JPH0785973A - Organic thin film el element - Google Patents
Organic thin film el elementInfo
- Publication number
- JPH0785973A JPH0785973A JP5231380A JP23138093A JPH0785973A JP H0785973 A JPH0785973 A JP H0785973A JP 5231380 A JP5231380 A JP 5231380A JP 23138093 A JP23138093 A JP 23138093A JP H0785973 A JPH0785973 A JP H0785973A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- thin film
- organic thin
- organic
- light emitting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 47
- 239000010410 layer Substances 0.000 claims abstract description 158
- 150000001875 compounds Chemical class 0.000 claims abstract description 35
- 239000000463 material Substances 0.000 claims abstract description 26
- 238000000034 method Methods 0.000 claims abstract description 23
- 239000000203 mixture Substances 0.000 claims abstract description 18
- 239000002356 single layer Substances 0.000 claims abstract description 7
- 239000004840 adhesive resin Substances 0.000 claims abstract description 5
- 229920006223 adhesive resin Polymers 0.000 claims abstract description 5
- 239000000126 substance Substances 0.000 claims description 51
- 125000003700 epoxy group Chemical group 0.000 claims description 16
- 238000007789 sealing Methods 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 15
- 238000004132 cross linking Methods 0.000 claims description 13
- 230000000379 polymerizing effect Effects 0.000 claims description 13
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
- 229910052744 lithium Inorganic materials 0.000 claims description 8
- 229910052791 calcium Inorganic materials 0.000 claims description 6
- 125000003277 amino group Chemical group 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 3
- 238000002834 transmittance Methods 0.000 claims description 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims 3
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical group [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims 3
- 239000011575 calcium Substances 0.000 claims 3
- 238000001035 drying Methods 0.000 claims 2
- 239000011888 foil Substances 0.000 claims 1
- 229910001512 metal fluoride Inorganic materials 0.000 claims 1
- 229910001092 metal group alloy Inorganic materials 0.000 claims 1
- 229910044991 metal oxide Inorganic materials 0.000 claims 1
- 150000004706 metal oxides Chemical class 0.000 claims 1
- 229910052976 metal sulfide Inorganic materials 0.000 claims 1
- 230000009972 noncorrosive effect Effects 0.000 claims 1
- 239000010408 film Substances 0.000 abstract description 19
- 239000011521 glass Substances 0.000 abstract description 10
- 238000000576 coating method Methods 0.000 abstract description 8
- 239000003960 organic solvent Substances 0.000 abstract description 7
- 239000011248 coating agent Substances 0.000 abstract description 5
- 239000012044 organic layer Substances 0.000 abstract description 5
- 239000004593 Epoxy Substances 0.000 abstract description 4
- 238000006116 polymerization reaction Methods 0.000 abstract description 4
- 239000002904 solvent Substances 0.000 abstract description 4
- 238000002513 implantation Methods 0.000 abstract 1
- -1 tris (8-quinolinol) aluminum Chemical compound 0.000 description 10
- 238000007740 vapor deposition Methods 0.000 description 10
- 238000002347 injection Methods 0.000 description 7
- 239000007924 injection Substances 0.000 description 7
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 6
- HEDRZPFGACZZDS-MICDWDOJSA-N Trichloro(2H)methane Chemical compound [2H]C(Cl)(Cl)Cl HEDRZPFGACZZDS-MICDWDOJSA-N 0.000 description 6
- 230000008018 melting Effects 0.000 description 5
- 238000002844 melting Methods 0.000 description 5
- 229910052709 silver Inorganic materials 0.000 description 5
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 239000003795 chemical substances by application Substances 0.000 description 4
- 229910052738 indium Inorganic materials 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 238000004528 spin coating Methods 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 239000003054 catalyst Substances 0.000 description 3
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 3
- 238000007733 ion plating Methods 0.000 description 3
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- BRLQWZUYTZBJKN-UHFFFAOYSA-N Epichlorohydrin Chemical compound ClCC1CO1 BRLQWZUYTZBJKN-UHFFFAOYSA-N 0.000 description 2
- 229910005793 GeO 2 Inorganic materials 0.000 description 2
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- NRCMAYZCPIVABH-UHFFFAOYSA-N Quinacridone Chemical compound N1C2=CC=CC=C2C(=O)C2=C1C=C1C(=O)C3=CC=CC=C3NC1=C2 NRCMAYZCPIVABH-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000010549 co-Evaporation Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- ZYGHJZDHTFUPRJ-UHFFFAOYSA-N coumarin Chemical compound C1=CC=C2OC(=O)C=CC2=C1 ZYGHJZDHTFUPRJ-UHFFFAOYSA-N 0.000 description 2
- 230000001186 cumulative effect Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 230000009477 glass transition Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 150000002484 inorganic compounds Chemical class 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 125000000325 methylidene group Chemical group [H]C([H])=* 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 238000000425 proton nuclear magnetic resonance spectrum Methods 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 1
- 125000001494 2-propynyl group Chemical group [H]C#CC([H])([H])* 0.000 description 1
- MGADZUXDNSDTHW-UHFFFAOYSA-N 2H-pyran Chemical compound C1OC=CC=C1 MGADZUXDNSDTHW-UHFFFAOYSA-N 0.000 description 1
- OGGKVJMNFFSDEV-UHFFFAOYSA-N 3-methyl-n-[4-[4-(n-(3-methylphenyl)anilino)phenyl]phenyl]-n-phenylaniline Chemical compound CC1=CC=CC(N(C=2C=CC=CC=2)C=2C=CC(=CC=2)C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=C(C)C=CC=2)=C1 OGGKVJMNFFSDEV-UHFFFAOYSA-N 0.000 description 1
- 125000004172 4-methoxyphenyl group Chemical group [H]C1=C([H])C(OC([H])([H])[H])=C([H])C([H])=C1* 0.000 description 1
- ZOKIJILZFXPFTO-UHFFFAOYSA-N 4-methyl-n-[4-[1-[4-(4-methyl-n-(4-methylphenyl)anilino)phenyl]cyclohexyl]phenyl]-n-(4-methylphenyl)aniline Chemical compound C1=CC(C)=CC=C1N(C=1C=CC(=CC=1)C1(CCCCC1)C=1C=CC(=CC=1)N(C=1C=CC(C)=CC=1)C=1C=CC(C)=CC=1)C1=CC=C(C)C=C1 ZOKIJILZFXPFTO-UHFFFAOYSA-N 0.000 description 1
- MVIXNQZIMMIGEL-UHFFFAOYSA-N 4-methyl-n-[4-[4-(4-methyl-n-(4-methylphenyl)anilino)phenyl]phenyl]-n-(4-methylphenyl)aniline Chemical compound C1=CC(C)=CC=C1N(C=1C=CC(=CC=1)C=1C=CC(=CC=1)N(C=1C=CC(C)=CC=1)C=1C=CC(C)=CC=1)C1=CC=C(C)C=C1 MVIXNQZIMMIGEL-UHFFFAOYSA-N 0.000 description 1
- 229910016569 AlF 3 Inorganic materials 0.000 description 1
- 229910016036 BaF 2 Inorganic materials 0.000 description 1
- 229910004261 CaF 2 Inorganic materials 0.000 description 1
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 229910005540 GaP Inorganic materials 0.000 description 1
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 1
