JPH05271652A - Organic thin-film el element - Google Patents
Organic thin-film el elementInfo
- Publication number
- JPH05271652A JPH05271652A JP4072009A JP7200992A JPH05271652A JP H05271652 A JPH05271652 A JP H05271652A JP 4072009 A JP4072009 A JP 4072009A JP 7200992 A JP7200992 A JP 7200992A JP H05271652 A JPH05271652 A JP H05271652A
- Authority
- JP
- Japan
- Prior art keywords
- organic
- layer
- hole injecting
- film
- transporting layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 24
- 150000001875 compounds Chemical class 0.000 claims abstract description 16
- 239000000463 material Substances 0.000 claims description 19
- 239000000126 substance Substances 0.000 claims description 9
- 230000005525 hole transport Effects 0.000 claims description 3
- 238000004132 cross linking Methods 0.000 abstract description 5
- 238000002347 injection Methods 0.000 abstract description 5
- 239000007924 injection Substances 0.000 abstract description 5
- 239000002904 solvent Substances 0.000 abstract description 5
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 abstract description 4
- YSERJCJSKGQGJW-UHFFFAOYSA-N 2-(n-[4-[4-(n-(2-hydroxyphenyl)anilino)phenyl]phenyl]anilino)phenol Chemical compound OC1=CC=CC=C1N(C=1C=CC(=CC=1)C=1C=CC(=CC=1)N(C=1C=CC=CC=1)C=1C(=CC=CC=1)O)C1=CC=CC=C1 YSERJCJSKGQGJW-UHFFFAOYSA-N 0.000 abstract description 2
- IWTYTFSSTWXZFU-UHFFFAOYSA-N 3-chloroprop-1-enylbenzene Chemical compound ClCC=CC1=CC=CC=C1 IWTYTFSSTWXZFU-UHFFFAOYSA-N 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 97
- 239000010408 film Substances 0.000 description 22
- 238000000034 method Methods 0.000 description 19
- -1 tris (8-quinolinol) aluminum Chemical compound 0.000 description 18
- 239000011521 glass Substances 0.000 description 11
- 239000000758 substrate Substances 0.000 description 11
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 9
- 238000007789 sealing Methods 0.000 description 8
- 238000007740 vapor deposition Methods 0.000 description 7
- 239000003960 organic solvent Substances 0.000 description 6
- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical compound [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 description 5
- 229910052709 silver Inorganic materials 0.000 description 5
- 238000004528 spin coating Methods 0.000 description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 4
- 229910052749 magnesium Inorganic materials 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 239000002356 single layer Substances 0.000 description 4
- OGGKVJMNFFSDEV-UHFFFAOYSA-N 3-methyl-n-[4-[4-(n-(3-methylphenyl)anilino)phenyl]phenyl]-n-phenylaniline Chemical compound CC1=CC=CC(N(C=2C=CC=CC=2)C=2C=CC(=CC=2)C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=C(C)C=CC=2)=C1 OGGKVJMNFFSDEV-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 description 3
- CSHWQDPOILHKBI-UHFFFAOYSA-N peryrene Natural products C1=CC(C2=CC=CC=3C2=C2C=CC=3)=C3C2=CC=CC3=C1 CSHWQDPOILHKBI-UHFFFAOYSA-N 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- ZOKIJILZFXPFTO-UHFFFAOYSA-N 4-methyl-n-[4-[1-[4-(4-methyl-n-(4-methylphenyl)anilino)phenyl]cyclohexyl]phenyl]-n-(4-methylphenyl)aniline Chemical compound C1=CC(C)=CC=C1N(C=1C=CC(=CC=1)C1(CCCCC1)C=1C=CC(=CC=1)N(C=1C=CC(C)=CC=1)C=1C=CC(C)=CC=1)C1=CC=C(C)C=C1 ZOKIJILZFXPFTO-UHFFFAOYSA-N 0.000 description 2
- KLZUFWVZNOTSEM-UHFFFAOYSA-K Aluminium flouride Chemical compound F[Al](F)F KLZUFWVZNOTSEM-UHFFFAOYSA-K 0.000 description 2
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical compound C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000004840 adhesive resin Substances 0.000 description 2
- 229920006223 adhesive resin Polymers 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 description 2
- HFACYLZERDEVSX-UHFFFAOYSA-N benzidine Chemical compound C1=CC(N)=CC=C1C1=CC=C(N)C=C1 HFACYLZERDEVSX-UHFFFAOYSA-N 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- VPUGDVKSAQVFFS-UHFFFAOYSA-N coronene Chemical compound C1=C(C2=C34)C=CC3=CC=C(C=C3)C4=C4C3=CC=C(C=C3)C4=C2C3=C1 VPUGDVKSAQVFFS-UHFFFAOYSA-N 0.000 description 2
- ZYGHJZDHTFUPRJ-UHFFFAOYSA-N coumarin Chemical compound C1=CC=C2OC(=O)C=CC2=C1 ZYGHJZDHTFUPRJ-UHFFFAOYSA-N 0.000 description 2
- 230000001186 cumulative effect Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000007733 ion plating Methods 0.000 description 2
- 238000004768 lowest unoccupied molecular orbital Methods 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- BBEAQIROQSPTKN-UHFFFAOYSA-N pyrene Chemical compound C1=CC=C2C=CC3=CC=CC4=CC=C1C2=C43 BBEAQIROQSPTKN-UHFFFAOYSA-N 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- YGLVWOUNCXBPJF-UHFFFAOYSA-N (2,3,4,5-tetraphenylcyclopenta-1,4-dien-1-yl)benzene Chemical compound C1=CC=CC=C1C1C(C=2C=CC=CC=2)=C(C=2C=CC=CC=2)C(C=2C=CC=CC=2)=C1C1=CC=CC=C1 YGLVWOUNCXBPJF-UHFFFAOYSA-N 0.000 description 1
- JCXLYAWYOTYWKM-UHFFFAOYSA-N (2,3,4-triphenylcyclopenta-1,3-dien-1-yl)benzene Chemical compound C1C(C=2C=CC=CC=2)=C(C=2C=CC=CC=2)C(C=2C=CC=CC=2)=C1C1=CC=CC=C1 JCXLYAWYOTYWKM-UHFFFAOYSA-N 0.000 description 1
- KLCLIOISYBHYDZ-UHFFFAOYSA-N 1,4,4-triphenylbuta-1,3-dienylbenzene Chemical compound C=1C=CC=CC=1C(C=1C=CC=CC=1)=CC=C(C=1C=CC=CC=1)C1=CC=CC=C1 KLCLIOISYBHYDZ-UHFFFAOYSA-N 0.000 description 1
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 description 1
- 125000001494 2-propynyl group Chemical group [H]C#CC([H])([H])* 0.000 description 1
- MGADZUXDNSDTHW-UHFFFAOYSA-N 2H-pyran Chemical compound C1OC=CC=C1 MGADZUXDNSDTHW-UHFFFAOYSA-N 0.000 description 1
- 125000004172 4-methoxyphenyl group Chemical group [H]C1=C([H])C(OC([H])([H])[H])=C([H])C([H])=C1* 0.000 description 1
- MVIXNQZIMMIGEL-UHFFFAOYSA-N 4-methyl-n-[4-[4-(4-methyl-n-(4-methylphenyl)anilino)phenyl]phenyl]-n-(4-methylphenyl)aniline Chemical compound C1=CC(C)=CC=C1N(C=1C=CC(=CC=1)C=1C=CC(=CC=1)N(C=1C=CC(C)=CC=1)C=1C=CC(C)=CC=1)C1=CC=C(C)C=C1 MVIXNQZIMMIGEL-UHFFFAOYSA-N 0.000 description 1
