JPH06325871A - Organic electroluminescent element - Google Patents

Abstract

PURPOSE:To suppress drop of the light emitting characteristics by furnishing an interface layer containing an organic silicon compound between an organic light emitting layer and a cathode, and improving the tight attaching performance. CONSTITUTION:An anode 2a, organic light emitting layer, and cathode 2b are laminated on a base board 1, wherein the organic light emitting layer is formed from a hole conveying layer 3a and an organic electron conveying layer 3b. The organic light emitting layer transports holes implanted from the anode 2a and electrons implanted from the cathode 2b effectively between the electrodes given an electric field and performs recoupling. An interface layer 4 containing an organic silicon compound is furnished between this light emitting layer and the cathode 2b, and no reaction will take place between the cathode and the organic light emitting layer material, which improves the tight attaching performance. This allows maintaining the light emitting characteristics stable for a long period of time. and it is possible to suppress generation of dark spots.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an organic electroluminescence device, and more particularly, to a thin film type device which emits light by applying an electric field to a light emitting layer made of an organic compound.

[0002]

2. Description of the Related Art Conventionally, as a thin film type electroluminescent device,
ZnS and Ca which are II-VI group compound semiconductors of inorganic materials
In S, SrS, etc., Mn, which is the emission center, and rare earth elements (E
(u, Ce, Tb, Sm, etc.) is generally doped, but an electroluminescent device made of the above inorganic material is
1) AC drive is required (50 to 1000 Hz), 2) High drive voltage (up to 200 V), 3) Full colorization is difficult (especially blue color is a problem), and 4) Peripheral drive circuit cost is high. Have

However, in recent years, in order to improve the above problems,
Electroluminescent devices using organic thin films have been developed. In particular, the electrode type was optimized for the purpose of improving the efficiency of carrier injection from the electrode in order to increase the light emission efficiency, and an organic hole transport layer composed of an aromatic diamine and a light emitting layer composed of an aluminum complex of 8-hydroxyquinoline. Of an organic electroluminescent device provided with (Appl. Phys.
Lett. , 51, 913, 1987),
Compared with the conventional electroluminescent device using a single crystal such as anthracene, the luminous efficiency has been significantly improved.

As the organic light emitting layer, poly (p-phenylene vinylene) (Nature, Volume 347, 539) is used.
P., 1990; Appl. Phys. Lett. , 6
1, 2793, 1992), poly [2-methoxy, 5- (2'-ethylhexoxy) -1,4-phenylenevinylene] (Appl. Phys. Lett., 5).
Volume 8, 1982, 1991; Thin Solid.
Films, 216, 96, 1992; Nat
ure, 357, p. 477, 1992), poly (3
-Alkylthiophene) (Jpn.J.Appl.Ph)
ys, vol. 30, L1938, 1991; App
l. Phys. , 72, 564, 1992), etc., and development of polymer materials such as polyvinylcarbazole and luminescent materials and electron transfer materials (applied physics, 61, 1044, 1992). Being developed.

In the organic electroluminescent device as described above, indium tin oxide (IT) is usually used as the anode.
Although a transparent electrode such as O) is used, a metal electrode having a low work function is used for the cathode in order to efficiently inject electrons, and magnesium alloy, calcium or the like is used. The biggest problem of the organic electroluminescence device is the life of the device, and one of the factors that limits the life is the occurrence of dark spots (indicating the part of the device that does not emit light) due to the cathode material. For this reason, the number and size of dark spots in the organic electroluminescent device increase when the device is stored for a long period of time, resulting in a shorter device life.

[0006]

In the organic electroluminescent devices disclosed so far, electroluminescence is brought about by the recombination of holes injected from the anode and electrons injected from the cathode. In general, the injection of carriers is
It must be done by overcoming the injection barrier at the interface between the cathode and the organic light emitting layer. In order to lower the electron injection barrier and improve the injection efficiency, a low work function metal electrode such as magnesium alloy or calcium is used as the cathode. However, since these metal materials have poor adhesion to the organic light emitting layer, the cathode is peeled from the organic light emitting layer, or is oxidized, and the light emitting characteristics of the device are deteriorated during long-term storage, or dark spots are generated. Was a problem. The substrate is heated when the device is manufactured,
Although it is possible to improve the adhesion between the cathode and the organic light-emitting layer by heat treatment after the production, a reaction occurs between the cathode and the organic light-emitting layer during heating, and The decline was unavoidable.

