JPH1149841A - Resin paste for semiconductor - Google Patents
Resin paste for semiconductorInfo
- Publication number
- JPH1149841A JPH1149841A JP9207471A JP20747197A JPH1149841A JP H1149841 A JPH1149841 A JP H1149841A JP 9207471 A JP9207471 A JP 9207471A JP 20747197 A JP20747197 A JP 20747197A JP H1149841 A JPH1149841 A JP H1149841A
- Authority
- JP
- Japan
- Prior art keywords
- curing agent
- epoxy resin
- weight
- pts
- phenol
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Epoxy Resins (AREA)
- Die Bonding (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明はIC、LSI等の半導体
素子を金属フレーム等に接着する樹脂ペーストに関する
ものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a resin paste for bonding a semiconductor element such as an IC or an LSI to a metal frame or the like.
【0002】[0002]
【従来の技術】エレクトロニクス業界の最近の著しい発
展により、トランジスター、IC、LSI、超LSIと進化して
きており、これら半導体素子に於ける回路の集積度が急
激に増大すると共に大量生産が可能となり、これらを用
いた半導体製品の普及に伴って、その量産に於ける作業
性の向上並びにコストダウンが重要な問題となってき
た。従来は半導体素子を金属フレームなどの導体にAu-S
i共晶法により接合し、次いでハーメチックシールによ
って封止して、半導体製品とするのが普通であった。し
かし量産時の作業性、コストの面より、樹脂封止法が開
発され、現在は一般化されている。これに伴い、マウン
ト工程に於けるAu-Si共晶法の改良としてハンダ材料や
樹脂ペースト即ちマウント用樹脂による方法が取り上げ
られるようになった。2. Description of the Related Art With the recent remarkable development of the electronics industry, transistors, ICs, LSIs, and super LSIs have been evolving. With the spread of semiconductor products using these, improvement in workability and cost reduction in mass production have become important issues. Conventionally, semiconductor elements were replaced with Au-S
In general, they were joined by an eutectic method and then sealed by a hermetic seal to obtain a semiconductor product. However, in view of workability and cost during mass production, a resin encapsulation method has been developed and is now generally used. Along with this, a method using a solder material or a resin paste, that is, a mounting resin has come to be taken up as an improvement of the Au-Si eutectic method in the mounting step.
【0003】しかし、ハンダ法では信頼性が低いこと、
素子の電極の汚染を起こし易いこと等が欠点とされ、高
熱伝導性を要するパワートランジスター、パワーICの素
子に使用が限られている。これに対しマウント用樹脂は
ハンダ法に較べ、作業性に於いても信頼性等に於いても
優れており、その需要が急激に増大している。However, the solder method has low reliability,
The disadvantage is that the electrodes of the element are liable to be contaminated, and the use thereof is limited to power transistors and power IC elements that require high thermal conductivity. On the other hand, the mounting resin is superior in workability and reliability as compared with the soldering method, and the demand thereof is rapidly increasing.
【0004】更に近年、IC等の集積度の高密度化によ
り、チップが大型化してきており、一方従来用いられて
きたりードフレームである42合金フレームが高価なこと
より、コストダウンの目的から銅フレームが用いられる
ようになってきた。ここでIC等のチップの大きさが約4
〜5mm角より大きくなると、IC等の組立工程での加熱に
より、マウント法としてAu-Si共晶法を用いると、チッ
プの熱膨張率と銅フレームの熱膨張率との差からチップ
のクラックや反りによる特性不良が問題となってきてい
る。In recent years, chips have been increasing in size due to the increase in the degree of integration of ICs and the like. On the other hand, since the 42 alloy frame which has been conventionally used is expensive, the copper frame is used for cost reduction purposes. Has come to be used. Here, the size of the chip such as IC is about 4
When it is larger than ~ 5 mm square, heating in the assembly process of IC etc., if the Au-Si eutectic method is used as a mounting method, chip cracks and cracks due to the difference between the coefficient of thermal expansion of the chip and the coefficient of thermal expansion of the copper frame Defective characteristics due to warpage have become a problem.
