JPH0772473A - Color liquid crystal display device - Google Patents

Abstract

PURPOSE:To prevent the drop of the effective voltage to be impressed to liquid crystals by improving the pixel electrode arrangement in an on-chip color filter structure. CONSTITUTION:This color liquid crystal display device has a panel structure consisting of a pair of main substrate 0 and counter substrate 11 and a liquid crystal layer 13 interposed between both. Switching elements consisting of the pixel electrodes 9, color filters 7 and TFTs are formed on the main substrate 0. A counter electrode 10 is formed on the counter substrate 11. The color filters 7 consist of electropeposited films deposited on patterned ground surface electrode 6 electrically connected to the TFTs. The pixel electrodes 9 consist of transparent conductive films which are likewise electrically connected to the TFTs and are patterned and formed on the color filters 7. In addition, the color filters 7 are segmented to every three primary colors and are arranged in a matrix form. Black masks 8 are formed approximately at the same thickness between the blocks.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a color liquid crystal display device. More specifically, the present invention relates to an active matrix type color liquid crystal display device in which pixel electrodes, switching elements, color filters and the like are integrally formed on the same substrate. More specifically, it relates to a technique for forming a color filter.

[0002]

2. Description of the Related Art First, in order to clarify the background of the present invention, a general structure of an active matrix type liquid crystal display device will be briefly described with reference to FIG. The active matrix type liquid crystal display device has pixel electrodes 101 arranged in a matrix. A thin film transistor (TFT) 1 is used as a switching element for driving each pixel electrode 101.
02 is also formed. Between each row of pixel electrodes 101,
A gate line 103 for selecting a TFT for each row is arranged, and a signal line 104 for supplying an image signal is arranged between each column of the pixel electrodes 101. Thin film transistor 1
The drain of 02 is connected to the corresponding pixel electrode 101, the source is connected to the signal line 104, and the gate is connected to the gate line 103. In addition, a storage capacitor 106 having a gate insulating film as a dielectric film is formed in the extension of the drain region. The thin film transistor 10
2 gate, gate line 103, storage capacitor line 10
Reference numeral 5 is formed at the same time, and is made of, for example, an impurity-doped polycrystalline silicon film.

FIG. 11 shows another conventional structure of an active matrix type liquid crystal display device. Also in this active matrix type liquid crystal display device, the pixel electrodes 201 are arranged in a matrix. In this conventional example, the MIM diode 202 is used as a switching element which drives each pixel electrode 201. A signal line 204 for supplying an image signal is arranged between each column of the pixel electrodes 201. One terminal of the MIM diode 202 is connected to the corresponding pixel electrode 201, and the other terminal is connected to the signal line 204. These MIM diodes 20
Address lines 203 are arranged on the counter substrate facing the main substrate on which the pixel electrodes 201 and the pixel electrodes 201 are formed. The address line 203 is orthogonal to the signal line 204.

In order to colorize the above-mentioned active matrix type liquid crystal display device, it is necessary to use RGB for each pixel electrode.
It is necessary to form color filters of three primary colors. 12
FIG. 6 is a schematic cross-sectional view showing a conventional structure of a colorized active matrix type liquid crystal display device. Main board 301
A top gate type TFT 302 is formed as a switching element on the inner surface of the pixel, and a pixel electrode 303 is connected to the drain D thereof. A signal electrode 304 is connected to the source of the TFT 302. This main board 301
The counter substrate 305 is bonded to the substrate via a predetermined gap. A color filter 306 is formed on the inner surface of the counter substrate 305 in alignment with the pixel electrode 303. Also TFT
A black mask 307 is formed so as to block 302. A counter electrode 308 is entirely formed on the color filters 306 and the black mask 307. A liquid crystal layer 309 having, for example, a twisted nematic orientation is held between the counter substrate 305 and the main substrate 301. In this conventional example, a top gate TFT is used as a switching element and a color filter is formed on the counter substrate side.

FIG. 13 is a schematic sectional view showing another conventional example. Basically, it has the same structure as the conventional example shown in FIG. 12, and corresponding parts are given corresponding reference numerals to facilitate understanding. The difference is that a bottom gate TFT 312 is used as the switching element instead of the top gate TFT. Color filter 306
Is formed on the counter substrate 305 side as in the conventional example of FIG.

