JPH1161086A - Die-attach resin paste for semiconductor - Google Patents

Die-attach resin paste for semiconductor

Info

Publication number
JPH1161086A
JPH1161086A JP9222216A JP22221697A JPH1161086A JP H1161086 A JPH1161086 A JP H1161086A JP 9222216 A JP9222216 A JP 9222216A JP 22221697 A JP22221697 A JP 22221697A JP H1161086 A JPH1161086 A JP H1161086A
Authority
JP
Japan
Prior art keywords
resin
meth
weight
paste
pts
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9222216A
Other languages
Japanese (ja)
Inventor
Toshiro Takeda
敏郎 竹田
Tomohiro Kagimoto
奉広 鍵本
Ryuichi Murayama
竜一 村山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Bakelite Co Ltd
Original Assignee
Sumitomo Bakelite Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Bakelite Co Ltd filed Critical Sumitomo Bakelite Co Ltd
Priority to JP9222216A priority Critical patent/JPH1161086A/en
Publication of JPH1161086A publication Critical patent/JPH1161086A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/102Material of the semiconductor or solid state bodies
    • H01L2924/1025Semiconducting materials
    • H01L2924/10251Elemental semiconductors, i.e. Group IV
    • H01L2924/10253Silicon [Si]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/35Mechanical effects
    • H01L2924/351Thermal stress

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Macromonomer-Based Addition Polymer (AREA)
  • Die Bonding (AREA)

Abstract

PROBLEM TO BE SOLVED: To obtain a die-attach resin paste improved in resistances to staining and soldering cracks by compounding a specific urethane (meth)acrylate resin with a specific (meth)acrylic resin, an org. peroxide and an inorg. filler. SOLUTION: 100 pts.wt. urethane (meth)acrylate resin represented by formula I or II (wherein R1 is H or CH3 ; and m and n are each an integer) and obtd. by reacting polypropylene glycol with isophorone diisocyanate and then with hydroxyethyl (meth)acrylate is compounded with 50-200 pts.wt. (meth)acrylic resin represented by formula III (R2 is H or CH3 ; and k is 10 or lower), 0.1-50 pts.wt. org. peroxide, 50-1,200 pts.wt. inorg. filler and required amts. of additives such as an antifoaming agent, a coupling agent and a surfactant. Thus is obtd. a die-attach resin paste for semiconductors which hardly causes staining of a substrate due to outgassing during curing and which forms a void-free cured layer.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、IC、LSI等の
半導体素子を基板等に接着する樹脂ペーストに関するも
のである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a resin paste for bonding a semiconductor element such as an IC or an LSI to a substrate or the like.

【0002】[0002]

【従来の技術】近年のエレクトロニクス産業の著しい発
展に伴い、トランジスタ、IC、LSI、超LSIと半
導体素子における回路の集積度は急激に増大している。
このため、半導体素子の大きさも、従来長辺が数mm程
度だったものが10数mmと飛躍的に増大している。
又、リードフレームは従来の42アロイから、熱伝導性
も良く安価である銅材が主流となりつつある。一方、半
導体製品の実装は表面実装法になり、しかも高密度実装
化のため半導体製品自体、すなわちパッケージの大きさ
は小さく、且つ薄くなってきている。
2. Description of the Related Art With the remarkable development of the electronics industry in recent years, the degree of integration of circuits in transistors, ICs, LSIs, VLSIs and semiconductor devices has been rapidly increasing.
For this reason, the size of the semiconductor element has been dramatically increased to about several tens mm, whereas the long side in the related art was about several mm.
In addition, the lead frame is mainly made of inexpensive copper material having good thermal conductivity from the conventional 42 alloy. On the other hand, the mounting of semiconductor products has become a surface mounting method, and the size of the semiconductor products themselves, that is, packages, has become smaller and thinner for high-density mounting.

