JPH08203948A - Wire bonding equipment and semiconductor device assembling method - Google Patents
Wire bonding equipment and semiconductor device assembling methodInfo
- Publication number
- JPH08203948A JPH08203948A JP7008443A JP844395A JPH08203948A JP H08203948 A JPH08203948 A JP H08203948A JP 7008443 A JP7008443 A JP 7008443A JP 844395 A JP844395 A JP 844395A JP H08203948 A JPH08203948 A JP H08203948A
- Authority
- JP
- Japan
- Prior art keywords
- lead frame
- wire bonding
- semiconductor device
- heat
- wire
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49171—Fan-out arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/787—Means for aligning
- H01L2224/78703—Mechanical holding means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明はワイヤボンディング装置
及び半導体装置組立方法に関する。詳しくは半導体装置
組立時にリードフレームと半導体素子との間を細線でワ
イヤボンディングするときに用いるヒートコマ及びシー
トクランパを改良したワイヤボンディング装置に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wire bonding device and a semiconductor device assembling method. More specifically, the present invention relates to a wire bonding apparatus having an improved heat coma and sheet clamper used for wire bonding a thin wire between a lead frame and a semiconductor element when assembling a semiconductor device.
【０００２】[0002]
【従来の技術】従来のワイヤボンディング方法は図５に
示すように、ダイステージ１の上に半導体素子２をダイ
ボンディングしたリードフレーム３を、ヒートコマ４の
上に載置し、ヒータ５を有するヒータブロック６により
ヒートコマ４を介してリードフレーム３を約３００℃程
度に加熱し、その状態で図示なきボンディングヘッドに
より、半導体素子２の電極７とリードフレーム３のイン
ナーリード８間を細線９でワイヤボンディングするよう
になっている。2. Description of the Related Art In a conventional wire bonding method, as shown in FIG. 5, a lead frame 3 in which a semiconductor element 2 is die-bonded on a die stage 1 is placed on a heating piece 4 and a heater 5 is provided. The lead frame 3 is heated to about 300 ° C. by the block 6 via the heating piece 4, and in that state, the bonding head (not shown) is used to wire bond the thin wire 9 between the electrode 7 of the semiconductor element 2 and the inner lead 8 of the lead frame 3. It is supposed to do.
【０００３】通常リードフレームは、ダイステージ１の
下面がインナーリード８の下面より突出していて段差ｈ
があるため、前記ヒートコマ４は図６に示すように、ダ
イステージ１を支承する部分１０が周囲のインナーリー
ド８を支承する部分１１より１段下がった凹部となって
いる。Usually, in the lead frame, the lower surface of the die stage 1 projects from the lower surface of the inner leads 8 and the step h
Therefore, as shown in FIG. 6, the heat piece 4 has a concave portion in which the portion 10 supporting the die stage 1 is lowered by one step from the portion 11 supporting the inner leads 8.
【０００４】[0004]
【発明が解決しようとする課題】上記従来のワイヤボン
ディング装置では、組立てるべき半導体装置の品種が変
更になった場合、それぞれの品種によりリードフレーム
のダイステージの大きさ、インナーリードとダイステー
ジとの段差等が異なるため、ヒートコマも交換しなけれ
ばならない。In the conventional wire bonding apparatus described above, when the type of semiconductor device to be assembled is changed, the size of the die stage of the lead frame, the inner lead and the die stage are changed depending on the type. Since the steps are different, the heat coma must be replaced.
【０００５】ところがヒートコマの交換は、その都度位
置合わせや温度設定を行う必要があり、そのための作業
が繁雑となり時間を要する。そこで本発明では、各品種
に共通して使用できるヒートコマとして、凹部のない平
坦なヒートコマを使用することにしたが、ヒートコマが
平坦であると次のような問題が生ずる。However, every time the heat piece is exchanged, it is necessary to perform positioning and temperature setting each time, and the work for that purpose is complicated and takes time. Therefore, in the present invention, a flat heat coma having no recess is used as a heat coma that can be commonly used for each type, but if the heat coma is flat, the following problems occur.
