JPH10274786A - Liquid crystal display device - Google Patents

Liquid crystal display device

Info

Publication number
JPH10274786A
JPH10274786A JP7929597A JP7929597A JPH10274786A JP H10274786 A JPH10274786 A JP H10274786A JP 7929597 A JP7929597 A JP 7929597A JP 7929597 A JP7929597 A JP 7929597A JP H10274786 A JPH10274786 A JP H10274786A
Authority
JP
Japan
Prior art keywords
wiring
liquid crystal
line
display device
crystal display
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7929597A
Other languages
Japanese (ja)
Other versions
JP3323880B2 (en
Inventor
Atsushi Ban
厚志 伴
Masaya Yamakawa
真弥 山川
Masaya Okamoto
昌也 岡本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP7929597A priority Critical patent/JP3323880B2/en
Publication of JPH10274786A publication Critical patent/JPH10274786A/en
Application granted granted Critical
Publication of JP3323880B2 publication Critical patent/JP3323880B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Abstract

PROBLEM TO BE SOLVED: To improve a display quality and a good producer rate of a liquid crystal display device for which a high numerical aperture is achieved via an interlayer insulating film. SOLUTION: A split area of a picture element electrode 15 is provided on a shading pattern 16 branched from a gate wiring 2 on an insulating substrate like glass and an auxiliary wiring 3. A source wiring 8 is comprised of a transparent conductive film and is provided under the picture element electrode 15 via an interlayer insulating film. Thus, it is possible to obtain a uniform superimposed width between the source wiring and the picture element 15, and this arrangement can eliminate faulty display called block separation occurring in stepper method. Further, since it is possible to hide light leakage between picture elements 15 by the shading pattern 16, shading film does not need to be provided at the side of the counter substrate, and it is possible to improve the numerical aperture by a margin considering a misregistration at the time of sticking the counter substrate to an active matrix substrate.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、TFT(薄膜トラ
ンジスタ)などのスイッチング素子を用いた液晶表示装
置に関する。
The present invention relates to a liquid crystal display device using a switching element such as a TFT (thin film transistor).

【0002】[0002]

【従来の技術】従来より、液晶表示装置においては、マ
トリクス状に配列した画素電極を選択駆動することによ
り、画面上に表示パターンが形成される。選択された画
素電極と、これに対向する対向電極との間に電圧が印加
され、これらの電極の間に介在する液晶の光学的変調が
おこり、表示パターンとして視認される。画素電極の駆
動方式として、個々の独立した画素電極を配列し、この
画素電極のそれぞれにスイッチング素子を連結して駆動
するアクティブマトリクス駆動方式が知られている。画
素電極を選択駆動するスイッチング素子としては、TF
T(薄膜トランジスタ)素子、MIM(メタル・インシ
ュレータ・メタル)素子等が一般的に知られている。こ
のような素子の画素電極は、信号配線もしくは走査配線
と同層に形成されることが多く、画素電極を信号配線、
走査配線の内側に各配線と接触しないように配置されて
いる。
2. Description of the Related Art Conventionally, in a liquid crystal display device, a display pattern is formed on a screen by selectively driving pixel electrodes arranged in a matrix. A voltage is applied between the selected pixel electrode and a counter electrode facing the selected pixel electrode, optical modulation of the liquid crystal interposed between these electrodes occurs, and the liquid crystal is visually recognized as a display pattern. As a driving method of a pixel electrode, an active matrix driving method in which individual independent pixel electrodes are arranged and a switching element is connected to each of the pixel electrodes to drive the pixel electrodes is known. TF is used as a switching element for selectively driving a pixel electrode.
T (thin film transistor) elements, MIM (metal insulator metal) elements and the like are generally known. The pixel electrode of such an element is often formed in the same layer as the signal wiring or the scanning wiring, and the pixel electrode is connected to the signal wiring,
It is arranged inside the scanning wiring so as not to contact with each wiring.

【0003】図11は、従来のアクティブマトリクス型
液晶表示装置のアクティブマトリクス基板の部分平面図
である。図12は、図11のE−E’線断面図である。
FIG. 11 is a partial plan view of an active matrix substrate of a conventional active matrix type liquid crystal display device. FIG. 12 is a sectional view taken along line EE ′ of FIG.

【0004】図11および図12に示すように、画素電
極15の面積(開口率)を向上させるため、層間絶縁膜
12を介して画素電極15と走査配線であるゲート配線
2および信号配線であるソース配線8とを別層に形成
し、該配線と画素電極15を重畳させることも提案され
ている(特開平6−160900号公報など)。
As shown in FIGS. 11 and 12, in order to improve the area (aperture ratio) of the pixel electrode 15, the pixel electrode 15 and the gate wiring 2 serving as a scanning wiring and the signal wiring are interposed via an interlayer insulating film 12. It has also been proposed to form the source wiring 8 in a different layer and overlap the wiring with the pixel electrode 15 (Japanese Patent Laid-Open No. 6-160900).

