JPH0855881A - Packaging structure of microelectronics device and manufacture thereof - Google Patents

Abstract

PROBLEM TO BE SOLVED: To facilitate positioning between tip ends of a plurality of leads and a plurality of contact points by fitting a terminal end for a first element, extending the plurality of long movable leads having the tip ends which are offset from the terminal end with intervals from a first face and forming the plurality of leads. SOLUTION: The first element 84 has a plurality of long moving leads 60 on the first face 37 and the plurality of leads 60 are extended along the first face 37. The terminal end 66 is fitted through a key part 82. The tip ends 68 which are offset from the terminal end 66 are brought into contact with one another at a position detached from the first face 37 with a gap 78 through the key part 82 and they are adhered. Thus, positioning between the tip ends 68 of the plurality of leads 60 and the plurality of contact points 90 can be facilitated.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a device and method for mounting or connecting a microelectronic device such as a semiconductor chip.

[0002]

2. Description of the Related Art In a recent microelectronic device having a complicated structure such as a semiconductor chip, the number of connections that must be connected to other electronic components is very large. For example, some microprocessor chips with complicated structures require hundreds of connections to connect to external devices.

As a method for connecting a semiconductor chip to an electric wiring pattern on a mounting board, there are the following three methods that are widely and generally adopted. They are,
Wire bonding method, TAB (tape automated bon)
ding) method and flip-chip bonding method. In the wire bonding method, the bottom surface or the back surface of the chip is brought into contact with the substrate, and the front surface or the top surface of the chip, which is the contact mounting surface, faces upward, that is, the side opposite to the substrate, and the chip is mounted on the substrate. Place. Then, the contacts on the chip and the pads on the substrate are connected by individual gold or aluminum bonding wires. TAB
In the method, a lead array consisting of a plurality of leads is formed in advance on a tape made of a flexible insulator, and the tape is applied to a chip and a substrate, and a plurality of contacts on the chip and the substrate are attached. Bond individual leads to the pads on top. In both of these wire bonding methods and the conventional TAB method, pads on the substrate are arranged around the area occupied by the chip, and a large number of bonding wires or leads are formed on the substrate from the chip to the surrounding area. It will spread and extend radially to the pad. The area occupied by the entire subassembly thus formed is much larger than the area occupied by the chip itself. Therefore, when these methods are adopted, the whole assembly is considerably increased. This is a serious disadvantage because the speed at which a microelectronic assembly can operate is inversely proportional to the size of the assembly. Further, the wire bonding method and the TAB method are most preferably applied to a chip in which a plurality of contacts are arranged along the outer circumference of the chip. That is, these methods are applied to a chip in which a plurality of contacts are arranged over the entire front surface or most of the front surface of the chip so as to form a so-called surface array, that is, in a grid pattern. It is difficult.

In the flip chip mounting method, the contact mounting surface of the chip is made to face the substrate. Then, each of the plurality of contacts of the chip is connected to the corresponding pad on the substrate by soldering. Further, for the connection, for example, first, a solder ball is provided on one of the substrate and the chip, and then the chip is faced downward to be superposed on the substrate to instantaneously melt or reflow the solder. This flip chip method results in a compact assembly. This is because the area of the occupied area on the substrate does not exceed the area of the area occupied by the chip itself. However, there is a serious problem of thermal stress in the assembly formed by using the flip chip method. The joint portion of the solder that joins the contact point of the chip and the substrate has great rigidity. Due to thermal expansion and contraction during use, the chip and substrate undergo a dimensional change, which
Large stress is generated in the solder joint with high rigidity. This large stress can lead to fatigue failure of the joint. Furthermore, it is difficult to test the chips before mounting them on the substrate, which makes it difficult to maintain the product quality level required for the completed assembly, especially in an assembly containing a large number of chips. Is.

Various attempts have been made to solve the above problems. Some useful solutions are disclosed in US Pat. Nos. 5,148,265 and 5,148,266, which are assigned to the assignee of the basic US application of the present application. The preferred embodiment structure disclosed in these U.S. patents includes a flexible sheet-like structure called an "interposer" or "chip carrier". A preferred chip carrier has a plurality of terminals provided on a flexible sheet-like top layer. Describing the usage, the interposer is mounted on the front surface of the chip, that is, the contact mounting surface, with the side provided with the plurality of terminals facing upward, that is, the side opposite to the chip. Subsequently, the terminals of the interposer are connected to the contacts of the chip. The most preferable method of this connection is to form a plurality of leads on the interposer in advance and bond the leads to a plurality of contacts of the chip by using a tool for pressing the leads. The assembly thus completed is then connected to a substrate, which is done by bonding the terminals of the chip carrier to the substrate. Since the leads formed on the chip carrier and the insulating layer forming the chip carrier are both flexible, the terminals on the chip carrier are connected to the contacts on the chip with respect to each other. It is relatively movable, and due to the movement, a large stress is not generated at the joint between the lead and the chip and the joint between the terminal and the substrate. Therefore, this assembly can mitigate the effects of heat. In addition, the assembly, in its most preferred construction, comprises a deformable layer between the terminals of the chip carrier and the surface of the chip itself,
This layer, which is, for example, an elastomer layer, is incorporated in the chip carrier and is interposed between the insulator layer of the chip carrier and the chip. With this easily deformable structure, each terminal can be individually displaced in the direction toward the chip. This allows the subassembly and the test fixture to be in effective contact. Thus, a test fixture with multiple electrical contacts can contact all terminals of its subassembly, even with small height variations between the terminals. The sub-assembly can be tested prior to bonding to the substrate, thus passing the tested and confirmed good parts to the substrate assembly operation. This also provides enormous economic and quality advantages.

Basis of the present application US patent application Ser. No. 08 / 190,779 (hereinafter “Patent Application No. 779”, which is a co-pending application of the US application)
No.)) describes further improvements. This patent application '799 uses a top layer sheet that is a flexible insulating sheet having a top surface and a bottom surface. A plurality of terminals are attached to this top layer sheet. A support layer is arranged below the uppermost sheet, and the surface of the support layer opposite to the uppermost sheet is the lower surface. A plurality of electrically conductive elongated leads are connected to the plurality of terminals of the uppermost sheet, and the leads are arranged substantially in parallel with each other and downward from the respective terminals,
It extends through the support layer. The lower end of each lead reaches the lower surface of the support layer. The lower ends of the leads are provided with a conductive bonding material such as a eutectic alloy bonding material. The support layer surrounds the leads and supports the leads.

In order to connect the component having the above structure to a microelectronic component such as a semiconductor chip or a wafer, the bottom surface of the supporting layer is superposed on the contact mounting surface of the chip, and the lower ends of the leads are attached to the chip. Of the contacts, and then subjecting the assembly to high temperature and pressure. The respective lower ends of all leads are bonded to the respective contacts of the chip at approximately the same time. The leads thus bonded connect the terminals of the uppermost sheet and the contacts of the chip. The support layer may be formed of a deformable material having a relatively low modulus of elasticity, or if formed of a material other than that, may be removed after the lead bonding step is completed to remove such a deformable material. Exchange with layers is desirable. The finished assembly is desirable because its terminals are movable relative to the chip, allowing testing and mitigating thermal effects. Also, the components and methods of patent application '799, as well as those, provide a number of additional advantages, of which only a single process similar to the laminating process is performed. Therefore, it is also possible to complete all the joining to members such as chips. The components and methods of this patent application '799 are particularly advantageous for use in microelectronic devices such as chips, which have multiple contacts and are arranged in a planar array. .

However, while these conventional examples have the above-mentioned advantages as well as other advantages, there is also a need for further improvement.

[0009]

One aspect of the present invention is:
A method of manufacturing a lead array for microelectronics is provided. The method according to this aspect of the invention includes the step of providing a first element, the first element comprising:
The element has a first surface with a plurality of elongate flexible leads, the plurality of leads extending along the first surface, each of the plurality of leads being attached to the first element. It has an attached terminal side end and a tip side end offset from the terminal side end in a predetermined first horizontal direction parallel to the first surface. The method further includes the step of simultaneously molding all of the plurality of leads, wherein in the lead forming step, all of the tip end portions of each of the plurality of leads are By moving the tip side end portion relative to the terminal side end portion, and thus relative to the first element, the tip end side end portion is moved to the first side.
Bend away from the element. The tip end is moved so as to make a predetermined displacement, whereby all of the plurality of leads are simultaneously deformed in a predetermined deformation mode.

The tip-side end portions of the plurality of leads are separably fixed to the first element, and the tip-side end portions of the plurality of leads are in the execution of the moving step. It is preferable that the first element is separated from the first element. All the tip end portions of the plurality of leads are attached to the second element, and the tip end portions of the plurality of leads are relative to the respective terminal end portions of the leads. Desirably, the step of moving the second element includes the step of moving the second element relative to the first element. In one preferred configuration, the second element is relative to the first element,
A second direction opposite to the first horizontal direction, that is, a direction opposite to the direction from the terminal side end of the lead to the tip end side;
I am trying to move horizontally. The second element is
Simultaneously with this horizontal movement, it is preferable to move further downward in the vertical direction and away from the first element. The effect obtained as a result of the above movement is that the tip end of each lead is moved horizontally toward the terminal end of the lead, and vertically away from the terminal end. Is to move to the respective molding positions,
In the molding position, the leads extend substantially vertically downward in the direction away from the first element.
In another preferable configuration example, the plurality of leads are bent in a horizontal direction parallel to the surfaces of the first and second elements in an initial state, and the first and second elements are vertically separated from each other. Move to. This movement causes the horizontal bend to partially approximate a straight line, which in turn causes the plurality of leads to bend in a bent configuration that extends vertically.

The method according to this aspect of the invention further comprises injecting a flowable and preferably deformable insulating material around the plurality of leads after completion of the lead forming step,
It is preferable to include a step of curing the fluid material to form an insulating support layer around the plurality of leads. Most preferably, the first element is an uppermost layer sheet made of a flexible insulating sheet, and terminals extending through the uppermost layer sheet at respective terminal side end portions of the plurality of leads. The structure is provided.

One of the particularly preferable structural examples is one in which the second element itself is a microelectronic element such as a semiconductor chip or a wafer. In this configuration example, the attaching step of attaching the tip end portions of the leads to the second element includes attaching the tip end portions of the leads to a plurality of contacts of a microelectronic element such as the chip. Bonding to. This step is preferably performed when the leads are in their initial position, the undeformed position. In this case, all of the tip ends are simultaneously bonded to the contacts of the microelectronic element. When the plurality of leads are bonded to the plurality of contacts, they are in an undeformed state which is an initial state of the leads. Therefore, the position of the tip end portion of each of the plurality of leads is good at this stage. Controllable. This facilitates the alignment between the tip-side ends of the leads and the contacts. Moreover, the bonding process itself can exert a significant amount of force between the distal end of the lead and the contact.

When the first element is a flexible insulating sheet having a plurality of terminals, and the second element is a microelectronic element such as a chip or a wafer, the moving step is completed. After that, an easily deformable insulating support layer may be introduced into the space between the microelectronic element and the insulating sheet. In the assembly obtained by doing so, the plurality of terminals are connected to the microelectronic element by the plurality of flexible leads, but relative to the microelectronic element, It can be easily moved in both a direction parallel to the surface of the microelectronic element and a direction approaching the microelectronic element. The assembly thus obtained can be easily mounted on a large-sized substrate in addition to being able to easily perform a test in which a test probe is brought into contact. The ease of movement of the terminals reduces the influence of the difference in the amount of thermal expansion or the amount of thermal contraction between the chip and the substrate on which the chip is mounted. In a modification of this method, the first element is a microelectronic device such as a chip or a wafer. In this case, the chip or wafer has the plurality of leads extending along the surface thereof in the initial state, and the terminal side end of each of the plurality of leads is provided on the chip or the like. The tip ends of the plurality of leads are detachably attached to the surface of the wafer and the like while being fixed to the plurality of contacts. In this modification, the second element is preferably a flexible insulating sheet having a plurality of contact structures. The tip end of each of the plurality of leads is attached to the plurality of contact structures before the insulating sheet and the microelectronic element are moved relative to each other.