FIG. 14 is a schematic sectional view showing still another conventional example. The basic structure is the same as that of the conventional example shown in FIG. 12, and corresponding parts are designated by corresponding reference numerals for easy understanding. The difference is that the MIM diode 322 is used as a switching element.
In connection with this, signal lines 324 arranged in rows are patterned on the main substrate 301. In addition, the counter substrate 32 has a counter electrode 32 that constitutes an address line.
8 is formed in a stripe pattern. Also in this conventional example, the color filter 306 is provided on the counter substrate side.

FIG. 15 shows another conventional example in which a color filter is formed on the main substrate side, unlike the three conventional examples described above. Such a structure is called an on-chip color filter. A bottom gate type TFT is used as a switching element, and the basic configuration is the same as that of the conventional example shown in FIG. 13, and corresponding parts are designated by corresponding reference numerals to facilitate understanding. is there. In this conventional example, a color filter 306 is provided in alignment with the pixel electrode 303. The on-chip color filter 306 is formed by the electrodeposition method. Also, the bottom gate type TFT3
A black mask 307 is formed so as to block 12 and the signal line 304.

FIG. 16 is a schematic sectional view showing another conventional example of an on-chip color filter. A MIM diode is used as a switching element, and the basic configuration is the same as the prior art example shown in FIG. 14, and corresponding parts are designated by corresponding reference numerals for easy understanding. Also in this conventional example, the color filter 306 is formed on the pixel electrode 303 in alignment with the electrodeposition method. A black mask 307 is formed so as to block off the MIM diode 322 and the signal line 324.
As described above, the conventional example of the on-chip color filter by the electrodeposition method shown in FIGS.
520, JP-A-63-55523, JP-A-2-81025 and the like.

[0009]

In the conventional example shown in FIGS. 12, 13 and 14, a color filter and a black mask are formed on the counter substrate side. Therefore, there is a problem that the pixel aperture ratio greatly changes depending on the alignment accuracy with the pixel electrode provided on the main substrate side.
Further, the aperture ratio is influenced by the flatness and dimensional accuracy of the color filter, the flatness of the main substrate on which the switching element is formed, and the like. As the active matrix type liquid crystal display device becomes finer, the aperture ratio becomes stricter. Therefore, it is necessary to avoid the sacrifice of the aperture ratio due to factors other than pattern accuracy as much as possible. However, when the color filter is formed on the counter substrate side, there is a problem that the cost becomes very high because a fine color filter having good flatness and dimensional accuracy is manufactured.

On the other hand, in the conventional example of the on-chip color filter shown in FIGS. 15 and 16, 1.
Since a color filter, which is an insulator of about 5 μm, is formed by electrodeposition, a drive voltage must be applied to the liquid crystal layer via this insulator. Therefore, the effective voltage applied to the liquid crystal layer becomes low, and problems remain in terms of contrast and power consumption.

[0011]

SUMMARY OF THE INVENTION In view of the above-mentioned problems of the prior art, it is an object of the present invention to provide an on-chip color filter structure that does not require alignment without lowering contrast and increasing power consumption. To do. Another object of the present invention is to provide a color filter that is low in cost and excellent in flatness and dimensional accuracy and improve the aperture ratio of a high resolution and high definition active matrix type liquid crystal display device. The following measures have been taken in order to achieve this object. That is, the color liquid crystal display device according to the present invention basically has a panel structure including a pair of main substrate and counter substrate, and a liquid crystal layer interposed therebetween. Pixel electrodes, color filters and switching elements are formed on the main substrate, and counter electrodes are formed on the counter substrate. As a feature of the present invention, the color filter is composed of an electrodeposition film deposited on a patterned base electrode which is electrically connected to each switching element, and the pixel electrode is also electrically connected to each switching element. The transparent conductive film is patterned on the film.
Preferably, the color filters are divided into three primary colors and are arranged in a matrix, and a black mask is formed between the divisions with substantially the same thickness. The switching elements include a top gate TFT and a bottom gate TF.
It is possible to use T, MIM diode, or the like.

The color liquid crystal display device having such a structure is manufactured by the following manufacturing method. First, in the first step, wiring and switching elements are integratedly formed on the main substrate. In the second step, a base electrode electrically connected to each switching element via a contact is patterned. In the third step, the surface of the main substrate is covered with a resist except for the base electrode. In the fourth step, the exposed base electrode is energized through the switching element to selectively electrodeposit the three primary color filters. In the fifth step, after removing the resist, the pixel electrode is patterned on the color filter so as to be electrically connected to the switching element through the contact. Finally, in a sixth step, the counter substrate is bonded to the main substrate via a predetermined gap, and the liquid crystal is sealed in the gap. Preferably, the method includes a step of forming a black mask by a backside exposure method between the color filters arranged in a matrix.