【0005】この技術を更に詳細に説明すると、まずア
クティブマトリクス基板は、透明な基板1上に、ゲート
配線2とソース配線8が直交差するように設けられ、交
差部近傍にスイッチング素子としてTFT10が配置さ
れ接続線11を用いて、層間絶縁膜12に設けられたコ
ンタクトホール14と画素電極15が接続されている。
6は半導体層、7は陽極酸化膜、17は半導体コンタク
ト層である。
The technique will be described in more detail. First, an active matrix substrate is provided on a transparent substrate 1 so that a gate wiring 2 and a source wiring 8 are orthogonally different from each other. The contact holes 14 provided in the interlayer insulating film 12 and the pixel electrodes 15 are connected by using the arranged connection lines 11.
Reference numeral 6 denotes a semiconductor layer, 7 denotes an anodic oxide film, and 17 denotes a semiconductor contact layer.

【0006】なお、接続線11は、補助容量配線3とゲ
ート絶縁膜5を介して重なって補助容量を形成してい
る。このとき、接続線11をITOなどの透明導電膜で
形成すると開口率の向上が図れる。また、画素電極15
は層間絶縁膜12を介してゲート配線2およびソース配
線8と重畳している。この構造により、液晶表示装置の
開口率を向上させることができると共に、各配線2、8
に起因する電界をシールドしてディスクリネーションを
抑制することができると共に、各配線2、8を金属など
導電性遮光材で形成すると、画素電極15間の遮光膜と
して利用できる。
The connection line 11 overlaps with the auxiliary capacitance line 3 via the gate insulating film 5 to form an auxiliary capacitance. At this time, when the connection line 11 is formed of a transparent conductive film such as ITO, the aperture ratio can be improved. In addition, the pixel electrode 15
Overlaps with the gate wiring 2 and the source wiring 8 via the interlayer insulating film 12. With this structure, the aperture ratio of the liquid crystal display device can be improved, and each of the wirings 2 and 8 can be improved.
When the wirings 2 and 8 are formed of a conductive light-shielding material such as a metal, they can be used as a light-shielding film between the pixel electrodes 15.

【0007】このアクテイブマトリクス基板と、対向基
板との間に液晶層を挟んで、貼り合わせて液晶表示装置
となる。この液晶表示装置において、カラー表示を実現
するためには、対向基板上にカラーフィルターを形成す
る構成が最も一般的である。この対向基板のカラーフィ
ルタには、色の混じりや光漏れを防ぐためにブラックマ
トリクスを形成する構造が一般的であるが、上述したよ
うに、製造コストを下げるために各配線が遮光膜を兼
ね、カラーフィルタ基板上にブラックマトリクスを設け
ない構成にしても良い。
[0007] A liquid crystal display device is obtained by bonding a liquid crystal layer between the active matrix substrate and the opposing substrate and bonding them together. In this liquid crystal display device, in order to realize color display, a configuration in which a color filter is formed on a counter substrate is most common. The color filter of the counter substrate generally has a structure in which a black matrix is formed in order to prevent color mixing and light leakage, but as described above, in order to reduce manufacturing costs, each wiring also serves as a light shielding film. A configuration in which the black matrix is not provided on the color filter substrate may be employed.

【0008】[0008]

【発明が解決しようとする課題】一般的に、アクティブ
マトリクス基板の製造はステッパ法とよばれる基板より
小さなマスクを用いて複数回露光して画素電極15など
を形成する。そのため、マスク間でソース配線8と画素
電極15の重ね合わせ幅が若干異なったり、何層もの膜
を重ね合わせて形成しているので層間の位置ずれが生
じ、ひどい場合にはブロック別れと呼ばれるマスク毎で
の表示が異なる表示不良が起こる。
Generally, in manufacturing an active matrix substrate, a pixel electrode 15 and the like are formed by exposing a plurality of times using a smaller mask than a substrate called a stepper method. Therefore, the overlapping width of the source line 8 and the pixel electrode 15 is slightly different between the masks, or the layers are formed by superimposing a plurality of layers, resulting in misalignment between layers. In severe cases, a mask called block separation is used. A display defect in which the display is different for each display occurs.