【0003】このような半導体製品の動向に従い、半導
体製品の構成材料に対する要求性能も変化してきてお
り、半導体素子と金属フレームを接合するダイボンディ
ング用樹脂ペーストに対しても、従来要求されていた接
合の信頼性のみならず、大型チップと銅フレームの熱膨
張率の差に基づく熱応力を吸収緩和する応力緩和特性、
更に薄型パッケージでの表面実装に基づく耐半田クラッ
ク特性が要求され始めている。
[0003] In accordance with the trend of such semiconductor products, the required performance of constituent materials of the semiconductor products has changed, and the bonding paste that has been conventionally required for the die bonding resin paste for bonding the semiconductor element and the metal frame has been changed. Not only reliability, but also stress relaxation characteristics to absorb and relax thermal stress based on the difference in thermal expansion coefficient between large chip and copper frame,
Further, solder crack resistance based on surface mounting in a thin package has been demanded.

【0004】この様な耐半田クラック性のダイボンディ
ング用樹脂ペーストの条件としては、低応力性、低吸水
性、低汚染性などの項目があげられる。これらの項目の
うち、低応力性、低吸水性に関しては樹脂、硬化剤、添
加剤等広汎にわたる研究開発がなされており実用化され
ている。一方、汚染性に関しては、一般にダイボンディ
ング用樹脂ペーストは、樹脂と無機充填材から構成され
ているが、塗布作業性を考慮するためにペーストの粘度
が限定される。
[0004] Conditions for such a solder crack-resistant resin paste for die bonding include items such as low stress, low water absorption and low contamination. Among these items, extensive research and development on low stress properties and low water absorption, such as resins, curing agents, and additives, have been made and put to practical use. On the other hand, regarding the contamination, the resin paste for die bonding is generally composed of a resin and an inorganic filler, but the viscosity of the paste is limited in consideration of the coating workability.

【0005】従来のエポキシ樹脂を使用する場合は、樹
脂は元来粘稠な液体、又は固形であるため、ペースト化
するには希釈剤を加え低粘度化する必要がある。その希
釈剤としては、例えば、モノエポキシ、脂肪族ポリエポ
キシ等の反応性希釈剤、又は溶剤で代表される非反応性
希釈剤がある。
When a conventional epoxy resin is used, since the resin is originally a viscous liquid or solid, it is necessary to lower the viscosity by adding a diluent to form a paste. Examples of the diluent include a reactive diluent such as monoepoxy and aliphatic polyepoxy, and a non-reactive diluent represented by a solvent.

【0006】反応性希釈剤の場合においては、ペースト
の硬化中にアウトガスとして一部が揮散し、基板、チッ
プ表面等を汚染し易く、更に封止樹脂組成物で封止した
ときの封止樹脂と基板やチップ表面との密着性が悪くな
り、封止樹脂組成物やペーストに採用されている低応力
性が生かされず、ストレスがかかった時の界面剥離やパ
ッケージクラックが起きやすくなるという欠点があっ
た。又、半田クラック性とは関係ないが、反応性希釈剤
は、揮発し易く一般に作業環境に難点がある。このため
硬化時に排気を十分にしなければならない等の問題があ
り、環境面で好ましくない。一方、非反応性希釈剤を用
いる場合は、基板、チップへの汚染は殆どないが、ペー
スト層にボイドが発生し易い、ペースト厚みが一定しな
い等の問題があった。
In the case of a reactive diluent, a part of the paste is volatilized as an outgas during the curing of the paste, which easily contaminates the substrate, chip surface and the like. The adhesion between the resin and the substrate or chip surface deteriorates, the low stress properties used in the sealing resin composition and paste cannot be utilized, and the interface peels and package cracks when stress is applied tend to occur. there were. Although not related to the solder cracking property, the reactive diluent is easily volatilized and generally has a problem in the working environment. For this reason, there is a problem that exhaust must be sufficiently performed at the time of curing, which is not preferable from an environmental point of view. On the other hand, when the non-reactive diluent is used, there is almost no contamination on the substrate and the chip, but there are problems such as easy generation of voids in the paste layer and uneven thickness of the paste.

