JPH09139370A - 半導体装置作製方法及び薄膜半導体装置作製方法 - Google Patents
半導体装置作製方法及び薄膜半導体装置作製方法Info
- Publication number
- JPH09139370A JPH09139370A JP25741496A JP25741496A JPH09139370A JP H09139370 A JPH09139370 A JP H09139370A JP 25741496 A JP25741496 A JP 25741496A JP 25741496 A JP25741496 A JP 25741496A JP H09139370 A JPH09139370 A JP H09139370A
- Authority
- JP
- Japan
- Prior art keywords
- film
- semiconductor device
- manufacturing
- hydrogen
- carbon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 title claims description 72
- 238000004519 manufacturing process Methods 0.000 title claims description 46
- 239000010409 thin film Substances 0.000 title claims description 39
- 239000000758 substrate Substances 0.000 claims abstract description 148
- 238000000034 method Methods 0.000 claims abstract description 121
- 239000000356 contaminant Substances 0.000 claims abstract description 29
- 230000003197 catalytic effect Effects 0.000 claims abstract description 15
- 239000010408 film Substances 0.000 claims description 273
- 239000001257 hydrogen Substances 0.000 claims description 164
- 229910052739 hydrogen Inorganic materials 0.000 claims description 164
- 229910052799 carbon Inorganic materials 0.000 claims description 157
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 148
- -1 oxygen radicals Chemical class 0.000 claims description 122
- 239000001301 oxygen Substances 0.000 claims description 115
- 229910052760 oxygen Inorganic materials 0.000 claims description 115
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 96
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 75
- 230000015572 biosynthetic process Effects 0.000 claims description 44
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 39
- 229920005591 polysilicon Polymers 0.000 claims description 39
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 34
- 239000012535 impurity Substances 0.000 claims description 33
- 239000000126 substance Substances 0.000 claims description 32
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 20
- 229910000077 silane Inorganic materials 0.000 claims description 20
- 239000000203 mixture Substances 0.000 claims description 17
- 150000002431 hydrogen Chemical class 0.000 claims description 11
- 238000011109 contamination Methods 0.000 claims description 10
- 238000002156 mixing Methods 0.000 claims description 7
- 239000003344 environmental pollutant Substances 0.000 claims description 6
- 231100000719 pollutant Toxicity 0.000 claims description 6
- YZCKVEUIGOORGS-IGMARMGPSA-N Protium Chemical compound [1H] YZCKVEUIGOORGS-IGMARMGPSA-N 0.000 claims description 3
- 239000010407 anodic oxide Substances 0.000 claims description 2
- 239000012298 atmosphere Substances 0.000 claims description 2
- 150000004767 nitrides Chemical class 0.000 claims description 2
- 150000002926 oxygen Chemical class 0.000 claims 5
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 claims 1
- 238000010521 absorption reaction Methods 0.000 abstract description 5
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 5
- 239000011248 coating agent Substances 0.000 abstract description 4
- 238000000576 coating method Methods 0.000 abstract description 4
- 238000011161 development Methods 0.000 abstract description 4
- 238000009413 insulation Methods 0.000 abstract 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 67
- 239000007789 gas Substances 0.000 description 45
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 42
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 41
- 239000010410 layer Substances 0.000 description 41
- 238000012545 processing Methods 0.000 description 39
- 239000003054 catalyst Substances 0.000 description 37
- 230000000694 effects Effects 0.000 description 35
- 230000008569 process Effects 0.000 description 30
- 239000007790 solid phase Substances 0.000 description 30
- 239000002585 base Substances 0.000 description 26
- 238000010438 heat treatment Methods 0.000 description 26
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 26
- 229910021417 amorphous silicon Inorganic materials 0.000 description 24
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 24
- 238000004380 ashing Methods 0.000 description 21
- 229910052697 platinum Inorganic materials 0.000 description 21
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 20
- 239000011229 interlayer Substances 0.000 description 20
- 229910052759 nickel Inorganic materials 0.000 description 20
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 18
- 238000004140 cleaning Methods 0.000 description 16
