JPH09139370A - 半導体装置作製方法及び薄膜半導体装置作製方法 - Google Patents

半導体装置作製方法及び薄膜半導体装置作製方法

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Publication number
JPH09139370A
JPH09139370A JP25741496A JP25741496A JPH09139370A JP H09139370 A JPH09139370 A JP H09139370A JP 25741496 A JP25741496 A JP 25741496A JP 25741496 A JP25741496 A JP 25741496A JP H09139370 A JPH09139370 A JP H09139370A
Authority
JP
Japan
Prior art keywords
film
semiconductor device
manufacturing
hydrogen
carbon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP25741496A
Other languages
English (en)
Japanese (ja)
Other versions
JPH09139370A5 (enExample
Inventor
Shunpei Yamazaki
舜平 山崎
Mitsunori Sakama
光範 坂間
Takeshi Fukada
武 深田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP25741496A priority Critical patent/JPH09139370A/ja
Publication of JPH09139370A publication Critical patent/JPH09139370A/ja
Publication of JPH09139370A5 publication Critical patent/JPH09139370A5/ja
Withdrawn legal-status Critical Current

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  • Cleaning Or Drying Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
JP25741496A 1995-09-08 1996-09-06 半導体装置作製方法及び薄膜半導体装置作製方法 Withdrawn JPH09139370A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP25741496A JPH09139370A (ja) 1995-09-08 1996-09-06 半導体装置作製方法及び薄膜半導体装置作製方法

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP25696895 1995-09-08
JP7-256968 1995-09-08
JP7-262520 1995-09-16
JP26252095 1995-09-16
JP25741496A JPH09139370A (ja) 1995-09-08 1996-09-06 半導体装置作製方法及び薄膜半導体装置作製方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2006235031A Division JP4476984B2 (ja) 1995-09-08 2006-08-31 半導体装置の作製方法

Publications (2)

Publication Number Publication Date
JPH09139370A true JPH09139370A (ja) 1997-05-27
JPH09139370A5 JPH09139370A5 (enExample) 2004-09-09

Family

ID=27334581

Family Applications (1)

Application Number Title Priority Date Filing Date
JP25741496A Withdrawn JPH09139370A (ja) 1995-09-08 1996-09-06 半導体装置作製方法及び薄膜半導体装置作製方法

Country Status (1)

Country Link
JP (1) JPH09139370A (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004349583A (ja) * 2003-05-23 2004-12-09 Sharp Corp トランジスタの製造方法
JP2008211197A (ja) * 2007-01-30 2008-09-11 Fujikura Ltd 酸化物基板の清浄化方法及び酸化物半導体薄膜の製造方法
JP2008214491A (ja) * 2007-03-05 2008-09-18 Ulvac Japan Ltd 表面処理方法
JP2012169601A (ja) * 2011-01-26 2012-09-06 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004349583A (ja) * 2003-05-23 2004-12-09 Sharp Corp トランジスタの製造方法
JP2008211197A (ja) * 2007-01-30 2008-09-11 Fujikura Ltd 酸化物基板の清浄化方法及び酸化物半導体薄膜の製造方法
JP2008214491A (ja) * 2007-03-05 2008-09-18 Ulvac Japan Ltd 表面処理方法
JP2012169601A (ja) * 2011-01-26 2012-09-06 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法

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