KR100493969B1 - Active matrix liquid crystal display device and its manufacturing method, electronic device having the device, and display device - Google Patents

Abstract

In the liquid crystal display, two types of black matrices are formed separately for different purposes, that is, for the pixel region and the driving circuit regions. In particular, a black matrix for the pixel region is provided on the active matrix substrate and a black matrix for the drive circuit regions is provided on the opposite substrate.

Description

An active matrix liquid crystal display device and a manufacturing method thereof, an electronic device having the device, and a display device

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid crystal display device having semiconductor elements formed using a crystalline thin film semiconductor, and more particularly to an active matrix liquid crystal display device in which pixel TFTs and circuit TFTs are integrated on the same substrate. It is about.

In recent years, techniques for forming thin film transistors (TFTs) on low cost glass substrates have been rapidly developed. This is because the demand for active matrix liquid crystal display devices has increased.

In an active matrix liquid crystal display, pixel TFTs and pixel electrodes are provided for each of millions of pixels arranged in a matrix, and charges entering and exiting each pixel are controlled by the switching function of the pixel TFTs.

The pixel TFTs are controlled by circuit TFTs provided in the driving circuit regions formed around the pixel region. The circuit TFTs constitute analog buffer circuits, inverter circuits, and other circuits according to their combination scheme.

As described above, the active matrix liquid crystal display device is composed of an integrated circuit in which all pixel TFTs arranged in the pixel region in a matrix form and circuit TFTs provided in the driving circuit region are integrated on the same substrate.

Incidentally, it is a commonly used design that a light-blocking black matrix (BM) is provided over wiring lines and transistors, which are required for transmitting visible light in driving these liquid crystal displays to display images. Because it does not.

The black matrix not only prevents disorderly visual perception in the displayed image, which may be caused by an irregular electric field at the edge of one pixel electrode, but also photo-excitation occurring in the active layer (semiconductor layer). It is effective to prevent the electrical characteristics of the thin film transistors from deteriorating due to the excitation phenomenon. In particular, a black matrix is necessary in a liquid crystal display for a projector in which deterioration due to light-excitation is a serious problem, because the matrix receives about 1 million lx strong light.

The black matrix may be a light-blocking metal thin film, such as a titanium or chromium film, or may be made of a resin material in which black pigments are dispersed. To date, it is a common design that a black matrix is provided on an opposed substrate for ease of manufacture.

However, conventionally, due to the low degree of accuracy in joining the opposing substrate together with the device-side substrate (referred to herein as " active matrix substrate ") at the cell assembly stage, the black matrix has a large alignment margin. Unless formed with, the desired locations cannot be shielded from light. However, the formation of a black matrix with a large alignment margin is not suitable because it reduces the aperture ratio of the pixel region.

When a black matrix is provided on the opposing substrate, there is a concern that current coupling techniques that require large alignment margins will not be able to accommodate the next miniaturization of the components.

Therefore, at present, the "BM on TFT" structure in which the active matrix is provided on the active matrix substrate is the mainstream of the design. In this case, desired positions may be shielded by forming a black matrix on or below the pixel electrodes through the interlayer insulating film.

The "BM on TFT" structure, which can reduce the alignment margin in forming the black matrix, is very effective for increasing the aperture ratio of the pixel region.

Furthermore, as described in the inventors' patent application, it is possible to form auxiliary capacitors in portions in which the pixel electrodes and the black matrix with interlayer insulating film interposed therebetween are extended. In this case, the same potential as that of the counter electrode is provided to the black matrix.

Although the "BM on TFT" structure has several advantages as described above, this is effective only in the pixel region and disadvantageous in the driving circuit regions.

Circuit TFTs used in the driving circuit regions are required to operate at higher speed than the pixel TFT due to their functions. However, when the black matrix is formed on one driving circuit, there arises a problem that the operation speed is lowered by parasitic capacitance formed between the black matrix and the circuit TFTs.