【0005】即ちこれは、チップの材料であるシリコン
等の熱膨張率が3×10-6/℃であるのに対し、42合金フレ
ームでは8×10-6/℃であるが、銅フレームでは20×10-6
/℃と大きくなる為である。これに対し、マウント法と
してマウント用樹脂を用いることが考えられるが、従来
のエポキシ樹脂系ペーストでは、熱硬化性樹脂で三次元
硬化する為、弾性率が高く、チップと銅フレームとの歪
を吸収するには至らなかった。That is, the thermal expansion coefficient of silicon or the like as a chip material is 3 × 10 −6 / ° C., whereas that of a 42 alloy frame is 8 × 10 −6 / ° C. 20 × 10 -6
/ ° C. On the other hand, it is conceivable to use a mounting resin as the mounting method.However, with a conventional epoxy resin-based paste, since the thermosetting resin is three-dimensionally cured, the elastic modulus is high, and the distortion between the chip and the copper frame is reduced. Did not absorb.
【0006】また、硬化時に架橋密度を小さくするよう
なエポキシ樹脂、例えばエポキシモノマーを多量に含む
ものを使用すれば弾性率を低くできるが、接着強度が低
下するという欠点があった。更に通常のエポキシ樹脂は
粘度が高く、これに無機フィラーを配合すると粘度が高
くなりすぎ、ディスペンス時の糸ひきが発生し作業性が
悪くなる。作業性を改良するために多量の溶剤を添加す
るとボイドが発生するという問題があった。If an epoxy resin which reduces the crosslink density during curing, for example, a resin containing a large amount of an epoxy monomer, is used, the modulus of elasticity can be lowered, but there is a disadvantage that the adhesive strength is reduced. Furthermore, a normal epoxy resin has a high viscosity, and if an inorganic filler is added thereto, the viscosity becomes too high, and threading occurs during dispensing, resulting in poor workability. When a large amount of solvent is added to improve workability, there is a problem that voids are generated.
【0007】[0007]
【発明が解決しようとする課題】本発明の目的は、熱時
接着強度を低下させないで、硬化物の低弾性率化を計る
ことにより、IC等の大型チップと銅フレーム等の組合
せでもチップクラックや反りによるIC等の特性不良が
起こらず、速硬化でかつボイドの発生のない樹脂ペース
トを提供することにある。SUMMARY OF THE INVENTION It is an object of the present invention to reduce the modulus of elasticity of a cured product without lowering the adhesive strength when hot, and to achieve chip cracking even in a combination of a large chip such as an IC and a copper frame. It is an object of the present invention to provide a resin paste which does not cause characteristic defects such as IC due to warpage and which is fast-cured and free from voids.
【0008】[0008]
【課題を解決するための手段】本発明は(A)一般式
(1)で示される液状エポキシ樹脂とエポキシ基を有す
る反応性希釈剤の重量比が50:50〜90:10であ
る液状エポキシ樹脂、(B)フェノール硬化剤、(C)
潜在性硬化剤、(D)第3級アミン又はその塩である硬
化促進剤及び(E)無機フィラーを必須成分とし、成分
(A)100重量部に対し、成分(B)が10〜30重
量部、成分(C)が0.5〜5重量部であり、かつ成分
(A)(B)(C)の合計100重量部に対し、成分
(D)が0.1〜10重量部である半導体用樹脂ペース
トである。According to the present invention, there is provided (A) a liquid epoxy resin having a weight ratio of a liquid epoxy resin represented by the general formula (1) to a reactive diluent having an epoxy group of 50:50 to 90:10. Resin, (B) phenol curing agent, (C)
The latent curing agent, (D) a curing accelerator which is a tertiary amine or a salt thereof, and (E) an inorganic filler are essential components, and the component (B) is 10 to 30 parts by weight based on 100 parts by weight of the component (A). Parts, component (C) is 0.5 to 5 parts by weight, and component (D) is 0.1 to 10 parts by weight with respect to a total of 100 parts by weight of components (A), (B) and (C). It is a resin paste for semiconductors.
【0009】[0009]
【化1】 Embedded image
【0010】本発明に用いる液状エポキシ樹脂(A)は
一般式(1)で示される液状エポキシ樹脂とエポキシ基
を有する反応性希釈剤の重量比が50:50〜90:1
0である液状エポキシ樹脂で、一般式(1)で示される
液状エポキシ樹脂は分子量により各種のものがあるが、
分子量が小さく常温で液状のものが、配合するときの作
業性及び配合後の粘度の点から好ましい。The liquid epoxy resin (A) used in the present invention has a weight ratio of the liquid epoxy resin represented by the general formula (1) to the reactive diluent having an epoxy group of 50:50 to 90: 1.
There are various types of liquid epoxy resins represented by general formula (1) depending on the molecular weight.