【０００６】平坦なヒートコマを使用する場合、図７に
示すように、ダイステージ１を支持しているリードフレ
ームのサポートバー１２を従来のクランパ１３で押圧す
ると、リードフレームは図の如く変形し、ダイステージ
１が浮き上り、ヒートコマ４からの熱の伝導が悪くなっ
たり、超音波によるワイヤボンディングの際の超音波の
伝わりが悪くなる。さらには半導体素子２がダイステー
ジ１から剥離することがある。When a flat heat piece is used, when the support bar 12 of the lead frame supporting the die stage 1 is pressed by the conventional clamper 13 as shown in FIG. 7, the lead frame is deformed as shown in FIG. The die stage 1 floats up, heat conduction from the heat piece 4 deteriorates, and transmission of ultrasonic waves during wire bonding by ultrasonic waves deteriorates. Further, the semiconductor element 2 may be separated from the die stage 1.
【０００７】本発明は上記従来の問題点に鑑み、組立す
べき半導体装置の品種が変わっても、ヒートコマの交換
を必要とせず、且つ安定したワイヤボンディングができ
るワイヤボンディング装置及び半導体装置組立方法を実
現しようとする。In view of the above-mentioned conventional problems, the present invention provides a wire bonding apparatus and a semiconductor device assembling method which do not require replacement of a heat coma and can perform stable wire bonding even if the type of a semiconductor device to be assembled changes. Try to make it happen.
【０００８】[0008]
【課題を解決するための手段】本発明のワイヤボンディ
ング装置に於いては、リードフレーム２６をヒートコマ
２０上に載置し、該リードフレーム２６のインナーリー
ド２２と、該リードフレーム２６のダイステージ２１に
搭載された半導体素子２５の電極２８との間を細線２９
により電気的に接続するワイヤボンディング装置におい
て、上記ヒートコマ２０は、リードフレーム２６を支承
する面が平坦であることを特徴とする。In the wire bonding apparatus of the present invention, the lead frame 26 is placed on the heating piece 20, the inner lead 22 of the lead frame 26 and the die stage 21 of the lead frame 26. A thin wire 29 between the electrode 28 of the semiconductor element 25 mounted on the
In the wire bonding apparatus which is electrically connected by means of the above, the heating piece 20 is characterized in that the surface supporting the lead frame 26 is flat.
【０００９】また、リードフレーム２６をヒートコマ２
０上に載置し、該リードフレーム２６のインナーリード
２２と、該リードフレーム２６のダイステージ２１に搭
載された半導体素子２５の電極２８との間を細線２９に
より電気的に接線するワイヤボンディング装置におい
て、上記リードフレーム２６をヒートコマ２０上に押圧
固定するためのクランパ２７は、リードフレーム２６の
サポートバー３２を押圧する部分に弾性手段を用いたこ
とを特徴とする。また、それに加えて、上記弾性手段が
板ばね３０であることを特徴とする。Further, the lead frame 26 is attached to the heat piece 2
Wire bonding apparatus that is placed on the substrate 0 and electrically connects the inner lead 22 of the lead frame 26 and the electrode 28 of the semiconductor element 25 mounted on the die stage 21 of the lead frame 26 with a thin wire 29. In the above, the clamper 27 for pressing and fixing the lead frame 26 on the heat piece 20 is characterized in that an elastic means is used in a portion of the lead frame 26 for pressing the support bar 32. In addition to that, the elastic means is a leaf spring 30.
【００１０】また、本発明の半導体装置組立方法に於い
ては、ダイステージ２１の下面がインナーリード２２の
下面より突出しているリードフレーム２６を用い、その
ダイステージ２１上に搭載された半導体素子２５の電極
２８と、インナーリード２２間を細線２９によりワイヤ
ボンディングする半導体装置組立方法において、上記リ
ードフレーム２６は、請求項１に記載のヒートコマ２０
上に載置され、且つ請求項２に記載のクランパ２７によ
りヒートコマ２０に押圧固定されることを特徴とする。Further, in the semiconductor device assembling method of the present invention, the lead frame 26 in which the lower surface of the die stage 21 projects from the lower surface of the inner lead 22 is used, and the semiconductor element 25 mounted on the die stage 21 is used. In the semiconductor device assembling method of wire-bonding the electrode 28 and the inner lead 22 with a thin wire 29, the lead frame 26 is the heat piece 20 according to claim 1.
