JPH0933905A - Heat treatment device for glass substrate for liquid crystal - Google Patents

Heat treatment device for glass substrate for liquid crystal

Info

Publication number
JPH0933905A
JPH0933905A JP18922195A JP18922195A JPH0933905A JP H0933905 A JPH0933905 A JP H0933905A JP 18922195 A JP18922195 A JP 18922195A JP 18922195 A JP18922195 A JP 18922195A JP H0933905 A JPH0933905 A JP H0933905A
Authority
JP
Japan
Prior art keywords
glass substrate
plate
hot
cavity
hot plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18922195A
Other languages
Japanese (ja)
Inventor
Hidefumi Tsuboi
秀文 坪井
Chuji Sato
忠次 佐藤
Makoto Saito
斎藤  誠
Masao Fukutome
真佐夫 福留
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Chemical Techno Plant Ltd
Resonac Corp
Original Assignee
Hitachi Chemical Co Ltd
Hitachi Chemical Techno Plant Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Chemical Co Ltd, Hitachi Chemical Techno Plant Ltd filed Critical Hitachi Chemical Co Ltd
Priority to JP18922195A priority Critical patent/JPH0933905A/en
Publication of JPH0933905A publication Critical patent/JPH0933905A/en
Pending legal-status Critical Current

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  • Liquid Crystal (AREA)
  • Surface Heating Bodies (AREA)

Abstract

PROBLEM TO BE SOLVED: To make a device, which thermally treats materials applied to a glass substrate for liquid crystal display for various purposes, compact and make the temperature distribution uniform by improving temperature raising and cooling characteristics. SOLUTION: A cavity part 4 is provided with an entrance part 2 and an exit part 3 for the glass substrate 16, and a single or a plurality of hot plates 5 for a temperature raising part 7, a plurality of hot plates 5 for a soaking part 8, and a plurality of hot plates 5 for a cooling part 9, and a cold plate 21 are provided in this order on the internal bottom surface of the cavity part 4 from the entrance part 2 to the exit part 3; and each hot plate 5 has a pin 13 stood on its top surface and a plurality of reflecting plates 6 are installed on the internal top surface of the opposite cavity part 4. Then the heat treatment device has the single wafer type conveying mechanism which support one glass substrate 16 with plural metal supporters 14 that can move vertically and horizontally and to the right and left and remounts and convey the respective hot plates 5 and cold plate 21 in order.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】本発明は、ポリイミド膜、ト
ップコート膜及びシール剤等を塗布した後の液晶用ガラ
ス基板の熱処理装置に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a heat treatment apparatus for a glass substrate for liquid crystal after applying a polyimide film, a top coat film, a sealant and the like.

【0002】[0002]

【従来の技術】ポリイミド膜、トップコート膜及びシー
ル剤等を塗布した後の液晶用ガラス基板の熱処理装置
は、設定温度や処理時間に程度の差はあるが、何れの場
合も概ね基本構造は次に述べるようなものとなってい
る。
2. Description of the Related Art In a heat treatment apparatus for a glass substrate for liquid crystal after applying a polyimide film, a top coat film, a sealing agent, etc., there is a difference in setting temperature and processing time. It is as described below.

【0003】即ち、図5、図6を用いて説明すると、熱
処理装置本体1の一方に入口部2が、入口部2と対向す
る他方に出口部3が設けられ、トンネル状の空洞部4が
形成されている。入口部2から出口部3に向かって空洞
部4内部の下面に、複数枚の昇温部7用ホットプレート
5、複数枚の均熱部8用ホットプレート5、複数枚の冷
却部9用ホットプレート5及びコールドプレート21が
順次1列に並べられ、前記各ホットプレート5に対向し
た上面に複数枚の反射板6がそれぞれ設置されている。
尚、ホットプレート5と反射板6間の距離はガラス基板
16を移動させることを考え15乃至30mmとするこ
とが多い。
That is, referring to FIGS. 5 and 6, an inlet portion 2 is provided on one side of the heat treatment apparatus main body 1 and an outlet portion 3 is provided on the other side facing the inlet portion 2, and a tunnel-shaped cavity portion 4 is provided. Has been formed. A plurality of hot plates 5 for the temperature raising part 7, a plurality of hot plates 5 for the soaking part 8, and a plurality of hot parts for the cooling part 9 are provided on the lower surface inside the cavity 4 from the inlet part 2 toward the outlet part 3. The plate 5 and the cold plate 21 are sequentially arranged in a line, and a plurality of reflecting plates 6 are installed on the upper surface facing each hot plate 5.
The distance between the hot plate 5 and the reflection plate 6 is often set to 15 to 30 mm in consideration of moving the glass substrate 16.