Those having a small molecular weight and being liquid at room temperature are preferred in view of workability at the time of compounding and viscosity after compounding.
【0011】一般式(1)で示される液状エポキシ樹脂
と混合するエポキシ基を有する反応性希釈剤にはn−ブ
チルグリシジルエーテル、バーサティック酸グリシジル
エステル、スチレンオサイド、エチルヘキシルグリシジ
ルエーテル、フェニルグリシジルエーテル、クレジルグ
リシジルエーテル、ブチルフェニルグリシジルエーテル
等があり、これらの内の1種類あるいは複数種と併用可
能である。Reactive diluents having an epoxy group to be mixed with the liquid epoxy resin represented by the general formula (1) include n-butyl glycidyl ether, glycidyl versatate, styrene oside, ethylhexyl glycidyl ether, and phenyl glycidyl ether. And cresyl glycidyl ether, butylphenyl glycidyl ether and the like, and one or more of these can be used in combination.
【0012】一般式(1)で示される液状エポキシ樹脂
とエポキシ基を有する反応性希釈剤の重量比は50:5
0〜90:10であることが好ましい。反応性希釈剤の
重量比が50を越えると接着強度が弱く、10未満では
樹脂ペーストとしたときに粘度が高くなり作業性が低下
する。The weight ratio of the liquid epoxy resin represented by the general formula (1) to the reactive diluent having an epoxy group is 50: 5.
It is preferably 0 to 90:10. When the weight ratio of the reactive diluent exceeds 50, the adhesive strength is weak, and when it is less than 10, the viscosity becomes high when the resin paste is used, and the workability is reduced.
【0013】本発明においては他のエポキシ樹脂を混合
して用いてもよい。上記液状エポキシ樹脂と混合する場
合の他のエポキシ樹脂としては,例えばビスフェノール
A、ビスフェノールF、フェノールノボラック、クレゾ
ールノボラック類とエピクロルヒドリンとの反応により
得られるポリグリシジルエーテル、ブタンジオールジグ
リシジルエーテル、ネオペンチルグリコールジグリシジ
ルエーテル等の脂肪族エポキシ、ジグリシジルヒダント
イン等の複素環式エポキシ、ビニルシクロヘキセンジオ
キサイド、ジシクロペンタジエンジオキサイド、アリサ
イクリックジエポキシーアジペイトのような脂環式エポ
キシがあり、これらの内の1種類あるいは複数種と併用
可能である。In the present invention, other epoxy resins may be mixed and used. Other epoxy resins when mixed with the above liquid epoxy resin include, for example, bisphenol A, bisphenol F, phenol novolak, polyglycidyl ether, butanediol diglycidyl ether, and neopentyl glycol obtained by reacting cresol novolaks with epichlorohydrin. Aliphatic epoxies such as aliphatic epoxies such as diglycidyl ether, heterocyclic epoxies such as diglycidyl hydantoin, vinylcyclohexene dioxide, dicyclopentadiene dioxide, and alicyclic diepoxy-adipate are among these. Can be used in combination with one or more of them.
【0014】本発明に用いるフェノール硬化剤(B)は
エポキシ樹脂の硬化剤として用いられる。本発明に用い
るフェノール硬化剤はエポキシ基と反応して架橋にあず
かる活性水素基を分子当り2個以上有することが望まし
い。このようなフェノール化合物の例としては、ビスフ
ェノールA、ビスフェノールF、ビスフェノールS、テ
トラメチルビスフェノールA、テトラメチルビスフェノ
ールF、テトラメチルビスフェノールS、ジヒドロキシ
ジフェニルエーテル、ジヒドロキシベンゾフェノン、o-
ヒドロキシフェノール、m-ヒドロキシフェノール、p-ヒ
ドロキシフェノール、ビフェノール、テトラメチルビフ
ェノール、エチリデンビスフェノール、メチルエチリデ
ンビス(メチルフェノール)、シク口へキシリデンビスフ
ェノール、またフェノール、クレゾール、キシレノール
等の1価フェノール類とホルムアルデヒドとを稀薄水溶
液中強酸性下で反応させることによって得られるフェノ
ールノボラック樹脂、1価フェノール類とアクロレイ
ン、グリオキザール等の多官能アルデヒド類との酸性下
の初期縮合物や、レゾルシン、カテコール、ハイドロキ
ノン等の多価フェノール類とホルムアルデヒドとの酸性
下の初期縮合物などであり、これらは単独でも混合して
用いてもよい。The phenol curing agent (B) used in the present invention is used as a curing agent for an epoxy resin. The phenol curing agent used in the present invention desirably has two or more active hydrogen groups per molecule which react with epoxy groups and participate in crosslinking. Examples of such phenol compounds include bisphenol A, bisphenol F, bisphenol S, tetramethylbisphenol A, tetramethylbisphenol F, tetramethylbisphenol S, dihydroxydiphenyl ether, dihydroxybenzophenone, o-
Monohydric phenols such as hydroxyphenol, m-hydroxyphenol, p-hydroxyphenol, biphenol, tetramethylbiphenol, ethylidene bisphenol, methylethylidenebis (methylphenol), hexidenehexidenebisphenol, phenol, cresol, xylenol Phenol novolak resin obtained by reacting formaldehyde with a dilute aqueous solution under strong acidity, initial condensate of monohydric phenols with polyfunctional aldehydes such as acrolein and glyoxal, and resorcinol, catechol, hydroquinone, etc. Of polyhydric phenols and formaldehyde under acidic conditions, and these may be used alone or as a mixture.