When the operation speed of the circuit TFTs is lowered, the image display speed is lowered, which also causes various problems such as flicker of the display image. That is, the quality of the liquid crystal display device may be significantly impaired.

SUMMARY OF THE INVENTION An object of the present invention is to provide a technique capable of realizing a liquid crystal display device capable of performing high quality video display by solving the above-mentioned conventional problems.

According to the present invention, an active matrix substrate having a pixel region and a driving circuit region on a single substrate; An opposite substrate opposite the active matrix substrate; A liquid crystal layer interposed between the active matrix substrate and the opposing substrate; A first black matrix provided in a pixel region on the active matrix substrate; And a second black matrix provided on the opposing substrate in at least one region opposing the driving circuit region.

1A and 1B schematically show a liquid crystal display according to the present invention. 1A and 1B, reference numeral 101 denotes an active matrix substrate in which circuit TFTs are arranged in the driving circuit region 105 and pixel TFTs are arranged in the pixel region 106 in matrix form. The active matrix substrate 101 is a glass substrate or the like.

The black matrix 102 is formed in the pixel region 106 on the active matrix substrate 101 except for the image display region only. Although black matrix 102 is shown in divided form in FIG. 1A, this black matrix actually takes the form of one matrix.

The opposing substrate 103 is opposed to the active matrix substrate 101. A black matrix 104 for shielding the circuit TFTs from light is formed on the opposing substrate in the region overlapping with the driving circuit regions 105.

The active matrix substrate 101 and the opposing substrate 103 are joined together by a sealing member (not shown) with spacers interposed therebetween. Therefore, the diameter of the spacers is equal to the distance (cell spacing) between the substrates.

The encapsulation member serves to encapsulate the liquid crystal layer between the active matrix substrate 101 and the opposing substrate 103. Therefore, an injection inlet is formed in the encapsulation member before injecting the liquid crystal and is closed after injecting the liquid crystal.

The liquid crystal display device having the structures of FIGS. 1A and 1B has a "BM on TFT" structure in the pixel region 106. Therefore, this device can effectively block visible light without reducing the aperture ratio. In fact, the liquid crystal display manufactured by the inventors of the present invention has an aperture ratio of greater than 60%.

Since a black matrix 104 for the black circuit regions 106 is provided on the opposing substrate 103, the operating speed of the circuit TFTs is lowered by parasitic capacitances formed between the black matrix 104 and the circuit TFTs. It never happens.

Since the black matrix 104 is only required to shield the circuit TFTs from light, the black matrix 104 is sufficient to cover the entire drive circuit regions 105. That is, it is not necessary to form the black matrix 104 with the high accuracy as required to form the black matrix 102 in the pixel region 106. This explains why the black matrix 104 can be formed on the opposing substrate 103.

The two black matrices 102 and 104 are formed to extend partially from each other. In FIG. 1A, the end of the black matrix 102 formed in the pixel region 106 is patterned to be somewhat wider than the other portions and extends with the black matrix on the opposing substrate 103 beyond length X.

The black matrix 104 on the opposing substrate 103 shown in FIG. 1A faces the active matrix substrate 101 in the manner shown in FIG. 1B. That is, the portion of the black matrix 104 corresponding to the driving circuit region 105 completely shields the driving circuit regions 105 from light and the portion corresponding to the pixel region 106 (indicated by the broken line) is a window. (107).

The window 107 is formed smaller than the pixel area 106 by an area corresponding to the above-described length X, so that as long as the shielding area of the black matrix 104 is separated from each side of the pixel area 106 by the length X. It extends inward to have a boundary.

With this structure, by using two matrices according to the invention, the necessary parts on the entire substrate are shielded from the light without any unnecessary leakage of light through the openings.

According to another aspect of the invention, an active matrix substrate having a pixel region and a driving circuit region on a single substrate; An opposing substrate opposing the active matrix substrate; A manufacturing method for manufacturing an active matrix liquid crystal display device comprising a liquid crystal layer interposed between an active matrix substrate and an opposing substrate is provided, which method selectively forms one first black matrix in a pixel region on the active matrix substrate. Doing; And forming a second black matrix on the opposing substrate in at least the region opposite the drive circuit region.