【0009】また、TFT10と画素の補助容量電極を
電気的につなげるための接続線11は開口率を低下させ
ないためにITO膜等の透明導電膜を用いることが効果
的であるが、工程短縮のためにソース配線8と同様な透
明な膜を使用する場合、ソース配線に沿って画素電極1
5間から光抜けが生じてしまう。
It is effective to use a transparent conductive film such as an ITO film for the connection line 11 for electrically connecting the TFT 10 and the auxiliary capacitance electrode of the pixel so as not to lower the aperture ratio. Therefore, when a transparent film similar to the source wiring 8 is used, the pixel electrode 1 is formed along the source wiring.
Light leakage occurs between the five spaces.

【0010】本発明は、上記課題を解決するためになさ
れたもので、表示品位の向上と高開口率化の達成および
製造原価を低減することができる液晶表示装置を提供す
ることを目的とする。
SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and has as its object to provide a liquid crystal display device capable of improving display quality, achieving a high aperture ratio, and reducing manufacturing costs. .

【0011】[0011]

【課題を解決するための手段】本発明の液晶表示装置
は、走査配線と信号配線および該配線に接続されたスイ
ッチング素子が設けられ、前記スイッチング素子の走査
電極に前記走査配線が接続され、前記走査電極以外の一
方電極に前記信号配線、他方電極に画素電極が接続され
たアクティブマトリクス基板と、対向電極が形成された
対向基板とが液晶を挟んで対向する形で設けられ、画素
電極と前記信号配線が絶縁膜を介して重畳され、前記画
素電極は前記信号配線と平行に配置された遮光性パター
ン上で分離されていることを特徴とする。
According to the present invention, there is provided a liquid crystal display device comprising a scanning wiring, a signal wiring, and a switching element connected to the wiring, wherein the scanning wiring is connected to a scanning electrode of the switching element. An active matrix substrate in which the signal wiring is connected to one electrode other than the scanning electrode, and a pixel electrode is connected to the other electrode, and a counter substrate on which a counter electrode is formed are provided so as to face each other with a liquid crystal interposed therebetween. The signal lines are overlapped with an insulating film interposed therebetween, and the pixel electrodes are separated on a light-shielding pattern arranged in parallel with the signal lines.

【0012】この構成により、信号配線と画素電極間の
重なり幅が同一になるため、ステッパ法などで起こるブ
ロック別れと呼ばれる表示不良を無くすことができる。
また、画素電極間の光漏れを遮光性パターンで隠すこと
ができるので、対向基板側に遮光膜を設ける必要がなく
対向基板とアクティブマトリクス基板との貼り合わせ時
の位置ずれを見込んだマージン分開口率の向上と製造原
価の低減を図ることができる。
With this configuration, the overlap width between the signal wiring and the pixel electrode becomes the same, so that a display defect called block separation caused by a stepper method or the like can be eliminated.
In addition, since light leakage between the pixel electrodes can be hidden by a light-shielding pattern, there is no need to provide a light-shielding film on the counter substrate side, and an opening corresponding to a margin that allows for displacement during bonding between the counter substrate and the active matrix substrate. The rate can be improved and the manufacturing cost can be reduced.

【0013】また、前記信号配線が透明導電膜で形成さ
れても良い。この構成により、開口率の向上を図ること
ができる。
Further, the signal wiring may be formed of a transparent conductive film. With this configuration, the aperture ratio can be improved.

【0014】また、前記遮光性パターンとして導電膜を
用いて補助容量を形成しても良い。この構成により、更
なる高開口率化を図ることができる。
Further, an auxiliary capacitance may be formed using a conductive film as the light-shielding pattern. With this configuration, it is possible to further increase the aperture ratio.

【0015】また、前記信号配線と接続された予備配線
を前記信号配線と平行に配置し、1画素内に隣接する信
号配線と予備配線が配置され、各々の配線と画素電極間
にできる容量が等しくなるように形成され、前記信号配
線にライン毎に極性の反転する信号電圧が印加しても良
い。この構成により、信号配線の断線冗長性を持たすこ
とができ良品率の向上が図れる。このとき、前記駆動を
行うことにより縦方向に出るシャドーイングを軽減する
ことができ、表示品位の向上が図れる。
Further, a spare wiring connected to the signal wiring is arranged in parallel with the signal wiring, and an adjacent signal wiring and a spare wiring are arranged in one pixel, and a capacity formed between each wiring and a pixel electrode is increased. A signal voltage which is formed so as to be equal to each other and whose polarity is inverted for each line may be applied to the signal wiring. With this configuration, the disconnection redundancy of the signal wiring can be provided, and the yield rate can be improved. At this time, by performing the driving, the shadowing appearing in the vertical direction can be reduced, and the display quality can be improved.

【0016】[0016]

【発明の実施の形態】以下、本発明の実施形態を、図面
を用いながら説明する。
Embodiments of the present invention will be described below with reference to the drawings.