- 229910017052 cobalt Inorganic materials 0.000 description 16
- 239000010941 cobalt Substances 0.000 description 16
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 16
- 239000012159 carrier gas Substances 0.000 description 15
- 239000011521 glass Substances 0.000 description 13
- 238000004544 sputter deposition Methods 0.000 description 13
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 11
- 238000005984 hydrogenation reaction Methods 0.000 description 11
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 10
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 10
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 10
- 150000001875 compounds Chemical class 0.000 description 10
- 229910052750 molybdenum Inorganic materials 0.000 description 10
- 239000011733 molybdenum Substances 0.000 description 10
- 229910052757 nitrogen Inorganic materials 0.000 description 10
- 229910052763 palladium Inorganic materials 0.000 description 10
- 238000000206 photolithography Methods 0.000 description 10
- 239000010453 quartz Substances 0.000 description 10
- 229910052723 transition metal Inorganic materials 0.000 description 10
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 9
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 9
- 238000002474 experimental method Methods 0.000 description 9
- 238000000605 extraction Methods 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 230000006866 deterioration Effects 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 7
- 230000008859 change Effects 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 7
- 239000002784 hot electron Substances 0.000 description 7
- 238000005468 ion implantation Methods 0.000 description 7
- 239000002243 precursor Substances 0.000 description 7
- 229910052707 ruthenium Inorganic materials 0.000 description 7
- 229910052715 tantalum Inorganic materials 0.000 description 7
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 6
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 6
- 239000000460 chlorine Substances 0.000 description 6
- 229910001882 dioxygen Inorganic materials 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 6
- 238000005259 measurement Methods 0.000 description 6
- 230000008018 melting Effects 0.000 description 6
- 238000002844 melting Methods 0.000 description 6
- 238000009832 plasma treatment Methods 0.000 description 6
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 6
- 239000000243 solution Substances 0.000 description 6
- 238000012360 testing method Methods 0.000 description 6
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 5
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 5
- 229910052783 alkali metal Inorganic materials 0.000 description 5
- 150000001340 alkali metals Chemical class 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 229910052801 chlorine Inorganic materials 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 238000000354 decomposition reaction Methods 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 229910001385 heavy metal Inorganic materials 0.000 description 5
- 239000011261 inert gas Substances 0.000 description 5
- 238000002347 injection Methods 0.000 description 5
- 239000007924 injection Substances 0.000 description 5
- 150000002736 metal compounds Chemical class 0.000 description 5
- 238000000059 patterning Methods 0.000 description 5
- 229910052702 rhenium Inorganic materials 0.000 description 5
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 5
- 229910002027 silica gel Inorganic materials 0.000 description 5
- 239000000741 silica gel Substances 0.000 description 5
- 229910052708 sodium Inorganic materials 0.000 description 5
- 239000011734 sodium Substances 0.000 description 5
- 238000001179 sorption measurement Methods 0.000 description 5
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 5
- 229910052719 titanium Inorganic materials 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- 150000003624 transition metals Chemical class 0.000 description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 5
- 229910052721 tungsten Inorganic materials 0.000 description 5
- 239000010937 tungsten Substances 0.000 description 5
- 229910052720 vanadium Inorganic materials 0.000 description 5
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 5
- 230000004913 activation Effects 0.000 description 4
- 230000005587 bubbling Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 4
- 238000002513 implantation Methods 0.000 description 4
- 239000004973 liquid crystal related substance Substances 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 4