[0013]

According to the present invention, unlike the conventional on-chip color filter structure, the base electrode is formed in advance and the color filter is provided by electrodeposition using this. Pixel electrodes are formed in alignment with the color filters. Therefore,
The pixel electrode can be in direct contact with the liquid crystal layer, and the effective driving voltage can be prevented from lowering. Moreover, the color filter using the electrodeposition method is excellent in flatness and dimensional accuracy. Further, the production of the color filter by the electrodeposition method is low cost. By using this electrodeposition method to fabricate a color filter under the pixel electrode, the main substrate can be planarized. In addition, the on-chip color filter and the on-chip black mask can be simultaneously realized at low cost without adversely affecting the contrast and power consumption.

[0014]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Preferred embodiments of the present invention will be described in detail below with reference to the drawings. FIG. 1 is a schematic partial sectional view showing a first embodiment of a color liquid crystal display device according to the present invention. A polycrystalline silicon film (or amorphous silicon film) 1 is formed on a main substrate 0 made of an insulating material such as glass or quartz.
Are patterned in a predetermined shape. A top gate type TFT using this polycrystalline silicon film 1 as an element region
Are formed to function as a switching element. A gate electrode 3 is formed on the polycrystalline silicon film 1 with a gate insulating film 2 interposed therebetween. At the same time, a gate line and a storage capacitor line (not shown) are also formed. PSG on it
An interlayer insulating film 4 made of, for example, and a signal line 5 made of a conductive thin film such as aluminum are formed in this order. On the other hand, in the pixel region, a base electrode 6 is formed in a predetermined shape by being electrically connected to the drain D of the TFT. The base electrode 6 is composed of a transparent conductive thin film such as ITO. A color filter 7 made of an electrodeposition film is formed in alignment with the base electrode 6. Further, a black mask 8 is formed on a portion other than the color filter 7. The surfaces of the black mask 8 and the color filter 7 are at substantially the same level, and the main substrate 0 is flattened. Finally, the pixel electrode 9 is formed so as to match the color filter 7. This pixel electrode 9 is connected to the drain D of the TFT through the contact.
Electrically connected to. Like the base electrode 6, the pixel electrode 9 is made of a transparent conductive thin film such as ITO.

On the other hand, the counter substrate 11 facing the main substrate 0 with a predetermined gap therebetween is made of an insulating material such as glass. IT is entirely formed on the inner surface of the counter substrate.
A counter electrode 10 made of O or the like is formed. An alignment film 12 of polyimide or the like is applied to the surface of the counter electrode 10,
It has been subjected to a predetermined orientation treatment. An alignment film 12 is similarly formed on the inner surface of the main substrate 0. Counter substrate 1
A liquid crystal layer 13 having, for example, a twisted nematic orientation is enclosed in a gap between 1 and the main substrate 0 to form an active matrix type color liquid crystal display device.

Next, a method of manufacturing the color liquid crystal display device shown in FIG. 1 will be described in detail with reference to FIGS. First, in step A of FIG. 2, T is formed on a main substrate (not shown).
The FT, the signal line 5, the base electrode 6 and the like are integrally formed by a semiconductor process. Then, the portion other than the base electrode 6 is covered with the resist 14. The drain side contact CON of the TFT is also included in this covered region. Next, in step B, the signal line 5 corresponding to the green (G) pixel is electrically selected and subjected to the electrodeposition process to form the color filter 7 made of a green electrodeposition film in alignment with the base electrode 6. It In this electrodeposition treatment, the object to be coated was immersed in a bath containing a green colored electrodeposition bath solution, and a direct current was applied between the electrode plate and the counter electrode under appropriate conditions to color the object to be coated. The electrodeposition film is formed. The electrodeposited film once formed loses its conductivity by prebaking. The electrodeposition bath liquid is an aqueous solution or an aqueous dispersion of a polymer resin in which a color pigment is dispersed, and for example, an anion type in which a polyester resin having a carboxyl group is neutralized with an organic amine can be used. In addition, an organic pigment is used as a coloring material, and the quality of the color filter is ensured by precise dispersion.