- ZHBOFZNNPZNWGB-UHFFFAOYSA-N 9,10-bis(phenylethynyl)anthracene Chemical compound C1=CC=CC=C1C#CC(C1=CC=CC=C11)=C(C=CC=C2)C2=C1C#CC1=CC=CC=C1 ZHBOFZNNPZNWGB-UHFFFAOYSA-N 0.000 description 1
- 229910016036 BaF 2 Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910005540 GaP Inorganic materials 0.000 description 1
- NRCMAYZCPIVABH-UHFFFAOYSA-N Quinacridone Chemical compound N1C2=CC=CC=C2C(=O)C2=C1C=C1C(=O)C3=CC=CC=C3NC1=C2 NRCMAYZCPIVABH-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000007983 Tris buffer Substances 0.000 description 1
- BEAHPPCNIBVQQD-SCICZZOKSA-N [Zn].C1([C@H](O)C[C@H](O)[C@H](O1)C)NC=1C=CC=C2C=CC=NC12.C1([C@H](O)C[C@H](O)[C@H](O1)C)NC=1C=CC=C2C=CC=NC12 Chemical compound [Zn].C1([C@H](O)C[C@H](O)[C@H](O1)C)NC=1C=CC=C2C=CC=NC12.C1([C@H](O)C[C@H](O)[C@H](O1)C)NC=1C=CC=C2C=CC=NC12 BEAHPPCNIBVQQD-SCICZZOKSA-N 0.000 description 1
- 125000003647 acryloyl group Chemical group O=C([*])C([H])=C([H])[H] 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 125000003545 alkoxy group Chemical group 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- JYMITAMFTJDTAE-UHFFFAOYSA-N aluminum zinc oxygen(2-) Chemical compound [O-2].[Al+3].[Zn+2] JYMITAMFTJDTAE-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910002056 binary alloy Inorganic materials 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 150000001721 carbon Chemical class 0.000 description 1
- 239000010406 cathode material Substances 0.000 description 1
- 125000001309 chloro group Chemical group Cl* 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000010549 co-Evaporation Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 229960000956 coumarin Drugs 0.000 description 1
- 235000001671 coumarin Nutrition 0.000 description 1
- VBVAVBCYMYWNOU-UHFFFAOYSA-N coumarin 6 Chemical compound C1=CC=C2SC(C3=CC4=CC=C(C=C4OC3=O)N(CC)CC)=NC2=C1 VBVAVBCYMYWNOU-UHFFFAOYSA-N 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 229920006332 epoxy adhesive Polymers 0.000 description 1
- GVEPBJHOBDJJJI-UHFFFAOYSA-N fluoranthrene Natural products C1=CC(C2=CC=CC=C22)=C3C2=CC=CC3=C1 GVEPBJHOBDJJJI-UHFFFAOYSA-N 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- PVADDRMAFCOOPC-UHFFFAOYSA-N germanium monoxide Inorganic materials [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 150000002484 inorganic compounds Chemical class 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- SHXXPRJOPFJRHA-UHFFFAOYSA-K iron(iii) fluoride Chemical compound F[Fe](F)F SHXXPRJOPFJRHA-UHFFFAOYSA-K 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Inorganic materials [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 1
- SKEDXQSRJSUMRP-UHFFFAOYSA-N lithium;quinolin-8-ol Chemical compound [Li].C1=CN=C2C(O)=CC=CC2=C1 SKEDXQSRJSUMRP-UHFFFAOYSA-N 0.000 description 1
- 125000000040 m-tolyl group Chemical group [H]C1=C([H])C(*)=C([H])C(=C1[H])C([H])([H])[H] 0.000 description 1
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- JKQOBWVOAYFWKG-UHFFFAOYSA-N molybdenum trioxide Inorganic materials O=[Mo](=O)=O JKQOBWVOAYFWKG-UHFFFAOYSA-N 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- DCZNSJVFOQPSRV-UHFFFAOYSA-N n,n-diphenyl-4-[4-(n-phenylanilino)phenyl]aniline Chemical compound C1=CC=CC=C1N(C=1C=CC(=CC=1)C=1C=CC(=CC=1)N(C=1C=CC=CC=1)C=1C=CC=CC=1)C1=CC=CC=C1 DCZNSJVFOQPSRV-UHFFFAOYSA-N 0.000 description 1
- YKZHNHRLNBPFBZ-UHFFFAOYSA-N n-[4-(4-aminophenyl)phenyl]benzo[a]anthracen-1-amine Chemical group C1=CC(N)=CC=C1C(C=C1)=CC=C1NC1=CC=CC2=CC=C(C=C3C(C=CC=C3)=C3)C3=C12 YKZHNHRLNBPFBZ-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229960003540 oxyquinoline Drugs 0.000 description 1
- 125000001037 p-tolyl group Chemical group [H]C1=C([H])C(=C([H])C([H])=C1*)C([H])([H])[H] 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920000553 poly(phenylenevinylene) Polymers 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 229920000128 polypyrrole Polymers 0.000 description 1
- 229920000123 polythiophene Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- DLJHXMRDIWMMGO-UHFFFAOYSA-N quinolin-8-ol;zinc Chemical compound [Zn].C1=CN=C2C(O)=CC=CC2=C1.C1=CN=C2C(O)=CC=CC2=C1 DLJHXMRDIWMMGO-UHFFFAOYSA-N 0.000 description 1
- YGSDEFSMJLZEOE-UHFFFAOYSA-M salicylate Chemical compound OC1=CC=CC=C1C([O-])=O YGSDEFSMJLZEOE-UHFFFAOYSA-M 0.000 description 1
- 229960001860 salicylate Drugs 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 150000003384 small molecules Chemical class 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- 125000001424 substituent group Chemical group 0.000 description 1
- 229910002058 ternary alloy Inorganic materials 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 125000002023 trifluoromethyl group Chemical group FC(F)(F)* 0.000 description 1
- ODHXBMXNKOYIBV-UHFFFAOYSA-N triphenylamine Chemical compound C1=CC=CC=C1N(C=1C=CC=CC=1)C1=CC=CC=C1 ODHXBMXNKOYIBV-UHFFFAOYSA-N 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Landscapes
- Electroluminescent Light Sources (AREA)
- Luminescent Compositions (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、有機薄膜のエレクトロ
ルミネセンス(以下単にELという)現象を利用した有
機薄膜EL素子に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an organic thin film EL device utilizing the electroluminescence (hereinafter simply referred to as EL) phenomenon of an organic thin film.
【0002】[0002]
【従来の技術】イーストマン・コダック社のC.W.T
angらに開発された有機薄膜EL素子は、特開昭59
−194393号公報、特開昭63−264692号公
報、特開昭63−295695号公報、アプライド・フ
ィジックス・レター第51巻第12号第913頁(19
87年)、およびジャーナル・オブ・アプライドフィジ
ックス第65巻第9号第3610頁(1989年)等に
よれば、一般的には陽極、有機正孔注入輸送層、電子輸
送発光層、陰極の順に構成され、以下のように作られて
いる。2. Description of the Related Art C. of Eastman Kodak Company. W. T
The organic thin film EL device developed by ang et al.
-194393, JP-A-63-264692, JP-A-63-295695, Applied Physics Letter Vol. 51 No. 12, page 913 (19)
1987), and Journal of Applied Physics Vol. 65, No. 9, page 3610 (1989) and the like, generally, an anode, an organic hole injecting and transporting layer, an electron transporting and emitting layer, and a cathode in this order. It is composed and made as follows.
