KR100508025B1 - Substrate for liquid crystal display device having color filter and manufacturing method thereof - Google Patents

Substrate for liquid crystal display device having color filter and manufacturing method thereof Download PDF

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KR100508025B1
KR100508025B1 KR1019970055199A KR19970055199A KR100508025B1 KR 100508025 B1 KR100508025 B1 KR 100508025B1 KR 1019970055199 A KR1019970055199 A KR 1019970055199A KR 19970055199 A KR19970055199 A KR 19970055199A KR 100508025 B1 KR100508025 B1 KR 100508025B1
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insulating layer
contact hole
color filter
substrate
silicon layer
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KR19990033780A (en
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문규선
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삼성전자주식회사
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133514—Colour filters
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
    • G02F2201/123—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode pixel

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Liquid Crystal (AREA)

Abstract

투명한 절연 기판 위에 실리콘층, 제1 절연층, 게이트선, 게이트 전극 및 제 2 절연층이 차례로 형성되어 있다. 게이트 전극을 중심으로 양쪽의 절연층에 두 개의 접촉홀을 형성한다. 제2 절연층 위에 한 접촉홀과 일정 거리를 둔 컬러 필터를 형성하고, 다른 접촉홀을 통하여 실리콘층에 연결되도록 소스 전극을 형성한다. 컬러 필터 위에 컬러 필터와 인접한 접촉홀을 통하여 실리콘층에 연결되는 화소 전극을 형성한다.A silicon layer, a first insulating layer, a gate line, a gate electrode, and a second insulating layer are sequentially formed on the transparent insulating substrate. Two contact holes are formed in both insulating layers around the gate electrode. A color filter is formed on the second insulating layer at a distance from one contact hole, and a source electrode is formed to be connected to the silicon layer through the other contact hole. A pixel electrode connected to the silicon layer is formed on the color filter through contact holes adjacent to the color filter.

Description

컬러 필터를 가지고 있는 액정 표시 장치용 기판 및 그 제조 방법Substrate for liquid crystal display device having color filter and manufacturing method thereof

본 발명은 박막 트랜지스터 액정 표시 장치(thin film transistor liquid crystal display: 이하 'TFT-LCD' 라 한다)에 관한 것으로, 보다 상세하게 는 컬러 필터(color filter)가 투명한 절연 기판에 형성된 TFT-LCD에 관한 것이 다. BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin film transistor liquid crystal display (hereinafter referred to as TFT-LCD), and more particularly to a TFT-LCD in which a color filter is formed on a transparent insulating substrate. will be.

종래의 액정 패널은 TFT 기판과 대향 기판을 접착하여 패널을 형성하고 패널에 액정 물질을 주입하여 만든다. 또한, 백색 광원의 빛을 각각 적, 녹, 청색(RGB)으로 변환하여 주는 컬러 필터를 대향 기판에 형성하여 컬러 화상을 표시할 수도 있다. Conventional liquid crystal panels are made by bonding a TFT substrate and an opposing substrate to form a panel and injecting a liquid crystal material into the panel. In addition, a color filter for converting the light of the white light source into red, green, and blue (RGB) may be formed on the opposite substrate to display a color image.

위와 같이 컬러 필터가 대향 기판에 형성된 경우, 투명한 절연 기판과 대향 기판의 결합 정밀도를 ±수㎛이내로 정렬 결합시키지 않으면 색상 불량이 발생한다. 따라서, 이것을 방지하기 위해 고 정밀도를 갖춘 고가의 장비가 필요하다. When the color filter is formed on the counter substrate as described above, color defects may occur if the coupling precision of the transparent insulating substrate and the counter substrate is not aligned within ± several μm. Therefore, expensive equipment with high precision is required to prevent this.

본 발명은 TFT 기판과 대향 기판의 결합오차에 의해 발생하는 TFT-LCD의 색상 불량을 개선하고, 제조 공정을 단순화하고, TFT-LCD의 표시 품질 을 향상시키고 제조 비용을 절감시키는 데 있다.The present invention is to improve the color defect of TFT-LCD caused by the coupling error of the TFT substrate and the counter substrate, to simplify the manufacturing process, to improve the display quality of the TFT-LCD and to reduce the manufacturing cost.