In a particularly preferred configuration example, one of the first and second elements is a multi-chip unit such as a wafer containing a plurality of semiconductor chips with a plurality of contacts. And the other of the first and second elements is a sheet extending so as to cover the plurality of chips. In this case, for example, the sheet, which is the first element, includes a plurality of regions, and one of the regions corresponds to each of the plurality of chips. If the second element is a wafer, the step of attaching the distal ends of each of the plurality of leads to the second element is in some of the plurality of regions, and preferably in the plurality of regions. Connecting each tip end of each of the plurality of leads in all of the regions to one of the plurality of chips by simultaneously bonding to the plurality of contacts of the corresponding plurality of chips. It is preferable to include. The method further comprises cutting a plurality of chips from the multi-chip device or wafer and cutting a plurality of regions from the sheet, each of which includes one chip and a corresponding portion of the sheet. It includes a cutting step to form individual units. The method further comprises injecting a flowable insulating material between the wafer and the sheet after completion of the lead bonding step and prior to performing the cutting step and curing the insulating material to facilitate deformation. It preferably includes the step of forming an insulating support layer. In this case, the cutting step includes a step of cutting the insulating support layer so that each unit formed in the cutting step includes a part of the insulating support layer. Alternatively, a multi-chip unit may be provided in a desired configuration for use as a multi-chip unit, such as a multi-chip assembly mounted on a common support member such as a heat sink. And the first element, the sheet, may include circuitry for interconnecting the plurality of chips. In this modification, the chips are not separated from each other.

The step of bonding the tip end of each of the plurality of leads to the plurality of contacts of the microelectronic element includes connecting the first element, which is the top layer sheet, to the microelectronic element. Aligning, thereby aligning the tips of the plurality of tips with the contacts, and pressing the sheet against the microelectronic element while maintaining the alignment. Most preferably, the step of applying is included. in this case,
The sheet may assist in alignment by engaging a stiffening structure during the bonding step. This reinforcing structure is
A flexible but substantially stretch resistant foil, such as a metal foil, attached to the sheet may be included. Alternatively or in addition, the reinforcing structure may include a ring having great rigidity and having a central opening, the sheet extending into the central opening and tensioned by the ring. You may make it hold | maintain. In the step of pressing the sheet against the contact-equipped surface, a fluid pressure such as air pressure is applied to the upper surface of the sheet directly or through a membrane member or a bag to cover the entire surface of the sheet. And maintaining a uniform pressure.

In another embodiment of the method according to the invention, a molding process is carried out to produce the components to be mounted on the microelectronic element after completion. In the manufacturing process for manufacturing such parts, the second element may be a temporary element, ie a removable element, for example a sheet of dissolvable polymer or the like. This temporary element is removed after the support layer is formed, for example by dissolving and removing a dissolvable sheet, whereby the distal ends of each of the plurality of leads are placed on the underside of the support layer. Make it exposed. Before or after the step of forming the insulating support layer is completed, a bonding material may be attached to the tip end portions of the leads. In order to attach the component thus obtained to a microelectronic element such as a chip, the exposed surface of the support layer is superposed on the contact mounting surface of the element such as the chip, and then the tip of each of the plurality of leads is attached. The side edge may be bonded to a plurality of contacts of the element such as the chip.
After completing the connection of this part to the element such as the chip,
A plurality of terminals provided on the flexible sheet are electrically connected to a plurality of contacts of the chip, and on the surface of the chip relative to the plurality of contacts. It is movable both in the parallel direction and in the direction approaching the surface of the chip.

In a modification of the above method, the second element is a permanent, flexible insulating sheet, which is initially adjacent to the first sheet. positioned. A conductive tip structure is provided at the tip end of each of the plurality of leads, and the tip structure is, for example, a conductive post extending through the second insulating sheet. Or beer, etc. In the lead forming step, the second sheet is moved away from the first sheet, and a fluid insulating material is injected between the sheets. The tip structure includes
A conductive bonding material may be provided, the component thus obtained being connected to the microelectronic element by superimposing the surface of the second sheet on the contact mounting surface of the microelectronic element. be able to.

Another aspect of the present invention provides a component for connection in microelectronics, the component comprising an insulative first element having a first surface, a lower surface, and the first element. A plurality of elongated flexible leads extending over the first side of the element. Each of the plurality of leads has a terminal-side end portion fixed to the first element and a tip-side end portion separably fixed to the first element and movable in a direction away from the first element. Have and. It is preferable that the tip-side end of each of the plurality of leads is offset from the terminal-side end of the lead in a first horizontal direction parallel to the first surface. It is preferable that the insulative first element is a sheet having a second surface that is an upper surface opposite to the first surface, and the component further includes the terminal side end of each of the plurality of leads. It is preferable to include a plurality of conductive terminal structures extending through the sheet at the positions of the portions.
It is preferable that each of the plurality of leads has a conductive bonding material at the tip end portion. In this case, the plurality of leads include gold, and the bonding material forms a low melting point eutectic alloy with gold, such as a metal selected from the group consisting of tin, germanium, and silicon. Can include a metal selected to do so. It is preferable that the plurality of leads be arranged in a regular grid pattern with a spacing between corresponding components of adjacent leads being about 1.25 mm or less. Each of the plurality of leads has a length of about 200 to about 1
It is desirable to have a thickness of 000 microns, a thickness of about 10 to about 25 microns, and a width of about 10 to about 50 microns. The component according to this aspect of the invention can be used in the method described above.

Yet another aspect of the present invention is to provide a connector for microelectronics.
The connector includes a body having a lower surface, such as a flexible insulating sheet, and is arranged in a plane array and is attached to the body to expose a plurality of exposed surfaces on the lower surface of the body. It has a terminal structure. The connector according to this aspect of the present invention includes a plurality of leads, each of the leads extending in a direction away from the lower surface, and each of the leads of the plurality of terminal structures. It has a terminal side end connected to one and a tip side end apart from the terminal structure. The connector according to this aspect of the invention further comprises a layer of easily deformable insulating material in contact with the lower surface of the body, the easily deformable layer having a lower surface opposite the body. The easily deformable layer substantially surrounds and supports the leads. The tip end of each of the plurality of leads projects from the lower surface of the easily deformable layer. for that reason,
By overlapping the contact mounting surface of the microelectronic element and the lower surface of the easily deformable layer, the tip end of each of the leads can be brought into contact with the contacts of the microelectronic element. It is desirable that each of the plurality of leads is provided with a conductive bonding material at the tip end portion thereof for joining the tip end portion to the contact. The plurality of leads may be substantially S-shaped. Each of the plurality of leads is formed of a metal ribbon having major surfaces facing each other, and the ribbon is bent in a direction perpendicular to the major surface,
It is possible to form a bent form of the lead including an S-shape.

Yet another aspect of the present invention is to provide a microelectronic assembly,
The microelectronic assembly comprises a microelectronic element having a front surface with a plurality of contacts arranged in a planar array. The assembly includes a connector body having a lower surface facing the front surface of the microelectronic element with a space provided between the front surface and the front surface of the microelectronic element. The connector
The body includes a plurality of terminal structures exposed in the lower surface and arranged in a planar array extending over the array of contacts of the microelectronic element.
The assembly includes a plurality of bent-shaped flexible leads extending between the plurality of terminal structures and the plurality of contacts. Here again, each of the plurality of leads can be formed of a metal ribbon having main surfaces that are opposite to each other and bent in a direction perpendicular to the main surfaces to form an S-shape.

The assembly and connector according to the last two of the various aspects of the invention described above are:
It can be easily manufactured by the preferred methods described above. The preferred assemblies and connectors according to these aspects of the invention provide a compact and reliable connection structure for semiconductor chips and other devices.

Yet another aspect of the present invention provides a chip or wafer assembly, which comprises a chip or a wafer containing a plurality of chips, The chip or wafer has a first surface provided with a plurality of electrical contacts, the assembly further comprising a plurality of deformable leads, each of the plurality of leads having a plurality of said contacts. A fixed end that is permanently connected to one of the two, and a tip end that is separably fastened to the first surface of the wafer. The chip or wafer assembly according to this aspect of the invention can be utilized in the methods previously described.

[0023]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Some preferred embodiments of the present invention will be described below in detail with reference to the drawings. In the method of manufacturing a component according to the embodiment of the present invention, first, the multilayer sheet 30 is prepared as a manufacturing starting material. Multilayer sheet 30 includes an insulating sheet 34 (FIG. 2), which is a known dimensionally stable polymer film used in the semiconductor industry, including, for example, polyimide films. It is preferably formed. The thickness of the insulating sheet 34 is desirably less than 40 microns, more preferably from about 20 to about 30 microns, and most preferably 25 microns. The upper surface 35 of the insulating sheet 34 is covered with an uppermost layer 36 formed by electrodeposition of copper, and the lower surface 37 on the opposite side of the insulating sheet 34 is covered with a similarly formed lowermost layer 38. The copper layers have a thickness of, for example, about 5 to about 25 microns. In the state at the start of manufacturing shown in FIGS. 1 and 2, the above layers are continuous and substantially uniform over the entire multilayer sheet 30. This multilayer sheet 30
Into a tight and tense state. The multilayer sheet 30 is adhered to the ring-shaped substantially circular frame body 32 while keeping the tension state, whereby the multilayer sheet 30 is
The frame 32 is spread over the central opening. To attach the multilayer sheet 30 to the frame 32, a suitable heat resistant adhesive such as an epoxy resin film is used, and the thickness of the adhesive film is preferably about 10 microns. The material forming the frame body 32 has a large rigidity, and the thermal expansion coefficient is substantially equal to the thermal expansion coefficient of a semiconductor component to which the multilayer sheet 30 and the frame body 32 are attached in a subsequent process. Use a material with a coefficient. In many cases,
Since the material forming the semiconductor component is silicon, the material of the frame body 32 has a thermal expansion coefficient substantially equal to that of silicon. Molybdenum or the like is a suitable material for the frame body 32.

The next step in the process is to reach the bottom layer 38.
Is completely masked with bottom resist 50, while top layer 36 is selectively masked to form the pattern shown in FIG. This selective masking can be accomplished, for example, by applying an electrophoretic resist, selectively exposing the areas to be covered by the resist, and then subjecting the uncured resist material to thermal curing and development of the resist. A general technique of removing may be used. An example of a suitable resist is that sold by Shippley of Wellesley, Mass., USA under the trade name "Eagle Electrophoretic Resist". The company also sells a developer for developing this resist. The pattern includes a large number of terminal formation regions 40, and the number thereof is generally tens of thousands or hundreds of thousands. The large number of terminal formation regions 40 are arranged in a substantially regular pattern, and this pattern includes one or a plurality of regular orthogonal lattices, and the orthogonal lattices are It has a constant pitch P _X in one direction along the surface of the sheet and a constant pitch P _Y in the other direction. In general, P _Y is equal to P _X. As will be explained in more detail below, each of the various subregions of this sheet will eventually be associated with each of the individual chips on the wafer. The respective grids in each such subregion may be continuous with each other or may be separated from each other by blanks or discontinuities in the grid pattern. FIG. 12 schematically shows several partial areas 41, which are separated from each other by a visible boundary line 43. However, such visible boundaries do not always exist. Each terminal formation region 40 includes an annular mask region 42 that defines the outer periphery of the ring 44,
Central mask area 4 defining a central hole in ring 44
Includes 6 and. The ring 44 itself is unmasked. The rest of the sheet is also unmasked, thereby forming a substantially continuous unmasked region 48, which surrounds each terminal formation region 40. At the same time, the ring 44 of each terminal formation region 40 is separated from the ring-shaped mask region 42 of the terminal formation region 40. This continuous region 48 is preferably present over all or most of the sheet. At a predetermined position in the array, the terminal forming area has a different shape (not shown), in which a part of the annular mask area 42 is cut away to remove the ring. 44
Are connected to the continuous region 48. As will be described in more detail later, the terminal formation region having such a different shape is
It forms a potential surface terminal.