【0004】搬送機構は、駆動モータ10により搬送駆
動部11を上下前後左右に駆動し、前記搬送駆動部11
に連結されたビームサポート15によって搬送ビーム1
2に動きを伝え、搬送ビーム12に設置された各4本の
支持金具14によって1枚づつガラス基板16を支持し
ながら搬送し、一定時間だけホットプレート5上部に設
けられたピン13に載せ、一定時間経過後順次載せ変え
て搬送できる枚葉式のものが設けられている。
The transport mechanism drives the transport drive unit 11 in the vertical and horizontal directions by the drive motor 10, and the transport drive unit 11 is driven.
The carrier beam 1 by means of a beam support 15 connected to
2, the glass substrates 16 are transported one by one while being supported by the four support fittings 14 installed on the transport beam 12, and placed on the pins 13 provided on the upper part of the hot plate 5 for a certain period of time. A single-wafer type is provided that can be sequentially transferred and transferred after a lapse of a certain time.

【0005】また、昇温部7用ホットプレート5と均熱
部8用ホットプレート5には、それぞれ温度センサ(図
示せず)とヒータ(図示せず)が組み込まれており、設
定温度になるようにヒータをON−OFF制御してい
る。冷却部9用ホットプレート5には、温度センサ(図
示せず)とヒータ(図示せず)及び冷却管(図示せず)
が組み込まれており、設定温度になるようにヒータをO
N−OFF制御すると共に、冷却管(図示せず)の制御
弁(図示せず)の開閉を行なっている。冷却部9用コー
ルドプレート18には、常時常温水が通水されている。
Further, a temperature sensor (not shown) and a heater (not shown) are incorporated in the hot plate 5 for the temperature raising section 7 and the hot plate 5 for the soaking section 8, respectively, to reach the set temperature. The heater is ON-OFF controlled as described above. The hot plate 5 for the cooling unit 9 includes a temperature sensor (not shown), a heater (not shown), and a cooling pipe (not shown).
Is installed and the heater is turned on so that the set temperature is reached.
In addition to N-OFF control, a control valve (not shown) of a cooling pipe (not shown) is opened and closed. Room temperature water is always passed through the cold plate 18 for the cooling unit 9.

【0006】[0006]

【発明が解決しようとする課題】近年の液晶ディスプレ
イは、情報、OA、家電、AV、及び計測装置等に応用
分野が広がっており、これに伴い、低コストで大画面の
液晶ディスプレイが必要となってきている。更には、液
晶用ガラス基板の熱処理装置として、温度分布の均一
化、コンパクト化が要求されるようになってきている。
In recent years, liquid crystal displays have been applied to various fields such as information, OA, home appliances, AV, and measuring devices, and accordingly, low cost and large screen liquid crystal displays are required. It has become to. Furthermore, as a heat treatment apparatus for glass substrates for liquid crystals, there is a demand for uniform temperature distribution and compactness.

【0007】しかし、前述した図5、図6に示すような
従来の液晶用ガラス基板の熱処理装置では、多数のホッ
トプレート5及びコールドプレート21を順次1列に並
べて構成されるため、熱処理装置本体1の全長が長くな
り、設置面積が大きくなるという問題がある。また、ホ
ットプレート5の枚数を減らすことにより全長を短縮す
ることは可能ではあるが、各ホットプレート5に停止さ
せる時間が長くなり生産性が悪化してしまう。
However, in the conventional heat treatment apparatus for a glass substrate for liquid crystal as shown in FIGS. 5 and 6, since a large number of hot plates 5 and cold plates 21 are sequentially arranged in one row, the heat treatment apparatus main body is formed. There is a problem that the total length of 1 becomes long and the installation area becomes large. Although it is possible to reduce the total length by reducing the number of hot plates 5, the time for stopping each hot plate 5 becomes long and the productivity deteriorates.