【0003】図1に示すように、まず、ガラスや樹脂フ
ィルム等の透明絶縁性の基板(1)上に、蒸着又はスパ
ッタリング法等でインジウムとスズの複合酸化物(以下
ITOという)の透明導電性被膜の陽極(2)が形成さ
れる。次に有機正孔注入輸送層(3)として銅フタロシ
アニン、あるいは(化2)で示される化合物:As shown in FIG. 1, first, on a transparent insulating substrate (1) such as glass or a resin film, a transparent conductive material of a complex oxide of indium and tin (hereinafter referred to as ITO) is formed by a vapor deposition or sputtering method. The positive electrode (2) of the functional coating is formed. Next, copper phthalocyanine as the organic hole injecting and transporting layer (3) or a compound represented by the following chemical formula:
【0004】[0004]
【化2】 [Chemical 2]
【0005】1,1−ビス(4−ジーpートリルアミノ
フェニル)シクロヘキサン(融点181.4℃〜18
2.4℃)、あるいは(化3)で示される化合物:1,1-bis (4-di-p-tolylaminophenyl) cyclohexane (melting point 181.4 ° C.-18
2.4 ° C.) or a compound represented by (Chemical Formula 3):
【0006】[0006]
【化3】 [Chemical 3]
【0007】N,N,N’,N’−テトラ−p−トリル
−1,1’−ビフェニル−4,4’−ジアミン(融点1
20℃)等のテトラアリールジアミンを、0.1μm程
度以下の厚さに単層または積層して蒸着して形成する。N, N, N ', N'-tetra-p-tolyl-1,1'-biphenyl-4,4'-diamine (melting point 1
20 ° C.) tetraaryldiamine or the like having a thickness of about 0.1 μm or less is formed in a single layer or by stacking and vapor deposition.
【0008】次に有機正孔注入輸送層(3)上にトリス
(8−キノリノール)アルミニウム等の有機蛍光体を
0.1μm程度以下の厚さで蒸着し、有機電子輸送発光
層(4)を形成する。最後に、その上に陰極(5)とし
てMg:Ag,Ag:Eu,Mg:Cu,Mg:In,
Mg:Sn等の合金を共蒸着により2000Å程度蒸着
している。Then, an organic phosphor such as tris (8-quinolinol) aluminum is vapor-deposited on the organic hole injecting and transporting layer (3) to a thickness of about 0.1 μm or less to form an organic electron transporting and emitting layer (4). Form. Finally, Mg: Ag, Ag: Eu, Mg: Cu, Mg: In, as a cathode (5) thereon.
An alloy such as Mg: Sn is vapor-deposited on the order of 2000Å.
【0009】また、安達らは有機電子輸送発光層を、2
種類の材料を積層することにより有機発光層(6)と有
機電子注入輸送層(7)とに分けた素子を作製した。ア
プライド・フィズィックス・レター第57巻第6号第5
31頁(1990年)によると、その素子は、ITOの
陽極上に有機正孔注入輸送層(3)としてN,N’−ジ
フェニル−N,N’−ビス(3−メチルフェニル)−
1,1’−ビフェニル−4,4’−ジアミン(融点15
9〜163℃)有機発光層(6)として1−〔4−N,
N−ビス(p−メトキシフェニル)アミノスチリル〕ナ
フタレン、有機電子注入輸送層(7)として2−(4−
ビフェニリル)−5−(4−t−ブチルフェニル)−
1,3,4−オキサジアゾール(以下、単にBPBDと
いう)、陰極(5)としてMgとAgの合金を順に積層
している。In addition, Adachi et al.
A device in which an organic light emitting layer (6) and an organic electron injecting and transporting layer (7) were divided was produced by stacking various kinds of materials. Applied Physics Letter Vol. 57, No. 6, No. 5
According to p. 31 (1990), the device has N, N'-diphenyl-N, N'-bis (3-methylphenyl)-as an organic hole injecting and transporting layer (3) on an anode of ITO.
1,1'-biphenyl-4,4'-diamine (melting point 15
9-163 ° C.) 1- [4-N, as the organic light emitting layer (6)
N-bis (p-methoxyphenyl) aminostyryl] naphthalene, 2- (4-) as the organic electron injecting and transporting layer (7)
Biphenylyl) -5- (4-t-butylphenyl)-
1,3,4-oxadiazole (hereinafter simply referred to as BPBD) and an alloy of Mg and Ag as a cathode (5) are sequentially laminated.
【0010】しかし、上記で示した有機正孔注入輸送材
料は、銅フタロシアニンは耐熱性ではあるが可視光線波
長領域の吸収が大きく、また結晶性であるために蒸着膜
が凸凹になり、素子がショートし易くなる問題があっ
た。(化2)(化3)で示した化合物は、非晶質で平滑
な蒸着膜が得られ、可視光線波長領域での吸収もない
が、融点が低く、素子作製プロセスや素子駆動時の発熱
により、融解し発光層と混合してしまう問題があった。
例えばN,N’−ジフェニル−N,N’−ビス(3−メ
チルフェニル)−1,1’−ビフェニル−4,4’−ジ
アミンは、500Å程度の薄膜にし(8−キノリノー
ル)アルミニウムと積層した場合には95℃程度の温度
で混合してしまう問題があった。However, in the organic hole injecting and transporting material shown above, copper phthalocyanine is heat-resistant, but has a large absorption in the visible light wavelength region, and since it is crystalline, the vapor-deposited film becomes uneven, and the device is There was a problem that it became easy to short-circuit. The compounds shown in (Chemical Formula 2) and (Chemical Formula 3) are amorphous and have a smooth vapor-deposited film, and have no absorption in the visible light wavelength region, but have a low melting point and generate heat during the device manufacturing process or device driving. Therefore, there is a problem in that it melts and mixes with the light emitting layer.
For example, N, N'-diphenyl-N, N'-bis (3-methylphenyl) -1,1'-biphenyl-4,4'-diamine is formed into a thin film of about 500Å and laminated with (8-quinolinol) aluminum. In this case, there is a problem that mixing is performed at a temperature of about 95 ° C.
【0011】また、スピンコート法等の有機溶剤を用い
た塗布法で正孔注入輸送層を積層したり、正孔注入輸送
層上に発光層を形成しようとする場合、従来の3次元的
に架橋していない低分子からなる正孔注入輸送層では発
光層材料の溶剤により溶けてしまう場合が多かった。Further, when the hole injecting and transporting layer is laminated by the coating method using an organic solvent such as the spin coat method, or the light emitting layer is formed on the hole injecting and transporting layer, the conventional three-dimensional method is used. In many cases, the hole injecting and transporting layer composed of non-crosslinked low molecular weight compounds was dissolved by the solvent of the light emitting layer material.
【0012】[0012]
【発明が解決しようとする課題】上記で述べたように、
有機薄膜EL素子の正孔注入輸送層として、求められて
いる項目は次の3点があげられる。 1.無色透明で平滑な0.1μm以下の厚さに成膜でき
ること。 2.陽極から発光層への正孔注入輸送能力が高いこと。 3.200℃以上の耐熱性と有機溶媒に対し難溶化でき
ること。 本発明では以上の課題を解決した正孔注入輸送層を備え
た有機薄膜EL素子を提供することを目的としてなされ
たものである。DISCLOSURE OF THE INVENTION As described above,
The following three points are required for the hole injecting and transporting layer of the organic thin film EL device. 1. Capable of forming a film that is colorless and transparent and has a smooth thickness of 0.1 μm or less. 2. High ability to inject and transport holes from the anode to the light emitting layer. 3. Heat resistance of 200 ° C or higher and insolubility in organic solvents. The present invention has been made for the purpose of providing an organic thin film EL device having a hole injecting and transporting layer which solves the above problems.