Hereinafter, with reference to the accompanying drawings will be described in more detail the present specification.

Example 1

In this embodiment, the manufacturing process of circuit TFTs and pixel TFTs arranged on one active matrix substrate is described with reference to FIGS. 2A to 2E and the manufacturing process of the opposing substrate is described with reference to FIGS. 3A to 3C. .

Firstly, an insulating substrate, ie, a glass substrate 201 such as Corning 7059 and 1737, is prepared. A 2000-mm-thick silicon oxide film is formed on the glass substrate 201 as an undercoat film 202.

Next, a 500-mm-thick amorphous silicon film (not shown) is formed on the undercoat film 202 by plasma CVD or low pressure thermal CVD.

Thereafter, a crystalline silicon film (not shown) is formed by crystallizing the amorphous silicon film by an appropriate crystallization method. Examples of conventional methods include heat treatment at about 600 ° C. and annealing by excimer laser.

Metal elements for accelerating crystallization may be maintained adjacent to the amorphous silicon film in the crystallization step. This technique is described in unexamined Japanese Patent Publication Nos. 6-232059 and 7-3211339. This technique makes it possible to form a silicon film having excellent crystallinity by relatively low temperature and short time heat treatment.

When the crystalline silicon film is obtained by the heat treatment according to the above technique, it is effective for causing the crystalline silicon film to be processed by annealing using laser light or strong light having equivalent energy. The crystallinity of the crystalline silicon film can be greatly improved.

Next, an island-type semiconductor layer 203 for forming a final TFT (i.e., a peripheral circuit TFT) and an island-shaped semiconductor for forming an active region of the pixel TFT is formed. Patterned into layer 204.

Thereafter, a 1,200-kV-thick silicon oxide film 205 serving as a gate insulating film is formed by plasma CVD to cover the island-shaped semiconductor layers 203 and 204. Instead of the silicon oxide film 205, a silicon oxynitride film (e.g., denoted by SiO _x N _y ) or a silicon nitride film may be used.

Next, a 2,500-mm-thick aluminum film 206 containing scandium at 0.2 wt% is formed by sputtering. The addition of scandium is effective to prevent the formation of hillocks and whiskers on the aluminum film 206. The aluminum film 206 will serve as a gate electrode. Instead of the aluminum film 206, a film made of Mo, Ti, Ta, or some other metal such as Cr, or a conductive film made of polysilicon or silicaide material may be used.

Anodization is then carried out in the electrolyte with the aluminum film 206 used as the anode. The electrolyte is obtained by neutralizing (pH = 6.92) an ethylene glycol solution of tartaric acid (3%) with aqueous ammonia. Platinum is used as the cathode and the forming current and final voltage are set at 5 mA and 10 V, respectively.

The final thick oxide film (not shown) has the effect of increasing the adhesion with the photoresist applied later. The thickness of the anode oxide film is controlled by the voltage application time (see FIG. 2A).

In the state of FIG. 2A, the aluminum film 206 is patterned into a starting form of gate electrodes and gate lines (not shown) using a photoresist mask thereon. Second polarization is used to form porous anode oxide films 207 and 208. Aqueous (3%) aqueous solution is used as the electrolyte. Platinum is used as the cathode, and the forming current and final voltage are set at 2-3 mA and 8 V, respectively (see FIG. 2B).

Anodization proceeds in parallel with the glass substrate 201. The growth length of the porous anode oxide films 207 and 208 can be controlled by controlling the voltage application time.

After the photoresist is removed by a dedicated peeling liquid, a third anodization is carried out using an electrolyte obtained by neutralizing (pH = 6.92) an ethylene glycol solution of tartaric acid (3%) with aqueous ammonia. Platinum is used as the cathode and the forming current and final voltage are set to 5-6 mA and 100 V, respectively.

