JPH0793296B2 - シリコン酸化膜の形成方法 - Google Patents

シリコン酸化膜の形成方法

Info

Publication number
JPH0793296B2
JPH0793296B2 JP4-501476A JP50147692A JPH0793296B2 JP H0793296 B2 JPH0793296 B2 JP H0793296B2 JP 50147692 A JP50147692 A JP 50147692A JP H0793296 B2 JPH0793296 B2 JP H0793296B2
Authority
JP
Japan
Prior art keywords
film
gas
thin film
silicon oxide
temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP4-501476A
Other languages
English (en)
Japanese (ja)
Other versions
JPH06508572A (ja
JPWO1992012535A1 (ja
Inventor
敦弘 筑根
雄二 古村
正信 畠田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US07/722,923 external-priority patent/US5165985A/en
Priority claimed from US07/722,956 external-priority patent/US5314732A/en
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority claimed from PCT/US1992/004422 external-priority patent/WO1993000221A1/en
Publication of JPWO1992012535A1 publication Critical patent/JPWO1992012535A1/ja
Publication of JPH06508572A publication Critical patent/JPH06508572A/ja
Publication of JPH0793296B2 publication Critical patent/JPH0793296B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Formation Of Insulating Films (AREA)
JP4-501476A 1991-01-08 1991-12-19 シリコン酸化膜の形成方法 Expired - Lifetime JPH0793296B2 (ja)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
JP3-734 1991-01-08
JP3-62133 1991-03-26
US07/722,923 US5165985A (en) 1991-06-28 1991-06-28 Method of making a flexible, transparent film for electrostatic shielding
US722,923 1991-06-28
US722,956 1991-06-28
US07/722,956 US5314732A (en) 1991-06-28 1991-06-28 Flexible, transparent film for electrostatic shielding
PCT/US1992/004422 WO1993000221A1 (en) 1991-06-28 1992-05-26 A flexible, transparent film for electrostatic shielding and method of making such film

Publications (3)

Publication Number Publication Date
JPWO1992012535A1 JPWO1992012535A1 (ja) 1993-01-14
JPH06508572A JPH06508572A (ja) 1994-09-29
JPH0793296B2 true JPH0793296B2 (ja) 1995-10-09

Family

ID=27274578

Family Applications (2)

Application Number Title Priority Date Filing Date
JP4-501476A Expired - Lifetime JPH0793296B2 (ja) 1991-01-08 1991-12-19 シリコン酸化膜の形成方法
JP4501476A Pending JPH0793296B1 (show.php) 1991-01-08 1991-12-19

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP4501476A Pending JPH0793296B1 (show.php) 1991-01-08 1991-12-19

Country Status (1)

Country Link
JP (2) JPH0793296B2 (show.php)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002538604A (ja) * 1999-02-26 2002-11-12 トリコン ホールディングス リミティド ポリマー層の処理方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5494878A (en) * 1978-01-11 1979-07-26 Hitachi Ltd Surface stabilizing method of semiconductor elements
JPH01307247A (ja) * 1988-06-03 1989-12-12 Fuji Xerox Co Ltd 半導体装置の製造方法
IT1226701B (it) * 1988-07-29 1991-02-05 Eniricerche Spa Procedimento per la deposizione di organosilani su substrati di silicio o di ossido di silicio per dispositivi del tipo eos o chemfet.
JPH02262336A (ja) * 1989-04-03 1990-10-25 Toshiba Corp 薄膜形成方法
JP2772819B2 (ja) * 1989-04-26 1998-07-09 株式会社高純度化学研究所 半導体装置の酸化膜の製造法

Also Published As

Publication number Publication date
JPH0793296B1 (show.php) 1995-10-09

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