【0008】更に、各ホットプレート5上面に設けられ
たピン13の高さは通常1mmと非常に低いもので、ホ
ットプレート5と反射板6間の距離(25mmとする)
の1/25と小さくなっている。そのため、昇温部7で
はホットプレート5からガラス基板16への自然対流熱
伝達量が、反射板6からガラス基板16への自然対流熱
伝達量よりも遥かに大きくなる。冷却部9では、ガラス
基板16からホットプレート5への自然対流熱伝達量
が、ガラス基板16から反射板6への自然対流熱伝達量
よりも遥かに大きくなる。その結果、昇温部7と冷却部
9ではガラス基板16の上下面の温度差が大きくなって
歪みが発生する。均熱部8と隣接する冷却部9の反射板
6は、均熱部8から自然対流熱伝達によって加熱され、
対向するホットプレート5上面の温度より高くなるた
め、ガラス基板16の上下面の温度差が大きくなって歪
みが発生する。
Further, the height of the pin 13 provided on the upper surface of each hot plate 5 is usually as low as 1 mm, and the distance between the hot plate 5 and the reflection plate 6 (25 mm).
It is as small as 1/25. Therefore, in the temperature raising unit 7, the amount of natural convection heat transfer from the hot plate 5 to the glass substrate 16 is much larger than the amount of natural convection heat transfer from the reflection plate 6 to the glass substrate 16. In the cooling unit 9, the amount of natural convection heat transfer from the glass substrate 16 to the hot plate 5 is much larger than the amount of natural convection heat transfer from the glass substrate 16 to the reflector plate 6. As a result, the temperature difference between the upper and lower surfaces of the glass substrate 16 in the temperature raising section 7 and the cooling section 9 becomes large and distortion occurs. The reflection plate 6 of the cooling unit 9 adjacent to the soaking unit 8 is heated by natural convection heat transfer from the soaking unit 8,
Since the temperature becomes higher than the temperature of the upper surface of the hot plate 5 which faces, the temperature difference between the upper and lower surfaces of the glass substrate 16 becomes large and distortion occurs.

【0009】本発明は、前記問題点を鑑み、昇温及び冷
却特性に優れ、コンパクトで温度分布が均一な液晶用ガ
ラス基板の熱処理装置を提供することを目的としてい
る。
In view of the above problems, it is an object of the present invention to provide a heat treatment device for a glass substrate for liquid crystal, which is excellent in temperature rising and cooling characteristics, is compact, and has a uniform temperature distribution.

【0010】[0010]

【課題を解決するための手段】本発明は、ガラス基板1
6の入口部2と出口部3とを設けた空洞部4を設け、前
記空洞部4の内部下面に入口部2から出口部3へ向い単
数又は複数枚の昇温部7用ホットプレート5、複数枚の
均熱部8用ホットプレート5、複数枚の冷却部9用ホッ
トプレート5、コールドプレート21をこの順に設け、
前記各ホットプレート5にはその上面にピン13を立設
し、対向した空洞部4の内部上面に複数枚の反射板6を
それぞれ設置すると共に、上下前後左右に可動する複数
本の支持金具14で1枚のガラス基板16を支持し前記
各ホットプレート5及びコールドプレート21に順次載
せ変えて搬送する枚葉式の搬送機構を有する熱処理装置
であって、前記空洞部4を鉛直方向に複数段積み重ね、
熱処理装置の下部に設けた駆動モータ10で搬送駆動部
11を上下前後左右に駆動し、搬送駆動部11に連結さ
れたビームサポート15により各空洞部4にそれぞれ設
けられた搬送ビーム12に動きを伝え、各搬送ビーム1
2に設置された各複数本の支持金具14で一枚ずつガラ
ス基板16を支持しながら各空洞部4を同時に搬送する
ことを特徴としている。
The present invention provides a glass substrate 1
6, a cavity portion 4 having an inlet portion 2 and an outlet portion 3 is provided, and one or a plurality of hot plates 5 for the temperature raising portion 7 facing the inlet portion 2 to the outlet portion 3 are provided on the inner lower surface of the cavity portion 4. A plurality of hot plates 5 for the soaking section 8, a plurality of hot plates 5 for the cooling section 9, and a cold plate 21 are provided in this order,
A pin 13 is provided upright on the upper surface of each hot plate 5, a plurality of reflecting plates 6 are installed on the inner upper surfaces of the facing cavity portions 4, respectively, and a plurality of supporting metal fittings 14 that can move vertically, horizontally and horizontally. A heat treatment apparatus having a single-wafer-type transfer mechanism for supporting one glass substrate 16 by means of and transferring it to each of the hot plate 5 and cold plate 21 one by one and transporting the hollow part 4 in a plurality of stages in the vertical direction. Stacking,
The drive motor 10 provided in the lower part of the heat treatment apparatus drives the transport drive unit 11 vertically and horizontally and horizontally, and the beam support 15 connected to the transport drive unit 11 moves the transport beams 12 provided in the respective hollow portions 4. Tell, each carrier beam 1
It is characterized in that each of the hollow portions 4 is simultaneously conveyed while the glass substrates 16 are supported one by one by each of the plurality of support fittings 14 installed in 2.