[0007]

In view of the above situation, the present inventors have been able to maintain stable emission characteristics for a long period of time, suppress the generation of dark spots, and improve the adhesion to the cathode. As a result of extensive studies for the purpose of providing an organic electroluminescent element that can withstand heat treatment for, it was found that it is preferable to provide an interface layer containing an organic silicon compound between the organic light emitting layer and the cathode, The present invention has been completed.

That is, the gist of the present invention is an organic electroluminescent device in which an anode, an organic light emitting layer, and a cathode are laminated, and an interface layer containing an organic silicon compound is provided between the organic light emitting layer and the cathode. The present invention resides in an organic electroluminescent device. Hereinafter, the organic electroluminescent device of the present invention will be described with reference to the drawings. FIG. 1 is a cross-sectional view schematically showing a structural example of the organic electroluminescence device of the present invention, in which 1 is a substrate, 2a and 2b.
Represents a conductive layer, 3 represents an organic light emitting layer, and 4 represents an interface layer.

The substrate 1 serves as a support for the organic electroluminescence device of the present invention, and a plate of quartz or glass, a metal plate or metal foil, a plastic film or sheet, etc. is used, but a glass plate or polyester. A transparent synthetic resin substrate such as polymethacrylate, polycarbonate, or polysulfone is preferable. A conductive layer 2a is provided on the substrate 1. The conductive layer 2a is usually aluminum,
Metals such as gold, silver, nickel, palladium, tellurium, metal oxides such as oxides of indium and / or tin, copper iodide, carbon black, and conductive polymers such as poly (3-methylthiophene) It is composed of The conductive layer is usually formed by a sputtering method, a vacuum deposition method or the like, but fine particles of metal such as silver or copper iodide, carbon black, fine particles of conductive metal oxide, fine powder of conductive polymer, etc. In this case, it can also be formed by dispersing it in an appropriate binder resin solution and applying it on a substrate. Further, in the case of a conductive polymer, a thin film can be directly formed on the substrate by electrolytic polymerization or can be formed by coating on the substrate (Appl. Phys. L).
ett. , 60, 2711, 1992). The thickness of the conductive layer 2a varies depending on the required transparency, but when the transparency is required, it is desirable that the visible light transmittance is 60% or more, preferably 80% or more. The thickness is usually 5 to 1000 nm, preferably 1
It is about 0 to 500 nm.

The conductive layer 2a may be the same as the substrate 1 if it is opaque. Further, it is also possible to stack different materials on the above conductive layers. In the example of FIG. 1, the conductive layer 2a plays a role of hole injection as an anode. On the other hand, the conductive layer 2b serves as a cathode to inject electrons into the organic light emitting layer 3 through the interface layer 4. The material used for the conductive layer 2b can be the material for the conductive layer 2a, but a metal having a low work function is preferable for efficient electron injection, and tin, magnesium, indium, aluminum, A suitable metal such as silver or an alloy thereof is used.
The thickness of the conductive layer 2b is usually the same as that of the conductive layer 2a. Although not shown in FIG. 1, a substrate similar to the substrate 1 may be further provided on the conductive layer 2b. However, it is necessary for at least one of the conductive layers 2a and 2b that the electroluminescent element has good transparency. From this, one of the conductive layers 2a and 2b has a thickness of 10 to 500 nm.
It is preferable that the film thickness is, and good transparency is desired.

An organic light emitting layer 3 is provided on the conductive layer 2a. The organic light emitting layer 3 has holes injected from the anode and electrons injected from the cathode between the electrodes to which an electric field is applied. It is formed from a material that efficiently transports and recombines, and that recombination efficiently emits light. Usually, in order to improve the luminous efficiency, the organic light emitting layer 3 is divided into a hole transporting layer 3a and an electron transporting layer 3b so as to have a function separation type (Appl. Phys). . Le
tt. , 51, 913, 1987).

In the above-mentioned function-separated device, the hole transport material has a high hole injection efficiency from the conductive layer 2a,
At the same time, it is necessary that the material is capable of efficiently transporting the injected holes. For that purpose, it is required that the ionization potential is small, the hole mobility is large, the stability is excellent, and the impurities serving as traps are not easily generated during manufacturing or use.

