JPH077806B2 - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPH077806B2 JPH077806B2 JP62031022A JP3102287A JPH077806B2 JP H077806 B2 JPH077806 B2 JP H077806B2 JP 62031022 A JP62031022 A JP 62031022A JP 3102287 A JP3102287 A JP 3102287A JP H077806 B2 JPH077806 B2 JP H077806B2
- Authority
- JP
- Japan
- Prior art keywords
- fuse
- insulating film
- polysilicon
- redundant circuit
- view
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は冗長回路を有する半導体集積回路（以下LSIと
いう）に関し、特に不良の回路と冗長回路を置換を決定
するヒューズの形状に関する。Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor integrated circuit (hereinafter referred to as an LSI) having a redundant circuit, and more particularly to a shape of a fuse that determines replacement of a defective circuit and a redundant circuit.
〔従来の技術〕 従来、この種のヒューズは、第４図（ａ），（ｂ）の様
な構造になっていた。このヒューズ１は通常ポリシリコ
ンで形成されるが、それは他の内部配線用ポリシリコン
と同じものを用いるため、必要以上に厚くなっていた。
この例の構成は、半導体基板７上に絶縁膜６が形成さ
れ、この絶縁膜６の上にヒューズ１が形成される。これ
らヒューズ１と絶縁膜６上にパッシベーション膜５が最
上面に一様に成長される。[Prior Art] Conventionally, this type of fuse has a structure as shown in FIGS. 4 (a) and 4 (b). The fuse 1 is usually made of polysilicon, but since it is the same as the other polysilicon for internal wiring, it is thicker than necessary.
In the configuration of this example, the insulating film 6 is formed on the semiconductor substrate 7, and the fuse 1 is formed on the insulating film 6. The passivation film 5 is uniformly grown on the uppermost surface of the fuse 1 and the insulating film 6.
上述した従来のヒューズは、内部配線と同時に形成され
るので必要以上に厚い構造となっていた。一方、ヒュー
ズ１を切断するにはレーザ光を当て溶断させて行うが、
ヒューズ１であるポリシリコンが厚いため、切断しきれ
なかったり、１度溶けたポリシリコンが、ポリシリコン
を被うパッシベーションの側面に再固着し切断不良とな
るという欠点がある。The above-described conventional fuse is formed at the same time as the internal wiring, and thus has a thicker structure than necessary. On the other hand, the fuse 1 is cut by applying a laser beam to blow it,
Since the fuse 1, which is polysilicon, is thick, it cannot be completely cut, and once melted, polysilicon is fixed again on the side surface of the passivation covering the polysilicon, resulting in defective cutting.
例えば、第５図（ａ），（ｂ）に示す様に、切断後も１
部のポリシリコン10が連なっている不良が発生する。For example, as shown in FIGS. 5 (a) and 5 (b), 1
A defect in which some of the polysilicon 10 is connected occurs.
レーザ光照射部８に対し、エネルギはポリシリコン１に
吸収され気化し、空洞９が出来る。この時、側面のパッ
シベーション膜５を破壊する力がなく１部は再固着した
ポリシリコン10となる。Energy is absorbed by the polysilicon 1 into the laser light irradiation portion 8 and vaporized, and a cavity 9 is formed. At this time, there is no force to destroy the passivation film 5 on the side surface, and a part becomes the re-fixed polysilicon 10.
本発明の目的は、このような欠点を除き、ヒューズの切
断不良をなくした半導体装置を提供することにある。An object of the present invention is to provide a semiconductor device that eliminates such a defect and eliminates a fuse disconnection failure.
本発明の構成は、冗長回路と、この冗長回路と接続され
その選択をレーザ光の照射による切断により行うヒュー
ズと、これら冗長回路およびヒューズを覆うパッシベー
ション膜とを備えた半導体装置において、前記ヒューズ
の下地の絶縁膜がその周囲の絶縁膜の厚さよりも厚く形
成され、この絶縁膜に厚さがあることにより前記ヒュー
ズの側面となる前記パッシベーション膜が薄く形成され
たものであることを特徴とする。According to the configuration of the present invention, in a semiconductor device including a redundant circuit, a fuse connected to the redundant circuit and performing selection thereof by cutting with irradiation of laser light, and a passivation film covering the redundant circuit and the fuse, The underlying insulating film is formed thicker than the surrounding insulating film, and the thickness of this insulating film causes the passivation film, which is the side surface of the fuse, to be formed thin. .