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 125000003647 acryloyl group Chemical group O=C([*])C([H])=C([H])[H] 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- JYMITAMFTJDTAE-UHFFFAOYSA-N aluminum zinc oxygen(2-) Chemical compound [O-2].[Al+3].[Zn+2] JYMITAMFTJDTAE-UHFFFAOYSA-N 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 150000008064 anhydrides Chemical class 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 229910002056 binary alloy Inorganic materials 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- XZCJVWCMJYNSQO-UHFFFAOYSA-N butyl pbd Chemical compound C1=CC(C(C)(C)C)=CC=C1C1=NN=C(C=2C=CC(=CC=2)C=2C=CC=CC=2)O1 XZCJVWCMJYNSQO-UHFFFAOYSA-N 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 238000001460 carbon-13 nuclear magnetic resonance spectrum Methods 0.000 description 1
- 239000010406 cathode material Substances 0.000 description 1
- XCJYREBRNVKWGJ-UHFFFAOYSA-N copper(II) phthalocyanine Chemical compound [Cu+2].C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 XCJYREBRNVKWGJ-UHFFFAOYSA-N 0.000 description 1
- 229960000956 coumarin Drugs 0.000 description 1
- 235000001671 coumarin Nutrition 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- VKIRRGRTJUUZHS-UHFFFAOYSA-N cyclohexane-1,4-diamine Chemical compound NC1CCC(N)CC1 VKIRRGRTJUUZHS-UHFFFAOYSA-N 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 150000004985 diamines Chemical class 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 229920006332 epoxy adhesive Polymers 0.000 description 1
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 1
- 239000005038 ethylene vinyl acetate Substances 0.000 description 1
- 229920001109 fluorescent polymer Polymers 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 125000003055 glycidyl group Chemical group C(C1CO1)* 0.000 description 1
- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical compound [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000009545 invasion Effects 0.000 description 1
- IQPQWNKOIGAROB-UHFFFAOYSA-N isocyanate group Chemical group [N-]=C=O IQPQWNKOIGAROB-UHFFFAOYSA-N 0.000 description 1
- 125000005647 linker group Chemical group 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 description 1
- CSHWQDPOILHKBI-UHFFFAOYSA-N peryrene Natural products C1=CC(C2=CC=CC=3C2=C2C=CC=3)=C3C2=CC=CC3=C1 CSHWQDPOILHKBI-UHFFFAOYSA-N 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 229920006255 plastic film Polymers 0.000 description 1
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 1
- 229920002627 poly(phosphazenes) Polymers 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 239000004848 polyfunctional curative Substances 0.000 description 1
- 229920000128 polypyrrole Polymers 0.000 description 1
- 229920000123 polythiophene Polymers 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 239000013464 silicone adhesive Substances 0.000 description 1
- 150000003384 small molecules Chemical class 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- 125000001424 substituent group Chemical group 0.000 description 1
- 238000001308 synthesis method Methods 0.000 description 1
- 229910002058 ternary alloy Inorganic materials 0.000 description 1
- 150000003568 thioethers Chemical class 0.000 description 1
- 125000002023 trifluoromethyl group Chemical group FC(F)(F)* 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
- H10K19/901—Assemblies of multiple devices comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
- Luminescent Compositions (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、有機薄膜のエレクトロ
ルミネセンス(以下単にELという)現象を利用した有
機薄膜EL素子に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an organic thin film EL device utilizing the electroluminescence (hereinafter simply referred to as EL) phenomenon of an organic thin film.
【0002】[0002]
【従来の技術】イーストマン・コダック社のC.W.T
angらにより開発された有機薄膜EL素子は、特開昭
59−194393号公報、特開昭63−264692
号公報、特開昭63−295695号公報、アプライド
・フィジックス・レター第51巻第12号第913頁
(1987年)、およびジャーナル・オブ・アプライド
フィジックス第65巻第9号第3610頁(1989
年)等によれば、一般的には陽極、有機正孔注入輸送
層、有機発光層、陰極の順に構成され、以下のように作
られている。2. Description of the Related Art C. of Eastman Kodak Company. W. T
The organic thin film EL device developed by Ang et al. is disclosed in JP-A-59-194393 and JP-A-63-264692.
Publication No. 63-295695, Applied Physics Letters Vol. 51 No. 12, 913 (1987), and Journal of Applied Physics Vol. 65 No. 9, 3610 (1989).
In general, the anode, the organic hole injecting and transporting layer, the organic light emitting layer, and the cathode are formed in this order, and are manufactured as follows.
【0003】図1に示すように、まず、ガラスや樹脂フ
ィルム等の透明絶縁性の基板(1)上に、蒸着又はスパ
ッタリング法等でインジウムとスズの複合酸化物(以下
ITOという)の透明導電性被膜の陽極(2)が形成さ
れる。次に有機正孔注入輸送層(3)として銅フタロシ
アニン(以下CuPcと略す)、あるいは(化1)で示
される化合物:As shown in FIG. 1, first, on a transparent insulating substrate (1) such as glass or a resin film, a transparent conductive material of a complex oxide of indium and tin (hereinafter referred to as ITO) is formed by vapor deposition or sputtering. The positive electrode (2) of the functional coating is formed. Next, as the organic hole injecting and transporting layer (3), copper phthalocyanine (hereinafter abbreviated as CuPc) or a compound represented by the following (Chemical Formula 1):
【0004】[0004]
【化1】 [Chemical 1]
【0005】1,1−ビス(4−ジ−p−トリルアミノ
フェニル)シクロヘキサン(融点181.4℃〜18
2.4℃)、あるいは(化2)で示される化合物:1,1-bis (4-di-p-tolylaminophenyl) cyclohexane (melting point 181.4 ° C.-18
2.4 ° C.) or a compound represented by (Chemical Formula 2):
【0006】[0006]
【化2】 [Chemical 2]
【0007】N,N,N’,N’−テトラ−p−トリル
−1,1’−ビフェニル−4,4’−ジアミン(融点1
20℃)等のテトラアリールジアミンを、0.1μm程
度以下の厚さに単層または積層して蒸着して形成する。N, N, N ', N'-tetra-p-tolyl-1,1'-biphenyl-4,4'-diamine (melting point 1
(20 ° C.) tetraaryldiamine or the like having a thickness of about 0.1 μm or less is formed as a single layer or a laminated layer by vapor deposition.
【0008】次に有機正孔注入輸送層(3)上にトリス
(8−キノリノール)アルミニウム(以下Alq3 と略
す)等の有機蛍光体を0.1μm程度以下の厚さで蒸着
し、有機発光層(4)を形成する。最後に、その上に陰
極(5)としてMg:Ag,Ag:Eu,Mg:Cu,
Mg:In,Mg:Sn等の合金を共蒸着法により20
0nm程度蒸着している。Next, an organic phosphor such as tris (8-quinolinol) aluminum (hereinafter abbreviated as Alq 3 ) is vapor-deposited on the organic hole injecting and transporting layer (3) to a thickness of about 0.1 μm or less to emit organic light. Form the layer (4). Finally, as a cathode (5), Mg: Ag, Ag: Eu, Mg: Cu, and
An alloy of Mg: In, Mg: Sn, etc. is formed by a co-evaporation method.
The vapor deposition is about 0 nm.
【0009】また、安達らは有機発光層と陰極(5)の
間に、有機電子注入輸送層(6)を設け、図2に示した
素子を作製した。アプライド・フィズィックス・レター
第57巻第6号第531頁(1990年)によると、そ
の素子は、ITOの陽極上に有機正孔注入輸送層(3)
としてN,N’−ジフェニル−N,N’−ビス(3−メ
チルフェニル)−1,1’−ビフェニル−4,4’−ジ
アミン〔融点159〜163℃、ガラス転移温度67℃
(窒素下、10℃/分の昇温速度でDSCで測定);以
下TPDと略す〕、有機発光層(4)として1−〔4−
N,N−ビス(p−メトキシフェニル)アミノスチリ
ル〕ナフタレン、有機電子注入輸送層(6)として2−
(4−ビフェニリル)−5−(4−t−ブチルフェニ
ル)−1,3,4−オキサジアゾール(以下、単にBP
BDという)、陰極(5)としてMgとAgの合金を順
に積層している。Also, Adachi et al. Provided an organic electron injecting and transporting layer (6) between the organic light emitting layer and the cathode (5) to fabricate the device shown in FIG. According to Applied Physics Letters Vol. 57, No. 6, pp. 531 (1990), the device has an organic hole injecting and transporting layer (3) on an ITO anode.
As N, N′-diphenyl-N, N′-bis (3-methylphenyl) -1,1′-biphenyl-4,4′-diamine [melting point 159 to 163 ° C., glass transition temperature 67 ° C.
