JPH08510296A - 完全な反応ガス分配を有するスパッタ被覆コリメータ - Google Patents
完全な反応ガス分配を有するスパッタ被覆コリメータInfo
- Publication number
- JPH08510296A JPH08510296A JP6525681A JP52568194A JPH08510296A JP H08510296 A JPH08510296 A JP H08510296A JP 6525681 A JP6525681 A JP 6525681A JP 52568194 A JP52568194 A JP 52568194A JP H08510296 A JPH08510296 A JP H08510296A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- target
- gas
- collimator
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000007789 gas Substances 0.000 claims abstract description 51
- 238000004544 sputter deposition Methods 0.000 claims abstract description 38
- 239000012495 reaction gas Substances 0.000 claims abstract description 24
- 239000000463 material Substances 0.000 claims abstract description 17
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000004065 semiconductor Substances 0.000 claims abstract description 9
- 239000000758 substrate Substances 0.000 claims description 77
- 235000012431 wafers Nutrition 0.000 claims description 34
- 238000000034 method Methods 0.000 claims description 27
- 238000000576 coating method Methods 0.000 claims description 24
- 239000011248 coating agent Substances 0.000 claims description 22
- 230000008569 process Effects 0.000 claims description 22
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 10
- 239000010936 titanium Substances 0.000 claims description 10
- 229910052719 titanium Inorganic materials 0.000 claims description 10
- 150000002500 ions Chemical class 0.000 claims description 9
- 238000000151 deposition Methods 0.000 claims description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 7
- 230000008021 deposition Effects 0.000 claims description 7
- 230000001902 propagating effect Effects 0.000 claims description 6
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 5
- 238000005546 reactive sputtering Methods 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 5
- 230000000644 propagated effect Effects 0.000 claims description 2
- 238000001771 vacuum deposition Methods 0.000 claims 3
- 238000007599 discharging Methods 0.000 claims 2
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- 230000000149 penetrating effect Effects 0.000 claims 1
- 239000000376 reactant Substances 0.000 claims 1
- 230000000452 restraining effect Effects 0.000 claims 1
- 238000005477 sputtering target Methods 0.000 claims 1
- 238000013022 venting Methods 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 abstract description 8
- 230000000717 retained effect Effects 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 15
- 239000002245 particle Substances 0.000 description 12
- 239000011261 inert gas Substances 0.000 description 6
- 239000013072 incoming material Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 230000004907 flux Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- 238000007792 addition Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000003190 augmentative effect Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000007717 exclusion Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/046—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
- C23C14/0068—Reactive sputtering characterised by means for confinement of gases or sputtered material, e.g. screens, baffles
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08/060,315 US5346601A (en) | 1993-05-11 | 1993-05-11 | Sputter coating collimator with integral reactive gas distribution |
| US08/060,315 | 1993-05-11 | ||
| PCT/US1994/005248 WO1994026949A1 (en) | 1993-05-11 | 1994-05-11 | Sputter coating collimator with integral reactive gas distribution |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH08510296A true JPH08510296A (ja) | 1996-10-29 |
Family
ID=22028722