Next, in step C, the signal line corresponding to the red (R) pixel is electrically selected and immersed in the red electrodeposition liquid to form the red color filter 7. At this time,
Since the previously formed green electrodeposition film has lost its conductivity due to the pre-baking, there is no fear that the red electrodeposition film may be deposited in a pile. Similarly, an electrodeposition film colored blue (B) is also formed in the corresponding pixel region. The main firing is performed when the color filters of the three primary colors of RGB are all formed. Next, in step D, the used resist 14 is peeled off,
The contact CON is exposed. Subsequently, in step E of FIG. 3, the pixel electrode 9 is patterned to be aligned with each color filter 7. This pixel electrode 9 is a contact CON
Is electrically connected to the drain D of the top gate type TFT via. Next, in step F, the black mask 8 is partially formed by a backside exposure method using the RGB color filters as a light shielding film. In this back exposure method, the RGB color filter is used as a light shielding film for ultraviolet rays, and the black mask 8 is provided on the main substrate in alignment with the gap between the RGB color filters. The thickness of the black mask 8 can be controlled by adjusting the amount of ultraviolet light, and it is possible to form a film with the same thickness as the RGB color filter. The black mask material is mainly composed of a mixture of a photocurable resin and a black colorant. No black mask is formed on the light-shielding signal line 5. Finally, in step G, in order to flatten the main substrate, all signal lines are selected and immersed in a black electrodeposition solution, and another black mask 8 is placed on the signal lines 5.
Deposit. The process G may be performed before the process F described above. When applying voltage to all signal lines,
The TFT is made non-conductive so that no voltage is applied to the pixel electrode 9.

According to the manufacturing process as described above, the number of PR processes increased for manufacturing the color filter and the black mask is only once. Therefore, it becomes possible to manufacture an on-chip color filter at a considerably low cost. Further, since the pixel electrode is formed on the on-chip color filter, there is no loss of drive voltage applied to the liquid crystal. Furthermore, by flattening the main substrate at the same time by depositing a color filter on the main substrate on which thin film transistors and the like are formed. In addition, it is needless to say that the aperture ratio is improved because it is not necessary to perform alignment with the counter substrate. At the same time, when an on-chip color filter is manufactured by this manufacturing method, a black mask will be attached to the pixel in which the TFT is destroyed (bright spot defect pixel). Therefore, the bright spot defect becomes a dark spot defect and becomes inconspicuous, so that the image quality is improved and the yield is improved.

FIG. 4 is a schematic partial sectional view showing a second embodiment of the color liquid crystal display device according to the present invention. As shown in the figure, a gate line 31 is formed on a main substrate 30 made of an insulating material such as glass or quartz. The gate line 31 is obtained by patterning a conductive thin film of molybdenum / tungsten alloy or the like into a predetermined shape. The two-layer gate insulating film 3 so as to cover the gate line 31.
2, 33 are formed. A polycrystalline silicon layer (or an amorphous silicon layer) 34 is patterned and formed thereon in a predetermined shape. A bottom gate type TFT is formed using the polycrystalline silicon layer 34 as an element region. An insulating film 35 made of silicon dioxide or the like is provided on the polycrystalline silicon layer 34 in alignment with the gate line 31. Using this insulating film 35 as an etching stopper
Patterning the + silicon film 36 into a predetermined shape,
The source and drain of the bottom gate type TFT. The signal line 37 is electrically connected to the source. Further, the base electrode 38 is formed by being electrically connected to the drain. A color filter 39 made of an electrodeposition film is formed on the base electrode 38. A black mask 40 is embedded in the area other than the color filter 39. Finally, the pixel electrode 41 is provided in alignment with the color filter 39. The pixel electrode 41 is electrically connected to the drain of the bottom gate type TFT.

On the other hand, a counter substrate 43 made of glass or the like having a counter electrode 42 formed on the entire surface is arranged facing the main substrate 30. An alignment film 44 is applied to the inner surfaces of the counter substrate 43 and the main substrate 30, respectively, and a predetermined alignment process is performed. A liquid crystal layer 45 is provided in the space between the substrates 30 and 43.
Are encapsulated to form an active matrix type color liquid crystal display device.

