JPH082656Y2 - 薄膜トランジスタパネル - Google Patents
薄膜トランジスタパネルInfo
- Publication number
- JPH082656Y2 JPH082656Y2 JP1988045387U JP4538788U JPH082656Y2 JP H082656 Y2 JPH082656 Y2 JP H082656Y2 JP 1988045387 U JP1988045387 U JP 1988045387U JP 4538788 U JP4538788 U JP 4538788U JP H082656 Y2 JPH082656 Y2 JP H082656Y2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- film transistor
- electrode
- gate
- pixel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000010409 thin film Substances 0.000 title claims description 90
- 230000007547 defect Effects 0.000 claims description 45
- 239000000758 substrate Substances 0.000 claims description 13
- 239000010408 film Substances 0.000 description 38
- 239000004065 semiconductor Substances 0.000 description 18
- 229910021417 amorphous silicon Inorganic materials 0.000 description 7
- 239000004973 liquid crystal related substance Substances 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 230000002950 deficient Effects 0.000 description 5
- 239000011159 matrix material Substances 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 239000004642 Polyimide Substances 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000009966 trimming Methods 0.000 description 2
- -1 acryl Chemical group 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Landscapes
- Thin Film Transistor (AREA)
- Liquid Crystal (AREA)
- Liquid Crystal Display Device Control (AREA)
- Transforming Electric Information Into Light Information (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1988045387U JPH082656Y2 (ja) | 1988-04-04 | 1988-04-04 | 薄膜トランジスタパネル |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1988045387U JPH082656Y2 (ja) | 1988-04-04 | 1988-04-04 | 薄膜トランジスタパネル |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01155025U JPH01155025U (enrdf_load_stackoverflow) | 1989-10-25 |
| JPH082656Y2 true JPH082656Y2 (ja) | 1996-01-29 |
Family
ID=31271699
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1988045387U Expired - Lifetime JPH082656Y2 (ja) | 1988-04-04 | 1988-04-04 | 薄膜トランジスタパネル |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH082656Y2 (enrdf_load_stackoverflow) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2762554B2 (ja) * | 1989-04-28 | 1998-06-04 | ソニー株式会社 | 液晶ディスプレイ装置 |
| JP3255942B2 (ja) | 1991-06-19 | 2002-02-12 | 株式会社半導体エネルギー研究所 | 逆スタガ薄膜トランジスタの作製方法 |
| JP2001125510A (ja) * | 1995-11-17 | 2001-05-11 | Semiconductor Energy Lab Co Ltd | アクティブマトリクス型ｅｌ表示装置 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0646345B2 (ja) * | 1985-04-20 | 1994-06-15 | 松下電器産業株式会社 | アクテイブマトリクス基板 |
-
1988
- 1988-04-04 JP JP1988045387U patent/JPH082656Y2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01155025U (enrdf_load_stackoverflow) | 1989-10-25 |
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