【0013】[0013]
【課題を解決するための手段】本発明は、上記の課題に
鑑みてなされたものであって、少なくとも陽極、有機正
孔注入輸送層、有機電子輸送層、陰極から構成される有
機薄膜EL素子において、有機正孔注入輸送層が上記の
一般式(化1)で表される化合物の架橋体を含むことを
特徴とする有機薄膜EL素子である。上記の(化1)で
表される新規なテトラアリールジアミン化合物を正孔注
入輸送層として成膜した後、3次元的に架橋させること
で、高温に対し不融化および溶剤に対し不溶化させ課題
を解決した。The present invention has been made in view of the above problems, and is an organic thin film EL device including at least an anode, an organic hole injecting and transporting layer, an organic electron transporting layer, and a cathode. 2. In the organic thin film EL element, the organic hole injecting and transporting layer contains a cross-linked body of the compound represented by the general formula (Formula 1). After forming a film of the novel tetraaryldiamine compound represented by the above (Chemical Formula 1) as a hole injecting and transporting layer, three-dimensionally cross-linking it to make it infusible at high temperatures and insoluble in solvents. Settled.
【0014】以下に本発明の有機薄膜EL素子を模式的
に示す図1から図3までに基いて説明する。図1は、本
発明における有機薄膜EL素子を、基板(1)上に陽極
(2)、有機正孔注入輸送層(3)、有機電子輸送発光
層(4)、陰極(5)、封止層(8)の順に構成し、ガ
ラス板(9)を接着剤(10)にて接着して密封した場
合である。The organic thin film EL device of the present invention will be described below with reference to FIGS. 1 to 3. FIG. 1 shows an organic thin film EL device according to the present invention, in which an anode (2), an organic hole injecting and transporting layer (3), an organic electron transporting and emitting layer (4), a cathode (5), and an encapsulation are formed on a substrate (1). This is a case where the layers (8) are formed in this order, and the glass plate (9) is adhered with an adhesive (10) and sealed.
【0015】また図2に示すように、正孔注入輸送層
(3)を正孔注入能力を増すために本発明による正孔注
入輸送材料を含む複数の材料を用いて第1正孔注入輸送
層(11)、第2正孔注入輸送層(12)のように積層
して形成しても良い。As shown in FIG. 2, a plurality of materials including the hole injecting and transporting material according to the present invention are used in the hole injecting and transporting layer (3) to enhance the hole injecting ability. The layer (11) and the second hole injecting and transporting layer (12) may be laminated and formed.
【0016】さらに図3に示すように有機電子輸送発光
層(4)を有機発光層(6)と有機電子注入輸送層
(7)とに機能を分離し、基板(1)上に陽極(2)、
正孔注入輸送層(3)、有機発光層(6)、有機電子注
入輸送層(7)、陰極(5)封止層(8)の順に構成す
ることもできるし、同様の構成を基板上に陰極から逆の
順に構成してもよい。Further, as shown in FIG. 3, the organic electron transporting light emitting layer (4) is divided into an organic light emitting layer (6) and an organic electron injecting and transporting layer (7), and an anode (2) is formed on the substrate (1). ),
The hole injecting and transporting layer (3), the organic light emitting layer (6), the organic electron injecting and transporting layer (7), the cathode (5) and the sealing layer (8) can be formed in this order, or the same configuration can be obtained on the substrate. The cathode may be arranged in the reverse order.
【0017】陰極(2)は、ガラス等の透明絶縁性の基
板(1)上にITOや酸化亜鉛アルミニウムのような透
明導電性物質を真空蒸着やスパッタリング法等で被覆し
た表面抵抗10〜50Ω/平方、可視光線透過率80%
以上の透明電極、又は金やプラチナを薄く蒸着した半透
明電極が望ましい。The cathode (2) is a transparent insulating substrate (1) such as glass coated with a transparent conductive material such as ITO or zinc aluminum oxide by vacuum deposition or sputtering, and has a surface resistance of 10 to 50 Ω /. Square, visible light transmittance 80%
The transparent electrode described above or a semitransparent electrode in which gold or platinum is thinly vapor-deposited is desirable.
【0018】しかし、別の場合には、陽極(2)は不透
明で、正孔注入輸送層(3)を通して有機電子輸送発光
層(4)または有機発光層(6)へ正孔注入し易い仕事
関数の大きい金、プラチナ、ニッケル等の金属板、シリ
コン、ガリウムリン、アモルファス炭化シリコン等の仕
事関数が4.8eV以上の半導体基板、もしくはそれら
の金属や半導体を、絶縁性の基板(1)上に被覆した陽
極(2)に用い、陰極(5)を透明電極もしくは半透明
電極とすることもできる。陰極(5)も不透明であれ
ば、有機電子輸送発光層(4)または有機発光層(6)
の少なくとも一端が透明である必要がある。In another case, however, the anode (2) is opaque and the hole injection / transport layer (3) facilitates hole injection into the organic electron transport light emitting layer (4) or the organic light emitting layer (6). A metal plate having a large function such as gold, platinum, or nickel, a semiconductor substrate such as silicon, gallium phosphide, or amorphous silicon carbide having a work function of 4.8 eV or more, or those metals or semiconductors on an insulating substrate (1) The cathode (5) can be a transparent electrode or a semi-transparent electrode by using it for the anode (2) coated on. If the cathode (5) is also opaque, the organic electron transport light emitting layer (4) or the organic light emitting layer (6)
Must be transparent on at least one end.
【0019】次に、本発明の有機正孔注入輸送層(3)
を陽極(2)上に形成する。本発明に用いる正孔輸送層
は、一般式(1)で示されるテトラアリールジアミン化
合物(以下STTPDと略す)を用いて形成する。この
化合物は、10-3cm2 /v・sec程度と大きい正孔
移動度を持つN,N,N’,N’−テトラフェニルベン
ジジンを骨格とした分子であり、可視領域で無色透明、
非晶質で平滑な膜を形成できる。分子間を熱および光で
3次元的に架橋するための基として、その2つのフェニ
ル基にスチリルメトキシ基を導入した。Next, the organic hole injecting and transporting layer (3) of the present invention
Are formed on the anode (2). The hole transport layer used in the present invention is formed by using the tetraaryldiamine compound represented by the general formula (1) (hereinafter abbreviated as STTPD). This compound is a molecule having N, N, N ′, N′-tetraphenylbenzidine as a skeleton, which has a large hole mobility of about 10 −3 cm 2 / v · sec, and is colorless and transparent in the visible region.
An amorphous and smooth film can be formed. A styrylmethoxy group was introduced into the two phenyl groups as a group for three-dimensionally crosslinking the molecules with heat and light.
【0020】STTPDは、ユーロパテント02951
15公報に記載されているN,N’−ビス(ヒドロキシ
フェニル)−N,N’−ジフェニル−ベンジジンにクロ
ロメチルスチレンを反応させて得られるが、さらに正孔
移動度を向上させる目的でN,N,N’,N’−テトラ
フェニルベンジジン骨格上に複数のメチル基を導入して
も良い。STTPD is Euro Patent 02951
It can be obtained by reacting N, N′-bis (hydroxyphenyl) -N, N′-diphenyl-benzidine with chloromethylstyrene described in JP-A No. 15-58, but for the purpose of further improving hole mobility, N, Plural methyl groups may be introduced on the N, N ′, N′-tetraphenylbenzidine skeleton.