【0015】フェノール硬化剤(B)の配合量は液状エ
ポキシ樹脂(A)に対し10〜30重量%使用するのが
接着性及び低応力性の点から好ましい。The amount of the phenol curing agent (B) to be used is preferably from 10 to 30% by weight based on the liquid epoxy resin (A) from the viewpoint of adhesiveness and low stress.
【0016】本発明に用いる潜在性硬化剤(C)はエポキ
シ樹脂の硬化剤として用いられ、例えばアジピン酸ジヒ
ドラジド、ドデカン酸ジヒドラジド、イソフタル酸ジヒ
ドラジド、P-オキシ安息香酸ジヒドラジド等のカルボン
酸ジヒドラジドやジシアンジアミドである。潜在性硬化
剤を用いるとフェノール硬化剤単独で硬化した場合に比
べ著しく熱時接着強度が高くなる。又潜在性硬化剤はフ
ェノール硬化剤よりも当量が小さいため、併用すること
により粘度がそれ程高くなく、又潜在性であるため保存
性にも優れたペーストを得ることができる。潜在性硬化
剤(C)の配合量は全エポキシ樹脂に対し、0.5〜5重量%
使用するのが好ましい。0.5重量%未満では熱時接着強
度が弱く、5重量%を越えると低応力性が低下するので
好ましくない。The latent curing agent (C) used in the present invention is used as a curing agent for epoxy resins. It is. When a latent curing agent is used, the adhesive strength when heated becomes significantly higher than when cured with a phenol curing agent alone. Further, since the latent curing agent has a smaller equivalent weight than the phenol curing agent, it is possible to obtain a paste which is not so high in viscosity when used in combination and which has excellent preservability due to the latent curing agent. The amount of the latent curing agent (C) is 0.5 to 5% by weight based on the total epoxy resin.
It is preferred to use. If it is less than 0.5% by weight, the adhesive strength upon heating is weak, and if it exceeds 5% by weight, the low stress property is undesirably reduced.
【0017】本発明に用いる硬化促進剤は第3級アミン
又はその塩であり、ジメチルベンジルアミン、トリス
(ジメチルアミノメチル)フェノール、脂環式超塩基類、
イミタゾール類の群より選ばれた少くとも1種の第3級ア
ミンとフェノール類又は塩基酸類との塩であることが望
ましい。脂環式超塩基とはトリメチレンジアミン、1,8
ージアザビシクロ(5,4,0)ウンデセン-7、ドデカヒドロ
−1,4,7,9bテトラアザフェナレンなどである。イミダ
ゾール類とは2-及び/または4-の位置にメチル、エチ
ル、プロピルまたはよりC17までの長鎖のアルキル
基、フェニル基などの置換基を導入したものである。こ
れらの第3級アミン類と塩を形成するものとしては、フ
タル酸(o,m,p)、テトラヒドロフタル酸、エンドメチレ
ンテトラヒドロフタル酸、ヘキサヒドロフタル酸、トリ
メリット酸、アジピン酸、コハク酸、マレイン酸、イタ
コン酸などの塩基酸、またはレゾルシン、ピロガロー
ル、ハイドロキノン、フェノール、ビスフェノールA、
ビスフェノールF、ビスフェノールS、低分子ノボラッ
クなどのフェノール類である。これらの第3級アミンの
塩は液状エポキシ樹脂(A)、フェノール硬化剤
(B)、潜在性硬化剤(C)の総量に対して0.1〜1
0重量%使用することが望ましい。これより少いと、促
進硬化が不十分であり、これより多くしても硬化がさほ
ど促進されないのに保存性が低下するおそれがあるので
何れも望ましくない。The curing accelerator used in the present invention is a tertiary amine or a salt thereof, such as dimethylbenzylamine, trisamine or the like.