Once the above selective masking is complete, the assembly is then electroplated with an etch resistant material. The etch resistant material is, for example, a metal material selected from the group consisting of nickel, gold, and palladium, with nickel being most preferred. The plating thickness is, for example, about 1 to 3 microns, most preferably about 2 microns. The plated metal covers the ring 44 of each terminal formation area 40 as well as the continuous area 48. Subsequently, when the resist is removed by using a general resist removing method, the uppermost copper layer 36 is exposed in the annular region 42 and the central hole region 46. The assembly is then etched using a common copper etching solution such as a CuCl 2 etch. During this etching process
An etch resistant material such as nickel that was previously plated acts as a resist or etch stop to protect the copper layer 36.
On the other hand, in the central hole region 46 and the annular region 42, the copper layer is removed because the etch resistant material is not present, and the pattern shown in FIG. 4 remains, that is, the continuous region 48.
While copper and nickel remain in the ring region 44 and the ring region 44, the upper surface 35 of the insulating film 34 is exposed in the central hole region 46 and the annular region 42 by etching. During the above-described etching procedure, the bottom copper layer 38 is the bottom resist 5
Protected by 0.

In the next stage of this process, holes 52 are formed in the insulating film 34 at locations corresponding to the interior of the central hole area 46 of each terminal formation area. The holes 52 are formed by ablation using radiant energy such as laser light from an excimer laser, and the preferable wavelength of this radiant energy is 308 nm. A mask 54 having a plurality of holes corresponding to the central holes 46 of the respective terminal forming regions is placed on the assembly by aligning the plurality of holes of the mask 54 with the positions of the respective central holes 46. Radiant energy is applied through the plurality of holes in the mask 54. The mask 54 is formed of a heat resistant material such as molybdenum. Most of the radiant energy is absorbed by the mask 54. However, the copper and nickel ring 44 surrounding the central hole 46 also functions as a mask, limiting the ablated region of the insulating sheet to the region inside the central hole 46.

The next step in the process is to perform an electroless plating process to line holes (ie, vias) 52 with a layer of copper via liner 56. This electroless plating treatment is, for example, a seeding or pretreatment using an electrodeposition accelerator such as a palladium salt and a subsequent treatment for contacting the electroless plating solution itself. Copper layer 5
6 is the lowermost copper layer 3 extending to the lower end of each hole 52.
8 and is formed so as to cover the upper surface of each ring 44, that is, the surface facing upward. Thus, the blind via liner formed by this copper connects each ring 44 to the bottom copper layer 38. The preferred thickness of the layer formed by this copper is about 10 microns. During this process, the bottom resist 50 remains formed so that no copper is deposited on the surface of the bottom copper layer 38 opposite the sheet 34. Upon completion of the above of this process, the multilayer sheet 30 has a plurality of ring-shaped terminal structures 44 on the upper surface 35 thereof.
And a blind via liner 56 extending through the insulating sheet is formed in the center of each of the ring-shaped terminal structures. Also, a substantially continuous copper conductive potential surface 48 extends over the top surface of the sheet. Each of the ring-shaped terminal structures 44 is surrounded by this continuous layer 48, provided that the annular region 4 is substantially free of conductive material.
It is insulated from this continuous layer 48 by 2 (FIG. 3). However, in a potential surface terminal (not shown) formed in a different form from the above, the ring-shaped terminal structure 44 is electrically connected to the continuous layer 48. Subsequently, nickel is electroplated on the top surface made of copper to a thickness of about 2 microns. The plating current for this plating is supplied to the lowermost copper layer 38,
It is guided to the terminal 44 through the via liner 56. The plating current flows to the potential surface via the potential surface terminal.
On top of this nickel layer is further electroplated a gold layer, the preferred thickness of this gold layer being about 0.5 micron. These nickel and gold layers form a corrosion resistant protective coating over the copper surface and edges.

In the next stage of this process, the bottom resist 50 is removed and the top resist 58 is applied. The upper surface resist 58 is applied so as to cover the entire area of the upper surface of the insulating sheet 34, and thus also covers the entire surfaces of the ring structure 44 and the continuous conductive region 48. Then, a pattern is formed on the lower surface of the lowermost copper layer 38 exposed by this, and the resist is applied, exposed, and cured and developed in the same manner as described above. This patterning allows the plurality of lead regions, each of which is generally dumbbell shaped and arranged in an array, to remain uncovered by the resist, while the rest of the bottom layer 38 is covered by the resist. Leads 60 are individually formed in each of the plurality of regions by forming a nickel layer 6 on the surface of the lowermost copper layer 38 by electroplating.
2 (the thickness of the nickel layer 62 is typically about
5 microns), and further electroplating a gold layer 64 on the nickel layer (the thickness of the gold layer is typically about 5 to about 25 microns, and may be about 20 microns). preferable). Then, the resist used for forming the lead 60 is removed.

Each lead 60 has a substantially circular bulge portion 66 (FIG. 8) at the terminal side end, and a substantially circular bulge portion 68 at the tip side end, which is somewhat smaller than that. , And an elongated strip portion 70 having a relatively narrow width and extending between the bulges. The leads 60 are arranged in a regular orthogonal lattice pattern, and their pitch and arrangement are the same as the pitch and arrangement of the lattice of the plurality of ring-shaped terminals 44 formed on the upper surface. Then, each circular bulge 66
One of the plurality of terminals 44 formed on the upper surface,
That is, it is located concentrically with the via 56 formed in the terminal. The next step in the process is to deposit conductive bonding material in the form of spots 72 on the exposed surface of the distal end regions 68 of the leads. An example of a suitable bonding material is a tin layer 74 (a preferred thickness of this layer is about 10 microns) and an anti-oxidation gold layer 76 over the tin layer.
(The preferred thickness of this layer is about 2 microns). Here again, first, the exposed surface of the lead is coated with a resist. Subsequently, a pattern is formed by using a photographic method, and a development process is performed to form holes in the resist coating layer where the bonding material is attached in the form of spots 72. And each of those spots 72
Then, a conductive bonding material is deposited by electroplating.
Other bonding materials may be used and other deposition methods may be employed, as described in more detail below.

In the next stage of this process, the top resist 58 is left untouched and the bottom copper layer 38 is sub-etched using a CuCl etch solution. Gold layer 6
4 and nickel layer 62 are substantially unaffected by this etch solution and thus act as an etch mask. The exposed area of the lowermost copper layer 38 is corroded and dissolved, and the side edges of the leads 60, that is, the side edges of the gold layer and the nickel layer are corroded and dissolved. As this process proceeds, the exposed areas of copper layer 38 are removed, while the underlying portions of leads 60 are gradually removed. The amount of removal, that is, the amount of undercut, that is removed inward from each side edge of the lead 60 increases with time. By appropriately selecting the processing time of this process, the undercut regions that have proceeded from the side edge portions on both sides of the strip-shaped portion 70 are connected to each other, whereby the strip-shaped portion 70 is separated from the insulating sheet 34 with a gap 78. To do so. However, since the diameter D _tip of the bulged portion 68 at the tip end side is made larger than the width W _S of the strip portion 70, the etching amount of the copper layer 38, that is, the amount of undercut, is bulged at the tip side end portion. It does not reach the center of the portion 68. Then, in order to finish the etching process before reaching the center, a small button portion 8 made of copper extending from the bulged portion 68 at the tip end portion to the bottom surface 37 of the insulating sheet 34.
0 remains. It is desirable that the diameter of the button portion 80 be significantly smaller than the diameter of the bulging portion 68 at the tip end. Also, make the diameter of this button part approximately 50
It is desirable that the surface area of the portion where the button portion comes into contact with the lower surface 37 of the insulating sheet 34 is made extremely small by making the thickness below micron. Adhesive force is directly proportional to the surface area of the contacting part, and this adhesive force is due to gravity at the tip end side of the lead and acceleration force in normal careful handling.
It is sufficient if it is strong enough not to be separated from the lower surface of the insulating sheet. The adhesion between the button portion 80 and the insulating sheet is designed to be easily removed during the process described below.

Since the undercut progresses inward from the side edge of the bulging portion 66 at the terminal side end due to the above-described etching process, as a result, the undercutting with respect to the bulging portion 66 at the terminal side end of each lead is performed. Concentric approximately circular terminal side button part 8
2 is formed. Each terminal-side end button portion 82 is also concentric with the corresponding via 56 and is connected to the via liner by metal bonding. The terminal-side end button portion 82 is further provided with a bulge 6 at the terminal-side end of the lead.
6 is also connected by metal bonding. Therefore, each lead is provided with an electrically continuous, integral, terminal-side end structure connected by metal bonding, and this terminal-side end structure has a bulge portion 66 at the terminal-side end, A button portion 82,
The via liner 56 and the ring-shaped terminal 44 extend through the insulating sheet from the terminal-side end portion 66 of the lead to the upper surface of the insulating sheet. Each such terminal-side structure holds the lead terminal-side end 66 securely in place. Following the above steps, the top resist 58 is removed and all metal components including terminals or rings 44, via liners 56 and leads 60 are electrolessly plated with a thin gold coating. cover.
The desired thickness of this gold coating is about 1 micron.
This gold layer formed by electroless plating covers all exposed metal surfaces and edges, including those exposed by etching the bottom copper layer 38. It is a thing.

A fiducial mark such as the transparent region 83 in which the metal material is not present, which is schematically shown in FIG. 12, is simultaneously formed by the above plating and etching steps to be performed for forming other components. I am trying to do it.

In this method, the parts are completed when the above is completed. At this time, the insulating sheet 34 is still fixed to the frame body 32 (FIG. 1) and is maintained in a taut state. At this time, the insulating sheet 34
Form an insulative connector body. Although this component can be handled, shipped, or stored in this state, it may be directly attached to the microelectronic element. The actual dimensions of each component of this part will depend on the microelectronic device in which it is used. However, for the contact pitch setting dimensions that are widely used at present, the following dimensions shown in the table below can be used (all dimensions are in micron).

TABLE 1 TABLE I Pitch _{(P X, P Y) 1000} 500 300 200 inside diameter (d _i) of the ring-shaped terminals 44 100 100 75 outside diameter of 50 terminals (d _o) 250 250 150 150 uppermost copper layer Thickness of 36 10 10 5 5 Diameter of the bulging portion 66 at the terminal side end 150 150 125 100 Thickness of the lowermost copper layer 38 15 10 5 5 Diameter of the bulging portion 68 at the tip side end (D _tip ) 100 100 75 50 length (L _l) (from the center of the bulging portion 66 of the terminal end to the center of the bulged portion 68 of the distal end portion) 1000 750 500 300 width of strip portion 70 (W _S) 35 25 20 15

A mounting method according to still another embodiment of the present invention is a component 84 manufactured and completed as described above, that is, an insulating sheet or connector having a frame 32 and a plurality of leads and terminals. A method of attaching the body 34 and the body 34 to the semiconductor wafer 86 (FIG. 11). The wafer 86 includes a large number of independent chip areas 88, each of which includes a number of elements that form one semiconductor chip. Each of the individual chip areas 88 corresponds to each of the areas 41 (FIG. 12) of the component 84. The wafer 86 further comprises a large number of contacts 90, which are mounted on the upper surface 92 of the chip (FIG. 13). This component 84 is attached to the lower surface 3 of the insulating sheet 34.
7 is placed face down, that is, facing the upper surface of the chip, and mounted on the upper surface of the wafer 86. A vacuum holder 94 having a number of holes for engaging the chips is disposed below the wafer 86, and the wafer 86 is held by the negative pressure supplied through the holes 96. Fixed to.