【0021】STTPDの成膜方法は真空蒸着法やトル
エン等の有機溶媒に溶かしてスピンコーティングするこ
とにより行なわれ、正孔注入輸送層の厚さは、単層また
は積層により形成される場合において1μm以下であ
り、好ましくは0.03〜0.1μmである。STTP
D分子間の架橋は成膜後に70℃〜240℃に加熱しな
がら紫外線を照射することにより行なわれる。この際、
不活性ガス雰囲気、または真空中等、酸素がない状態が
望ましい。The film formation method of STTPD is carried out by vacuum vapor deposition or by dissolving in an organic solvent such as toluene and spin coating, and the thickness of the hole injecting and transporting layer is 1 μm when formed as a single layer or a laminated layer. It is below, and preferably 0.03 to 0.1 μm. STTP
Cross-linking between D molecules is performed by irradiating with ultraviolet rays while heating at 70 ° C. to 240 ° C. after film formation. On this occasion,
It is desirable that there is no oxygen such as in an inert gas atmosphere or in a vacuum.
【0022】本発明においては、図1に示したようにS
TTPDの架橋体単層で有機正孔注入輸送層(3)を形
成することができるが、図2に示したように他の有機正
孔注入輸送材料と積層して用いることもできる。この
際、STTPDの架橋体を第2正孔注入輸送層(12)
として用いれば、第1正孔注入輸送層(11)には結晶
性の銅フタロシアニンのような物質の蒸着膜を用いても
ショートしにくいEL素子ができる。In the present invention, as shown in FIG.
Although the organic hole injecting and transporting layer (3) can be formed by a single layer of a crosslinked body of TTPD, it can also be used by laminating it with another organic hole injecting and transporting material as shown in FIG. At this time, the crosslinked body of STTPD is used as the second hole injecting and transporting layer (12).
In this case, it is possible to form an EL element which is unlikely to cause short circuit even if a vapor deposition film of a material such as crystalline copper phthalocyanine is used for the first hole injecting and transporting layer (11).
【0023】STTPDの架橋体を第1正孔注入輸送層
(11)とし、他の材料を第2正孔注入輸送層(12)
とすることもできるし、3層以上積層することもでき
る。STTPDの架橋体の正孔注入輸送材料上には有機
溶剤可溶性物質をスピンコーティングして成膜すること
も可能であり、またSTTPD中に低分子正孔輸送材料
やビニル基、アリル基、メタクリロイルオキシメチル
基、メタクリロイルオキシ基、メタクリロイルオキシエ
チル基、アクリロイル基、アクリロイルオキシメチル
基、アクリロイルオキシエチル基、シンナモイル基、ス
チリルメトキシ基、プロピオロイル基、プロパルギル基
等の重合性、架橋性の置換基を有する他の正孔輸送材料
および蛍光性分子等を混合して重合、架橋することも可
能である。The crosslinked body of STTPD is used as the first hole injecting and transporting layer (11), and other materials are used as the second hole injecting and transporting layer (12).
It is also possible to use the above, and it is also possible to stack three or more layers. It is also possible to spin-coat an organic solvent-soluble substance on the hole injecting and transporting material of the crosslinked product of STTPD to form a film, and to form a low molecular weight hole transporting material, vinyl group, allyl group, methacryloyloxy in STTPD. Others having polymerizable and crosslinkable substituents such as methyl group, methacryloyloxy group, methacryloyloxyethyl group, acryloyl group, acryloyloxymethyl group, acryloyloxyethyl group, cinnamoyl group, styrylmethoxy group, propioloyl group, propargyl group, etc. It is also possible to polymerize and crosslink by mixing the hole transporting material, the fluorescent molecule and the like.
【0024】STTPDの架橋体から成る正孔注入輸送
層と積層する他の有機正孔注入輸送層材料としては、ポ
リアニリン、ポリピロール、ポリチオフェン、ポリチエ
ニレンビニレン、ポリフェニレンビニレンおよびこれら
にアルキル基やアルコキシ基を導入し溶媒可溶性とした
導電性ポリマー、バックミンスターフラレン(C60)
等の球状炭素クラスター、銅フタロシアニン、無金属フ
タロシアニン等のフタロシアニン類、もしくは、1、1
−ビス(4−ジーp−トリルアミノフェニル)シクロヘ
キサン、N,N’−ジフェニル−N,N’−ビス(3−
メチルフェニル)−1,1’−ビフェニル−4,4’−
ジアミン、N,N’−ジフェニル−N,N’−ビス(p
ートリル)1,1’−ビフェニル−4,4’−ジアミ
ン、N,N,N’,N’−テトラ(pートリル)−4,
4’−ジアミノビフェニル等のトリフェニルアミンおよ
びテトラフェニルジアミン誘導体およびそれらのメチル
基、フッ素もしくはトリフロロメチル基の置換体があげ
られるが、特に以上の例に限定されるものではない。Other organic hole injecting and transporting layer materials to be laminated with the hole injecting and transporting layer composed of a cross-linked body of STTPD include polyaniline, polypyrrole, polythiophene, polythienylenevinylene, polyphenylenevinylene and alkyl groups and alkoxy groups thereof. , A conductive polymer that was made soluble by solvent, Buckminster fullerene (C60)
Such as spherical carbon clusters, copper phthalocyanines, phthalocyanines such as metal-free phthalocyanines, or 1, 1
-Bis (4-di-p-tolylaminophenyl) cyclohexane, N, N'-diphenyl-N, N'-bis (3-
Methylphenyl) -1,1'-biphenyl-4,4'-
Diamine, N, N'-diphenyl-N, N'-bis (p
Toluryl) 1,1′-biphenyl-4,4′-diamine, N, N, N ′, N′-tetra (p-tolyl) -4,
Examples thereof include triphenylamine and tetraphenyldiamine derivatives such as 4′-diaminobiphenyl and their methyl group-, fluorine- or trifluoromethyl group-substituted compounds, but are not particularly limited to the above examples.
【0025】次に有機正孔注入輸送層(3)上に、有機
電子輸送発光層(4)を形成するが、有機電子輸送発光
層(4)に用いる蛍光体は、可視領域に蛍光を有し、適
当な方法で成膜できる任意の蛍光体が可能である。例え
ば、アントラセン、サリチル酸塩、ピレン、コロネン、
ペリレン、テトラフェニルブタジエン、9,10−ビス
(フェニルエチニル)アントラセン、8−キノリノール
リチウム、トリス(8−キノリノール)アルミニウム、
トリス(5,7−ジクロロ,8−キノリノール)アルミ
ニウム、トリス(5−クロロ−8−キノリノール)アル
ミニウム、ビス(8−キノリノール)亜鉛、トリス(5
−フルオロ−8−キノリノール)アルミニウム、ビス
〔8−(パラートシル)アミノキノリン〕亜鉛錯体およ
びカドミウム錯体、1,2,3,4−テトラフェニルシ
クロペンタジエン、ペンタフェニルシクロペンタジエン
等があげられる。Next, the organic electron transporting light emitting layer (4) is formed on the organic hole injecting and transporting layer (3). The phosphor used for the organic electron transporting light emitting layer (4) has fluorescence in the visible region. However, any phosphor that can be formed into a film by an appropriate method is possible. For example, anthracene, salicylate, pyrene, coronene,
Perylene, tetraphenyl butadiene, 9,10-bis (phenylethynyl) anthracene, 8-quinolinol lithium, tris (8-quinolinol) aluminum,
Tris (5,7-dichloro, 8-quinolinol) aluminum, tris (5-chloro-8-quinolinol) aluminum, bis (8-quinolinol) zinc, tris (5
Examples include -fluoro-8-quinolinol) aluminum, bis [8- (paratosyl) aminoquinoline] zinc complex and cadmium complex, 1,2,3,4-tetraphenylcyclopentadiene, and pentaphenylcyclopentadiene.