When the concentration is thick and strong, the final anode oxide films 209 and 210 have the effect of preventing the gate electrodes 211 and 212 from being damaged in a relatively later step such as the doping step.

Since the anode oxide films 209 and 210 are difficult to etch, it may cause a problem of long etching time in forming penetrating contact holes. In order to prevent this problem from occurring, it is desirable to make the thickness of the oxide films smaller than 1,000 mW.

In the state of FIG. 2B, impurities are introduced into the active layers 203 and 204 by ion doping indicated by arrow 21. For example, impurity P (phosphorus) may be used to form the n-channel TFT, and impurity of B (boron) may be used to form the p-channel TFT.

Although this embodiment relates only to the case of forming n-channel TFTs, it is also possible to form n-channel and p-channel TFTs on the same substrate by one known technique.

The source and drain regions 213 and 214 of the circuit TFT and the source and drain regions 215 and 216 of the pixel TFT are formed in a self-alignment manner by the ion implantation 21.

After the porous anode oxide films 207 and 208 are removed, ion implantation is performed as indicated by arrows 22 in FIG. 2C with a lower dose amount than in the previous ion implantation 21.

The low-concentration impurity regions 217 and 218 and the channel-forming region 221 of the circuit TFT and the low-concentration impurity regions 219 and 220 and the channel-forming region 222 of the pixel TFT are formed in the ion implantation 22. Is formed in a self-aligned manner.

In the state of FIG. 2C, laser light illumination and thermal annealing are performed. In this embodiment, the energy density of the laser light is set at 160-170 mJ / cm ² , and thermal annealing is performed at 300-450 ° C. for 1 hour.

This step improves the crystallinity of the active layers 203 and 204 that were damaged in the ion doping step and activates the implanted impurity ions.

Next, a 3,000-k-thick silicon nitride film (or silicon oxide film) as the first interlayer insulating film 223 is formed by plasma CVD. The interlayer insulating film 223 has a multilayer structure.

Then, contact holes are formed in the areas where electrodes / wirings are formed. The source line (or data line) 224, the gate line 225, and the drain line 226 of the circuit TFT and the source line 227 and the drain electrode 228 of the pixel TFT are made of titanium. And formed mainly of a material consisting of aluminum.

Since the gate electrode 212 of the pixel TFT is integrated with a gate line (not shown) extending out of the pixel area, no contact therebetween is required. The drain electrode 228 later serves as a conductive line for connecting the active layer to one pixel electrode.

Next, a second interlayer insulating film 229 having a thickness of 0.5-5 μm is formed by plasma CVD in the form of a single layer or in the form of a multilayer film of a silicon oxide film, a silicon nitride film, an organic resin film, or other films.

When the second interlayer insulating film 229 is made of an organic resin material such as polyimide, a thick film can be easily formed, and as a result, a flattening film function is given to the film 229. That is, the height of the steps formed on the active substrate can be minimized.

After the formation of the second interlayer insulating film 229, a black matrix in which black pigment is dispersed using a metal thin film such as a chromium film or a titanium film, or a resin film is formed at a thickness of 1,000-2,000 mm 3. It is desirable for the black matrix 230 to be widely patterned to provide a large margin at the end of the pixel region so that the black matrix 230 extends with the black matrix on the opposing substrate.

This structure ensures a margin of length X shown in FIG. 1A, thereby preventing the formation of light-leakage openings due to deflection in joining the substrates together.

The formation of the black matrix 230 on the active matrix substrate is effective because it can cover the areas that must be shielded from light while the matrix occupies the minimum area, and thus the aperture ratio is not reduced.

Next, a third interlayer insulating film 231 is formed. The pixel TFT is formed by contact holes for the drain electrode 228 etching the second and third interlayer insulating films 229 and 231, and as one pixel electrode 232, a transparent conductive film is electrically connected to the drain electrode 228. It is formed to be connected to.

When the pixel electrode 232 is formed to overlap the black matrix 230 as shown in Fig. 2E, the extension can be used as an auxiliary capacitor.