The component 84 is similarly engaged and held by the upper holding base 98. The upper holding table 98 includes a transparent plate 102, which is preferably made of quartz, and the transparent plate 102 has a metal ring 1 around the transparent plate 102.
03 is fitted. The connecting part 84 is an upper holding base 98.
In this case, an O-ring (not shown) is interposed between the circular frame 32 of the connecting part 84 and the ring 103. The negative pressure is supplied to the space between the connecting part 84 and the transparent plate 102 via the supply port 100, whereby the connecting part 8 is connected.
The flexible sheet of No. 4 is firmly engaged with and held by the transparent plate 102.

With the connecting part 84 and the wafer 86 engaged and held by the upper holding table and the lower holding table, the connecting part 8
Align 4 with wafer 86. To this end, one or both of the upper holding base 98 and the lower holding base 94 are moved in the horizontal direction, that is, the XY direction, and one of the holding bases is rotated about the vertical axis,
The connection component 84 and the wafer 86 are caused to swing relative to each other in the direction of the arrow θ shown in FIG. These movements can be controlled by a micrometer screw type adjustment mechanism (not shown). When performing this process, the component 8 is observed by observing the fiducial marks 83 formed on the component 84.
The position relative to the four chips can be modified. Since the insulating film 34 of the component 84 is transparent, the surface of the chip 88 is covered with the transparent plate 102 and the insulating film 3.
4 and can be observed. Therefore, the component 84
The reference mark 83 and the relative position of the chip and the chip 88 can be displayed by an observer or by a machine vision system.
Can be detected.

Fine alignment of the connecting components 84 to the wafer (ie, the chip) aligns the distal end 68 of each lead 60 with the corresponding correct contact 90 on the wafer. This precise alignment, even if the part is a relatively large part that covers almost the entire wafer,
It can be achieved over the whole area of the part. For example, the diameter of the wafer and components may be about 10-30 cm. Even in the case of such a large area, the tip end portions of the leads can be aligned with the contacts with the required accuracy over the entire area. There are several factors that contribute to such fine alignment. First, the insulation film 34 is continuously held in tension by the same frame 32 during the entire lead formation process and alignment process, so that the leads are not displaced from their proper positions. Further, the tip end portion 68 of the lead is always fixed to the insulating film by the button portion 80 (FIG. 10) from the time when the lead formation is completed to the time when the alignment process is completed. Therefore, the tip side end portion 6 of the lead is
8 does not shift relative to the insulating film.
Further, since the thermal expansion coefficient of the frame body 32 is close to the thermal expansion coefficient of the wafer, even if the temperature fluctuates during the execution of the alignment process, and during the subsequent steps described later, Even if the temperature changes, the position of the insulating film does not shift with respect to the wafer. Furthermore, the connection component 8 is used to form the reference mark 83.
The fiducial marks 83 are precisely aligned with the leads because they are formed simultaneously in the etching and plating processes used to form the other four components.

While the connection component 84 and the wafer (ie, the chip) are precisely aligned, the upper and lower holding bases are moved toward each other to superpose the connection component 84 and the wafer. Subsequently, a compressed gas is introduced between the transparent plate 102 of the upper holding table and the connecting component 84, and the compressed gas is made to act on the upper surface of the sheet 34 as shown by the arrow in FIG. This urges the sheet 34 downward, i.e., toward the wafer, so that the bonding material 72 deposited on the distal end of each lead is pressed against the contacts 90 aligned with it. Even if the connection part 84 or the wafer does not maintain the flatness, the action of the pressurized gas does not apply any undesirably large local stress to the connection part 84 (more specifically, each of the plurality of leads). The bonding material 72) at the tip end and the plurality of contacts can be brought into close contact with each other over the entire surface of the wafer.

The assembly thus assembled is heated, while maintaining its gas pressure, to a temperature sufficient to activate the bonding material at spot 72, thereby causing the tip end of the lead and the wafer The bond portion 104 (FIG.
4) is formed. This heating step preferably maintains the assembly at a temperature of about 240 ° C. for about 150 seconds. The tin present at each spot 72 undergoes interdiffusion with the surrounding contacts 90 as well as the gold contained in the lead itself, forming a liquid layer. This liquid layer also elutes gold from the contact pads 90 and the lead end 68. As the gold component ratio increases, the freezing point temperature of this composition increases. Finally, the bond part solidifies. Following this bonding process, an annealing process is performed. The annealing process is maintained at a temperature sufficient to substantially allow interdiffusion between gold and tin, typically at a temperature of about 180 ° C for about 10 minutes. This further increases the gold content of the bond portion and further strengthens the bond portion. Throughout the entire process, the tip end 68 of the lead is maintained in a state of being connected to the lower surface 37 of the insulating sheet 34 via the button portion 80. for that reason,
The tip end 68 of the lead will not be displaced from its original position during the bonding process.

As the wafer 86 and the connecting components 84 are heated during the bonding process, the insulating sheet 34 and the potential surface layer 48 tend to expand at a rate greater than that of the wafer. However, since the insulating sheet and the potential surface layer are maintained in a state of being tensioned by the frame body 32, the thermal expansion of the insulating sheet and the potential surface layer eventually reduces the tensile stress due to the tension. Stay The actual movement amount of the components formed on the insulating sheet 34 and the potential surface layer 48 is substantially equal to the thermal expansion amount of the frame body 32. Moreover, the frame 32
Has a coefficient of thermal expansion approximately equal to that of the wafer 86. As such, the components of connecting piece 84 remain aligned with the components of the wafer during the heating process.

At the stage when the above is completed in this process, the state shown in FIG.
Of the terminal structure 66, 82, 5
It is firmly joined by 6 and 44 to the first element of this assembly, the insulating sheet 34. Each lead is further rigidly bonded at its second end, the distal end 68, to the second element of the assembly, the wafer 86. The tip side end portion 68 of each lead is offset from the lead terminal side end portion 66 in the first horizontal direction parallel to the lower surface 37 of the sheet 34, that is, in the direction D ₁ from the left side to the right side shown in FIG. are doing. The same direction is also shown in the bottom view of the lead (FIG. 8). D ₁ has the same direction over the entire area of this connecting component. That is, the tip end of each lead is offset in the same direction from the terminal end of the lead.

In the next subsequent step of the process, the holding table 98 is removed and replaced by a metal vacuum holding table 105.
The holder 105 has a plurality of holes 107 formed therethrough. Again, the holding table 105 and the holding table 9
A negative pressure is supplied to 4 and 4 to firmly hold the connection component 84 provided with the insulating sheet 34 and the wafer 86 on their holding bases. Subsequently, by moving one or both of the holding bases, the holding bases are moved relative to each other, whereby the holding base 9 is moved.
4 and thus the tip (second element) 86 in the vertical direction,
From the holding table 105, and thus the insulating sheet (first element) 3
4 is moved in the away direction, that is, in the direction indicated by the arrow V ₁ . At the same time, the holding table 94 and the wafer (second element) 86 are simultaneously moved in the horizontal direction D ₂ relative to the holding table 105 and the insulating sheet (first element) 34.
, That is, to the left in FIG. In other words, the second element (wafer) 86, the contact 90,
The horizontal component of the movement of the tip end portion 68 of the lead joined to the contact 90 is set to the second direction D ₂ opposite to the first direction (first offset direction) D ₁ .
Therefore, the second element 86 and the distal end 68 of the lead are
The arcuate path A relative to the first element (insulating sheet) 34 and relative to the terminal end portion 66 of the lead.
_Try to draw ₂ . The amount of vertical movement is generally about 100 to 500 microns, and the amount of horizontal movement is approximately equal to the amount of vertical movement.

The same movement as this is performed for the second element (wafer).
In other words, it is possible to describe the relative movement of the first element (insulating sheet) 34 and the terminal end 66 of the lead with respect to 86 and the tip end 68 of the lead. If the standard framework is changed in such a manner, the first element is moved in the horizontal direction in the first offset direction D ₁ relative to the second element, and at the same time, in the vertical direction, the first element is moved. The two elements may be moved away from each other so that the first element draws an arcuate path A ₁ relative to the second element. However, no matter what the term is used, the net effect of the relative movement of the two elements is that the tip end 68 of each lead approaches the terminal end 66 of that lead in the horizontal direction. It moves in the vertical direction and away from the terminal side end portion 66 of the lead, which causes each lead to move in the direction shown in FIG.
As shown in FIG. 5, it is formed into a structure having a height in the vertical direction and bent into a substantially S shape.

This S-shaped lead is first made of the lead 60.
Is bent in a direction perpendicular to the upper surface and the lower surface of the ribbon portion, that is, the belt-shaped portion 70. In other words, the bending of the strip portion (ribbon portion) 70 is in a direction perpendicular to the main surface of the ribbon portion, that is, the original upper surface and lower surface of the ribbon portion. Further, as shown in FIG. 15, each S-shaped structure has a first bend at a position proximate to the terminal end 66 of its lead, and thus at a position proximate to the first element or connector body 34. 111, at a position close to the tip end side 68 of the lead,
Therefore, the second bent portion 113 is provided at a position close to the contact 90 and the second element (wafer) 86. Bend 113
Is bent in the opposite direction to the bent portion 111. Of the lead, the portion forming the tip end portion 66 and the portion forming the terminal end portion 68 maintain their original extending directions, and therefore, The original upper and lower surfaces of the lead, i.e. the main surface, are
They remain facing upward and downward, respectively. Although only one lead is shown in FIG. 15, in this lead forming process, all leads are formed simultaneously. Therefore, all leads exhibit the same S-shaped bend, yet all S-leads extend parallel to one another and in the same orientation.

During the execution of this lead forming process, the tip end portion 68 of the lead is separated from the bottom surface 37 of the insulating sheet. The copper button portion 80 is easily separated. The force required to deform all the leads is the insulation sheet 34
Is a force applied from the atmospheric pressure existing between the lower surface 37 and the upper surface 92 of the wafer 86. The force required to bend each lead depends on the actual size of the lead,
A reasonable estimate of the force required is about 1 lead.
It is 2g. The force obtained from atmospheric pressure is simply given by the product of standard atmospheric pressure and the area of the wafer or connecting components. When the force obtained from the atmospheric pressure is insufficient, the wafer 86 and the insulating sheet 34 may be temporarily bonded to their respective holding bases using a temporary adhesive such as wax. Alternatively, the outer periphery of the holding base can be sealed with a gasket, and the pressure of a fluid such as a gas exceeding atmospheric pressure is introduced between the insulating sheet 34 and the wafer 86, and those elements are connected to the respective holding bases. There is also a way to increase the force to be applied and thereby increase the force available to bend the lead.

Following the lead forming step, the insulating sheet 34 and the wafer 86 are in their post-movement positions, and yet they are still in the holder 105 and the holder 9.
4, the insulating material 108 having fluidity and curability is attached to the insulating sheet 34 and the wafer 86.
Inject between and. The lower surface 37 of the insulating sheet 34, which is the connector body, has substantially no holes other than the holes blocked by the terminal structure such as the via liner 56.
Therefore, this fluid insulating material is trapped between the insulating sheet 34 that is the connector body and the wafer 86, and does not cover the terminal component 44 provided on the upper surface of the insulating sheet 34. It is preferable to use a material having a very low viscosity in the uncured state and having a good wettability with respect to the material of the insulating sheet and the material of the wafer as the fluid insulating material. Effectively fills all the space between the insulating sheet and the wafer, and easily penetrates between all the leads 60. As the insulating material 108, a material that forms a material such as an elastomer that is easily deformed after being cured is selected. An example of a suitable flowable insulating material is Dow Corning, Inc. of Midland, Michigan, U.S.A.
It is a curable silicone sold under the product name "SILICONE" and other curable silicones from Shin-Etsu Silicones of America. In order to fill the fluid insulating material, a method of injecting by applying pressure from the outside may be used, or a method of waiting for the space to be filled only by capillary action without applying pressure from the outside. There is also. Once the flowable insulating material has been injected, it is cured there. Depending on the composition of the flowable insulating material, some may spontaneously cure at room temperature, some require heating, and some require irradiation with radiant energy. A typical cure cycle for the silicone material exemplified above is about 160 ° C. and requires about 20 minutes.

