JPH09219418A - Semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor device which solves problems such as crack, bending and disconnection of a lead caused by reduction of lead width and thickness when an inner lead pitch is fined and has a narrow pitch inner lead pattern corresponding to narrow pitch multi-electrode of a semiconductor chip in a semiconductor device of a TAB mounting method. SOLUTION: A projection electrode 2 and an inner lead part 3 are connected by applying insulation resin 7 holding adhesion force and contraction stress after setting between a semiconductor chip 1 and a tape carrier of the inner lead part 3 without opening a part of a base film 4 of the inner lead part 3 of a tape carrier connected to the projection electrode 2 of the semiconductor chip 1. Thereby, a conductor wiring material which is thinner than a conventional one can be used for a tape carrier and the inner lead part 3 can be fined for a narrow pitch corresponding to its thickness.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device used for a CPU, a gate array, various controllers, drivers and the like.

[0002]

2. Description of the Related Art In recent years, electrodes of semiconductor chips for semiconductor devices used for CPUs, gate arrays, various controllers, drivers, etc. are strongly required to have a narrow pitch and have a large number of electrodes, and wires are the mainstream of conventional semiconductor packaging. The one that exceeds the limit of the bonding method is T by the tape carrier.
The AB mounting method is used.

A semiconductor device according to a conventional TAB mounting method will be described below with reference to the drawings.

FIG. 3 is a cross-sectional view showing a structure of a semiconductor device according to a conventional TAB mounting method. In FIG. 3, 11 is a semiconductor chip, and 12 is Au, solder or the like arranged on the semiconductor chip 11. Is a protruding electrode. Reference numeral 14 is a base film of a tape carrier made of polyimide resin, glass epoxy resin, or the like, and 18 is an opening provided in the base film 14. 13 is Cu or C
An inner lead portion of the conductor wiring whose surface is treated with Sn, Au, solder or the like on the surface of the u alloy, and 16 is an outer lead portion formed on the same wiring as the conductor wiring.

The conductor wirings other than the inner lead portion 13 and the outer lead portion 16 are adhered to the base film 14 with an epoxy adhesive agent 15.
Has a structure projecting into the opening 18 of the base film 14, and the base film 14, the adhesive 15, the inner lead portion 13, and the outer lead portion 16 are collectively referred to as a tape carrier.

The inner lead portion 13 and the protruding electrode 12 are joined by thermocompression bonding, and then the joined portion is made of epoxy resin 19
The outer lead portion 16 is connected to an external circuit by being sealed by the above, further cut by a mold or the like after an electrical test.

[0007]

However, in the structure of the above-mentioned conventional semiconductor device, in order to cope with the narrowing of the pitch of the electrodes of the semiconductor chip 11, it is necessary to make the inner lead portions 13 thin, and therefore the thickness of the inner lead portions 13 is reduced. It is necessary to use a thin conductor wiring material. If this is done, the lead strength of the inner lead portion 13 and the outer lead portion 16 is unavoidably reduced, and the protruding electrode 12 of the semiconductor chip 11 and the inner lead portion 13 are thermocompression bonded. At the time of joining, the inner lead portion 13 is apt to be cracked, leading to a decrease in reliability and disconnection, and when the outer lead portion 16 connected to an external circuit is cut by a mold, the lead is deformed. It had the problem of breaking.

The present invention solves such conventional problems,
It is an object of the present invention to provide a semiconductor device using a tape carrier which can cope with a narrow pitch multi-electrode of a semiconductor chip.

[0009]

In order to solve this problem, a semiconductor device according to the present invention has a structure in which an opening is not provided in a base film of an inner lead portion of a tape carrier connected to a protruding electrode of a semiconductor chip. Is something
In addition, the connection between the protruding electrode of the semiconductor chip and the inner lead portion of the tape carrier is made by a photo-curable insulating resin or thermosetting resin that has resin contraction stress during curing between the protruding electrode of the semiconductor chip and the tape carrier of the inner lead portion. Applying resin, applying conductive resin with adhesive force, or heating after processing with solder or indium alloy that eutecticizes the joint between the protruding electrode of the semiconductor chip and the inner lead part with heat It is a thing.

According to the present invention, since there is no opening in the base film portion of the inner lead portion of the tape carrier connected to the protruding electrode of the semiconductor chip, the conductor wiring including the inner lead portion and the outer lead portion of the tape carrier. Since it is possible to use a conductor wiring material that is thinner than before, and the inner lead part that is in close contact with the base film can be miniaturized to a narrow pitch corresponding to the thickness, the narrow pitch multi-electrode of the semiconductor chip can be used. It is possible to obtain a semiconductor device which can easily cope with the trend.