An active matrix substrate having a circuit TFT 233 and a pixel TFT 234 is thus formed as shown in Fig. 2E. In fact, for example, tens of thousands of circuit TFTs are arranged in the driving circuit regions in the form of CMOS circuits, where tens of thousands to millions of pixel TFTs are formed in the pixel region.

Next, a manufacturing process of one opposing substrate is described with reference to Figs. 3A to 3C.

First, a black matrix 302 of 1,000 to 2,000 microns thick is formed on one opposing substrate 301 as shown in FIG. 3A. The black matrix 302 is formed only in the region facing the driving circuit regions in cell assembling. As in the previous case, the black matrix 302 is formed using one metal thin film or a resin film containing black pigment.

Next, a color filter 303 is formed when it is necessary to display color images. Color filters 303 require a uniform thickness profile (ie, a flat surface) and require good heat and chemical resistance (see FIG. 3A).

The color filters 303 are formed to have a known structure. That is, red, green, and blue filters are regularly arranged on the opposing substrate 301, with one filter set opposing each pixel electrode on the active matrix substrate. The thickness of the color filters is set at 1.5-2.0 μm.

Therefore, although the color filters 303 are shown in FIG. 3A as if they are single coated, in fact they are a collection of color filter patterns of red, green, and blue.

Next, a 2.0-3.0 μm thick planarization film 304 is formed using a transparent resin material to cover the black matrix 302 and the color filter 303. The planarization film 302 also serves as a shielding film for the color filters 303 (see Fig. 3B).

Thereafter, a 1,000-μm-thick transparent conductive film is formed on the planarization film 304 as the counter electrode 305. An 800-mm-thick alignment film 306 is formed on the counter electrode 305 to complete the counter substrate shown in FIG. 3C.

Next, a cell assembly step for completing the liquid crystal display device is schematically described with reference to FIGS. 4A to 4D.

4A shows the rubbing step. After the active matrix substrate 401 and the opposing substrate 402 are completed by the processes of FIGS. 2A-2E and 3A-3C, these substrates are rubbed so that the alignment films have the desired alignment characteristics. This step determines the orientation of the liquid crystal in the vicinity of the substrates. In Fig. 4A, reference numerals 403 to 405 denote driving circuit regions, one image display region (i.e., pixel region), and rubbing directions.

After completion of the rubbing step, as shown in Fig. 4B, a sealing member is formed, and the spacers are dispersed. That is, the encapsulation member is formed by screen printing to surround the driving circuit regions 403 and the pixel region 404. The encapsulation member 406 may be formed by using a material obtained by dissolving an epoxy resin and a phenol curing agent in an ethyl cellosolve solvent. An opening (ie, liquid crystal injection inlet) 408 through which liquid crystal is injected is formed in the sealing member 406.

In addition to joining the substrates 401 and 402 together, the encapsulation member 406 encapsulates the liquid crystal injected into and around the image display area, thereby preventing it from leaking.

Thereafter, the spacers 407 are dispersed on the opposing substrate 402. The spacer 407 is a polymer, glass, or silica-shaped spherical fine particles that are ejected from the nozzle and dispersed over the entire counter substrate 402.

Forming the encapsulation member 406 on the opposing substrate 402 and dispersing the spacers 407 provides the advantage of preventing contamination of the TFT circuit as well as electrostatic breakdown. In particular, it may be desirable to distribute the spacers 407 onto the opposing substrate 402 because this step generates static electricity.

Subsequently, the active matrix substrate 401 and the opposing substrate 402 are joined together. The length X (ie, alignment margin) shown in FIG. 1A may be determined by the coupling accuracy. Since the two substrates are joined together with the spacers 407 interposed therebetween, the cell spacing is determined by the diameter of the spacers 407 (see FIG. 4C).

After completing the bonding of the active matrix substrate 401 and the opposing substrate 402, the encapsulation member 406 is injected through the opening 408 so that the liquid crystal is maintained adjacent to the pixel region. The liquid crystal may be injected by a known vacuum injection method.