Once cured, the assembly now includes the top insulating sheet 34 and the easily deformable insulating layer 1.
08 and a wafer 86, and further provided with a terminal 44 connected to a contact 90 by a lead 60, which assembly is removed from the holder. Subsequently, the potential surface layer 48, which is a continuous layer formed on the upper surface of the insulating sheet 34, is generally soldered to leave the openings only at the plurality of terminals 44 and shield the other portions from the solder. Cover with mask layer 110. Then, the solder balls 11 are attached to the terminals 44 by using a solder ball attachment method similar to that used in a general flip chip bonding method.
6 is attached. Each solder ball 116 comprises a spherical core 112, preferably formed of copper or a copper alloy, and a coating layer 114 of solder, such as lead-tin solder. For example, the solder balls may be a 200 micron diameter spherical core 112 coated with a layer 114 of 63% lead-37% tin solder to a thickness of 50 microns. A molybdenum sheet (not shown) having a plurality of holes arranged in a pattern corresponding to the arrangement pattern of the plurality of terminals 44 is aligned and placed on the plurality of terminals 44, and each of the molybdenum sheets is placed. Put the solder balls in the holes. This aligns each solder ball with one terminal 44, after which the appropriate flux is applied. The entire assembly
A temperature sufficient to melt the solder, for example about 200
Heat to ° C and hold at that temperature for about 40 seconds. The solder flows and joins the terminals 44 as shown in FIG. After this, the flux used for soldering is cleanly removed from the assembly.

Following this soldering step, a cut-and-sew is used to cut the wafer 86, the insulating sheet 34, and the flexible sheet along the boundary line 43 (FIG. 12) between the various regions of the insulating sheet 34. The insulating layer 108 and the insulating layer 108 are cut at the same time. The boundary line 43 indicates the plurality of chips 8 that form the wafer 86.
It is aligned with the line that separates the eight. Therefore, by this cutting step, individual units as shown in FIG. 18 are obtained, and each of these units has the insulating sheet 3
4 region 41, a portion of the insulating layer 108, and a chip 88 of one of the wafers 86. Terminals 44, 116 with a plurality of solder balls in each area
Are arranged in a grid, and the pitch of the grid is substantially equal to the pitch of the contacts on the chip. The surface area of the entire unit in the horizontal plane is as large as the surface area of the single chip in the horizontal plane.
After this, each unit can be tested individually, for example, by pressing the test fixture and one unit against each other, with a plurality of solder balls on the whole unit. The terminal may be brought into simultaneous contact with a plurality of temporary contacts or probes of the test fixture. Due to the deformability of the insulating material 108 and the flexibility of the insulating sheet 34,
Simultaneous contact to the fixture is now possible with high reliability. The same procedure can be employed for long term test operations commonly referred to as "burn in".

After the unit has been tested and, if necessary, further burned in, the unit can be permanently mounted on a substrate such as a circuit board or chip package, May contact the solder balls with the contact pads on the substrate and heat the assembly to reflow the solder. This soldering method itself may be the same as the soldering method in the mounting process using the flip chip method or the surface mounting method. For example, there is a method in which each of the solder balls on the unit is placed on a pad formed of a solder paste in which solder particles are dispersed in a flux, which is widely used in the surface mounting method. The unit is so compact that it is about the same size as the original chip, so it can be mounted very close to other chips, thus forming a very compact circuit assembly. You can Even after installation, this unit offers significant operational advantages. That is, the lead 60 having flexibility and the insulating sheet 34 having flexibility
And the flexible and easily deformable insulating material 108, the terminals 44 and the solder balls 116 attached to the terminals are relative to the corresponding contacts 90 on the chip. Can be moved to. Due to this flexibility, a difference in the amount of thermal expansion or contraction between the chip and the circuit board or substrate on which the chip is mounted can be tolerated, and large stress is applied to the solder joint. You don't have to.

As a connecting part according to yet another embodiment of the present invention, there is a connecting part having a structure similar to that described above, but provided with a reinforcing sheet 57 (FIG. 19). Covers the upper surface of the insulating sheet 34, and thus covers the terminals 44 'and the potential surface layer 48' provided on the upper surface of the insulating sheet 34.
The reinforcing layer 57 extends over the entire upper surface of the insulating sheet 34. The insulating sheet 34 and the reinforcing layer 57 are both fastened to a ring-shaped frame body (not shown) similar to the ring-shaped frame body 32 described above with reference to FIG. Is desirable. The mounting of the reinforcing layer 57 is
This is preferably performed after forming the components provided on the upper surface of the terminal 44, the potential surface layer 48 ′, and the vias and via liners accompanying them. To attach the reinforcing layer 57,
For example, a peelable pressure-sensitive adhesive may be used and attached to the insulating sheet and other structures on the insulating sheet. Regarding the lead 60 'provided on the lower surface 37' of the insulating sheet and the components attached thereto, a reinforcing layer may be attached before forming them. The reinforcing layer preferably has a coefficient of thermal expansion equal to that of the wafer. If the wafer is made of silicon, molybdenum is one of the preferred materials for this reinforcing sheet.
The stiffening layer is preferably in the form of a relatively thin sheet or foil and has a thickness of about 25 microns and about 250 microns.
It is preferably between micron. During the mounting process for mounting the connection component to the wafer, fluid pressure is applied to the reinforcing layer, thereby maintaining the state in which the fluid pressure is applied to the insulating sheet 34 'through the reinforcing layer. This stiffening layer resists stretching and deformation of the insulating sheet, thereby helping to maintain the finely aligned leading ends of the leads and the contacts on the wafer. The reinforcing layer may be further provided with an opening (not shown) at a position corresponding to the position where the reference mark is formed on the insulating sheet so that the reference mark can be observed through the opening. The reinforcing layer is removed after the wafer is completely attached. It is subjected to a heat treatment for deactivation so that the pressure-sensitive adhesive is deactivated. As a modified example of this method, there is also a method of equipping the reinforcing layer as a permanent layer embedded inside the insulating layer. When such a permanent layer is used, openings are formed in the permanent layer at positions corresponding to the plurality of terminals, and the vias extend through the openings.

As a further modification of the invention, it is possible to make the connecting member with a smaller number of areas and apply it to only a part of the wafer. Furthermore, there is also a method of cutting the wafer into individual chips before bonding with the connecting member. In this case, the step of bonding the end portions on the tip end side of the leads is executed for each chip. In such a configuration, when manufacturing the connection component, each has an insulating sheet in an area of a size of one chip,
It may also be manufactured as a separate unit, each with the leads required to make a connection to a single chip.
Such individual connection components may be completely separated from each other, or they may be provided in the form of a semi-continuous tape or sheet, suitable for bonding one after another to a plurality of individual chips. You may do it. In the case of adopting this type of structure, after the bonding is completed, the individual chips and the individual portions of the insulating film are moved relative to each other in the same manner as described above, and the leads are moved. Perform molding. If the whole wafer is processed at the same time, it makes the process very economical and simple. For example, the unit can be formed by cutting the insulating sheet and the wafer together with one cutting. On the other hand, in the processing targeting a unit having the size of one chip or the processing targeting a unit containing only a small number of chips, the tip end side of the lead and the contact on the chip are aligned. It is easy to perform, and the loss when a failure occurs during the execution of the process can be greatly reduced.

Yet another modification according to the present invention is that a microelectronic component other than a semiconductor wafer or a chip can be attached to a connecting component, and it can be used to perform a lead forming process. Is. For example, a circuit board or module with contacts can be attached to connecting components in substantially the same manner as for wafers and chips as described above.

FIG. 20 shows a connection part according to another modification.
It was shown to. The structure according to this modification is the insulating sheet 134.
And a plurality of terminals 144 are provided on the upper surface 135 of the insulating sheet 134. The lead 160 includes an elongated strip structure 170.
Extends under the lower surface 137 of the insulating sheet. Each lead has a terminal-side end portion 166 having a terminal-side end portion structure, and the terminal-side end portion structure has an insulating sheet 13.
4 extends from the lower surface to the upper surface and is connected to the corresponding terminal 144. The above elements are shown in FIG.
~ It may be similar to that described above with reference to Figure 19. For example, the strip 170 of each lead
Keeps a gap between the insulating sheet and the terminal-side end structure and the point-like contact portion of the lead end-side end 168,
It may be connected to an insulating sheet.

The connecting part shown in FIG.
This positioning sheet is made of a soluble sheet-shaped material such as a styrene polymer or copolymer. Each lead is provided with a tip structure 181. This tip structure 181 is a blind via or the like, extends through the positioning sheet 180, and its tip has a head that spreads outward. Is forming. The head of this tip is present on the lower surface 182 side of the positioning sheet 180, in other words, the side of the positioning sheet 180 opposite to the side on which the leads are present, that is, the uppermost sheet 134 which is an insulating sheet is present. It exists on the opposite side to the side that does. Also in this case, in the initial state before deformation shown in FIG. 20, the tip-side end 168 of each lead is offset from the terminal-side end 161 of the lead in the first horizontal direction D ₁ .

In the molding process, the insulating sheet 13
4 and the positioning sheet 180 are engaged with the holding table 198 and the holding table 199, respectively. The holders are moved so that they move relative to one another, thereby holding holder 199 and positioning sheet 180 (and thus lead end 168), insulating sheet 134 and lead terminals. It is moved in an arc shape relative to the side end portion 166, and is moved to the position shown in FIG. Position the positioning sheet 180
8), relative to the terminal side end of the lead, while moving in the second horizontal direction opposite to the first direction D ₁ ,
It is also moved vertically downward, which is a direction away from the insulating sheet 134 and the terminal side end portion 166. Again, the tip end of each lead is moved horizontally toward the lead terminal end, but vertically moved away from the lead terminal end. West,
As a result, the lead is deformed and bent into an S-shape having a vertical height. Again, all S
The V-shaped lead is bent in a direction perpendicular to the main surface of the ribbon forming the lead. Furthermore, those S
The V-shaped leads extend parallel to each other.

Following this step, a flowable and curable insulating material 118 is introduced between the insulating sheet 134 and the positioning sheet 180 and cured in substantially the same manner as previously described. When the curing is complete, remove this connecting piece from the holding table. Subsequently, as shown in FIG. 22, the positioning sheet 180 is removed (preferably a solvent is used for removal) to expose the lower surface 119 of the insulating support layer 118. In this state, the insulating support layer 118 surrounds and supports the leads 160. The tip structure 181 of each lead is exposed on the lower surface of the insulating support layer. A conductive bonding material 170 is attached to the tip structure 181, and an insulating adhesive 173 is applied to the entire lower surface 119 of the insulating support layer 118. The insulating adhesive is, for example, a so-called flash cure adhesive, the activation temperature of which is above room temperature but below the temperature at which other components of the assembly may be damaged. Rancho Doming, CA, USA, is an example of a suitable solventless instant cure adhesive.
Ablestick Electronics Materials and Ad located in uez
There is a product sold by hesives under the product name "ABLEBOND 967-3". The eutectic alloy type bonding material described above can be used as the conductive bonding material 170, and further, a thin gold layer may be formed to prevent oxidation. When the above is completed, this connecting component is ready for use.

To explain the method of use, the lower surface 119 of the insulating support layer is used as the contact mounting surface 2 of the semiconductor chip, wafer, or other microelectronic device 202.
00, the distal ends 168 of each of the plurality of leads (and thus the tip structure 181 and conductive bonding material 170) were aligned with the plurality of contacts 204, and then so combined. Heat and press the assembly,
By the pressure, the lower surface 119 of the insulating support layer 118 is brought into contact with the contact mounting surface 200, so that the tip end portions of the leads are brought into contact with the contacts. Under this condition, the adhesive 173 forms a void-free interface between the insulating support layer 118 and the microelectronic device 202, and also between the leads and the contacts of the microelectronic device. The conductive bonding material forms bonds that are connected by metallurgical bonding to form electrical connections between them, thereby connecting the terminals 144 to the contacts. The resulting assembly can be mounted on a circuit board or other substrate in the same manner as the previously described assembly, with similar advantages. Again, this connection part is manufactured as a large part, mounted on all the chips of one wafer at the same time, and then the chips are cut out from the wafer and the individual parts of the insulating sheet are cut off from each other to separate the individual units. Can be formed. Alternatively, it is also possible to manufacture this connecting component in the size of one chip, cut the chip from the wafer, and then attach the connecting component to each chip.