[0011]

BEST MODE FOR CARRYING OUT THE INVENTION The invention according to claim 1 of the present invention is a tape carrier comprising a sheet-shaped base film having a conductor wiring portion formed thereon, and a photocurable insulating resin, a thermosetting resin, or a conductive resin. Alternatively, the tape may be mounted on the tape carrier via either solder or indium alloy, and may be composed of a semiconductor chip in which a protruding electrode is connected to a conductor wiring portion formed on the tape carrier. Since there is no opening in the carrier, it is possible to use a conductor wiring material that is thinner than before, and the conductor of the tape carrier that is connected to the electrodes of the semiconductor chip corresponding to the narrow pitch multi-electrodes of the electrodes of the semiconductor chip. Even if the inner lead portion, which is the wiring portion, is miniaturized, there is a base film in the inner lead portion, so it is not likely to cause lead cracking or wire breakage. Problem has the effect that does not occur.

According to a second aspect of the present invention, in the first aspect of the invention, the thickness of the conductor wiring portion of the semiconductor chip to which the protruding electrode is connected is set to another conductor wiring portion formed on the tape carrier. The thickness of the inner lead part of the tape carrier connected to the electrodes of the semiconductor chip is partially thinned to reduce the lead strength of the outer lead part of the tape carrier connected to the outside. It is possible to form a fine inner lead portion pattern corresponding to the narrow pitch multi-electrode configuration of the electrodes of the semiconductor chip.

According to a third aspect of the invention, in the first or second aspect of the invention, the base film of the tape carrier is composed of a transparent resin, and the semiconductor chip and the tape carrier are fixed to each other by photo-curing. When the insulating resin is used, the resin can be reliably cured in a short time by irradiating light through the base film of the tape carrier.

An embodiment of the present invention will be described below with reference to FIGS. (Embodiment 1) FIG. 1 is a sectional view showing a structure of a semiconductor device according to a first embodiment of the present invention. In FIG. 1, 1 is a semiconductor chip and 2 is a surface of the semiconductor chip 1. Is a protruding electrode made of Au, solder, conductive resin, indium alloy, or the like. Reference numeral 4 is a base film of a tape carrier made of a polyimide resin, glass epoxy resin, polyester resin or the like, 3 and 6 are made of Cu or Cu alloy of the base film 4 of the tape carrier, and Au, Sn, solder, etc. on the surface. Shows a conductor wiring formed by surface treatment, and 3 is an inner lead portion connected to the protruding electrode 2 of the semiconductor chip 1, and 6 is an outer lead portion connected to an external circuit.

Reference numeral 5 is an adhesive for bonding the base film 4, the inner lead portion 3 and the outer lead portion 6 of the conductor wiring, and 7 is the fixing of the semiconductor chip 1 to the tape carrier and the protruding electrode 2 and the inner lead portion 3. It is a photo-curable or thermosetting epoxy-based or acrylic-based insulating resin for connecting and sealing.

The manufacturing process for manufacturing the semiconductor device having the above-described structure according to the present embodiment will be described below.

First, the base film 4 in the outer lead portion 6 of the tape carrier is opened by a mold, and then a conductor such as a copper foil (having a thickness of about 18 to 35 μm) to be a conductor wiring material is attached with the adhesive 5. To adhere. After the adhesive 5 is cured, it is necessary to photo-etch the conductor to align the inner lead portion 3 with the position of the protruding electrode 2 of the semiconductor chip 1 and the outer lead portion 6 with the joint portion of the external circuit. Process into a different pattern shape. The processing limit of the conductor pattern pitch of copper foil or the like is generally 2.3 to 2.8 times the thickness, depending on the material, and the conductor pattern pitch of the copper foil or the like is required from the conductor pattern pitch required for the inner lead portion 3. The thickness is selected or processed by photo etching or the like.

Next, the insulating resin 7 is applied on the inner lead portion 3, and the semiconductor chip 1 is mounted thereon while aligning the positions of the projecting electrodes 2 and the inner lead portion 3 while pressurizing, and simultaneously irradiating light or The insulating resin 7 is cured by heating. At this time, the insulating resin 7 is removed by pressure between the protruding electrode 2 and the inner lead portion 3, the protruding electrode 2 and the inner lead portion 3 are electrically connected, and the insulating resin 7 has an adhesive after curing. The force and the contracting stress have the effects of maintaining the electrical connection between the protruding electrode 2 and the inner lead portion 3 and maintaining the fixation between the semiconductor chip 1 and the tape carrier. Further, since the insulating resin 7 also covers the entire surface of the semiconductor chip 1, the insulating resin 7 also serves as a sealant for the semiconductor chip 1, and a new sealing resin or the like is unnecessary. After the insulating resin 7 is cured, an electrical test is performed, and the outer lead portion 6 cut by a mold or the like is connected to an external circuit by soldering or the like.

According to the present invention, since there is no opening in the base film 4 portion of the inner lead portion 3 of the tape carrier connected to the protruding electrode 2 of the semiconductor chip 1, the inner lead portion 3 and the outer lead of the tape carrier are formed. It is possible to use a conductor wiring material having a smaller thickness than before in the conductor wiring portion including the portion 6, and the inner lead portion 3 adhered to the base film 4 can be miniaturized to a narrow pitch corresponding to the thickness. Moreover, by applying the insulating resin 7 having the adhesive force and the contracting stress to the joint portion after curing, it is possible to obtain the semiconductor device which can easily cope with the narrow pitch multi-electrode of the semiconductor chip 1.