Examples of such hole transport compounds include, for example, JP-A-59-194393, US Pat.
175,960, U.S. Pat. No. 4,923,774 and U.S. Pat. No. 5,047,687, N,
N'-diphenyl-N, N '-(3-methylphenyl)
-1,1'-biphenyl-4,4'-diamine: 1,
Aromatic amine compounds such as 1'-bis (4-di-p-tolylaminophenyl) cyclohexane: 4,4'-bis (diphenylamino) quadrophenyl, JP-A 2-3
The hydrazone compound shown in 11591 gazette, the silazane compound shown by US Patent 4,950,950, a quinacridone compound, etc. are mentioned. These compounds may be used alone or, if necessary, may be mixed and used. In addition to the above compounds, polyvinylcarbazole and polysilane (Appl. Phys. Let)
t. , Vol. 59, page 2760, 1991) and the like.

The organic hole transport material is laminated on the conductive layer 2a by a coating method or a vacuum deposition method to form the hole transport layer 3a. In the case of coating, a coating solution prepared by adding and dissolving one or more organic hole-transporting compounds, if necessary, a binder resin that does not trap holes and a coating property improving agent such as a leveling agent is dissolved. The organic hole transport layer 3 is formed by adjusting, coating the conductive layer 2a on the conductive layer 2a by a method such as spin coating, and drying. Examples of the binder resin include polycarbonate, polyarylate, polyester and the like. The addition amount of the binder resin decreases the hole mobility when it is added in a large amount. Therefore, it is preferable that the addition amount is 50% by weight or less.

In the case of the vacuum deposition method, the organic hole transporting material is placed in a crucible installed in a vacuum container, the interior of the vacuum container is evacuated to 10 ⁻⁶ Torr by an appropriate vacuum pump,
The crucible is heated to evaporate the hole transport material and form a layer on the substrate placed facing the crucible. The thickness of the hole transport layer 3a is usually 10 to 300 nm, preferably 3
It is 0 to 100 nm. In order to uniformly form such a thin film, the vacuum evaporation method is often used.

As the material of the hole transport layer 3a, it is possible to use an inorganic material instead of the organic compound. The conditions required for the inorganic material are the same as those for the organic hole transport compound. The inorganic material used for the hole transport layer 3 is p
Examples thereof include p-type hydrogenated amorphous silicon, p-type hydrogenated amorphous silicon carbide, p-type hydrogenated microcrystalline silicon carbide, p-type zinc sulfide, and p-type zinc selenide. These inorganic hole transport layers are formed by a CVD method, a plasma CVD method, a vacuum deposition method, a sputtering method, or the like.

The thickness of the inorganic hole transporting layer is usually 10 to 300 nm, preferably 30 to 1 like the organic hole transporting layer.
00 nm. The electron transport layer 3 is formed on the hole transport layer 3a.
b is provided, the electron transport layer 3b is formed of a compound capable of efficiently transporting electrons from the cathode toward the hole transport layer between the electrodes to which an electric field is applied.

As the organic electron transport compound, the conductive layer 2b is used.
It is necessary that the compound has a high efficiency of injecting electrons from the compound and can efficiently transport the injected electrons. For that purpose, it is required that the compound has a high electron affinity, a high electron mobility, excellent stability, and an impurity that becomes a trap and is less likely to be generated at the time of production or use.

As a material satisfying such a condition, an aromatic compound such as tetraphenyl butadiene (Japanese Patent Application Laid-Open No. 57-57242)
No. 51781), a metal complex such as an aluminum complex of 8-hydroxyquinoline (JP-A-59-194393).
JP), a cyclopentadiene derivative (JP-A-2-28)
9675), perinone derivatives (JP-A-2-289)
676), oxadiazole derivatives (JP-A-2-
No. 216791), and bisstyrylbenzene derivatives (JP-A Nos. 1-245087 and 2-222484).
No.), perylene derivatives (JP-A-2-189890, JP-A-3-791), coumarin compounds (JP-A-2-191694, JP-A-3-792), and rare earth complexes (JP-A-1-256584). ), Distyrylpyrazine derivative (JP-A-2-252793), p-phenylene compound (JP-A-3-33183), thiadiazolopyridine derivative (JP-A-3-37292), pyrrolopyridine derivative (special Kaihei 3-37293) and naphthyridine derivatives (JP-A-3-203982).
Gazette) and the like. The organic electron transporting layer using these compounds plays a role of transporting electrons and a role of causing light emission upon recombination of holes and electrons, and also serves as a light emitting layer.