(Dimethylaminomethyl) phenol, alicyclic superbases,
Desirably, it is a salt of at least one tertiary amine selected from the group of imidazoles with phenols or basic acids. Alicyclic superbases are trimethylenediamine, 1,8
-Diazabicyclo (5,4,0) undecene-7, dodecahydro-1,4,7,9b tetraazaphenalene and the like. The imidazoles are those obtained by introducing a substituent such as methyl, ethyl, propyl or a long-chain alkyl group up to C17 or a phenyl group at the 2- and / or 4-position. Those that form salts with these tertiary amines include phthalic acid (o, m, p), tetrahydrophthalic acid, endomethylenetetrahydrophthalic acid, hexahydrophthalic acid, trimellitic acid, adipic acid, succinic acid , Maleic acid, basic acids such as itaconic acid, or resorcinol, pyrogallol, hydroquinone, phenol, bisphenol A,
Phenols such as bisphenol F, bisphenol S, and low molecular novolak. These tertiary amine salts are used in an amount of 0.1 to 1 with respect to the total amount of the liquid epoxy resin (A), the phenol curing agent (B), and the latent curing agent (C).
It is desirable to use 0% by weight. When the amount is less than this, the accelerated curing is insufficient, and when the amount is more than this, there is a possibility that the preservability may be deteriorated though the curing is not accelerated so much, and neither is desirable.
【0018】本発明に用いる無機フィラー(F)として
は銀粉、シリカフィラー等がある。銀粉は導電性を付与
するために用いられ、ハロゲンイオン、アルカリ金属イ
オン等のイオン性不純物の含有量は10ppm以下であるこ
とが好ましい。又銀粉の形状としてはフレーク状、樹脂
状や球状等が用いられる。必要とするペーストの粘度に
より、使用する銀粉の粒径は異なるが、通常平均粒径は
2〜10μm、最大粒径は50μm程度のものが好ましい。
又比較的粗い銀粉と細かい銀粉とを混合して用いること
もでき、形状についても各種のものを適宜混合してもよ
い。The inorganic filler (F) used in the present invention includes silver powder, silica filler and the like. Silver powder is used to impart conductivity, and the content of ionic impurities such as halogen ions and alkali metal ions is preferably 10 ppm or less. The shape of the silver powder may be flake, resin, sphere or the like. Depending on the viscosity of the required paste, the particle size of the silver powder used varies, but the average particle size is usually
Those having a size of 2 to 10 μm and a maximum particle size of about 50 μm are preferred.
In addition, a mixture of relatively coarse silver powder and fine silver powder can be used, and various shapes may be appropriately mixed.
【0019】本発明に用いるシリカフィラーは平均粒径
1〜20μmで最大粒径50μm以下のものである。平均粒径
が1μm以下だと粘度が高くなり、20μm以上だと塗布
又は硬化時に樹脂分が流出するのでブリードが発生する
ため好ましくない。最大粒径が50μm以上だとディスペ
ンサーでペーストを塗布するときに、ニードルの出口を
塞ぎ長時間の連続使用ができない。又比較的粗いシリカ
フィラーと細かいシリカフィラーとを混合して用いるこ
ともでき、形状についても各種のものを適宜混合しても
よい。又、必要とされる特性を付与するために本発明以
外の無機フィラーを使用してもよい。The silica filler used in the present invention has an average particle size.
It has a maximum particle size of 50 μm or less with a size of 1 to 20 μm. When the average particle size is 1 μm or less, the viscosity increases, and when the average particle size is 20 μm or more, the resin component flows out at the time of coating or curing, which is not preferable because bleeding occurs. If the maximum particle size is 50 μm or more, when applying the paste with a dispenser, the outlet of the needle is blocked and long-term continuous use cannot be performed. Further, a mixture of a relatively coarse silica filler and a fine silica filler may be used, and various shapes may be appropriately mixed. Further, an inorganic filler other than the present invention may be used in order to impart required properties.
