量部、全ペースト中
に(D)を0.05〜5重量%、(E)を10〜90重
量%含むことを特徴とするダイボンディング用樹脂ペー
スト。
1. A bifunctional aromatic epoxy resin (A) which is liquid at room temperature and has a hydrolyzable chlorine content of 500 ppm or less, and (B).
4,4'-diamino-3,3'-diethyldiphenylmethane as a curing agent, (C) 1,8-diazabicyclo [5,4,0] undecene-7 and / or a salt thereof,
(D) An ultrafine silica powder having an average particle size of primary particles of 2 to 50 nm and having silanol groups on the surface, and (E) an inorganic filler as essential components, and (A) is 100 parts by weight (C). 0.01 to 1 part by weight, 0.05 to 5% by weight of (D) and 10 to 90% by weight of (E) in the total paste.
JP7223225A 1995-08-31 1995-08-31 Resin paste for die bonding Pending JPH0967553A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7223225A JPH0967553A (en) 1995-08-31 1995-08-31 Resin paste for die bonding

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7223225A JPH0967553A (en) 1995-08-31 1995-08-31 Resin paste for die bonding

Publications (1)

Publication Number Publication Date
JPH0967553A true JPH0967553A (en) 1997-03-11

Family

ID=16794761

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7223225A Pending JPH0967553A (en) 1995-08-31 1995-08-31 Resin paste for die bonding

Country Status (1)

Country Link
JP (1) JPH0967553A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1192740A (en) * 1997-09-24 1999-04-06 Hitachi Chem Co Ltd Resin paste composition and semiconductor device
WO1999033106A1 (en) * 1997-12-19 1999-07-01 Infineon Technologies Ag Plastic composite body
JP2000265144A (en) * 1999-03-16 2000-09-26 Sumitomo Bakelite Co Ltd Die attach paste
US6632881B1 (en) * 1999-04-13 2003-10-14 Hitachi Chemical Co., Ltd. Encapsulant of epoxy resin and liquid aromatic amine curing agent
JP2005235915A (en) * 2004-02-18 2005-09-02 Sumitomo Bakelite Co Ltd Adhesive film for semiconductor and semiconductor device
JP2007146171A (en) * 2007-01-05 2007-06-14 Nippon Kayaku Co Ltd Epoxy resin composition for die bonding paste
WO2014050156A1 (en) * 2012-09-27 2014-04-03 三ツ星ベルト株式会社 Conductive composition and conductive molded body using same

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6452768A (en) * 1987-05-29 1989-02-28 Mitsui Petrochemical Ind Epoxy compound and epoxy polymer composition containing said compound as essential component
JPH021789A (en) * 1988-02-24 1990-01-08 Matsushita Electric Works Ltd Epoxy resin adhesive and electrical circuit board
JPH04292616A (en) * 1991-03-20 1992-10-16 Kanegafuchi Chem Ind Co Ltd Curable resin composition
JPH0669257A (en) * 1992-08-21 1994-03-11 Hitachi Chem Co Ltd Adhesive for semiconductor element and semiconductor device
JPH073123A (en) * 1993-04-23 1995-01-06 Mitsui Petrochem Ind Ltd Epoxy resin composition

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6452768A (en) * 1987-05-29 1989-02-28 Mitsui Petrochemical Ind Epoxy compound and epoxy polymer composition containing said compound as essential component
JPH021789A (en) * 1988-02-24 1990-01-08 Matsushita Electric Works Ltd Epoxy resin adhesive and electrical circuit board
JPH04292616A (en) * 1991-03-20 1992-10-16 Kanegafuchi Chem Ind Co Ltd Curable resin composition
JPH0669257A (en) * 1992-08-21 1994-03-11 Hitachi Chem Co Ltd Adhesive for semiconductor element and semiconductor device
JPH073123A (en) * 1993-04-23 1995-01-06 Mitsui Petrochem Ind Ltd Epoxy resin composition

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1192740A (en) * 1997-09-24 1999-04-06 Hitachi Chem Co Ltd Resin paste composition and semiconductor device
WO1999033106A1 (en) * 1997-12-19 1999-07-01 Infineon Technologies Ag Plastic composite body
JP2001527131A (en) * 1997-12-19 2001-12-25 インフィネオン テクノロジース アクチエンゲゼルシャフト Plastic composite
JP2000265144A (en) * 1999-03-16 2000-09-26 Sumitomo Bakelite Co Ltd Die attach paste
US6632881B1 (en) * 1999-04-13 2003-10-14 Hitachi Chemical Co., Ltd. Encapsulant of epoxy resin and liquid aromatic amine curing agent
JP2005235915A (en) * 2004-02-18 2005-09-02 Sumitomo Bakelite Co Ltd Adhesive film for semiconductor and semiconductor device
JP2007146171A (en) * 2007-01-05 2007-06-14 Nippon Kayaku Co Ltd Epoxy resin composition for die bonding paste
WO2014050156A1 (en) * 2012-09-27 2014-04-03 三ツ星ベルト株式会社 Conductive composition and conductive molded body using same
JP2014080559A (en) * 2012-09-27 2014-05-08 Mitsuboshi Belting Ltd Conductive composition

Similar Documents

Publication Publication Date Title
JP3189988B2 (en) Insulating resin paste
JPH0967553A (en) Resin paste for die bonding
JP2001106767A (en) Resin paste for semiconductor and semiconductor device using the same
JP2007142117A (en) Die-bonding paste and semiconductor device using same
JPH0726235A (en) Conductive paste
JPH107763A (en) Conductive resin paste
JPH10237157A (en) Liquid resin composition, and semiconductor apparatus made by using the same
JP3578592B2 (en) Die attach resin paste for semiconductor
JPH07179833A (en) Conductive resin paste
JPH04223007A (en) Conductive resin paste for semiconductor
JPH1161086A (en) Die-attach resin paste for semiconductor
JP2641349B2 (en) Insulating resin paste
JPH04303937A (en) Conductive resin paste for semiconductor
JP2596663B2 (en) Conductive resin paste for semiconductors
JP2002187938A (en) Die attachment paste and semiconductor device
JP2501258B2 (en) Insulating resin paste
JPH03145143A (en) Conductive resin paste for semiconductor
JPH10237156A (en) Die-attach resin paste for semiconductor
JP3608908B2 (en) Resin paste for semiconductor
JP2001055482A (en) Resin paste for semiconductor and semiconductor device using the same
JP2002080562A (en) Liquid epoxy resin composition and semiconductor device
JP3847032B2 (en) Liquid encapsulating resin composition and semiconductor device using the same
JP2798565B2 (en) Conductive resin paste for semiconductors
JPH1149841A (en) Resin paste for semiconductor
JP2000173344A (en) Conductive paste

Legal Events

Date Code Title Description
A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20040116