KR950012122A - Active Matrix Liquid Crystal Display (LCD) and its manufacturing method - Google Patents

Active Matrix Liquid Crystal Display (LCD) and its manufacturing method Download PDF

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Publication number
KR950012122A
KR950012122A KR1019930020647A KR930020647A KR950012122A KR 950012122 A KR950012122 A KR 950012122A KR 1019930020647 A KR1019930020647 A KR 1019930020647A KR 930020647 A KR930020647 A KR 930020647A KR 950012122 A KR950012122 A KR 950012122A
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South Korea
Prior art keywords
layer
black matrix
source
drain
wiring
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KR1019930020647A
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Korean (ko)
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KR0119800B1 (en
Inventor
김진관
권순길
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김광호
삼성전자 주식회사
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Publication of KR950012122A publication Critical patent/KR950012122A/en
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/40—Arrangements for improving the aperture ratio

Abstract

본 발명은 액티브 매트릭스 액정 디스플에이(Active Matrix Liquid Crystal Display : 이하 AM LCD라 한다)에 관한 것으로 별도의 추가공정 없이 양극산화법을 이용하여 TFT기판 상의 소오스/드레인 배선과 동일층에 불랙매드릭스를 형성시키므로써, 상하판 겹쳐 맞춤 정도를 줄일 수 있게 되어 개구율을 향상시킬 수 있고 또한 시그널 배선(게이트 및 데이타)과 블랙매트릭스 간의 쇼트를 방지할 수 있어 화질향상과 수율 향상 및 원가절감을 달성할 수 있는 고신뢰성의 액티브 애트릭스 액정 디스플레이를 실현할 수 있게 된다.The present invention relates to an active matrix liquid crystal display (hereinafter referred to as an AM LCD), and forms a black matrix on the same layer as the source / drain wiring on a TFT substrate by using an anodization without any additional process. By reducing the overlapping of the upper and lower plates, the aperture ratio can be improved, and the short circuit between the signal wiring (gate and data) and the black matrix can be prevented, thereby improving image quality, yield and cost reduction. It is possible to realize a highly reliable active attrition liquid crystal display.

Description

액티브 매트릭스 액정 디스플레이(LCD) 및 그 제조방법Active Matrix Liquid Crystal Display (LCD) and its manufacturing method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1(A)도 및 제1(B)도는 종래 기술에 따른 TFT LCD 구조를 도시한 것으로, 제1(A)도는 TFT 기판과 대향된 상부기판 상에 블랙매트릭스가 형성된 상태를 도시한 단면도를, 제1(B)도는 TFT기판 하부에 블랙 매트릭스가 형성된 상대를 도시한 단면도를,1 (A) and 1 (B) show a TFT LCD structure according to the prior art. FIG. 1B is a cross-sectional view showing a counterpart having a black matrix formed below the TFT substrate.

제2(A)도 및 제2(B)도는 본 발명에 따른 TFT LCD 구조를 도시한 것으로, 제2(A)도는 평면도를, 제2(B)도는 상기 제2(A)도의 A-A'를 절단한 단면도이다.2 (A) and 2 (B) show a TFT LCD structure according to the present invention, the second (A) is a plan view, the second (B) is a view A-A of the second (A) It is a cross-sectional view.

Claims (3)