【0020】本発明における樹脂ペーストには、必要に
より用途に応じた特性を損なわない範囲内で、シランカ
ップリング剤、チタネートカップリング剤、顔料、染
料、消泡剤、界面活性剤、溶剤等の添加剤を用いること
ができる。本発明の製造法としては、例えば各成分を予
備混合して三本ロール等を用いて、ペーストを得て、真
空下脱抱すること等がある。The resin paste according to the present invention may contain a silane coupling agent, a titanate coupling agent, a pigment, a dye, a defoaming agent, a surfactant, a solvent, etc., as long as the properties according to the intended use are not impaired. Additives can be used. The production method of the present invention includes, for example, premixing each component, using a three-roll or the like to obtain a paste, and deconcentrating in a vacuum.
【0021】[0021]
【実施例】本発明を実施例で具体的に説明する.各成分
の配合割合は重量部とする.EXAMPLES The present invention will be described specifically with reference to examples. The mixing ratio of each component is parts by weight.
【0022】実施例1〜8、比較例1〜10 表1に示した組成の各成分と無機フィラーを配合し、三
本ロールで混練して樹脂ペーストを得た。この樹脂ペー
ストを真空チャンバーにて2mmHgで30分間脱泡した後、
以下の方法により各種の性能を評価した。評価結果を表
1に示す。Examples 1 to 8 and Comparative Examples 1 to 10 Each component having the composition shown in Table 1 was mixed with an inorganic filler and kneaded with a three-roll mill to obtain a resin paste. After defoaming this resin paste at 2 mmHg for 30 minutes in a vacuum chamber,
Various performances were evaluated by the following methods. Show evaluation results
Shown in 1.
【0023】用いる原料成分・一般式(1)で示される
液状エポキシ樹脂(エポキシA):粘度2000mPa・s、エ
ポキシ当量270Raw material components used: Liquid epoxy resin represented by the general formula (1) (epoxy A): viscosity 2000 mPa · s, epoxy equivalent 270
【0024】[0024]
【化1】 Embedded image
【0025】 ・ビスフェノールA型エポキシ樹脂(BPA) :粘度9000mPa・s、エポキシ当量185 ・ビスフェノールF型エポキシ樹脂(BPF) :粘度5000mPa・s、エポキシ当量170 ・反応性希釈剤 :フェニルグリシジルエーテル ・フェノール硬化剤(B) :ビスフェノールF、 ・潜在性硬化剤(C):ジシアンジアミド(DDA) ・硬化促進剤(D) :1,8−ジアザビシクロ(5,4,0)ウンデセン−7 (DBU) ・無機フィラー(F):銀粉 :粒径が0.1〜50μmで平均粒径3μmのフレーク状 シリカフィラー:平均粒径5μmで最大粒径20μmの シリカフィラーBisphenol A type epoxy resin (BPA): viscosity 9000 mPa · s, epoxy equivalent 185 bisphenol F type epoxy resin (BPF): viscosity 5000 mPa · s, epoxy equivalent 170 reactive diluent: phenyl glycidyl ether Curing agent (B): Bisphenol F ・ Latent curing agent (C): Dicyandiamide (DDA) ・ Curing accelerator (D): 1,8-diazabicyclo (5,4,0) undecene-7 (DBU) ・ Inorganic Filler (F): Silver powder: Flake-shaped silica filler with particle diameter of 0.1 to 50 μm and average particle diameter of 3 μm: Silica filler with average particle diameter of 5 μm and maximum particle diameter of 20 μm
【0026】評価方法 粘度 :E型粘度計(3°コーン)を用い25
℃、2.5rpmでの値を測定し粘度とした。 弾性率 :テフロンシート上にペーストを幅10m
m長さ約150mm厚さ100μmに塗布し、200℃
オーブン中60分間硬化した後、引っ張り試験機で試験
長100mm引っ張り速度1mm/分にて測定し得られ
た応力ーひずみ曲線の初期勾配より弾性率を算出した。 接着強度 :2×2mmのシリコンチップをペースト
を用いて銅フレームにマウントし200℃中60分間オ
ーブンで硬化した。硬化後マウント強度測定装置を用い
25℃,250℃での熱時ダイシェア強度を測定した。 反り量 :6×15×0.3mmシリコンチップを
銅フレーム(200μm厚さ)に導電性樹脂ペーストで
マウントし、200℃60分間硬化した後、チップの反
りを表面粗さ計(測定長13mm)で測定した。 ポットライフ:25℃の恒温槽内に樹脂ペーストを放置
した時の粘度が初期粘度の1.2倍以上増粘するまでの
日数を測定した。Evaluation method Viscosity: 25 using an E-type viscometer (3 ° cone)
The viscosity was measured at a temperature of 2.5 ° C. and a temperature of 2.5 ° C., and the viscosity was determined. Elastic modulus: Paste 10m width on Teflon sheet
m length about 150mm thickness 100μm, 200 ℃