【0017】(実施形態1)図1は、本発明の実施形態
1の液晶表示装置におけるアクティブマトリクス基板の
一部分の構成を示す平面図で、図2は図1のA−A’線
断面図で、図3は図1のB−B’線断面図で、図4は図
1のC−C’線断面図である。
(Embodiment 1) FIG. 1 is a plan view showing a configuration of a part of an active matrix substrate in a liquid crystal display device according to Embodiment 1 of the present invention, and FIG. 2 is a sectional view taken along line AA 'of FIG. 3 is a sectional view taken along line BB 'of FIG. 1, and FIG. 4 is a sectional view taken along line CC' of FIG.

【0018】まず、アクティブマトリクス基板には、複
数の画素電極15がマトリクス状に設けられており、互
いに直交差するように、走査配線としてのゲート配線2
と信号配線としてのソース配線8が設けられ、ゲート配
線2と平行にソース配線8と直交差するように、補助容
量形成用として補助容量配線3が設けられている。補助
容量配線3は画素電極15の分離部分で上下に枝分かれ
し、遮光性パターン16になっている。TFT10は、
ゲート配線2上に画素電極15に接続されるスイッチン
グ素子として設けられ、このTFT10のドレイン電極
は、接続線4及び層間絶縁膜12に設けられたコンタク
トホール14を介して画素電極15に接続される。ま
た、本実施形態では、ゲート配線2および補助容量配線
3は金属などの遮光性導電膜で形成され、ソース配線8
および接続線4は透明導電膜で形成されている。これに
より、画素電極15間は遮光膜で遮光され、ソース配線
8部分は透明導電膜なので光が透過するので、開口率の
向上が図れる。
First, a plurality of pixel electrodes 15 are provided in a matrix on the active matrix substrate.
And a source line 8 as a signal line, and an auxiliary capacitance line 3 for forming an auxiliary capacitance is provided so as to be orthogonal to the source line 8 in parallel with the gate line 2. The auxiliary capacitance line 3 is branched up and down at a separation portion of the pixel electrode 15 to form a light-shielding pattern 16. TFT10
The switching element is provided on the gate line 2 as a switching element connected to the pixel electrode 15, and the drain electrode of the TFT 10 is connected to the pixel electrode 15 via the connection line 4 and the contact hole 14 provided in the interlayer insulating film 12. . In the present embodiment, the gate wiring 2 and the auxiliary capacitance wiring 3 are formed of a light-shielding conductive film such as a metal, and the source wiring 8 is formed.
The connection lines 4 are formed of a transparent conductive film. Accordingly, light is shielded between the pixel electrodes 15 by the light-shielding film, and light is transmitted since the source wiring 8 is a transparent conductive film, so that the aperture ratio can be improved.

【0019】本実施形態のアクティブマトリクス基板の
製造方法を説明すると、ガラス基板などの透明な基板1
上に、タンタル、アルミなどで図1のゲート電極を兼ね
るゲート配線2、補助容量配線3を形成する。このと
き、ゲート配線2、補助容量配線3および遮光性パター
ン16に、テーパ形状改善、およびゲート絶縁膜の信頼
性向上を目的に、表面を陽極酸化し、陽極酸化膜7を形
成しても良い。次に、チッ化シリコン、酸化シリコンな
どでゲート絶縁膜5、アモルファスシリコン、ポリシリ
コンなどで半導体層6、n型アモルファスシリコン、n
型微結晶シリコンなどで半導体コンタクト層17を順次
成膜してパターニングした(図2参照)。
The method of manufacturing the active matrix substrate according to the present embodiment will be described.
The gate wiring 2 serving also as the gate electrode of FIG. 1 and the auxiliary capacitance wiring 3 are formed thereon with tantalum, aluminum, or the like. At this time, for the purpose of improving the taper shape and improving the reliability of the gate insulating film, the surface of the gate wiring 2, the auxiliary capacitance wiring 3, and the light-shielding pattern 16 may be anodized to form the anodic oxide film 7. . Next, a gate insulating film 5 of silicon nitride, silicon oxide, or the like, a semiconductor layer 6 of amorphous silicon, polysilicon, or the like, n-type amorphous silicon, n
A semiconductor contact layer 17 was sequentially formed of microcrystalline silicon or the like and patterned (see FIG. 2).

【0020】次に、ITOなどの透明導電膜でソース配
線8および接続線4を、成膜して所定形状にパターニン
グする。さらに、その上に、層間絶縁膜12として感光
性のアクリル樹脂をスピン塗布法により例えば3μmの
膜厚で形成し、表面を平坦化した(図3参照)。
Next, the source line 8 and the connection line 4 are formed with a transparent conductive film such as ITO and patterned into a predetermined shape. Further, a photosensitive acrylic resin having a thickness of, for example, 3 μm was formed thereon as an interlayer insulating film 12 by a spin coating method, and the surface was flattened (see FIG. 3).