次に本発明について図面を用いて説明する。 Next, the present invention will be described with reference to the drawings.
第１図（ａ），（ｂ）は本発明の一実施例の平面図およ
びそのＡ−Ａ′線の断面図である。本実施例では、ポリ
シリコンヒューズ１が、その周辺の絶縁膜６より厚い絶
縁膜２上に形成されている。1 (a) and 1 (b) are a plan view and a cross-sectional view taken along the line AA 'of one embodiment of the present invention. In this embodiment, the polysilicon fuse 1 is formed on the insulating film 2 which is thicker than the insulating film 6 around it.
このヒューズ１は内部回路と接続する金属配線３とスル
ーホール４を遠して接続されている。また、絶縁膜６は
半導体基板７上に形成され、その最上面はパッシベーシ
ョン膜５によって被われている。ヒューズ１の側面のパ
ッシベーション膜５は従来のヒューズに比べて薄くなっ
ている。The fuse 1 is connected to the metal wiring 3 connected to the internal circuit and the through hole 4 away from each other. The insulating film 6 is formed on the semiconductor substrate 7, and the uppermost surface thereof is covered with the passivation film 5. The passivation film 5 on the side surface of the fuse 1 is thinner than the conventional fuse.
第２図（ａ），（ｂ）は本実施例にレーザ光を照射した
場合の平面図およびそのＡ−Ａ′断面図である。レーザ
光がヒューズ１の照射部８の様に当るとそのエネルギは
ポリシリコンヒューズ１に吸収され、開孔９を残してヒ
ューズが切断される。この時、ヒューズ１の側面のパッ
シベーション膜５も十分に破壊されるのでポリシリコン
による再固着を発生することはない。2 (a) and 2 (b) are a plan view and a cross-sectional view taken along the line AA 'in the case where a laser beam is applied to this embodiment. When the laser light strikes the irradiation portion 8 of the fuse 1, the energy is absorbed by the polysilicon fuse 1 and the fuse is cut off leaving an opening 9. At this time, the passivation film 5 on the side surface of the fuse 1 is also sufficiently destroyed, so that re-sticking due to polysilicon does not occur.
第３図（ａ），（ｂ）は本発明の第２の実施例の平面図
およびそのＡ−Ａ′断面図である。第１の実施例は、ヒ
ューズ１下層の絶縁膜６が周囲より厚い必要があった
が、この実施例では切断するヒューズの部分の側面につ
いて絶縁膜６の薄い部分11を設けたものである。3 (a) and 3 (b) are a plan view and a sectional view taken along the line AA 'of the second embodiment of the present invention. In the first embodiment, the insulating film 6 under the fuse 1 needs to be thicker than the surroundings, but in this embodiment, the thin portion 11 of the insulating film 6 is provided on the side surface of the fuse portion to be cut.
本実施例は、第１の実施例と同様に、ヒューズの切断不
良をなくすと共に、拡散、リソグラフィーの工程がヒュ
ーズを必要としない品種と同じ工程で製造できるという
特徴もある。Similar to the first embodiment, the present embodiment is characterized in that a defective cutting of the fuse can be eliminated, and the diffusion and lithography processes can be performed in the same process as that of the type that does not require the fuse.
以上説明した様に、本発明はヒューズの下の絶縁物を厚
くする事により、ヒューズの切断不良をなくし、信頼性
の高い半導体装置が得られる。As described above, according to the present invention, by thickening the insulating material under the fuse, defective cutting of the fuse can be eliminated and a highly reliable semiconductor device can be obtained.