After curing in an oven for 60 minutes, the modulus of elasticity was calculated from the initial gradient of the stress-strain curve obtained by measuring with a tensile tester a test length of 100 mm and a pulling rate of 1 mm / min. Adhesive strength: A silicon chip of 2 × 2 mm was mounted on a copper frame using a paste and cured in an oven at 200 ° C. for 60 minutes. After curing, the die shear strength under heat at 25 ° C. and 250 ° C. was measured using a mount strength measuring device. Warpage amount: A silicon chip of 6 × 15 × 0.3 mm is mounted on a copper frame (200 μm thick) with a conductive resin paste and cured at 200 ° C. for 60 minutes, and then the warpage of the chip is measured with a surface roughness meter (measuring length 13 mm). Was measured. Pot life: The number of days until the viscosity when the resin paste was allowed to stand in a thermostat at 25 ° C. increased to 1.2 times or more the initial viscosity was measured.
【0027】[0027]
【表1】 [Table 1]
【0028】[0028]
【表2】 [Table 2]
【0029】実施例1〜8では熱時接着強度、低応力性
(低弾性率、低反り量)及びポットライフ長い優れたペ
ーストが得られるが、比較例1はビスフェノールA型エ
ポキシ樹脂を使用したため低応力性が悪く、反り量が大
きくなりチップクラックが発生する。比較例2はビスフ
ェノールF型エポキシ樹脂を使用したため低応力性が悪
く、反り量が大きくなりチップクラックが発生する。比
較例3は反応性希釈剤の配合量が多く、接着強度が著し
く低下する。比較例4は反応性希釈剤の配合量が少な
く、粘度が著しく高くなり作業性が低下する。比較例5
はフェノール硬化剤の配合量が少なく、接着強度が著し
く低下する。比較例6はフェノール硬化剤の配合量が多
く、反り量が大きくなりチップクラックが発生する。比
較例7は潜在性硬化剤の配合量が少なく、接着強度が著
しく低下する。比較例8は潜在性硬化剤の配合量が多
く、反り量が大きくなりチップクラックが発生する。比
較例9は硬化促進剤の配合量が少なく、接着強度が著し
く低下する。比較例10は硬化促進剤の配合量が多く、
ポットライフが著しく短くなる。In Examples 1 to 8, pastes having excellent adhesive strength at heat, low stress (low elastic modulus, low warpage) and long pot life can be obtained. Comparative Example 1 uses a bisphenol A type epoxy resin. Poor low stress properties, large warpage, and chip cracks. In Comparative Example 2, a bisphenol F type epoxy resin was used, so that the low stress property was poor, the amount of warpage was large, and chip cracks occurred. In Comparative Example 3, the content of the reactive diluent was large, and the adhesive strength was significantly reduced. In Comparative Example 4, the amount of the reactive diluent was small, the viscosity was significantly increased, and the workability was reduced. Comparative Example 5
The amount of the phenol curing agent is small, and the adhesive strength is significantly reduced. In Comparative Example 6, the amount of the phenol curing agent was large, the amount of warpage was large, and chip cracks occurred. In Comparative Example 7, the amount of the latent curing agent was small, and the adhesive strength was significantly reduced. In Comparative Example 8, the amount of the latent curing agent was large, the amount of warpage was large, and chip cracks occurred. In Comparative Example 9, the amount of the curing accelerator was small, and the adhesive strength was significantly reduced. Comparative Example 10 had a large amount of the curing accelerator,
Pot life is significantly shortened.
【0030】[0030]
【発明の効果】本発明の半導体用樹脂ペーストは、熱時
接着強度が高く、かつ応力緩和性に優れているため、IC
等の大型チップと銅フレームとの接着に適しており、IC
組立工程でのチップクラックやチップ歪みによるIC等の
特性不良を防止できる。The resin paste for semiconductors of the present invention has a high adhesive strength when heated and an excellent stress relaxation property.