【0011】[0011]

【発明の実施の形態】本発明の構成を対応する図1乃至
4を用いて説明すると、ガラス基板16の入口部2と出
口部3とを設けたトンネル状の空洞部4を有し、入口部
2から出口部3に向かって空洞部4内部の下面に複数枚
の昇温部7用ホットプレート5、複数枚の均熱部8用ホ
ットプレート5、複数枚の冷却部9用ホットプレート5
を順次設け、ホットプレート5に対向した空洞部4上面
に複数枚の反射板6をそれぞれ設置している。トンネル
状の空洞部4は、複数段(図では3段)積み重ねると共
に、熱処理装置本体1の下部に設けた駆動モータ10に
より搬送駆動部11を上下前後左右に駆動し、搬送駆動
部11に連結されたビームサポート15により各空洞部
4にそれぞれ設けられた搬送ビーム12に動きを伝え、
各搬送ビーム12に設置された各複数本の支持金具14
で1枚ずつガラス基板16を支持しながら各空洞部4を
同時に搬送し、一定時間だけホットプレート5上面に設
けられたピン13に載せ、一定時間後、順次載せ変えて
搬送できる枚葉式の搬送装置を設けた。各ホットプレー
ト5上面に設けられたピン13の高さをホットプレート
5と反射板6間の距離の1/5から1/2とし、隣接す
る均熱部8用反射板6と冷却部9用反射板6の間に仕切
板17を設けた。
BEST MODE FOR CARRYING OUT THE INVENTION The structure of the present invention will be described with reference to the corresponding FIGS. 1 to 4. The glass substrate 16 has a tunnel-shaped cavity 4 provided with an inlet 2 and an outlet 3, A plurality of hot plates 5 for the temperature raising part 7, a plurality of hot plates 5 for the soaking part 8, and a plurality of hot plates 5 for the cooling part 9 are provided on the lower surface inside the cavity 4 from the part 2 toward the outlet part 3.
Are sequentially provided, and a plurality of reflectors 6 are installed on the upper surface of the cavity 4 facing the hot plate 5, respectively. The tunnel-shaped cavities 4 are stacked in a plurality of stages (three stages in the figure), and the drive motor 10 provided at the lower portion of the heat treatment apparatus main body 1 drives the transport drive unit 11 vertically and horizontally and horizontally to connect the transport drive unit 11. The movement of the beam support 15 is transmitted to the carrier beam 12 provided in each cavity 4,
A plurality of support fittings 14 installed on each carrier beam 12
Each of the cavities 4 is simultaneously conveyed while supporting the glass substrate 16 one by one, and is placed on the pin 13 provided on the upper surface of the hot plate 5 for a certain period of time, and after a certain period of time, the sheets are sequentially remounted and conveyed. A transport device was provided. The height of the pin 13 provided on the upper surface of each hot plate 5 is set to ⅕ to ½ of the distance between the hot plate 5 and the reflection plate 6, and the reflection plate 6 and the cooling unit 9 for the adjacent heat equalizing unit 8 and A partition plate 17 is provided between the reflection plates 6.

【0012】また、昇温部7用ホットプレート5及び均
熱部8用ホットプレート5には、それぞれ従来技術で述
べたように、温度センサとヒータが組み込まれており設
定温度を保つように制御されている。また、冷却部9用
ホットプレート5にも温度センサとヒータは組み込まれ
ており、更に冷却管も組み込まれ温度制御がなされてい
る。基本的には、冷却部9用ホットプレート5にもヒー
タさえあれば温度制御が可能ではあるが、隣接するより
高い温度のプレートからの熱により設定温度より高い温
度になる可能性があり、それを防ぐ目的で冷却管が設け
られている。
Further, as described in the prior art, the hot plate 5 for the temperature raising section 7 and the hot plate 5 for the soaking section 8 each have a temperature sensor and a heater incorporated therein, and are controlled so as to maintain the set temperature. Has been done. Further, a temperature sensor and a heater are also incorporated in the hot plate 5 for the cooling unit 9, and a cooling pipe is also incorporated for temperature control. Basically, it is possible to control the temperature if the hot plate 5 for the cooling unit 9 also has a heater, but there is a possibility that the temperature will be higher than the set temperature due to the heat from the adjacent higher temperature plate. A cooling pipe is provided to prevent this.