유리기판 위에 게이트 배선 및 축적용량 배선을 패터닝하는 공정과, 상기 게이트 배선 상에 게이트 절연층, 실리콘나이트라이드층, 반도체층, 비정질 실리콘층, 에치스토퍼층, 실리콘나이트라이드층을 순차적으로 적층한 후 사진 및 식각공정으로 에치-스토퍼 패턴을 형성하는 공정과, 오믹 콘택층으로 n+비정질 실리콘층을 증착한 후 사진 및 식각공정으로 액티브 패턴을 형성하는 공정과, 그후 상기 패턴 상에 양극산화 가능한 금속을 적층하고 개구부 크기 만큼 오픈시키는 공정과, 상기 패턴이 형성된 TFT기판 상에 투명전도막을 적층하고 사진 및 식각공정으로 화소전극, 소오스/드레인 배선 및 전극을 패터닝한 후 전면 양극산화를 실시하는 공정, 및 상기 화소전극, 소오스/드레인 배선 및 전극이 형성된 기판의 전면에 보호층을 형성하는 공정으로 이루어져 화소부의 가장자리에 블랙매트릭스 패턴이 형성됨을 특징으로 하는 액티브 매트릭스 액정 디스플레이 제조방법.Patterning a gate wiring and a storage capacitor wiring on a glass substrate, and sequentially laminating a gate insulating layer, a silicon nitride layer, a semiconductor layer, an amorphous silicon layer, an etch stopper layer, and a silicon nitride layer on the gate wiring. Forming an etch-stopper pattern by photolithography and etching, depositing an n + amorphous silicon layer with an ohmic contact layer, and then forming an active pattern by photolithography and etching, and then anodizing metal on the pattern Laminating and opening as much as the opening size, laminating a transparent conductive film on the TFT substrate on which the pattern is formed, and patterning the pixel electrode, source / drain wiring and electrode by photo and etching process, and then performing anodization on the front surface; And forming a protective layer on an entire surface of the substrate on which the pixel electrode, the source / drain wiring, and the electrode are formed. And a black matrix pattern is formed at an edge of the pixel portion. 유리기판 상에 형성된 게이트 금속과, 상기 게이트 금속 상의 전면에 형성된 게이트 절연층과, 상기 게이트 절연층 상의 스위칭소자 영역에 형성된 반도체층과, 상기 반도체층 상에 형성된 에치스토퍼와, 상기 에치스토퍼 패턴 상의 콘택 주변부에 n+비정질 실리콘으로 형성된 액티브층과, 상기 액티브층 상부에 형성된 소오스/드레인과, 상기 소오스 드레인과 연결되어 화소 전극상의 일측에 연장 형성된 제1블랙매트릭스와, 상기 게이트 절연층 상의 화소영역 및 데이타 배선측에 형성된 제2블랙매트릭스와, 상기 소오스/드레인의 콘택부 양 사이드 및 제2블랙 매트릭스와 데이타 배선 간의 개구부 양 사이드에 형성된 양극산화막과, 상기 소오스/드레인이 형성된 기판의 전면에 형성된 ITO투명전도막과, 상기 투명전도막이 형성된 기판의 전면에 형성된 보호층으로 이루어져 상기 소오스/드레인, 제1블랙 매트릭스, 제2블랙 매트릭스 및 데이타 배선이 통일층에 형성되는 구조를 갖는 것을 특징으로 하는 액티브 매트릭스 액정 디스플레이.A gate metal formed on a glass substrate, a gate insulating layer formed on the entire surface of the gate metal, a semiconductor layer formed in a switching element region on the gate insulating layer, an etch stopper formed on the semiconductor layer, and an etch stopper pattern An active layer formed of n + amorphous silicon at a contact periphery, a source / drain formed on the active layer, a first black matrix connected to the source drain and extending on one side of the pixel electrode, and a pixel region on the gate insulating layer And a second black matrix formed on the data wiring side, an anodization film formed on both sides of the contact portion of the source / drain and an opening between the second black matrix and the data wiring, and formed on the entire surface of the substrate on which the source / drain is formed. An ITO transparent conductive film and formed on the entire surface of the substrate on which the transparent conductive film is formed An active matrix liquid crystal display comprising a protective layer having a structure in which the source / drain, the first black matrix, the second black matrix, and the data wiring are formed in a uniform layer. 제2항에 있어서, 상기 소오스/드레인, 제1블랙 매트릭스, 제2블랙 매트릭스 및 데이타 배선은 양극산화 가능한 금속으로 이루미짐을 특징으로 하는 액티브 매트릭스 액정 디스플레이.3. The active matrix liquid crystal display according to claim 2, wherein the source / drain, the first black matrix, the second black matrix and the data line are made of an anodizable metal. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019930020647A 1993-10-06 1993-10-06 Active matrix liquid crystal display and its manufacturing method KR0119800B1 (en)

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KR0119800B1 KR0119800B1 (en) 1997-10-22

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100493969B1 (en) * 1996-04-16 2005-08-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Active matrix liquid crystal display device and its manufacturing method, electronic device having the device, and display device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100638525B1 (en) * 1999-11-15 2006-10-25 엘지.필립스 엘시디 주식회사 Method for fabricating array substrate of liquid crystal display with color filter

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100493969B1 (en) * 1996-04-16 2005-08-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Active matrix liquid crystal display device and its manufacturing method, electronic device having the device, and display device

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