(Measured by DSC under nitrogen at a temperature rising rate of 10 ° C./min); hereinafter abbreviated as TPD], as the organic light emitting layer (4) 1- [4-
N, N-bis (p-methoxyphenyl) aminostyryl] naphthalene, 2- as organic electron injecting and transporting layer (6)
(4-biphenylyl) -5- (4-t-butylphenyl) -1,3,4-oxadiazole (hereinafter, simply BP
BD) and an alloy of Mg and Ag as a cathode (5) are sequentially laminated.
【0010】以上のように作られた素子は、透明電極側
を陽極として20〜30V以下の直流低電圧を印加する
ことにより発光層に正孔と電子が注入され、その再結合
により発光し1000cd/m2 程度の輝度が得られ
る。しかし、上記で示した正孔注入輸送材料は、CuP
cは耐熱性ではあるが可視光線波長領域の吸収が大き
く、また結晶性であるために蒸着膜が凸凹になり、Cu
Pcのみを有機正孔注入輸送材料として用いた素子はE
L発光の取り出し効率が低く、素子が電気短絡しやすく
なる問題があった。In the device manufactured as described above, holes and electrons are injected into the light emitting layer by applying a direct current low voltage of 20 to 30 V or less with the transparent electrode side serving as an anode, and the light is recombined to emit light of 1000 cd. A brightness of about / m 2 can be obtained. However, the hole injecting and transporting material shown above is CuP.
Although c is heat resistant, it has a large absorption in the visible light wavelength region, and since it is crystalline, the deposited film becomes uneven, and Cu
An element using only Pc as the organic hole injecting and transporting material is E
There was a problem that the extraction efficiency of L emission was low and the element was likely to be electrically short-circuited.
【0011】(化1)(化2)で示した化合物およびT
PDは、非晶質で平滑な蒸着膜が得られ、可視波長領域
での吸収もないが、融点およびガラス転移温度が低いた
め、素子作成プロセスや素子駆動時の発熱により、発光
層と混合してしまったり、時間が経つにつれて膜が結晶
化し凸凹になる問題があった。例えば50nm程度の薄
膜にしてTPDとAlq3 層を積層した場合に於いては
95℃程度の温度で両層が混合してしまった。Compounds represented by (Chemical Formula 1) and (Chemical Formula 2) and T
PD is an amorphous and smooth vapor-deposited film that does not absorb in the visible wavelength region, but has a low melting point and glass transition temperature, so it is mixed with the light-emitting layer due to heat generated during the device manufacturing process and device driving. There was a problem that the film crystallized and became uneven as time passed. For example, when a thin film having a thickness of about 50 nm and TPD and Alq 3 layers were laminated, both layers were mixed at a temperature of about 95 ° C.
【0012】また、スピンコート法等の有機溶剤を用い
た塗布法で有機正孔注入輸送層を多層化する場合や、有
機正孔注入輸送層上に有機発光層を形成する場合、また
は有機発光層上に有機電子注入輸送層を形成する場合に
おいて、従来の3次元的に架橋していない低分子からな
る有機材料層が下地になる場合には、その上に塗布され
る層材料の溶液に使われている有機溶剤により溶かされ
てしまう場合が多かった。Further, when the organic hole injecting and transporting layer is formed into a multi-layer by a coating method using an organic solvent such as a spin coating method, when the organic light emitting layer is formed on the organic hole injecting and transporting layer, or when the organic light emitting layer is formed. In the case of forming an organic electron injecting and transporting layer on the layer, when a conventional organic material layer composed of low-molecular compounds that are not three-dimensionally crosslinked serves as a base, a solution of the layer material applied thereon is used. It was often dissolved by the organic solvent used.
【0013】[0013]
【発明が解決しようとする課題】以上で述べたような従
来の低分子からなる有機薄膜EL材料は耐熱性が低い、
3次元架橋していないので有機溶剤に溶け出す。また、
耐熱性が高い低分子の有機正孔注入輸送材料としてはC
uPcやキナクリドン等が知られているが、透光性が低
く結晶性であるといった問題があった。The conventional organic thin film EL material composed of small molecules as described above has low heat resistance,
Since it is not three-dimensionally crosslinked, it dissolves in organic solvents. Also,
As a low molecular weight organic hole injecting and transporting material having high heat resistance, C
Although uPc, quinacridone and the like are known, there is a problem that they have low light transmission and are crystalline.
【0014】本発明では、以上の課題を解決した3次元
架橋可能な高い耐熱性と耐溶剤性を備えた層を有する有
機薄膜EL素子を抵供することを目的としてなされたも
のである。The present invention has been made for the purpose of providing an organic thin film EL element having a three-dimensionally crosslinkable layer having high heat resistance and solvent resistance, which solves the above problems.
【0015】[0015]
【課題を解決するための手段】本発明は上記の課題に鑑
みてなされたものであって、少なくとも有機発光層を含
む1層以上の有機薄膜層が介在して構成される有機薄膜
EL素子において、電極間の少なくとも1層以上の有機
薄膜層、具体的には有機正孔注入輸送層、または有機発
光層、有機電子注入輸送層のどれか1つ以上が、エポキ
シ基を有し、かつ正孔注入輸送、または発光、または電
子注入輸送機能を有する化合物を含む組成物を重合およ
び架橋した層よりなることを特徴とする有機薄膜EL素
子である。SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned problems, and is an organic thin film EL device constituted by interposing at least one organic thin film layer including at least an organic light emitting layer. , At least one organic thin film layer between the electrodes, specifically, an organic hole injecting and transporting layer, or any one or more of an organic light emitting layer and an organic electron injecting and transporting layer has an epoxy group, and is positive. An organic thin film EL device comprising a layer obtained by polymerizing and cross-linking a composition containing a compound having a hole injecting / transporting property, a light emitting property, or an electron injecting / transporting function.
【0016】以下に本発明の有機薄膜EL素子を模式的
に示す図1から図3までに基いて説明する。図1は、本
発明における有機薄膜EL素子を、基板(1)上に陽極
(2)、有機正孔注入輸送層(3)、有機発光層
(4)、陰極(5)、封止層(7)の順に構成し、ガラ
ス板(8)を接着性樹脂(9)にて接着して密封した場
合の例であり、本発明におけるエポキシ基を有する化合
物を含む組成物を重合および架橋した層は、有機正孔注
入輸送層(3)または有機発光層(4)のどちらか、ま
たは両方に用いることができる。また、有機正孔注入輸
送層材料と有機発光層材料を混合するか、陽極から十分
に正孔注入可能な有機発光層材料を用いれば、有機薄膜
層を1層のみとすることも可能である。The organic thin film EL device of the present invention will be described below with reference to FIGS. 1 to 3. FIG. 1 shows an organic thin film EL device according to the present invention, in which an anode (2), an organic hole injecting and transporting layer (3), an organic light emitting layer (4), a cathode (5), a sealing layer ( This is an example in which the glass plate (8) is formed in the order of 7) and is adhered and sealed with an adhesive resin (9), and is a layer obtained by polymerizing and crosslinking a composition containing a compound having an epoxy group in the present invention. Can be used in either the organic hole injecting and transporting layer (3) or the organic light emitting layer (4), or both. Further, if the organic hole injecting and transporting layer material and the organic light emitting layer material are mixed or an organic light emitting layer material capable of sufficiently injecting holes from the anode is used, it is possible to have only one organic thin film layer. .
【0017】図3で示される素子は、陽極からの正孔注
入効率を高めるため、または発光層との界面において励
起電子のとじ込め効率を上げるために正孔注入輸送層を
第1正孔注入輸送層(10)と第2正孔注入輸送層(1
1)との2層から構成されている場合の例である。In the device shown in FIG. 3, in order to enhance the efficiency of hole injection from the anode or to enhance the efficiency of confining excited electrons at the interface with the light emitting layer, the hole injection transport layer is used as the first hole injection layer. The transport layer (10) and the second hole injection transport layer (1
This is an example in the case of being composed of two layers of 1).