【0021】ここでは、前記感光性のアクリル樹脂とし
て、ベースポリマーは、メタクリル酸とグリシジルメタ
クリレートのポリマーで、感光剤としてナフトキシジア
ジド系ポジ型感光剤のものを使用した。次に、この樹脂
に対して、所望のパターンに従って露光し、アルカリ性
の溶液によって現像処理する。これにより露光された部
分のみがアルカリ性の溶液によってエッチングされ、層
間絶縁膜12を貫通するコンタクトホール14が形成さ
れることになる(図4参照)。
Here, as the photosensitive acrylic resin, a base polymer was a polymer of methacrylic acid and glycidyl methacrylate, and a naphthoxydiazide-based positive photosensitive agent was used as the photosensitive agent. Next, the resin is exposed according to a desired pattern and developed with an alkaline solution. As a result, only the exposed portion is etched by the alkaline solution, and a contact hole 14 penetrating through the interlayer insulating film 12 is formed (see FIG. 4).

【0022】さらに、その上に、画素電極15となるI
TOなどの透明導電膜を成膜し、ステッパ法を用いて露
光しパターニングする。これにより画素電極15は、層
間絶縁膜12を貫くコンタクトホール14を介して、T
FT10のドレイン電極と接続されている接続線4と接
続されることになる。このように、ソース配線8と画素
電極15の重なり幅が一定であるためにステッパ露光な
どの方法で形成した場合に生じやすいブロック別れを防
止することができる。これは特に、ソースライン反転、
ドット反転駆動と呼ばれる隣り合うソース配線8毎に映
像信号の極性を反転させた駆動を行ったとき効果的であ
る。また、コンタクトホールを遮光性パターン16もし
くは遮光性の各配線上に設けることにより、コンタクト
部分は平坦でないので配向不良により光り抜けが生じる
のを隠すことができ表示品位の向上が図れる。このと
き、複数の画素電極15の分割をゲート配線2および遮
光性パターン16上で行った(図1参照)。
Further, a pixel electrode 15 on which I
A transparent conductive film such as TO is formed, and is exposed and patterned using a stepper method. As a result, the pixel electrode 15 is connected to the T electrode through the contact hole 14 penetrating the interlayer insulating film 12.
This is connected to the connection line 4 connected to the drain electrode of the FT 10. As described above, since the overlapping width of the source wiring 8 and the pixel electrode 15 is constant, it is possible to prevent block separation which is likely to occur when the source wiring 8 and the pixel electrode 15 are formed by a method such as stepper exposure. This is especially true for source line inversion,
This is effective when a drive called a dot inversion drive in which the polarity of a video signal is inverted for each adjacent source line 8 is performed. Further, by providing the contact hole on the light-shielding pattern 16 or each of the light-shielding wirings, the contact portion is not flat, so that the occurrence of light leakage due to poor alignment can be hidden, and the display quality can be improved. At this time, the plurality of pixel electrodes 15 were divided on the gate wiring 2 and the light-shielding pattern 16 (see FIG. 1).

【0023】その後、図示しない対向基板として、ガラ
ス基板などの透明な基板上に、赤、緑、青3色のカラー
フィルターと対向電極を設け、アクティブマトリクス基
板の間に、液晶を封入し、シール材を用いて貼り合わせ
る。そのとき、必要に応じて配向膜や偏光板を用いる。
Thereafter, as a counter substrate (not shown), three color filters of red, green, and blue and a counter electrode are provided on a transparent substrate such as a glass substrate, and a liquid crystal is sealed between the active matrix substrates. Paste using materials. At that time, an alignment film or a polarizing plate is used as necessary.

【0024】本実施形態のアクティブマトリクス型液晶
表示装置においては、隣り合う画素電極15の分割を遮
光性パターン16上で行ったため、対向基板側に遮光膜
を設ける必要がなくなり対向基板とアクティブマトリク
ス基板との貼り合わせ時の位置ずれを見込んだマージン
分開口率の向上と製造原価の低減を図ることができる。
In the active matrix type liquid crystal display device of the present embodiment, since the adjacent pixel electrodes 15 are divided on the light-shielding pattern 16, there is no need to provide a light-shielding film on the opposite substrate side, and the opposite substrate and the active matrix substrate It is possible to improve the aperture ratio and reduce the manufacturing cost by the margin in consideration of the displacement at the time of bonding with the substrate.