【0007】又、液状エポキシ樹脂、液状の硬化剤、銀
粉及びその他の成分の組み合わせがあるが、一般にリー
ドフレームにペーストを塗布する時に糸引き不良が発生
し易く、実際の作業に適用するには問題があった。従っ
て希釈剤、又は溶剤を添加しない低汚染性で、且つ耐半
田クラック性に優れたペーストの開発が望まれていた。
Further, there are combinations of liquid epoxy resin, liquid hardener, silver powder and other components. However, in general, when applying the paste to the lead frame, stringing failure is likely to occur. There was a problem. Therefore, there has been a demand for the development of a paste which does not contain a diluent or solvent and has low contamination and excellent solder crack resistance.

【0008】[0008]

【発明が解決しようとする課題】本発明は、低汚染性及
び耐半田クラック性に優れたダイボンディング用樹脂ペ
ーストを提供するものである。
SUMMARY OF THE INVENTION An object of the present invention is to provide a resin paste for die bonding which is excellent in low contamination and solder crack resistance.

【0009】[0009]

【課題を解決するための手段】本発明は、(A)下記一
般式(1)又は(2)で示されるウレタンアクリレート
樹脂又はウレタンメタクリレート樹脂、(B)下記一般
式(3)で示されるアクリル樹脂またはメタクリル樹
脂、(C)有機過酸化物、(D)無機フィラーを必須成
分とし、成分(A)100重量部に対して、成分(B)
が50〜200重量部、成分(C)が0.1〜50重量
部、成分(D)が50〜1200重量部である半導体用
ダイアタッチ樹脂ペーストである。
The present invention provides (A) a urethane acrylate resin or a urethane methacrylate resin represented by the following general formula (1) or (2), and (B) an acrylic resin represented by the following general formula (3). Resin or methacrylic resin, (C) an organic peroxide, and (D) an inorganic filler as essential components, and 100 parts by weight of the component (A) and the component (B)
Is 50 to 200 parts by weight, the component (C) is 0.1 to 50 parts by weight, and the component (D) is 50 to 1200 parts by weight.

【0010】[0010]

【化1】 Embedded image

【0011】[0011]

【化2】 Embedded image

【0012】[0012]

【化3】 Embedded image

【0013】本発明に用いる式(1)または(2)で示
されるウレタンアクリレート樹脂またはウレタンメタク
リレート樹脂は、低弾性率の特徴を有している。ポリプ
ロピレングリコールとイソホロンジイソシアネートの反
応物にヒドロキシエチルアクリレート又はヒドロキシエ
チルメタクリレートを更に反応させたものである。
The urethane acrylate resin or urethane methacrylate resin represented by the formula (1) or (2) used in the present invention has a characteristic of a low elastic modulus. The reaction product of polypropylene glycol and isophorone diisocyanate is further reacted with hydroxyethyl acrylate or hydroxyethyl methacrylate.

【0014】本発明の式(3)で示されるアクリル樹脂
またはメタクリル樹脂は、(A)の一般式(1)又は
(2)で示されるウレタンアクリレート樹脂またはウレ
タンメタクリレート樹脂100重量部に対して、50〜
200重量部であることが好ましい。50重量部未満で
あると希釈低粘度効果が少なくペーストの粘度が高くな
り過ぎ塗布作業性が低下するので好ましくなく、200
重量部を越えると硬化時に発生するアウトガスが増加し
て汚染性が損なわれ耐半田クラック性が低下するので好
ましくない。式(3)においてkの数は10以下である
ことが好ましい。kの数が10を越えると吸水性が増加
し、吸湿後の接着強度が低下するので好ましくない。
The acrylic resin or methacrylic resin represented by the formula (3) according to the present invention is used in an amount of 100 parts by weight of the urethane acrylate resin or the urethane methacrylate resin represented by the general formula (1) or (2). 50 ~
Preferably it is 200 parts by weight. When the amount is less than 50 parts by weight, the effect of diluting and low viscosity is small and the viscosity of the paste becomes too high, and the coating workability is lowered.
Exceeding the parts by weight increases the outgas generated at the time of curing, thereby impairing the contamination and deteriorating the solder crack resistance. In the formula (3), the number of k is preferably 10 or less. When the number of k exceeds 10, the water absorption increases, and the adhesive strength after moisture absorption decreases, which is not preferable.