【0013】[0013]

【作用】本発明によれば、トンネル状の空洞部4を複数
段積み重ねたので、ホットプレート5上面に設けられた
ピン13に載せる時間を生産性を落すことなく長くする
ことが可能となる。
According to the present invention, since a plurality of tunnel-shaped cavities 4 are stacked in a plurality of stages, it is possible to prolong the time for mounting on the pins 13 provided on the upper surface of the hot plate 5 without lowering the productivity.

【0014】また、熱処理装置本体1の下部に設けた駆
動モータ10で搬送駆動部11を上下前後左右に駆動
し、搬送駆動部11に連結されたビームサポート15に
より各空洞部4にそれぞれ設けられた搬送ビーム12に
動きを伝え、各搬送ビーム12に設置された各複数本の
支持金具14で1枚ずつガラス基板16を支持しながら
各空洞部4を同時に搬送し、一定時間だけホットプレー
ト5上面に設けられたピン13に載せ、一定時間後、順
次載せ変えて搬送できる枚葉式の搬送機構を設け、発塵
の可能性がある駆動部分を全て熱処理装置本体1の下部
に収納したので、各空洞部4では発塵がない。
The drive motor 10 provided at the bottom of the heat treatment apparatus main body 1 drives the transport drive unit 11 vertically and horizontally and horizontally, and the beam support 15 connected to the transport drive unit 11 is provided in each cavity 4. The plurality of support fittings 14 installed on each of the carrier beams 12 simultaneously convey the movements to the respective carrier beams 12, and simultaneously convey the respective cavity portions 4 while supporting the glass substrates 16 one by one. Since a single-wafer-type transfer mechanism is provided that can be placed on the pin 13 provided on the upper surface, and after a certain period of time, re-placed and transferred, all the drive parts that may generate dust are stored under the heat treatment apparatus main body 1. No dust is generated in each cavity 4.

【0015】各ホットプレート5上面に設けられたピン
13の高さをホットプレート5と反射板6間の距離の1
/5から1/2にしたことによっては、ホットプレート
5からの自然対流と反射板6からの自然対流との熱伝達
量差を抑制することが可能となり、ガラス基板16の歪
みを小さく抑えることが可能となる。そのため昇温部7
と冷却部9のホットプレート5の枚数を少なくしてもガ
ラス基板16の破損がない。
The height of the pin 13 provided on the upper surface of each hot plate 5 is set to be 1 of the distance between the hot plate 5 and the reflection plate 6.
By changing the ratio from / 5 to 1/2, it is possible to suppress the difference in heat transfer amount between the natural convection from the hot plate 5 and the natural convection from the reflection plate 6, and suppress the distortion of the glass substrate 16 to a small level. Is possible. Therefore, the temperature raising unit 7
Even if the number of hot plates 5 in the cooling unit 9 is reduced, the glass substrate 16 is not damaged.

【0016】更に、隣接する均熱部8用反射板6と冷却
部9用反射板6の間に仕切板17を設けたので、均熱部
8と隣接する冷却部9の反射板6が、均熱部8から自然
対流熱伝達によって加熱するのを防ぐことが可能となる
ので、ガラス基板16の歪みを抑えることが可能とな
る。
Further, since the partition plate 17 is provided between the reflecting plate 6 for the uniform heating section 8 and the reflecting plate 6 for the cooling section 9 which are adjacent to each other, the reflecting plate 6 of the cooling section 9 adjacent to the uniform heating section 8 is Since it is possible to prevent heating from the heat equalizing section 8 by natural convection heat transfer, it is possible to suppress distortion of the glass substrate 16.

【0017】[0017]

【実施例】次に本発明の実施例を説明する。本発明の1
実施例を図1乃至4を用いて説明すると、前述したよう
に熱処理装置本体1にガラス基板16の入口部2と出口
部3を設け、トンネル状の空洞部4を形成し、前記空洞
部4を3段積み重ねた。各空洞部4の入口部2から出口
部3に向かって空洞部4内部下面には、1枚の昇温部7
用ホットプレート5、2枚の均熱部8用ホットプレート
5、2枚の冷却部9用ホットプレート5及び1枚のコー
ルドプレート21を順次設けた。
Next, embodiments of the present invention will be described. 1 of the present invention
An embodiment will be described with reference to FIGS. 1 to 4. As described above, the heat treatment apparatus main body 1 is provided with the inlet portion 2 and the outlet portion 3 of the glass substrate 16, the tunnel-shaped cavity portion 4 is formed, and the cavity portion 4 is formed. Were stacked in three layers. From the inlet 2 to the outlet 3 of each cavity 4, a single temperature raising portion 7 is provided on the lower surface inside the cavity 4.
Hot plate 5, two hot plates 5 for soaking part 8, two hot plates 5 for cooling part 9, and one cold plate 21 were sequentially provided.