Finally, the opening 408 is closed to enclose the liquid crystal, thereby completing the liquid crystal display shown in FIG. 4D. Reference numeral 409 represents one liquid crystal display device. As described above, a black matrix for the pixel region is provided on the active matrix substrate 401, and a black matrix for the driving circuit region is provided on the opposing substrate 402.

Example 2

The term 'semiconductor device' as used herein refers to general semiconductor devices that operate using semiconductors, as well as electro-optical devices (liquid crystal display devices, EL display devices, EC display devices, etc.). And applications incorporating such electro-optical devices.

Such applications will be described in this embodiment with examples. Examples of semiconductor devices using the present invention include TV cameras, electric still cameras, head-mounted display devices, vehicle navigation devices, projection devices (front and rear types), video cameras and personal computers. Which can be described briefly below with reference to FIGS. 5A-5F.

FIG. 5A shows a mobile computer consisting of a main body 2001, a camera portion 2002, an image receiving portion 2003, an operation switch 2004, and a display unit 2005. As shown in FIG. The present invention is applied to the display unit 2005.

5B shows a head-mounted display device, which is composed of a main body 2101, a display unit 2102, and a band portion 2103. The display unit 2102 is two relatively small plates.

5C shows a vehicle navigation apparatus, which is composed of a main body 2201, a display unit 2202, an operation switch 2203, and an antenna 2204. The present invention can be applied to the display unit 2202.

5D shows a cellular telephone, which is composed of a main body 2301, a voice output unit 2302, a voice input unit 2303, a display unit 2304, an operation switch 2305, and an antenna 2306. . The present invention can be applied to the display unit 2304.

5E shows a video camera, which is composed of a main body 2401, a display unit 2402, an audio input unit 2403, an operation switch 2404, a battery 2405, and an image receiving unit 2406. The present invention can be applied to the display unit 2402.

5F shows a preprojector device, which consists of a main body 2501, a light source 2502, a display unit 2503, an optical system (including beam splitters, polarizers, and the like), and a screen 2505.

In addition to the electro-optical device described in the embodiments, the present invention can be applied to a post projector and a portable information terminal facility that is easy to adjust. As such, the present invention has a very wide application range and can be applied to display media in all fields.

As described above, the liquid crystal display according to the present invention has the following advantages.

(1) In the pixel region, since the black matrix can be formed with a minimum alignment margin, the aperture ratio does not have to be sacrificed.

(2) In the pixel region, auxiliary capacitors can be formed by the black matrix and the pixel electrodes.

(3) In the drive regions, no parasitic capacitance is formed between the black matrix and the circuit TFTs, so that the operation speed of the circuit TFTs does not decrease.

While the invention has been described with reference to the preferred embodiments, it is understood that many changes can be made without departing from the spirit of the invention. For example, the liquid crystal display device may be a reflection type. Further, the thin film transistors may be of a bottom gate type, such as inverted staggered transistors.

1A and 1B show the structure of a liquid crystal display device according to the present invention;

2A to 2E illustrate a manufacturing process of thin film transistors.

3A to 3C illustrate a manufacturing process of an opposing substrate.

4A-4D schematically illustrate a cell assembly process.

5A-5F illustrate examples of applications.

※ Explanation of code about main part of drawing ※

101: active matrix substrates 102 and 104: black matrix

103: opposing substrate 105: driving circuit region

106: pixel area 107: window

Claims (27)