【0015】本発明に用いられる有機過酸化物としては
特に限定されるものではなく、例えば1,1,3,3−
テトラメチルブチルパーオキシ−2−エチルヘキサネー
ト、t−ブチルパ−オキシ−2−エチルヘキサネート、
t−ヘキシルパ−オキシ−2−エトルヘキサネート、
1,1−ビス(t−ブチルパ−オキシ)−3,3,5−
トリメチルシクロヘキサン、1,1−ビス(t−ヘキシ
ルパ−オキシ)−3,3,5−トリメチルシクロヘキサ
ン、ビス(4−t−ブチルシクロヘキシル)パ−オキシ
ジカーボネート等が挙げられる。これら過酸化物は単独
あるいは硬化性をコントロールするため2種以上を混合
して用いることもできる。
The organic peroxide used in the present invention is not particularly limited. For example, 1,1,3,3-
Tetramethylbutyl peroxy-2-ethyl hexanate, t-butyl peroxy-2-ethyl hexanate,
t-hexylpa-oxy-2-ethorhexanate,
1,1-bis (t-butylperoxy) -3,3,5-
Trimethylcyclohexane, 1,1-bis (t-hexylperoxy) -3,3,5-trimethylcyclohexane, bis (4-t-butylcyclohexyl) peroxydicarbonate and the like can be mentioned. These peroxides can be used alone or in combination of two or more to control curability.

【0016】有機過酸化物の配合量は式(1)又は
(2)で示されるウレタンアクリレート樹脂またはウレ
タンメタクリレート樹脂100重量部に対して、0.1
〜50重量部であることが好ましい。0.1重量部未満
であると硬化反応が遅くなり過ぎ充分な接着強度が出な
いので好ましくなく、50重量部を越えると保存性が低
下するので好ましくない。さらに、樹脂の保存性を向上
するために各種重合禁止剤を予め添加しておくことも可
能である。
The amount of the organic peroxide is 0.1 to 100 parts by weight of the urethane acrylate resin or urethane methacrylate resin represented by the formula (1) or (2).
It is preferably from 50 to 50 parts by weight. If the amount is less than 0.1 part by weight, the curing reaction becomes too slow and sufficient adhesive strength is not obtained, and if it is more than 50 parts by weight, the storage stability decreases, which is not preferable. Further, various polymerization inhibitors can be added in advance in order to improve the storage stability of the resin.

【0017】本発明で用いる無機フィラーとしては炭酸
カルシウム、シリカ、アルミナ等の絶縁フィラー、銀
粉、金粉、ニッケル粉、銅粉等の導電性フィラーが挙げ
られるが用途によりこれらを複数混合しても良い。更に
ニードル詰りを防止するため、これらの粒径は50μm
以下が好ましい。無機フィラーの配合量は、式(1)又
は(2)で示されるウレタンアクリレート樹脂またはウ
レタンメタクリレート樹脂100重量部に対して、50
〜1200重量部であることが好ましい。50重量部未
満では熱伝導性が不充分であったり導電性が不足するた
めに好ましくなく、1200重量部を越えるとペースト
の粘度が上昇し塗布作業性が低下するので好ましくな
い。
Examples of the inorganic filler used in the present invention include insulating fillers such as calcium carbonate, silica, and alumina, and conductive fillers such as silver powder, gold powder, nickel powder, and copper powder. . In order to further prevent needle clogging, these particle sizes are 50 μm
The following is preferred. The amount of the inorganic filler is 50 parts by weight based on 100 parts by weight of the urethane acrylate resin or the urethane methacrylate resin represented by the formula (1) or (2).
It is preferably from 1,200 parts by weight. If the amount is less than 50 parts by weight, the heat conductivity is insufficient or the conductivity is insufficient. If the amount is more than 1200 parts by weight, the viscosity of the paste increases and the coating workability decreases, which is not preferable.