It is suitable for bonding large-sized chips such as
Characteristic defects such as ICs due to chip cracks and chip distortion in the assembly process can be prevented.
Claims (1)
キシ樹脂とエポキシ基を有する反応性希釈剤の重量比が
50:50〜90:10である液状エポキシ樹脂、
(B)フェノール硬化剤、(C)潜在性硬化剤、(D)
第3級アミン又はその塩である硬化促進剤及び(E)無
機フィラーを必須成分とし、成分(A)100重量部に
対し、成分(B)が10〜30重量部、成分(C)が
0.5〜5重量部であり、かつ成分(A)(B)(C)
の合計100重量部に対し、成分(D)が0.1〜10
重量部であることを特徴とする半導体用樹脂ペースト。 【化1】 1. A liquid epoxy resin wherein the weight ratio of the liquid epoxy resin represented by the general formula (1) to the reactive diluent having an epoxy group is 50:50 to 90:10.
(B) phenol curing agent, (C) latent curing agent, (D)
A curing accelerator, which is a tertiary amine or a salt thereof, and an inorganic filler (E) are essential components, and 10 to 30 parts by weight of component (B) and 0 to 100 parts by weight of component (A). 0.5 to 5 parts by weight, and the components (A), (B) and (C)
Component (D) is 0.1 to 10 parts by weight based on 100 parts by weight of
A resin paste for semiconductors, which is in parts by weight. Embedded image
Priority Applications (1)
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JP20747197A JP3568742B2 (en) | 1997-08-01 | 1997-08-01 | Resin paste for semiconductor |
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JP20747197A JP3568742B2 (en) | 1997-08-01 | 1997-08-01 | Resin paste for semiconductor |
Publications (2)
Publication Number | Publication Date |
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JPH1149841A true JPH1149841A (en) | 1999-02-23 |
JP3568742B2 JP3568742B2 (en) | 2004-09-22 |
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ID=16540318
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1149842A (en) * | 1997-08-05 | 1999-02-23 | Sumitomo Bakelite Co Ltd | Resin paste for semiconductor |
JPH1149843A (en) * | 1997-08-05 | 1999-02-23 | Sumitomo Bakelite Co Ltd | Resin paste for semiconductor |
JP2001106767A (en) * | 1999-10-07 | 2001-04-17 | Sumitomo Bakelite Co Ltd | Resin paste for semiconductor and semiconductor device using the same |
CN114656912A (en) * | 2022-04-08 | 2022-06-24 | 韦尔通(厦门)科技股份有限公司 | Conductive adhesive composition for electronic product and preparation method thereof |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6227419A (en) * | 1985-07-26 | 1987-02-05 | Shin Kobe Electric Mach Co Ltd | Resin composition for flame-retarding laminated sheet |
JPS636015A (en) * | 1986-06-26 | 1988-01-12 | Shin Kobe Electric Mach Co Ltd | Production of flame-retarding resin composition for laminate |
JPH06207152A (en) * | 1992-10-02 | 1994-07-26 | W R Grace & Co | Low-viscosity solventless one-pack epoxy resin adhesive composition |
-
1997
- 1997-08-01 JP JP20747197A patent/JP3568742B2/en not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6227419A (en) * | 1985-07-26 | 1987-02-05 | Shin Kobe Electric Mach Co Ltd | Resin composition for flame-retarding laminated sheet |
JPS636015A (en) * | 1986-06-26 | 1988-01-12 | Shin Kobe Electric Mach Co Ltd | Production of flame-retarding resin composition for laminate |
JPH06207152A (en) * | 1992-10-02 | 1994-07-26 | W R Grace & Co | Low-viscosity solventless one-pack epoxy resin adhesive composition |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1149842A (en) * | 1997-08-05 | 1999-02-23 | Sumitomo Bakelite Co Ltd | Resin paste for semiconductor |
JPH1149843A (en) * | 1997-08-05 | 1999-02-23 | Sumitomo Bakelite Co Ltd | Resin paste for semiconductor |
JP2001106767A (en) * | 1999-10-07 | 2001-04-17 | Sumitomo Bakelite Co Ltd | Resin paste for semiconductor and semiconductor device using the same |
CN114656912A (en) * | 2022-04-08 | 2022-06-24 | 韦尔通(厦门)科技股份有限公司 | Conductive adhesive composition for electronic product and preparation method thereof |
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