Next, a method of manufacturing the color liquid crystal display device according to the second embodiment shown in FIG. 4 will be described in detail with reference to FIGS. First, in step A of FIG. 5, a bottom gate type TFT and a signal line 3 are formed on a main substrate (not shown).
7. The base electrode 38 and the like are formed in an integrated manner. Subsequently, a portion other than the base electrode 38 is covered with the resist 46. The covered area includes a bottom gate type TFT and a signal line 37. Next, in step B, the signal line corresponding to the green pixel is electrically selected, the corresponding bottom gate type TFT is made conductive, and then the main substrate is immersed in the green electrodeposition liquid to obtain the green color filter. Three
9 is deposited. After that, pre-baking is performed to make the color filter 39 non-conductive. Subsequently, in step C, a red color filter is formed on a predetermined base electrode by the same electrodeposition method. Further, a blue color filter is also formed. Note that the order of green, red, and blue is not particularly limited to this. Main firing is performed after electrodeposition of all the three primary color RGB color filters. Next, in step D, the unnecessary resist is removed to remove the bottom gate type T
Expose the FT. Subsequently, in step E of FIG. 6, a pixel electrode 41 is patterned on the color filter 39 so as to match the color filter 39. The pixel electrode 41 is electrically connected to the drain of the TFT. Next, in step F, the black mask 36 is formed by a backside exposure method using the RGB color filters as a light shielding film. When the back exposure method is used, the black mask cannot be formed in the area of the light-shielding signal line 37. Finally, in step G, the signal line 37
A predetermined voltage is applied to the substrate and the substrate is immersed in a black electrodeposition liquid to deposit another black mask 36 on the signal line 37.

Next, a third embodiment of the color liquid crystal display device according to the present invention will be described with reference to FIG. As illustrated, a lower electrode 51 is patterned and formed in a predetermined shape on a main substrate 50 made of an insulating material such as glass or quartz. The lower electrode 51 is made of metal such as tantalum. An insulating film 52 is formed thereon by an anodic oxidation method. In this example, the insulating film 52 is a tantalum oxide film. A base electrode 53 is also formed adjacent to the lower electrode 51. An upper electrode 54 is formed so as to connect the base electrode 53 and the lower electrode 51. The upper electrode 54 is made of metal such as chromium. A color filter 55 made of an electrodeposition film is formed on the base electrode 53. A black mask 56 is embedded between the individual color filters 55. Finally, the pixel electrode 57 is patterned and formed in alignment with the color filter 55. This pixel electrode 57
Are electrically connected to the base electrode 53 via the contacts.

On the other hand, counter electrodes 58 (address lines) are formed on the inner surface of the counter substrate 59, which are arranged in a matrix in a manner intersecting with the lower electrodes 51 serving as signal lines. The counter substrate 59 is arranged facing the main substrate 50 with a predetermined gap. An alignment film 60 is formed on the inner surfaces of the counter substrate 59 and the main substrate 50. A liquid crystal layer 61 is enclosed in the gap between the two substrates 50 and 59 to form a color liquid crystal display device.

Next, with reference to FIGS. 8 and 9, a method of manufacturing the color liquid crystal display device according to the third embodiment shown in FIG. 7 will be described in detail. First, in step A of FIG. 8, the MIM diode and the base electrode 53 are formed on the main substrate (not shown). As described above, the MIM diode has a three-layer structure of the lower electrode 51, the insulating film 52, and the upper electrode 54. Further, a resist 62 is patterned to cover a predetermined contact region CON. Then in step B,
A signal line corresponding to a green pixel is electrically selected and immersed in a green electrodeposition solution to electrodeposit a green color filter 55 on the base electrode 53. Subsequently, in step C, the signal line corresponding to the red pixel is selected and immersed in the red electrodeposition liquid to electrodeposit the red color filter 55. Similarly, a color filter made of a blue electrodeposition film is also formed. The main firing is performed at the stage where all the color filters of the three primary colors of RGB are attached.

Next, in step D, the unnecessary resist is peeled off to expose the contact region CON. Then, in step E of FIG. 9, the pixel electrode 5 is formed on the color filter 55.
7 is patterned. The pixel electrode 57 is electrically connected to the base electrode 53 in the contact region CON. Finally, in step F, a black mask 56 is formed by a backside exposure method using the RGB color filters as a light-shielding mask.
To form.