【0018】本発明における樹脂ペーストは必要により
消泡剤、カップリング剤、界面活性剤等の添加剤を用い
ることができる。本発明のペーストの製造方法として
は、例えば予備混合して三本ロール等を用いてペースト
を得て真空下脱泡する等がある。
In the resin paste of the present invention, additives such as an antifoaming agent, a coupling agent and a surfactant can be used as required. The method for producing the paste of the present invention includes, for example, pre-mixing to obtain a paste using a three-roll mill or the like, followed by defoaming under vacuum.

【0019】[0019]

【実施例】以下、実施例を用いて本発明を具体的に説明
する。なお配合割合は、重量部である。
The present invention will be specifically described below with reference to examples. The mixing ratio is part by weight.

【0020】実施例1〜6 ・1官能のウレタンアクリレート樹脂として、根上工業
(株)製UN−2111A(A成分) ・式(3)のアクリレート樹脂として新中村化学工業
(株)製AMP−20G(B成分) ・1,1,3,3-テトラメチルブチルパーオキシ-2-エチルヘ
キサネート(C成分) ・平均粒径3μmのフレーク状銀粉(D1成分) ・平均粒径6μmの球状シリカフィラー(D2成分) ・ビスフェノールFジグリシジルエーテル(E成分) ・ターシャリーブチルフェニルグリシジルエーテル(F
成分) ・ブチルセルソルブアセテート(G成分) ・フェノールノボラック樹脂(H成分) ・2-フェニル-4-メチルイミダゾール(I成分) を表1に示す割合で配合し、三本ロールで充分に混練、
脱泡後、樹脂ペーストを得て、各種性能を評価した。評
価結果を表1に示す。
Examples 1 to 6-As a monofunctional urethane acrylate resin, UN-2111A (component A) manufactured by Negami Kogyo Co., Ltd.-As an acrylate resin of formula (3), AMP-20G manufactured by Shin-Nakamura Chemical Co., Ltd. (B component)-1,1,3,3-tetramethylbutylperoxy-2-ethylhexanate (C component)-Flaky silver powder with an average particle size of 3 µm (D1 component)-Spherical silica filler with an average particle size of 6 µm (D2 component) Bisphenol F diglycidyl ether (E component) Tertiary butyl phenyl glycidyl ether (F
Ingredients)-Butyl cellosolve acetate (G component)-Phenol novolak resin (H component)-2-Phenyl-4-methylimidazole (I component) is blended in the ratio shown in Table 1, and thoroughly kneaded with three rolls.
After defoaming, a resin paste was obtained, and various performances were evaluated. Table 1 shows the evaluation results.

【0021】比較例1〜6 表2に示す割合で配合し、実施例と同様にして樹脂ペー
ストを得て、実施例と同様にして各種性能を評価した。
評価結果を表2に示す。
Comparative Examples 1 to 6 Resins were mixed in the proportions shown in Table 2 to obtain resin pastes in the same manner as in the examples, and various performances were evaluated in the same manner as in the examples.
Table 2 shows the evaluation results.