It is characterized in that it is placed on top and fixed to the heat piece 20 by the clamper 27 according to the second aspect.
【００１１】この構成を採ることにより、組立すべき半
導体装置の品種が変わっても、ヒートコマの交換を必要
とせず、且つ安定したワイヤボンディングができるワイ
ヤボンディング装置及び半導体装置組立方法が得られ
る。By adopting this structure, it is possible to obtain a wire bonding apparatus and a semiconductor device assembling method which do not require replacement of a heat piece and can perform stable wire bonding even if the type of semiconductor device to be assembled changes.
【００１２】[0012]
【作用】本発明では、ヒートコマを平坦としたことによ
り、異なる複数種類のリードフレームに共通して使用で
きるため、組立すべき半導体装置の品種が変ってもヒー
トコマは交換する必要がない。また、クランパに弾性手
段を用いたことにより、リードフレームに無理な力が掛
らず、リードフレームの変形を抑えることができ、安定
したボンディングが可能となる。According to the present invention, since the heat pieces are made flat, they can be commonly used for a plurality of different types of lead frames, so that the heat pieces do not need to be replaced even if the type of semiconductor device to be assembled changes. In addition, since the elastic means is used for the clamper, an excessive force is not applied to the lead frame, deformation of the lead frame can be suppressed, and stable bonding can be performed.
【００１３】[0013]
【実施例】図１は本発明のワイヤボンディング装置の第
１の実施例におけるヒートコマを示す図で、（ａ）は平
面図、（ｂ）は（ａ）図のｂ−ｂ線における断面図、
（ｃ）は（ｃ）図のｃ−ｃ線における断面図である。本
実施例におけるヒートコマ２０は、同図に示すように、
両側端が傾斜した板で、上面に載置されるリードフレー
ム（仮想線で示す）のダイステージ２１を支承する部分
と、インナーリード２２を支承する部分とを同一平面と
している。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 is a view showing a heat coma in a wire bonding apparatus according to a first embodiment of the present invention, in which (a) is a plan view and (b) is a sectional view taken along line bb of FIG.
(C) is sectional drawing in the cc line of (c) figure. The heat piece 20 in this embodiment is, as shown in FIG.
A plate whose both ends are inclined has the same plane as the part of the lead frame (shown by phantom lines) mounted on the upper surface that supports the die stage 21 and the part that supports the inner leads 22.
【００１４】このように構成された本実施例のヒートコ
マは図２の如くにして用いられる。先ず（ａ）図の如く
ヒータブロック２３にヒートコマ２０をセットし、その
ヒータ２４に通電してヒートコマ２０が所定の温度とな
るように調節しておく。次いで予め半導体素子２５を搭
載したリードフレーム２６をヒートコマ２０の上面に載
置する。この状態ではインナーリード２２はダイステー
ジ２１との段差分だけヒートコマ２０の表面より浮き上
がっている。The heat coma of the present embodiment thus constructed is used as shown in FIG. First, as shown in FIG. 3A, the heating piece 20 is set on the heater block 23, and the heater 24 is energized to adjust the heating piece 20 to a predetermined temperature. Next, the lead frame 26 on which the semiconductor element 25 is mounted in advance is mounted on the upper surface of the heat piece 20. In this state, the inner lead 22 is lifted above the surface of the heat piece 20 by the level difference with the die stage 21.