【0018】本発明におけるエポキシ基を有する化合物
を含む組成物を重合および架橋した層は、第1、または
第2正孔注入輸送層のどちらか、または両方の層に用い
ることもできる。さらに正孔注入輸送層は3層以上にす
ることも可能である。さらに、図2に示すように有機発
光層(4)と陰極(5)間に有機発光層との界面で正孔
の流れを阻止する電子注入輸送層(6)を設け、基板
(1)上に陽極(2)、有機正孔注入輸送層(3)、有
機発光層(4)、有機電子注入輸送層(6)、陰極
(5)、封止層(7)の順に構成することもできるし、
同様の構成を基板上に陰極から逆の順に構成してもよ
い。The layer obtained by polymerizing and crosslinking the composition containing the compound having an epoxy group in the present invention can be used as either the first or second hole injecting and transporting layer, or both layers. Further, the hole injecting and transporting layer can be composed of three or more layers. Further, as shown in FIG. 2, an electron injecting and transporting layer (6) that blocks the flow of holes at the interface between the organic light emitting layer (4) and the cathode (5) is provided on the substrate (1). In addition, an anode (2), an organic hole injecting and transporting layer (3), an organic light emitting layer (4), an organic electron injecting and transporting layer (6), a cathode (5), and a sealing layer (7) may be formed in this order. Then
The same structure may be formed on the substrate in the reverse order from the cathode.
【0019】以下、さらに詳しく材料および素子の製造
方法について説明する。陽極(2)は、ガラスやプラス
チックフィルム等の透明絶縁性の基板(1)上にITO
(仕事関数4.6〜4.8eV)や酸化亜鉛アルミニウ
ムのような透明導電性物質を真空蒸着やスパッタリング
法等で被覆した表面抵抗10〜50Ω/□、可視光線透
過率80%以上の透明電極、又は金やプラチナを薄く蒸
着した半透明電極やポリアニリン、ポリピロール、ポリ
チオフェン等の高分子を被覆した半透明電極が望まし
い。The materials and the method of manufacturing the device will be described in more detail below. The anode (2) is ITO on a transparent insulating substrate (1) such as glass or plastic film.
(Work function 4.6 to 4.8 eV) or a transparent electrode having a surface resistance of 10 to 50 Ω / □ and a visible light transmittance of 80% or more coated with a transparent conductive material such as zinc aluminum oxide by vacuum deposition or sputtering. Alternatively, a semitransparent electrode in which gold or platinum is thinly vapor-deposited or a semitransparent electrode coated with a polymer such as polyaniline, polypyrrole, or polythiophene is preferable.
【0020】しかし、別の場合には、陽極(2)は不透
明で、正孔注入輸送層(3)を通して有機発光層(4)
へ正孔注入しやすい仕事関数の値の大きい金、プラチ
ナ、パラジウム、ニッケル等の金属板、シリコン、ガリ
ウムリン、アモルファス炭化シリコン等の仕事関数が
4.6eV以上の半導体基板、もしくはそれらの金属や
半導体を、絶縁性の基板(1)上に被覆した陽極(2)
を用い、陰極(5)を透明電極もしくは半透明電極とす
ることもできる。陰極(5)も不透明であれば、有機発
光層(4)の少なくとも一端が透明である必要がある。In another case, however, the anode (2) is opaque and the organic light-emitting layer (4) passes through the hole injecting and transporting layer (3).
A metal plate such as gold, platinum, palladium, nickel, or the like having a large work function value for easily injecting holes into a semiconductor substrate, a semiconductor substrate such as silicon, gallium phosphide, or amorphous silicon carbide having a work function of 4.6 eV or more, or a metal thereof. Anode (2) in which a semiconductor is coated on an insulating substrate (1)
Alternatively, the cathode (5) can be a transparent electrode or a semitransparent electrode. If the cathode (5) is also opaque, at least one end of the organic light emitting layer (4) needs to be transparent.
【0021】次に本発明におけるエポキシ基を有する化
合物を含む組成物を重合および架橋した層を有機正孔注
入輸送層(3)として用いる場合の例を上げる。エポキ
シ基を有する化合物の例としては一般式(化3)〜(化
8)、および(化11)で示される1分子中に1つ〜8
つ程度エポキシ基を有する化合物があげられるが、特に
本発明を限定するものではない。Next, an example of using a layer obtained by polymerizing and crosslinking a composition containing a compound having an epoxy group in the present invention as the organic hole injecting and transporting layer (3) will be given. Examples of the compound having an epoxy group include 1 to 8 in one molecule represented by the general formulas (Chemical formula 3) to (Chemical formula 8) and (Chemical formula 11).
Examples thereof include compounds having an epoxy group, but the present invention is not limited thereto.
【0022】[0022]
【化3】 [Chemical 3]
【0023】(G1 〜G2 は、それぞれ以下に示す基か
ら独立に選ばれ、この中のR1 は水素、メチル基、トリ
フルオロメチル基、水酸基、メトキシ基、フッ素から選
ばれ、R2 は結合を表す連絡基、または炭素数1〜4の
メチレン鎖を表す。nは、1〜3の整数、mは置換基の
数を表す正の整数。)(G 1 and G 2 are independently selected from the following groups, and R 1 in these is selected from hydrogen, methyl group, trifluoromethyl group, hydroxyl group, methoxy group and fluorine, and R 2 Represents a linking group representing a bond or a methylene chain having 1 to 4 carbon atoms, n is an integer of 1 to 3, and m is a positive integer representing the number of substituents.)
【0024】[0024]
【化4】 [Chemical 4]
【0025】[0025]
【化5】 [Chemical 5]
【0026】[0026]
【化6】 [Chemical 6]
【0027】G1 〜G2 :n,mは(化3)と同様G 1 to G 2 : n and m are the same as in (formula 3)
【0028】[0028]
【化7】 [Chemical 7]
【0029】G2 ,n,mは(化3)と同様G 2 , n, and m are the same as in (formula 3)
【0030】[0030]
【化8】 [Chemical 8]
【0031】G1 ,G2 ,n,mは(化3)と同様G 1 , G 2 , n, and m are the same as in (formula 3).
【0032】[0032]
【化9】 [Chemical 9]
【0033】G2 ,n,mは(化3)と同様G 2 , n and m are the same as in (formula 3)
【0034】(化3)で示される化合物は、水酸化ナト
リウム等の触媒と反応させることで(化10)で示され
る直鎖状のポリエーテルが得られ、これを適当な有機触
媒に溶かかして基板上に塗布することもできる。The compound represented by (Chemical Formula 3) is reacted with a catalyst such as sodium hydroxide to obtain the linear polyether represented by (Chemical Formula 10), which is dissolved in an appropriate organic catalyst. Can also be applied on the substrate.
【0035】[0035]
【化10】 [Chemical 10]
【0036】nは1〜3の整数 lは重合度を表わす整
数N is an integer of 1 to 3 l is an integer representing the degree of polymerization
【0037】また、(化11)で表せるような水酸基を
2つ持つ化合物とエピクロロヒドリンFurther, a compound having two hydroxyl groups represented by the chemical formula 11 and epichlorohydrin
【0038】[0038]
【化11】 [Chemical 11]
【0039】等の(化12)で表わされる化合物を水酸
化ナトリウム等の触媒の存在下1:1の仕込み比で反応
させることによって(化13)で表わされる縮合物が得
られる。The compound represented by (Chemical formula 12) is reacted with the compound represented by (Chemical formula 12) in the presence of a catalyst such as sodium hydroxide at a charging ratio of 1: 1 to obtain a condensate represented by (Chemical formula 13).