第１図（ａ），（ｂ）は本発明の一実施例のヒューズ部
分の平面図およびそのＡ−Ａ′断面図、第２図（ａ），
（ｂ）は第１図のヒューズ切断時の平面図およびそのＡ
−Ａ′断面図、第３図（ａ），（ｂ）は本発明の第２の
実施例のヒューズ部分平面図およびそのＡ−Ａ′断面
図、第４図（ａ），（ｂ）は従来のヒューズ部分の一例
の平面図およびそのＡ−Ａ′断面図、第５図（ａ），
（ｂ）は第４図のヒューズの切断時の平面図およびその
Ａ−Ａ′断面図である。 １……ポリシリコンヒューズ、２……厚い絶縁膜部分、
３……金属配線、４……スルーホール、５……パッシベ
ーション膜、６……絶縁膜、７……半導体基板、８……
レーザ光照射部分、９……開孔部、10……ポリシリコ
ン、11……薄い絶縁膜部分。1 (a) and 1 (b) are a plan view and a sectional view taken along the line AA 'of the fuse portion of one embodiment of the present invention, and FIGS.
(B) is a plan view of the fuse of FIG.
-A 'sectional view, FIGS. 3 (a) and 3 (b) are partial plan views of the fuse of the second embodiment of the present invention and its AA' sectional view, and FIGS. 4 (a) and 4 (b) are A plan view of an example of a conventional fuse portion and a cross-sectional view taken along the line AA ′, FIG.
(B) is a plan view and a sectional view taken along the line AA 'of the fuse shown in FIG. 1 ... Polysilicon fuse, 2 ... Thick insulating film part,
3 ... Metal wiring, 4 ... Through hole, 5 ... Passivation film, 6 ... Insulating film, 7 ... Semiconductor substrate, 8 ...
Laser light irradiation part, 9 ... Opening part, 10 ... Polysilicon, 11 ... Thin insulating film part.
Claims (1)
選択をレーザ光の照射による切断により行うヒューズ
と、これら冗長回路およびヒューズを覆うパッシベーシ
ョン膜とを備えた半導体装置において、前記ヒューズの
下地の絶縁膜がその周囲の絶縁膜の厚さよりも厚く形成
され、この絶縁膜に厚さがあることにより前記ヒューズ
の側面となる前記パッシベーション膜が薄く形成された
ものであることを特徴とする半導体装置。1. A semiconductor device comprising: a redundant circuit; a fuse connected to the redundant circuit for selecting the redundant circuit by irradiation with laser light; and a passivation film covering the redundant circuit and the fuse. Is formed thicker than the thickness of the surrounding insulating film, and the thickness of this insulating film results in the passivation film forming the side surface of the fuse being formed thin. apparatus.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62031022A JPH077806B2 (en) | 1987-02-13 | 1987-02-13 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62031022A JPH077806B2 (en) | 1987-02-13 | 1987-02-13 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63198354A JPS63198354A (en) | 1988-08-17 |
| JPH077806B2 true JPH077806B2 (en) | 1995-01-30 |
Family
ID=12319890
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62031022A Expired - Lifetime JPH077806B2 (en) | 1987-02-13 | 1987-02-13 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH077806B2 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3150113B2 (en) | 1998-11-11 | 2001-03-26 | 日本電気アイシーマイコンシステム株式会社 | Semiconductor storage device |
| US6380838B1 (en) * | 1999-06-07 | 2002-04-30 | Nec Corporation | Semiconductor device with repair fuses and laser trimming method used therefor |
| JP4716945B2 (en) * | 2006-07-20 | 2011-07-06 | 三菱電機株式会社 | Electric motor |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2625089A1 (en) * | 1976-06-04 | 1977-12-15 | Bosch Gmbh Robert | ARRANGEMENT FOR SEPARATING CONDUCTOR TRACKS ON INTEGRATED CIRCUITS |
| JPS62162344A (en) * | 1986-01-10 | 1987-07-18 | Sanyo Electric Co Ltd | Semiconductor device |
-
1987
- 1987-02-13 JP JP62031022A patent/JPH077806B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63198354A (en) | 1988-08-17 |
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