When the organic hole transport compound has a light emitting function, the organic electron transport layer serves only to transport electrons. For the purpose of improving the luminous efficiency of the device and changing the luminescent color, for example, by doping an aluminum complex of 8-hydroxyquinoline as a host material with a fluorescent dye for laser such as coumarin (J. Appl. Phys.,
65, 3610, 1989). Also in the present invention, the emission characteristics of the device can be further improved by doping the above-mentioned organic electron transport material as a host material with various fluorescent dyes at 10 ⁻³ to 10 mol%. The thickness of the electron transport layer 3b is usually 10 to 200 n.
m, preferably 30 to 100 nm.

The organic electron transport layer can also be formed by the same method as that for the organic hole transport layer, but the vacuum deposition method is usually used. As a method for further improving the luminous efficiency of the organic electroluminescent device, it is conceivable to stack another electron transport layer 3c on the electron transport layer 3b (see FIG. 3).
The compound used for the electron transport layer 3c is required to be capable of easily injecting electrons from the cathode and have a higher electron transport capability. As such an electron transport material,

[0022]

[Chemical 1]

[0023]

[Chemical 2]

Oxadiazole derivatives such as (Appl.
Phys. Lett. , 55, 1489, 1989
Year; Jpn. J. Appl. Phys. , Volume 31, 18
P. 12, 1992) or a system in which they are dispersed in a resin such as polymethylmethacrylate (Appl. Phys. Le.
tt. , 61, 2793, 1992), or n
Examples include hydrogenated amorphous silicon carbide, n-type zinc sulfide, and n-type zinc selenide. The thickness of the electron transport layer 3c is usually 5 to 200 nm, preferably 10 to 100 nm.

As the single-layer type organic light emitting layer 3 which does not perform the function separation, the above-mentioned poly (p-phenylene vinylene) (Nature, 347, 539, 1990) is used.
Year; Appl. Phys. Lett. , Volume 61, 279
P. 3, 1992), poly [2-methoxy, 5- (2 '
-Ethylhexoxy) -1,4-phenylene vinylene]
(Appl. Phys. Lett., 58, 1982.
P., 1991; Thin Solid Films,
216, 96, 1992; Nature, 357.
Vol., 477, 1992), poly (3-alkylthiophene) (Jpn. J. Appl. Phys, vol. 30,
L 1938, 1991; Appl. Phy
s. , Vol. 72, p. 564, 1992), or a system in which a light emitting material and an electron transfer material are mixed with a polymer such as polyvinylcarbazole (Applied Physics, 61, 1044).
Page, 1992).

An interface layer 4 is provided on the organic light emitting layer.
The role of the interface layer is that it has an affinity with the organic light-emitting layer and at the same time has good adhesion to the cathode, and is chemically stable to allow the reaction between the organic light-emitting layer and the cathode during and / or after formation of the cathode. It has a suppressing effect. It is also important to provide a uniform thin film shape from the viewpoint of adhesion with the cathode. The present inventors have found that an organic silicon compound is suitable as a material that plays such a role.

The interface layer made of an organic silicon compound is formed by a coating method or a vacuum vapor deposition method, like the organic hole transporting material described above. In the present invention, as described above, excellent device stability is achieved by using an organic silicon compound as an interface layer material between the organic light emitting layer and the cathode in the organic electroluminescent device.

As the organic silicon compound used for the interface layer, any organic silicon compound containing a silicon atom can be used, but preferably an aromatic silicon compound containing an aromatic silicon compound,
Further, it is an organic silicon compound in which an aromatic ring is bonded to a silicon atom. Specific examples are the following structural formulas (1) to (8)
However, the present invention is not limited to these.

[0029]

[Chemical 3]

[0030]

[Chemical 4]

When the organic silicon compound shown above is formed as the interface layer, these compounds may be further mixed and used. The organic electroluminescent device of the present invention having an interface layer made of an organic silicon compound may have the following layer structure.

[0032]

[Table 1] Anode / organic light-emitting layer / interface layer / cathode, anode / polymer organic light-emitting layer / interface layer / cathode, anode / polymer dispersed organic light-emitting layer / interface layer / cathode, anode / positive Pore transport layer / organic electron transport light emitting layer / interface layer / cathode, anode / organic hole transport light emitting layer / organic electron transport layer / interface layer / cathode, anode / hole transport layer / organic electron transport light emitting layer / The thickness of the electron transport layer / interface layer / cathode and interface layer 4 is usually 2 to 100 nm, preferably 5 to 30 nm.

In each of the above layer structures, an organic silicon compound is added as an interface layer in the vicinity of the cathode interface of the organic light emitting layer, the organic electron transporting light emitting layer, the organic electron transporting layer or the electron transporting layer.
A region (layer) containing at least mol% may be provided. In the present invention, 50 mol% of an organic silicon compound is used as an interface layer between the organic light emitting layer and the cathode in the organic electroluminescent device.
By providing the above-described layers, excellent device stability is achieved.