【0040】[0040]
【化12】 [Chemical 12]
【0041】nは1〜3の整数N is an integer of 1 to 3
【0042】[0042]
【化13】 [Chemical 13]
【0043】nは1〜3の整数 lは重合度を表す整数N is an integer of 1 to 3 l is an integer representing the degree of polymerization
【0044】(化6)〜(化9)および(化13)で表
わされる化合物および(化13)で表わされる化合物の
水酸基をさらにエピクロロヒドリン等と反応させた化合
物は新保正樹編「エポキシ樹脂ハンドブック」(198
7)(日刊工業新聞社)中で言及されているアミン系、
ポリアミノアミド系、酸および無水物系等の硬化剤から
選ばれた化合物と共に混合し、トルエン、テトラヒドロ
フラン、クロロホルム、ジオキサン、ジメチルアセトア
ミド、ジメチルホルムアミド、シクロヘキサン等の一般
の有機溶媒に溶かすことができ、基板上にスピンコート
法、ディップコート法、ロールコート法等の方法で塗布
後、適当な条件で熱処理することにより3次元的に架橋
した耐熱性が高く、溶剤不溶性の有機正孔注入輸送層が
得られる。Compounds represented by (Chemical Formula 6) to (Chemical Formula 9) and (Chemical Formula 13) and compounds obtained by further reacting the hydroxyl group of the compound represented by (Chemical Formula 13) with epichlorohydrin and the like are "Epoxy by Masaki Shinbo". Jushi Handbook "(198
7) Amine system mentioned in (Nikkan Kogyo Shimbun),
Polyaminoamide-based, can be mixed with a compound selected from hardeners such as acids and anhydrides and dissolved in common organic solvents such as toluene, tetrahydrofuran, chloroform, dioxane, dimethylacetamide, dimethylformamide, cyclohexane, etc. After coating by spin coating method, dip coating method, roll coating method or the like on the above, it is heat-treated under appropriate conditions to obtain a three-dimensionally crosslinked, highly heat-resistant, solvent-insoluble organic hole injecting and transporting layer. To be
【0045】硬化剤としては1,4ジアミノシクロヘキ
サンや、(化14)、(化15)で表わされる硬化剤も
用いることもできる。As the curing agent, 1,4 diaminocyclohexane and the curing agents represented by (Chemical formula 14) and (Chemical formula 15) can also be used.
【0046】[0046]
【化14】 [Chemical 14]
【0047】G1 ,G2 は(化3)と同様G 1 and G 2 are the same as in (formula 3)
【0048】[0048]
【化15】 [Chemical 15]
【0049】G2 は(化3)と同様G 2 is the same as (Chemical Formula 3)
【0050】分子量を上げ、耐熱性を増すためには、組
成物中のエポキシ基とアミノ基の比を2:1にすること
が望ましい。(化3)、(化5)および(化11)はエ
ポキシ基がメチレン鎖を介して、エーテル結合により結
合しているが、エステル結合とすることも可能である。In order to increase the molecular weight and heat resistance, it is desirable that the ratio of epoxy groups to amino groups in the composition is 2: 1. In (Chemical Formula 3), (Chemical Formula 5) and (Chemical Formula 11), the epoxy group is bonded via an methylene chain by an ether bond, but an ester bond is also possible.
【0051】有機正孔注入輸送層は、本発明によるエポ
キシ基を有する化合物を含む組成物を重合および架橋し
た層を単層で用いることもできるが、仕事関数等の異な
る他のエポキシ基を有する化合物を含む組成物を重合お
よび架橋した層と図3 で示すように、積層したり、特願
平4−72009号、特願平4−300885号中で言
及されている(化16)等で示されるポリフォスファゼ
ンポリマーや、特願平4−72009号、特願平4−1
42791号、特願平5−126717号中で言及され
ているポリマーや低分子の正孔輸送材料と積層したり、
混合して正孔注入輸送層とすることもできる。For the organic hole injecting and transporting layer, a layer obtained by polymerizing and cross-linking the composition containing the compound having an epoxy group according to the present invention can be used as a single layer, but has another epoxy group having a different work function or the like. As shown in FIG. 3, a layer obtained by polymerizing and cross-linking a composition containing a compound may be laminated, or referred to in Japanese Patent Application Nos. 4-72009 and 4-300888 (Formula 16). The indicated polyphosphazene polymer, Japanese Patent Application Nos. 4-72009 and 4-1.
No. 42791 and Japanese Patent Application No. 5-126717, laminated with a polymer or a low molecular weight hole transport material,
It is also possible to mix them to form a hole injecting and transporting layer.
【0052】[0052]
【化16】 [Chemical 16]
【0053】ここでXの59%以上は以下の基から選ば
れた基により置換されている。Here, 59% or more of X is substituted with a group selected from the following groups.
【0054】[0054]
【化17】 [Chemical 17]
【0055】[0055]
【化18】 [Chemical 18]
【0056】[0056]
【化19】 [Chemical 19]
【0057】正孔注入輸送層の厚さは単層または積層で
形成する場合において、5〜100nmの厚さが望まし
い。The thickness of the hole injecting and transporting layer is preferably 5 to 100 nm when formed as a single layer or a laminated layer.
【0058】また、化合物によっては正孔注入輸送層が
発光層の機能も有し、単層の有機薄膜層でEL素子を形
成することができる場合もある。In some cases, the hole injecting and transporting layer also has a function as a light emitting layer depending on the compound, and the EL device can be formed by a single organic thin film layer.
【0059】次に、正孔注入輸送層(3)上に有機発光
層(4)を形成する。本発明における例としては、(化
20)で示されるエポキシ化合物Next, the organic light emitting layer (4) is formed on the hole injecting and transporting layer (3). As an example in the present invention, an epoxy compound represented by
【0060】[0060]
【化20】 [Chemical 20]
【0061】(nは1〜3の整数、l,mは0〜3の整
数でl+mは中心金属Mの価数)(N is an integer of 1 to 3, l and m are integers of 0 to 3 and 1 + m is a valence of the central metal M)
【0062】を含む組成物を成膜後、適当な硬化剤と伴
に重合、架橋させることで有機発光層として用いること
ができるが、特にこの例に限定されるものではなく特願
平5−126717号、特願平4−300885号で言
及されている有機発光層用材料の蛍光物質の中から選ん
で用いることができる。It is possible to use it as an organic light emitting layer by polymerizing and cross-linking a composition containing the above with a suitable curing agent after forming a film, but it is not particularly limited to this example, and it is not limited to this application. It can be selected and used from the fluorescent substances of the materials for the organic light emitting layer which are referred to in Japanese Patent Application No. 126717 and Japanese Patent Application No. 4-300885.
【0063】これらの有機発光層材料の成膜方法は真空
蒸着法、累積膜法、または適当な溶媒に溶かして塗布し
たり、樹脂バインダー中に分散させてスピンコートなど
の方法でコーティングすることにより行われる。These organic light emitting layer materials can be formed by vacuum vapor deposition method, cumulative film method, coating by dissolving in a suitable solvent, or dispersing in a resin binder and coating by spin coating or the like. Done.
【0064】有機発光層(4)の膜厚は、単層または積
層により形成する場合においても1μm以下であり、好
ましくは1〜100nmである。また、これらの蛍光性
ポリマーや分子にグリシジル基、イソシアナート基、ビ
ニル基、アクリル基、メタクリロイルオキシメチル基、
メタクリロイルオキシ基、メタクリロイルオキシエチル
基、アクリロイル基、アクリロイルオキシメチル基、ア
クリロイルオキシエチル基、シンナモイル基、スチレン
メチルオキシ基、プロピオロイル基、プロパルギル基等
の重合性、架橋性の基を導入した材料を用いて成膜後に
熱、光、放射線で重合、架橋することもできる。The film thickness of the organic light emitting layer (4) is 1 μm or less, and preferably 1 to 100 nm even when it is formed by a single layer or a laminated layer. In addition, these fluorescent polymers and molecules include glycidyl group, isocyanate group, vinyl group, acryl group, methacryloyloxymethyl group,
Using materials introduced with polymerizable or crosslinkable groups such as methacryloyloxy group, methacryloyloxyethyl group, acryloyl group, acryloyloxymethyl group, acryloyloxyethyl group, cinnamoyl group, styrenemethyloxy group, propioloyl group, propargyl group It is also possible to polymerize and crosslink with heat, light or radiation after the film formation.