【0026】有機電子輸送発光層(4)中の蛍光体は、
発光波長変換、発光効率向上のために、クマリン系やキ
ナクリドン系、ペリレン系、ピラン系等の2種類以上の
蛍光体を混合するか、多種類の蛍光体の発光層を2層以
上積層してもよく、そのうちの一方は赤外域または紫外
域に蛍光を示すものであってもよい。The phosphor in the organic electron transporting light emitting layer (4) is
In order to convert the emission wavelength and improve the emission efficiency, two or more kinds of phosphors such as coumarin-based, quinacridone-based, perylene-based and pyran-based phosphors are mixed, or two or more light-emitting layers of multiple kinds of phosphors are laminated. Alternatively, one of them may exhibit fluorescence in the infrared region or the ultraviolet region.
【0027】有機電子輸送発光層(4)の成膜方法は、
真空蒸着法、累積膜法、または適当な樹脂バインダー中
に分散させてスピンコートなどの方法でコーティングす
ることにより行なわれる。有機電子輸送発光層(4)の
膜厚は、単層または積層により形成する場合においても
1μm以下であり、好ましくは50Å〜1000Åであ
る。The method of forming the organic electron transporting light emitting layer (4) is as follows.
It is carried out by a vacuum vapor deposition method, a cumulative film method, or by dispersing in a suitable resin binder and coating by a method such as spin coating. The film thickness of the organic electron transporting light emitting layer (4) is 1 μm or less even when it is formed by a single layer or a laminated layer, and preferably 50Å to 1000Å.
【0028】次に有機電子輸送発光層(4)を有機発光
層(7)と電子注入輸送層(8)とに機能分離して配す
る場合、電子注入輸送材料の好ましい条件は、電子移動
度が大きく、LUMOのエネルギーレベルが有機発光層
材料のLUMOのエネルギーレベルと同程度から陰極材
料のフェルミレベルの間にあり、仕事関数が有機発光層
材料より大きく、成膜性が良いことである。さらに陽極
(2)が不透明で、透明もしくは半透明の陰極(5)か
ら光を取り出す構成の素子においては少なくとも有機発
光層材料の蛍光波長領域において実質的に透明である必
要がある。例としては、BPBD、3,4,9,10−
ペリレンテトラカルボキシル−ビス−べンズイミダゾー
ルなどがあげられるが、上記例に特に限定されるもので
はない。Next, when the organic electron transporting light emitting layer (4) is functionally separated into the organic light emitting layer (7) and the electron injecting and transporting layer (8), the preferable condition of the electron injecting and transporting material is electron mobility. Is large, the LUMO energy level is between the same level as the LUMO energy level of the organic light emitting layer material and the Fermi level of the cathode material, the work function is larger than that of the organic light emitting layer material, and the film forming property is good. Further, in the element in which the anode (2) is opaque and the light is extracted from the transparent or semitransparent cathode (5), it is necessary that it is substantially transparent at least in the fluorescence wavelength region of the organic light emitting layer material. Examples include BPBD, 3,4,9,10-
Examples include perylene tetracarboxyl-bis-benzimidazole, but not limited to the above examples.
【0029】有機電子注入輸送層(7)の成膜方法は、
真空蒸着法、累積膜法、または適当な樹脂バインダー中
に分散させてスピンコートなどの方法でコーティングす
ることにより行なわれる。次に陰極(5)を有機電子注
入輸送層(7)上に形成する。陰極は、電子注入を効果
的に行なうために低仕事関数の物質が使われ、Li,N
a,Mg,Ca,Sr,Al,Ag,In,Sn,Z
n,Zr等の金属元素単体、または安定性を向上させる
ためにそれらを含む2成分、3成分の合金系が用いられ
る。The method for forming the organic electron injecting and transporting layer (7) is as follows.
It is carried out by a vacuum vapor deposition method, a cumulative film method, or by dispersing in a suitable resin binder and coating by a method such as spin coating. Next, the cathode (5) is formed on the organic electron injecting and transporting layer (7). For the cathode, a low work function material is used to effectively inject electrons, and Li, N
a, Mg, Ca, Sr, Al, Ag, In, Sn, Z
A single metal element such as n, Zr or the like, or a binary or ternary alloy system containing them for improving the stability is used.
【0030】仕事関数の例としてはMg単体で約3.6
eVであり、MgにLi等アルカリ金属を添加した場合
は3.1〜3.2eVに低下する。陰極(5)の形成方
法は、抵抗加熱方法により10-5Torrオーダー以下
の真空度の下で成分ごとに別々の蒸着源から水晶振動子
式膜厚形でモニターしながら共蒸着する。このとき、
0.01〜0.3μm程度の膜厚で形成されるが、電子
ビーム蒸着法、イオンプレーティング法やスパッタリン
グ法により共蒸着ではなく、合金ターゲットを用いて成
膜することもできる。As an example of the work function, Mg alone is about 3.6.
It is eV and decreases to 3.1 to 3.2 eV when an alkali metal such as Li is added to Mg. As a method of forming the cathode (5), co-evaporation is performed by a resistance heating method under a vacuum degree of 10 −5 Torr order or less while monitoring the crystal oscillator film thickness type from different vapor deposition sources for each component. At this time,
The film is formed with a film thickness of about 0.01 to 0.3 μm, but it is also possible to use an alloy target instead of co-deposition by the electron beam evaporation method, the ion plating method or the sputtering method.
【0031】次に素子の有機層、電極の酸化を防ぐため
に素子上に封止層(8)を形成する。封止層(8)は陰
極(5)の形成後直ちに形成する。封止層材料の例とし
ては、SiO2 ,SiO,GeO,MoO3 等の酸化
物、MgF2 ,LiF,BaF 2 ,AlF3 ,FeF3
等の沸化物、GeS,SnS等の硫化物等のバリアー性
の高い無機化合物があげられるが、上記例に限定される
ものではない。これらを単体または複合して蒸着、スパ
ッタリング法、イオンプレーティング法等により成膜す
る。抵抗加熱方式で蒸着する場合には、低温で蒸着でき
るGeOが優れている。Next, in order to prevent oxidation of the organic layers and electrodes of the device
A sealing layer (8) is formed on the device. The sealing layer (8) is shade
It is formed immediately after the pole (5) is formed. As an example of sealing layer material
For SiO2, SiO, GeO, MoO3Oxidation of etc.
Thing, MgF2, LiF, BaF 2, AlF3, FeF3
Barrier properties of fluorinated compounds such as GeS, SnS, etc.
Inorganic compounds with high
Not a thing. These can be used alone or in combination to deposit and spa
The film is formed by the tattering method, the ion plating method, etc.
It When using the resistance heating method, you can deposit at a low temperature.
GeO is excellent.
【0032】さらに湿気の浸入を防ぐ為に低吸湿性の光
硬化性接着剤、エポキシ系接着剤等の接着性樹脂層(1
0)を用いて、ガラス板等の封止板(9)を接着し密封
する。ガラス板以外にも金属板、プラスチック板等を用
いることもできる。以上のように構成した有機薄膜EL
素子は、有機正孔注入輸送層(3)側を正として電源
(13)にリード線(14)で接続し直流電圧を印加す
ることにより発光するが、交流電圧を印加した場合にも
有機正孔注入輸送層(3)側の電極が正に電圧印加され
ている間は発光する。Further, in order to prevent the infiltration of moisture, an adhesive resin layer (1) having a low hygroscopicity, such as a photocurable adhesive or an epoxy adhesive.