As another modification, the positioning sheet 1
The 80 may be left as it is as a part of the finally completed connection component. In this case, positioning sheet 1
Preferably, 80 is formed of an insulating material that is flexible and similar to the material used for top sheet 134. An adhesive coating layer may be formed on the lower surface of the positioning sheet 180 to help form a void-free interface between the positioning sheet and a microelectronic element such as a chip. As still another modification, the first element itself, which carries the terminal-side end of the lead, may be formed of a thick substrate having rigidity, and the internal conductor may be connected to the terminal-side end of the lead. Good. In this type of configuration,
A chip, which is a microelectronic element, is directly connected to a substrate via a lead, and in the lead framing molding process, the microelectronic element is moved relative to the substrate. In the structure and method described above, the fluid insulating material used to form the deformable layer between the connector body, which is an insulating sheet, and the chip or the microelectronic element is omitted. You can This allows the connector body, which is an insulating sheet, to be elastically supported above the chip or microelectronic element by the leads themselves.

As a further modification, the second element for moving the distal end portion of the lead is similar to the holding table in which the second element is temporarily engaged with or joined to the distal end portion of the lead. It can also be a structural tool. When the lead moving (molding) process is completed, the tool may be removed from the tip end of the lead.

The method of connecting the terminals provided in this connection component to the substrate is not necessarily limited to the soldering method. Other methods can also be used,
For example, a eutectic alloy type joining method, a diffusion type joining method, a method of physically maintaining the terminal in contact with the contact, or a method of using a socket member or the like is also possible. The terminal form is
It may be changed to a form suitable for those methods. As the eutectic alloy-type bonding material, various materials can be used in addition to the gold-tin composition which is a suitable material. For example, gold can form a eutectic alloy composition with germanium, silicon, tin, or a combination thereof. Methods that can be used to attach the tip ends of the leads to the contact points of the wafer or other microelectronic components include, other than eutectic alloy bonding methods, for example, diffusion type methods without liquid phase formation. There are a joining method, a soldering method, a method of using a polymer composition in which a metal is dispersed, and the like. As the method that can be adopted for attaching the bonding material, in addition to the plating method, for example, a dipping method in which the tip end of the lead is dipped, a printing method using a silk screen, and a paste are applied. There are ways. It is also possible to make the place to which the conductive bonding material is attached not the tip end side end of the lead but the contact point of the microelectronic element. Alternatively, a bonding method that does not particularly require a bonding material can be adopted. As a specific example of such a bonding method, there is a method in which the tip end side end portion of the lead is joined to the contact by thermosonic bonding or thermocompression bonding. As the material of the lead, silver, copper, brass or the like can be used in addition to gold. Various metallic materials other than copper and nickel can be used as materials for the terminals, conductive layers, and via liners.

As shown in FIG. 23, each lead 260
Is connected to a terminal structure 256 projecting upward from a connector body (not shown) which is an insulating sheet, and its end portion 268 is connected to the tip end portion 268.
And a bonding material 2 for bonding the tip end to the contact point.
72 or any other suitable provision may be provided. These components can be similar to the corresponding components in the structure described above. The structure of FIG. 23 includes a bent strip 270 connecting the tip end 268 of the lead and the terminal end 266. In the undeformed state of the lead drawn by the solid line in FIG. 23, which is the initial state, the tip end, the terminal end, and the strip 270 are all substantially on the same plane, and the connector body Is in contact with or close to the lower surface of the. From this state, the tip end side 268,
Bonding to contacts provided on microelectronic devices such as wafers and chips, which is shown in FIG.
The connection process similar to that described with reference to FIGS.

After the bonding is completed,
The microelectronic element is linearly moved vertically downward relative to the connector body insulating sheet (and thus relative to the lead terminal end 266). As a result, the terminal side end portion 268
Will have a similar unidirectional movement vertically downward, ie away from the first element (insulation sheet). The direction of this relative movement is shown by the arrow V ₁ 'in FIG. By this downward movement of the tip end portion of the lead, the belt-shaped portion 270 that has been bent in the initial state is brought close to a straight line as schematically shown by a broken line 270 '. Therefore, after the completion of this movement, the lead is closer to a straight line than the S-shaped lead described above. However, it is necessary to ensure that the leads are not completely straightened during the course of this transfer process, so that the leads do not pull the tip end and the terminal end from the insulating sheet and the microelectronic element. Is preferred. The method of using a lead having a band portion that is bent in the initial state can further incorporate the compound movement described above with reference to FIG. In such a case, if the relative movement includes movement in the horizontal direction D ₂ ′ that brings the second element and the tip end 268 closer to the terminal end 266, then the pre-curved band 270 is removed. To be prepared
The bent strip 270 can have a bent shape 270 ″.

The plurality of leads bent in the initial state as described above can be arranged in various ways on the insulating sheet which is the connector body. For example, each bent lead is formed into an S shape in the undeformed state in which the band-shaped portion 370 between the terminal side end portion 366 and the tip end side end portion 368 is already in the initial state, and the bent body is formed into a connector body. Lower surface 337 of an insulating sheet (FIG. 24)
Can extend along. In addition, as shown in FIG. 24, the arrangement of the plurality of S-shaped lead structures is such that the terminal side end portions 366 of the leads are arranged along one row and the tip side end portions 368 of the leads are the same. However, there is a method of arranging the leads along another row offset from the row of the terminal side ends and arranging the leads in a partially overlapping manner. Alternatively, the bent lead may be formed by connecting the terminal end 382 and the tip end 3 of the lead.
There is also a method of forming a substantially U-shaped structure 380 that has only one bent portion between the structure 84 and 84. Further, it is also possible to make a structure having a number of bent portions.

In the connection part of FIG. 26, in order to hold the distal end portion 468 of each lead in its position, a connecting structure provided under the distal end portion, such as a button portion, is used. I haven't. Instead, the tip end 468 of each lead is connected to the terminal end 4 of the lead adjacent to it.
66 via a breakable element 471. This easy-to-break element 471 allows each distal end 46 to
8 is held at a position adjacent to the lower surface 437 of the insulating sheet that is the connector body. Breakable element 4
71 can be formed as a continuous part of the strip-shaped portion 470 that constitutes the lead itself, that is, a pair of Vs cut from both sides of the strip-shaped portion 470.
It can be formed by the letter-shaped notch 473. In the mounting process, the tip end portion 468 of the lead is bonded to the contact point of the microelectronic element such as a chip, and this bonding may be performed in the same manner as described above. It is possible to use a method such as activating the conductive bonding material 472 attached to the. When the bonding is completed, the microelectronic element is moved relative to the insulating sheet that is the connector body in the same manner as described above, so that the front end 468 of each lead is vertically moved. Move away from the connector body, ie away from the terminal end 466 of the lead, and
In the horizontal direction, the lead is moved toward the terminal side end portion 466. This movement action causes the rupture element 471 to rupture, releasing the tip end of each lead from coupling with the terminal end of the adjacent lead. Some forms of easy break leads include, for example:
PCT Bulletin No. WO9403036 (Application No. 2/3/1994)
US93 / 06930). Note that, in the disclosure of this PCT publication, a portion describing a structure for easily breaking a lead is incorporated into the present disclosure with this reference.

In the connection part of FIG. 27, the tip end side 568 of each lead is not provided with a bulge, and the tip end side end 568 is a continuous strip 570 forming the lead. It constitutes a part. Here again, the tip end 568 of each lead is connected to the terminal end 566 of the lead adjacent thereto via the breakable portion 571. In this connection part, the connector body 5 which is an insulating sheet
34 includes a hole 569 aligned with the terminal end 568 of the lead. As shown in FIG. 28, the bonding tool 593 is used in the bonding procedure executed for this connecting component. After aligning the connector body 534, which is an insulating sheet, and the leads provided therein with the contacts 594 of the chip 586, which is a microelectronic element, the bonding tool 593 is lowered into the hole 569. Then, the leads are pressed to the tip end portions 568 of the leads one after another, and the tip end portions are bonded to the respective contacts. When this bonding is completed, the chip 586, which is a microelectronic element, is moved relative to the connector body 534, which is an insulating sheet, in the same manner as described above. Again, this movement results in a breakable portion 57 between the tip end 568 of each lead and the terminal end 566 of the lead adjacent thereto.
1 is broken and the distal end 568 is released, thereby allowing the leads to be connected to the connector body 53 which is an insulating sheet.
It becomes possible to bend in the direction away from 4 in the same manner as described above. The hole 569 may be closed before or after this moving step is performed, for example, another film or sheet may be attached to the upper surface of the insulating layer.

As shown in FIG. 29, the microelectronic element 686 itself such as a wafer or a chip is
A plurality of leads 6 extending along or above the contact mounting surface 692 of the chip or wafer.
It is also possible to equip 60. is there. In this case, the terminal side end portion 666 which is the fixed end portion of each lead is connected to the contact 694 of the chip or the wafer, and thus the internal circuit of the chip or the wafer (reference numeral 695).
(Schematically shown in FIG. 3) may be permanently connected. The tip-side end portion 668 of each lead is easily attached to the upper surface of the chip or the wafer, for example, via the small button portion 680 that adheres with a weak force as described above. You should leave it. It is also optional to adhere the bonding material 672 to the tip end portion. These structures can be made in a manner substantially similar to the lead structure described above. The contact mounting surface 692 of the chip may be coated with a coating layer 693 of an insulating material such as polyimide for protecting the chip itself during the lead forming process. This coating layer 69
No. 3 may remain in the completed assembly. The chip or wafer with multiple leads of FIG. 29 can be attached to a connector body 634 with multiple terminals 644 on the bottom surface 637. Each of these terminals 644 is connected to an element or conductor 645 of the internal circuit. Further, each of the terminals 644 may be connected to the structure 646 provided on the upper surface of the connector body. The structure 646 is
For example, it can be connected to an external substrate by the solder ball process as described above.
The bonding process is substantially the same as described above. Again, after the bonding is complete, 2
The two elements are moved vertically away from each other and with them horizontally to form the desired bent lead structure.

As shown in FIG. 30, a plurality of chips 70 are provided as an assembly according to still another embodiment of the present invention.
There are assemblies, such as 1, 702, 703, that can include multiple microelectronic elements. These multiple elements are connected to the heat
Physically attached to the sink 704 so that the respective contact mounting surfaces 705, 706, 707 are substantially coplanar with each other. When the chips have different thicknesses, the heat sink 704 may be provided with a plurality of chip mounting surfaces having different heights. The microelectronic elements are arranged such that the relative horizontal position between them is a predetermined relative position. This means that the relative positions of the contact arrays of the chips are arranged so as to be a predetermined relative position. The connector body 734 applied to these devices is equipped with a large number of terminals 744. It is desired that the terminals 744 be arranged so as to form an array corresponding to the array of the respective contacts provided on the respective chips (microelectronic elements). The terminal 744 is further provided on an external board (not shown).
It can be connected to. A large number of S-shaped leads 766 connecting between the terminals 744 and the contacts of the chips are molded by a molding process similar to that described above. In that case, the connector body 734 is superposed on the assembly in which the chips 701, 702, and 703 are combined, and the distal end portions of the leads provided in the connector body 734 are connected to the contacts of the chips. Bonding can be done at the same time, and once this bonding is complete, the chip assembly is moved relative to the connector body 734.
Alternatively, a plurality of chips 701, 702, 703 may be provided with leads, and the distal ends of the leads may be attached to a plurality of terminals of the connector body as described above with reference to FIG. A method of bonding to 744 may be used. Again, it is desirable to inject a deformable insulating material (not shown) into the space between the connector body and the assembly of chips to substantially surround the bent leads. In this configuration, the connector body 7
34 comprises a plurality of conductors 745 for interconnection,
The conductors interconnect different terminals 744 and thus different chips (microelectronic devices) to form a multi-chip module. The conductors 745 shown in FIG.
It is only shown schematically. In actual use, these conductors include, for example, a number of conductors that are multi-layered, or a number of conductors that are formed on the upper surface and the lower surface of the connector body 734 itself. Or As an alternative process, a plurality of chips 70
Each of the 1, 702, 703 is individually aligned with the connector body 734 and bonded to the distal end 768 of the respective lead 760 and then the support member or heat sink 704 is bonded to the chips. There is also a method.