【0065】また、有機発光層(4)中の蛍光体は、発
光波長変換、発光効率向上のために、米国ラムダフィズ
ィック社またはイーストマンコダック社のレーザーダイ
カタログに記載されているクマリン系やキナクリドン
系、ペリレン系、ピラン系等の、2種類以上の蛍光体を
ドーピングするか、多種類の蛍光体の発光層を2層以上
積層してもよく、そのうちの一方は赤外域または紫外域
に蛍光を示すものであってもよい。The phosphor in the organic light-emitting layer (4) is a coumarin-based material described in the laser die catalog of Lambda Fizzic Co., Ltd. or Eastman Kodak Co., Ltd. in order to convert emission wavelength and improve luminous efficiency. You may dope two or more kinds of phosphors such as quinacridone type, perylene type, pyran type, etc., or stack two or more light emitting layers of various kinds of phosphors, one of which is in the infrared region or the ultraviolet region. It may exhibit fluorescence.
【0066】次に有機発光層(4)上に有機電子注入輸
送層(6)を積層する場合、有機電子注入輸送材料の好
ましい条件は、電子移動度が大きく、LUMO(最低空
被占軌導)のエネルギーレベルが有機発光層材料のLU
MOのエネルギーレベルと同程度から陰極材料のフェル
ミレベル(仕事関数)の間にあり、仕事関数が有機発光
層材料より大きく、成膜性が良いことがある。さらに陽
極(2)が不透明で、透明もしくは半透明の陰極(5)
から光を取り出す構成の素子においては少なくとも有機
発光層材料の蛍光波長領域において実質的に透明である
必要がある。Next, when the organic electron injecting and transporting layer (6) is laminated on the organic light emitting layer (4), preferable conditions for the organic electron injecting and transporting material are that the electron mobility is high and the LUMO (lowest unoccupied occupied guiding) ) Has an energy level of LU of the organic light emitting layer material
It is in the same range as the energy level of MO and between the Fermi level (work function) of the cathode material, the work function is larger than that of the organic light emitting layer material, and film formability may be good. Furthermore, the anode (2) is opaque and is a transparent or semi-transparent cathode (5).
In the element configured to extract light from the organic light emitting layer material, it is necessary that the element is substantially transparent in at least the fluorescence wavelength region.
【0067】本発明における電子注入輸送層は、特願平
4−300885の中で言及されている材料を用いるこ
とができるが、場合によっては有機発光層材料の例にあ
げた化合物を用いることが可能である。For the electron injecting and transporting layer in the present invention, the materials mentioned in Japanese Patent Application No. 4-300885 can be used, but in some cases, the compounds mentioned as examples of the organic light emitting layer material can be used. It is possible.
【0068】有機電子注入輸送層(6)の成膜方法は、
スピンコート法等の方法で塗布、または真空蒸着法、累
積膜法等の方法により行なわれ、1〜100nmの厚さ
に成膜される。The method for forming the organic electron injecting and transporting layer (6) is as follows.
It is applied by a method such as a spin coat method or a method such as a vacuum vapor deposition method or a cumulative film method to form a film having a thickness of 1 to 100 nm.
【0069】次に陰極(5)を有機発光層(4)または
有機電子注入輸送層(6)上に形成する。Next, the cathode (5) is formed on the organic light emitting layer (4) or the organic electron injecting and transporting layer (6).
【0070】陰極は、電子注入を効果的に行なうために
有機発光層(4)または電子注入輸送層(6)と接する
面に低仕事関数の物質が使われ、Li、Na、Mg、L
a、Ce、Ca、Sr、Al、Ag、In、Sn、Z
n、Zr等の金属元素単体、または安定性を向上させる
ためにそれらを含む2成分、3成分の合金系が用いられ
る。For the cathode, a material having a low work function is used on the surface in contact with the organic light emitting layer (4) or the electron injecting and transporting layer (6) in order to effectively inject electrons, and Li, Na, Mg, L are used.
a, Ce, Ca, Sr, Al, Ag, In, Sn, Z
A single metal element such as n or Zr, or a binary or ternary alloy system containing them for improving stability is used.
【0071】特に、LiやCaを添加したAlは仕事関
数は3.1eV程度に低下し、発光層に電子を注入しや
すくなるとともに、Mg系の合金よりも安定であるため
に陰極として優れている。In particular, Al added with Li or Ca has a work function lowered to about 3.1 eV, makes it easy to inject electrons into the light emitting layer, and is more stable than a Mg-based alloy, and is therefore excellent as a cathode. There is.
【0072】LiやCaを含む低仕事関数陰極を用いた
場合には、さらにその上にLiやCaを含まない、A
l、In、Ag等の金属層を積層し、酸化に対する保護
層としてもよい。When a low work function cathode containing Li or Ca is used, Li or Ca is not contained on the cathode.
A metal layer of 1, 1, In, Ag or the like may be laminated to serve as a protective layer against oxidation.
【0073】陰極(5)の形成方法は、抵抗加熱方法に
より10-5Torrオーダー以下の真空度の下で成分ご
とに別々の蒸着源から水晶振動子式膜厚計でモニターし
ながら共蒸着する。この時、0.01〜0.3μm程度
の膜厚で形成されるが、電子ビーム蒸着法、イオンプレ
ーティング法や、スパッタリング法により共蒸着ではな
く、合金ターゲットを用いて成膜することもできる。The cathode (5) is formed by co-evaporation by a resistance heating method under a vacuum degree of 10 -5 Torr order or less, while monitoring the film thickness gauge from a crystal oscillator from different vapor deposition sources for each component. . At this time, the film is formed with a film thickness of about 0.01 to 0.3 μm, but it is also possible to use an alloy target instead of co-deposition by the electron beam evaporation method, the ion plating method, or the sputtering method. .
【0074】次に素子の有機層や電極の酸化を防ぐため
に素子上に封止層(7)を形成する。封止層(7)は、
陰極(5)の形成後直ちに形成する。封止層材料の例と
しては、SiO2 、SiO、GeO、MgO、Al2 O
3 、TiO2 、GeO2 、ZnO、TeO2 、Sb2 O
3 、SnO、B2 O3 等の酸化物、MgF2 、LiF、
BaF2 、AlF3 、FeF3 、CaF2 等の沸化物Z
nS、GeS、SnS等の硫化物等のガスおよび水蒸気
バリアー性の高い無機化合物があげられるが、上記例に
限定されるものではない。これらを単体または複合して
単層、または積層して蒸着、スパッタリング法、イオン
プレーティング法等により成膜する。抵抗加熱方式で蒸
着する場合には、低温で蒸着できるGeOが優れてい
る。また金属参加ぶる層はそれらを校正する金属を酸素
プラズマを通して蒸着することにより容易に形成するこ
ともできる。陰極保護のために、封止層中、または封止
層に接する面上に封止用無機化合物とLi等のアルカリ
金属やCa等のアルカリ土類金属との混合層を設けても
よい。封止膜の密着性や緻密性を上げるために、イオン
プレーティング等のプラズマプロセスを用いることが望
ましい。Next, a sealing layer (7) is formed on the device in order to prevent oxidation of the organic layers and electrodes of the device. The sealing layer (7) is
It is formed immediately after the formation of the cathode (5). Examples of the sealing layer material include SiO 2 , SiO, GeO, MgO, and Al 2 O.
3 , TiO 2 , GeO 2 , ZnO, TeO 2 , Sb 2 O
3 , oxides such as SnO and B 2 O 3 , MgF 2 , LiF,
Fluoride Z such as BaF 2 , AlF 3 , FeF 3 , CaF 2
Examples thereof include sulfides and other gases such as nS, GeS, and SnS, and inorganic compounds having a high water vapor barrier property, but are not limited to the above examples. These are used alone or in combination to form a single layer, or laminated to form a film by vapor deposition, a sputtering method, an ion plating method, or the like. In the case of vapor deposition by the resistance heating method, GeO, which can be vapor-deposited at low temperature, is excellent. Also, the metal-particulating layers can be easily formed by depositing the metals that calibrate them through oxygen plasma. In order to protect the cathode, a mixed layer of a sealing inorganic compound and an alkali metal such as Li or an alkaline earth metal such as Ca may be provided in the sealing layer or on the surface in contact with the sealing layer. It is desirable to use a plasma process such as ion plating in order to improve the adhesion and the denseness of the sealing film.