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- 239000005388 borosilicate glass Substances 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- 238000006555 catalytic reaction Methods 0.000 description 3
- 230000001678 irradiating effect Effects 0.000 description 3
- 238000005499 laser crystallization Methods 0.000 description 3
- 150000001282 organosilanes Chemical class 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 239000002033 PVDF binder Substances 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000003795 desorption Methods 0.000 description 2
- 230000005661 hydrophobic surface Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000007935 neutral effect Effects 0.000 description 2
- HMMGMWAXVFQUOA-UHFFFAOYSA-N octamethylcyclotetrasiloxane Chemical compound C[Si]1(C)O[Si](C)(C)O[Si](C)(C)O[Si](C)(C)O1 HMMGMWAXVFQUOA-UHFFFAOYSA-N 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 235000006408 oxalic acid Nutrition 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 229920000573 polyethylene Polymers 0.000 description 2
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- MIZLGWKEZAPEFJ-UHFFFAOYSA-N 1,1,2-trifluoroethene Chemical group FC=C(F)F MIZLGWKEZAPEFJ-UHFFFAOYSA-N 0.000 description 1
- 229910014033 C-OH Inorganic materials 0.000 description 1
- 229920000742 Cotton Polymers 0.000 description 1
- 229910014570 C—OH Inorganic materials 0.000 description 1
- 229920001780 ECTFE Polymers 0.000 description 1
- 229910005883 NiSi Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 229910008051 Si-OH Inorganic materials 0.000 description 1
- 229910006358 Si—OH Inorganic materials 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000013543 active substance Substances 0.000 description 1
- 239000002156 adsorbate Substances 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 150000001721 carbon Chemical class 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000005262 decarbonization Methods 0.000 description 1
- 238000006356 dehydrogenation reaction Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 229920000840 ethylene tetrafluoroethylene copolymer Polymers 0.000 description 1
- 238000002309 gasification Methods 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 1
- 230000005660 hydrophilic surface Effects 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000012625 in-situ measurement Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910021334 nickel silicide Inorganic materials 0.000 description 1
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 238000006557 surface reaction Methods 0.000 description 1
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical group FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
Landscapes
- Drying Of Semiconductors (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25741496A JPH09139370A (ja) | 1995-09-08 | 1996-09-06 | 半導体装置作製方法及び薄膜半導体装置作製方法 |
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7-256968 | 1995-09-08 | ||
| JP25696895 | 1995-09-08 | ||
| JP26252095 | 1995-09-16 | ||
| JP7-262520 | 1995-09-16 | ||
| JP25741496A JPH09139370A (ja) | 1995-09-08 | 1996-09-06 | 半導体装置作製方法及び薄膜半導体装置作製方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006235031A Division JP4476984B2 (ja) | 1995-09-08 | 2006-08-31 | 半導体装置の作製方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH09139370A true JPH09139370A (ja) | 1997-05-27 |
| JPH09139370A5 JPH09139370A5 (enExample) | 2004-09-09 |
Family
ID=27334581
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP25741496A Withdrawn JPH09139370A (ja) | 1995-09-08 | 1996-09-06 | 半導体装置作製方法及び薄膜半導体装置作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH09139370A (enExample) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004349583A (ja) * | 2003-05-23 | 2004-12-09 | Sharp Corp | トランジスタの製造方法 |
| JP2008211197A (ja) * | 2007-01-30 | 2008-09-11 | Fujikura Ltd | 酸化物基板の清浄化方法及び酸化物半導体薄膜の製造方法 |
| JP2008214491A (ja) * | 2007-03-05 | 2008-09-18 | Ulvac Japan Ltd | 表面処理方法 |
| JP2012169601A (ja) * | 2011-01-26 | 2012-09-06 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
-
1996
- 1996-09-06 JP JP25741496A patent/JPH09139370A/ja not_active Withdrawn
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004349583A (ja) * | 2003-05-23 | 2004-12-09 | Sharp Corp | トランジスタの製造方法 |
| JP2008211197A (ja) * | 2007-01-30 | 2008-09-11 | Fujikura Ltd | 酸化物基板の清浄化方法及び酸化物半導体薄膜の製造方法 |
| JP2008214491A (ja) * | 2007-03-05 | 2008-09-18 | Ulvac Japan Ltd | 表面処理方法 |
| JP2012169601A (ja) * | 2011-01-26 | 2012-09-06 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
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