【0018】昇温部7用ホットプレート5及び均熱部8
用ホットプレート5には、それぞれ温度センサ(図示せ
ず)とヒータ(図示せず)が組み込まれており、設定温
度になるよう制御している。冷却部9用ホットプレート
5には、前記温度センサ、ヒータ以外に冷却管(図示せ
ず)が組み込まれており、冷却管の制御弁開閉による制
御を行なっている。コールドプレート18には常時常温
水が通水されている。
Hot plate 5 for temperature raising section 7 and soaking section 8
Each hot plate 5 has a temperature sensor (not shown) and a heater (not shown) incorporated therein to control the temperature to a preset temperature. In addition to the temperature sensor and the heater, a cooling pipe (not shown) is incorporated in the hot plate 5 for the cooling unit 9, and control is performed by opening and closing the control valve of the cooling pipe. Room temperature water is always passed through the cold plate 18.

【0019】各ホットプレート5の設定温度は、昇温部
7では常温より高く且つ均熱部より低く設定され、均熱
部8では2枚とも同じ温度に設定されている。冷却部9
では、入口部2から順に温度が低くなるように設定され
ている。
The set temperature of each hot plate 5 is set to be higher than normal temperature and lower than the soaking section in the temperature raising section 7, and the same temperature is set in both soaking sections in the soaking section 8. Cooling unit 9
Then, the temperature is set to decrease in order from the inlet 2.

【0020】搬送機構は、前述した枚葉式であり、駆動
モータ10で搬送駆動部11を上下前後左右に駆動し、
搬送駆動部11に連結されたビームサポート15により
各空洞部4にそれぞれ設けられた搬送ビーム12に動き
を伝え、各搬送ビーム12に設置された各4本の支持金
具14で1枚ずつガラス基板16を支持しながら各空洞
部4を同時に搬送し、一定時間だけホットプレート5上
面に設けられたピン13に載せ、一定時間後、順次載せ
変えている。
The transport mechanism is the above-mentioned single-wafer type, and the drive motor 10 drives the transport drive section 11 vertically and horizontally and
A beam support 15 connected to the transport driving unit 11 conveys a movement to the transport beams 12 provided in the respective hollow portions 4, and one glass substrate is attached to each of the four support fittings 14 installed in each transport beam 12. The respective hollow portions 4 are simultaneously conveyed while supporting 16, and are placed on the pins 13 provided on the upper surface of the hot plate 5 for a certain period of time, and after a certain period of time, they are sequentially reloaded.

【0021】また、各空洞部4の各ホットプレート5に
対向した上面にホットプレート5との距離が25mmと
なるように、6枚の反射板6をそれぞれ設置した。更
に、各ホットプレート5の上面には直径2mm、高さ5
mmの5本のピン13をそれぞれ設けた。そして、隣接
する均熱部8用反射板6と冷却部9用反射板6の間には
仕切板17が設けられている。
Further, six reflection plates 6 were installed on the upper surface of each cavity 4 facing the hot plates 5 so that the distance from the hot plates 5 was 25 mm. Furthermore, the upper surface of each hot plate 5 has a diameter of 2 mm and a height of 5 mm.
Five 5 mm pins 13 are provided respectively. A partition plate 17 is provided between the reflection plate 6 for the soaking section 8 and the reflection plate 6 for the cooling section 9 which are adjacent to each other.

【0022】タクトタイム60秒で液晶用ガラス基板の
熱処理を行なった結果、発塵がなく、温度分布の均一化
が図れ、ガラス基板16の表面に塗布されたポリイミド
膜、トップコート膜及びシール剤に焼けむらは発生しな
かった。また、熱処理装置本体1の設置面積を従来の熱
処理装置の60パーセントに抑えることができ、コンパ
クト化が図れた。なお、本実施例では、タクトタイムを
60秒、ホットプレート5の枚数を各段6枚としたが、
本件特許はこれに限定されるものではない。
As a result of heat-treating the liquid crystal glass substrate with a takt time of 60 seconds, no dust is generated and the temperature distribution can be made uniform, and the polyimide film, the top coat film and the sealant applied on the surface of the glass substrate 16 are obtained. Burnt spots did not occur. Further, the installation area of the heat treatment apparatus main body 1 can be suppressed to 60% of that of the conventional heat treatment apparatus, and the size can be reduced. In this embodiment, the tact time is 60 seconds and the number of hot plates 5 is 6 in each stage.
The present patent is not limited to this.