【００１５】次いで（ｂ）図の如くインナーリード２２
及び図示なきサポートバーをクランパ２７で押圧し、イ
ンナーリード２２をヒートコマ２０の表面に密着させ
る。次いで、この状態で半導体素子２５の電極２８とイ
ンナーリード２２間を図示なきボンディングヘッドによ
り細線２９を用いてワイヤボンディングする。次いで
（ｃ）図の如くクランパ２７の押圧を解除すればリード
フレーム２６は元の形状に復元する。Then, as shown in (b) of FIG.
A support bar (not shown) is pressed by the clamper 27 to bring the inner lead 22 into close contact with the surface of the heat piece 20. Then, in this state, the electrode 28 of the semiconductor element 25 and the inner lead 22 are wire-bonded using a thin wire 29 by a bonding head (not shown). Then, when the pressing of the clamper 27 is released as shown in (c), the lead frame 26 is restored to its original shape.
【００１６】本実施例によれば、ワイヤボンディング時
に図２（ｂ）に示したようにリードフレーム２６のダイ
ステージ２１及びインナーリード２２はヒートコマ２０
の表面に密着するためヒートコマ２０からの熱伝導は確
保され、またボンディングヘッドからの超音波の伝導も
確保され、安定したワイヤボンディングが可能となる。
またヒートコマ２０のリードフレームを支承する面が平
面であるため、品種の異なる複数のリードフレームに対
応することができる。According to this embodiment, at the time of wire bonding, the die stage 21 and the inner lead 22 of the lead frame 26 are heated as shown in FIG.
The heat conduction from the heat piece 20 is secured because it is in close contact with the surface of the, and the conduction of ultrasonic waves from the bonding head is also secured, which enables stable wire bonding.
Further, since the surface of the heat piece 20 that supports the lead frame is a flat surface, it is possible to handle a plurality of lead frames of different types.
【００１７】図３は本発明のワイヤボンディング装置の
第２の実施例におけるクランパを示す図で、（ａ）は下
面図、（ｂ）は（ａ）図のｂ−ｂ線における拡大断面
図、（ｃ）は（ａ）図のｃ−ｃ線における拡大断面図で
ある。本実施例のクランパ２７は、同図に示すようにリ
ードフレームのダイステージを支持しているサポートバ
ーを押圧する部分を弾性手段により押圧するようにした
もので、図においてはこの弾性手段として板ばね３０を
用いている。なおインナーリードを押圧する部分３１は
従来と同様に剛体である。3A and 3B are views showing a clamper in a second embodiment of the wire bonding apparatus of the present invention. FIG. 3A is a bottom view, FIG. 3B is an enlarged sectional view taken along line bb in FIG. (C) is an enlarged sectional view taken along the line cc of (a). In the clamper 27 of this embodiment, as shown in the same figure, the portion of the lead frame that supports the die stage is pressed by elastic means. In the figure, a plate is used as this elastic means. The spring 30 is used. The portion 31 that presses the inner lead is a rigid body as in the conventional case.
【００１８】このように構成された本実施例のワイヤボ
ンディング装置は図４の如くにして用いられる。先ず
（ａ）図の如く平坦なヒートコマ２０上に予め半導体素
子２５を搭載したリードフレーム２６を載置し、そのサ
ポートバー３２をクランパ２７の板ばね３０で押圧す
る。また（ｂ）図の如くインナーリード２２をクランパ
２７のインナーリード押圧部３１で押圧してリードフレ
ーム２６をヒートコマ２０上に固定する。次いで、図示
なきボンディングヘッドにより半導体素子２５の電極２
８とインナーリード２２間を細線２９でワイヤボンディ
ングする。The wire bonding apparatus of this embodiment having the above structure is used as shown in FIG. First, as shown in FIG. 3A, the lead frame 26 having the semiconductor element 25 previously mounted thereon is placed on the flat heat piece 20, and the support bar 32 thereof is pressed by the leaf spring 30 of the clamper 27. Further, as shown in (b), the inner lead 22 is pressed by the inner lead pressing portion 31 of the clamper 27 to fix the lead frame 26 on the heat piece 20. Then, an electrode 2 of the semiconductor element 25 is formed by a bonding head (not shown).