이러한 과제를 달성하기 위하여, 본 발명에서는 TFT 기판에 컬러 필터를 형성한다. 특히 본 발명에서는 실리콘층, 절연막, 게이트 전극의 순서로 형성되어 있는 상부 게이트형 TFT를 채용하며, 이 때 화소 전극은 다른 절연막의 개재 없이 컬러 필터 위에 바로 형성된다. 컬러 필터는 화소 전극과 실리콘층이 연결되는 접촉홀과 일정 거리를 두도록 형성하는 것이 바람직한데, 이는 컬러 필터가 접촉홀에 인접하여 접촉홀과 중첩될 경우, 다시 접촉홀을 뚫어야 하는 것을 고려한 것이다.In order to achieve such a problem, in the present invention, a color filter is formed on the TFT substrate. In particular, the present invention employs an upper gate type TFT formed in the order of the silicon layer, the insulating film, and the gate electrode, wherein the pixel electrode is formed directly on the color filter without interposing the other insulating film. The color filter is preferably formed to be at a predetermined distance from the contact hole where the pixel electrode and the silicon layer are connected. This is to consider that the color filter should be drilled again when the color filter overlaps the contact hole adjacent to the contact hole.

이하 본 발명의 바람직한 실시예를 기재한다. 그러나 다음 실시예는 본 발명의 바람직한 일 실시예일 뿐 본 발명이 하기한 실시예에 한정되는 것은 아니다.Hereinafter, preferred embodiments of the present invention will be described. However, the following examples are only preferred embodiments of the present invention, and the present invention is not limited to the following examples.

본 발명의 실시예에 따른 TFT-LCD는 투명한 절연 기판에 칼라 필터가 접착되어 형성된 액정 패널에 액정 재료가 주입되어 있는 구조이며, 이 액정 패널에는 액정을 구동하는 구동 회로가 접속되어 있다. The TFT-LCD according to the embodiment of the present invention has a structure in which a liquid crystal material is injected into a liquid crystal panel formed by bonding a color filter to a transparent insulating substrate, and a driving circuit for driving a liquid crystal is connected to the liquid crystal panel.

먼저 본 발명의 실시예를 기재한다. 도 1은 본 발명의 실시예에 따른 액정 패널을 배치도를 도시하였고, 도 2는 도 1의 Ⅱ-Ⅱ´부분에 대한 단면도를 도시하였다. First, an embodiment of the present invention will be described. 1 is a layout view of a liquid crystal panel according to an exemplary embodiment of the present invention, and FIG. 2 is a cross-sectional view of the II-II 'portion of FIG. 1.

도 1 및 도 2에서와 같이 본 발명에 다른 TFT 기판에서는 제1 절연기판(10) 위에 반도체, 예를 들면 비정질 실리콘(amorphous silicon)이나 다결정 실리콘으로 만들어진 실리콘층(20)이 연결되어 있으며, 그 위에는 제1 절연층(30)이 형성되어 있다. 실리콘층(20) 위에 위치한 제1 절연층(30) 위에 알루미늄(Al), 크롬(Cr), 몰리브덴(Mo), 탄탈륨(Ta)과 같은 금속으로 만들어진 게이트선(51)과 그 분지인 게이트 전극(50)이 형성되어 있다. 제1 절연층(30) 위에는 게이트선(51) 및 게이트 전극(50)을 덮는 제2 절연층(40)이 형성되어 있다. 제1 절연층(30)과 제2 절연층(40)은 게이트 전극(50)을 중심으로 양쪽에 비정질 실리콘층(20)을 드러내는 제1 접촉홀(60) 및 제2 접촉 홀(70)을 가지고 있다. 크롬, 몰리브덴 또는 크롬-알루미늄 합금과 같은 금속으로 만들어진 데이터선(81)이 제2 절연층(40) 위에 세로로 되어 있고, 그 분지인 소스 전극(80)은 접촉홀(60)을 통해 실리콘층(20)과 연결되어 있다. 제2 절연층(40) 위에는 또한 컬러 필터(110)가 형성되어 있고, 그 위에는 제2 접촉홀(70)을 통해 실리콘층(20)과 연결되는 화소 전극(90)이 형성되어 있다. 여기에서, 컬러 필터(110)는 제2 접촉홀(70)과 일정 거리를 두고 형성되어 있다. 또한 제2 절연 기판(100)에는 공통 전극(130)만이 형성되어 있다. In the TFT substrate according to the present invention as shown in FIGS. 1 and 2, a silicon layer 20 made of a semiconductor, for example, amorphous silicon or polycrystalline silicon, is connected on the first insulating substrate 10. The first insulating layer 30 is formed thereon. A gate line 51 made of a metal such as aluminum (Al), chromium (Cr), molybdenum (Mo), and tantalum (Ta) on the first insulating layer 30 disposed on the silicon layer 20 and a gate electrode thereof. 50 is formed. The second insulating layer 40 covering the gate line 51 and the gate electrode 50 is formed on the first insulating layer 30. The first insulating layer 30 and the second insulating layer 40 form a first contact hole 60 and a second contact hole 70 exposing the amorphous silicon layer 20 on both sides of the gate electrode 50. Have. A data line 81 made of a metal such as chromium, molybdenum or chromium-aluminum alloy is vertical on the second insulating layer 40, and the source electrode 80, which is a branch thereof, is formed of a silicon layer through the contact hole 60. It is connected with (20). The color filter 110 is also formed on the second insulating layer 40, and the pixel electrode 90 connected to the silicon layer 20 through the second contact hole 70 is formed thereon. Here, the color filter 110 is formed at a predetermined distance from the second contact hole 70. In addition, only the common electrode 130 is formed on the second insulating substrate 100.