【0023】[0023]

【発明の効果】本発明は、トンネル状の空洞部を複数段
積み重ねたので、空洞部1段当りの均熱部用のホットプ
レート枚数を少なくすることができる。また、発塵の可
能性のある駆動部分を全て熱処理装置本体の下部に収納
し、ガラス基板を支持しながら各空洞部を同時に搬送す
るようにしたので、各空洞部では発塵するものがない。
According to the present invention, since a plurality of tunnel-shaped hollow portions are stacked, it is possible to reduce the number of hot plates for the soaking section per one hollow portion. In addition, since all the drive parts that may generate dust are stored in the lower part of the heat treatment apparatus main body and each cavity is conveyed simultaneously while supporting the glass substrate, there is no dust in each cavity. .

【0024】更に、各ホットプレート上面に設けられた
ピンの高さをホットプレートと反射板間の距離の1/5
から1/2とし、隣接する均熱部用反射板と冷却部用反
射板の間に仕切板を設けたので、昇温部や冷却部でガラ
ス基板の上下面の温度差が大きくなり歪みを発生するこ
とがない。従って、本発明によれば液晶用ガラス基板の
熱処理装置の低発塵化と共にコンパクト化を図ることが
可能となる。
Further, the height of the pin provided on the upper surface of each hot plate is ⅕ of the distance between the hot plate and the reflector.
Since the partition plate is provided between the reflection plate for the soaking section and the reflection plate for the cooling section, the temperature difference between the upper and lower surfaces of the glass substrate becomes large in the temperature raising section and the cooling section, which causes distortion. Never. Therefore, according to the present invention, it is possible to reduce the dust generation and the size of the heat treatment apparatus for the glass substrate for liquid crystal.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の実施例による、液晶用ガラス基板の熱
処理装置要部断面図である。
FIG. 1 is a cross-sectional view of essential parts of a heat treatment apparatus for a glass substrate for liquid crystal according to an embodiment of the present invention.

【図2】図1に示す装置の拡大図である。FIG. 2 is an enlarged view of the device shown in FIG.

【図3】図1に示すA−A断面図である。FIG. 3 is a sectional view taken along line AA shown in FIG. 1;

【図4】図3に示す装置の拡大図である。FIG. 4 is an enlarged view of the device shown in FIG.

【図5】従来の実施例による、液晶用ガラス基板の熱処
理装置要部断面図である。
FIG. 5 is a cross-sectional view of essential parts of a heat treatment apparatus for a glass substrate for liquid crystal according to a conventional example.

【図6】図5に示すA−A断面図である。FIG. 6 is a sectional view taken along line AA of FIG.

【符号の説明】[Explanation of symbols]

1.熱処理装置本体 2.入口部 3.出口部
4.空洞部 5.ホットプレート 6.反射板
7.昇温部 8.均熱部 9.冷却部 10.駆
動モータ 11.搬送駆動部 12.搬送ビーム
13.ピン 14.支持金具 15.ビームサポート 16.ガ
ラス基板 17.仕切板 18.搬入ロボット
19.搬入ロボット 20コロコンベア 21.コ
ールドプレート
1. Heat treatment equipment body 2. Entrance 3. Exit
4. Cavity 5. Hot plate 6. reflector
7. Temperature raising unit 8. Soaking part 9. Cooling unit 10. Drive motor 11. Transport drive unit 12. Carrier beam
13. Pin 14. Support bracket 15. Beam support 16. Glass substrate 17. Partition plate 18. Carry-in robot
19. Carry-in robot 20 Roller conveyor 21. Cold plate

フロントページの続き (72)発明者 斎藤 誠 東京都千代田区神田駿河台三丁目1番地2 日立化成テクノプラント株式会社内 (72)発明者 福留 真佐夫 東京都千代田区神田駿河台三丁目1番地2 日立化成テクノプラント株式会社内Front page continuation (72) Inventor Makoto Saito 3-1-1 Kanda Surugadai, Chiyoda-ku, Tokyo 2 Inside Hitachi Chemical Techno Plant Co., Ltd. (72) Inventor Masao Fukudome 3-1-2 Kanda Surugadai, Chiyoda-ku, Tokyo Hitachi Chemical Inside Techno Plant Co., Ltd.