The microelectronic components connected by the structure and method according to the present invention need not include the chip itself. For example, the microelectronic device itself is a rigid printed wiring board, a ceramic
It may be a circuit board or interconnect module such as a module or metal core wiring layer. The leads used to connect to this type of device are generally larger than the leads used to connect to a chip or wafer. Therefore, the leads used to connect directly to the circuit board should be about 10 microns to about 35 microns thick and
Desirably, it is formed as a ribbon-shaped structure having a length of about 500 microns to about 2500 microns. The ribbon used for this purpose is preferably formed of a copper alloy rather than gold.

Various modifications, as well as various combinations, of the many features described above can be implemented without departing from the claimed invention. Therefore, the above description of the preferred embodiments is merely an example, and the present invention is not limited to these preferred embodiments.

[Brief description of drawings]

FIG. 1 is a plan view of an element used to manufacture a component according to an embodiment of the present invention.

FIG. 2 is a partial cross-sectional view schematically showing an enlarged part of one of the elements shown in FIG.

FIG. 3 is a partial top view showing a portion of the element shown in FIG. 2, but at a stage later than FIG. 2 in the manufacturing process.

FIG. 4 is a schematic partial cross-sectional view similar to FIG. 2, but showing a stage after that in FIG. 2 in the manufacturing process.

FIG. 5 is a schematic partial cross-sectional view similar to FIG. 2, but showing a stage later than that in FIG. 3 in the manufacturing process.

FIG. 6 is a schematic partial cross-sectional view similar to FIG. 2, but showing a stage later than that of FIG. 4 in the manufacturing process.

FIG. 7 is a schematic partial cross-sectional view similar to FIG. 2, but showing a stage later than FIG. 5 in the manufacturing process.

FIG. 8 is a partial bottom view showing a portion of the element shown in FIGS.

FIG. 9 is a view similar to FIG. 2, but showing the elements at a later stage in the manufacturing process.

FIG. 10 is a view similar to FIG. 2, but showing the elements at a later stage in the manufacturing process.

FIG. 11 is a schematic exploded view showing the parts of FIGS. 1 to 10 together with further parts and devices used in the mounting process according to another embodiment of the present invention,

12 is a top view of the partially completed assembly after performing the process of FIG.

FIG. 13 is a partial cross-sectional view similar to FIG. 10, but showing the part together with the semiconductor chip at a stage later than FIG. 10 in the mounting process.

FIG. 14 is a partial cross-sectional view similar to FIG. 10, but showing the part together with the semiconductor chip at a stage later than FIG. 13 in the mounting process.

FIG. 15 is a partial cross-sectional view similar to FIG. 10, but showing the component together with the semiconductor chip at a stage later than that in FIG. 14 in the mounting process.

16 is a partial cross-sectional view similar to FIG. 10, but showing the component together with the semiconductor chip at a stage later than FIG. 15 in the mounting process.

FIG. 17 is a partial cross-sectional view similar to FIG. 10, but showing the component together with the semiconductor chip at a stage later than that in FIG. 16 in the mounting process.

FIG. 18 is a perspective view showing the completed assembly.

FIG. 19 is a partial cross-sectional view similar to FIG. 10, but showing components according to another embodiment of the invention.

FIG. 20 is a partial sectional view showing components and steps according to still another embodiment of the present invention.

21 is a partial cross-sectional view similar to FIG. 20, but showing the component at a later stage than FIG. 20.

22 is a partial cross-sectional view similar to FIG. 20, but showing the component at a later stage than FIG. 21.

FIG. 23 is a schematic partial perspective view explaining the operation of the component according to still another embodiment of the present invention.

FIG. 24 is a schematic partial plan view showing a component according to still another embodiment of the present invention.

FIG. 25 is a schematic partial plan view showing a component according to still another embodiment of the present invention.

FIG. 26 is a schematic partial plan view showing a component according to still another embodiment of the present invention.

FIG. 27 is a schematic partial plan view showing a component according to still another embodiment of the present invention.

28 is a schematic partial cross-sectional view showing a part of a mounting process used for the component of FIG. 27. FIG.

FIG. 29 is a schematic partial cross-sectional view showing a component according to still another embodiment of the present invention.

FIG. 30 is a schematic partial side view of an assembly according to yet another embodiment of the present invention.

[Explanation of symbols]

34 Insulation Sheet (Connector Body) 44 Terminal 60 Lead 66 Lead Terminal Side End 68 Lead Tip Side End 84 Connection Component 86 Wafer 90 Contact 94 118 Insulation Support Layer 134 Insulation Sheet (Top Layer Sheet) 160 Lead 202 Micro Electronic element 204 Contact point 366, 466, 566, 666 Lead end side 368, 468, 588, 668 Lead end side 534, 634, 734 Insulation sheet (connector body) 660, 760 Lead 701, 702, 703 chip

 ─────────────────────────────────────────────────── ─── Continued Front Page (72) Inventor Thomas H. Distefano California, USA 95030, Monte Sereno, Robin Ann Lane 15363 (72) Inventor John W. Smith, California 94303, Palo, USA Alto, San Antonio Road 777, number 140

Claims (67)