【0025】また、ソース配線8がITOなどの透明導
電膜で形成されているので開口率の向上を図ることがで
きる。また、遮光性パターン16を用いて補助容量を形
成しているため補助容量配線3の幅を狭くすることがで
き、更なる高開口率化を図ることができる。
Further, since the source wiring 8 is formed of a transparent conductive film such as ITO, the aperture ratio can be improved. Further, since the auxiliary capacitance is formed by using the light-shielding pattern 16, the width of the auxiliary capacitance wiring 3 can be reduced, and the aperture ratio can be further increased.

【0026】なお、本実施形態では補助容量を補助容量
配線3をゲート配線2とは別に設けるCs on Co
m方式を用いたが、図5に示すゲート配線2から枝分か
れした遮光性パターン16を用いて補助容量を形成する
Cs on Gate構造でも同様の効果が得られる。
In the present embodiment, the auxiliary capacitance is provided by providing the auxiliary capacitance line 3 separately from the gate line 2.
Although the m-type is used, the same effect can be obtained by a Cs on Gate structure in which an auxiliary capacitance is formed using the light-shielding pattern 16 branched from the gate wiring 2 shown in FIG.

【0027】(実施形態2)図6は、本発明の実施形態
2のアクティブマトリクス型液晶表示装置におけるアク
ティブマトリクス基板の構成を示す平面図で、図7は図
6のD−D’線断面図であり、実施形態1と同じ部分の
説明は省略する。
(Embodiment 2) FIG. 6 is a plan view showing a configuration of an active matrix substrate in an active matrix type liquid crystal display device according to Embodiment 2 of the present invention, and FIG. 7 is a sectional view taken along line DD 'of FIG. Therefore, the description of the same parts as in the first embodiment will be omitted.

【0028】本実施形態では、ソース配線をソース配線
8aと8bの2本を一組として用い、ソース電極9部分
で両配線を接続して断線冗長性を持たせた。この場合で
も、ソース配線8a、8bを透明導電膜で形成すること
により、開口率が低下することはない。また、この様に
接続を画素毎にすることにより、断線冗長性をより高め
ることができる。
In this embodiment, two source wires, that is, the source wires 8a and 8b are used as one set, and both wires are connected at the source electrode 9 to provide disconnection redundancy. Even in this case, by forming the source wirings 8a and 8b with a transparent conductive film, the aperture ratio does not decrease. Further, by making the connection for each pixel in this manner, the disconnection redundancy can be further improved.

【0029】ここで図8に示すように、1画素電極下に
ある隣り合うソース配線8a、8bに入力する信号をそ
れぞれソース1、ソース2に示すようなお互いに逆極性
の信号を入力するソースライン反転駆動を用いて駆動す
ることにより、お互いの容量を打ち消し合い縦方向にで
るシャドーイングを軽減することができる。また、図9
に示すソースライン反転駆動を1水平走査期間毎に極性
反転するドット反転駆動を用いると更に効果がある。こ
のとき、ソース配線8a、8bと画素電極15間の容量
を同じにすることにより更に効果的である。
As shown in FIG. 8, signals input to adjacent source lines 8a and 8b below one pixel electrode are supplied to sources 1 and 2, respectively, for inputting signals having opposite polarities to each other. By driving using the line inversion drive, the mutual capacitance can be canceled and the shadowing that appears in the vertical direction can be reduced. FIG.
It is more effective to use the dot inversion drive in which the polarity of the source line inversion drive shown in (1) is inverted every horizontal scanning period. At this time, it is more effective to make the capacitance between the source lines 8a and 8b and the pixel electrode 15 the same.

【0030】なお、本実施形態でも補助容量を、図10
に示すゲート配線2から枝分かれした遮光性パターン1
6を用いて補助容量を形成するCs on Gate構
造でも同様の効果が得られる。
In this embodiment, the auxiliary capacitance is also used as shown in FIG.
Light-shielding pattern 1 branched from the gate wiring 2 shown in FIG.
A similar effect can be obtained also in a Cs on Gate structure in which an auxiliary capacitance is formed by using the C6.