In the present embodiment, the base film 4
Inner lead part 3 and outer lead part 6 of conductor wiring
Although the tape carrier having the adhesive 5 for adhering is used, the inner lead portion 3 and the outer lead portion 6 of the conductor wiring are formed on the base film 4 by plating, and the tape carrier has a two-layer structure without the adhesive 5. The same effect can be obtained with a configuration using.

Further, although the base film 4 in the outer lead portion 6 is opened in this embodiment, a BGA package using a tape carrier in which solder balls or the like are arranged in a grid shape instead of the outer lead portion 6 is used. The same effect can be obtained.

(Embodiment 2) FIG. 2 is a sectional view showing the structure of a semiconductor device according to a second embodiment of the present invention, and the reference numerals in FIG. 2 are the same as those used in Embodiment 1 above. Since it is the same as 1, the description thereof will be omitted.

In FIG. 2, the inner lead portion 3A connected to the protruding electrode 2 of the semiconductor chip 1 is thinner than the other conductor wiring portions of the tape carrier as compared with the first embodiment. It is a thing.

The inner lead portion 3A formed to have a smaller thickness than the other conductor wiring portions of the tape carrier has the conductor 5 formed into a required pattern after the adhesive 5 is cured in the forming process of the first embodiment. This can be obtained by masking the portion other than the inner lead portion 3A and etching only the conductor of the inner lead portion 3A before photoetching for processing. Other manufacturing steps are the same as those of the first embodiment. Since it is the same as the manufacturing process, it is omitted.

According to the present invention, since the conductor thickness of the outer lead portion 6 located in the opening of the base film 4 is not reduced, the lead strength of the outer lead portion 6 is not reduced and the base film 4 is not reduced. The inner lead portion 3A in close contact with the semiconductor chip can be miniaturized into a narrow pitch corresponding to the thickness, and by applying an insulating resin 7 having adhesive force and shrinkage stress after curing to the joint portion, a narrow pitch of the semiconductor chip can be increased. It is possible to obtain a semiconductor device that can easily be adapted to electrodes.

(Third Embodiment) The structure of a semiconductor device according to a third embodiment of the present invention will be described with reference to FIGS. 1 and 2 (the drawings are also used because only the material is different).

In the third embodiment, a transparent polyester resin is used for the base film 4 of the tape carrier.

According to this structure, since the base film portion of the inner lead portion 3 of the tape carrier connected to the protruding electrode 2 of the semiconductor chip 1 is transparent, the protruding electrode 2 of the semiconductor chip 1 and the inner portion of the tape carrier are formed. When a photo-curable resin is used as the insulating resin 7 applied to hold the lead portion 3 adhered, it is possible to irradiate light through the base film, and the insulating resin 7 can be cured in a short time and reliably. Is obtained.

[0029]

As described above, the semiconductor device according to the present invention does not have an opening in the base film of the inner lead portion of the tape carrier that is bonded to the protruding electrode of the semiconductor chip, and retains adhesive force and shrinkage stress after curing. By applying the insulating resin that is applied to the joint portion, even if the inner lead portion of the tape carrier is miniaturized, lead cracks and disconnections do not occur, and the inner lead portion can be partially thinned. It is possible to obtain an effect that it is possible to form a fine pattern of the inner lead portion corresponding to the narrow pitch multiple electrodes of the semiconductor chip without lowering the lead strength of the outer lead portion of the tape carrier connected to the external circuit.

[Brief description of drawings]

FIG. 1 is a sectional view showing a configuration of a semiconductor device according to a first embodiment of the present invention.

FIG. 2 is a sectional view showing a configuration of a semiconductor device according to the second embodiment.

FIG. 3 is a cross-sectional view showing a configuration of a semiconductor device according to a conventional TAB mounting method.

[Explanation of symbols]

 1 Semiconductor Chip 2 Projection Electrode 3,3A Inner Lead Part 4 Base Film 5 Adhesive 6 Outer Lead Part 7 Insulating Resin

Claims (3)

[Claims] 1. A tape carrier comprising a sheet-shaped base film having a conductor wiring portion formed thereon, and the tape carrier via a photocurable insulating resin, a thermosetting resin, a conductive resin, solder or an indium alloy. A semiconductor device comprising a semiconductor chip mounted on the tape carrier and having a protruding electrode connected to a conductor wiring portion formed on the tape carrier. 2. The semiconductor device according to claim 1, wherein the thickness of the conductor wiring portion of the portion to which the protruding electrode of the semiconductor chip is connected is smaller than the thickness of the other conductor wiring portion formed on the tape carrier. 3. The semiconductor device according to claim 1, wherein the base film of the tape carrier is made of transparent resin.