8 and the inner lead 22 are wire-bonded with a thin wire 29.
【００１９】本実施例によれば、平坦なヒートコマ２０
上にリードフレーム２６を支承し、そのサポートバー３
２を板ばね３０で押圧固定した場合、図４の如くサポー
トバー３２に無理な力が掛からないため、従来の如くダ
イステージ２１の浮き上りはなく、安定したワイヤボン
ディングができる。なお本実施例においては、組立すべ
き半導体装置の品種が変った場合にはヒートコマ２０の
交換は必要ないが、クランパ２７はその都度交換する必
要がある。According to this embodiment, the flat heat piece 20 is used.
The lead frame 26 is supported on the support bar 3
When 2 is pressed and fixed by the leaf spring 30, since the support bar 32 does not exert an unreasonable force as shown in FIG. 4, the die stage 21 does not lift up as in the conventional case, and stable wire bonding can be performed. In this embodiment, when the type of the semiconductor device to be assembled changes, the heat piece 20 does not need to be replaced, but the clamper 27 needs to be replaced each time.
【００２０】次に本発明の半導体装置の組立方法につい
て説明する。本発明方法はダイステージの下面がインナ
ーリードの下面より突出しているリードフレームを用い
る場合、前記ワイヤボンディング装置の第１の実施例で
説明した図１の、上面が平坦なヒートコマ２０を用い、
該ヒートコマにリードフレームを押圧固定するクランパ
には前記ワイヤボンディング装置の第２の実施例で説明
した図３の、板ばね方式のクランパ２７を用いてワイヤ
ボンディングを行なうものであり、その作用・効果は前
述した通りである。Next, a method of assembling the semiconductor device of the present invention will be described. In the method of the present invention, when a lead frame in which the lower surface of the die stage projects from the lower surface of the inner lead is used, the heat coma 20 having the flat upper surface of FIG. 1 described in the first embodiment of the wire bonding apparatus is used,
Wire clamping is performed by using the leaf spring type clamper 27 of FIG. 3 described in the second embodiment of the wire bonding apparatus as the clamper for pressing and fixing the lead frame to the heat piece. Is as described above.
【００２１】[0021]
【発明の効果】本発明に依れば、平坦なヒートコマを用
い、且つサポートバーを押圧するのに弾性手段を用いた
ことにより、安定したワイヤボンディングができ、且つ
品種の変更毎にヒートコマを交換する必要がないため半
導体装置組立の省力化に寄与することができる。According to the present invention, since a flat heat piece is used and an elastic means is used to press the support bar, stable wire bonding can be performed, and the heat piece is exchanged every time the type of product is changed. Since it is not necessary to do so, it can contribute to labor saving of semiconductor device assembly.
【図１】本発明のワイヤボンディング装置の第１の実施
例におけるヒートコマを示す図で（ａ）は平面図、
（ｂ）は（ａ）図のｂ−ｂ線における断面図、（ｃ）は
（ａ）図のｃ−ｃ線における断面図である。FIG. 1 is a diagram showing a heat coma in a wire bonding apparatus according to a first embodiment of the present invention, FIG.
(B) is sectional drawing in the bb line of (a) figure, (c) is sectional drawing in the cc line of (a) figure.
【図２】本発明のワイヤボンディング装置の第１の実施
例の作用を説明するための図である。FIG. 2 is a diagram for explaining the operation of the first embodiment of the wire bonding apparatus of the present invention.
【図３】本発明のワイヤボンディング装置の第２の実施
例におけるクランパを示す図で、（ａ）は下面図、
（ｂ）は（ａ）図のｂ−ｂ線における断面図、（ｃ）は
（ａ）図のｃ−ｃ線における断面図である。FIG. 3 is a diagram showing a clamper in a second embodiment of the wire bonding apparatus of the present invention, (a) is a bottom view,
(B) is sectional drawing in the bb line of (a) figure, (c) is sectional drawing in the cc line of (a) figure.