【0075】さらに湿気の侵入を防ぐ為に市販の低吸湿
性の光硬化性接着剤、エポキシ系接着剤、シリコーン系
接着剤、架橋エチレン−酢酸ビニル共重合体接着剤シー
ト等の接着性樹脂や低融点ガラスを用いて、ガラス板等
の封止板(8)の周囲または全面を接着し密封する。ガ
ラス板以外にも金属板、プラスチック板等を用いること
もできる。Further, in order to prevent invasion of moisture, an adhesive resin such as a commercially available low hygroscopic photocurable adhesive, epoxy adhesive, silicone adhesive, crosslinked ethylene-vinyl acetate copolymer adhesive sheet, or the like, A low melting point glass is used to adhere and seal the periphery or the whole surface of the sealing plate (8) such as a glass plate. Besides the glass plate, a metal plate, a plastic plate or the like can be used.
【0076】[0076]
【作用】以上のように構成した有機薄膜EL素子は、有
機正孔注入輸送層(3)側を正として電源(12)にリ
ード線(13)で接続し、直流電圧を印加することによ
り発光するが、交流電圧を印加した場合にも正孔注入輸
送層(3)側の電極が正に電圧印加されている間は発光
する。In the organic thin film EL device constructed as described above, the organic hole injecting and transporting layer (3) is positively connected to the power source (12) by the lead wire (13) and light is emitted by applying a DC voltage. However, even when an AC voltage is applied, light is emitted while the electrode on the hole injecting and transporting layer (3) side is positively applied.
【0077】本発明による有機薄膜EL素子を基板上に
2次元に配列することにより文字や画像を表示可能な薄
型ディスプレーを作ることができる。By arranging the organic thin film EL device according to the present invention two-dimensionally on the substrate, a thin display capable of displaying characters and images can be produced.
【0078】[0078]
<実施例1>透明絶縁性の基板(1)として厚さ1.1
mmの青板ガラス板を用い、この上に120nmのIT
Oを被覆して陽極(2)とした。この透明導電性基板を
使用前に水洗、プラズマ洗浄により十分に洗浄後、(化
17)で示されるジエポキシ化合物(重クロロホルム中
で測定した1 H−NMRスペクトル、および13C−NM
Rスペクトルをそれぞれ図4、図5に示す)と特願平4
−142791号で合成法を述べた(化21)(化2
2)で示すジアミン硬化剤<Example 1> The thickness of the transparent insulating substrate (1) was 1.1.
mm glass plate, 120nm IT on it
O was coated to form an anode (2). This transparent conductive substrate was thoroughly washed with water and plasma before use, and then the diepoxy compound represented by the formula ( 1 ) ( 1 H-NMR spectrum measured in deuterated chloroform, and 13 C-NM
R spectra are shown in FIGS. 4 and 5, respectively, and Japanese Patent Application No.
No. 142791 describes the synthesis method (Chemical formula 21) (Chemical formula 2)
Diamine curing agent shown in 2)
【0079】[0079]
【化21】 [Chemical 21]
【0080】[0080]
【化22】 [Chemical formula 22]
【0081】をモル比2:1で混合したテトラヒドロフ
ラン溶液をスピンコーティングをした後、200℃まで
加熱し3次元硬化させ厚さ50nmの正孔注入輸送層
(3)を成膜した。この正孔注入輸送層はテトラヒドロ
フランに不溶であり、強固な基板密着性を示した。次
に、Alq3 のクロロホルム溶液をその上面にスピンコ
ーティングをして50nmの厚さの有機発光層(4)を
形成した。Tetrahydrofuran solution in which the molar ratio of 2: 1 was mixed was spin-coated, then heated to 200 ° C. and three-dimensionally cured to form a hole injection transport layer (3) having a thickness of 50 nm. This hole injecting and transporting layer was insoluble in tetrahydrofuran and showed strong substrate adhesion. Then, a chloroform solution of Alq 3 was spin-coated on the upper surface thereof to form an organic light emitting layer (4) having a thickness of 50 nm.
【0082】次に、その上面に陰極(5)としてAlと
Liを蒸着速度比3:1で20nm形成した後、Alの
みさらに2000Å積層した。最後に、封止層(7)と
してLiFを400nm蒸着した後に、GeO2 を酸素
プラズマ中でGeOを蒸着することにより600nmの
厚さで形成後、ガラス板(8)を光硬化性樹脂(9)で
接着し密封した。Next, Al and Li were formed as a cathode (5) on the upper surface thereof at a vapor deposition rate ratio of 3: 1 to a thickness of 20 nm, and then only Al was further stacked by 2000 Å. Finally, LiF was vapor-deposited to a thickness of 400 nm as a sealing layer (7), and then GeO 2 was vapor-deposited in an oxygen plasma to form a film having a thickness of 600 nm. Then, the glass plate (8) was coated with a photocurable resin (9). ) And then sealed.
【0083】この素子は20Vの直流電圧印加により2
3cd/m2 の黄緑色発光を示した。電流密度は32m
A/cm2 であった。This device is applied with a DC voltage of 20 V
It exhibited a yellow-green emission of 3 cd / m 2 . Current density is 32m
It was A / cm 2 .
【0084】<実施例2>実施例1と同様に正孔注入輸
送層を形成し第1正孔注入輸送層(10)とした。次に
第2正孔注入輸送層(11)としてTPDを7nm蒸着
した。次に有機発光層(4)としてAlq3 を50nm
蒸着し、以後実施例1と同様に素子を作製した。Example 2 A hole injecting and transporting layer was formed in the same manner as in Example 1 to obtain a first hole injecting and transporting layer (10). Next, TPD was vapor-deposited with a thickness of 7 nm as a second hole injecting and transporting layer (11). Next, as the organic light emitting layer (4), Alq 3 is 50 nm.
After vapor deposition, a device was prepared in the same manner as in Example 1.
【0085】この素子は20Vの直流電圧印加により4
825cd/m2 の黄緑色発光を示した。電流密度は3
54mA/cm2 であった。This element is applied with a DC voltage of 20 V
A yellow-green light emission of 825 cd / m 2 was exhibited. Current density is 3
It was 54 mA / cm 2 .
【0086】<実施例3>実施例2の素子の第2正孔注
入輸送層を除いた以外は同様に素子を作製した。この素
子は19Vの直流電圧を印加すると1127cd/m2
の黄緑色の発光を示した。電流密度は273mA/cm
2 であった。Example 3 A device was prepared in the same manner as in the device of Example 2 except that the second hole injecting and transporting layer was omitted. This element is 1127 cd / m 2 when a DC voltage of 19 V is applied.
Yellowish green luminescence was exhibited. Current density is 273mA / cm
Was 2 .
【0087】[0087]
【発明の効果】本発明におけるエポキシ基を有し、かつ
正孔注入輸送、または発光、または電子注入輸送機能を
有する化合物を含む組成物を重合および架橋した層を有
機薄膜EL素子の有機層に用いることにより、機械的強
度、および耐熱性が高く有機溶剤に不溶な有機層を得る
ことができ、本発明の有機層上にスピンコート法等の溶
剤を用いた塗布法により他の膜を形成しても溶かされ混
合してしまうことがない。EFFECT OF THE INVENTION A layer obtained by polymerizing and cross-linking a composition containing a compound having an epoxy group and having a hole injecting / transporting, emitting, or electron injecting / transporting function in the present invention is used as an organic layer of an organic thin film EL device. By using it, an organic layer having high mechanical strength and high heat resistance and insoluble in an organic solvent can be obtained, and another film is formed on the organic layer of the present invention by a coating method using a solvent such as a spin coating method. Even if it is melted, it will not be mixed.
【0088】[0088]
【図1】本発明の有機薄膜EL素子の一実施例を示す説
明図である。FIG. 1 is an explanatory diagram showing an example of an organic thin film EL element of the present invention.
【図2】本発明の有機薄膜EL素子の他の実施例を示す
説明図である。FIG. 2 is an explanatory view showing another embodiment of the organic thin film EL element of the present invention.