그러면, 도 1 및 도 2에서와 같은 액정 표시 장치를 제조하는 방법을 도 3a 내지 도 3e를 참고로 설명한다.Next, a method of manufacturing the liquid crystal display as shown in FIGS. 1 and 2 will be described with reference to FIGS. 3A to 3E.

먼저, 도 3a에서와 같이 투명한 절연 기판(10) 위에 비정질 실리콘이나 다결정 실리콘을 사용하여 실리콘층(20)을 형성하고, 그 위에 실리콘층(20)을 덮는 제1 절연층(30)을 형성한다.First, as shown in FIG. 3A, the silicon layer 20 is formed on the transparent insulating substrate 10 using amorphous silicon or polycrystalline silicon, and the first insulating layer 30 covering the silicon layer 20 is formed thereon. .

도 3b에서와 같이 제1 절연층(30) 위에 게이트선(51) 및 게이트 전극(50)을 형성하고, 이를 덮는 제2 절연층(40)을 형성한다.As shown in FIG. 3B, the gate line 51 and the gate electrode 50 are formed on the first insulating layer 30, and a second insulating layer 40 covering the gate line 51 and the gate electrode 50 is formed.

다음으로 도 3c에서와 같이 게이트 전극(50)을 중심으로 양쪽에 실리콘층(20)이 드러나도록 제1 절연층(30) 및 제2 절연층(40)을 식각하여 제1 접촉홀 (60) 및 제2 접촉홀(70)을 형성한다.Next, as shown in FIG. 3C, the first insulating layer 30 and the second insulating layer 40 are etched to expose the silicon layer 20 on both sides of the gate electrode 50, so as to expose the first contact hole 60. And a second contact hole 70.

다음으로 도 3d에서와 데이터선(81) 및 소스 전극(80)을 형성한다. 다음 제2 절연층(40) 위에 제2 접촉홀(40)과 일정 거리를 두고 컬러 필터(110)를 형성한다. 이 때, 컬러 필터(110)가 제2 접촉홀(70)과 중첩되거나 제2 접촉홀(70)을 막아버리면, 다시 접촉홀을 만드는 공정을 추가해야 하므로 일정 거리를 두어야 한다. Next, as illustrated in FIG. 3D, the data line 81 and the source electrode 80 are formed. Next, the color filter 110 is formed on the second insulating layer 40 at a predetermined distance from the second contact hole 40. In this case, when the color filter 110 overlaps the second contact hole 70 or blocks the second contact hole 70, a process of making the contact hole again needs to be added, so a certain distance should be provided.

마지막으로 도 3e에서와 같이 컬러 필터(110) 위에 ITO(indium-tin oxide) 등의 금속막을 사용하여 화소 전극(90)을 형성하면, 본 실시예에 따른 액 정 표시 장치용 기판이 완성된다. Finally, as shown in FIG. 3E, when the pixel electrode 90 is formed on the color filter 110 using a metal film such as indium-tin oxide (ITO), the liquid crystal display substrate according to the present exemplary embodiment is completed.

앞에서 설명한 바와 같이, 본 발명에서는 컬러 필터를 화소 전극과 동일한 기판에 형성하여 오정렬을 줄인다. 또한, 컬러 필터를 제2 접촉홀과 일정 거리를 유지하도록 형성함으로써 추가되는 접촉창 형성 공정을 없애고, 이에 따른 수율 향상을 이룬다.As described above, in the present invention, the color filter is formed on the same substrate as the pixel electrode to reduce misalignment. In addition, by forming the color filter to maintain a constant distance from the second contact hole to eliminate the additional contact window forming process, thereby achieving a yield.

도 1은 본 발명의 실시예에 따른 액정 패널을 도시한 배치 평면도이고,1 is a layout plan view showing a liquid crystal panel according to an embodiment of the present invention;

도 2는 도 1의 Ⅱ-Ⅱ´부분을 도시한 단면도이고,FIG. 2 is a cross-sectional view illustrating a II-II 'portion of FIG. 1,

도 3a 내지 도 3e는 본 발명의 실시예에 따른 컬러 필터를 가지고 있는 액정 표시 장치용 기판의 제조 방법을 나타내는 단면도이다.3A to 3E are cross-sectional views illustrating a method for manufacturing a substrate for a liquid crystal display device having a color filter according to an embodiment of the present invention.