[0026]

As described above, according to the present invention, the base electrode is formed in advance and the color filter is provided thereon by the electrodeposition method. Pixel electrodes are provided on the color filters in alignment with each other. As a result, the pixel electrode has a structure in direct contact with the liquid crystal layer, and it is possible to prevent the effective voltage applied to the liquid crystal from decreasing. Therefore, there is an effect that it is possible to prevent a decrease in contrast and an increase in power consumption. Further, the color filter formed by the electrodeposition method has excellent flatness, and has an effect of enabling flattening of the main substrate.
Since it is manufactured by the electrodeposition method, there is an effect that the number of PR steps is small and cost can be reduced. Further, since it is directly formed on the main substrate as an on-chip color filter, it has excellent dimensional accuracy and does not reduce the aperture ratio even if the pixels of the liquid crystal display device become fine. It makes a great contribution to the realization and its effect is enormous. In addition, by forming the black mask by the electrodeposition method, the bright spot defective pixel can be converted into the dark spot defective pixel, and the image quality can be significantly improved.

[Brief description of drawings]

FIG. 1 is a partial cross-sectional view showing a first embodiment of a color liquid crystal display device according to the present invention.

FIG. 2 is a manufacturing process diagram of the first embodiment.

FIG. 3 is also a manufacturing process drawing of the first embodiment.

FIG. 4 is a partial sectional view showing a second embodiment of the color liquid crystal display device according to the present invention.

FIG. 5 is a manufacturing process diagram of the second embodiment.

FIG. 6 is likewise a manufacturing process drawing of the second embodiment.

FIG. 7 is a sectional view showing a third embodiment of the color liquid crystal display device according to the present invention.

FIG. 8 is a manufacturing process diagram of the third embodiment.

FIG. 9 is likewise a manufacturing process drawing of the third embodiment.

FIG. 10 is an equivalent circuit diagram showing an example of a conventional active matrix type liquid crystal display device.

FIG. 11 is an equivalent circuit diagram showing another example of a conventional active matrix type liquid crystal display device.

FIG. 12 is a cross-sectional view showing an example of a conventional color liquid crystal display device.

FIG. 13 is a cross-sectional view showing another example of a conventional color liquid crystal display device.

FIG. 14 is a cross-sectional view showing another example of a conventional color liquid crystal display device.

FIG. 15 is a sectional view showing still another example of a conventional color liquid crystal display device.

FIG. 16 is a sectional view showing still another example of a conventional color liquid crystal display device.

[Explanation of symbols]

 0 main substrate 1 polycrystalline silicon film 2 gate insulating film 3 gate 4 interlayer insulating film 5 signal line 6 base electrode 7 color filter 8 black mask 9 pixel electrode 10 counter electrode 11 counter substrate 12 alignment film 13 liquid crystal layer

Claims (7)

[Claims] 1. A panel structure comprising a pair of main and counter substrates and a liquid crystal layer interposed therebetween, and a pixel electrode, a color filter and a switching element are formed on the main substrate, A color liquid crystal display device in which a counter electrode is formed on a substrate, wherein the color filter is an electrodeposition film deposited on a ground electrode that is electrically connected to each switching element and patterned, and the pixel electrode is Similarly, a color liquid crystal display device comprising a transparent conductive film that is electrically connected to each switching element and is patterned on the electrodeposition film. 2. The color liquid crystal display according to claim 1, wherein the color filters are divided into three primary colors and are arranged in a matrix, and a black mask is formed between the divisions with substantially the same thickness. apparatus. 3. The switching element is a top gate T
The color liquid crystal display device according to claim 1, which is an FT. 4. The bottom gate T of the switching element.
The color liquid crystal display device according to claim 1, which is an FT. 5. The color liquid crystal display device according to claim 1, wherein the switching element is an MIM. 6. A first step of integrally forming wiring and a switching element on a main substrate, a second step of patterning a base electrode electrically connected to each switching element through a contact, and excluding the base electrode. Process to cover the main substrate surface with a resist, and a fourth process to selectively electrodeposit the three primary color filters by applying current to the exposed base electrode through a switching element, and contact after removing the resist The fifth step of patterning the pixel electrode on the color filter so as to be electrically connected to the switching element via the second step, and the step of bonding the counter substrate to the main substrate with a predetermined gap and enclosing the liquid crystal in the gap. A method for manufacturing a color liquid crystal display device, which includes 6 steps. 7. The method for manufacturing a color liquid crystal display device according to claim 6, further comprising the step of forming a black mask by a backside exposure method between the color filters arranged in a matrix.