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6525681A Pending JPH08510296A (ja) | 1993-05-11 | 1994-05-11 | 完全な反応ガス分配を有するスパッタ被覆コリメータ |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US5346601A (OSRAM) |
| EP (1) | EP0698128B1 (OSRAM) |
| JP (1) | JPH08510296A (OSRAM) |
| AU (1) | AU6831494A (OSRAM) |
| CA (1) | CA2156716A1 (OSRAM) |
| DE (1) | DE69401210T2 (OSRAM) |
| TW (1) | TW243536B (OSRAM) |
| WO (1) | WO1994026949A1 (OSRAM) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5928771A (en) * | 1995-05-12 | 1999-07-27 | Diamond Black Technologies, Inc. | Disordered coating with cubic boron nitride dispersed therein |
| US5591313A (en) * | 1995-06-30 | 1997-01-07 | Tabco Technologies, Inc. | Apparatus and method for localized ion sputtering |
| EP0766304A2 (en) * | 1995-09-29 | 1997-04-02 | AT&T Corp. | Method for coating heterogeneous substrates with homogeneous layers |
| US5705042A (en) * | 1996-01-29 | 1998-01-06 | Micron Technology, Inc. | Electrically isolated collimator and method |
| US5985102A (en) * | 1996-01-29 | 1999-11-16 | Micron Technology, Inc. | Kit for electrically isolating collimator of PVD chamber, chamber so modified, and method of using |
| US6287436B1 (en) | 1998-02-27 | 2001-09-11 | Innovent, Inc. | Brazed honeycomb collimator |
| KR100340174B1 (ko) * | 1999-04-06 | 2002-06-12 | 이동준 | 전기화학적 바이오센서 테스트 스트립, 그 제조방법 및 전기화학적 바이오센서 |
| US6352626B1 (en) | 1999-04-19 | 2002-03-05 | Von Zweck Heimart | Sputter ion source for boron and other targets |
| US20070235320A1 (en) | 2006-04-06 | 2007-10-11 | Applied Materials, Inc. | Reactive sputtering chamber with gas distribution tubes |
| US20070261951A1 (en) * | 2006-04-06 | 2007-11-15 | Yan Ye | Reactive sputtering zinc oxide transparent conductive oxides onto large area substrates |
| US7674662B2 (en) * | 2006-07-19 | 2010-03-09 | Applied Materials, Inc. | Process for making thin film field effect transistors using zinc oxide |
| US7927713B2 (en) * | 2007-04-27 | 2011-04-19 | Applied Materials, Inc. | Thin film semiconductor material produced through reactive sputtering of zinc target using nitrogen gases |
| KR101536101B1 (ko) * | 2007-08-02 | 2015-07-13 | 어플라이드 머티어리얼스, 인코포레이티드 | 박막 반도체 물질들을 이용하는 박막 트랜지스터들 |
| US8980066B2 (en) * | 2008-03-14 | 2015-03-17 | Applied Materials, Inc. | Thin film metal oxynitride semiconductors |
| US8143093B2 (en) * | 2008-03-20 | 2012-03-27 | Applied Materials, Inc. | Process to make metal oxide thin film transistor array with etch stopping layer |
| US7879698B2 (en) * | 2008-03-24 | 2011-02-01 | Applied Materials, Inc. | Integrated process system and process sequence for production of thin film transistor arrays using doped or compounded metal oxide semiconductor |
| US8258511B2 (en) | 2008-07-02 | 2012-09-04 | Applied Materials, Inc. | Thin film transistors using multiple active channel layers |
| JP5889791B2 (ja) | 2009-09-24 | 2016-03-22 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | ソース・ドレイン金属エッチングのためのウェットプロセスを用いた金属酸化物又は金属酸窒化物ｔｆｔの製造方法 |
| US8840763B2 (en) * | 2009-09-28 | 2014-09-23 | Applied Materials, Inc. | Methods for stable process in a reactive sputtering process using zinc or doped zinc target |
| US11851751B2 (en) * | 2021-07-23 | 2023-12-26 | Taiwan Semiconductor Manufacturing Co., Ltd. | Deposition system and method |
Family Cites Families (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3595773A (en) * | 1965-12-17 | 1971-07-27 | Euratom | Process for depositing on surfaces |
| US4297162A (en) * | 1979-10-17 | 1981-10-27 | Texas Instruments Incorporated | Plasma etching using improved electrode |
| US4364995A (en) * | 1981-02-04 | 1982-12-21 | Minnesota Mining And Manufacturing Company | Metal/metal oxide coatings |