Claims (3)

절연 기판 위에 실리콘층을 형성하는 단계, Forming a silicon layer on the insulating substrate, 상기 절연 기판 위에 상기 실리콘층을 덮는 제1 절연층을 형성하는 단계,Forming a first insulating layer covering the silicon layer on the insulating substrate, 상기 실리콘층 위에 위치하는 상기 제1 절연층 위에 게이트선 및 게이트 전극을 형성하는 단계, Forming a gate line and a gate electrode on the first insulating layer on the silicon layer; 상기 제1 절연층 위에 상기 게이트선 및 게이트 전극을 덮는 제2 절연층을 형성하는 단계, Forming a second insulating layer on the first insulating layer to cover the gate line and the gate electrode; 상기 제2 절연층 및 제1 절연층을 동시에 식각하여 상기 실리콘층을 드러내는 제1 접촉홀 및 제2 접촉홀을 형성하는 단계, Simultaneously etching the second insulating layer and the first insulating layer to form a first contact hole and a second contact hole exposing the silicon layer; 상기 제2 절연층 위에 상기 제1 접촉홀을 통해 상기 실리콘층에 접촉하는 소스 전극 및 데이터선을 형성하는 단계, Forming a source electrode and a data line contacting the silicon layer through the first contact hole on the second insulating layer; 상기 제2 접촉홀과 일정거리를 두고 상기 제2 절연층 위에 컬러 필터를 형성하는 단계, Forming a color filter on the second insulating layer at a predetermined distance from the second contact hole; 상기 컬러 필터 위에 상기 제2 접촉홀을 통하여 상기 실리콘층과 연결되는 화소 전극을 형성하는 단계를 포함하는Forming a pixel electrode on the color filter and connected to the silicon layer through the second contact hole; 액정 표시 장치용 기판의 제조 방법.The manufacturing method of the board | substrate for liquid crystal display devices. 절연 기판, Insulation board, 상기 기판 위에 형성되어 있는 실리콘층, A silicon layer formed on the substrate, 상기 실리콘층 위에 형성되어 있는 제1 절연층,A first insulating layer formed on the silicon layer, 상기 제1 절연층 위에 형성되어 있는 게이트 전극,A gate electrode formed on the first insulating layer, 상기 게이트 전극을 덮고 있는 제2 절연층, A second insulating layer covering the gate electrode, 상기 제2 절연층 위에 형성되어 있는 컬러 필터,A color filter formed on the second insulating layer, 상기 컬러 필터 위에 형성되어 있는 화소 전극, A pixel electrode formed on the color filter, 상기 화소 전극과 떨어져 상기 제2 절연층 위에 형성되어 있는 소스 전극을 포함하며,A source electrode formed on the second insulating layer away from the pixel electrode; 상기 제1 절연층 및 상기 제2 절연층은 상기 실리콘층을 드러내는 제1 접촉 홀 및 제2 접촉홀을 가지고 있고, 상기 소스 전극은 상기 제1 접촉홀을 통하여 상기 실리콘층과 연결되어 있고, 상기 화소 전극은 상기 제2 접촉홀을 통하여 상기 실리콘층과 연결되어 있는 액정 표시 장치용 기판.The first insulating layer and the second insulating layer have a first contact hole and a second contact hole exposing the silicon layer, the source electrode is connected to the silicon layer through the first contact hole, The pixel electrode is connected to the silicon layer through the second contact hole. 제2항에서,In claim 2, 상기 제2 접촉홀과 상기 컬러 필터는 일정 거리를 두고 형성되어 있는The second contact hole and the color filter are formed at a predetermined distance 액정 표시 장치용 기판.Substrate for liquid crystal display device.
KR1019970055199A 1997-10-27 1997-10-27 Substrate for liquid crystal display device having color filter and manufacturing method thereof KR100508025B1 (en)

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04253028A (en) * 1991-01-30 1992-09-08 Sharp Corp Active matrix type liquid crystal display device
JPH06301057A (en) * 1993-04-16 1994-10-28 Seiko Epson Corp Active matrix liquid crystal display device
JPH0772473A (en) * 1993-09-01 1995-03-17 Sony Corp Color liquid crystal display device
JPH08179376A (en) * 1994-12-22 1996-07-12 Sony Corp Color display device
KR19980077392A (en) * 1997-04-18 1998-11-16 김영환 Thin film transistor liquid crystal display and manufacturing method thereof

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04253028A (en) * 1991-01-30 1992-09-08 Sharp Corp Active matrix type liquid crystal display device
JPH06301057A (en) * 1993-04-16 1994-10-28 Seiko Epson Corp Active matrix liquid crystal display device
JPH0772473A (en) * 1993-09-01 1995-03-17 Sony Corp Color liquid crystal display device
JPH08179376A (en) * 1994-12-22 1996-07-12 Sony Corp Color display device
KR19980077392A (en) * 1997-04-18 1998-11-16 김영환 Thin film transistor liquid crystal display and manufacturing method thereof

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