JPH0789414B2 - 光学記憶素子 - Google Patents

光学記憶素子

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Publication number
JPH0789414B2
JPH0789414B2 JP61020449A JP2044986A JPH0789414B2 JP H0789414 B2 JPH0789414 B2 JP H0789414B2 JP 61020449 A JP61020449 A JP 61020449A JP 2044986 A JP2044986 A JP 2044986A JP H0789414 B2 JPH0789414 B2 JP H0789414B2
Authority
JP
Japan
Prior art keywords
film
optical
storage element
optical storage
magneto
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP61020449A
Other languages
English (en)
Other versions
JPS62177736A (ja
Inventor
知之 三宅
善照 村上
博之 片山
明 高橋
賢司 太田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
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Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=12027372&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=JPH0789414(B2) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP61020449A priority Critical patent/JPH0789414B2/ja
Priority to US07/009,211 priority patent/US4956243A/en
Priority to DE3785375T priority patent/DE3785375T3/de
Priority to EP87300908A priority patent/EP0233034B2/en
Publication of JPS62177736A publication Critical patent/JPS62177736A/ja
Publication of JPH0789414B2 publication Critical patent/JPH0789414B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
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Description

【発明の詳細な説明】 〈技術分野〉 本発明は光学的に情報を記録・再生あるいは消去をする
光学記憶素子に関する。
〈従来技術〉 近年、情報処理技術の分野においては、情報の多量化お
よび多様性の急速な進行に伴い、磁気メモリの容量増大
などに対する要求が著しく高くなりつつある。そこで従
来の記録方式に代るものとして光記録用媒体を用いた光
記録方式が考えられ実用化されている。しかし、現在消
去及び再書込み可能な光ディスクはまだ実用化しておら
ず、早急な開発実用化が期待されている。
消去，再書込み可能な光メモリとしては光磁気媒体を用
いたもの、いわゆる磁気カー効果を用いたものや、非晶
質カルコゲナイドのフォトダークニング現象を用いたも
の、媒体の相変化による光反射率の変化を用いたもの等
があるが、この中で最も有望な方法が光磁気媒体を用い
たものであった。
光磁気媒体には、希土類−遷移金属アモルファス合金を
用いたものがあるが、これは信号読出し特性に重要なカ
ー回転角が未だ小さいという欠点をもっている。そこで
光磁気媒体の磁気カー回転角を増大させる方法が数多く
試みられてきた。その中の１つとして、反射膜構造を持
った多層膜とし見かけの磁気カー回転角を増大させ、信
号品質を向上させる方法がある。この方法では入射光の
１部が磁性膜の表面でカー効果を受けて反射し、その他
は媒体中に入り、裏面から抜け出た所で反射膜によって
元に返し磁性体内部でのファラデー効果を使うことで見
かけのカー回転角が大きくなり、C/Nの増加を計ってい
る。
第２図は従来の光磁気ディスクの構成図であり１はガラ
スまたはプラスチック板、２はAlN膜、３はGdTbFe膜、
４はAlN膜、５はAl膜である。
この場合、反射膜にはより大きな反射率が望まれる。従
って、反射膜に用いられる材料は半導体レーザー波長域
で反射率の高いAl,Cu,Au,Ag等であった。しかしながら
これらの材料は一般に熱伝導率が大きく光磁気ディスク
の記録感度を低下させる。
この問題は光磁気ディスクだけの問題でなく、一般にレ
ーザの熱を利用して情報を記録する反射型の光記録媒体
では同じ問題がある。
〈発明の目的〉 本発明は光記録媒体の反射膜を２層構造とすることによ
り、信号再生特性が良く、記録感度の高い光記録媒体を
提供することを目的とする。
〈実施例〉 以下本発明に係る光記憶素子の一実施例としての光磁気
ディスクを図面を用いて詳細に説明する。
第１図は本発明に係る光磁気ディスクの構成図である。
同図においてガラスまたはプラスチック板からなる透明
基板１上に第１誘電層としてのAlN膜２を膜厚800Å、光
磁気記録媒体としてのGdTbFe膜３を膜厚200Å、第２誘
電層としてのAlN膜４を膜厚250Å、第１反射膜としての
Al膜６を膜厚100Å、第２反射膜としてのNi膜７を膜厚5
00Å、成膜して光磁気ディスクを構成し、見かけ上の磁
気カー回転角を増大させると同時にその記録感度の低下
を防いでいる。上記の如く相対的に光の反射率の充分大
きいAlを反射膜の第１層に用い、熱伝導率の充分小さい
Niを反射膜の第２層に用いることにより、従来の単一金
属の反射膜で得られなかった高反射率，高記録感度の記
録媒体を構成できたものであった。
第３図は反射膜を上記２層構造とした場合、Ni膜の膜厚
を500Å一定としてAlの膜厚を０〜200Åと変化した場合
のカー回転角，反射率，だ円率の変化を示す。Alが厚く
なるとNi膜の光学的な効果は薄れてAl単層膜とほぼ同じ
特性になる。Al膜膜厚が100Åにおいてカー回転角1.1de
g,反射率17％，だ円率0.02とAl単層膜の場合に比較して
それぞれ同程度の数値を示した。この場合記録感度の低
下の原因となるAl部分の厚さは100Åしかなく反射膜の
大部分は熱伝導率がAlの半分以下のNiで構成されてい
る。
なお、反射膜の第１層としてはAlの他にCu,Au,Ag等の反
射率の高い金属、第２層としてはTh,Ta等の熱伝導率の
低いものを用いても同様の効果が得られる。また、熱伝
導率はAlにNi等の元素を加えても低下するので第２層と
してNi単体ではなく、AlNi等の２元合金膜を用いても良
い。
以上の本発明の主旨は光メモリにおける反射膜を２層構
造とすることにより、信号再生特性が良く、記録感度の
高い光記録媒体を提供することにあるものであり、第１
層，第２層の材料はこれらに限定されるものではない。
〈発明の効果〉 以上のように本発明の光学記憶素子は、光記録媒体上
に、第１の金属膜とこの第１の金属膜より相対的に熱伝
導率の充分小さい第２の金属膜をこの順に形成して第１
及び第２の金属膜の２層構造からなる金属膜をレーザの
反射膜として用いるように成しているため、光学記憶素
子における反射率を低下させることなく、従来問題とな
っていた記録感度の低下を防止し、高記録感度を有する
光学記憶素子を得ることが出来る。
【図面の簡単な説明】
第１図は本発明に係る光磁気記録用媒体の断面図、第２
図は従来の水磁気記録用媒体の断面図、第３図はAl膜厚
を変化させた場合のカー回転角，反射率，だ円率のグラ
フ図を示す。 図中、 1:ガラスまたはプラスチック基板、2:AlN膜、3:GdTbFe
等光磁気媒体、4:AlN膜、5:AlまたはCu膜、6:Al膜、7:N
i膜
───────────────────────────────────────────────────── フロントページの続き (72)発明者 高橋 明 大阪府大阪市阿倍野区長池町22番22号 シ ヤープ株式会社内 (72)発明者 太田 賢司 大阪府大阪市阿倍野区長池町22番22号 シ ヤープ株式会社内 (56)参考文献 特開 昭61−68748（ＪＰ，Ａ) 特開 昭60−195747（ＪＰ，Ａ) 特開 昭59−92449（ＪＰ，Ａ) 実開 昭60−74224（ＪＰ，Ｕ)