【図４】本発明のワイヤボンディング装置の第２の実施
例の作用を説明するための図である。FIG. 4 is a diagram for explaining the operation of the second embodiment of the wire bonding apparatus of the present invention.
【図５】従来のワイヤボンディング方法を説明するため
の図である。FIG. 5 is a diagram for explaining a conventional wire bonding method.
【図６】従来のヒートコマを示す図で、（ａ）は平面
図、（ｂ）は（ａ）図のｂ−ｂ線における断面図、
（ｃ）は（ａ）図のｃ−ｃ線における断面図である。6A and 6B are views showing a conventional heat coma, where FIG. 6A is a plan view, FIG. 6B is a sectional view taken along line bb in FIG. 6A,
(C) is sectional drawing in the cc line of (a) figure.
【図７】発明が解決しようとする課題を説明するための
図である。FIG. 7 is a diagram for explaining a problem to be solved by the invention.
２０…ヒートコマ ２１…ダイステージ ２２…インナーリード ２３…ヒータブロック ２４…ヒータ ２５…半導体素子 ２６…リードフレーム ２７…クランパ ２８…電極 ２９…細線 ３０…板ばね ３１…インナーリード押圧部 ３２…サポートバー 20 ... Heat coma 21 ... Die stage 22 ... Inner lead 23 ... Heater block 24 ... Heater 25 ... Semiconductor element 26 ... Lead frame 27 ... Clamper 28 ... Electrode 29 ... Fine wire 30 ... Leaf spring 31 ... Inner lead pressing part 32 ... Support bar
Claims (4)
（２０）上に載置し、該リードフレーム（２６）のイン
ナーリード（２２）と、該リードフレーム（２６）のダ
イステージ（２１）に搭載された半導体素子（２５）の
電極（２８）との間を細線（２９）により電気的に接続
するワイヤボンディング装置において、 上記ヒートコマ（２０）は、リードフレーム（２６）を
支承する面が平坦であることを特徴とするワイヤボンデ
ィング装置。1. A lead frame (26) is placed on a heat piece (20) and mounted on an inner lead (22) of the lead frame (26) and a die stage (21) of the lead frame (26). In the wire bonding apparatus for electrically connecting the electrode (28) of the semiconductor element (25) with the thin wire (29), the heat frame (20) has a flat surface for supporting the lead frame (26). A wire bonding apparatus characterized in that
（２０）上に載置し、該リードフレーム（２６）のイン
ナーリード（２２）と、該リードフレーム（２６）のダ
イステージ（２１）に搭載された半導体素子（２５）の
電極（２８）との間を細線（２９）により電気的に接続
するワイヤボンディング装置において、 上記リードフレーム（２６）をヒートコマ（２０）上に
押圧固定するためのクランパ（２７）は、リードフレー
ム（２６）のサポートバー（３２）を押圧する部分に弾
性手段を用いたことを特徴とするワイヤボンディング装
置。2. A lead frame (26) is placed on a heat piece (20) and mounted on an inner lead (22) of the lead frame (26) and a die stage (21) of the lead frame (26). In the wire bonding apparatus for electrically connecting the electrode (28) of the semiconductor element (25) with the thin wire (29), the clamper (for fixing the lead frame (26) onto the heat piece (20) is fixed. 27) A wire bonding apparatus characterized in that an elastic means is used in a portion of the lead frame (26) that presses the support bar (32).
とを特徴とする請求項２のワイヤボンディング装置。3. The wire bonding apparatus according to claim 2, wherein the elastic means is a leaf spring (30).