In an active matrix liquid crystal display device, An active matrix substrate having a pixel region and a driving circuit region; An opposing substrate facing the active matrix substrate; A liquid crystal layer interposed between the active matrix substrate and the opposing substrate; A first shielding film provided in said pixel region on said active matrix substrate; And And a second shielding film provided on said opposing substrate in at least a region opposing said drive circuit region. The method of claim 1, And the first and second shielding films extend at least partially through the liquid crystal layer to the same width. An active matrix liquid crystal display having an active matrix substrate having a pixel region and a driving circuit region on a single substrate, an opposing substrate facing the active matrix substrate, and a liquid crystal layer interposed between the active matrix substrate and the opposing substrate; In the manufacturing method for manufacturing the Selectively forming a first shielding film in said pixel region on said active matrix substrate; And Selectively forming a second shielding film on said opposing substrate in at least a region opposing said drive circuit region. The method of claim 3, wherein And the first and second shielding films extend at least partially through the same width through the liquid crystal layer. An electronic device having a liquid crystal display device, The liquid crystal display device, An active matrix substrate having a pixel region and a peripheral circuit region; A plurality of pixel electrodes formed on the pixel region of the active matrix substrate to form pixels in a matrix form; First thin film transistors formed on the pixel region for switching the pixel electrodes; A peripheral circuit including a second plurality of thin film transistors formed on the peripheral circuit region for driving the first plurality of thin film transistors; A first shielding film corresponding to the pixels and formed on the pixel area of the active matrix substrate; A counter substrate facing the active matrix substrate, comprising: a counter substrate having liquid crystal interposed therebetween and having counter electrodes corresponding to the pixel electrodes; And And a second shielding film formed on the counter substrate at least in an area facing the peripheral circuit area so as to cover the entire peripheral circuit area. An electronic device having a liquid crystal display device, The liquid crystal display device, An active matrix substrate having a pixel region and a peripheral circuit region; A plurality of pixel electrodes formed on the pixel region of the active matrix substrate to form pixels in a matrix form; First thin film transistors formed on the pixel region for switching the pixel electrodes; A peripheral circuit including a second plurality of thin film transistors formed on the peripheral circuit region for driving the first plurality of thin film transistors; A first shielding film corresponding to the pixels and formed on the pixel area of the active matrix substrate; A counter substrate opposing the active matrix substrate, the counter substrate having liquid crystal interposed therebetween and having counter electrodes corresponding to the pixel electrodes; A second shielding film formed on the counter substrate and covering the entire peripheral circuit area; And the second shielding film partially overlaps the periphery of the pixel area. The method according to claim 5 or 6, And an image sensing means constituting a camera, wherein an image obtained by the image sensing means is visible on the liquid crystal display. The method according to claim 5 or 6, And computing means operatively connected to the liquid crystal display. The method according to claim 5 or 6, The liquid crystal display device is a projector (projector). In an active matrix liquid crystal display device, An active matrix substrate having a driving circuit region and a pixel region on a single substrate; An opposing substrate facing the active matrix substrate; A liquid crystal layer interposed between the active matrix substrate and the opposing substrate; A first shielding film provided in the pixel region on the active matrix substrate; And A second shielding film provided on said opposing substrate in at least a region opposing said drive circuit region, The first and second shielding films may include a metal thin film or a resin. In a display device, An active matrix substrate having a driving circuit region and a pixel region; An opposing substrate facing the active matrix substrate; A first shielding film provided on the active matrix substrate and covering at least a portion of the pixel area; And A second shielding film provided on said opposing substrate and covering said drive circuit area on said active matrix substrate, And the first and second shielding layers at least partially overlap each other. The method of claim 11, The first and second shielding layers may be a first black matrix and a second black matrix, respectively. The method of claim 11, And a liquid crystal layer interposed between the active matrix substrate and the opposing substrate. The method of claim 11, The pixel area includes a first plurality of thin film transistors, and the driving circuit includes a second plurality of thin film transistors. In an active matrix liquid crystal display device, An active matrix substrate having a driving circuit region and a pixel region on a single substrate, the driving circuit having a gate driving circuit and a source driving circuit; An opposing substrate facing the active matrix substrate; A liquid crystal layer interposed between the active matrix substrate and the opposing substrate; A first shielding film provided in said pixel region