Claims (2)

    【特許請求の範囲】
  1. 【請求項１】光記録媒体上に、アルミニウム（Al）膜
    と、該アルミニウム膜より相対的に熱伝導率の充分小さ
    い金属膜をこの順に形成して金属膜の２層構造からなる
    金属膜をレーザの反射膜として用いるようになしたこと
    を特徴とする光学記憶素子。
  2. 【請求項２】前記アルミニウム膜より相対的に熱伝導率
    の充分小さい金属膜としてニッケル（Ni）膜を用いるこ
    とを特徴とする特許請求の範囲第１項記載の光学記憶素
    子。
JP61020449A 1986-01-31 1986-01-31 光学記憶素子 Expired - Fee Related JPH0789414B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP61020449A JPH0789414B2 (ja) 1986-01-31 1986-01-31 光学記憶素子
US07/009,211 US4956243A (en) 1986-01-31 1987-01-30 Optical memory element
DE3785375T DE3785375T3 (de) 1986-01-31 1987-02-02 Element mit optischem Gedächtnis.
EP87300908A EP0233034B2 (en) 1986-01-31 1987-02-02 Optical memory element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61020449A JPH0789414B2 (ja) 1986-01-31 1986-01-31 光学記憶素子

Publications (2)

Publication Number Publication Date
JPS62177736A JPS62177736A (ja) 1987-08-04
JPH0789414B2 true JPH0789414B2 (ja) 1995-09-27

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP61020449A Expired - Fee Related JPH0789414B2 (ja) 1986-01-31 1986-01-31 光学記憶素子

Country Status (4)

Country Link
US (1) US4956243A (ja)
EP (1) EP0233034B2 (ja)
JP (1) JPH0789414B2 (ja)
DE (1) DE3785375T3 (ja)

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Also Published As

Publication number Publication date
DE3785375T3 (de) 1997-02-27
EP0233034A3 (en) 1989-02-15
JPS62177736A (ja) 1987-08-04
DE3785375T2 (de) 1993-07-29
EP0233034A2 (en) 1987-08-19
DE3785375D1 (de) 1993-05-19
EP0233034B2 (en) 1996-08-28
US4956243A (en) 1990-09-11
EP0233034B1 (en) 1993-04-14

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