JPH0883914A - 多結晶半導体装置及びその製造方法 - Google Patents

多結晶半導体装置及びその製造方法

Info

Publication number
JPH0883914A
JPH0883914A JP22016694A JP22016694A JPH0883914A JP H0883914 A JPH0883914 A JP H0883914A JP 22016694 A JP22016694 A JP 22016694A JP 22016694 A JP22016694 A JP 22016694A JP H0883914 A JPH0883914 A JP H0883914A
Authority
JP
Japan
Prior art keywords
polycrystalline semiconductor
region
semiconductor layer
film
energy density
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP22016694A
Other languages
English (en)
Japanese (ja)
Inventor
Yuki Matsuura
由紀 松浦
Mitsuo Nakajima
充雄 中島
Yasuto Kawahisa
慶人 川久
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP22016694A priority Critical patent/JPH0883914A/ja
Priority to KR1019950030003A priority patent/KR0170467B1/ko
Priority to TW084110280A priority patent/TW289166B/zh
Publication of JPH0883914A publication Critical patent/JPH0883914A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6745—Polycrystalline or microcrystalline silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Plasma & Fusion (AREA)
  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
JP22016694A 1994-09-14 1994-09-14 多結晶半導体装置及びその製造方法 Pending JPH0883914A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP22016694A JPH0883914A (ja) 1994-09-14 1994-09-14 多結晶半導体装置及びその製造方法
KR1019950030003A KR0170467B1 (ko) 1994-09-14 1995-09-14 비단결정 반도체 장치 및 그 제조 방법
TW084110280A TW289166B (enrdf_load_stackoverflow) 1994-09-14 1995-10-02

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22016694A JPH0883914A (ja) 1994-09-14 1994-09-14 多結晶半導体装置及びその製造方法

Publications (1)

Publication Number Publication Date
JPH0883914A true JPH0883914A (ja) 1996-03-26

Family

ID=16746925

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22016694A Pending JPH0883914A (ja) 1994-09-14 1994-09-14 多結晶半導体装置及びその製造方法

Country Status (3)

Country Link
JP (1) JPH0883914A (enrdf_load_stackoverflow)
KR (1) KR0170467B1 (enrdf_load_stackoverflow)
TW (1) TW289166B (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001051296A (ja) * 1999-08-06 2001-02-23 Seiko Epson Corp 薄膜デバイス装置の製造方法、薄膜デバイス装置、アクティブマトリクス基板の製造方法、アクティブマトリクス基板および電気光学装置
JP2005175476A (ja) * 2003-12-06 2005-06-30 Samsung Electronics Co Ltd 多結晶シリコン薄膜の製造方法およびそれを利用したトランジスタの製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001051296A (ja) * 1999-08-06 2001-02-23 Seiko Epson Corp 薄膜デバイス装置の製造方法、薄膜デバイス装置、アクティブマトリクス基板の製造方法、アクティブマトリクス基板および電気光学装置
JP2005175476A (ja) * 2003-12-06 2005-06-30 Samsung Electronics Co Ltd 多結晶シリコン薄膜の製造方法およびそれを利用したトランジスタの製造方法

Also Published As

Publication number Publication date
KR960012566A (ko) 1996-04-20
TW289166B (enrdf_load_stackoverflow) 1996-10-21
KR0170467B1 (ko) 1999-02-01

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