【0022】評価方法 粘 度 :25℃でE型粘度計を用いて回転数2.5
rpmでの粘度を測定した。 接着強度 :ペーストを用いて、2×2mmのシリコン
チップを銅フレームにマウントし、150℃のオーブン
中で30分間硬化した。硬化後プッシュプルゲージを用
い250℃での熱時ダイシェア強度(吸水前)を測定し
た。又硬化後のサンプルを85℃、相対湿度85%、7
2時間吸水処理し240℃での熱時ダイシェア強度(吸
水後)を測定した。 吸 水 率:テフロンシート上にペーストを50×50
×0.1mmになるように塗布し200℃のオーブン中
で60分間硬化した後、85℃、相対湿度85%、72
時間吸水処理を行ない、処理前後の重量変化より吸水率
を算出した。 ボ イ ド:リードフレームに10mm×10mmのガ
ラスチップをマウントし硬化後、外観でボイドをチェッ
クした。被着面積の15%以下のボイドならば良好、1
5%を越えるものを不良とした。 WB処理時の剥離:リードフレームに6mm×15mm
のチップをマウントし硬化後、250℃にてワイヤ−ボ
ンディング処理を行ない、ペレットの接着状態を観察し
た。剥離が無ければ良好、剥離が観察されれば不良とし
た。 耐パッケージクラック性:スミコンEME−7320
(住友ベークライト(株)・製)の封止材料を用い、下
記の条件で成形したパッケージを85℃、相対湿度85
%、168時間吸水処理した後、IRリフロー(240
℃、10秒)にかけ、断面観察により内部クラックの数
を測定し耐パッケージクラック性の指標とした。 パッケージ :80pQFP(14×20×2mm厚さ) チップサイズ :7.5×7.5mm(アルミ配線のみ) リードフレーム :42アロイ 成 形 :175℃、2分間 ポストモールドキュア:175℃、4時間 全パッケージ数 :12
Evaluation method Viscosity: 2.5 rpm at 25 ° C. using an E-type viscometer.
The viscosity at rpm was measured. Adhesive strength: Using a paste, a 2 × 2 mm silicon chip was mounted on a copper frame and cured in an oven at 150 ° C. for 30 minutes. After curing, the die shear strength under heat at 250 ° C. (before water absorption) was measured using a push-pull gauge. The cured sample was taken at 85 ° C, 85% relative humidity, 7
Water absorption treatment was performed for 2 hours, and the hot die shear strength at 240 ° C. (after water absorption) was measured. Water absorption: paste 50 × 50 on Teflon sheet
× 0.1 mm and cured in an oven at 200 ° C. for 60 minutes, then 85 ° C., relative humidity 85%, 72
Water absorption treatment was performed for a time, and the water absorption was calculated from the weight change before and after the treatment. Void: A glass chip of 10 mm × 10 mm was mounted on a lead frame, and after curing, voids were visually checked. Good if the void is 15% or less of the adhered area, 1
Those exceeding 5% were regarded as defective. Peeling during WB treatment: 6 mm x 15 mm on lead frame
After mounting and hardening the chip, a wire-bonding treatment was performed at 250 ° C., and the adhesion state of the pellet was observed. If there was no peeling, it was good, and if peeling was observed, it was bad. Package crack resistance: Sumicon EME-7320
Using a sealing material (manufactured by Sumitomo Bakelite Co., Ltd.), a package molded under the following conditions at 85 ° C. and a relative humidity of 85
% After a water absorption treatment for 168 hours, followed by IR reflow (240
C. for 10 seconds), the number of internal cracks was measured by cross-section observation, and the index was used as an index of package crack resistance. Package: 80pQFP (14 × 20 × 2mm thickness) Chip size: 7.5 × 7.5mm (only aluminum wiring) Lead frame: 42 alloy Molding: 175 ° C, 2 minutes Post-mold cure: 175 ° C, 4 hours All Number of packages: 12

【0023】[0023]

【表1】 [Table 1]

【0024】[0024]

【表2】 [Table 2]

【0025】[0025]

【発明の効果】本発明は、従来のエポキシ樹脂で使用し
ていた反応性希釈剤、溶剤を含有しないため、硬化時の
アウトガスによる基材の汚染が殆どなく、且つ硬化物層
にボイドの発生もなく、耐半田クラック性に優れるもの
である。
According to the present invention, the reactive diluent and solvent used in the conventional epoxy resin are not contained, so that there is almost no contamination of the substrate due to outgas at the time of curing, and voids are generated in the cured product layer. None, and has excellent solder crack resistance.