Incidentally, it is also possible to have a structure opposite to that of FIG. 1, that is, the conductive layer 2b, the interface layer 4, the organic light emitting layer 3 and the conductive layer 2a are laminated in this order on the substrate, and at least as described above. It is also possible to provide the organic electroluminescent element of the present invention between two substrates, one of which is highly transparent. Similarly, it is also possible to stack in a structure opposite to that of FIGS.

[0035]

EXAMPLES Next, the present invention will be described in more detail by way of examples, but the present invention is not limited to the following examples unless it exceeds the gist thereof. Examples 1 and 1 ′ Organic electroluminescent devices having the structure shown in FIG. 2 were produced by the following method.

A glass substrate on which a transparent conductive film of indium tin oxide (ITO) is deposited to a thickness of 120 nm is ultrasonically washed with acetone, washed with pure water, ultrasonically washed with isopropyl alcohol, dried with dry nitrogen, and UV / ozone. After the cleaning, it was installed in a vacuum vapor deposition apparatus and evacuated using an oil diffusion pump until the degree of vacuum in the apparatus became 2 × 10 ⁻⁶ Torr or less.

As the organic hole transport layer material, N, N'-diphenyl-N, N '-(3 represented by the following structural formula (H1) is used.
-Methylphenyl) -1,1'-biphenyl-4,4 '
-Diamine

[0038]

[Chemical 5]

[0039] was placed in a ceramic crucible and heated by a tantalum wire heater around the crucible for vapor deposition. The temperature of the crucible at this time was controlled in the range of 160 to 170 ° C. The degree of vacuum during vapor deposition was 2 × 10 ⁻⁶ Torr, and an organic hole transport layer 3a having a film thickness of 60 nm was obtained with a vapor deposition time of 3 minutes and 20 seconds. Then, as the material of the organic electron-transporting layer 3b, the aluminum shown in the following structural formulas (E1) 8- hydroxyquinoline complex _{Al (C 9 H 6 NO)} 3

[0040]

[Chemical 6]

The above was vapor-deposited on the organic hole transport layer 3a in the same manner. The temperature of the crucible at this time is 230-2
The temperature was controlled in the range of 70 ° C. The degree of vacuum during vapor deposition is 2 × 10 ^-6
Torr, vapor deposition time was 3 minutes and 30 seconds, and film thickness was 75 nm. This layer serves as a light emitting layer. Next, as the interface layer 4, the above-mentioned organosilicon compound (1) is formed on the organic electron-transporting light-emitting layer 3b and the organic hole-transporting layer 3a.
Vapor deposition was performed in the same manner as in. The degree of vacuum during vapor deposition is 1 x 10
^-6 Torr, vapor deposition time was 30 seconds, and film thickness was 5 nm.

Finally, as a cathode, a combination of magnesium and silver
Gold electrode is vapor-deposited with a film thickness of 150 nm by the two-source simultaneous vapor deposition method.
did. Vapor deposition uses a molybdenum boat and the degree of vacuum is 3 ×
10 ^-6Torr, vapor deposition time is 4 minutes and 30 seconds, and it is a glossy film.
was gotten. The atomic ratio of magnesium to silver is 10: 1.5.
(Example 1). Further organosilicon compounds
Using (1), the film thickness of the interface layer 4 was set to 10 nm.
An element was manufactured in the same manner as described above except for (Example
1 ').

When a positive DC voltage was applied to the ITO electrode (anode) of the organic electroluminescent element thus manufactured and a negative DC voltage was applied to the magnesium-silver alloy electrode (cathode) of this element, the element was of uniform yellow-green color. It emitted light and had a peak wavelength of 560 nm. Table 1 shows the results of the light emission characteristics immediately after production and after storage in vacuum for a long time. Stable emission characteristics were obtained respectively.

Comparative Example 1 An organic electroluminescent device having the structure shown in FIG. 2 was prepared in the same manner as in Example 1 except that the interface layer 4 was not provided. Table 1 shows the measurement results of the emission characteristics of this device after it was manufactured and after it was stored in vacuum. The emission brightness and efficiency decreased, and the driving voltage increased.