リード（２２）の下面より突出しているリードフレーム
（２６）を用い、そのダイステージ（２１）上に搭載さ
れた半導体素子（２５）の電極（２８）と、インナーリ
ード（２２）間を細線（２９）によりワイヤボンディン
グする半導体装置の組立方法において、 上記リードフレーム（２６）は、請求項１に記載のヒー
トコマ（２０）上に載置され、且つ請求項２に記載のク
ランパ（２７）によりヒートコマ（２０）に押圧固定さ
れることを特徴とする半導体装置組立方法。4. A lead frame (26) having a lower surface of a die stage (21) protruding from a lower surface of an inner lead (22) is used, and an electrode of a semiconductor element (25) mounted on the die stage (21). In a method for assembling a semiconductor device, wherein a wire (29) is wire-bonded between the inner lead (22) and the inner lead (22), the lead frame (26) is placed on the heat piece (20) according to claim 1. A semiconductor device assembling method, wherein the semiconductor device assembly is fixed to the heat piece (20) by the clamper (27) according to claim 2.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7008443A JPH08203948A (en) | 1995-01-23 | 1995-01-23 | Wire bonding equipment and semiconductor device assembling method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7008443A JPH08203948A (en) | 1995-01-23 | 1995-01-23 | Wire bonding equipment and semiconductor device assembling method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH08203948A true JPH08203948A (en) | 1996-08-09 |
Family
ID=11693277
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7008443A Withdrawn JPH08203948A (en) | 1995-01-23 | 1995-01-23 | Wire bonding equipment and semiconductor device assembling method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH08203948A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100237324B1 (en) * | 1997-07-15 | 2000-01-15 | 김규현 | Inner lead clamp construction of wire bonding system for manufacturing semiconductor package and wire bonding method thereof |
| KR100403140B1 (en) * | 1999-12-17 | 2003-10-30 | 앰코 테크놀로지 코리아 주식회사 | heat block device for manufacturing semiconductor package |
-
1995
- 1995-01-23 JP JP7008443A patent/JPH08203948A/en not_active Withdrawn
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100237324B1 (en) * | 1997-07-15 | 2000-01-15 | 김규현 | Inner lead clamp construction of wire bonding system for manufacturing semiconductor package and wire bonding method thereof |
| KR100403140B1 (en) * | 1999-12-17 | 2003-10-30 | 앰코 테크놀로지 코리아 주식회사 | heat block device for manufacturing semiconductor package |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH08255862A (en) | Lead frame, resin sealed semiconductor device, manufacture thereof, and molding die | |
| JPH08203948A (en) | Wire bonding equipment and semiconductor device assembling method | |
| JP3384762B2 (en) | Method for manufacturing semiconductor device | |
| JP3344223B2 (en) | Chip thermocompression device | |
| JPH04287939A (en) | Bonding tool | |
| JP3022910B2 (en) | Method for manufacturing semiconductor device | |
| JP3688760B2 (en) | Resin package type semiconductor device and manufacturing method thereof | |
| JP4604384B2 (en) | Circuit board mounting method | |
| JPH0758143A (en) | Wire bonding device | |
| US5202289A (en) | Method of plastically deforming a semiconductor device lead frame in preparation for ultrasonic bonding | |
| JPH0296342A (en) | Wire-bonding device | |
| JPH05121478A (en) | Lead-frame pressure jig of wire bonding apparatus | |
| KR100673943B1 (en) | Clamping apparatus of lead frame | |
| KR200213531Y1 (en) | Heater Block of Semiconductor Manufacturing Equipment | |
| JP2602278B2 (en) | Resin-sealed semiconductor device | |
| JPH06177316A (en) | Lead frame for tab mounting and its mounting method | |
| JPH01198038A (en) | Semiconductor manufacturing apparatus | |
| JPH03233947A (en) | Lead-frame inner-lead holding-down jig | |
| JP3514432B2 (en) | Lead frame manufacturing method | |
| JPH08274130A (en) | Thermocompression bonding device for electronic parts | |
| JPH06349881A (en) | Wire bonder | |
| JPH06260525A (en) | Wire bonding device | |
| JPH11307579A (en) | Carrier for flip chip mounting | |
| JPH1050913A (en) | Heat treatment method for lead frame, and jig for heat treatment used therefor | |
| KR970002101Y1 (en) | Wire bonding device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A300 | Withdrawal of application because of no request for examination |
Free format text: JAPANESE INTERMEDIATE CODE: A300 Effective date: 20020402 |