【0031】[0031]

【発明の効果】以上、説明したように、本発明の液晶表
示装置によると、走査配線と信号配線および該配線に接
続されたスイッチング素子が設けられ、前記スイッチン
グ素子の走査電極に前記走査配線が接続され、前記走査
電極以外の一方電極に前記信号配線、他方電極に画素電
極が接続されたアクティブマトリクス基板と、対向電極
が形成された対向基板とが液晶を挟んで対向する形で設
けられ、画素電極と前記信号配線が絶縁膜を介して重畳
され、前記画素電極は前記信号配線と平行に配置された
遮光性パターン上で分離されていることにより、信号配
線と画素電極間の重なり幅が同一になるため、ステッパ
法などで起こるブロック別れと呼ばれる表示不良を無く
すことができる。また、画素電極間の光漏れを遮光性パ
ターンで隠すことができるので、対向基板側に遮光膜を
設ける必要がなく対向基板とアクティブマトリクス基板
との貼り合わせ時の位置ずれを見込んだマージン分開口
率の向上と製造原価の低減を図ることができる。
As described above, according to the liquid crystal display device of the present invention, the scanning wiring, the signal wiring, and the switching element connected to the wiring are provided, and the scanning wiring is connected to the scanning electrode of the switching element. Connected, an active matrix substrate in which the signal wiring is connected to one electrode other than the scanning electrode, and a pixel electrode is connected to the other electrode, and a counter substrate on which a counter electrode is formed are provided so as to face each other with a liquid crystal interposed therebetween. The pixel electrode and the signal wiring are overlapped via an insulating film, and the pixel electrode is separated on a light-shielding pattern arranged in parallel with the signal wiring, so that the overlap width between the signal wiring and the pixel electrode is reduced. Since they are the same, it is possible to eliminate a display defect called block separation that occurs in the stepper method or the like. In addition, since light leakage between the pixel electrodes can be hidden by a light-shielding pattern, there is no need to provide a light-shielding film on the counter substrate side, and an opening corresponding to a margin that allows for displacement during bonding between the counter substrate and the active matrix substrate. The rate can be improved and the manufacturing cost can be reduced.

【0032】また、前記信号配線が透明導電膜で形成さ
れていることにより、開口率の向上を図ることができ
る。
Further, since the signal wiring is formed of a transparent conductive film, the aperture ratio can be improved.

【0033】また、前記遮光性パターンとして導電膜を
用いて補助容量を形成されていることにより、更なる高
開口率化を図ることができる。
Further, since the auxiliary capacitance is formed by using a conductive film as the light-shielding pattern, it is possible to further increase the aperture ratio.

【0034】また、前記信号配線と接続された予備配線
を前記信号配線と平行に配置し、1画素内に隣接する信
号配線と予備配線が配置され、各々の配線と画素電極間
にできる容量が等しくなるように形成され、前記信号配
線にライン毎に極性の反転する信号電圧が印加すること
により、信号配線の断線冗長性を持たすことができ良品
率の向上が図れる。このとき、前記駆動を行うことによ
り縦方向に出るシャドーイングを軽減することができ、
表示品位の向上が図れる。
Further, a spare wiring connected to the signal wiring is arranged in parallel with the signal wiring, and an adjacent signal wiring and a spare wiring are arranged in one pixel, and a capacity formed between each wiring and the pixel electrode is increased. By applying a signal voltage whose polarity is inverted for each line to the signal lines, disconnection redundancy of the signal lines can be provided and the non-defective rate can be improved. At this time, shadowing appearing in the vertical direction can be reduced by performing the driving,
The display quality can be improved.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の実施形態1のアクティブマトリクス型
液晶表示装置のアクティブマトリクス基板の部分平面図
である。
FIG. 1 is a partial plan view of an active matrix substrate of an active matrix liquid crystal display device according to a first embodiment of the present invention.

【図2】図1のA−A’線断面図である。FIG. 2 is a sectional view taken along line A-A 'of FIG.

【図3】図1のB−B’線断面図である。FIG. 3 is a sectional view taken along line B-B 'of FIG.

【図4】図1のC−C’線断面図である。FIG. 4 is a sectional view taken along line C-C ′ of FIG. 1;

【図5】本発明の実施形態1のアクティブマトリクス型
液晶表示装置の別のアクティブマトリクス基板の部分平
面図である。
FIG. 5 is a partial plan view of another active matrix substrate of the active matrix liquid crystal display device according to the first embodiment of the present invention.

【図6】本発明の実施形態2のアクティブマトリクス型
液晶表示装置のアクティブマトリクス基板の部分平面図
である。
FIG. 6 is a partial plan view of an active matrix substrate of an active matrix liquid crystal display device according to a second embodiment of the present invention.

【図7】図6のD−D’線断面図である。FIG. 7 is a sectional view taken along line D-D ′ of FIG. 6;

【図8】本発明の実施形態2のアクティブマトリクス型
液晶表示装置の駆動信号である。
FIG. 8 shows drive signals of the active matrix liquid crystal display device according to the second embodiment of the present invention.

【図9】本発明の実施形態2のアクティブマトリクス型
液晶表示装置の別の駆動信号である。
FIG. 9 shows another drive signal of the active matrix liquid crystal display device according to the second embodiment of the present invention.