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 ガラス基板の入口部と出口部とを設けた
空洞部を設け、前記空洞部の内部下面に入口部から出口
部へ向い単数又は複数枚の昇温部用ホットプレート、複
数枚の均熱部用ホットプレート、複数枚の冷却部用ホッ
トプレート、コールドプレートをこの順に設け、前記各
ホットプレートにはその上面にピンを立設し、対向した
空洞部の内部上面に複数枚の反射板をそれぞれ設置する
と共に、上下前後左右に可動する複数本の支持金具で1
枚のガラス基板を支持し前記各ホットプレート及びコー
ルドプレートに順次載せ変えて搬送する枚葉式の搬送機
構を有する熱処理装置であって、前記空洞部を鉛直方向
に複数段積み重ね、熱処理装置の下部に設けた駆動モー
タで搬送駆動部を上下前後左右に駆動し、搬送駆動部に
連結されたビームサポートにより各空洞部にそれぞれ設
けられた搬送ビームに動きを伝え、各搬送ビームに設置
された各複数本の支持金具で一枚ずつガラス基板を支持
しながら各空洞部を同時に搬送することを特徴とする液
晶用ガラス基板の熱処理装置。
1. A glass substrate is provided with a cavity portion having an inlet portion and an outlet portion, and one or a plurality of hot plates for temperature raising portions facing the inlet portion to the outlet portion are provided on the inner lower surface of the cavity portion, and a plurality of hot plates are provided. A hot plate for soaking section, a plurality of hot plates for cooling section, and a cold plate are provided in this order, and pins are provided upright on the upper surface of each hot plate, and a plurality of sheets are provided on the inner upper surface of the facing cavity. Along with the installation of each reflector, it is possible to use multiple support brackets that can move up, down, front, back, left and right.
What is claimed is: 1. A heat treatment apparatus having a single-wafer-type conveyance mechanism for supporting and transporting a plurality of glass substrates to the hot plates and cold plates one by one, and stacking the cavities in a plurality of stages in the vertical direction, The drive motor installed in the drive section drives the transport drive section up, down, front, back, left, and right, and the beam support connected to the transport drive section conveys the movement to the transport beam provided in each cavity, and An apparatus for heat treating a glass substrate for liquid crystal, wherein each cavity is simultaneously conveyed while supporting a glass substrate one by one with a plurality of support fittings.
【請求項2】 各ホットプレート上面に設けられたピン
の高さがホットプレートと反射板間の距離の1/5から
1/2であることを特徴とする請求項1記載の液晶用ガ
ラス基板の熱処理装置。
2. The glass substrate for liquid crystal according to claim 1, wherein the height of the pin provided on the upper surface of each hot plate is 1/5 to 1/2 of the distance between the hot plate and the reflector. Heat treatment equipment.
【請求項3】 隣接する均熱部用ホットプレートに対向
する反射板と冷却部用ホットプレートに対向する反射板
との間に仕切板を設けたことを特徴とする請求項1又は
2記載の液晶用ガラス基板の熱処理装置。
3. The partition plate is provided between the reflector plate facing the hot plate for the uniform heating portion and the reflector plate facing the hot plate for the cooling portion, which are adjacent to each other. Heat treatment equipment for glass substrates for liquid crystals.
JP18922195A 1995-07-25 1995-07-25 Heat treatment device for glass substrate for liquid crystal Pending JPH0933905A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18922195A JPH0933905A (en) 1995-07-25 1995-07-25 Heat treatment device for glass substrate for liquid crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18922195A JPH0933905A (en) 1995-07-25 1995-07-25 Heat treatment device for glass substrate for liquid crystal

Publications (1)

Publication Number Publication Date
JPH0933905A true JPH0933905A (en) 1997-02-07

Family

ID=16237604

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18922195A Pending JPH0933905A (en) 1995-07-25 1995-07-25 Heat treatment device for glass substrate for liquid crystal

Country Status (1)

Country Link
JP (1) JPH0933905A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105044951A (en) * 2015-08-18 2015-11-11 昆山龙腾光电有限公司 Substrate assembly method
CN111095542A (en) * 2017-09-25 2020-05-01 索尼半导体解决方案公司 Semiconductor device with a plurality of semiconductor chips

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105044951A (en) * 2015-08-18 2015-11-11 昆山龙腾光电有限公司 Substrate assembly method
CN105044951B (en) * 2015-08-18 2018-01-16 昆山龙腾光电有限公司 Substrate method for assembling
CN111095542A (en) * 2017-09-25 2020-05-01 索尼半导体解决方案公司 Semiconductor device with a plurality of semiconductor chips

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