0) is used to adhere and seal a sealing plate (9) such as a glass plate. Besides the glass plate, a metal plate, a plastic plate or the like can be used. Organic thin film EL constructed as described above
The device emits light by connecting the power source (13) to the power supply (13) with the lead wire (14) with the positive side of the organic hole injecting and transporting layer (3) side and applying a direct current voltage. Light is emitted while a positive voltage is applied to the electrode on the hole injecting and transporting layer (3) side.
【0033】[0033]
【作用】このテトラアリールジアミン化合物を成膜した
後、3次元的に架橋させることで、高温に対し不融化お
よび溶剤に対し不溶化させ、課題を解決した。すなわ
ち、無色透明で平滑な0.1μm以下の厚さの膜が形成
でき、陽極から発光層への正孔注入輸送能力が高く、2
00℃以上の高い耐熱性と一般の有機溶媒に対し難溶化
できる。After the tetraaryldiamine compound is formed into a film, it is three-dimensionally crosslinked to make it infusible at a high temperature and insoluble in a solvent, thereby solving the problem. That is, a colorless transparent and smooth film having a thickness of 0.1 μm or less can be formed, and the capability of injecting and transporting holes from the anode to the light emitting layer is high.
It has a high heat resistance of more than 00 ° C and is hardly soluble in general organic solvents.
【0034】[0034]
<実施例1>以下、本発明のEL素子の実施例を図1に
従って、説明する。まず、透明絶縁性の基板(1)とし
て、厚さ1.1mmのガラス板を用い、この上に120
0ÅのITOを被覆して陽極(2)とした。この透明導
電性ガラス基板を十分に洗浄後、STTPDを約500
Å真空蒸着した後、真空中でHg−Xeランプを1時間
照射(紫外線強度はオーク製作所製UV−25シリコン
フォトダイオードセンサーで測定し2.8mW/c
m2 )しながら200℃まで加熱し3次元的に分子を架
橋した。Example 1 An example of the EL device of the present invention will be described below with reference to FIG. First, as the transparent insulating substrate (1), a glass plate having a thickness of 1.1 mm was used, and a glass plate 120
The anode (2) was coated with 0Å ITO. After thoroughly cleaning this transparent conductive glass substrate, STTPD is applied to about 500
Å After vacuum deposition, irradiate Hg-Xe lamp for 1 hour in vacuum (ultraviolet intensity is 2.8 mW / c measured by UV-25 silicon photodiode sensor manufactured by Oak Manufacturing Co., Ltd.)
m 2 ) while heating to 200 ° C. to cross-link the molecules three-dimensionally.
【0035】次に有機電子輸送発光層(4)としてトリ
ス(8−キノリノール)アルミニウムを500Å蒸着
し、その上面に陰極としてMgとAgを蒸着速度比1
0:1で2200Å蒸着した。最後に封止層(8)とし
てGeOを2.2μm蒸着後、ガラス板(9)を紫外線
硬化接着剤で接着し密封した。この素子は5V以上の直
流電圧印加により黄緑色に発光し、18Vにおいて20
70cd/m2 の輝度が得られた。Next, tris (8-quinolinol) aluminum was vapor-deposited as an organic electron-transporting light-emitting layer (4) at a rate of 500 Å, and Mg and Ag as a cathode were vapor-deposited at a rate ratio of 1 on the upper surface thereof.
2200Å was vapor-deposited at 0: 1. Finally, GeO was deposited to a thickness of 2.2 μm as a sealing layer (8), and then a glass plate (9) was bonded and sealed with an ultraviolet curing adhesive. This device emits yellowish green light when a DC voltage of 5V or more is applied, and it is 20V at 18V.
A brightness of 70 cd / m 2 was obtained.
【0036】<実施例2>実施例1と同様の陽極(2)
上に、第1正孔注入輸送層として銅フタロシアニンを2
00Å蒸着し、さらにその上に第2正孔注入輸送層とし
てSTTPDを500Å蒸着した。以後、実施例1と同
様に素子を作製した。この素子は11Vで1100cd
/m2 の輝度であった。Example 2 Anode (2) similar to Example 1
On top of it, copper phthalocyanine is used as the first hole injecting and transporting layer.
00Å was vapor-deposited, and STTPD was further vapor-deposited thereon as a second hole injecting and transporting layer. After that, an element was manufactured in the same manner as in Example 1. This device is 1100 cd at 11V
The brightness was / m 2 .
【0037】<実施例3>実施例1と同様の陽極(2)
上に、第1正孔注入輸送層として銅フタロシアニンを1
50Å蒸着した。次に第2正孔注入輸送層としてSTT
PDを400Å蒸着し、実施例1と同様にSTTPDの
架橋を行なった。次に第3正孔注入輸送層としてN,
N’−ジフェニル−N,N’−ビス(3−メチルフェニ
ル)−1,1’−ビフェニル−4,4’−ジアミンを1
50Å蒸着した。次に有機電子輸送発光層としてクマリ
ン540を含むトリス(8−キノリノール)アルミニウ
ムを450Å蒸着し、その上面に陰極としてLiを含む
Mgを2200Å蒸着した。<Example 3> Anode (2) similar to Example 1
On top, 1 layer of copper phthalocyanine is formed as the first hole injecting and transporting layer.
50Å evaporated. Next, as a second hole injecting and transporting layer, STT
PD was deposited by 400Å, and STTPD was crosslinked in the same manner as in Example 1. Next, as a third hole injecting and transporting layer, N,
N'-diphenyl-N, N'-bis (3-methylphenyl) -1,1'-biphenyl-4,4'-diamine was added to 1
50Å evaporated. Next, tris (8-quinolinol) aluminum containing coumarin 540 was vapor-deposited as an organic electron-transporting light emitting layer at 450 Å, and Mg containing Li as a cathode was vapor-deposited at 2200 Å on the upper surface thereof.
【0038】最後に封止層としてGeoを1.5μm蒸
着後、ガラス板を紫外線硬化接着剤で接着し密封した。
この素子は3V以上の直流電圧印加により緑色に発光し
16Vにおいて輝度9720cd/m2 、電流密度25
0mA/cm2 であった。Finally, Geo was deposited to a thickness of 1.5 μm as a sealing layer, and a glass plate was adhered and sealed with an ultraviolet curing adhesive.
This device emits green light by applying a DC voltage of 3 V or more, and has a luminance of 9720 cd / m 2 and a current density of 25 V at 16 V.
It was 0 mA / cm 2 .
【0039】<実施例4>STTPDを石英板上に50
0Å蒸着し実施例1と同じ条件で架橋させた。この膜は
可視光線領域の波長で透明で、エタノール、トルエン、
700ホルム等の有機溶媒に不溶であった。 また、実
施例1〜3の素子のクロロSTTPDの層をSTTPD
のトルエン溶液をスピンコートすることによっても、素
子を作製することができた。<Example 4> 50 STTPDs were placed on a quartz plate.
It was vapor-deposited with 0Å and crosslinked under the same conditions as in Example 1. This film is transparent at wavelengths in the visible light range and includes ethanol, toluene,
It was insoluble in an organic solvent such as 700 form. In addition, the layer of chloro STTPD of the devices of Examples 1 to 3 was formed into STTPD.
The device could also be produced by spin-coating the toluene solution of 1.