| FR2538987A1 (fr) * | 1983-01-05 | 1984-07-06 | Commissariat Energie Atomique | Enceinte pour le traitement et notamment la gravure de substrats par la methode du plasma reactif |
| DE3331707A1 (de) * | 1983-09-02 | 1985-03-21 | Leybold-Heraeus GmbH, 5000 Köln | Verfahren und vorrichtung zum reaktiven aufstaeuben von verbindungen von metallen und halbleitern |
| JPS6074626A (ja) * | 1983-09-30 | 1985-04-26 | Fujitsu Ltd | ウエハー処理方法及び装置 |
| US4534816A (en) * | 1984-06-22 | 1985-08-13 | International Business Machines Corporation | Single wafer plasma etch reactor |
| JPS6175514A (ja) * | 1984-09-21 | 1986-04-17 | Hitachi Ltd | 処理装置 |
| US4793975A (en) * | 1985-05-20 | 1988-12-27 | Tegal Corporation | Plasma Reactor with removable insert |
| JPS627855A (ja) * | 1985-07-05 | 1987-01-14 | Hitachi Ltd | スパツタリング装置 |
| KR910005733B1 (ko) * | 1986-01-17 | 1991-08-02 | 가부시기가이샤 히다찌 세이사꾸쇼 | 플라즈마 처리방법 및 장치 |
| GB8622820D0 (en) * | 1986-09-23 | 1986-10-29 | Nordiko Ltd | Electrode assembly & apparatus |
| US4780169A (en) * | 1987-05-11 | 1988-10-25 | Tegal Corporation | Non-uniform gas inlet for dry etching apparatus |
| JPH0660391B2 (ja) * | 1987-06-11 | 1994-08-10 | 日電アネルバ株式会社 | スパッタリング装置 |
| US4846928A (en) * | 1987-08-04 | 1989-07-11 | Texas Instruments, Incorporated | Process and apparatus for detecting aberrations in production process operations |
| JPH0741153Y2 (ja) * | 1987-10-26 | 1995-09-20 | 東京応化工業株式会社 | 試料処理用電極 |
| JPH01302726A (ja) * | 1988-02-10 | 1989-12-06 | Japan Synthetic Rubber Co Ltd | 反応性イオンエッチング装置 |
| US4931158A (en) * | 1988-03-22 | 1990-06-05 | The Regents Of The Univ. Of Calif. | Deposition of films onto large area substrates using modified reactive magnetron sputtering |
| ES2043970T3 (es) * | 1988-07-15 | 1994-01-01 | Balzers Hochvakuum | Dispositivo de fijacion para un disco, asi como su aplicacion. |
| JPH02151865A (ja) * | 1988-11-22 | 1990-06-11 | Ucb Sa | 高温反応処理方法 |
| DE3914065A1 (de) * | 1989-04-28 | 1990-10-31 | Leybold Ag | Vorrichtung zur durchfuehrung von plasma-aetzverfahren |
| DE3926877A1 (de) * | 1989-08-16 | 1991-02-21 | Leybold Ag | Verfahren zum beschichten eines dielektrischen substrats mit kupfer |
| US5108569A (en) * | 1989-11-30 | 1992-04-28 | Applied Materials, Inc. | Process and apparatus for forming stoichiometric layer of a metal compound by closed loop voltage controlled reactive sputtering |
| JPH0465823A (ja) * | 1990-07-06 | 1992-03-02 | Oki Electric Ind Co Ltd | 半導体素子の製造方法および製造装置 |
| DE4106770C2 (de) * | 1991-03-04 | 1996-10-17 | Leybold Ag | Verrichtung zum reaktiven Beschichten eines Substrats |
| CA2061119C (en) * | 1991-04-19 | 1998-02-03 | Pei-Ing P. Lee | Method of depositing conductors in high aspect ratio apertures |
| US5223108A (en) * | 1991-12-30 | 1993-06-29 | Materials Research Corporation | Extended lifetime collimator |
-
1993
- 1993-05-11 US US08/060,315 patent/US5346601A/en not_active Expired - Fee Related
-
1994
- 1994-05-11 WO PCT/US1994/005248 patent/WO1994026949A1/en not_active Ceased
- 1994-05-11 AU AU68314/94A patent/AU6831494A/en not_active Abandoned
- 1994-05-11 JP JP6525681A patent/JPH08510296A/ja active Pending
- 1994-05-11 DE DE69401210T patent/DE69401210T2/de not_active Expired - Fee Related
- 1994-05-11 EP EP94916738A patent/EP0698128B1/en not_active Expired - Lifetime
- 1994-05-11 CA CA002156716A patent/CA2156716A1/en not_active Abandoned
- 1994-06-11 TW TW083105336A patent/TW243536B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| US5346601A (en) | 1994-09-13 |
| WO1994026949A1 (en) | 1994-11-24 |
| CA2156716A1 (en) | 1994-11-24 |
| TW243536B (OSRAM) | 1995-03-21 |
| AU6831494A (en) | 1994-12-12 |
| EP0698128A1 (en) | 1996-02-28 |
| DE69401210D1 (de) | 1997-01-30 |
| EP0698128B1 (en) | 1996-12-18 |
| DE69401210T2 (de) | 1997-04-10 |
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