Example 2 As the interface layer 4, the above-mentioned organosilicon compound (1) was used.
An organic electroluminescent device having a structure shown in FIG. 2 was produced in the same manner as in Example 1 except that a film having a thickness of 5 nm in which the organic silicon compound (2) and the organic silicon compound (2) were mixed at a ratio of 7: 3 (weight ratio) was provided. Table 1 shows the measurement results of the emission characteristics of this device after it was manufactured and after it was stored in vacuum. Stable light emission characteristics were obtained.

[0046]

[Table 2]

Example 3 As the interface layer 4, the above-mentioned organosilicon compound (4) was used.
An organic electroluminescent device having the structure shown in FIG. 2 was produced in the same manner as in Example 1 except that the film having a thickness of 15 nm was provided.
After this device was stored in a vacuum for 119 days, the light emission from the device was photographed with a CCD camera, and the area of the dark spot was measured by image analysis and found to be 13%.

Comparative Example 2 The element prepared in the same manner as in Comparative Example 1 was stored in vacuum for 80 days, and then the dark spot area was measured in the same manner as in Example 3 to find that it was 53%. Example 4 A quinacridone compound represented by the following structural formula (H2) as the organic hole transport layer 3a

[0049]

[Chemical 7]

An organic electroluminescent device having the structure shown in FIG. 2 was prepared in the same manner as in Example 1 except that the organic silicon compound (4) shown above was provided as the interface layer 4 in a thickness of 15 nm. did. FIG. 4 shows the luminance-voltage characteristics after heat-treating this device in vacuum at 100 ° C. for 1 hour together with the characteristics before heat-treatment. By the heat treatment, the driving voltage could be lowered as compared to before the heat treatment.

Comparative Example 3 An element manufactured in the same manner as in Comparative Example 1 is heat-treated in the same manner as in Example 4, and the luminance-voltage characteristics thereof are shown in FIG. By the heat treatment, the driving voltage was shifted to a higher voltage side than before the heat treatment. Example 5 After depositing the organosilicon compound (1) shown in Table 1 in a film thickness of 100 nm on a glass substrate, a magnesium-silver alloy electrode was formed by a binary simultaneous vapor deposition method in the same manner as in Example 1. It vapor-deposited in a 2 mm x 20 mm strip shape with a film thickness of 150 nm using a contact mask. When a peeling test of the electrode was conducted using a Scotch tape, the thin film of the organic silicon compound was peeled from the glass substrate together with the electrode, and the adhesive force with the metal electrode was good.

Comparative Example 4 A sample for an electrode peeling test was prepared in the same manner as in Example 5 except that the aluminum 8-hydroxyquinoline complex (E1) was used instead of the organosilicon compound (1). When a peeling test of the above electrode was conducted using Scotch tape, the electrode peeled from the organic layer and the adhesion was poor.

[0053]

In the organic electroluminescent device of the present invention, an anode, an organic light emitting layer and a cathode are sequentially provided on a substrate, and an interface layer containing a specific compound is provided between the organic light emitting layer and the cathode. Therefore, when voltage is applied with both conductive layers as electrodes,
Stable light emission characteristics can be obtained over a long period of time.

Therefore, the electroluminescent device of the present invention is used in the field of flat panel displays (for example, for OA computers and wall-mounted televisions) and light sources (for example, light sources for copiers, liquid crystal displays and instruments) that make the most of the characteristics as a surface light emitter. It can be applied to various types of backlight sources, display boards, and marker lights, and its technical value is extremely large.

[Brief description of drawings]

FIG. 1 is a schematic cross-sectional view showing an example of an organic electroluminescence device of the present invention.

FIG. 2 is a schematic cross-sectional view showing another embodiment of the organic electroluminescent element of the present invention.

FIG. 3 is a schematic cross-sectional view showing another embodiment of the organic electroluminescent element of the present invention.

FIG. 4 is a diagram showing changes in light emission luminance-voltage characteristics of an organic electroluminescence device manufactured in Example 4 of the present invention due to heat treatment.

FIG. 5 is a diagram showing changes in light emission luminance-voltage characteristics of an organic electroluminescence device manufactured in Comparative Example 3 of the present invention due to heat treatment.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 Substrate 2a, 2b Conductive layer 3 Organic light emitting layer 3a Hole transport layer 3b Organic electron transport layer 3c Organic electron transport layer composed of a compound different from 3b 4 Interface layer

Claims (1)

[Claims] 1. An organic electroluminescent device in which an anode, an organic light emitting layer, and a cathode are sequentially stacked, wherein an organic electroluminescent device-containing interface layer is provided between the organic light emitting layer and the cathode. Electroluminescent device.