【図10】本発明の実施形態2のアクティブマトリクス
型液晶表示装置の別のアクティブマトリクス基板の部分
平面図である。
FIG. 10 is a partial plan view of another active matrix substrate of the active matrix liquid crystal display device according to the second embodiment of the present invention.

【図11】従来のアクティブマトリクス型液晶表示装置
のアクティブマトリクス基板の部分平面図である。
FIG. 11 is a partial plan view of an active matrix substrate of a conventional active matrix type liquid crystal display device.

【図12】図11のE−E’線断面図である。12 is a sectional view taken along line E-E 'of FIG.

【符号の説明】 1 基板 2 ゲート配線 3 補助容量配線 4 接続線 8 ソース配線 10 TFT(薄膜トランジスタ) 12 層間絶縁膜 14 コンタクトホール 15 画素電極 16 遮光性パターン[Description of Signs] 1 Substrate 2 Gate wiring 3 Auxiliary capacitance wiring 4 Connection line 8 Source wiring 10 TFT (thin film transistor) 12 Interlayer insulating film 14 Contact hole 15 Pixel electrode 16 Light-shielding pattern

───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 FI H01L 21/336 H01L 29/78 612Z ──────────────────────────────────────────────────続 き Continued on front page (51) Int.Cl. 6 Identification code FI H01L 21/336 H01L 29/78 612Z

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】 走査配線と信号配線および該配線に接続
されたスイッチング素子が設けられ、前記スイッチング
素子の走査電極に前記走査配線が接続され、前記走査電
極以外の一方電極に前記信号配線、他方電極に画素電極
が接続されたアクティブマトリクス基板と、対向電極が
形成された対向基板とが液晶を挟んで対向する形で設け
られた液晶表示装置において、 前記画素電極と前記信号配線が絶縁膜を介して重畳さ
れ、前記画素電極は前記信号配線と平行に配置された遮
光性パターン上で分離されていることを特徴とする液晶
表示装置。
1. A scanning line and a signal line, and a switching element connected to the line are provided, the scanning line of the switching element is connected to the scanning line, and one electrode other than the scanning electrode is connected to the signal line and the other. In a liquid crystal display device in which an active matrix substrate in which a pixel electrode is connected to an electrode and a counter substrate on which a counter electrode is formed are provided so as to face each other with a liquid crystal interposed therebetween, the pixel electrode and the signal wiring form an insulating film. A liquid crystal display device, wherein the pixel electrodes are separated from each other on a light-shielding pattern arranged in parallel with the signal wiring.
【請求項2】 前記信号配線が透明導電膜からなること
を特徴とする請求項1に記載の液晶表示装置。
2. The liquid crystal display device according to claim 1, wherein said signal wiring is made of a transparent conductive film.
【請求項3】 前記遮光性パターンとして導電膜を用い
て補助容量を形成することを特徴とする請求項1に記載
の液晶表示装置。
3. The liquid crystal display device according to claim 1, wherein an auxiliary capacitance is formed using a conductive film as the light-shielding pattern.
【請求項4】 前記信号配線と接続された予備配線を前
記信号配線と平行に配置し、1画素内に隣接する信号配
線と予備配線が配置され、各々の配線と画素電極間にで
きる容量が等しくなるように形成され、 該信号配線にライン毎に極性の反転する信号電圧が印加
されることを特徴とする請求項1に記載の液晶表示装
置。
4. A spare line connected to the signal line is arranged in parallel with the signal line, and an adjacent signal line and spare line are arranged in one pixel, and a capacity formed between each line and a pixel electrode is provided. 2. The liquid crystal display device according to claim 1, wherein a signal voltage whose polarity is inverted is applied to the signal wiring for each line.
JP7929597A 1997-03-31 1997-03-31 Liquid crystal display Expired - Fee Related JP3323880B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7929597A JP3323880B2 (en) 1997-03-31 1997-03-31 Liquid crystal display

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7929597A JP3323880B2 (en) 1997-03-31 1997-03-31 Liquid crystal display

Publications (2)

Publication Number Publication Date
JPH10274786A true JPH10274786A (en) 1998-10-13
JP3323880B2 JP3323880B2 (en) 2002-09-09

Family

ID=13685866

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Application Number Title Priority Date Filing Date
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Country Status (1)

Country Link
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US9153352B2 (en) 2001-07-27 2015-10-06 Semiconductor Energy Laboratory Co., Ltd. Metal wiring and method of manufacturing the same, and metal wiring substrate and method of manufacturing the same
US9917107B2 (en) 2001-07-27 2018-03-13 Semiconductor Energy Laboratory Co., Ltd. Metal wiring and method of manufacturing the same, and metal wiring substrate and method of manufacturing the same
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