JPH08315587A - センス増幅器 - Google Patents
センス増幅器Info
- Publication number
- JPH08315587A JPH08315587A JP33291295A JP33291295A JPH08315587A JP H08315587 A JPH08315587 A JP H08315587A JP 33291295 A JP33291295 A JP 33291295A JP 33291295 A JP33291295 A JP 33291295A JP H08315587 A JPH08315587 A JP H08315587A
- Authority
- JP
- Japan
- Prior art keywords
- output
- sense amplifier
- integrated circuit
- zero
- cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 230000015654 memory Effects 0.000 claims abstract description 39
- 238000001514 detection method Methods 0.000 claims description 12
- 101000806846 Homo sapiens DNA-(apurinic or apyrimidinic site) endonuclease Proteins 0.000 claims description 10
- 101000835083 Homo sapiens Tissue factor pathway inhibitor 2 Proteins 0.000 claims description 10
- 102100026134 Tissue factor pathway inhibitor 2 Human genes 0.000 claims description 10
- 101100219315 Arabidopsis thaliana CYP83A1 gene Proteins 0.000 claims description 8
- 101100269674 Mus musculus Alyref2 gene Proteins 0.000 claims description 8
- 101100140580 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) REF2 gene Proteins 0.000 claims description 8
- 230000005669 field effect Effects 0.000 claims 2
- 238000005468 ion implantation Methods 0.000 abstract description 2
- 238000012856 packing Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- 102000020630 Dynamin II Human genes 0.000 description 2
- 108010044191 Dynamin II Proteins 0.000 description 2
- 208000013899 centronuclear myopathy 2 Diseases 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 101100184734 Caenorhabditis elegans mppb-1 gene Proteins 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5692—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency read-only digital stores using storage elements with more than two stable states
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
- G11C2211/563—Multilevel memory reading aspects
- G11C2211/5631—Concurrent multilevel reading of more than one cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1006—Data managing, e.g. manipulating data before writing or reading out, data bus switches or control circuits therefor
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Read Only Memory (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08/362688 | 1994-12-22 | ||
| US08/362,688 US5546068A (en) | 1994-12-22 | 1994-12-22 | Sense amplifier |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH08315587A true JPH08315587A (ja) | 1996-11-29 |
Family
ID=23427117
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP33291295A Withdrawn JPH08315587A (ja) | 1994-12-22 | 1995-12-21 | センス増幅器 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US5546068A (en:Method) |
| EP (1) | EP0720175A1 (en:Method) |
| JP (1) | JPH08315587A (en:Method) |
| KR (1) | KR960025792A (en:Method) |
| CN (1) | CN1131800A (en:Method) |
| TW (1) | TW286449B (en:Method) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2023095514A (ja) * | 2021-12-24 | 2023-07-06 | ラピスセミコンダクタ株式会社 | 半導体記憶装置、半導体記憶装置を作製する方法、半導体集積回路、半導体記憶集積回路 |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6169689B1 (en) * | 1999-12-08 | 2001-01-02 | Motorola, Inc. | MTJ stacked cell memory sensing method and apparatus |
| CN104598919B (zh) * | 2014-12-22 | 2017-09-19 | 宁波力芯科信息科技有限公司 | 用于相似度智能匹配的模糊识别器及方法 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3963908A (en) * | 1975-02-24 | 1976-06-15 | North Electric Company | Encoding scheme for failure detection in random access memories |
| US4287568A (en) * | 1977-05-31 | 1981-09-01 | Lester Robert W | Solid state music player using signals from a bubble-memory storage device |
| USRE32401E (en) * | 1978-06-13 | 1987-04-14 | International Business Machines Corporation | Quaternary FET read only memory |
| CA1167963A (en) * | 1980-12-24 | 1984-05-22 | Mostek Corporation | Multi-bit read only memory cell sensing circuit |
| US4449203A (en) * | 1981-02-25 | 1984-05-15 | Motorola, Inc. | Memory with reference voltage generator |
| US5293560A (en) * | 1988-06-08 | 1994-03-08 | Eliyahou Harari | Multi-state flash EEPROM system using incremental programing and erasing methods |
| US5467300A (en) * | 1990-06-14 | 1995-11-14 | Creative Integrated Systems, Inc. | Grounded memory core for Roms, Eproms, and EEpproms having an address decoder, and sense amplifier |
| JP2913926B2 (ja) * | 1991-08-29 | 1999-06-28 | 日本電気株式会社 | 半導体記憶装置 |
| US5272674A (en) * | 1992-09-21 | 1993-12-21 | Atmel Corporation | High speed memory sense amplifier with noise reduction |
-
1994
- 1994-12-22 US US08/362,688 patent/US5546068A/en not_active Expired - Lifetime
-
1995
- 1995-11-08 TW TW084111841A patent/TW286449B/zh active
- 1995-12-06 EP EP95308834A patent/EP0720175A1/en not_active Ceased
- 1995-12-20 CN CN95120890A patent/CN1131800A/zh active Pending
- 1995-12-21 JP JP33291295A patent/JPH08315587A/ja not_active Withdrawn
- 1995-12-22 KR KR1019950072142A patent/KR960025792A/ko not_active Abandoned
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2023095514A (ja) * | 2021-12-24 | 2023-07-06 | ラピスセミコンダクタ株式会社 | 半導体記憶装置、半導体記憶装置を作製する方法、半導体集積回路、半導体記憶集積回路 |
Also Published As
| Publication number | Publication date |
|---|---|
| TW286449B (en:Method) | 1996-09-21 |
| US5546068A (en) | 1996-08-13 |
| KR960025792A (ko) | 1996-07-20 |
| CN1131800A (zh) | 1996-09-25 |
| EP0720175A1 (en) | 1996-07-03 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A300 | Application deemed to be withdrawn because no request for examination was validly filed |
Free format text: JAPANESE INTERMEDIATE CODE: A300 Effective date: 20030304 |