───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 FI C08L 33/08 C08L 33/08 ──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. 6 Identification code FI C08L 33/08 C08L 33/08

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 (A)下記一般式(1)又は(2)で示
されるウレタンアクリレート樹脂又はウレタンメタクリ
レート樹脂、(B)下記一般式(3)で示されるアクリ
ル樹脂またはメタクリル樹脂、(C)有機過酸化物、
(D)無機フィラーを必須成分とし、成分(A)100
重量部に対して、成分(B)が50〜200重量部、成
分(C)が0.1〜50重量部、成分(D)が50〜1
200重量部である半導体用ダイアタッチ樹脂ペース
ト。 【化1】 【化2】 【化3】
(A) a urethane acrylate resin or a urethane methacrylate resin represented by the following general formula (1) or (2); (B) an acrylic resin or methacryl resin represented by the following general formula (3); (C) Organic peroxides,
(D) An inorganic filler is an essential component, and component (A) 100
Component (B) is 50 to 200 parts by weight, component (C) is 0.1 to 50 parts by weight, and component (D) is 50 to 1 part by weight based on parts by weight.
200 parts by weight of die attach resin paste for semiconductor. Embedded image Embedded image Embedded image
JP9222216A 1997-08-19 1997-08-19 Die-attach resin paste for semiconductor Pending JPH1161086A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9222216A JPH1161086A (en) 1997-08-19 1997-08-19 Die-attach resin paste for semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9222216A JPH1161086A (en) 1997-08-19 1997-08-19 Die-attach resin paste for semiconductor

Publications (1)

Publication Number Publication Date
JPH1161086A true JPH1161086A (en) 1999-03-05

Family

ID=16778956

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9222216A Pending JPH1161086A (en) 1997-08-19 1997-08-19 Die-attach resin paste for semiconductor

Country Status (1)

Country Link
JP (1) JPH1161086A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11335630A (en) * 1998-05-27 1999-12-07 Sumitomo Bakelite Co Ltd Die attaching paste
JP2001257220A (en) * 2000-03-13 2001-09-21 Sumitomo Bakelite Co Ltd Die attach paste and semiconductor device
JP2001257219A (en) * 2000-03-13 2001-09-21 Sumitomo Bakelite Co Ltd Die attach paste and semiconductor device
JP2007131781A (en) * 2005-11-11 2007-05-31 Sumitomo Bakelite Co Ltd Resin composition and semiconductor device produced by using resin composition
WO2016121806A1 (en) * 2015-01-29 2016-08-04 住友ベークライト株式会社 Paste adhesive composition, semiconductor device, method for manufacturing semiconductor device, and method for bonding heat radiation plate
WO2022259786A1 (en) * 2021-06-11 2022-12-15 株式会社スリーボンド Thermally conductive resin composition and cured product

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11335630A (en) * 1998-05-27 1999-12-07 Sumitomo Bakelite Co Ltd Die attaching paste
JP2001257220A (en) * 2000-03-13 2001-09-21 Sumitomo Bakelite Co Ltd Die attach paste and semiconductor device
JP2001257219A (en) * 2000-03-13 2001-09-21 Sumitomo Bakelite Co Ltd Die attach paste and semiconductor device
JP2007131781A (en) * 2005-11-11 2007-05-31 Sumitomo Bakelite Co Ltd Resin composition and semiconductor device produced by using resin composition
WO2016121806A1 (en) * 2015-01-29 2016-08-04 住友ベークライト株式会社 Paste adhesive composition, semiconductor device, method for manufacturing semiconductor device, and method for bonding heat radiation plate
JPWO2016121806A1 (en) * 2015-01-29 2017-04-27 住友ベークライト株式会社 Paste adhesive composition, semiconductor device, method for manufacturing semiconductor device, and method for bonding heat sink
CN107207941A (en) * 2015-01-29 2017-09-26 住友电木株式会社 Paste-type adhesive composition, semiconductor device, the adhesive bonding method of the manufacture method of semiconductor device and heat sink
EP3252123A4 (en) * 2015-01-29 2018-07-25 Sumitomo Bakelite Co.,Ltd. Paste adhesive composition, semiconductor device, method for manufacturing semiconductor device, and method for bonding heat radiation plate
US10259976B2 (en) 2015-01-29 2019-04-16 Sumitomo Bakelite Co., Ltd. Paste-like adhesive composition, semiconductor device, method for manufacturing semiconductor device, and method for bonding heatsink
WO2022259786A1 (en) * 2021-06-11 2022-12-15 株式会社スリーボンド Thermally conductive resin composition and cured product

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