on said active matrix substrate; And And a second shielding film provided on said opposing substrate in a region at least opposing said gate driving circuit region. In an active matrix liquid crystal display device, An active matrix substrate having a driving circuit region and a pixel region on a single substrate, the driving circuit having a gate driving circuit and a source driving circuit; An opposing substrate facing the active matrix substrate; A liquid crystal layer interposed between the active matrix substrate and the opposing substrate; A first shielding film provided in said pixel region on said active matrix substrate; And A second shielding film provided on said opposing substrate in at least an area opposite said gate driving circuit region, The first and second shielding films may include a metal thin film or a resin. In an active matrix liquid crystal display device, An active matrix substrate having a driving circuit region and a pixel region on a single substrate, the driving circuit having a gate driving circuit and a source driving circuit; An opposing substrate facing the active matrix substrate; A liquid crystal layer interposed between the active matrix substrate and the opposing substrate; A first shielding film provided in said pixel region on said active matrix substrate; And A second shielding film provided on said opposing substrate in at least an area opposite said gate driving circuit region, And the first and second shielding layers at least partially overlap each other. In an active matrix liquid crystal display device, An active matrix substrate having a driving circuit region and a pixel region on a single substrate, the driving circuit having a gate driving circuit and a source driving circuit; An opposing substrate facing the active matrix substrate; A liquid crystal layer interposed between the active matrix substrate and the opposing substrate; A first shielding film provided in said pixel region on said active matrix substrate; And And a second shielding film provided on said opposing substrate in at least said region opposing said source driving circuit region. In an active matrix liquid crystal display device, An active matrix substrate having a driving circuit region and a pixel region on a single substrate, the driving circuit having a gate driving circuit and a source driving circuit; An opposing substrate facing the active matrix substrate; A liquid crystal layer interposed between the active matrix substrate and the opposing substrate; A first shielding film provided in said pixel region on said active matrix substrate; And A second shielding film provided on said opposing substrate in at least an area opposite said source driving circuit region, The first and second shielding films may include a metal thin film or a resin. The method according to any one of claims 10, 16 or 19, The metal thin film includes an chromium thin film or a titanium thin film. In an active matrix liquid crystal display device, An active matrix substrate having a driving circuit region and a pixel region on a single substrate, the driving circuit having a gate driving circuit and a source driving circuit; An opposing substrate facing the active matrix substrate; A liquid crystal layer interposed between the active matrix substrate and the opposing substrate; A first shielding film provided in said pixel region on said active matrix substrate; And A second shielding film provided on said opposing substrate in at least a region opposing said source driving circuit region, And the first and second shielding layers at least partially overlap each other. In an active matrix liquid crystal display device, An active matrix substrate having a driving circuit region and a pixel region on a single substrate; An opposing substrate facing the active matrix substrate; A liquid crystal layer interposed between the active matrix substrate and the opposing substrate; A first shielding film provided in said pixel region on said active matrix substrate; And A second shielding film provided on said opposing substrate in at least a region opposing said drive circuit region, And the first and second shielding layers at least partially overlap each other. In an active matrix liquid crystal display device, An active matrix substrate having a driving circuit region and a pixel region on a single substrate; An opposing substrate facing the active matrix substrate; A liquid crystal layer interposed between the active matrix substrate and the opposing substrate; A first shielding film provided in said pixel region on said active matrix substrate; And A second shielding film provided on said opposing substrate in at least an area opposite said driving circuit region, And the second shielding layer overlaps the periphery of the pixel region. The method according to any one of claims 1 to 10, 15 to 19, or 21 to 23, And the first and second shielding layers are a first black matrix and a second black matrix, respectively. The method according to any one of claims 1 to 10, 15 to 19, or 21 to 23, The pixel area includes a first plurality of thin film transistors, and the driving circuit includes a second plurality of thin film transistors. The method according to any one of claims 1 to 10, 15 to 19, or 21 to 23, The active matrix liquid crystal display is selected from the group consisting of a mobile computer, a head-mount display, a vehicle navigation system, a cellular phone, a video camera, and a front projection device. An active matrix liquid crystal display device. The method of claim 11, And the active matrix liquid crystal display device is a device selected from the group consisting of a mobile computer, a head-mount display, a vehicle navigation system, a cellular phone, a video camera, and a front projection device.