【図3】本発明の有機薄膜EL素子の他の実施例を示す
説明図である。FIG. 3 is an explanatory view showing another embodiment of the organic thin film EL element of the present invention.
【図4】本実施例中で示されるジポキシ化合物を重クロ
ロホルム中で測定した1 H−NMRスペクトルである。FIG. 4 is a 1 H-NMR spectrum obtained by measuring the dipoxy compound shown in this example in deuterated chloroform.
【図5】本実施例中で示されるジポキシ化合物を重クロ
ロホルム中で測定した13C−NMRスペクトルである。FIG. 5 is a 13 C-NMR spectrum obtained by measuring the dipoxy compound shown in this example in deuterated chloroform.
(1)…基板 (2)…陽極 (3)…正孔注入輸送層 (4)…有機発光層 (5)…陰極 (6)…有機電子注入輸送層 (7)…封止層 (8)…ガラス板 (9)…接着性樹脂層 (10)…第1正孔注入輸送層 (11)…第2正孔注入輸送層 (12)…電源 (13)…リード線 (14)…陰極取り出し口 (1) ... Substrate (2) ... Anode (3) ... Hole injecting and transporting layer (4) ... Organic light emitting layer (5) ... Cathode (6) ... Organic electron injecting and transporting layer (7) ... Sealing layer (8) ... Glass plate (9) ... Adhesive resin layer (10) ... First hole injection transport layer (11) ... Second hole injection transport layer (12) ... Power supply (13) ... Lead wire (14) ... Cathode extraction mouth
─────────────────────────────────────────────────────
─────────────────────────────────────────────────── ───
【手続補正書】[Procedure amendment]
【提出日】平成6年11月4日[Submission date] November 4, 1994
【手続補正1】[Procedure Amendment 1]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】0035[Correction target item name] 0035
【補正方法】変更[Correction method] Change
【補正内容】[Correction content]
【0035】[0035]
【化10】 [Chemical 10]
Claims (11)
発光層を含む1層以上の有機薄膜層が介在して構成され
る有機薄膜EL素子において、該電極間に挟まれた少な
くとも1層以上の有機薄膜層が、エポキシ基を有する化
合物を含む組成物を重合および架橋した層よりなること
を特徴とする有機薄膜EL素子。1. An organic thin-film EL device comprising at least one organic thin-film layer including at least an organic light-emitting layer interposed between electrodes facing each other, and at least one layer sandwiched between the electrodes. An organic thin film EL device, characterized in that the organic thin film layer comprises a layer obtained by polymerizing and crosslinking a composition containing a compound having an epoxy group.
層が、単層または、多層の有機正孔注入輸送層と有機発
光層とからなる請求項1記載の有機薄膜EL素子におい
て、該正孔注入輸送層中の少なくとも1層以上の有機薄
膜層がエポキシ基を有する化合物を含む組成物を重合お
よび架橋した層よりなることを特徴とする有機薄膜EL
素子。2. The organic thin film EL device according to claim 1, wherein the organic thin film layer sandwiched between the electrodes facing each other comprises a single layer or a multilayer organic hole injecting and transporting layer and an organic light emitting layer. At least one organic thin film layer in the hole injecting and transporting layer comprises a layer obtained by polymerizing and cross-linking a composition containing a compound having an epoxy group.
element.
層が、少なくとも1層以上の有機正孔注入輸送層と有機
発光層とからなる請求項1記載の有機薄膜EL素子にお
いて、該正孔注入輸送層中の少なくとも1層以上の有機
薄膜層が、2つ以上のエポキシ基を有する化合物と2つ
以上のアミノ基を有する化合物を少なくとも含む組成物
を重合および架橋した層よりなることを特徴とする有機
薄膜EL素子。3. The organic thin film EL element according to claim 1, wherein the organic thin film layer sandwiched between the electrodes facing each other comprises at least one organic hole injecting and transporting layer and an organic light emitting layer. At least one organic thin film layer in the injecting and transporting layer is formed by polymerizing and crosslinking a composition containing at least a compound having two or more epoxy groups and a compound having two or more amino groups. And an organic thin film EL device.
て、2つ以上のエポキシ基を有する化合物と2つ以上の
アミノ基を有する化合物を少なくとも含む組成物を重合
および架橋した層が、該組成物を含む溶液を塗布後乾燥
し、さらに加熱することにより重合および架橋して形成
された層であることを特徴とする有機薄膜EL素子。4. The organic thin film EL device according to claim 3, wherein a layer obtained by polymerizing and crosslinking a composition containing at least a compound having two or more epoxy groups and a compound having two or more amino groups is the composition. An organic thin film EL element, which is a layer formed by polymerizing and crosslinking by applying a solution containing a substance, drying it, and then heating it.
て、該組成物中のエポキシ基とアミノ基のモル比が2対
1である組成物を用いて作製されたことを特徴とする有
機薄膜EL素子。5. The organic thin film EL device according to claim 3, wherein the organic thin film is prepared by using a composition having a molar ratio of epoxy groups to amino groups of 2 to 1 in the composition. EL element.
て、有機発光層が、少なくとも1種類以上の蛍光物質を
含む溶液を有機正孔注入輸送層上に塗布後乾燥すること
により形成された層であることを特徴とする有機薄膜E
L素子。6. The organic thin film EL device according to claim 2, wherein the organic light emitting layer is formed by applying a solution containing at least one or more kinds of fluorescent substances onto the organic hole injecting and transporting layer and then drying it. Organic thin film E characterized by
L element.
て、片側の電極が可視光線波長領域において50%以上
の光線透過率の透明電極、または半透明電極であり、対
向する他方の電極はリチウム、またはカルシウムを含む
金属合金電極であることを特徴とする有機薄膜EL素
子。7. The organic thin film EL element according to claim 1, wherein one electrode is a transparent electrode having a light transmittance of 50% or more in a visible light wavelength region, or a semitransparent electrode, and the other opposite electrode is lithium. Or an organic thin film EL element characterized by being a metal alloy electrode containing calcium.
チウム、またはカルシウムを含む金属電極上に、リチウ
ム、またはカルシウムを含まない難腐食性金属層を設け
たことを特徴とする有機薄膜EL素子。8. The organic thin film EL element according to claim 7, wherein a noncorrosive metal layer containing no lithium or calcium is provided on a metal electrode containing lithium or calcium. .
膜EL素子において、発光部において基板に接していな
い電極面側上に更に金属酸化物、金属フッ化物および金
属硫化物から選ばれる少なくとも一種以上の材料からな
る1層以上の無機封止層が設けられていることを特徴と
する有機薄膜EL素子。9. The organic thin film EL device according to claim 1, which is laminated on a substrate, and further selected from a metal oxide, a metal fluoride and a metal sulfide on the electrode surface side which is not in contact with the substrate in the light emitting part. An organic thin film EL element, characterized in that at least one inorganic sealing layer made of at least one kind of material is provided.
ラズマプロセス法により積層されたものであることを特
徴とする請求項7の有機薄膜EL素子。10. The organic thin film EL device according to claim 7, wherein at least one inorganic sealing layer is laminated by a plasma process method.
子において、無機封止層に接着性樹脂により気密性の板
または箔を接着したことを特徴とする有機薄膜EL素
子。11. The organic thin film EL element according to claim 9 or 10, wherein an airtight plate or foil is adhered to the inorganic sealing layer with an adhesive resin.
Priority Applications (1)
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---|---|---|---|
JP5231380A JP2848207B2 (en) | 1993-09-17 | 1993-09-17 | Organic thin film EL device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5231380A JP2848207B2 (en) | 1993-09-17 | 1993-09-17 | Organic thin film EL device |
Publications (2)
Publication Number | Publication Date |
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JPH0785973A true JPH0785973A (en) | 1995-03-31 |
JP2848207B2 JP2848207B2 (en) | 1999-01-20 |
Family
ID=16922716
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JP5231380A Expired - Fee Related JP2848207B2 (en) | 1993-09-17 | 1993-09-17 | Organic thin film EL device |
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JP (1) | JP2848207B2 (en) |
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