[Claims] 1. Leads for microelectronics
In the array manufacturing method, (a) a step of preparing a first element (84),
The element has a first side (3) with a plurality of elongated flexible leads (60).
7), the plurality of leads extending along the first surface, each of the plurality of leads having a terminal end (66) attached to the first element, A first element preparing step having a tip side end portion (68) offset from a terminal side end portion, and (b) molding the plurality of leads, wherein the tip side of each of the plurality of leads is provided. All of the ends are simultaneously displaced relative to the first element in a predetermined displacement to bend the distal end away from the first element, thereby completing the molding step. A lead forming step of subsequently forming the plurality of leads by causing the plurality of elongated flexible leads to extend in a direction away from the first surface. how to. 2. The front end portion (68) of each of the plurality of leads is fixed to the first element in an initial state,
The method of claim 1, wherein the distal end of each of the plurality of leads is pulled away from the first element during the lead forming step. 3. The method further comprises the step of attaching the distal end of each of the plurality of leads to a second element (86), the lead forming step including attaching the second element to the first element. 3. The method according to claim 1 or 2, further comprising a moving step of moving the member relative to the predetermined displacement. 4. The tip-side end portion of each of the plurality of leads is initially in a first horizontal direction (D ₁₎ parallel to the first surface of the first element from the terminal-side end portion of the lead. ), The moving step of moving the element causes the second element to move in a second direction opposite to the first direction.
Is moved in the horizontal direction (D _1), The method according to claim 3, characterized in that it comprises a step of moving vertically downward is a direction away said second element from said first element. 5. The horizontal and vertical movements cause each of the plurality of leads to move to a molding position where the leads extend in a generally vertical direction away from the first surface. The method of claim 4 characterized. 6. Injecting a flowable insulating material (108) around the plurality of leads to cure the flowable insulating material after completion of the lead forming step, thereby providing an insulating support around the plurality of leads. 4. The method of claim 3, including the step of forming a layer. 7. The step of injecting a flowable insulating material comprises the step of injecting the flowable insulating material between the second element and the first element. The method described. 8. The second layer after the formation of the insulating support layer is completed.
The method of claim 6 including the step of removing the element (180). 9. The method of claim 8 including the step of applying an adhesive (173) to a first surface of the support layer opposite the first layer. 10. The moving step of moving the second element relative to the first element causes the two elements to be a tool (94), the tool being the first element of the second element. Abuttingly engaging the opposite first surface with the first element in a fixture (105), the fixture having a first element opposite the second element of the first element. Two
4. The method according to claim 3, further comprising a step of engaging the surfaces so as to abut each other, and a step of causing the tool and the fixture to move relative to each other. Method. 11. Each of the steps of engaging the second element with the tool and engaging the first element with the fixture provides a negative pressure through each of the tool and the fixture. 11. The method of claim 10 including the step of causing atmospheric pressure to press the second and first elements against the tool and fixture. 12. The first element includes a top layer sheet (34) having a top surface and a bottom surface which are flexible insulating sheets, and the plurality of leads includes the bottom surface (34) of the top layer sheet (34). 37) along with the step of providing the plurality of leads at the terminal end of each of the plurality of leads protruding into the hole formed in the top sheet. The method of claim 3 including the step of providing a structure (44, 56). 13. The second element comprises a second sheet (180), which is a flexible insulating sheet, between the top sheet and the second sheet after completion of the moving step. Injecting a flowable insulating material and curing the flowable insulating material, whereby the top sheet and the second layer
13. The method of claim 12 including the step of forming an insulating support layer (118) with the sheet. 14. The attaching step of attaching the tip end of each of the plurality of leads to the second element projects into each of the tip ends into a hole formed in the second sheet. The step of providing the tip structure (181) for providing the terminal structure, the step of providing the terminal structure includes And the step of providing the tip structure is performed such that the tip structure bulges outward at a lower surface of the second sheet opposite the lead. Forming the outer bulge portion of the structure to help secure both ends of the lead to the sheets during the performance of the moving step. What you did 14. The method of claim 13 characterized. 15. The second element (86) comprises a plurality of contacts (90).
Including at least one active microelectronic device having a contact mounting surface mounted thereon, the mounting step for mounting the distal end of each of the plurality of leads to the second element. 4. The method of claim 3 including the step of bonding the tip end of the lead to the contact prior to performing the step. 16. The first element includes a top layer sheet (34) having a top surface and a bottom surface that are flexible insulating sheets, the plurality of leads extending along the bottom surface. Each of the plurality of leads is provided with a terminal structure (44, 56) at the terminal side end thereof, the terminal structure extending through the uppermost layer sheet to the upper surface. 16. The method of claim 15, wherein the bonding step of bonding the distal end of the lead to the contact connects the terminal structure to the contact. 17. The bonding step of bonding the tip end to the contact aligns the top sheet with the second element such that the tip end is aligned with the contact. 17. The method of claim 16 including the steps of: pressing and pressing the topmost sheet against the contact mounting surface of the at least one microelectronic element. 18. The method of claim 17, wherein the pressing step comprises applying fluid pressure to the top surface of the top sheet. 19. The bonding step comprises heating the plurality of leads and the plurality of contacts to simultaneously activate the conductive bonding material (74) at the interface of the plurality of leads and the contacts. 18. The method of claim 17, comprising: 20. The method according to claim 17, characterized in that the topmost sheet is in contact with a reinforcing structure (48, 32) during the performance of the bonding step. 21. The reinforcing structure comprises a flexible but substantially stretch resistant metal foil (48) affixed to the topmost sheet. The method described. 22. The stiffening structure includes a substantially rigid ring (32) having an opening in the center, the topmost sheet extending across the opening and by the ring. 21. The method of claim 20, wherein the method is maintained in tension. 23. A wafer (80) in which the second element comprises a number of semiconductor chips (88) with a plurality of contacts (90).
The top sheet extends over a plurality of chips of the number of chips, and the bonding step includes a plurality of leads for each of a plurality of leads in a plurality of regions of the top sheet. Each of the regions of the topmost sheet is connected to one of the chips by simultaneously bonding the tip end to a plurality of contacts provided on a plurality of the chips. And the method further comprises the steps of:
Cutting the chips from the wafer to cut the regions from the top sheet forms individual units each containing one chip (88) and one region of the sheet corresponding to that chip. 17. The method of claim 16 including the step of cutting. 24. By injecting a flowable insulating material (108) between the wafer and the top sheet after completion of the bonding step and prior to performing the cutting step and curing the insulating material. Forming a deformable insulating support layer, the cutting step including cutting the insulating support layer so that each of the units includes a portion of the insulating support layer. 24. The method of claim 23, wherein the method comprises: 25. The topmost sheet extends over all of the chips on the wafer, and the bonding step comprises: 24. The method of claim 23 including the step of operatively bonding. 26. The second element includes a plurality of microelectronic elements (701, 702, 703), each tip end of the plurality of leads being connected to the plurality of microelectronic elements. The method according to claim 3, wherein: 27. The first element includes an interconnection (745) between at least some of the terminal ends of each of the plurality of leads, whereby the plurality of microelectronic elements are provided. 27. Interconnected via said first element.
The described method. 28. The method of claim 3, wherein the moving step is performed to shape the plurality of leads (60) into a bent shape. 29. The method of claim 28, wherein the plurality of leads (60) is initially in the shape of a generally flat ribbon having a thickness of about 25 microns or less. 30. The plurality of leads (260, 370) are initially bent so that the plurality of leads are at least partially approximated to a straight line during execution of the moving step. Item 3. The method according to Item 3. 31. A component for connection in microelectronics, comprising: (a) an insulative first element (34) having a first surface (37), and (b) a first surface of the first element. A plurality of elongated flexible leads (60) extending above, each of which has a terminal end (66) fixedly secured to said first element; A tip end portion (68) separably fixed to the first element, and the tip end portion of each of the plurality of leads is separated from the terminal end portion of the lead by the first end portion (68). A component having a plurality of leads, which are offset in the horizontal direction parallel to one surface. 32. The component according to claim 31, wherein all of the tip end portions are offset in the same horizontal direction from the terminal end portions. 33. An insulative first sheet (3) in which the insulative first element has a second surface (35) opposite the first surface.
4), wherein the component further comprises a conductive terminal structure (44, 56) extending through the sheet at the position of the terminal-side end of the lead. 32. The part according to claim 31. 34. The component according to claim 33, wherein the first insulating sheet is flexible. 35. The component of claim 31, wherein each of the plurality of leads includes a conductive bonding material (74) at the tip end thereof. 36. The plurality of leads includes gold,
36. The component of claim 35, wherein the bonding material comprises at least one metal selected from the group consisting of tin, germanium, and silicon. 37. The method according to claim 31, wherein the plurality of leads and the plurality of terminal structures are arranged so as to form a regular grid pattern with a grid spacing of about 1.25 mm or less. Parts. 38. The plurality of leads have a length of about 200-.
38. The component of claim 37, having a thickness of about 1000 microns, a thickness of about 5 to about 25 microns, and a width of about 10 to about 50 microns. 39. In a microelectronic assembly, a microelectronic device (86, 8) having a front surface comprising a plurality of contacts (90) arranged in an (a) plane array.
8), and (b) a flexible connector body (34) having a lower surface (37) facing the front surface of the element while maintaining a space between the front surface of the element, A plurality of terminal structures (44, 5) that are exposed on the lower surface and are arranged to form a surface array.
A connector body comprising 6) and extending over the array of contacts of the element; and (c) a bend extending between the plurality of terminal structures and the plurality of contacts. Multiple flexible leads (6
0), wherein each of the plurality of leads has a terminal side end portion attached to one of the plurality of terminal structures,
A plurality of leads having a distal end attached to one of the plurality of contacts. 40. The plurality of flexible leads comprises:
It is substantially S-shaped, and is constituted by a metal ribbon having main surfaces opposite to each other, and the ribbon is bent in a direction perpendicular to the main surface to form an S-shape. The assembly of claim 39. 41. The assembly of claim 40, wherein the ribbon is integrally formed with the terminal structure. 42. The assembly of claim 40, wherein all of the plurality of S-shaped leads are substantially parallel to each other. 43. The assembly of claim 39, wherein the plurality of contacts are spaced from each other in the array with a contact pitch of about 1.25 mm or less. 44. The plurality of flexible leads comprises:
The assembly of claim 43 having a thickness of about 30 microns or less. 45. A deformable insulating material (108) substantially filling the space between the front surface of the microelectronic element and the lower surface of the connector body. The assembly of paragraph 44. 46. The flexible sheet-like element (34) wherein the flexible connector body has an upper surface (35) facing away from the microelectronic element.
46. The assembly of claim 45, further comprising: the terminal structure (44, 56) extending through the sheet-like element to the upper surface. 47. The bottom surface (37) of the connector body.
47. The assembly of claim 46, wherein the assembly has substantially no holes except at the location of the terminal structure. 48. In a connector for microelectronics, (a) a body (134) having a lower surface (137) and (b) are arranged so as to form a plane array, and are attached to the body and exposed to the lower surface. Multiple Terminal Structure (140)
And (c) a plurality of substantially S-shaped leads (160), each of the S-shaped leads extending in a direction away from the lower surface, and each of the S-shaped leads having the plurality of S-shaped leads (160). A plurality of S-shaped leads having a terminal side end connected to one of the terminal structures and a tip side end remote from the terminal structure; and (d) the body A layer of deformable insulating material (118) in contact with the lower surface, the deformable layer having a lower surface (119) opposite the body, the deformable layer comprising the plurality of S-shaped leads. And the tip end portion of each of the plurality of S-shaped leads projects from the lower surface of the easily deformable layer, whereby the contact mounting surface of the microelectronic element and the By overlapping the lower surface of the easily deformable layer with the bottom surface of the plurality of S-shaped leads, And a deformable layer capable of abutting each of the distal end portions with a plurality of contacts (204) of the microelectronic element. 49. Each of the plurality of leads is provided with a conductive bonding material (170) at its tip end portion for joining the tip end portion to the contact. The connector of claim 48. 50. Each of the plurality of leads is formed of a metal ribbon having major surfaces facing each other, and the ribbon is bent in a direction perpendicular to the major surface to form an S-shape. 50. The connector according to claim 49, wherein: 51. In a connector for microelectronics, (a) a body (134) having a lower surface (137) and (b) are arranged so as to form a plane array, and are attached to the body and exposed to the lower surface. Multiple Terminal Structure (140)
(C) a plurality of bent flexible leads (160), each of the plurality of leads extending in a direction away from the lower surface, and each of the plurality of leads being on opposite sides of each other. Is formed of a metal ribbon having an upper surface and a lower surface facing each other, the ribbon is bent in a direction perpendicular to the upper surface and the lower surface, and each of the plurality of leads is one of the plurality of terminal structures. A plurality of leads each having a terminal-side end connected to one of the terminals and a tip-side end separated from the terminal structure; and (d) an easily deformable insulating material in contact with the lower surface of the body. A layer (118) of the deformable layer having a lower surface on the side opposite to the body, the deformable layer substantially surrounding and supporting the lead, and the distal side of the lead. The ends project from the lower surface of the easy-deformation layer, and thereby the marker. By overlapping the contact-equipped surface of the microelectronic element and the lower surface of the easily deformable layer, it is possible to bring the tip end portions of the leads into contact with the contacts of the microelectronic element. And a deformation-promoting layer, the connector being provided. 52. A method of manufacturing a plurality of semiconductor chip assemblies, comprising: (a) a wafer containing a plurality of semiconductor chips (686).
Wherein the wafer has a first surface (692) with a plurality of elongated flexible leads, the plurality of leads extending along the first surface, Each of the plurality of leads has a terminal side end attached to the wafer, and a tip side end offset from the terminal side end, a wafer preparation step, (b) each of the plurality of leads A mounting step of mounting the end portion on the front end side to the second element (634), and (c) a step of molding the plurality of leads, wherein the second element is moved in a predetermined manner relative to the wafer. To form the plurality of leads by moving all of the plurality of leads at the same time in the direction away from the wafer to move all of the tip end portions of the plurality of leads at the same time. A method characterized by. 53. The tip end portion (668) of each of the plurality of leads is fixed to the wafer in an initial state, and the tip end portion of each of the plurality of leads is formed by the lead forming step. 53. The method of claim 52, wherein the method is stripped from the wafer during the performance of. 54. The tip-side end portion of each of the plurality of leads is initially in a first horizontal direction (D ₁ ) parallel to the first surface of the wafer from the terminal-side end portion of the lead.
Offsetting to, the moving step of moving the second element moves the second element in a second horizontal direction (D ₁ ) opposite to the first direction and moves the second element to the 53. The method of claim 52 including the step of moving vertically downwardly away from the wafer. 55. The second element includes a top layer sheet (634), which is a flexible insulating sheet, the top layer sheet having a top surface facing away from the wafer;
A lower surface (634) facing the wafer, and a plurality of contact structure bodies (644, 646) extending from the upper surface to the lower surface, and the tip end of each of the plurality of leads. The attaching step of attaching a portion to the second element includes a connecting step of electrically connecting the tip end of each of the leads to the contact structures prior to the moving step. 53. The method of claim 52, wherein: 56. The top layer sheet extends over all of the plurality of chips on the wafer, and the connecting step corresponds to all of the plurality of chips on the wafer. 56. The method of claim 55, including the step of connecting a plurality of contact structures of the top layer sheet in a single operation. 57. A flowable insulating material around the plurality of leads between the wafer and the insulating top sheet.
The method of claim 55, further comprising injecting (108). 58. Cutting the wafer and the insulating topmost sheet after completion of the moving step such that each of the topmost sheet is insulative with one or more of the plurality of chips. 58. The method of any of claims 52-57, further comprising forming a plurality of units including a portion of the. 59. The moving step of moving the second element relative to the wafer comprises placing the wafer on a button-shaped holding table (94), the button-shaped holding table being the uppermost sheet of the wafer. And a step of engaging the second surface on the opposite side to the upper surface sheet on the upper holding table (105), the upper holding table on the side opposite to the wafer of the uppermost sheet. 58. Any of claims 55 to 57, including the steps of engaging the upper surfaces in abutting engagement with each other, and causing the holders to move relative to each other. The method described. 60. The wafer preparing step of preparing a wafer having the plurality of leads on the first surface,
Depositing a coating layer (693) of an insulating material on the first side of the wafer, and then performing the molding of the leads on the surface having the coating layer deposited thereon. 58. A method according to any of claims 52 to 57. 61. A wafer assembly comprising: (a) a wafer including a plurality of semiconductor chips and having a first surface, wherein the plurality of chips of the wafer are provided on the first surface. (B) a plurality of deformable leads (660), each of which has a fixed end permanently connected to one of the plurality of contacts. Part and the first of the wafer
A plurality of leads having a tip end that is separably fastened to the surface, and a wafer assembly. 62. The wafer assembly of claim 61, further comprising an insulating coating layer (693) on the first surface of the wafer. 63. A chip assembly comprising: (a) a chip (686) having a first surface and a plurality of contacts provided on the first surface; and (b) a plurality of deformable leads (660). A plurality of leads each having a fixed end permanently connected to one of the plurality of contacts and a tip end separably secured to the first surface of the chip. A chip assembly having a plurality of leads and a plurality of leads. 64. The chip assembly of claim 63, further comprising an insulating coating layer (693) on the first surface of the wafer. 65. One of the first and second elements comprises a flexible insulating sheet (34), and the other of the first and second elements is one. Or a plurality of semiconductor chips, the plurality of leads being located between the one or more semiconductor chips and the flexible insulating sheet after completion of the moving step. The method according to claim 3, wherein 66. The method of claim 65, wherein the other of the first and second elements is a single semiconductor chip (88). 67. The other of the first and second elements (86) includes a plurality of semiconductor chips (88), and the method further comprises the first step after completion of the moving step. 66. The method of claim 65, including the step of cutting the second element to form a plurality of individual units, each containing a single chip.