【0040】[0040]
【発明の効果】以上述べたように、本発明の有機薄膜E
L素子によれば、テトラアリールジアミン化合物の架橋
体を正孔注入輸送層に用いることにより、有機溶媒不溶
で耐熱性が高く平滑で透明である正孔注入輸送層が得ら
れ、基板温度が100℃以上に上がるプロセスやスピン
コーティング法など多様な有機薄膜素子作製プロセスを
可能とする効果がある。本発明の有機薄膜EL素子によ
れば、製造工程での過酷な条件に耐え、高性能で安定し
た品質の有機薄膜EL素子となるものである。As described above, the organic thin film E of the present invention is
According to the L element, by using a cross-linked tetraaryldiamine compound in the hole injecting and transporting layer, a hole injecting and transporting layer that is insoluble in an organic solvent, has high heat resistance, is smooth, and is transparent, and has a substrate temperature of 100. It has an effect of enabling various organic thin film element manufacturing processes such as a process of increasing the temperature above ℃ and a spin coating method. According to the organic thin film EL element of the present invention, the organic thin film EL element withstands harsh conditions in the manufacturing process and has high performance and stable quality.
【0041】[0041]
【図1】本発明の有機薄膜EL素子の一実施例を示す説
明図である。FIG. 1 is an explanatory diagram showing an example of an organic thin film EL element of the present invention.
【図2】本発明の有機薄膜EL素子の他の実施例を示す
説明図である。FIG. 2 is an explanatory view showing another embodiment of the organic thin film EL element of the present invention.
【図3】本発明の有機薄膜EL素子の他の実施例を示す
説明図である。FIG. 3 is an explanatory view showing another embodiment of the organic thin film EL element of the present invention.
(1)基板 (2)陽極 (3)有機正孔注入輸送層 (4)有機電子輸送発光層 (5)陰極 (6)有機発光層 (7)有機電子注入輸送層 (8)封止層 (9)ガラス板 (10)接着性樹脂層 (11)第1正孔注入輸送層 (12)第2正孔注入輸送層 (13)電源 (14)リード線 (15)陰極取り出し口 (1) Substrate (2) Anode (3) Organic hole injecting and transporting layer (4) Organic electron transporting and emitting layer (5) Cathode (6) Organic light emitting layer (7) Organic electron injecting and transporting layer (8) Sealing layer ( 9) Glass plate (10) Adhesive resin layer (11) First hole injecting and transporting layer (12) Second hole injecting and transporting layer (13) Power supply (14) Lead wire (15) Cathode outlet
Claims (2)
機電子輸送層、陰極から構成される有機薄膜EL素子に
おいて、有機正孔注入輸送層が下記の一般式(化1)で
表される化合物の架橋体を含むことを特徴とする有機薄
膜EL素子。 【化1】 1. In an organic thin film EL device comprising at least an anode, an organic hole injecting and transporting layer, an organic electron transporting layer and a cathode, the organic hole injecting and transporting layer is represented by the following general formula (Formula 1). An organic thin film EL device comprising a cross-linked compound. [Chemical 1]
れる化合物を用いて形成される層と他の有機正孔輸送材
料から形成される層との積層構造になっていることを特
徴とする請求項1記載の有機薄膜EL素子。2. The organic hole transport layer has a laminated structure of a layer formed using a compound represented by the general formula (Formula 1) and a layer formed of another organic hole transport material. The organic thin film EL element according to claim 1, wherein
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4072009A JPH05271652A (en) | 1992-03-30 | 1992-03-30 | Organic thin-film el element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4072009A JPH05271652A (en) | 1992-03-30 | 1992-03-30 | Organic thin-film el element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH05271652A true JPH05271652A (en) | 1993-10-19 |
Family
ID=13476990
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4072009A Pending JPH05271652A (en) | 1992-03-30 | 1992-03-30 | Organic thin-film el element |
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Country | Link |
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JP (1) | JPH05271652A (en) |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0643118A1 (en) * | 1993-09-09 | 1995-03-15 | Takakazu Yamamoto | El element using polythiophene |
FR2726692A1 (en) * | 1994-11-08 | 1996-05-10 | Thomson Csf | ELECTROLUMINESCENT DIODE BASED ON RETICULATED POLYMER AND ELECTROLUMINESCENT GRAFT POLYMER |
JPH1035004A (en) * | 1996-03-01 | 1998-02-10 | Fuji Electric Co Ltd | Optical printer head |
JPH118069A (en) * | 1997-02-17 | 1999-01-12 | Nippon Steel Corp | Organic electroluminescent element and its manufacture |
JP2000156291A (en) * | 1998-11-19 | 2000-06-06 | Seiko Epson Corp | Electroluminescent element and its manufacture |
KR20040053407A (en) * | 2002-12-14 | 2004-06-24 | (주)그라쎌 | Organic electroluminescent device |
EP1753047A2 (en) * | 2005-08-08 | 2007-02-14 | Osram Opto Semiconductors GmbH | Solution processed crosslinkable hole injection and hole transport polymers for oleds |
JP2008189920A (en) * | 1994-12-28 | 2008-08-21 | Cambridge Display Technol Ltd | Polymer and optical element |
JP2010118653A (en) * | 2008-10-16 | 2010-05-27 | Hitachi Chem Co Ltd | Organic electronics material, organic electronics element and organic electroluminescence element using the material, and display device, illumination device, display element |
-
1992
- 1992-03-30 JP JP4072009A patent/JPH05271652A/en active Pending
Cited By (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5540999A (en) * | 1993-09-09 | 1996-07-30 | Takakazu Yamamoto | EL element using polythiophene |
EP0853113A1 (en) * | 1993-09-09 | 1998-07-15 | Takakazu Yamamoto | E1 Element using polythiophene |
EP0643118A1 (en) * | 1993-09-09 | 1995-03-15 | Takakazu Yamamoto | El element using polythiophene |
FR2726692A1 (en) * | 1994-11-08 | 1996-05-10 | Thomson Csf | ELECTROLUMINESCENT DIODE BASED ON RETICULATED POLYMER AND ELECTROLUMINESCENT GRAFT POLYMER |
EP0712171A1 (en) * | 1994-11-08 | 1996-05-15 | Thomson-Csf | Light emitting diode with crosslinked polymer and light emitting graft polymer |
JP2008189920A (en) * | 1994-12-28 | 2008-08-21 | Cambridge Display Technol Ltd | Polymer and optical element |
JPH1035004A (en) * | 1996-03-01 | 1998-02-10 | Fuji Electric Co Ltd | Optical printer head |
JPH118069A (en) * | 1997-02-17 | 1999-01-12 | Nippon Steel Corp | Organic electroluminescent element and its manufacture |
JP2000156291A (en) * | 1998-11-19 | 2000-06-06 | Seiko Epson Corp | Electroluminescent element and its manufacture |
KR20040053407A (en) * | 2002-12-14 | 2004-06-24 | (주)그라쎌 | Organic electroluminescent device |
EP1753047A2 (en) * | 2005-08-08 | 2007-02-14 | Osram Opto Semiconductors GmbH | Solution processed crosslinkable hole injection and hole transport polymers for oleds |
JP2007049153A (en) * | 2005-08-08 | 2007-02-22 | Osram Opto Semiconductors Gmbh | Electroluminescence device and method of manufacturing the same |
EP1753047A3 (en) * | 2005-08-08 | 2011-01-26 | OSRAM Opto Semiconductors GmbH | Solution processed crosslinkable hole injection and hole transport polymers for oleds |
JP2010118653A (en) * | 2008-10-16 | 2010-05-27 | Hitachi Chem Co Ltd | Organic electronics material, organic electronics element and organic electroluminescence element using the material, and display device, illumination device, display element |
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